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Simon Verghese - Publications

Affiliations: 
1993- Lincoln Laboratory Massachusetts Institute of Technology, Cambridge, MA, United States 
Area:
Optics Physics, Electricity and Magnetism Physics
Website:
https://www.ll.mit.edu/mission/electronics/aetverghese.html
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Frechette JP, Grossmann PJ, Busacker DE, Jordy GJ, Duerr EK, McIntosh KA, Oakley DC, Bailey RJ, Ruff AC, Brattain MA, Funk JE, MacDonald JG, Verghese S. Readout circuitry for continuous high-rate photon detection with arrays of InP Geiger-mode avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 8375. DOI: 10.1117/12.918131  0.462
2009 Verghese S, McIntosh KA, Liau ZL, Sataline C, Shelton JD, Donnelly JP, Funk JE, Younger RD, Mahoney LJ, Smith GM, Mahan JM, Chapman DC, Oakley DC, Brattain M. Arrays of 1287×32 InP-based Geiger-mode avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7320. DOI: 10.1117/12.821875  0.437
2009 Funk JE, Smith GM, McIntosh KA, Donnelly JP, Brattain MA, Ruff AC, Verghese S. Packaging and qualification of single photon counting avalanche photodiode focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 7320. DOI: 10.1117/12.821294  0.389
2009 Younger RD, McIntosh KA, Chludzinski JW, Oakley DC, Mahoney LJ, Funk JE, Donnelly JP, Verghese S. Crosstalk analysis of integrated Geiger-mode avalanche photodiode focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 7320. DOI: 10.1117/12.819173  0.387
2009 Smith GM, McIntosh KA, Donnelly JP, Funk JE, Mahoney LJ, Verghese S. Reliable InP-based geiger-mode avalanche photodiode arrays Proceedings of Spie - the International Society For Optical Engineering. 7320. DOI: 10.1117/12.819126  0.433
2008 Glettler JB, Hopman PI, Verghese S, Aversa JC, Candell LM, Donnelly JP, Duerr EK, Frechette JP, Funk JE, Liau ZL, McIntosh KA, Mahoney LJ, Molvar KM, Oakley DC, Ouellette EJ, et al. In P-based single-photon detector arrays with asynchronous readout integrated circuits Optical Engineering. 47. DOI: 10.1117/1.2992138  0.439
2008 Chapman DC, Vineis CJ, Oakley DC, Napoleone A, Smith GM, Duerr EK, Jensen KE, Donnelly JP, McIntosh KA, Verghese S. Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes Journal of Crystal Growth. 310: 2365-2369. DOI: 10.1016/J.Jcrysgro.2007.11.043  0.383
2007 Verghese S, Donnelly JP, Duerr EK, McIntosh KA, Chapman DC, Vineis CJ, Smith GM, Funk JE, Jensen KE, Hopman PI, Shaver DC, Aull BF, Aversa JC, Frechette JP, Glettler JB, et al. Arrays of inP-based avalanche photodiodes for photon counting Ieee Journal On Selected Topics in Quantum Electronics. 13: 870-884. DOI: 10.1109/Jstqe.2007.904464  0.465
2006 Donnelly JP, Duerr EK, McIntosh KA, Dauler EA, Oakley DC, Groves SH, Vineis CJ, Mahoney LJ, Molvar KM, Hopman PI, Jensen KE, Smith GM, Verghese S, Shaver DC. Design Considerations for 1.06- $mu$ m InGaAsP–InP Geiger-Mode Avalanche Photodiodes Ieee Journal of Quantum Electronics. 42: 797-809. DOI: 10.1109/Jqe.2006.877300  0.415
2006 Jensen KE, Hopman PI, Duerr EK, Dauler EA, Donnelly JP, Groves SH, Mahoney LJ, McIntosh KA, Molvar KM, Napoleone A, Oakley DC, Verghese S, Vineis CJ, Younger RD. Afterpulsing in Geiger-mode avalanche photodiodes for 1.06 μm wavelength Applied Physics Letters. 88. DOI: 10.1063/1.2189187  0.377
2001 Verghese S, McIntosh KA, Molnar RJ, Mahoney LJ, Aggarwal RL, Geis MW, Molvar KM, Duerr EK, Melngailis I. GaN avalanche photodiodes operating in linear-gain mode and Geiger mode Ieee Transactions On Electron Devices. 48: 502-511. DOI: 10.1109/16.906443  0.354
2001 Aggarwal RL, Melngailis I, Verghese S, Molnar RJ, Geis MW, Mahoney LJ. Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n+ diodes Solid State Communications. 117: 549-553. DOI: 10.1016/S0038-1098(00)00513-5  0.327
2000 Oswald JA, Wu B-, McIntosh KA, Mahoney LJ, Verghese S. Dual-band infrared metallodielectric photonic crystal filters Applied Physics Letters. 77: 2098-2100. DOI: 10.1063/1.1314880  0.342
2000 McIntosh KA, Molnar RJ, Mahoney LJ, Molvar KM, Efremow N, Verghese S. Ultraviolet photon counting with GaN avalanche photodiodes Applied Physics Letters. 76: 3938-3940. DOI: 10.1063/1.126827  0.453
2000 Wu B, Yang E, Kong JA, Oswald JA, McIntosh KA, Mahoney L, Verghese S. Analysis of Photonic Crystal Filters by the Finite-Difference Time-Domain Technique Microwave and Optical Technology Letters. 27: 81-87. DOI: 10.1002/1098-2760(20001020)27:2<81::Aid-Mop2>3.0.Co;2-S  0.327
1999 Verghese S, Duerr EK, McIntosh KA, Duffy SM, Calawa SD, Tong C-E, Kimberk R, Blundell R. A photomixer local oscillator for a 630-GHz heterodyne receiver Ieee Microwave and Guided Wave Letters. 9: 245-247. DOI: 10.1109/75.769535  0.391
1999 Zamdmer N, Hu Q, McIntosh KA, Verghese S, Förster A. On-chip frequency-domain submillimeter-wave transceiver Applied Physics Letters. 75: 3877-3879. DOI: 10.1063/1.125486  0.569
1999 McIntosh KA, Molnar RJ, Mahoney LJ, Lightfoot A, Geis MW, Molvar KM, Melngailis I, Aggarwal RL, Goodhue WD, Choi SS, Spears DL, Verghese S. GaN avalanche photodiodes grown by hydride vapor-phase epitaxy Applied Physics Letters. 75: 3485-3487. DOI: 10.1063/1.125363  0.388
1999 Zamdmer N, Hu Q, McIntosh KA, Verghese S. Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias Applied Physics Letters. 75: 2313-2315. DOI: 10.1063/1.125008  0.565
1999 Zamdmer N, Hu Q, Verghese S, Förster A. Mode-discriminating photoconductor and coplanar waveguide circuit for picosecond sampling Applied Physics Letters. 74: 1039-1041. DOI: 10.1063/1.123448  0.561
1998 Brown ER, Verghese S, McIntosh KA. Terahertz photomixing in low-temperature-grown GaAs Proceedings of Spie - the International Society For Optical Engineering. 3357: 132-142. DOI: 10.1117/12.317346  0.4
1998 Verghese S, McIntosh KA, Calawa S, Dinatale WF, Duerr EK, Molvar KA. Generation and detection of coherent terahertz waves using two photomixers Applied Physics Letters. 73: 3824-3826. DOI: 10.1063/1.122906  0.369
1998 Kao A, McIntosh KA, McMahon OB, Atkins R, Verghese S. Calculated and measured transmittance of metallodielectric photonic crystals incorporating flat metal elements Applied Physics Letters. 73: 145-147. DOI: 10.1063/1.121737  0.339
1998 Verghese S, Parker CD, Brown ER. Phase noise of a resonant-tunneling relaxation oscillator Applied Physics Letters. 72: 2550-2552. DOI: 10.1063/1.121414  0.365
1998 McIntosh KA, McMahon OB, Verghese S. Three-Dimensional Metallodielectric Photonic Crystals Incorporating Flat Metal Elements Microwave and Optical Technology Letters. 17: 153-156. DOI: 10.1002/(Sici)1098-2760(19980220)17:3<153::Aid-Mop1>3.0.Co;2-I  0.371
1997 Verghese S, McIntosh KA, Brown ER. Highly tunable fiber-coupled photomixers with coherent terahertz output power Ieee Transactions On Microwave Theory and Techniques. 45: 1301-1309. DOI: 10.1109/22.618428  0.415
1997 Verghese S, McIntosh KA, Brown ER. Optical and terahertz power limits in the low-temperature-grown GaAs photomixers Applied Physics Letters. 71: 2743-2745. DOI: 10.1063/1.120445  0.4
1997 Brown ER, Parker CD, Verghese S, Geis MW, Harvey JF. Resonant-tunneling transmission-line relaxation oscillator Applied Physics Letters. 70: 2787-2789. DOI: 10.1063/1.119059  0.358
1997 Verghese S, Zamdmer N, Hu Q, Förster A. Cryogenic picosecond sampling using fiber-coupled photoconductive switches Applied Physics Letters. 70: 2644-2646. DOI: 10.1063/1.119011  0.54
1997 McIntosh KA, Mahoney LJ, Molvar KM, McMahon OB, Verghese S, Rothschild M, Brown ER. Three-dimensional metallodielectric photonic crystals exhibiting resonant infrared stop bands Applied Physics Letters. 70: 2937-2939. DOI: 10.1063/1.118749  0.351
1997 McIntosh KA, Nichols KB, Verghese S, Brown ER. Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs Applied Physics Letters. 70: 354-356. DOI: 10.1063/1.118412  0.307
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