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Richard C. Hatch, Ph.D. - Publications

Affiliations: 
2010 University of Wisconsin, Madison, Madison, WI 
Area:
Condensed Matter Physics
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Ulstrup S, Bianchi M, Hatch R, Guan D, Baraldi A, Alfè D, Hornekær L, Hofmann P. Erratum: High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping [Phys. Rev. B86, 161402(R) (2012)] Physical Review B. 93. DOI: 10.1103/Physrevb.93.239901  0.311
2015 Hatch RC, Choi M, Posadas AB, Demkov AA. Comparison of acid- and non-acid-based surface preparations of Nb-doped SrTiO<inf>3</inf> (001) Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931616  0.305
2014 Seo H, Hatch RC, Ponath P, Choi M, Posadas AB, Demkov AA. Critical differences in the surface electronic structure of Ge(001) and Si(001): Ab initio theory and angle-resolved photoemission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.115318  0.408
2013 Johannsen JC, Ulstrup S, Bianchi M, Hatch R, Guan D, Mazzola F, Hornekær L, Fromm F, Raidel C, Seyller T, Hofmann P. Electron-phonon coupling in quasi-free-standing graphene. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 094001. PMID 23399941 DOI: 10.1088/0953-8984/25/9/094001  0.32
2013 Seo H, Choi M, Posadas AB, Hatch RC, Demkov AA. Combined in-situ photoemission spectroscopy and density functional theory of the Sr Zintl template for oxide heteroepitaxy on Si(001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4807716  0.375
2013 Ponath P, Posadas AB, Hatch RC, Demkov AA. Preparation of a clean Ge(001) surface using oxygen plasma cleaning Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4798390  0.325
2013 Nechaev IA, Hatch RC, Bianchi M, Guan D, Friedrich C, Aguilera I, Mi JL, Iversen BB, Blügel S, Hofmann P, Chulkov EV. Evidence for a direct band gap in the topological insulator Bi 2Se3 from theory and experiment Physical Review B. 87: 121111. DOI: 10.1103/Physrevb.87.121111  0.311
2013 Hatch RC, Fredrickson KD, Choi M, Lin C, Seo H, Posadas AB, Demkov AA. Surface electronic structure for various surface preparations of Nb-doped SrTiO3 (001) Journal of Applied Physics. 114. DOI: 10.1063/1.4821095  0.42
2013 Choi M, Posadas AB, Seo H, Hatch RC, Demkov AA. Charge transfer in Sr Zintl template on Si(001) Applied Physics Letters. 102. DOI: 10.1063/1.4788916  0.393
2012 Bianchi M, Hatch RC, Li Z, Hofmann P, Song F, Mi J, Iversen BB, El-Fattah ZM, Löptien P, Zhou L, Khajetoorians AA, Wiebe J, Wiesendanger R, Wells JW. Robust surface doping of Bi2Se3 by rubidium intercalation. Acs Nano. 6: 7009-15. PMID 22838508 DOI: 10.1021/Nn3021822  0.414
2012 Ulstrup S, Bianchi M, Hatch R, Guan D, Baraldi A, Alfè D, Hornekær L, Hofmann P. High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.161402  0.344
2012 Bianchi M, Hatch RC, Guan D, Planke T, Mi J, Iversen BB, Hofmann P. The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study Semiconductor Science and Technology. 27: 124001. DOI: 10.1088/0268-1242/27/12/124001  0.423
2011 Bianchi M, Hatch RC, Mi J, Iversen BB, Hofmann P. Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3. Physical Review Letters. 107: 086802. PMID 21929189 DOI: 10.1103/Physrevlett.107.086802  0.398
2011 Hatch RC, Bianchi M, Guan D, Bao S, Mi J, Iversen BB, Nilsson L, Hornekær L, Hofmann P. Stability of the Bi2Se3(111) topological state: Electron-phonon and electron-defect scattering Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.241303  0.381
2010 Hatch RC, Huber DL, Höchst H. Electron-phonon coupling in crystalline pentacene films. Physical Review Letters. 104: 047601. PMID 20366738 DOI: 10.1103/Physrevlett.104.047601  0.541
2010 Hatch RC, Sanchez CW, Höchst H. Charge injection barrier and interface dipole formation in pentacene/semimetal heterostructures Applied Physics Letters. 97: 93303. DOI: 10.1063/1.3486166  0.545
2010 Hatch RC, Höchst H. Evolution of interface properties of the Pentacene/Bi(0001) system Surface Science. 604: 1684-1687. DOI: 10.1016/J.Susc.2010.06.013  0.556
2009 Hatch RC, Huber DL, Höchst H. HOMO band structure and anisotropic effective hole mass in thin crystalline pentacene films Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.081411  0.556
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