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Sebastien Francoeur, Ph.D. - Publications

Affiliations: 
2004 University of Colorado, Boulder, Boulder, CO, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Wang J, Rousseau A, Yang M, Low T, Francoeur S, Kéna-Cohen S. Mid-infrared polarized emission from black phosphorus light-emitting diodes. Nano Letters. PMID 32286837 DOI: 10.1021/Acs.Nanolett.0C00581  0.329
2019 Wang J, Rousseau A, Eizner E, Phaneuf-L’Heureux A, Schue L, Francoeur S, Kéna-Cohen S. Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors Acs Photonics. 6: 3092-3099. DOI: 10.1021/Acsphotonics.9B00951  0.311
2018 Favron A, Goudreault FA, Gosselin V, Groulx J, Côté M, Leonelli R, Germain JF, Phaneuf-L'Heureux AL, Francoeur S, Martel R. Second-Order Raman Scattering in Exfoliated Black Phosphorus. Nano Letters. PMID 29320856 DOI: 10.1021/Acs.Nanolett.7B04486  0.31
2017 Bergeron A, Ibrahim J, Leonelli R, Francoeur S. Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy Applied Physics Letters. 110: 241901. DOI: 10.1063/1.4986189  0.342
2016 St-Jean P, Éthier-Majcher G, André R, Francoeur S. High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe. Physical Review Letters. 117: 167401. PMID 27792390 DOI: 10.1103/Physrevlett.117.167401  0.313
2015 Favron A, Gaufrès E, Fossard F, Phaneuf-L'Heureux AL, Tang NY, Lévesque PL, Loiseau A, Leonelli R, Francoeur S, Martel R. Photooxidation and quantum confinement effects in exfoliated black phosphorus. Nature Materials. 14: 826-32. PMID 26006004 DOI: 10.1038/Nmat4299  0.342
2015 Mukherjee S, Givan U, Senz S, Bergeron A, Francoeur S, de la Mata M, Arbiol J, Sekiguchi T, Itoh KM, Isheim D, Seidman DN, Moutanabbir O. Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters. 15: 3885-93. PMID 25993500 DOI: 10.1021/Acs.Nanolett.5B00708  0.302
2015 St-Jean P, Éthier-Majcher G, Francoeur S. Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs Physical Review B. 91. DOI: 10.1103/Physrevb.91.115201  0.317
2014 St-Jean P, Éthier-Majcher G, Sakuma Y, Francoeur S. Recombination dynamics of excitons bound to nitrogen isoelectronic centers in δ-doped GaP Physical Review B. 89: 75308. DOI: 10.1103/Physrevb.89.075308  0.346
2011 Ouellet-Plamondon C, Marcet S, Klem JF, Francoeur S. Excitonic fine structure of out-of-plane nitrogen dyads in GaAs Journal of Luminescence. 131: 2339-2341. DOI: 10.1016/J.Jlumin.2011.05.045  0.384
2010 Marcet S, André R, Francoeur S. Excitons bound to Te isoelectronic dyads in ZnSe Physical Review B. 82: 235309. DOI: 10.1103/Physrevb.82.235309  0.382
2010 Francoeur S, Marcet S. Effects of symmetry-breaking perturbations on excitonic states bound to systems of reduced symmetry Journal of Applied Physics. 108: 43710. DOI: 10.1063/1.3457851  0.357
2010 St-Jean P, Seryogin GA, Francoeur S. Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP 2 Applied Physics Letters. 96. DOI: 10.1063/1.3442917  0.392
2010 Monette G, Lacroix C, Lambert-Milot S, Boucher V, Ménard D, Francoeur S. Giant magneto-optical Faraday effect in GaP epilayers containing MnP magnetic nanoclusters Journal of Applied Physics. 107. DOI: 10.1063/1.3367982  0.345
2009 Marcet S, Ouellet-Plamondon C, Klem JF, Francoeur S. Single nitrogen dyad magnetoluminescence in GaAs Physical Review B. 80: 245404. DOI: 10.1103/Physrevb.80.245404  0.344
2008 Francoeur S, Tixier S, Young E, Tiedje T, Mascarenhas A. Bi isoelectronic impurities in GaAs Physical Review B. 77: 85209. DOI: 10.1103/Physrevb.77.085209  0.575
2006 Fluegel B, Francoeur S, Mascarenhas A, Tixier S, Young EC, Tiedje T. Giant spin-orbit bowing in GaAs1-xBix. Physical Review Letters. 97: 067205. PMID 17026200 DOI: 10.1103/PhysRevLett.97.067205  0.487
2005 Tixier S, Webster SE, Young EC, Tiedje T, Francoeur S, Mascarenhas A, Wei P, Schiettekatte F. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x Applied Physics Letters. 86: 112113. DOI: 10.1063/1.1886254  0.58
2005 Seong M, Francoeur S, Yoon S, Mascarenhas A, Tixier S, Adamcyk M, Tiedje T. Bi-induced vibrational modes in GaAsBi Superlattices and Microstructures. 37: 394-400. DOI: 10.1016/J.Spmi.2005.02.004  0.497
2004 Francoeur S, Klem JF, Mascarenhas A. Optical spectroscopy of single impurity centers in semiconductors. Physical Review Letters. 93: 067403. PMID 15323662 DOI: 10.1103/PhysRevLett.93.067403  0.509
2004 Wei P, Tixier S, Chicoine M, Francoeur S, Mascarenhas A, Tiedje T, Schiettekatte F. Ion beam characterization of GaAs1−x−yNxBiy epitaxial layers Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 219: 671-675. DOI: 10.1016/J.Nimb.2004.01.140  0.565
2003 Francoeur S, Seong MJ, Hanna MC, Geisz JF, Mascarenhas A, Xin HP, Tu CW. Origin of the nitrogen-induced optical transitions inGaAs1−xNx Physical Review B. 68. DOI: 10.1103/Physrevb.68.075207  0.599
2003 Francoeur S, Seong M, Mascarenhas A, Tixier S, Adamcyk M, Tiedje T. Band gap of GaAs1−xBix, 0Applied Physics Letters. 82: 3874-3876. DOI: 10.1063/1.1581983  0.611
2003 Tixier S, Adamcyk M, Tiedje T, Francoeur S, Mascarenhas A, Wei P, Schiettekatte F. Molecular beam epitaxy growth of GaAs1−xBix Applied Physics Letters. 82: 2245-2247. DOI: 10.1063/1.1565499  0.567
2002 Francoeur S, Norman AG, Mascarenhas A, Jones ED, Reno JL, Lee SR, Follstaedt DM. Two-dimensional array of self-assembled AlInAs quantum wires Applied Physics Letters. 81: 529-531. DOI: 10.1063/1.1493222  0.564
2002 Shin B, Lin A, Lappo K, Goldman RS, Hanna MC, Francoeur S, Norman AG, Mascarenhas A. Initiation and evolution of phase separation in heteroepitaxial InAlAs films Applied Physics Letters. 80: 3292-3294. DOI: 10.1063/1.1476386  0.531
2002 Francoeur S, Hanna MC, Norman AG, Mascarenhas A. Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells Applied Physics Letters. 80: 243-245. DOI: 10.1063/1.1432754  0.619
2002 Francoeur S, Norman A, Hanna M, Mascarenhas A, Reno J, Follstaedt D, Lee S. Optical properties of self-assembled lateral superlattices in AlInAs epitaxial layers and AlAs/InAs short-period superlattices Materials Science and Engineering: B. 88: 118-124. DOI: 10.1016/S0921-5107(01)00862-5  0.623
2001 Nikishin SA, Francoeur S, Temkin H. In situ pyrometric interferometry for molecular beam epitaxy of AlxGa1-xN on Si (111) Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G6.57  0.355
2001 Zhang Y, Francoeur S, Mascarenhas A, Xin H, Tu C. Electronic Structure of Heavily and Randomly Nitrogen Doped GaAs near the Fundamental Band Gap Physica Status Solidi (B). 228: 287-291. DOI: 10.1002/1521-3951(200111)228:1<287::Aid-Pssb287>3.0.Co;2-3  0.56
2000 Nikishin SA, Faleev NN, Antipov VG, Francoeur S, De Peralta LG, Seryogin GA, Holtz M, Prokofyeva TI, Chu SNG, Zubrilov AS, Elyukhin VA, Nikitina IP, Nikolaev A, Melnik Y, Dmitriev V, et al. High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/S1092578300004658  0.366
2000 Forrest RL, Meserole ED, Nielsen RT, Goorsky MS, Zhang Y, Mascarenhas A, Hanna M, Francoeur S. Single and double variant cupt-b ordered GalnAs Materials Research Society Symposium - Proceedings. 583: 249-254. DOI: 10.1557/Proc-583-249  0.557
2000 Francoeur S, Zhang Y, Norman AG, Alsina F, Mascarenhas A, Reno JL, Jones ED, Lee SR, Follstaedt DM. Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices Applied Physics Letters. 77: 1765. DOI: 10.1063/1.1311598  0.593
2000 Francoeur S, Seryogin GA, Nikishin SA, Temkin H. Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 Applied Physics Letters. 76: 2017-2019. DOI: 10.1063/1.126240  0.333
1999 Nikishin SA, Faleev NN, Antipov VG, Francoeur S, Grave De Peralta L, Seryogin GA, Temkin H, Prokofyeva TI, Holtz M, Chu SNG. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Applied Physics Letters. 75: 2073-2075. DOI: 10.1063/1.124920  0.355
1999 Francoeur S, Nikishin SA, Jin C, Qiu Y, Temkin H. Excitons bound to nitrogen clusters in GaAsN Applied Physics Letters. 75: 1538-1540. DOI: 10.1063/1.124748  0.391
1999 Francoeur S, Seryogin GA, Nikishin SA, Temkin H. X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs Applied Physics Letters. 74: 3678-3680. DOI: 10.1063/1.123219  0.366
1998 Qiu Y, Jin C, Francoeur S, Nikishin SA, Temkin H. Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine Applied Physics Letters. 72: 1999-2001. DOI: 10.1063/1.121245  0.395
1998 Francoeur S, Sivaraman G, Qiu Y, Nikishin S, Temkin H. Luminescence of as-grown and thermally annealed GaAsN/GaAs Applied Physics Letters. 72: 1857-1859. DOI: 10.1063/1.121206  0.418
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