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David Hutchinson - Publications

Affiliations: 
Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute, Troy, NY, United States 
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Hutchinson D, Mathews J, Sullivan JT, Akey A, Aziz MJ, Buonassisi T, Persans P, Warrender JM. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur Aip Advances. 6. DOI: 10.1063/1.4948986  0.56
2014 Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nature Communications. 5: 3011. PMID 24385050 DOI: 10.1038/Ncomms4011  0.528
2012 Persans PD, Berry NE, Recht D, Hutchinson D, Said AJ, Warrender JM, Peterson H, DiFranzo A, McGahan C, Clark J, Cunningham W, Aziz MJ. Photocarrier excitation and transport in hyperdoped planar silicon devices Materials Research Society Symposium Proceedings. 1321: 291-296. DOI: 10.1557/Opl.2011.1150  0.555
2012 Recht D, Hutchinson D, Cruson T, DiFranzo A, McAllister A, Said AJ, Warrender JM, Persans PD, Aziz MJ. Contactless microwave measurements of photoconductivity in silicon hyperdoped with chalcogens Applied Physics Express. 5. DOI: 10.1143/Apex.5.041301  0.554
2012 Persans PD, Berry NE, Recht D, Hutchinson D, Peterson H, Clark J, Charnvanichborikarn S, Williams JS, Difranzo A, Aziz MJ, Warrender JM. Photocarrier lifetime and transport in silicon supersaturated with sulfur Applied Physics Letters. 101. DOI: 10.1063/1.4746752  0.461
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