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Sara Fathipour - Publications

Affiliations: 
2017 Electrical Engineering University of Notre Dame, Notre Dame, IN, United States 
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17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Fathipour S, Paletti P, Fullerton-Shirey SK, Seabaugh AC. Electric-double-layer p-i-n junctions in WSe. Scientific Reports. 10: 12890. PMID 32732940 DOI: 10.1038/S41598-020-69523-9  0.707
2020 Liu M, Wei S, Shahi S, Jaiswal HN, Paletti P, Fathipour S, Remškar M, Jiao J, Hwang W, Yao F, Li H. Enhanced carrier transport by transition metal doping in WS field effect transistors. Nanoscale. PMID 32329484 DOI: 10.1039/D0Nr01573C  0.712
2020 Paletti P, Fathipour S, Remškar M, Seabaugh A. Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation Journal of Applied Physics. 127: 65705. DOI: 10.1063/1.5127769  0.701
2018 Kazanov DR, Poshakinskiy AV, Davydov VY, Smirnov AN, Eliseyev IA, Kirilenko DA, Remškar M, Fathipour S, Mintairov A, Seabaugh A, Gil B, Shubina TV. Multiwall MoS2 tubes as optical resonators Applied Physics Letters. 113: 101106. DOI: 10.1063/1.5047792  0.516
2017 Alessandri C, Fathipour S, Li H, Kwak I, Kummel A, Remskar M, Seabaugh AC. Reconfigurable Electric Double Layer Doping in an MoS2Nanoribbon Transistor Ieee Transactions On Electron Devices. 64: 5217-5222. DOI: 10.1109/Ted.2017.2767501  0.761
2016 Müller MR, Salazar R, Fathipour S, Xu H, Kallis K, Künzelmann U, Seabaugh A, Appenzeller J, Knoch J. Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure. Nanoscale Research Letters. 11: 512. PMID 27878575 DOI: 10.1186/S11671-016-1728-7  0.653
2016 Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine. Acs Nano. PMID 27305595 DOI: 10.1021/Acsnano.6B02648  0.596
2016 Seabaugh A, Fathipour S, Li W, Lu H, Park JH, Kummel AC, Jena D, Fullerton-Shirey SK, Fay P. Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels Technical Digest - International Electron Devices Meeting, Iedm. 2016: 35.6.1-35.6.4. DOI: 10.1109/IEDM.2015.7409835  0.643
2016 Fathipour S, Pandey P, Fullerton-Shirey S, Seabaugh A. Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate Journal of Applied Physics. 120: 234902. DOI: 10.1063/1.4971958  0.705
2015 Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters. PMID 26226296 DOI: 10.1021/Acs.Nanolett.5B01792  0.462
2015 Xu H, Fathipour S, Kinder EW, Seabaugh AC, Fullerton-Shirey SK. Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte. Acs Nano. 9: 4900-10. PMID 25877681 DOI: 10.1021/Nn506521P  0.715
2015 Fathipour S, Park JH, Kummel A, Seabaugh A. Low-leakage WSe2 FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al2O3 Device Research Conference - Conference Digest, Drc. 2015: 213-214. DOI: 10.1109/DRC.2015.7175641  0.633
2015 Fathipour S, Remskar M, Varlec A, Ajoy A, Yan R, Vishwanath S, Rouvimov S, Hwang WS, Xing HG, Jena D, Seabaugh A. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906066  0.684
2014 Fathipour S, Xu H, Kinder E, Fullerton-Shirey S, Seabaugh A. Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe 2 field-effect transistor Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2014.6872329  0.65
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.683
2013 Fathipour S, Hwang WS, Kosel T, Xing HG, Haensch W, Jena D, Seabaugh A. Exfoliated MoTe2 field-effect transistor Device Research Conference - Conference Digest, Drc. 115-116. DOI: 10.1109/DRC.2013.6633820  0.535
2012 Fathipour V, Fathipour S, Fathipour M, Malakootian MA. Device simulation of a novel strained silicon channel RF LDMOS Microelectronic Engineering. 94: 29-32. DOI: 10.1016/J.Mee.2011.12.014  0.426
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