| Year |
Citation |
Score |
| 2017 |
Haugan HJ, Olson BV, Brown GJ, Kadlec EA, Kim JK, Shaner EA. Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices Optical Engineering. 56: 91604-91604. DOI: 10.1117/1.Oe.56.9.091604 |
0.496 |
|
| 2016 |
Haugan HJ, Olson BV, Brown GJ, Kadlec EA, Kim JK, Shaner EA. Study of minority carrier lifetimes in very long-wave infrared strained-layer InAs/GaInSb superlattices Proceedings of Spie. 9974: 997403. DOI: 10.1117/12.2236535 |
0.467 |
|
| 2016 |
Haugan HJ, Brown GJ, Olson BV, Kadlec EA, Kim JK, Shaner EA. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4941132 |
0.516 |
|
| 2016 |
Aytac Y, Olson BV, Kim JK, Shaner EA, Hawkins SD, Klem JF, Flatté ME, Boggess TF. Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices Physical Review Applied. 5: 54016. DOI: 10.1103/Physrevapplied.5.054016 |
0.342 |
|
| 2016 |
Kadlec EA, Olson BV, Goldflam MD, Kim JK, Klem JF, Hawkins SD, Coon WT, Cavaliere MA, Tauke-Pedretti A, Fortune TR, Harris CT, Shaner EA. Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices Applied Physics Letters. 109: 261105. DOI: 10.1063/1.4973352 |
0.458 |
|
| 2016 |
Olson BV, Kadlec EA, Kim JK, Klem JF, Hawkins SD, Tauke-Pedretti A, Coon WT, Fortune TR, Shaner EA. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices Applied Physics Letters. 109: 022105. DOI: 10.1063/1.4956351 |
0.415 |
|
| 2016 |
Olson BV, Kim JK, Kadlec EA, Klem JF, Hawkins SD, Coon WT, Fortune TR, Tauke-Pedretti A, Cavaliere MA, Shaner EA. Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers Applied Physics Letters. 108: 252104. DOI: 10.1063/1.4954649 |
0.473 |
|
| 2016 |
Aytac Y, Olson BV, Kim JK, Shaner EA, Hawkins SD, Klem JF, Olesberg J, Flatté ME, Boggess TF. Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices Journal of Applied Physics. 119: 215705. DOI: 10.1063/1.4953386 |
0.468 |
|
| 2016 |
Dyer GC, Shi X, Olson BV, Hawkins SD, Klem JF, Shaner EA, Pan W. Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure Applied Physics Letters. 108. DOI: 10.1063/1.4939234 |
0.35 |
|
| 2015 |
Aytac Y, Olson BV, Kim JK, Shaner EA, Hawkins SD, Klem JF, Flatté ME, Boggess TF. Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2077753 |
0.494 |
|
| 2015 |
Olson BV, Kadlec EA, Kim JK, Klem JF, Hawkins SD, Shaner EA, Flatté ME. Intensity- and Temperature-Dependent Carrier Recombination in InAs/InAs1-x S bx Type-II Superlattices Physical Review Applied. 3. DOI: 10.1103/Physrevapplied.3.044010 |
0.45 |
|
| 2015 |
Olson BV, Grein CH, Kim JK, Kadlec EA, Klem JF, Hawkins SD, Shaner EA. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices Applied Physics Letters. 107. DOI: 10.1063/1.4939147 |
0.464 |
|
| 2015 |
Olson BV, Kim JK, Kadlec EA, Klem JF, Hawkins SD, Leonhardt D, Coon WT, Fortune TR, Cavaliere MA, Tauke-Pedretti A, Shaner EA. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors Applied Physics Letters. 107. DOI: 10.1063/1.4935159 |
0.443 |
|
| 2015 |
Haugan HJ, Brown GJ, Olson BV, Kadlec EA, Kim JK, Shaner EA. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices Applied Physics Letters. 107. DOI: 10.1063/1.4932056 |
0.458 |
|
| 2015 |
Aytac Y, Olson BV, Kim JK, Shaner EA, Hawkins SD, Klem JF, Flatté ME, Boggess TF. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices Journal of Applied Physics. 118: 125701. DOI: 10.1063/1.4931419 |
0.518 |
|
| 2015 |
Zuo D, Liu R, Wasserman D, Mabon J, He ZY, Liu S, Zhang YH, Kadlec EA, Olson BV, Shaner EA. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors Applied Physics Letters. 106. DOI: 10.1063/1.4913312 |
0.51 |
|
| 2014 |
Aytac Y, Olson BV, Kim JK, Shaner EA, Hawkins SD, Klem JF, Flatté ME, Boggess TF. Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Applied Physics Letters. 105. DOI: 10.1063/1.4890578 |
0.485 |
|
| 2014 |
Murray LM, Lokovic KS, Olson BV, Yildirim A, Boggess TF, Prineas JP. Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices Journal of Crystal Growth. 386: 194-198. DOI: 10.1016/J.Jcrysgro.2013.10.014 |
0.32 |
|
| 2013 |
Olson BV, Shaner EA, Kim JK, Klem JF, Hawkins SD, Flatté ME, Boggess TF. Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys Applied Physics Letters. 103. DOI: 10.1063/1.4817400 |
0.411 |
|
| 2013 |
Olson BV, Murray LM, Prineas JP, Flatté ME, Olesberg JT, Boggess TF. All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices Applied Physics Letters. 102. DOI: 10.1063/1.4807433 |
0.449 |
|
| 2013 |
Olson BV, Gehlsen MP, Boggess TF. Nondegenerate two-photon absorption in GaSb Optics Communications. 304: 54-57. DOI: 10.1016/J.Optcom.2013.04.035 |
0.608 |
|
| 2012 |
Haugan HJ, Brown GJ, Elhamri S, Olson BV, Boggess TF, Grazulis L, Pacley S. Annealing effect on the long wavelength infrared InAs/GaSbsuperlattice materials Proceedings of Spie. 8512. DOI: 10.1117/12.928713 |
0.408 |
|
| 2012 |
Olson BV, Shaner EA, Kim JK, Klem JF, Hawkins SD, Murray LM, Prineas JP, Flatté ME, Boggess TF. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Applied Physics Letters. 101. DOI: 10.1063/1.4749842 |
0.468 |
|
| 2012 |
Haugan HJ, Brown GJ, Elhamri S, Pacley S, Olson BV, Boggess TF. Post growth annealing study on long wavelength infrared InAs/GaSb superlattices Journal of Applied Physics. 111: 53113. DOI: 10.1063/1.3693535 |
0.387 |
|
| 2011 |
Haugan HJ, Brown GJ, Szmulowicz F, Elhamri S, Olson BV, Boggess TF, Grazulis L. The role of InAs thickness on the material properties of InAs/GaSb superlattices Proceedings of Spie. 8154. DOI: 10.1117/12.892751 |
0.433 |
|
| 2011 |
Koerperick EJ, Norton DT, Olesberg JT, Olson BV, Prineas JP, Boggess TF. Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared Ieee Journal of Quantum Electronics. 47: 50-54. DOI: 10.1109/Jqe.2010.2072492 |
0.416 |
|
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