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George A. Rozgonyi - Publications

Affiliations: 
Materials Science and Engineering North Carolina State University, Raleigh, NC 
Area:
General Engineering, Materials Science Engineering
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240 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Park Y, Lu J, Park J, Rozgonyi G. The Influence of Hydrogenation on the Electrical Properties of Impurity-Contaminated Silicon Grain Boundaries Electronic Materials Letters. 11: 993-997. DOI: 10.1007/S13391-015-5214-7  0.708
2015 Park Y, Lu J, Park JH, Rozgonyi G. Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing Electronic Materials Letters. 11: 658-663. DOI: 10.1007/S13391-015-5173-Z  0.731
2014 Bharathan J, Zhou H, Narayan J, Rozgonyi G, Bulman GE. Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures Journal of Electronic Materials. 43: 3196-3203. DOI: 10.1007/S11664-014-3247-6  0.798
2014 Leonard S, Markevich VP, Peaker AR, Hamilton B, Youssef K, Rozgonyi G. Molybdenum nano‐precipitates in silicon: A TEM and DLTS study Physica Status Solidi B-Basic Solid State Physics. 251: 2201-2204. DOI: 10.1002/Pssb.201400065  0.429
2013 Youssef K, Shi M, Radue C, Good E, Rozgonyi G. Effect of oxygen and associated residual stresses on the mechanical properties of high growth rate Czochralski silicon Journal of Applied Physics. 113. DOI: 10.1063/1.4798599  0.66
2013 Bharathan J, Narayan J, Rozgonyi G, Bulman GE. Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition Journal of Electronic Materials. 42: 2888-2896. DOI: 10.1007/S11664-013-2686-9  0.79
2013 Jiang T, Yu X, Gu X, Rozgonyi G, Yang D. Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates Physica Status Solidi (a). 210: 1828-1831. DOI: 10.1002/Pssa.201329252  0.368
2013 Shi M, Youssef K, Rozgonyi GA. Fracture strength of photovoltaic silicon wafers evaluated using a controlled flaw method Advanced Engineering Materials. 15: 756-760. DOI: 10.1002/Adem.201200312  0.576
2012 Youssef K, Yu X, Seacrist M, Rozgonyi G. Understanding the effect of impurities and grain boundaries on mechanical behavior of Si via nanoindentation of (110)/(100) direct Si bonded wafers Journal of Materials Research. 27: 349-355. DOI: 10.1557/Jmr.2011.265  0.406
2012 Kulshreshtha PK, Yoon Y, Youssef KM, Good EA, Rozgonyi G. Oxygen precipitation related stress-modified crack propagation in high growth rate czochralski silicon wafers Journal of the Electrochemical Society. 159: H125-H129. DOI: 10.1149/2.020202Jes  0.764
2012 Yoon Y, Yan Y, Ostrom NP, Kim J, Rozgonyi G. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon Applied Physics Letters. 101: 222107. DOI: 10.1063/1.4766337  0.445
2012 Yoon Y, Paudyal B, Kim J, Ok Y, Kulshreshtha P, Johnston S, Rozgonyi G. Publisher's Note: ``Effect of nickel contamination on high carrier lifetime n-type crystalline silicon'' [J. Appl. Phys. 111, 033702 (2012)] Journal of Applied Physics. 111: 49901. DOI: 10.1063/1.3689822  0.767
2012 Yoon Y, Paudyal B, Kim J, Ok YW, Kulshreshtha P, Johnston S, Rozgonyi G. Effect of nickel contamination on high carrier lifetime n-type crystalline silicon Journal of Applied Physics. 111. DOI: 10.1063/1.3680880  0.782
2012 Kulshreshtha PK, Youssef KM, Rozgonyi G. Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon Solar Energy Materials and Solar Cells. 96: 166-172. DOI: 10.1016/J.Solmat.2011.09.053  0.776
2012 Bharathan J, Narayan J, Rozgonyi G, Bulman GE. Poisson Ratio of Epitaxial Germanium Films Grown on Silicon Journal of Electronic Materials. 42: 40-46. DOI: 10.1007/S11664-012-2337-6  0.776
2012 Peaker AR, Markevich VP, Hamilton B, Parada G, Dudas A, Pap A, Don E, Lim B, Schmidt J, Yu L, Yoon Y, Rozgonyi G. Back Cover: Recombination via point defects and their complexes in solar silicon (Phys. Status Solidi A 10/2012) Physica Status Solidi (a). 209. DOI: 10.1002/Pssa.201290026  0.38
2012 Peaker AR, Markevich VP, Hamilton B, Parada G, Dudas A, Pap A, Don E, Lim B, Schmidt J, Yu L, Yoon Y, Rozgonyi G. Recombination via point defects and their complexes in solar silicon Physica Status Solidi (a). 209: 1884-1893. DOI: 10.1002/Pssa.201200216  0.448
2012 Jiang T, Yu X, Gu X, Yang D, Rozgonyi G. Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer Physica Status Solidi (a). 209: 990-993. DOI: 10.1002/Pssa.201127536  0.333
2011 Rozgonyi G, Youssef K, Kulshreshtha P, Shi M, Good E. Silicon PV wafers: Mechanical strength and correlations with defects and stress Solid State Phenomena. 178: 79-87. DOI: 10.4028/Www.Scientific.Net/Ssp.178-179.79  0.793
2011 Yu X, Li X, Lei D, Yang D, Rozgonyi G. Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (1 1 0)/(1 0 0) grain boundary Scripta Materialia. 64: 653-656. DOI: 10.1016/J.Scriptamat.2010.12.011  0.326
2010 Park Y, Lu J, Rozgonyi G. Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary Electronic Materials Letters. 6: 1-5. DOI: 10.3365/Eml.2010.03.001  0.672
2010 Yu X, Li X, Fan R, Yang D, Kittler M, Reiche M, Seibt M, Rozgonyi G. Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer Journal of Applied Physics. 108: 53719. DOI: 10.1063/1.3471817  0.388
2010 Yu X, Song L, Yang D, Kittler M, Rozgonyi GA. Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias Applied Physics Letters. 96. DOI: 10.1063/1.3431580  0.399
2010 Li X, Yu X, Song L, Yang D, Rozgonyi G. Effect of nickel contamination on grain boundary states at a direct silicon bonded (1 1 0)/(1 0 0) interface Scripta Materialia. 63: 1100-1103. DOI: 10.1016/J.Scriptamat.2010.08.013  0.308
2010 Yoon YH, Yi SM, Yim JR, Lee JH, Rozgonyi G, Joo YC. Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films Microelectronic Engineering. 87: 2230-2233. DOI: 10.1016/J.Mee.2010.02.008  0.311
2010 Li X, Yu X, Lei D, Yang D, Rozgonyi G. Effect of iron contamination on grain boundary states at a direct silicon bonded (110)/(100) interface Physica Status Solidi (Rrl) - Rapid Research Letters. 4: 350-352. DOI: 10.1002/Pssr.201004356  0.312
2009 Kulshreshtha PK, Youssef KM, Rozgonyi G. Evaluating Amorphization Around Micro-Cracks in PV Silicon Mrs Proceedings. 1210. DOI: 10.1557/Proc-1210-Q05-08  0.758
2009 Yu X, Lu J, Youssef K, Rozgonyi G. Proximity gettering of Cu at a "110…/"001… grain boundary interface formed by direct silicon bonding Applied Physics Letters. 94: 221909. DOI: 10.1063/1.3151914  0.332
2009 Lu J, Yu X, Park Y, Rozgonyi G. Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure Journal of Applied Physics. 105: 73712. DOI: 10.1063/1.3093912  0.685
2009 Park Y, Lu J, Rozgonyi G. Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers Journal of Applied Physics. 105: 14912. DOI: 10.1063/1.3063806  0.697
2008 Yu X, Lu J, Rozgonyi G. Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary Journal of Applied Physics. 104: 113702. DOI: 10.1063/1.3032655  0.52
2008 Lu J, Rozgonyi G, Seacrist M, Chaumont M, Campion A. Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures Journal of Applied Physics. 104: 074904. DOI: 10.1063/1.2986940  0.616
2008 Yu X, Lu J, Rozgonyi G. Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)∕(100) interface Applied Physics Letters. 92: 262102. DOI: 10.1063/1.2952513  0.552
2008 Zhang R, Rozgonyi GA, Yakimov E, Yarykin N, Seacrist M. Impact of thermal annealing on deep-level defects in strained- SiSiGe heterostructure Journal of Applied Physics. 103. DOI: 10.1063/1.2930998  0.659
2008 Lu J, Park Y, Rozgonyi GA. Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGeSi heterostructures Journal of Applied Physics. 103. DOI: 10.1063/1.2903154  0.703
2008 Lu J, Rozgonyi G. Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries Applied Physics Letters. 92: 82110. DOI: 10.1063/1.2887880  0.549
2008 Lu J, Rozgonyi GA, Schönecker A. Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS) Materials Science in Semiconductor Processing. 11: 20-24. DOI: 10.1016/J.Mssp.2008.07.001  0.639
2007 Wagener MC, Zhang RH, Zhao W, Seacrist M, Ries M, Rozgonyi GA. Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces Solid State Phenomena. 321-326. DOI: 10.4028/Www.Scientific.Net/Ssp.131-133.321  0.459
2007 Stoddard N, Wu B, Witting I, Wagener MC, Park Y, Rozgonyi GA, Clark R. Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers Solid State Phenomena. 1-8. DOI: 10.4028/Www.Scientific.Net/Ssp.131-133.1  0.61
2007 Park Y, Lu J, Rozgonyi GA. Gettering effect in low and high density structural defect regions of the cast multi-crystalline-silicon wafer Materials Research Society Symposium Proceedings. 994: 289-294. DOI: 10.1557/Proc-0994-F11-21  0.713
2007 Lu J, Park Y, Rozgonyi GA. Deep level transient spectroscopy study of dislocations in SiGe/Si heterostructures Materials Research Society Symposium Proceedings. 994: 251-256. DOI: 10.1557/Proc-0994-F09-04  0.697
2007 Zhao W, Duscher G, Zikry MA, Rozgonyi G. Reliable local strain characterization on Si/SiGe structures in biaxial tension Materials Research Society Symposium Proceedings. 958: 151-157. DOI: 10.1557/Proc-0958-L04-08  0.347
2007 Yakimov EB, Zhang RH, Rozgonyi GA, Seacrist M. EBIC characterization of strained Si/SiGe heterostructures Semiconductors. 41: 402-406. DOI: 10.1134/S1063782607040070  0.44
2007 Lu J, Rozgonyi G. Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)∕(100) bonded silicon wafer Applied Physics Letters. 91: 172106. DOI: 10.1063/1.2800811  0.56
2007 Wagener MC, Zhang RH, Seacrist M, Ries M, Rozgonyi GA. Electrical properties of hybrid-orientation silicon bonded interfaces Aip Conference Proceedings. 931: 279-283. DOI: 10.1063/1.2799384  0.301
2007 Zhao W, Duscher G, Rozgonyi G, Zikry MA, Chopra S, Ozturk MC. Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures Applied Physics Letters. 90. DOI: 10.1063/1.2738188  0.339
2007 Wagener MC, Zhang RH, Rozgonyi GA, Seacrist M, Ries M. Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces Applied Physics Letters. 90. DOI: 10.1063/1.2712802  0.349
2007 Wagener MC, Seacrist M, Rozgonyi GA. Passivation of hybrid-orientation direct silicon bonded interfaces Physica B: Condensed Matter. 401: 564-567. DOI: 10.1016/J.Physb.2007.09.022  0.348
2006 Lu J, Rozgonyi G. Oxygen and Carbon Precipitation in Crystalline Sheet Silicon Depth Profiling by Infrared Spectroscopy, and Preferential Defect Etching Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2347103  0.559
2005 Lu J, Rozgonyi GA, Rand J, Jonczyk R. Ebic study of electrical activity of stacking faults in multicrystalline sheet silicon Solid State Phenomena. 627-630. DOI: 10.4028/Www.Scientific.Net/Ssp.108-109.627  0.606
2005 Bray KR, Zhao W, Kordas L, Wise R, Robinson M, Rozgonyi G. Electrical, structural, and chemical analysis of defects in epitaxial sige-based heterostructures Journal of the Electrochemical Society. 152: C310-C315. DOI: 10.1149/1.1877952  0.501
2005 Stoddard N, Duscher G, Karoui A, Stevie F, Rozgonyi G. Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment Journal of Applied Physics. 97. DOI: 10.1063/1.1866480  0.788
2005 Lu J, Rozgonyi G, Schönecker A, Gutjahr A, Liu Z. Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon Journal of Applied Physics. 97: 33509. DOI: 10.1063/1.1847699  0.556
2005 Stoddard N, Duscher GJM, Windl W, Rozgonyi GA. A new understanding of near-threshold damage for 200 keV irradiation in silicon Journal of Materials Science. 40: 3639-3650. DOI: 10.1007/S10853-005-1059-Z  0.824
2004 Karoui FS, Karoui A, Rozgonyi GA, Hourai M, Sueoka K. Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics Solid State Phenomena. 95: 99-104. DOI: 10.4028/Www.Scientific.Net/Ssp.95-96.99  0.651
2004 Rozgonyi GA, Lu J, Zhang R, Rand J, Jonczyk R. Evaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical Diagnostics Solid State Phenomena. 95: 211-216. DOI: 10.4028/Www.Scientific.Net/Ssp.95-96.211  0.715
2004 Karoui FS, Karoui A, Rozgonyi G. Finite Element Analysis of Elastic and Plastic Deformation during Growth of Si 1−x Ge x /Si Heterostructures Mrs Proceedings. 824. DOI: 10.1557/Proc-824-P3.39.1  0.387
2004 Karoui A, Rozgonyi G, Ciszek T. Effect of Oxygen and Nitrogen Doping on Mechanical Properties of Silicon Using Nanoindentation Mrs Proceedings. 821. DOI: 10.1557/Proc-821-P8.36  0.439
2004 Karoui FS, Karoui A, Inoue N, Rozgonyi GA. Vibrational spectra of nitrogen-oxygen defects in nitrogen doped silicon using density functional theory Materials Research Society Symposium - Proceedings. 810: 381-386. DOI: 10.1557/Proc-810-C8.18  0.639
2004 Stoddard NG, Duscher G, Windl W, Rozgonyi GA. Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C3.9  0.812
2004 Lu J, Rozgonyi G, Rand J, Jonczyk R. Oxygen precipitate denuded zone in polycrystalline sheet silicon Applied Physics Letters. 85: 1178-1180. DOI: 10.1063/1.1781369  0.602
2004 Karoui A, Rozgonyi GA. Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling Journal of Applied Physics. 96: 3264-3271. DOI: 10.1063/1.1773922  0.675
2004 Karoui A, Karoui FS, Rozgonyi GA, Yang D. Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects Journal of Applied Physics. 96: 3255-3263. DOI: 10.1063/1.1773921  0.71
2004 Kvit A, Karoui A, Duscher G, Rozgonyi GA. "Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers Applied Physics Letters. 84: 1889-1891. DOI: 10.1063/1.1669069  0.676
2004 Zhang R, Van Dyk EE, Rozgonyi GA, Rand J, Jonczyk R. Investigation of foreign particles in polycrystalline silicon using infrared microscopy Solar Energy Materials and Solar Cells. 82: 577-585. DOI: 10.1016/J.Solmat.2003.11.031  0.576
2004 Lu J, Rozgonyi G, Rand J, Jonczyk R. Secondary phase inclusions in polycrystalline sheet silicon Journal of Crystal Growth. 269: 599-605. DOI: 10.1016/J.Jcrysgro.2004.05.022  0.59
2004 Van Dyk EE, Karoui A, La Rosa AH, Rozgonyi G. Near-field scanning optical microscopy for characterisation of photovoltaic materials Physica Status Solidi C: Conferences. 1: 2292-2297. DOI: 10.1002/Pssc.200404848  0.614
2004 Stoddard NG, Duscher G, Windl W, Rozgonyi GA. Simulation and electron energy-loss spectroscopy of electron beam induced point defect agglomerations in silicon Materials Research Society Symposium - Proceedings. 810: 115-120.  0.813
2004 Lu J, Zhao W, Rozgonyi GA, Liu Z, Wise R. Ge concentration profiles and defect characterization in high Ge content Si/SiGe heterostructure International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 3: 2131-2135.  0.386
2003 Rouvimov S, Kuytt R, Kearns J, Todt V, Orschel B, Siriwardane H, Buczkowski A, Shul'pina I, Rozgonyi GA. Defect Formation in Heavily As-Doped Cz Si Solid State Phenomena. 17-22. DOI: 10.4028/Www.Scientific.Net/Ssp.95-96.17  0.458
2003 Karoui A, Karoui FS, Rozgonyi GA, Hourai M, Sueoka K. Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1621418  0.664
2003 Stoddard N, Karoui A, Duscher G, Kvit A, Rozgonyi G. In Situ Point Defect Generation and Agglomeration during Electron-Beam Irradiation of Nitrogen-Doped Czochralski Silicon Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1614471  0.798
2003 Kvit A, Yankov RA, Duscher G, Rozgonyi G, Glasko JM. Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon Applied Physics Letters. 83: 1367-1369. DOI: 10.1063/1.1601678  0.414
2003 Lu J, Wagener M, Rozgonyi G, Rand J, Jonczyk R. Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon Journal of Applied Physics. 94: 140-144. DOI: 10.1063/1.1578699  0.612
2003 Rozgonyi GA, Karoui A, Kvit A, Duscher G. Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon Microelectronic Engineering. 66: 305-313. DOI: 10.1016/S0167-9317(02)00923-1  0.693
2002 Karoui A, Karoui FS, Yang D, Rozgonyi GA. Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers Solid State Phenomena. 82: 69-74. DOI: 10.4028/Www.Scientific.Net/Ssp.82-84.69  0.677
2002 Karoui A, Karoui FS, Kvit A, Rozgonyi GA, Yang D. Role of nitrogen related complexes in the formation of defects in silicon Applied Physics Letters. 80: 2114-2116. DOI: 10.1063/1.1462874  0.7
2002 Yoganand SN, Raghuveer MS, Jagannadham K, Wu L, Karoui A, Rozgonyi G. Multilayer TiC/TiN diffusion barrier films for copper Applied Physics Letters. 80: 79-81. DOI: 10.1063/1.1430027  0.66
2001 Ono T, Sasaki T, Kirk H, Rozgonyi GA. Electron beam induced current contrast of oxygen precipitation related defects in Czochralski silicon Solid State Phenomena. 78: 237-252. DOI: 10.4028/Www.Scientific.Net/Ssp.78-79.237  0.468
2000 Rozgonyi GA, Glasko JM, Beaman KL, Koveshnikov SV. Gettering issues using MeV ion implantation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 72: 87-92. DOI: 10.1016/S0921-5107(99)00506-1  0.406
2000 Karoui FS, Karoui A, Rozgonyi GA. Simulation of point defect clustering in Cz-silicon wafers on the cray T3E scalable parallel computer: Application to oxygen precipitation 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 98-101.  0.604
1999 Yarykin N, Cho CR, Zuhr RA, Rozgonyi GA. In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions Diffusion and Defect Data Pt.B: Solid State Phenomena. 69: 397-402. DOI: 10.4028/Www.Scientific.Net/Ssp.69-70.397  0.365
1999 Beaman KL, Glasko JM, Koveshnikov SV, Rozgonyi GA. Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon Diffusion and Defect Data Pt.B: Solid State Phenomena. 69: 247-252. DOI: 10.4028/Www.Scientific.Net/Ssp.69-70.247  0.438
1999 Cho CR, Yarykin N, Rozgonyi GA, Zuhr RA. In-situ photoexcitation-induced suppression of point defect generation in ion implanted silicon Materials Research Society Symposium - Proceedings. 568: 187-192. DOI: 10.1557/Proc-568-187  0.43
1999 Ono T, Romanowski A, Asayama E, Horie H, Sueoka K, Tsuya H, Rozgonyi GA. Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon Journal of the Electrochemical Society. 146: 3461-3465. DOI: 10.1149/1.1392496  0.408
1999 Ono T, Asayama E, Horie H, Hourai M, Sueoka K, Tsuya H, Rozgonyi GA. Effect of Heavy Boron Doping on Oxide Precipitate Growth in Czochralski Silicon Journal of the Electrochemical Society. 146: 2239-2244. DOI: 10.1149/1.1391921  0.407
1999 Beaman KL, Kononchuk O, Koveshnikov S, Osburn CM, Rozgonyi GA. Lateral gettering of Fe on bulk and silicon-on-insulator wafers Journal of the Electrochemical Society. 146: 1925-1928. DOI: 10.1149/1.1391867  0.395
1999 Kirk HR, Radzimski Z, Romanowski A, Rozgonyi GA. Bias dependent contrast mechanisms in EBIC images of MOS capacitors Journal of the Electrochemical Society. 146: 1529-1535. DOI: 10.1149/1.1391799  0.485
1999 Sasaki T, Ono T, Rozgonyi GA. Size distribution of oxide precipitates in annealed Czochralski silicon Electrochemical and Solid-State Letters. 2: 589-591. DOI: 10.1149/1.1390915  0.36
1999 Ono T, Rozgonyi G, Horie H, Miyazaki M, Tsuya H. Analysis of capacitor breakdown mechanisms due to crystal-originated pits Ieee Electron Device Letters. 20: 504-506. DOI: 10.1109/55.791924  0.32
1999 Romanowski A, Rozgonyi G, Tamatsuka M. Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers Journal of Applied Physics. 85: 6408-6414. DOI: 10.1063/1.370144  0.397
1999 Yarykin N, Cho CR, Rozgonyi GA, Zuhr RA. The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K Applied Physics Letters. 75: 241-243. DOI: 10.1063/1.124335  0.393
1999 Cho CR, Yarykin N, Brown RA, Kononchuk O, Rozgonyi GA, Zuhr RA. Evolution Of Deep-Level Centers In P-Type Silicon Following Ion Implantation At 85 K Applied Physics Letters. 74: 1263-1265. DOI: 10.1063/1.123519  0.39
1999 Ono T, Rozgonyi GA, Asayama E, Horie H, Tsuya H, Sueoka K. Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers Applied Physics Letters. 74: 3648-3650. DOI: 10.1063/1.123210  0.399
1999 Yarykin N, Cho CR, Zuhr R, Rozgonyi G. In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions Physica B-Condensed Matter. 273: 485-488. DOI: 10.1016/S0921-4526(99)00531-1  0.392
1999 Koveshnikov S, Choi B, Yarykin N, Rozgonyi G. Drift of interstitial iron in a space charge region of p-type Si Schottky diode Physica B-Condensed Matter. 273: 395-397. DOI: 10.1016/S0921-4526(99)00488-3  0.314
1999 Brown RA, Kononchuk O, Rozgonyi GA. Simulation of metallic impurity gettering in silicon by MeV ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 148: 322-328. DOI: 10.1016/S0168-583X(98)00765-4  0.394
1998 Kononchuk OV, Bondarenko IE, Rozgonyi GA. Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers Solid State Phenomena. 61-68. DOI: 10.4028/Www.Scientific.Net/Ssp.63-64.61  0.364
1998 Cho CR, Brown RA, Kononchuk O, Yarykin N, Rozgonyi G, Zuhr R. In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K Mrs Proceedings. 532: 73. DOI: 10.1557/Proc-532-73  0.361
1998 Tamatsuka M, Radzimski Z, Rozgonyi GA, Oka S, Kato M, Kitagawara Y. Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37: 1236-1239. DOI: 10.1143/Jjap.37.1236  0.397
1998 Koveshnikov SV, Rozgonyi GA. Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon Journal of Applied Physics. 84: 3078-3084. DOI: 10.1063/1.368462  0.452
1998 Brown RA, Kononchuk O, Rozgonyi GA, Koveshnikov S, Knights AP, Simpson PJ, González F. Impurity gettering to secondary defects created by MeV ion implantation in silicon Journal of Applied Physics. 84: 2459-2465. DOI: 10.1063/1.368438  0.426
1998 Romanowski A, Buczkowski A, Karoui A, Rozgonyi GA. Frequency-resolved microwave reflection photoconductance Journal of Applied Physics. 83: 7730-7735. DOI: 10.1063/1.367946  0.599
1998 Kononchuk O, Korablev KG, Yarykin N, Rozgonyi GA. Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures Applied Physics Letters. 73: 1206-1208. DOI: 10.1063/1.122128  0.397
1998 Romanowski A, Buczkowski A, Karoui A, Rozgonyi GA. Contactless frequency resolved photoconductance (FR-PC) measurement of iron contaminated p-type silicon Astm Special Technical Publication. 68-79.  0.59
1998 Karoui A, Zhang Q, Romanowski A, Rozgonyi GA, Rushbrook P, Daviet JF. Recombination lifetime variations and defect introduction by rapid thermal processing Astm Special Technical Publication. 250-258.  0.634
1997 Tamatsuka M, Radzimski Z, Rozgonyi GA, Oka S, Kato M, Kitagawara Y. Medium Field Breakdown Following Local Tunneling Current on MOS Capacitor Containing Grown-in CZ Crystal Defects The Japan Society of Applied Physics. 1997: 392-393. DOI: 10.7567/Ssdm.1997.D-7-2  0.32
1997 Kononchuk O, Brown RA, Koveshnikov S, Beaman K, Gonzalez F, Rozgonyi GA. Metallic impurity gettering in MeV implanted Si Solid State Phenomena. 57: 69-74. DOI: 10.4028/Www.Scientific.Net/Ssp.57-58.69  0.433
1997 Gonzalez F, McQueen M, Barbour R, Rozgonyi GA. Ring-related defects in MCZ wafer comparison by electrical, structural, and device properties Materials Research Society Symposium - Proceedings. 469: 119-124. DOI: 10.1557/Proc-469-119  0.304
1997 Brown RA, Ravi J, Erokhin Y, Rozgonyi GA, White CW. Charge state defect engineering of silicon during ion implantation Materials Research Society Symposium - Proceedings. 439: 131-136. DOI: 10.1557/Proc-439-131  0.367
1997 Brown RA, Kononchuk O, Bondarenko I, Romanowski A, Radzimski Z, Rozgonyi GA, Gonzalez F. Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon Journal of the Electrochemical Society. 144: 2872-2881. DOI: 10.1149/1.1837910  0.471
1997 Beaman KL, Agarwal A, Kononchuk O, Koveshnikov S, Bondarenko I, Rozgonyi GA. Gettering of iron in silicon-on-insulator wafers Applied Physics Letters. 71: 1107-1109. DOI: 10.1063/1.119741  0.353
1997 Brown RA, Kononchuk O, Radzimski Z, Rozgonyi GA, Gonzalez F. The effect of oxygen on secondary defect formation in MeV self-implanted silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 127: 55-58. DOI: 10.1016/S0168-583X(96)00848-8  0.436
1996 Kirk HR, Radzimski Z, Romanowski A, Rozgonyi GA. Electron beam induced current imaging of silicon oxide damage due to reactive ion etching Solid State Phenomena. 51: 359-364. DOI: 10.4028/Www.Scientific.Net/Ssp.51-52.359  0.371
1996 Kononchuk OV, Rozgonyi GA, Yakimov EB. Measurements of diffusion length in Si-SiGe structures Solid State Phenomena. 47: 601-606. DOI: 10.4028/Www.Scientific.Net/Ssp.47-48.601  0.368
1996 Park JG, Rozgonyi GA. DRAM wafer qualification issues: Oxide integrity vs. D-defects, oxygen precipitates and high temperature annealing Solid State Phenomena. 47: 327-352. DOI: 10.4028/Www.Scientific.Net/Ssp.47-48.327  0.373
1996 Koveshnikov S, Agarwal A, Beaman K, Rozgonyi GA. Defect engineering for silicon-on-insulator, MeV implantation and low temperature processing Solid State Phenomena. 47: 183-194. DOI: 10.4028/Www.Scientific.Net/Ssp.47-48.183  0.449
1996 Brown RA, Kononchuk O, Radzimski Z, Rozgonyi GA, Gonzalez F. Secondary defect formation and gettering in MeV self-implanted silicon Materials Research Society Symposium - Proceedings. 438: 155-160. DOI: 10.1557/Proc-438-155  0.417
1996 Agarwal A, Christensen K, Venables D, Maher DM, Rozgonyi GA. Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon Applied Physics Letters. 69: 3899-3901. DOI: 10.1063/1.117563  0.445
1996 Kononchuk O, Brown RA, Radzimski Z, Rozgonyi GA, Gonzalez F. Gettering of Fe to below 1010 cm-3 in MeV self-implanted czochralski and float zone silicon Applied Physics Letters. 69: 4203-4205. DOI: 10.1063/1.116986  0.459
1996 Raebiger J, Romanowski A, Zhang Q, Rozgonyi G. Carrier lifetime and x‐ray imaging correlations of an oxide‐induced stacking fault ring and its gettering behavior in Czochralski silicon Applied Physics Letters. 69: 3037-3038. DOI: 10.1063/1.116831  0.329
1996 Koveshnikov S, Rozgonyi G. Response to ‘‘Comment on ‘Iron diffusivity in silicon: Impact of charge state’ ’’ [Appl. Phys. Lett. 68, 1868 (1996)] Applied Physics Letters. 68: 1870-1871. DOI: 10.1063/1.116041  0.317
1996 Sekiguchi T, Sumino K, Radzimski ZJ, Rozgonyi GA. Cathodoluminescence and EBIC study on misfit dislocations in SiGe/Si heterostructure Materials Science and Engineering B. 42: 141-145. DOI: 10.1016/S0921-5107(96)01695-9  0.371
1996 Bondarenko I, Kirk H, Kononchuk O, Rozgonyi G. Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI Materials Science and Engineering B-Advanced Functional Solid-State Materials. 42: 32-37. DOI: 10.1016/S0921-5107(96)01679-0  0.405
1995 Park JG, Jung JK, Cho KC, Rozgonyi GA. Nature of D-defect in CZ silicon: D-defect dissolution and D-defect related T.D.D.B Materials Science Forum. 196: 1697-1706. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.1697  0.367
1995 Ravi J, Erokhin Y, Christensen K, Rozgonyi GA, Patnaik BK, White CW. Suppression of self-interstitials in silicon during ion implantation via in-situ photoexcitation Materials Research Society Symposium - Proceedings. 373: 475-480. DOI: 10.2172/46696  0.403
1995 Agarwal A, Koveshnikov S, Christensen K, Rozgonyi GA. Electrical and structural properties of MeV Si+ ion implantation in silicon Materials Research Society Symposium - Proceedings. 378: 71-76. DOI: 10.1557/Proc-378-71  0.459
1995 Beaman KL, Agarwal A, Koveshnikov SV, Rozgonyi GA. Lateral Diffusion and Capture of Iron in P-Type Silicon Mrs Proceedings. 378. DOI: 10.1557/Proc-378-291  0.339
1995 Ravi J, Erokhin Y, Rozgonyi GA, White CW. Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation Applied Physics Letters. 67: 2158. DOI: 10.1063/1.114752  0.36
1995 Erokhin YN, Ravi J, Rozgonyi GA, White CW. In situ electric field perturbations of deep trap accumulation in silicon during proton ion implantation Applied Physics Letters. 1656. DOI: 10.1063/1.113883  0.372
1995 Koveshnikov SV, Rozgonyi GA. Iron diffusivity in silicon: Impact of charge state Applied Physics Letters. 860. DOI: 10.1063/1.113411  0.337
1995 Erokhin YN, Ravi J, White CW, Rozgonyi GA. Recombination enhanced suppression of deep trap accumulation in silicon during He+ ion implantation Nuclear Inst. and Methods in Physics Research, B. 96: 223-226. DOI: 10.1016/0168-583X(94)00487-0  0.396
1994 Hong F, Rozgonyi GA. Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti-Si(100) System Journal of the Electrochemical Society. 141: 3480-3488. DOI: 10.1149/1.2059357  0.421
1994 Kirk HR, Radzimski Z, Buczkowski A, Rozgonyi GA. Low Temperature Identification of Interfacial and Bulk Defects in Al/SiO2/Si Capacitor Structures by Electron Beam Induced Current Ieee Transactions On Electron Devices. 41: 959-963. DOI: 10.1109/16.293308  0.352
1994 Lee DM, Rozgonyi GA. Low-temperature gettering of trace iron and copper by misfit dislocations in Si/Si(Ge) epitaxy Applied Physics Letters. 65: 350-352. DOI: 10.1063/1.112370  0.364
1994 Braga N, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial Si/Si(Ge) Applied Physics Letters. 64: 1410-1412. DOI: 10.1063/1.111899  0.455
1994 Hong F, Rozgonyi GA, Patnaik BK. Mechanisms of epitaxial CoSi2 formation in the multilayer Co/Ti-Si(100) system Applied Physics Letters. 64: 2241-2243. DOI: 10.1063/1.111657  0.452
1994 Higgs V, Zhou TQ, Rozgonyi GA. Cathodoluminescence imaging of misfit dislocations in Si/SiGe epitaxial layers: the influence of transition metal contamination Materials Science and Engineering B. 24: 48-51. DOI: 10.1016/0921-5107(94)90295-X  0.375
1994 Agarwal A, Koveshnikov S, Kirk H, Braga N, Rozgonyi GA. Metastable electrical activity of misfit-dislocation-associated defects in Si/Si(Ge) heteroepitaxial structures: EBIC/DLTS correlation Materials Science and Engineering B. 24: 43-47. DOI: 10.1016/0921-5107(94)90294-1  0.506
1993 Koveshnikov SV, Agarwal A, Rozgonyi GA. Metastable states associated with interfacial misfit dislocations in Si/Si(Ge) heterostructures Solid State Phenomena. 32: 325-332. DOI: 10.4028/Www.Scientific.Net/Ssp.32-33.325  0.47
1993 Radzimski ZJ, Buczkowski A, Rozgonyi GA. Defect electrical activity study using a Si(Ge) heteroepitaxial structure Solid State Phenomena. 32: 309-318. DOI: 10.4028/Www.Scientific.Net/Ssp.32-33.309  0.425
1993 Ravi J, Erokhin YN, Koveshnikov S, Rozgonyi GA, White CW. The influence of an in-situ electric field on H{sup +} and He{sup +} implantation induced defects in silicon Mrs Proceedings. 316: 105. DOI: 10.1557/Proc-316-105  0.361
1993 Hong F, Patnaik BK, Li B, Liu P, Sun Z, Rozgonyi GA. Phase Transformation of Co Silicidation in the Co/Ti- and Ti/Co-Si(100) Systems Mrs Proceedings. 311: 305. DOI: 10.1557/Proc-311-305  0.339
1993 Pramaanick S, Patnaik BK, Rozgonyi GA. Agglomeration-free nanoscale cobalt silicide film formation via substrate preamorphization Materials Research Society Symposium Proceedings. 309: 475-480. DOI: 10.1557/Proc-309-475  0.349
1993 Hong F, Patnaik BK, Rozgonyi GA, Osburn CM. Self-aligned epitaxial CoSi2 formation from multilayer Co/ Ti-Si(100) by a two-step RTA process Materials Research Society Symposium Proceedings. 303: 69-74. DOI: 10.1557/Proc-303-69  0.429
1993 Buczkowski A, Rozgonyi G, Shimura F, Mishra K. Photoconductance Minority Carrier Lifetime vs. Surface Photovoltage Diffusion Length In Silicon Journal of the Electrochemical Society. 140: 3240-3245. DOI: 10.1149/1.2221017  0.329
1993 Buczkowski A, Rozgonyi GA, Shimura F. Effect of Ultraviolet Irradiation on Surface Recombination Velocity in Silicon Wafers Japanese Journal of Applied Physics. 32: L218-L221. DOI: 10.1143/Jjap.32.L218  0.347
1993 Liu P, Li B, Sun Z, Gu Z, Huang W, Zhou Z, Ni R, Lin C, Zou S, Hong F, Rozgonyi GA. Epitaxial growth of CoSi2 on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system Journal of Applied Physics. 74: 1700-1706. DOI: 10.1063/1.354824  0.451
1993 Zhou TQ, Buczkowski A, Radzimski ZJ, Rozgonyi GA. Enhanced surface/interface recombination and surface inversion of Ni decorated Si/Si(Ge)/Si heterostructures Journal of Applied Physics. 73: 8412-8418. DOI: 10.1063/1.353410  0.466
1993 Lee J, Rozgonyi GA, Patnaik BK, Knoesen D, Adams D, Balducci P, Salih ASM. Formation and diffusion behavior of intermixed and segregated amorphous layers in sputtered NiCr films on Si Journal of Applied Physics. 73: 4023-4029. DOI: 10.1063/1.352869  0.414
1993 Pramanick S, Erokhin YN, Patnaik BK, Rozgonyi GA. Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon Applied Physics Letters. 63: 1933-1935. DOI: 10.1063/1.110804  0.442
1993 Erokhin YN, Hong F, Pramanick S, Rozgonyi GA, Patnaik BK, White CW. Spatially confined nickel disilicide formation at 400°C on ion implantation preamorphized silicon Applied Physics Letters. 63: 3173-3175. DOI: 10.1063/1.110214  0.447
1993 Radzimski ZJ, Buczkowski A, Zhou TQ, Dube C, Rozgonyi GA. Electron beam induced current studies of defect induced conductivity inversion Scanning Microscopy. 7: 513-521.  0.347
1992 Erokhin YN, Pramanick S, Hong F, Rozgonyi GA, Patnaik BK. Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon Mrs Proceedings. 279. DOI: 10.1557/Proc-279-237  0.45
1992 Honeycutt JW, Ravi J, Rozgonyi GA. Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon Mrs Proceedings. 262. DOI: 10.1557/Proc-262-701  0.358
1992 Agarwal A, Radzimski ZJ, Buczkowski A, Shimura F, Rozgonyi GA. Metallic Impurities in n- and p- Type Silicon: Dlts Studies Mrs Proceedings. 262. DOI: 10.1557/Proc-262-615  0.306
1992 Kirk HR, Radzimski ZJ, Fitzgerald EA, Rozgonyi GA. Ebic Analysis of Gettering at Si-Si (Ge) Heteroepitaxial Misfit Dislocations as a Function of Impurity Decoration Mrs Proceedings. 262. DOI: 10.1557/Proc-262-609  0.439
1992 Buczkowski A, Rozgonyi GA, Shimura F. Deep Level Energy Analysis of Surface and Bulk Defects Using a Noncontact Laser/Microwave Photoconductance Technique Mrs Proceedings. 261: 235. DOI: 10.1557/Proc-261-235  0.302
1992 Nemanich RJ, Jeon H, Sukow CA, Honeycutt JW, Rozgonyi GA. Nucleation and Morphology of TiSi 2 on Si Mrs Proceedings. 260. DOI: 10.1557/Proc-260-195  0.426
1992 Hong F, Patnaik BK, Rozgonyi GA. Solid State Interaction and Nano-Scale Silicide Formation for Co/Ti Multilayers on Silicon Mrs Proceedings. 260. DOI: 10.1557/Proc-260-187  0.415
1992 Xiao ZG, Canovai CA, Osburn CM, Rozgonyi GA. Partial agglomeration during Co silicide film formation Journal of Materials Research. 7: 269-272. DOI: 10.1557/Jmr.1992.0269  0.342
1992 Jeon H, Sukow CA, Honeycutt JW, Rozgonyi GA, Nemanich RJ. Morphology and phase stability of TiSi2 on Si Journal of Applied Physics. 71: 4269-4276. DOI: 10.1063/1.350808  0.435
1992 Hong F, Rozgonyi GA, Patnaik B. Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substrates Applied Physics Letters. 61: 1519-1521. DOI: 10.1063/1.108465  0.379
1992 Buczkowski A, Katayama K, Rozgonyi GA, Shimura F. Noncontact mobility measurements with a laser/microwave photoconductance technique: Temperature dependence Applied Physics Letters. 60: 1229-1231. DOI: 10.1063/1.107414  0.315
1992 Radzimski ZJ, Zhou TQ, Buczkowski A, Rozgonyi GA, Finn D, Hellwig LG, Ross JA. Recombination at clean and decorated misfit dislocations Applied Physics Letters. 60: 1096-1098. DOI: 10.1063/1.106455  0.464
1991 Rozgonyi GA, Honeycutt JW. Point defect engineering for ULSI silicide processing Gettering and Defect Engineering in Semiconductor Technology. 121-136. DOI: 10.4028/Www.Scientific.Net/Ssp.19-20.121  0.422
1991 Hong F, Patnaik B, Rozgonyi GA. CoSi2 Formation Through Co/Ti Multilayer Reacting with Si-(100) Substrate Mrs Proceedings. 238. DOI: 10.1557/Proc-238-587  0.42
1991 Hahn S, Smith WL, Suga H, Park J-, Lim C-, Kwak Y-, Meinecke R, Kola RR, Rozgonyi GA, Kwack KD. Investigation of Metal Induced Surface Defects in Czochralski Si Following Rapid Thermal Processing by Thermal Wave Modulated Reflectance Method Mrs Proceedings. 224. DOI: 10.1557/Proc-224-81  0.355
1991 Zhou T, Buczkowski A, Radzimski Z, Rozgonyi GA. The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA Mrs Proceedings. 224. DOI: 10.1557/Proc-224-55  0.405
1991 Buczkowski A, Radzimski ZJ, Rozgonyi GA. Conductivity - Type Conversion in Mu1 tiple-Implant / Multiple-Anneal SO1 Ieee Transactions On Electron Devices. 38: 61-66. DOI: 10.1109/16.65737  0.39
1991 Zhou TQ, Radzimski Z, Patnaik B, Rozgonyi GA, Sopori B. Conductivity-type inversion following low-energy hydrogen implantation Applied Physics Letters. 58: 1985-1987. DOI: 10.1063/1.105040  0.351
1991 Rozgonyi GA, Lee J, Knoesen D, Adams D, Patnaik B, Parikh N, Salih ASM, Balducci P. NiSi formation through a semipermeable membrane of amorphous Cr(Ni) Applied Physics Letters. 58: 729-731. DOI: 10.1063/1.104529  0.397
1991 Osburn CM, Wang QF, Kellam M, Canovai C, Smith PL, McGuire GE, Xiao ZG, Rozgonyi GA. Incorporation of metal silicides and refractory metals in VLSI technology Applied Surface Science. 53: 291-312. DOI: 10.1016/0169-4332(91)90279-S  0.312
1991 Radzimski ZJ, Zhou TQ, Buczkowski AB, Rozgonyi GA. Electrical activity of dislocations: Prospects for practical utilization Applied Physics a Solids and Surfaces. 53: 189-193. DOI: 10.1007/Bf00324249  0.471
1990 Buczkowski A, Radzimski ZJ, Kirino Y, Shimura F, Rozgonyi GA. Temperature Dependent Recombination Lifetime in Silicon: Influence of Trap Level Mrs Proceedings. 209: 567. DOI: 10.1557/Proc-209-567  0.494
1990 Honeycutr JW, Rozgonyi GA. Point Defect Injection and Enhanced Sb Diffusion in Si During Co-Si and Ti-Si Reactions Mrs Proceedings. 209: 517. DOI: 10.1557/Proc-209-517  0.437
1990 Patnaik BK, Lee JH, Adams D, Rozgonyi GA, Parikh NR, Swanson ML, Salih ASM, Balducci P. Kinetics of NiSi Formation by Solid State Diffusion in Pt/NiCr/Si Via Growth of an Amorphous Cr-Rich Barrier Layer Mrs Proceedings. 205: 275. DOI: 10.1557/Proc-205-275  0.38
1990 Jeon H, Honeycutt JW, Sukow CA, Rozgonyi GA, Nemanich RJ. Thickness Dependence of Epitaxial TiSi 2 on Si(111). Mrs Proceedings. 202: 673. DOI: 10.1557/Proc-202-673  0.439
1990 Xiao ZG, Honeycutt JW, Rozgonyi GA. Influence of Silicon Substrate Ion Implantation on the Subsequent Microstructure Evolution in Cobalt Silicide Films Mrs Proceedings. 202: 259. DOI: 10.1557/Proc-202-259  0.364
1990 Xiao ZG, Rozgonyi GA, Canovai CA, Osburn CM. Agglomeration of Cobalt Silicide Films Mrs Proceedings. 202: 101. DOI: 10.1557/Proc-202-101  0.323
1990 Knoesen D, Zhang F, Rozgonyi GA. Delineation of p-n Junctions on Cross Sectional TEM Device Samples Mrs Proceedings. 199. DOI: 10.1557/Proc-199-299  0.345
1990 Jeon H, Honeycutt JW, Sukow CA, Humphreys TP, Nemanich RJ, Rozgonyi GA. Epitaxial Growth and Stability of C49 TiSi 2 ON Si(111). Mrs Proceedings. 198: 595. DOI: 10.1557/Proc-198-595  0.369
1990 Xiao ZG, Jiang H, Honeycutt J, Osburn CM, Mcguire G, Rozgonyi GA. Tisi 2 Thin Films Formed on Crystalline and Amorphous Silicon Mrs Proceedings. 182: 167. DOI: 10.1557/Proc-182-65  0.482
1990 Jeon H, Sukow CA, Honeycutt JW, Humphreys TP, Nemanich RJ, Rozgonyi GA. Interface Morphology, Nucleation and Island Formation of Tisi 2 on Si(111). Mrs Proceedings. 181. DOI: 10.1557/Proc-181-559  0.402
1990 Kirino Y, Buczkowski A, Radzimski ZJ, Rozgonyi GA, Shimura F. Noncontact energy level analysis of metallic impurities in silicon crystals Applied Physics Letters. 57: 2832-2834. DOI: 10.1063/1.103756  0.36
1990 Rozgonyi GA, Radzimski ZJ, Kola RR, Smith WL, Bivas A. Correlation of modulated optical reflectance with silicon carrier lifetime and impurity concentration Applied Physics Letters. 56: 1169-1171. DOI: 10.1063/1.102552  0.381
1990 Hahn S, Smith WL, Suga H, Meinecke R, Kola RR, Rozgonyi GA. Studies of metal-induced surface defects in czochralski Si following rapid thermal processing with thermal wave method Journal of Crystal Growth. 103: 206-216. DOI: 10.1016/0022-0248(90)90191-M  0.357
1990 Bivas A, Lee Smith W, Kola RR, Radzimski ZJ, Rozgonyi GA. Thermal wave imaging of misfit dislocations and correlation with minority carrier lifetime Journal of Crystal Growth. 103: 200-205. DOI: 10.1016/0022-0248(90)90190-V  0.421
1990 Jiang H, Osburn CM, Xiao ZG, McGuire G, Rozgonyi GA. Shallow junction formation using diffusion from self-aligned silicides Proceedings - the Electrochemical Society. 90: 862-875.  0.301
1989 Rozgonyi GA, Kola RR. Defect Engineering for ULSI Epitaxial Silicon Solid State Phenomena. 143-158. DOI: 10.4028/Www.Scientific.Net/Ssp.6-7.143  0.39
1989 Zhou T, Radzimski Z, Xiao Z, Sopori B, Rozgonyi GA. Hydrogen Induced Defects at Silicon Surfaces and Buried Epitaxial Misfit Dislocation Interfaces Mrs Proceedings. 163. DOI: 10.1557/Proc-163-449  0.441
1989 Jeon H, Nemanich RJ, Honeycutt JW, Rozgonyi GA. Surface Morphologies and Interfaces of TiSi 2 Formed from UHV Deposited Ti on Si Mrs Proceedings. 160: 307. DOI: 10.1557/Proc-160-307  0.422
1989 Rogers WB, Massoud HZ, Fair RB, Gösele UM, Tan TY, Rozgonyi GA. The role of silicon self‐interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon Journal of Applied Physics. 65: 4215-4219. DOI: 10.1063/1.343303  0.408
1989 Kola RR, Rozgonyi GA, Li J, Rogers WB, Tan TY, Bean KE, Lindberg K. Transition metal silicide precipitation in silicon induced by rapid thermal processing and free‐surface gettering Applied Physics Letters. 55: 2108-2110. DOI: 10.1063/1.102342  0.434
1989 Shimura F, Jiang BL, Rozgonyi GA. X-ray moire pattern in defect-free silicon-on-insulator wafers prepared by oxygen ion implantation . 112-113.  0.305
1988 Ozguz VH, Wortman JJ, Hauser JR, Littlejohn MA, Rozgonyi GA, Curran P. CONDUCTIVITY OF ION IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING POLYCRYSTALLINE SILICON Journal of the Electrochemical Society. 135: 665-671. DOI: 10.1149/1.2095703  0.367
1988 Radzimski Z, Honeycutt J, Rozgonyi GA. Minority-Carrier Lifetime Analysis of Silicon Epitaxy and Bulk Crystals with Nonuniformly Distributed Defects Ieee Transactions On Electron Devices. 35: 80-84. DOI: 10.1109/16.2418  0.443
1988 Lee DM, Posthill JB, Shimura F, Rozgonyi GA. Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: Nickel Applied Physics Letters. 53: 370-372. DOI: 10.1063/1.99897  0.469
1988 Radzimski ZJ, Jiang BL, Rozgonyi GA, Humphreys TP, Hamaguchi N, Parker C, Bedair SM. Misfit stress relaxation phenomena in GaAsP‐InGaAs strained‐layer superlattices Applied Physics Letters. 52: 1692-1694. DOI: 10.1063/1.99638  0.318
1988 Ajmera AC, Rozgonyi GA, Fair RB. Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation Applied Physics Letters. 52: 813-815. DOI: 10.1063/1.99292  0.445
1988 Jiang BL, Shimura F, Rozgonyi GA, Hamaguchi N, Bedair SM. Single-crystal x-ray diffraction study of the InGaAs-GaAsP/GaAs superlattice system Applied Physics Letters. 52: 1258-1260. DOI: 10.1063/1.99174  0.312
1988 Radzimski ZJ, Jiang BL, Rozgonyi GA, Humphreys TP, Hamaguchi N, Bedair SM. Depth‐dependent imaging of dislocations in heteroepitaxial layers Journal of Applied Physics. 64: 2328-2333. DOI: 10.1063/1.341663  0.355
1988 Jiang BL, Shimura F, Rozgonyi GA, Hamaguchi N, Bedair SM. Erratum: Single‐crystal x‐ray diffraction study of the InGaAs‐GaAsP/GaAs superlattice system [Appl. Phys. Lett. 52, 1258 (1988)] Applied Physics Letters. 53: 537-537. DOI: 10.1063/1.100420  0.315
1988 Higuchi T, Gaylord E, Rozgonyi GA, Shimura F. Minority-carrier lifetime of magnetic field applied Czochralski silicon wafers Applied Physics Letters. 53: 1850-1852. DOI: 10.1063/1.100374  0.32
1988 Hamaguchi N, Humphreys T, Moore D, Parker C, Bedair S, Tarn J, Jiang B, El-Masry N, Radzimski Z, Rozgonyi G. Dislocation interactions in strained-layer structures grown on GaAs and Si substrates Journal of Crystal Growth. 93: 449-458. DOI: 10.1016/0022-0248(88)90566-0  0.451
1987 Kola RR, Posthill JB, Salih ASM, Rozgonyi GA, Bean KE, Lindberg K. Defect and Dopant Control During Silicon Epitaxy Using B and Ge Mrs Proceedings. 104. DOI: 10.1557/Proc-104-641  0.412
1987 Honeycutt J, Radzimski Z, Kola RR, Salih ASM, Rozgonyi GA. Electrical Characterization of Silicon With Buried Defects Mrs Proceedings. 104. DOI: 10.1557/Proc-104-121  0.417
1987 Hamaguchi N, Humphreys TP, Parker CA, Bedair SM, Jiang B, Radzimski ZJ, Rozgonyi GA. X-ray topography and EBIC studies of misfit dislocations in strained layer structures Mrs Proceedings. 102. DOI: 10.1557/Proc-102-541  0.324
1987 Karam N, Liu H, Yoshida I, Katsuyama T, Bedair S, El-Masry N, Jaing B, Salih A, Rozgonyi G. Laser Enhanced Selective Epitaxy of ιii-V Compounds Mrs Proceedings. 101. DOI: 10.1557/Proc-101-285  0.338
1987 Alford TL, Yang DK, Maszara W, Ozguz VH, Wortman JJ, Rozgonyi GA. Microstructure of Implanted and Rapid Thermal Annealed Semi‐Insulating Polycrystalline Oxygen‐Doped Silicon Journal of the Electrochemical Society. 134: 998-1003. DOI: 10.1149/1.2100612  0.381
1987 Wen DS, Smith PL, Osburn CM, Rozgonyi GA. Defect annihilation in shallow p+ junctions using titanium silicide Applied Physics Letters. 51: 1182-1184. DOI: 10.1063/1.98726  0.424
1987 Salih ASM, Radzimski Z, Honeycutt J, Rozgonyi GA, Bean KE, Lindberg K. Gated diode leakage and lifetime measurements of misfit dislocation gettered Si epitaxy Applied Physics Letters. 50: 1678-1680. DOI: 10.1063/1.97765  0.423
1987 Ozturk MC, Wortman JJ, Chu WK, Rozgonyi G, Griffis DP. BF2 ion implantation in silicon through surface oxides, behaviour of the fluorine with rapid thermal annealing Materials Letters. 5: 311-314. DOI: 10.1016/0167-577X(87)90118-2  0.376
1987 Rozgonyi GA, Salih ASM, Radzimski Z, Kola RR, Honeycutt J, Bean KE, Lindberg K. Defect engineering for VLSI epitaxial silicon Journal of Crystal Growth. 85: 300-307. DOI: 10.1016/0022-0248(87)90239-9  0.475
1986 Maszara WP, Rozgonyi GA, Simpson L, Wortman JJ. TEMPERATURE DEPENDENT AMORPHIZATION OF SILICON DURING SELF-IMPLANTATION Materials Research Society Symposia Proceedings. 51: 381-387. DOI: 10.1557/Proc-51-381  0.343
1986 Salih ASM, Ryu JS, Rozgonyi GA, Bean KE. “Extrinsic Gettering via Epitaxial Misfit Dislocations: Electrical Characterization“ [J. Electrochem. Soc., 133, 475 (1986)] Journal of the Electrochemical Society. 133: 1526. DOI: 10.1149/1.2152159  0.313
1986 Salih ASM, Bean KE, Ryu JS, Rozgonyi GA. Extrinsic Gettering via Epitaxial Misfit Dislocations: Electrical Characterization Journal of the Electrochemical Society. 133: 475-478. DOI: 10.1149/1.2108604  0.468
1986 Rozgonyi GA, Sadana DK. SEMICONDUCTOR MATERIALS DEFECT DIAGNOSTICS FOR SUBMICROMETER VERY LARGE SCALE INTEGRATION TECHNOLOGY Acs Symposium Series. 75-95.  0.349
1986 Rozgonyi GA, Myers E, Sadana DK. NOVEL CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN VERY LOW TEMPERATURE ANNEALED Ge** plus IMPLANTED Si: IMPLICATIONS FOR DEFECT-FREE SPE Proceedings - the Electrochemical Society. 86: 696-705.  0.354
1985 Myers E, Rozgonyi GA, Sadana DK, Maszara W, Wortman JJ, Narayan J. Ge+ Preamorphization of Si: Effects of Dose and Very Low Temperature Thermal Treatment on Extended Defect Formation During Subsequent Spe Mrs Proceedings. 52. DOI: 10.1557/Proc-52-107  0.414
1985 Salih ASM, Maszara W, Kim HJ, Rozgonyi GA. EXTRINSIC GETTERING WITH EPITAXIAL MISFIT DISLOCATIONS Materials Research Society Symposia Proceedings. 36: 61-67. DOI: 10.1557/Proc-36-61  0.464
1985 Salih AS, Kim HJ, Davis RF, Rozgonyi GA. Extrinsic gettering via the controlled introduction of misfit dislocations Applied Physics Letters. 46: 419-421. DOI: 10.1063/1.95598  0.439
1985 Sadana DK, Sands T, Maszara W, Rozgonyi GA. TRANSMISSION ELECTRON MICROSCOPY OF PREAMORPHIZED, SHALLOW IMPLANTED AND RAPID THERMALLY ANNEALED SILICON Institute of Physics Conference Series. 93-98.  0.346
1984 Maszara W, Sadana DK, Rozgonyi GA, Sands T, Washburn J, Wortman JJ. Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations Mrs Proceedings. 35. DOI: 10.1557/Proc-35-277  0.332
1984 Sadana DK, Maszara W, Chu WK, Wortmann JJ, Rozgonyi GA. An alternate pre-amorphization/rapid thermal annealing procedure for shallow junction formation Journal of the Electrochemical Society. 131: 943-945. DOI: 10.1149/1.2115733  0.347
1984 Sands T, Washburn J, Gronsky R, Maszara W, Sadana DK, Rozgonyi GA. Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted silicon Applied Physics Letters. 45: 982-984. DOI: 10.1063/1.95446  0.483
1984 Ozguz VH, Wortman JJ, Hauser JR, Simpson L, Littlejohn MA, Chu WK, Rozgonyi GA. Electrical properties of implanted and rapid thermal annealed shallow p+-n junctions Applied Physics Letters. 45: 1225-1226. DOI: 10.1063/1.95106  0.399
1984 Carter C, Maszara W, Sadana DK, Rozgonyi GA, Liu J, Wortman J. Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon Applied Physics Letters. 44: 459-461. DOI: 10.1063/1.94766  0.448
1984 Rozgonyi GA, Carter CH, Maszara W, Sadana DK. Characterization of shallow semiconductor interfaces Journal of Crystal Growth. 70: 574-581. DOI: 10.1016/0022-0248(84)90319-1  0.419
1984 Frederick RA, Rozgonyi GA. Orientation dependent variation in antimony segregation coefficient near the silicon (111) plane: An explanation using lateral microscopic growth LμG concepts Journal of Crystal Growth. 70: 335-340. DOI: 10.1016/0022-0248(84)90284-7  0.344
1984 Lee EH, Rozgonyi GA. Modes of growth stability breakdown in the seeded crystallization of microzone-melted silicon on insulator Journal of Crystal Growth. 70: 223-229. DOI: 10.1016/0022-0248(84)90270-7  0.328
1984 Sadana DK, Myers E, Liu J, Finstad T, Rozgonyi GA. GERMANIUM IMPLANTATION INTO SILICON: AN ALTERNATE PRE-AMORPHIZATION/RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION TECHNOLOGY Materials Research Society Symposia Proceedings. 23: 303-308.  0.331
1983 Maszara W, Carter C, Sadana DK, Liu J, Ozguz V, Wortman J, Rozgonyi GA. Influence of Rapid Thermal Annealing on Shallow BF 2 Implantation into Pre-Amorphized Silicon Mrs Proceedings. 23. DOI: 10.1557/Proc-23-285  0.467
1983 Narayan J, Holland DW, Eby R, Wortman JJ, Ozguz V, Rozgonyi GA. IIIB-9 Dopant Profile Control by Rapid Thermal Annealing in Boron and Arsenic Implanted Silicon Ieee Transactions On Electron Devices. 30: 1585. DOI: 10.1109/T-Ed.1983.21373  0.367
1983 Narayan J, Holland OW, Eby RE, Wortman JJ, Ozguz V, Rozgonyi GA. Rapid thermal annealing of arsenic and boron‐implanted silicon Applied Physics Letters. 43: 957-959. DOI: 10.1063/1.94200  0.397
1982 Robinson M, Chang CC, Marcus RB, Rozgonyi GA, Katz LE, Paulnack CL. Low Dislocation Density RF‐Heated Epitaxial Silicon Journal of the Electrochemical Society. 129: 2858-2860. DOI: 10.1149/1.2123693  0.406
1982 Bean JC, Rozgonyi GA. Patterned silicon molecular beam epitaxy with submicron lateral resolution Applied Physics Letters. 41: 752-755. DOI: 10.1063/1.93666  0.303
1982 Pearce CW, Rozgonyi GA. INTRINSIC GETTERING IN HEAVILY-DOPED SILICON WAFERS Electrochemical Society Extended Abstracts. 82: 228.  0.331
1981 Robinson M, Rozgonyi GA, Seidel TE, Read MH. Orientation and Implantation Effects on Stacking Faults during Silicon Buried Layer Processing Journal of the Electrochemical Society. 128: 926-929. DOI: 10.1149/1.2127535  0.305
1981 Baumgart H, Phillipp F, Rozgonyi GA, Gösele U. Slip dislocation formation during cw laser annealing of silicon Applied Physics Letters. 38: 95-97. DOI: 10.1063/1.92268  0.315
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