| Year |
Citation |
Score |
| 2014 |
Agrawal A, Lin J, Barth M, White R, Zheng B, Chopra S, Gupta S, Wang K, Gelatos J, Mohney SE, Datta S. Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts Applied Physics Letters. 104. DOI: 10.1063/1.4868302 |
0.481 |
|
| 2013 |
Kim SW, Byun DS, Jung M, Chopra S, Kim Y, Kim JH, Han SM, Ko DH, Lee HJ. Channel strain measurement of Si1-xCx structures: Effects of gate length, source/drain length, and source/drain elevation Applied Physics Express. 6. DOI: 10.7567/Apex.6.066601 |
0.386 |
|
| 2013 |
Ho B, Xu N, Wood B, Tran V, Chopra S, Kim Y, Nguyen B, Bonnin O, Mazure C, Kuppurao S, Chang C, Liu TK. Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence Ieee Transactions On Electron Devices. 60: 153-158. DOI: 10.1109/Ted.2012.2230175 |
0.515 |
|
| 2013 |
Chang H, Chopra S, Adams B, Li J, Sharma S, Kim Y, Moffatt S, Woo JCS. Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies Solid-State Electronics. 80: 59-62. DOI: 10.1016/J.Sse.2012.10.013 |
0.334 |
|
| 2012 |
Srinivasan VSS, Chopra S, Karkare P, Bafna P, Lashkare S, Kumbhare P, Kim Y, Srinivasan S, Kuppurao S, Lodha S, Ganguly U. Punchthrough-diode-based bipolar RRAM selector by Si epitaxy Ieee Electron Device Letters. 33: 1396-1398. DOI: 10.1109/Led.2012.2209394 |
0.445 |
|
| 2011 |
Thareja G, Chopra S, Adams B, Kim Y, Moffatt S, Saraswat K, Nishi Y. High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode Ieee Electron Device Letters. 32: 838-840. DOI: 10.1109/Led.2011.2142410 |
0.325 |
|
| 2009 |
Alptekin E, Ozturk MC, Misra V, Cho Y, Kim Y, Chopra S. Erbium Silicide Formation on Si[sub 1−x]C[sub x] Epitaxial Layers Journal of the Electrochemical Society. 156: H378. DOI: 10.1149/1.3097189 |
0.598 |
|
| 2007 |
Chopra S, Ozturk MC, Misra V, Ren Z, Mcneil LE. The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon Applied Physics Letters. 91. DOI: 10.1063/1.2795346 |
0.641 |
|
| 2007 |
Zhao W, Duscher G, Rozgonyi G, Zikry MA, Chopra S, Ozturk MC. Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures Applied Physics Letters. 90. DOI: 10.1063/1.2738188 |
0.433 |
|
| 2006 |
Chopra S, Ozturk MC, Misra V, McGuire K, McNeil L. Impact of heavy boron doping and nickel germanosilicide contacts on biaxial compressive strain in pseudomorphic silicon-germanium alloys on silicon Materials Research Society Symposium Proceedings. 913: 71-76. DOI: 10.1557/Proc-0913-D02-10 |
0.636 |
|
| 2006 |
Chopra S, Ozturk MC, Misra V, McGuire K, McNeil LE. Critical thickness of heavily boron-doped silicon-germanium alloys Applied Physics Letters. 89. DOI: 10.1063/1.2374870 |
0.626 |
|
| 2006 |
Chopra S, Ozturk MC, Misra V, McGuire K, McNeil LE. Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy Applied Physics Letters. 88. DOI: 10.1063/1.2205752 |
0.629 |
|
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