☰

Robert D. Armitage, Ph.D. - Publications

Affiliations: 
2003 University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C. Zincblende and wurtzite phases in InN epilayers and their respective band transitions Journal of Crystal Growth. 288: 225-229. DOI: 10.1016/J.Jcrysgro.2005.12.002  0.589
2005 Xu X, Specht P, Armitage R, Ho JC, Weber ER, Kisielowski C. Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy Applied Physics Letters. 87: 92102. DOI: 10.1063/1.2035330  0.549
2005 Xu X, Armitage R, Shinkai S, Sasaki K, Kisielowski C, Weber ER. Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer Applied Physics Letters. 86: 182104. DOI: 10.1063/1.1923192  0.593
2005 Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni R, Kisielowski C. Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy Solid State Communications. 135: 340-344. DOI: 10.1016/J.Ssc.2005.04.041  0.587
2004 Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853  0.507
2004 Armitage R, Yang Q, Feick H, Weber ER. Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN Journal of Crystal Growth. 263: 132-142. DOI: 10.1016/J.Jcrysgro.2003.11.091  0.55
2003 Armitage R, Yang Q, Weber ER. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire Mrs Internet Journal of Nitride Semiconductor Research. 8. DOI: 10.1557/S1092578300000491  0.592
2003 Armitage R, Hong W, Yang Q, Feick H, Gebauer J, Weber ER, Hautakangas S, Saarinen K. Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN Applied Physics Letters. 82: 3457-3459. DOI: 10.1063/1.1578169  0.675
2003 Yang Q, Feick H, Armitage R, Weber ER. Metastability in the excitonic luminescence of electron-irradiated GaN Physica Status Solidi (C). 2712-2715. DOI: 10.1002/Pssc.200303312  0.503
2002 Armitage R, Yang Q, Feick H, Tzeng SY, Lim J, Weber ER. Optical and electrical properties of semi-insulating GaN:C grown by MBE Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L10.7  0.482
2002 Armitage R, Yang Q, Feick H, Gebauer J, Weber ER, Shinkai S, Sasaki K. Lattice-matched HfN buffer layers for epitaxy of GaN on Si Applied Physics Letters. 81: 1450-1452. DOI: 10.1063/1.1501447  0.624
2001 Richardson TJ, Slack JL, Armitage RD, Kostecki R, Farangis B, Rubin MD. Switchable mirrors based on nickel–magnesium films Applied Physics Letters. 78: 3047-3049. DOI: 10.1063/1.1371959  0.345
2001 Kim Y, Shapiro NA, Feick H, Armitage R, Weber ER, Yang Y, Cerrina F. Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth Applied Physics Letters. 78: 895-897. DOI: 10.1063/1.1347016  0.677
2000 Kim Y, Subramanya SG, Krueger J, Siegle H, Shapiro N, Armitage R, Feick H, Weber ER, Kisielowski C, Yang Y, Cerrina F. Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T4.10.1  0.676
2000 Armitage R, Cich M, Rubin M, Weber ER. A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches Applied Physics A. 71: 647-650. DOI: 10.1007/S003390000582  0.668
Show low-probability matches.