Year |
Citation |
Score |
2006 |
Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C. Zincblende and wurtzite phases in InN epilayers and their respective band transitions Journal of Crystal Growth. 288: 225-229. DOI: 10.1016/J.Jcrysgro.2005.12.002 |
0.589 |
|
2005 |
Xu X, Specht P, Armitage R, Ho JC, Weber ER, Kisielowski C. Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy Applied Physics Letters. 87: 92102. DOI: 10.1063/1.2035330 |
0.549 |
|
2005 |
Xu X, Armitage R, Shinkai S, Sasaki K, Kisielowski C, Weber ER. Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer Applied Physics Letters. 86: 182104. DOI: 10.1063/1.1923192 |
0.593 |
|
2005 |
Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni R, Kisielowski C. Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy Solid State Communications. 135: 340-344. DOI: 10.1016/J.Ssc.2005.04.041 |
0.587 |
|
2004 |
Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853 |
0.507 |
|
2004 |
Armitage R, Yang Q, Feick H, Weber ER. Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN Journal of Crystal Growth. 263: 132-142. DOI: 10.1016/J.Jcrysgro.2003.11.091 |
0.55 |
|
2003 |
Armitage R, Yang Q, Weber ER. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire Mrs Internet Journal of Nitride Semiconductor Research. 8. DOI: 10.1557/S1092578300000491 |
0.592 |
|
2003 |
Armitage R, Hong W, Yang Q, Feick H, Gebauer J, Weber ER, Hautakangas S, Saarinen K. Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN Applied Physics Letters. 82: 3457-3459. DOI: 10.1063/1.1578169 |
0.675 |
|
2003 |
Yang Q, Feick H, Armitage R, Weber ER. Metastability in the excitonic luminescence of electron-irradiated GaN Physica Status Solidi (C). 2712-2715. DOI: 10.1002/Pssc.200303312 |
0.503 |
|
2002 |
Armitage R, Yang Q, Feick H, Tzeng SY, Lim J, Weber ER. Optical and electrical properties of semi-insulating GaN:C grown by MBE Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L10.7 |
0.482 |
|
2002 |
Armitage R, Yang Q, Feick H, Gebauer J, Weber ER, Shinkai S, Sasaki K. Lattice-matched HfN buffer layers for epitaxy of GaN on Si Applied Physics Letters. 81: 1450-1452. DOI: 10.1063/1.1501447 |
0.624 |
|
2001 |
Richardson TJ, Slack JL, Armitage RD, Kostecki R, Farangis B, Rubin MD. Switchable mirrors based on nickel–magnesium films Applied Physics Letters. 78: 3047-3049. DOI: 10.1063/1.1371959 |
0.345 |
|
2001 |
Kim Y, Shapiro NA, Feick H, Armitage R, Weber ER, Yang Y, Cerrina F. Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth Applied Physics Letters. 78: 895-897. DOI: 10.1063/1.1347016 |
0.677 |
|
2000 |
Kim Y, Subramanya SG, Krueger J, Siegle H, Shapiro N, Armitage R, Feick H, Weber ER, Kisielowski C, Yang Y, Cerrina F. Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T4.10.1 |
0.676 |
|
2000 |
Armitage R, Cich M, Rubin M, Weber ER. A method to pattern Pd over-layers on GdMg films and its application to increase the transmittance of metal hydride optical switches Applied Physics A. 71: 647-650. DOI: 10.1007/S003390000582 |
0.668 |
|
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