| Year |
Citation |
Score |
| 2019 |
Fuchs HD, Etchegoin P, Cardona M, Itoh K, Haller EE. Vibrational band modes in germanium: Isotopic disorder-induced Raman scattering. Physical Review Letters. 70: 1715-1718. PMID 10053366 DOI: 10.1103/Physrevlett.70.1715 |
0.515 |
|
| 2019 |
Yu KM, Cohen ML, Haller EE, Hansen WL, Liu AY, Wu IC. Observation of crystalline C3N4. Physical Review. B, Condensed Matter. 49: 5034-5037. PMID 10011441 DOI: 10.1103/Physrevb.49.5034 |
0.322 |
|
| 2019 |
Etchegoin P, Fuchs HD, Weber J, Cardona M, Pintschovius L, Pyka N, Itoh K, Haller EE. Phonons in isotopically disordered Ge. Physical Review. B, Condensed Matter. 48: 12661-12671. PMID 10007636 DOI: 10.1103/Physrevb.48.12661 |
0.339 |
|
| 2019 |
Fuchs HD, Grein CH, Thomsen C, Cardona M, Hansen WL, Haller EE, Itoh K. Comparison of the phonon spectra of 70Ge and natural Ge crystals: Effects of isotopic disorder. Physical Review. B, Condensed Matter. 43: 4835-4842. PMID 9997854 DOI: 10.1103/Physrevb.43.4835 |
0.531 |
|
| 2019 |
Labrie D, Booth IJ, Thewalt ML, Haller EE. Piezospectroscopy of the ground and excited states of zinc double acceptors in germanium. Physical Review. B, Condensed Matter. 38: 5504-5510. PMID 9946989 DOI: 10.1103/Physrevb.38.5504 |
0.305 |
|
| 2018 |
Noma Y, Kotegawa H, Kubo T, Tou H, Harima H, Haga Y, Yamamoto E, Ōnuki Y, Itoh KM, Haller EE, Nakamura A, Homma Y, Honda F, Aoki D. Anisotropic Magnetic Fluctuations in Ferromagnetic Superconductor UGe2: 73Ge-NQR Study at Ambient Pressure Journal of the Physical Society of Japan. 87: 33704-33704. DOI: 10.7566/Jpsj.87.033704 |
0.514 |
|
| 2018 |
Inyushkin AV, Taldenkov AN, Ager JW, Haller EE, Riemann H, Abrosimov NV, Pohl H, Becker P. Ultrahigh thermal conductivity of isotopically enriched silicon Journal of Applied Physics. 123: 95112-95112. DOI: 10.1063/1.5017778 |
0.307 |
|
| 2017 |
Noma Y, Kotegawa H, Kubo T, Tou H, Harima H, Haga Y, Yamamoto E, Ōnuki Y, Itoh KM, Haller EE, Nakamura A, Homma Y, Honda F, Aoki D. 73Ge-NMR study on magnetic fluctuations of ferromagnetic superconductor UGe2 Physica B-Condensed Matter. 536: 543-545. DOI: 10.1016/J.Physb.2017.10.023 |
0.504 |
|
| 2016 |
Hwang C, Cybart SA, Shin SJ, Kim S, Kim K, Rappoport TG, Wu SM, Jozwiak C, Fedorov AV, Mo SK, Lee DH, Min BI, Haller EE, Dynes RC, Castro Neto AH, et al. Magnetic effects in sulfur-decorated graphene. Scientific Reports. 6: 21460. PMID 26888720 DOI: 10.1038/Srep21460 |
0.688 |
|
| 2016 |
Sigillito AJ, Tyryshkin AM, Beeman JW, Haller EE, Itoh KM, Lyon SA. Large Stark tuning of donor electron spin qubits in germanium Physical Review B. 94. DOI: 10.1103/Physrevb.94.125204 |
0.513 |
|
| 2016 |
Issenmann D, Eon S, Bracht H, Hettich M, Dekorsy T, Buth G, Steininger R, Baumbach T, Lundsgaard Hansen J, Nylandsted Larsen A, Ager JW, Haller EE, Plech A. Ultrafast study of phonon transport in isotopically controlled semiconductor nanostructures Physica Status Solidi (a) Applications and Materials Science. 213: 541-548. DOI: 10.1002/Pssa.201532462 |
0.319 |
|
| 2015 |
Kotegawa H, Fukumoto K, Toyama T, Tou H, Harima H, Harada A, Kitaoka Y, Haga Y, Yamamoto E, Onuki Y, Itoh KM, Haller EE. 73Ge-nuclear magnetic resonance/nuclear quadrupole resonance investigation of magnetic properties of URhGe Journal of the Physical Society of Japan. 84. DOI: 10.7566/JPSJ.84.054710 |
0.429 |
|
| 2015 |
Sigillito AJ, Jock RM, Tyryshkin AM, Beeman JW, Haller EE, Itoh KM, Lyon SA. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium Physical Review Letters. 115. DOI: 10.1103/Physrevlett.115.247601 |
0.525 |
|
| 2014 |
Smith HM, Haegel NM, Phillips DJ, Cirignano L, Ciampi G, Kim H, Chrzan DC, Haller EE. Electrical and optical studies of deep levels in nominally undoped thallium bromide Ieee Transactions On Nuclear Science. 61: 689-694. DOI: 10.1109/Tns.2013.2291819 |
0.582 |
|
| 2014 |
Teklemichael ST, McCluskey MD, Buchowicz G, Dubon OD, Haller EE. Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.165204 |
0.787 |
|
| 2014 |
Sekiguchi T, Tyryshkin AM, Tojo S, Abe E, Mori R, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Ager JW, Haller EE, Thewalt MLW, Morton JJL, Lyon SA, Itoh KM. Host isotope mass effects on the hyperfine interaction of group-V donors in silicon Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.121203 |
0.475 |
|
| 2014 |
Kube R, Bracht H, Hüger E, Schmidt H, Hansen JL, Larsen AN, Ager JW, Haller EE, Geue T, Stahn J, Uematsu M, Itoh KM. Reply to Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.117202 |
0.486 |
|
| 2013 |
Schneider S, Bracht H, Klug JN, Hansen JL, Larsen AN, Bougeard D, Haller EE. Radiation-enhanced self- and boron diffusion in germanium Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.115202 |
0.306 |
|
| 2013 |
Mastandrea JP, Sherburne MP, Boswell-Koller CN, Sawyer CA, Guzman J, Bustillo KC, Ager JW, Haller EE, Chrzan DC. Self-consistent mean-field theory of size distribution narrowing during ramped temperature ion beam synthesis Journal of Applied Physics. 114. DOI: 10.1063/1.4846737 |
0.491 |
|
| 2013 |
Boswell-Koller CN, Shin SJ, Guzman J, Sherburne MP, Bustillo KC, Sawyer CA, Mastandrea JP, Beeman JW, Ager JW, Haller EE, Chrzan DC. Interfacial free energies determined from binary embedded alloy nanocluster geometry Apl Materials. 1. DOI: 10.1063/1.4828937 |
0.748 |
|
| 2013 |
Smith HM, Zhou Y, Ciampi G, Kim H, Cirignano LJ, Shah KS, Haller EE, Chrzan DC. First principles and experimental study of the electronic structure and phase stability of bulk thallium bromide Applied Physics Letters. 103. DOI: 10.1063/1.4819238 |
0.513 |
|
| 2013 |
Lieten RR, Seo JW, Decoster S, Vantomme A, Peters S, Bustillo KC, Haller EE, Menghini M, Locquet JP. Tensile strained GeSn on Si by solid phase epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4790302 |
0.342 |
|
| 2013 |
Shimizu Y, Takamizawa H, Kawamura Y, Uematsu M, Toyama T, Inoue K, Haller EE, Itoh KM, Nagai Y. Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography Journal of Applied Physics. 113. DOI: 10.1063/1.4773675 |
0.542 |
|
| 2012 |
Shambat G, Ellis B, Majumdar A, Petykiewicz J, Mayer M, Sarmiento T, Harris J, Haller E, Vuckovic J. Ultrafast directly modulated single-mode photonic crystal nanocavity light-emitting diode The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.A-5-1 |
0.562 |
|
| 2012 |
Shambat G, Ellis B, Mayer M, Majumdar A, Petykiewicz J, Sarmiento T, Harris J, Haller EE, Vuckovic J. Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators Proceedings of Spie - the International Society For Optical Engineering. 8277. DOI: 10.1117/12.907432 |
0.599 |
|
| 2012 |
Yu KM, Mayer MA, Speaks DT, He H, Zhao R, Hsu L, Mao SS, Haller EE, Walukiewicz W. Transparent conductors for full spectrum photovoltaics Conference Record of the Ieee Photovoltaic Specialists Conference. 2024-2029. DOI: 10.1109/PVSC.2012.6317996 |
0.602 |
|
| 2012 |
Shambat G, Ellis B, Petykiewicz J, Majumdar A, Mayer M, Sarmiento T, Harris J, Haller E, Vučković J. Electrically driven photonic crystal nanocavity devices Integrated Photonics Research, Silicon and Nanophotonics, Iprsn 2012. DOI: 10.1109/Jstqe.2012.2193666 |
0.579 |
|
| 2012 |
Vuckovic J, Shambat G, Petykiewicz J, Ellis B, Majumdar A, Sarmiento T, Mayer M, Harris J, Haller E. Photonic crystal nanocavity lasers and modulators 2012 Ieee Photonics Conference, Ipc 2012. 459-460. DOI: 10.1109/IPCon.2012.6358691 |
0.528 |
|
| 2012 |
Lieten RR, Bustillo K, Smets T, Simoen E, Ager JW, Haller EE, Locquet JP. Photoluminescence of bulk germanium Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.035204 |
0.37 |
|
| 2012 |
Yu KM, Mayer MA, Speaks DT, He H, Zhao R, Hsu L, Mao SS, Haller EE, Walukiewicz W. Ideal transparent conductors for full spectrum photovoltaics Journal of Applied Physics. 111. DOI: 10.1063/1.4729563 |
0.691 |
|
| 2012 |
Mayer MA, Yu KM, Haller EE, Walukiewicz W. Tuning structural, electrical, and optical properties of oxide alloys: ZnO 1-xSe x Journal of Applied Physics. 111. DOI: 10.1063/1.4724336 |
0.702 |
|
| 2012 |
Smith HM, Phillips DJ, Sharp ID, Beeman JW, Chrzan DC, Haegel NM, Haller EE, Ciampi G, Kim H, Shah KS. Electronic effects of Se and Pb dopants in TlBr Applied Physics Letters. 100. DOI: 10.1063/1.4712596 |
0.615 |
|
| 2012 |
Wild A, Kierig J, Sailer J, Ager JW, Haller EE, Abstreiter G, Ludwig S, Bougeard D. Few electron double quantum dot in an isotopically purified 28Si quantum well Applied Physics Letters. 100. DOI: 10.1063/1.3701588 |
0.316 |
|
| 2012 |
Mayer MA, Yu KM, Speaks DT, Denlinger JD, Reichertz LA, Beeman JW, Haller EE, Walukiewicz W. Band gap engineering of oxide photoelectrodes: Characterization of ZnO 1-xSe x Journal of Physical Chemistry C. 116: 15281-15289. DOI: 10.1021/Jp304481C |
0.701 |
|
| 2012 |
Chrzan DC, Shin SJ, Guzman J, Yuan CW, Liao CY, Stone PR, Boswell-Koller CN, Sawyer CA, Bustillo KC, Sherburne MP, Conry T, Lieten RR, Dubon OD, Minor AM, Watanabe M, ... ... Haller EE, et al. Embedded binary eutectic alloy nanostructures Jom. 64: 1158-1164. DOI: 10.1007/S11837-012-0439-5 |
0.566 |
|
| 2012 |
Vučković J, Ellis B, Shambat G, Petykiewicz J, Majumdar A, Sarmiento T, Mayer M, Harris J, Haller E. Ultra-low threshold and high speed electrically driven photonic crystal nanocavity lasers and LEDs 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.541 |
|
| 2011 |
Shambat G, Ellis B, Majumdar A, Petykiewicz J, Mayer MA, Sarmiento T, Harris J, Haller EE, Vučković J. Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode. Nature Communications. 2: 539. PMID 22086339 DOI: 10.1038/Ncomms1543 |
0.589 |
|
| 2011 |
Shambat G, Ellis B, Mayer MA, Majumdar A, Haller EE, Vučković J. Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator. Optics Express. 19: 7530-6. PMID 21503060 DOI: 10.1364/Oe.19.007530 |
0.585 |
|
| 2011 |
Haas AP, Eliason M, Mays VM, Mathy RM, Cochran SD, D'Augelli AR, Silverman MM, Fisher PW, Hughes T, Rosario M, Russell ST, Malley E, Reed J, Litts DA, Haller E, et al. Suicide and suicide risk in lesbian, gay, bisexual, and transgender populations: review and recommendations. Journal of Homosexuality. 58: 10-51. PMID 21213174 DOI: 10.1080/00918369.2011.534038 |
0.318 |
|
| 2011 |
Lieten RR, Ma QB, Guzman J, Ager JW, Haller EE, Locquet JP. Solid phase epitaxy of Germanium on Silicon substrates Materials Research Society Symposium Proceedings. 1339: 14-19. DOI: 10.1557/Opl.2011.862 |
0.536 |
|
| 2011 |
Ellis B, Shambat G, Mayer M, Petykiewicz J, Sarmiento T, Harris J, Haller E, Vuckovic J. Low power consumption electrically pumped photonic crystal membrane devices Proceedings of Spie - the International Society For Optical Engineering. 8095. DOI: 10.1117/12.894479 |
0.596 |
|
| 2011 |
Miller N, Haller EE, Koblmüller G, Gallinat C, Speck JS, Schaff WJ, Hawkridge ME, Yu KM, Ager JW. Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075315 |
0.324 |
|
| 2011 |
Mayer MA, Choi S, Bierwagen O, Smith HM, Haller EE, Speck JS, Walukiewicz W. Electrical and optical properties of p-type InN Journal of Applied Physics. 110. DOI: 10.1063/1.3670038 |
0.76 |
|
| 2011 |
Sawyer CA, Guzman J, Boswell-Koller CN, Sherburne MP, Mastandrea JP, Bustillo KC, Ager JW, Haller EE, Chrzan DC. Modeling pulsed-laser melting of embedded semiconductor nanoparticles Journal of Applied Physics. 110. DOI: 10.1063/1.3658265 |
0.509 |
|
| 2011 |
Bracht H, Radek M, Kube R, Knebel S, Posselt M, Schmidt B, Haller EE, Bougeard D. Ion-beam mixing in crystalline and amorphous germanium isotope multilayers Journal of Applied Physics. 110. DOI: 10.1063/1.3658259 |
0.328 |
|
| 2011 |
Alarcón-Lladó E, Mayer MA, Boudouris BW, Segalman RA, Miller N, Yamaguchi T, Wang K, Nanishi Y, Haller EE, Ager JW. PN junction rectification in electrolyte gated Mg-doped InN Applied Physics Letters. 99. DOI: 10.1063/1.3634049 |
0.549 |
|
| 2011 |
Shambat G, Ellis B, Petykiewicz J, Mayer MA, Sarmiento T, Harris J, Haller EE, Vukovi J. Nanobeam photonic crystal cavity light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3625432 |
0.608 |
|
| 2011 |
Kawamura Y, Uematsu M, Hoshi Y, Sawano K, Myronov M, Shiraki Y, Haller EE, Itoh KM. Self-diffusion in compressively strained Ge Journal of Applied Physics. 110: 34906. DOI: 10.1063/1.3608171 |
0.513 |
|
| 2011 |
Guzman J, Boswell-Koller CN, Beeman JW, Bustillo KC, Conry T, Dubón OD, Hansen WL, Levander AX, Liao CY, Lieten RR, Sawyer CA, Sherburne MP, Shin SJ, Stone PR, Watanabe M, ... ... Haller EE, et al. Reversible phase changes in Ge-Au nanoparticles Applied Physics Letters. 98. DOI: 10.1063/1.3584850 |
0.773 |
|
| 2011 |
Wang K, Miller N, Iwamoto R, Yamaguchi T, Mayer MA, Araki T, Nanishi Y, Yu KM, Haller EE, Walukiewicz W, Ager JW. Mg doped InN and confirmation of free holes in InN Applied Physics Letters. 98. DOI: 10.1063/1.3543625 |
0.553 |
|
| 2011 |
Ellis B, Mayer MA, Shambat G, Sarmiento T, Harris J, Haller EE, Vučković J. Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser Nature Photonics. 5: 297-300. DOI: 10.1038/Nphoton.2011.51 |
0.599 |
|
| 2011 |
Ellis B, Mayer MA, Shambat G, Sarmiento T, Harris J, Haller EE, Vučković J. Ultra-low threshold electrically pumped quantum dot photonic crystal nanocavity laser Optics Infobase Conference Papers. |
0.541 |
|
| 2010 |
Moutanabbir O, Miyamoto S, Haller EE, Itoh KM. Transport of deposited atoms throughout strain-mediated self-assembly. Physical Review Letters. 105: 026101. PMID 20867717 DOI: 10.1103/Physrevlett.105.026101 |
0.679 |
|
| 2010 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Boswell-Koller CN, Stone PR, Dubon OD, Minor AM, Watanabe M, Beeman JW, Yu KM, Ager JW, Chrzan DC, Haller EE. Embedded binary eutectic alloy nanostructures: a new class of phase change materials. Nano Letters. 10: 2794-8. PMID 20698591 DOI: 10.1021/Nl100670R |
0.767 |
|
| 2010 |
Qi Y, Liu X, Hendriksen BLM, Navarro V, Park JY, Ratera I, Klopp JM, Edder C, Himpsel FJ, Fréchet JMJ, Haller EE, Salmeron M. Influence of molecular ordering on electrical and friction properties of ω-(trans -4-stilbene)alkylthiol self-assembled monolayers on Au (111) Langmuir. 26: 16522-16528. PMID 20415505 DOI: 10.1021/La100837G |
0.438 |
|
| 2010 |
Chueh YL, Boswell CN, Yuan CW, Shin SJ, Takei K, Ho JC, Ko H, Fan Z, Haller EE, Chrzan DC, Javey A. Nanoscale structural engineering via phase segregation: Au-Ge system. Nano Letters. 10: 393-7. PMID 20050674 DOI: 10.1021/Nl902597M |
0.715 |
|
| 2010 |
Yuan CW, Yi DO, Sharp ID, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. My modeling nanocluster formation during ion beam synthesis Materials Research Society Symposium Proceedings. 1181: 87-92. DOI: 10.1557/Proc-1181-Dd04-02 |
0.76 |
|
| 2010 |
Kanetake F, Mukuda H, Kitaoka Y, Magishi KI, Sugawara H, Itoh KM, Haller EE. Superconducting characteristics of filled skutterudites LaPt 4Ge12 and PrPt4Ge12: 73Ge-NQR/NMR studies Journal of the Physical Society of Japan. 79. DOI: 10.1143/Jpsj.79.063702 |
0.531 |
|
| 2010 |
Rahman MR, Itahashi T, Vlasenko MP, Vlasenko LS, Haller EE, Itoh KM. Dynamic nuclear polarization of 29Si nuclei induced by Li and Li-O centers in silicon Japanese Journal of Applied Physics. 49: 1030011-1030015. DOI: 10.1143/Jjap.49.103001 |
0.539 |
|
| 2010 |
Kawamura Y, Shimizu Y, Oshikawa H, Uematsu M, Haller EE, Itoh KM. Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation Applied Physics Express. 3. DOI: 10.1143/Apex.3.071303 |
0.535 |
|
| 2010 |
Haller EE. Physics with isotopically controlled semiconductors Semiconductors. 44: 841-853. DOI: 10.1134/S106378261007002X |
0.302 |
|
| 2010 |
Mukuda H, Ohara T, Yashima M, Kitaoka Y, Settai R, Onuki Y, Itoh KM, Haller EE. Spin susceptibility of noncentrosymmetric heavy-fermion superconductor CeIrSi3 under pressure: Si29 knight-shift study on single crystal Physical Review Letters. 104. DOI: 10.1103/PhysRevLett.104.017002 |
0.448 |
|
| 2010 |
Abe E, Tyryshkin AM, Tojo S, Morton JJL, Witzel WM, Fujimoto A, Ager JW, Haller EE, Isoya J, Lyon SA, Thewalt MLW, Itoh KM. Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.121201 |
0.531 |
|
| 2010 |
Miyamoto S, Moutanabbir O, Ishikawa T, Eto M, Haller EE, Sawano K, Shiraki Y, Itoh KM. Excitonic Aharonov-Bohm effect in isotopically pure 70Ge/Si self-assembled type-II quantum dots Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.073306 |
0.685 |
|
| 2010 |
Mayer MA, Stone PR, Miller N, Smith HM, Dubon OD, Haller EE, Yu KM, Walukiewicz W, Liu X, Furdyna JK. Electronic structure of Ga1-x Mnx As analyzed according to hole-concentration-dependent measurements Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.045205 |
0.806 |
|
| 2010 |
Mayer MA, Speaks DT, Man Yu K, Mao SS, Haller EE, Walukiewicz W. Band structure engineering of ZnO1-xSex alloys Proceedings of Spie - the International Society For Optical Engineering. 7770. DOI: 10.1063/1.3464323 |
0.687 |
|
| 2010 |
Mayer MA, Speaks DT, Yu KM, Mao SS, Haller EE, Walukiewicz W. Band structure engineering of ZnO1-x Sex alloys Applied Physics Letters. 97. DOI: 10.1063/1.3464323 |
0.598 |
|
| 2010 |
Speaks DT, Mayer MA, Yu KM, Mao SS, Haller EE, Walukiewicz W. Fermi level stabilization energy in cadmium oxide Journal of Applied Physics. 107. DOI: 10.1063/1.3428444 |
0.7 |
|
| 2010 |
Miller N, Ager JW, Smith HM, Mayer MA, Yu KM, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Hole transport and photoluminescence in Mg-doped InN Journal of Applied Physics. 107. DOI: 10.1063/1.3427564 |
0.711 |
|
| 2010 |
Ellis B, Sarmiento T, Mayer M, Zhang B, Harris J, Haller E, Vuckovic J. Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction Applied Physics Letters. 96. DOI: 10.1063/1.3425663 |
0.606 |
|
| 2010 |
Lounis SD, Siegel DA, Broesler R, Hwang CG, Haller EE, Lanzara A. Resonant photoluminescent charging of epitaxial graphene Applied Physics Letters. 96. DOI: 10.1063/1.3396201 |
0.313 |
|
| 2010 |
Rahman MR, Valasenko MP, Vlasenko LS, Haller EE, Itoh KM. Splitting of electron paramagnetic resonance lines of lithiumoxygen centers in isotopically enriched 28Si single crystals Solid State Communications. 150: 2275-2277. DOI: 10.1016/J.Ssc.2010.09.026 |
0.533 |
|
| 2010 |
Kanetake F, Mukuda H, Kitaoka Y, Sugawara H, Magishi K, Itoh KM, Haller EE. Superconducting state of filled-skutterudite RPt4Ge12 (R = La, Pr): 73Ge-NQR studies Physica C: Superconductivity and Its Applications. 470: S703-S704. DOI: 10.1016/J.Physc.2009.11.127 |
0.522 |
|
| 2010 |
Ellis B, Sarmiento T, Mayer M, Stone P, Beeman J, Zhang B, Dubon O, Haller E, Yamamoto Y, Harris J, Vuckovic J. Electrically pumped photonic crystal nanocavities using a laterally doped p-i-n junction Optics Infobase Conference Papers. |
0.69 |
|
| 2009 |
Bracht H, Schneider S, Klug JN, Liao CY, Lundsgaard Hansen J, Haller EE, Nylandsted Larsen A, Bougeard D, Posselt M, Wündisch C. Interstitial-mediated diffusion in germanium under proton irradiation. Physical Review Letters. 103: 255501. PMID 20366261 DOI: 10.1103/Physrevlett.103.255501 |
0.553 |
|
| 2009 |
Yuan CW, Yi DO, Sharp ID, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. Theory of nanocluster size distributions from ion beam synthesis. Physical Review Letters. 102: 146101. PMID 19392456 DOI: 10.1103/Physrevlett.102.146101 |
0.77 |
|
| 2009 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Stone PR, Dubon OD, Minor AM, Watanabe M, Ager JW, Chrzan DC, Haller EE. Structural characterization of GeSn alloy nanocrystals embedded in SiO 2 Materials Research Society Symposium Proceedings. 1184: 157-161. DOI: 10.1557/Proc-1184-Hh04-08 |
0.796 |
|
| 2009 |
Uematsu M, Naganawa M, Shimizu Y, Itoh KM, Sawano K, Shiraki Y, Haller EE. Probing the behaviors of point defects in silicon and germanium using isotope superlattices Ecs Transactions. 25: 51-54. DOI: 10.1149/1.3204393 |
0.469 |
|
| 2009 |
Mukuda H, Nishide S, Harada A, Iwasaki K, Yogi M, Yashima M, Kitaoka Y, Tsujino M, Takeuchi T, Settai R, Onuki Y, Bauer E, Itoh KM, Haller EE. Multiband superconductivity in heavy fermion compound CePt 3Si without inversion symmetry: An NMR study on a high-quality single crystal Journal of the Physical Society of Japan. 78. DOI: 10.1143/Jpsj.78.014705 |
0.534 |
|
| 2009 |
Yang A, Steger M, Sekiguchi T, Karaiskaj D, Thewalt MLW, Cardona M, Itoh KM, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, ... ... Haller EE, et al. Single-frequency laser spectroscopy of the boron bound exciton in S 28 i Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.195203 |
0.485 |
|
| 2009 |
Yuan CW, Yi DO, Sharp ID, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. Size-distribution evolution of ion-beam-synthesized nanoclusters in silica Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.134121 |
0.775 |
|
| 2009 |
Steger M, Yang A, Thewalt MLW, Cardona M, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, Haller EE, et al. High-resolution absorption spectroscopy of the deep impurities S and Se in 28Si revealing the 77Se hyperfine splitting Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.115204 |
0.33 |
|
| 2009 |
Steger M, Yang A, Karaiskaj D, Thewalt MLW, Haller EE, Ager JW, Cardona M, Riemann H, Abrosimov NV, Gusev AV, Bulanov AD, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ. Shallow impurity absorption spectroscopy in isotopically enriched silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.205210 |
0.324 |
|
| 2009 |
Miyamoto S, Moutanabbir O, Haller EE, Itoh KM. Spatial correlation of self-assembled isotopically pure Ge/Si(001) nanoislands Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.165415 |
0.691 |
|
| 2009 |
Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Walukiewicz W, Lu H, Schaff WJ. Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/9/095406 |
0.67 |
|
| 2009 |
Yang A, Steger M, Thewalt MLW, Ladd TD, Itoh KM, Haller EE, Ager JW, Riemann H, Abrosimov NV, Becker P, Pohl HJ. Nuclear polarization of phosphorus donors in 28Si by selective optical pumping Aip Conference Proceedings. 1199: 375-376. DOI: 10.1063/1.3295458 |
0.439 |
|
| 2009 |
Guzman J, Shin SJ, Liao CY, Yuan CW, Stone PR, Dubón OD, Yu KM, Beeman JW, Watanabe M, Ager JW, Chrzan DC, Haller EE. Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters Applied Physics Letters. 95. DOI: 10.1063/1.3266846 |
0.79 |
|
| 2009 |
Broesler R, Haller EE, Walukiewicz W, Muranaka T, Matsumoto T, Nabetani Y. Temperature dependence of the band gap of ZnSe1-x Ox Applied Physics Letters. 95. DOI: 10.1063/1.3242026 |
0.48 |
|
| 2009 |
Yuan CW, Boswell CN, Shin SJ, Liao CY, Guzman J, Ager JW, Haller EE, Chrzan DC. Processing route for size distribution narrowing of ion beam synthesized nanoclusters Applied Physics Letters. 95. DOI: 10.1063/1.3211193 |
0.772 |
|
| 2009 |
Miller N, Ager JW, Jones RE, Smith HM, Mayer MA, Yu KM, Hawkridge ME, Liliental-Weber Z, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Electrical and electrothermal transport in InN: The roles of defects Physica B: Condensed Matter. 404: 4862-4865. DOI: 10.1016/J.Physb.2009.08.242 |
0.68 |
|
| 2009 |
Rahman MR, Vlasenko LS, Haller EE, Itoh KM. Electron paramagnetic resonance and dynamic nuclear polarization of 29Si nuclei in lithium-doped silicon Physica B: Condensed Matter. 404: 5060-5062. DOI: 10.1016/J.Physb.2009.08.224 |
0.537 |
|
| 2009 |
Kawamura Y, Shimizu Y, Oshikawa H, Uematsu M, Haller EE, Itoh KM. Quantitative evaluation of germanium displacement induced by arsenic implantation using germanium isotope superlattices Physica B: Condensed Matter. 404: 4546-4548. DOI: 10.1016/J.Physb.2009.08.107 |
0.536 |
|
| 2009 |
Pan H, Misra N, Ko SH, Grigoropoulos CP, Miller N, Haller EE, Dubon O. Melt-mediated coalescence of solution-deposited ZnO nanoparticles by excimer laser annealing for thin-film transistor fabrication Applied Physics a: Materials Science and Processing. 94: 111-115. DOI: 10.1007/S00339-008-4925-0 |
0.58 |
|
| 2009 |
Sailer J, Lang V, Abstreiter G, Tsuchiya G, Itoh KM, Ager JW, Haller EE, Kupidura D, Harbusch D, Ludwig S, Bougeard D. A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure Physica Status Solidi - Rapid Research Letters. 3: 61-63. DOI: 10.1002/Pssr.200802275 |
0.529 |
|
| 2008 |
Hickey DP, Bryan ZL, Jones KS, Elliman RG, Haller EE. Defects in Ge and Si caused by 1 MeV Si[sup +] implantation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 425. DOI: 10.1116/1.2834557 |
0.312 |
|
| 2008 |
Yi DO, Jhon MH, Sharp ID, Xu Q, Yuan CW, Liao CY, Ager JW, Haller EE, Chrzan DC. Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulations and rate theory Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.245415 |
0.529 |
|
| 2008 |
Brotzmann S, Bracht H, Hansen JL, Larsen AN, Simoen E, Haller EE, Christensen JS, Werner P. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.235207 |
0.31 |
|
| 2008 |
Yang A, Steger M, Lian HJ, Thewalt MLW, Uemura M, Sagara A, Itoh KM, Haller EE, Ager JW, Lyon SA, Konuma M, Cardona M. High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.113203 |
0.472 |
|
| 2008 |
Kanetake F, Harada A, Rachi T, Nagara H, Mukuda H, Kusakabe K, Kitaoka Y, Suzuki N, Tanigaki K, Itoh K, Haller EE. 73Ge-NMR study and ab initio calculations on clathrate compound Ba24Ge100 Journal of Physics: Conference Series. 121. DOI: 10.1088/1742-6596/121/5/052011 |
0.404 |
|
| 2008 |
Yuan CW, Shin SJ, Liao CY, Guzman J, Stone PR, Watanabe M, Ager JW, Haller EE, Chrzan DC. Structure map for embedded binary alloy nanocrystals Applied Physics Letters. 93. DOI: 10.1063/1.3027066 |
0.774 |
|
| 2008 |
Naganawa M, Shimizu Y, Uematsu M, Itoh KM, Sawano K, Shiraki Y, Haller EE. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion Applied Physics Letters. 93: 191905. DOI: 10.1063/1.3025892 |
0.523 |
|
| 2008 |
Scarpulla MA, Stone PR, Sharp ID, Haller EE, Dubon OD, Beeman JW, Yu KM. Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2940361 |
0.744 |
|
| 2008 |
Harada A, Mukuda H, Kitaoka Y, Thamizhavel A, Okuda Y, Settai R, Ōnuki Y, Itoh KM, Haller EE, Harima H. Intimate interplay between superconductivity and antiferromagnetism in CeNiGe3:A 73Ge-NQR study under pressure Physica B-Condensed Matter. 403: 1020-1022. DOI: 10.1016/J.Physb.2007.10.080 |
0.496 |
|
| 2008 |
Kube R, Bracht H, Lundsgaard Hansen J, Nylandsted Larsen A, Haller E, Paul S, Lerch W. Simultaneous diffusion of Si and Ge in isotopically controlled heterostructures Materials Science in Semiconductor Processing. 11: 378-383. DOI: 10.1016/J.Mssp.2008.07.005 |
0.32 |
|
| 2008 |
Miller N, Jones RE, Yu KM, Ager JW, Liliental-Weber Z, Haller EE, Walukiewicz W, Williamson TL, Hoffbauer MA. Low-temperature grown compositionally graded InGaN films Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1866-1869. DOI: 10.1002/Pssc.200778719 |
0.526 |
|
| 2007 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, Ager JW, Chrzan DC, Haller EE. Xu et al. Reply Physical Review Letters. 99. DOI: 10.1103/Physrevlett.99.079602 |
0.429 |
|
| 2007 |
Harada A, Kawasaki S, Mukuda H, Kitaoka Y, Haga Y, Yamamoto E, Ōnuki Y, Itoh KM, Haller EE, Harima H. Experimental evidence for ferromagnetic spin-pairing superconductivity emerging inUGe2: AGe73-nuclear-quadrupole-resonance study under pressure Physical Review B. 75. DOI: 10.1103/Physrevb.75.140502 |
0.512 |
|
| 2007 |
Bracht H, Silvestri HH, Sharp ID, Haller EE. Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.035211 |
0.771 |
|
| 2007 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, III JWA, Chrzan DC, Haller EE. Superheating and supercooling of Ge nanocrystals embedded in SiO 2 Journal of Physics: Conference Series. 61: 1042-1046. DOI: 10.1088/1742-6596/61/1/206 |
0.543 |
|
| 2007 |
Yu KM, Walukiewicz W, Farshchi R, Dubon OD, Ager JW, Sharp ID, Haller EE. Synthesis and optical properties of multiband III-V semiconductor alloys Aip Conference Proceedings. 893: 1477-1478. DOI: 10.1063/1.2730465 |
0.804 |
|
| 2007 |
Stone PR, Scarpulla MA, Farshchi R, Sharp ID, Beeman JW, Yu KM, Arenholz E, Denlinger J, Haller EE, Dubon OD. Mn L3,2 X-ray absorption spectroscopy and magnetic circular dichroism in ferromagnetic Ga1-xMnxP Aip Conference Proceedings. 893: 1177-1178. DOI: 10.1063/1.2730317 |
0.784 |
|
| 2007 |
Thewalt MLW, Yang A, Steger M, Karaiskaj D, Cardona M, Riemann H, Abrosimov NV, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, Haller EE, et al. Direct observation of the donor nuclear spin in a near-gap bound exciton transition: 31P in highly enriched 28Si Journal of Applied Physics. 101. DOI: 10.1063/1.2723181 |
0.547 |
|
| 2007 |
Jones R, Li S, Haller E, Genuchten vHE, Yu K, Ager J, Liliental-Weber Z, Walukiewicz W, Lu HH, Schaff W. High Electron Mobility InN Applied Physics Letters. 90: 162103. DOI: 10.1063/1.2722693 |
0.559 |
|
| 2007 |
Hickey DP, Bryan ZL, Jones KS, Elliman RG, Haller EE. Regrowth-related defect formation and evolution in 1MeV amorphized (001) Ge Applied Physics Letters. 90: 132114. DOI: 10.1063/1.2717538 |
0.308 |
|
| 2007 |
Liliental-Weber Z, Jones R, Genuchten vHE, Yu K, Walukiewicz W, Ager J, Haller E, Lu HH, Schaff W. TEM studies of as-grown, irradiated and annealed InN films Physica B-Condensed Matter. 401: 646-649. DOI: 10.1016/J.Physb.2007.09.042 |
0.511 |
|
| 2007 |
Steger M, Yang A, Thewalt MLW, Cardona M, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, Ager JW, ... Haller EE, et al. Impurity absorption spectroscopy of the deep double donor sulfur in isotopically enriched silicon Physica B: Condensed Matter. 401: 600-603. DOI: 10.1016/J.Physb.2007.09.031 |
0.35 |
|
| 2007 |
Yang A, Steger M, Thewalt MLW, Cardona M, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, Ager JW, ... Haller EE, et al. High resolution photoluminescence of sulphur- and copper-related isoelectronic bound excitons in highly enriched 28Si Physica B: Condensed Matter. 401: 593-596. DOI: 10.1016/J.Physb.2007.09.029 |
0.303 |
|
| 2007 |
Thewalt MLW, Steger M, Yang A, Stavrias N, Cardona M, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kovalev ID, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, ... ... Haller EE, et al. Can highly enriched 28Si reveal new things about old defects? Physica B: Condensed Matter. 401: 587-592. DOI: 10.1016/J.Physb.2007.09.028 |
0.34 |
|
| 2007 |
Harada A, Kawasaki S, Mukuda H, Kitaoka Y, Thamizhavel A, Okuda Y, Settai R, Ōnuki Y, Itoh KM, Haller EE, Harima H. Pressure-induced antiferromagnetic superconductivity in CeNiGe3 : A 73Ge-NQR study under pressure Journal of Magnetism and Magnetic Materials. 310: 614-616. DOI: 10.1016/J.Jmmm.2006.10.883 |
0.517 |
|
| 2007 |
Kawasaki S, Sada T, Miyoshi T, Kotegawa H, Mukuda H, Kitaoka Y, Kobayashi T, Fukuhara T, Maezawa K, Itoh KM, Haller EE. 73Ge-NQR study of heavy-fermion compound CeNi2Ge2 Journal of Magnetism and Magnetic Materials. 310: 590-592. DOI: 10.1016/J.Jmmm.2006.10.232 |
0.511 |
|
| 2007 |
Beeman JW, Goyal S, Reichertz LA, Haller EE. Ion-implanted Ge:B far-infrared blocked-impurity-band detectors Infrared Physics & Technology. 51: 60-65. DOI: 10.1016/J.Infrared.2006.12.001 |
0.581 |
|
| 2007 |
Farshchi R, Chopdekar RV, Suzuki Y, Ashby PD, Sharp D, Beeman JW, Haller EE, Dubon OD. 2D-patterned ferromagnetic III-Mn-V semiconductors for planar spintronics Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1755-1758. DOI: 10.1002/Pssc.200674285 |
0.777 |
|
| 2007 |
Ager JW, Jones RE, Yamaguchi DM, Yu KM, Walukiewicz W, Li SX, Haller EE, Lu H, Schaff WJ. p-type InN and In-rich InGaN Physica Status Solidi (B). 244: 1820-1824. DOI: 10.1002/Pssb.200674762 |
0.639 |
|
| 2006 |
Yang A, Steger M, Karaiskaj D, Thewalt ML, Cardona M, Itoh KM, Riemann H, Abrosimov NV, Churbanov MF, Gusev AV, Bulanov AD, Kaliteevskii AK, Godisov ON, Becker P, Pohl HJ, ... ... Haller EE, et al. Optical detection and ionization of donors in specific electronic and nuclear spin States. Physical Review Letters. 97: 227401. PMID 17155840 DOI: 10.1103/Physrevlett.97.227401 |
0.528 |
|
| 2006 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, Ager JW, Chrzan DC, Haller EE. Large melting-point hysteresis of Ge nanocrystals embedded in SiO2. Physical Review Letters. 97: 155701. PMID 17155336 DOI: 10.1103/Physrevlett.97.155701 |
0.52 |
|
| 2006 |
Jones RE, Yu KM, Li SX, Walukiewicz W, Ager JW, Haller EE, Lu H, Schaff WJ. Evidence for p-type doping of InN. Physical Review Letters. 96: 125505. PMID 16605926 DOI: 10.1103/Physrevlett.96.125505 |
0.641 |
|
| 2006 |
Rauls E, Gerstmann U, Greulich-Weber S, Semmelroth K, Pensl G, Haller EE. New Aspects in n-type Doping of SiC with Phosphorus Materials Science Forum. 609-612. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.609 |
0.351 |
|
| 2006 |
Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann PJ, Haller EE, Ager JW, Starke U. Electronic Raman Studies of Shallow Donors in Silicon Carbide Materials Science Forum. 579-584. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.579 |
0.335 |
|
| 2006 |
Reichertz LA, Beeman JW, Cardozo BL, Jakob G, Katterloher R, Haegel NM, Haller EE. Development of a GaAs based BIB detector for sub-mm wavelengths Proceedings of Spie - the International Society For Optical Engineering. 6275. DOI: 10.1117/12.673039 |
0.703 |
|
| 2006 |
Xu Q, Sharp ID, Yuan CW, Yi DO, Liao CY, Glaeser AM, Minor AM, Beeman JW, Ridgway MC, Kluth P, Ager JW, Chrzan DC, Haller EE. Publisher’s Note: Large Melting-Point Hysteresis of Ge Nanocrystals Embedded inSiO2[Phys. Rev. Lett.97, 155701 (2006)] Physical Review Letters. 97. DOI: 10.1103/Physrevlett.97.209902 |
0.502 |
|
| 2006 |
Silvestri HH, Bracht H, Hansen JL, Larsen AN, Haller EE. Diffusion of silicon in crystalline germanium Semiconductor Science and Technology. 21: 758-762. DOI: 10.1088/0268-1242/21/6/008 |
0.774 |
|
| 2006 |
Sharp ID, Xu Q, Yi DO, Yuan CW, Beeman JW, Yu KM, Ager JW, Chrzan DC, Haller EE. Structural properties of Ge nanocrystals embedded in sapphire Journal of Applied Physics. 100: 114317. DOI: 10.1063/1.2398727 |
0.348 |
|
| 2006 |
Li SX, Jones RE, Haller EE, Yu KM, Walukiewicz W, Ager JW, Liliental-Weber Z, Lu H, Schaff WJ. Photoluminescence of energetic particle-irradiated InxGa1−xN alloys Applied Physics Letters. 88: 151101. DOI: 10.1063/1.2193799 |
0.448 |
|
| 2006 |
Yu KM, Walukiewicz W, Ager JW, Bour D, Farshchi R, Dubon OD, Li SX, Sharp ID, Haller EE. Multiband GaNAsP quaternary alloys Applied Physics Letters. 88. DOI: 10.1063/1.2181627 |
0.803 |
|
| 2006 |
Farshchi R, Scarpulla MA, Stone PR, Yu KM, Sharp ID, Beeman JW, Silvestri HH, Reichertz LA, Haller EE, Dubon OD. Compositional tuning of ferromagnetism in Ga1-xMnxP Solid State Communications. 140: 443-446. DOI: 10.1016/J.Ssc.2006.09.010 |
0.789 |
|
| 2006 |
Harada A, Kawasaki S, Mukuda H, Kitaoka Y, Haga Y, Yamamoto E, Onuki Y, Itoh KM, Haller EE, Harima H. Unconventional superconductivity in the itinerant ferromagnet UGe2:73Ge-NQR study under pressure Physica B-Condensed Matter. 378: 963-964. DOI: 10.1016/J.Physb.2006.01.368 |
0.523 |
|
| 2006 |
Liliental-Weber Z, Zakharov DN, Yu KM, Ager JW, Walukiewicz W, Haller EE, Lu H, Schaff WJ. Compositional modulation in InxGa1-xNInxGa1-xN Physica B-Condensed Matter. 376: 468-472. DOI: 10.1016/J.Physb.2005.12.120 |
0.506 |
|
| 2006 |
Jones RE, Li SX, Hsu L, Yu KM, Walukiewicz W, Liliental-Weber Z, Ager JW, Haller EE, Lu H, Schaff WJ. Native-defect-controlled n-type conductivity in InN Physica B-Condensed Matter. 376: 436-439. DOI: 10.1016/J.Physb.2005.12.112 |
0.651 |
|
| 2006 |
Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Native defects in InxGa1−xN alloys Physica B-Condensed Matter. 376: 432-435. DOI: 10.1016/J.Physb.2005.12.111 |
0.727 |
|
| 2006 |
Yang A, Lian HJ, Thewalt MLW, Uemura M, Sagara A, Itoh KM, Haller EE, Ager JW, Lyon SA. Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions Physica B: Condensed Matter. 376: 54-56. DOI: 10.1016/J.Physb.2005.12.015 |
0.549 |
|
| 2006 |
Haller E. Germanium: From its discovery to SiGe devices Materials Science in Semiconductor Processing. 9: 408-422. DOI: 10.1016/J.Mssp.2006.08.063 |
0.335 |
|
| 2006 |
Walukiewicz W, Jones R, Li S, Yu K, Ager J, Haller E, Lu H, Schaff W. Dopants and defects in InN and InGaN alloys Journal of Crystal Growth. 288: 278-282. DOI: 10.1016/J.Jcrysgro.2005.12.082 |
0.675 |
|
| 2005 |
Liliental-Weber Z, Zakharov DN, Yu KM, Ager JW, Walukiewicz W, Haller EE, Lu H, Schaff WJ. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies. Journal of Electron Microscopy. 54: 243-50. PMID 16123056 DOI: 10.1093/Jmicro/Dfi033 |
0.766 |
|
| 2005 |
Li S, Yu K, Jones R, Wu J, Walukiewicz W, Ager J, Shan W, Haller E, Lu H, Schaff WJ, Kemp W. Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN Mrs Proceedings. 864. DOI: 10.1557/Proc-864-E7.10 |
0.636 |
|
| 2005 |
Sharp ID, Xu Q, Yi DO, Liao CY, Ager III JW, Beeman JW, Yu KM, Robinson JT, Dubon OD, Chrzan DC, Haller EE. A Chemical Approach to 3-D Lithographic Patterning of Si and Ge Nanocrystals Mrs Proceedings. 901. DOI: 10.1557/PROC-0901-Rb09-03 |
0.538 |
|
| 2005 |
Jones RE, van Genuchten HCM, Li SX, Hsu L, Yu KM, Walukiewicz W, Ager III JW, Haller EE, Lu H, Schaff WJ. Electron Transport Properties of InN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff06-06 |
0.657 |
|
| 2005 |
Ager JW, Beeman JW, Hansen WL, Haller EE, Sharp ID, Liao C, Yang A, Thewalt MLW, Riemann H. High-purity, isotopically enriched bulk silicon Journal of the Electrochemical Society. 152: G448-G451. DOI: 10.1149/1.1901674 |
0.562 |
|
| 2005 |
Kotegawa H, Harada A, Kawasaki S, Kawasaki Y, Kitaoka Y, Haga Y, Yamamoto E, Onuki Y, Itoh KM, Haller EE, Harima H. Evidence for Uniform Coexistence of Ferromagnetism and Unconventional Superconductivity in UGe2: A 73Ge-NQR Study under Pressure Journal of the Physical Society of Japan. 74: 705-711. DOI: 10.1143/Jpsj.74.705 |
0.523 |
|
| 2005 |
Harada A, Kawasaki S, Kotegawa H, Kitaoka Y, Haga Y, Yamamoto E, Onuki Y, Itoh KM, Haller EE, Harima H. Cooperative phenomenon of ferromagnetism and unconventional superconductivity in UGe2: A 73Ge-NQR study under pressure Journal of the Physical Society of Japan. 74: 2675-2678. DOI: 10.1143/Jpsj.74.2675 |
0.509 |
|
| 2005 |
Reichertz LA, Cardozo BL, Beeman JW, Larsen DI, Tschanz S, Jakob G, Katterloher R, Haegel NM, Haller EE. First results on GaAs Blocked Impurity Band (BIB) structures for far-infrared detector arrays Proceedings of Spie - the International Society For Optical Engineering. 5883: 1-8. DOI: 10.1117/12.620156 |
0.696 |
|
| 2005 |
Tsoi S, Alawadhi H, Lu X, Ager JW, Liao CY, Riemann H, Haller EE, Rodriguez S, Ramdas AK. Erratum: Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon [Phys. Rev. B70, 193201 (2004)] Physical Review B. 72. DOI: 10.1103/Physrevb.72.249905 |
0.532 |
|
| 2005 |
Ager JW, Walukiewicz W, Shan W, Yu KM, Li SX, Haller EE, Lu H, Schaff WJ. Multiphonon resonance Raman scattering inInxGa1−xN Physical Review B. 72. DOI: 10.1103/Physrevb.72.155204 |
0.529 |
|
| 2005 |
Tsoi S, Rodriguez S, Ramdas AK, Ager JW, Riemann H, Haller EE. Isotopic dependence of the E0′ and E1 direct gaps in the electronic band structure of Si Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.153203 |
0.342 |
|
| 2005 |
Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Fermi-level stabilization energy in group III nitrides Physical Review B. 71. DOI: 10.1103/Physrevb.71.161201 |
0.723 |
|
| 2005 |
Kitaoka Y, Kotegawa H, Harada A, Kawasaki S, Kawasaki Y, Haga Y, Yamamoto E, Ōnuki Y, Itoh KM, Haller EE, Harima H. Novel phase diagram of superconductivity and ferromagnetism in UGe2: a73Ge-NQR study under high pressure Journal of Physics: Condensed Matter. 17: S975-S986. DOI: 10.1088/0953-8984/17/11/030 |
0.519 |
|
| 2005 |
Li SX, Haller EE, Yu KM, Walukiewicz W, Ager JW, Wu J, Shan W, Lu H, Schaff WJ. Effect of native defects on optical properties of InxGa1−xN alloys Applied Physics Letters. 87: 161905. DOI: 10.1063/1.2108118 |
0.713 |
|
| 2005 |
Sharp ID, Xu Q, Yi DO, Liao CY, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov DN, Ager JW, Chrzan DC, Haller EE. In situ characterization of Ge nanocrystals near the growth temperature Aip Conference Proceedings. 772: 611-612. DOI: 10.1063/1.1994255 |
0.549 |
|
| 2005 |
Silvestri HH, Bracht H, Hansen JL, Larsen AN, Haller EE. Diffusion of silicon in germanium Aip Conference Proceedings. 772: 97-98. DOI: 10.1063/1.1994011 |
0.763 |
|
| 2005 |
Tsoi S, Alawadhi H, Lu X, Ager JW, Liao CY, Riemann H, Haller EE, Rodriguez S, Ramdas AK. Isotopic effects in the indirect excitonic transitions of isotopically enriched silicon Aip Conference Proceedings. 772: 73-74. DOI: 10.1063/1.1994000 |
0.508 |
|
| 2005 |
Sharp ID, Xu Q, Liao CY, Yi DO, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov DN, Ager JW, Chrzan DC, Haller EE. Stable, freestanding Ge nanocrystals Journal of Applied Physics. 97. DOI: 10.1063/1.1942629 |
0.54 |
|
| 2005 |
Bergner A, Heugen U, Bründermann E, Schwaab G, Havenith M, Chamberlin DR, Haller EE. New p-Ge THz laser spectrometer for the study of solutions: THz absorption spectroscopy of water Review of Scientific Instruments. 76. DOI: 10.1063/1.1928427 |
0.687 |
|
| 2005 |
Yu KM, Liliental-Weber Z, Walukiewicz W, Shan W, Ager JW, Li SX, Jones RE, Haller EE, Lu H, Schaff WJ. On the crystalline structure, stoichiometry and band gap of InN thin films Applied Physics Letters. 86: 71910. DOI: 10.1063/1.1861513 |
0.563 |
|
| 2005 |
Bracht H, Staskunaite R, Haller EE, Fielitz P, Borchardt G, Grambole D. Silicon diffusion in sol–gel derived isotopically enriched silica glasses Journal of Applied Physics. 97: 046107. DOI: 10.1063/1.1857051 |
0.3 |
|
| 2005 |
Sharp ID, Yi DO, Xu Q, Liao CY, Beeman JW, Liliental-Weber Z, Yu KM, Zakharov DN, Ager JW, Chrzan DC, Haller EE. Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2 Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1856132 |
0.512 |
|
| 2005 |
Ramdas AK, Rodriguez S, Tsoi S, Haller EE. Electronic band gaps of semiconductors as influenced by their isotopic composition Solid State Communications. 133: 709-714. DOI: 10.1016/J.Ssc.2004.12.038 |
0.353 |
|
| 2005 |
Bracht HA, Silvestri HH, Haller EE. Advanced diffusion studies with isotopically controlled materials Solid State Communications. 133: 727-735. DOI: 10.1016/J.Ssc.2004.12.024 |
0.761 |
|
| 2005 |
Harada A, Kotegawa H, Kawasaki Y, Zheng GQ, Kitaoka Y, Yamamoto E, Haga Y, Onuki Y, Itoh KM, Haller EE. Evidence for the microscopic coexistence of superconductivity and ferromagnetism in UGe2: 73Ge-NMR/NQR study Physica B-Condensed Matter. 359: 1057-1059. DOI: 10.1016/J.Physb.2005.01.283 |
0.513 |
|
| 2005 |
Silver E, Austin G, Beeman J, Goulding F, Haller E, Landis D, Madden N. An NTD germanium-based microcalorimeter with 3.1eV energy resolution at 6keV Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 545: 683-689. DOI: 10.1016/J.Nima.2005.02.024 |
0.315 |
|
| 2005 |
Cardozo BL, Reichertz LA, Beeman JW, Haller EE. Characterization of liquid phase epitaxial GaAs for blocked-impurity-band far-infrared detectors Infrared Physics and Technology. 46: 400-407. DOI: 10.1016/J.Infrared.2004.07.002 |
0.708 |
|
| 2004 |
Liliental-Weber Z, Zakharov DN, Yu KM, Wu J, Li SX, Ager J, Walukiewicz W, Haller E, Lu H, Schaff WJ. Compositional Ordering in InxGa1-xN and its influence on optical properties Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.19 |
0.465 |
|
| 2004 |
Sharp I, Xu Q, Liao C, Yi D, Ager J, Beeman J, Yu K, Zakharov D, Liliental-Weber Z, Chrzan DC, Haller E. Characterization and Manipulation of Exposed Ge Nanocrystals Mrs Proceedings. 818. DOI: 10.1557/Proc-818-M13.3.1 |
0.334 |
|
| 2004 |
Silvestri HH, Bracht HA, Sharp ID, Hansen J, Nylandsted-Larsen A, Haller EE. Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic, Isotopically Controlled Silicon Heterostructures Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C3.3 |
0.325 |
|
| 2004 |
Reichertz LA, Beeman JW, Cardozo BL, Haegel NM, Haller EE, Jakob G, Katterloher R. GaAs BIB photodetector development for far-infrared astronomy Proceedings of Spie - the International Society For Optical Engineering. 5543: 231-238. DOI: 10.1117/12.560291 |
0.675 |
|
| 2004 |
Rieke GH, Young ET, Cadien J, Engelbracht CW, Gordon KD, Kelly DM, Low FJ, Misselt KA, Morrison JE, Muzerolle J, Rivlis G, Stansberry JA, Beeman JW, Haller EE, Frayer DT, et al. On orbit performance of the MIPS instrument Proceedings of Spie - the International Society For Optical Engineering. 5487: 50-61. DOI: 10.1117/12.551965 |
0.512 |
|
| 2004 |
Raab W, Poglitsch A, Looney LW, Klein R, Geis N, Hoenle R, Viehhauser W, Genzel R, Hamidouche M, Henning T, Haller EE. FIFI LS: The far-infrared integral field spectrometer for SOFIA Proceedings of Spie - the International Society For Optical Engineering. 5492: 1074-1085. DOI: 10.1117/12.550435 |
0.302 |
|
| 2004 |
Shan W, Walukiewicz W, Yu KM, Ager JW, Wu J, Beeman J, Scapulla MA, Dubon OD, Haller EE, Nabetani Y, Becla P. Effect of oxygen on the electronic band structure of II-O-VI alloys Proceedings of Spie - the International Society For Optical Engineering. 5349: 426-434. DOI: 10.1117/12.529297 |
0.721 |
|
| 2004 |
Wu J, Walukiewicz W, Shan W, Bourret-Courchesne E, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Structure-dependent hydrostatic deformation potentials of individual single-walled carbon nanotubes Physical Review Letters. 93: 017404-1. DOI: 10.1103/Physrevlett.93.017404 |
0.619 |
|
| 2004 |
Tsoi S, Alawadhi H, Lu X, Ager JW, Liao CY, Riemann H, Haller EE, Rodriguez S, Ramdas AK. Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon Physical Review B - Condensed Matter and Materials Physics. 70: 1-4. DOI: 10.1103/Physrevb.70.193201 |
0.59 |
|
| 2004 |
Shan W, Yu KM, Walukiewicz W, Wu J, Ager JW, Haller EE. Band anticrossing in dilute nitrides Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/024 |
0.668 |
|
| 2004 |
Rieke GH, Young ET, Engelbracht CW, Keely DM, Low FJ, Haller EE, Beeman JW, Gordon KD, Stansberry JA, Misselt KA, Cadien J, Morrison JE, Rivlis G, Latter WB, Noriega-Crespo A, et al. The Multiband Imaging Photometer for Spitzer (MIPS) Astrophysical Journal, Supplement Series. 154: 25-29. DOI: 10.1086/422717 |
0.497 |
|
| 2004 |
Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853 |
0.656 |
|
| 2004 |
Shan W, Yu KM, Walukiewicz W, Beeman JW, Wu J, Ager JW, Scarpulla MA, Dubon OD, Haller EE. Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys Applied Physics Letters. 84: 924-926. DOI: 10.1063/1.1646457 |
0.794 |
|
| 2004 |
Wu J, Han W, Walukiewicz W, Ager JW, Shan W, Haller EE, Zettl A. Raman Spectroscopy and Time-Resolved Photoluminescence of BN and BxCyNzNanotubes Nano Letters. 4: 647-650. DOI: 10.1021/Nl049862E |
0.602 |
|
| 2004 |
Kotegawa H, Kawasaki S, Harada A, Kawasaki Y, Okamoto K, Zheng G, Kitaoka Y, Yamamoto E, Haga Y, Onuki Y, Itoh KM, Haller EE. The microscopic coexistence of superconductivity and ferromagnetism in UGe2: 73Ge-NMR/NQR study Journal of Magnetism and Magnetic Materials. 272. DOI: 10.1016/J.Jmmm.2003.12.410 |
0.496 |
|
| 2004 |
Walukiewicz W, Li S, Wu J, Yu K, Ager J, Haller E, Lu H, Schaff WJ. Optical properties and electronic structure of InN and In-rich group III-nitride alloys Journal of Crystal Growth. 269: 119-127. DOI: 10.1016/J.Jcrysgro.2004.05.041 |
0.748 |
|
| 2004 |
Shan W, Wu J, Walukiewicz W, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Pressure dependence of optical transitions in semiconducting single-walled carbon nanotubes Physica Status Solidi (B) Basic Research. 241: 3367-3373. DOI: 10.1002/Pssb.200405250 |
0.64 |
|
| 2004 |
Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys Physica Status Solidi (B). 241: 3107-3112. DOI: 10.1002/Pssb.200405232 |
0.737 |
|
| 2004 |
Shan W, Walukiewicz W, Ager III JW, Yu KM, Wu J, Haller EE, Nabetani Y. Oxygen induced band-gap reduction in ZnOxSe1−x alloys Physica Status Solidi (B). 241: 603-606. DOI: 10.1002/Pssb.200304168 |
0.673 |
|
| 2003 |
Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ. Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y12.9 |
0.611 |
|
| 2003 |
Kuleev IG, Kuleev II, Taldenkov AN, Inyushkin AV, Ozhogin VI, Itoh KM, Haller EE. Normal processes of phonon-phonon scattering and the drag thermopower in germanium crystals with isotopic disorder Journal of Experimental and Theoretical Physics. 96: 1078-1088. DOI: 10.1134/1.1591219 |
0.522 |
|
| 2003 |
Perinati E, Barbera M, Collura A, Serio S, Silver EH, Beeman JW, Haller EE, Landis DA, Madden NW. Modeling the energy thermalization of x-ray photons in a microcalorimeter with superconducting absorber Astronomical Telescopes and Instrumentation. 4851: 812-822. DOI: 10.1117/12.461559 |
0.306 |
|
| 2003 |
Poglitsch A, Katterloher RO, Hoenle R, Beeman JW, Haller EE, Richter H, Groezinger U, Haegel NM, Krabbe A. Far-infrared photoconductor arrays for Herschel and SOFIA Astronomical Telescopes and Instrumentation. 4855: 115-128. DOI: 10.1117/12.459184 |
0.313 |
|
| 2003 |
Graf T, Ishikawa T, Itoh KM, Haller EE, Stutzmann M, Brandt MS. Hyperfine interactions at dangling bonds in amorphous germanium Physical Review B. 68. DOI: 10.1103/Physrevb.68.205208 |
0.524 |
|
| 2003 |
Wu J, Yu KM, Walukiewicz W, He G, Haller EE, Mars DE, Chamberlin DR. Mutual passivation effects in Si-doped dilutedInyGa1−yAs1−xNxalloys Physical Review B. 68. DOI: 10.1103/Physrevb.68.195202 |
0.761 |
|
| 2003 |
Inyushkin AV, Taldenkov AN, Ozhogin VI, Itoh KM, Haller EE. Isotope effect on the phonon-drag component of the thermoelectric power of germanium Physical Review B. 68. DOI: 10.1103/Physrevb.68.153203 |
0.555 |
|
| 2003 |
Hsu L, McCluskey MD, Haller EE. Pressure dependence of donor excitation spectra in AlSb Physical Review B. 67: 35209. DOI: 10.1103/Physrevb.67.035209 |
0.301 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Miotkowski I, Ramdas AK, Su C, Sou IK, Perera RCC, Denlinger JD. Origin of the large band-gap bowing in highly mismatched semiconductor alloys Physical Review B. 67. DOI: 10.1103/Physrevb.67.035207 |
0.665 |
|
| 2003 |
Kotegawa H, Kawasaki S, Harada A, Kawasaki Y, Okamoto K, Zheng G, Kitaoka Y, Yamamoto E, Haga Y, Onuki Y, Itoh KM, Haller EE. Unconventional superconductivity in ferromagnetic UGe2: a 73Ge nuclear magnetic resonance/nuclear quadrupole resonance study Journal of Physics: Condensed Matter. 15. DOI: 10.1088/0953-8984/15/28/323 |
0.515 |
|
| 2003 |
Li SX, Wu J, Haller EE, Walukiewicz W, Shan W, Lu H, Schaff WJ. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys Applied Physics Letters. 83: 4963-4965. DOI: 10.1063/1.1633681 |
0.689 |
|
| 2003 |
Cardozo BL, Haller EE, Reichertz LA, Beeman JW. Far-infrared absorption in GaAs:Te liquid phase epitaxial films Applied Physics Letters. 83: 3990-3992. DOI: 10.1063/1.1624491 |
0.67 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Shan W, Ager JW, Haller EE, Lu H, Schaff WJ, Metzger WK, Kurtz S. Superior radiation resistance of In 1-xGa xN alloys: Full-solar-spectrum photovoltaic material system Journal of Applied Physics. 94: 6477-6482. DOI: 10.1063/1.1618353 |
0.47 |
|
| 2003 |
Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815 |
0.729 |
|
| 2003 |
Chamberlin DR, Bründermann E, Haller EE. Narrow linewidth intervalence-band emission from germanium terahertz lasers Applied Physics Letters. 83: 3-5. DOI: 10.1063/1.1590422 |
0.653 |
|
| 2003 |
Ng HT, Chen B, Li J, Han J, Meyyappan M, Wu J, Li SX, Haller EE. Optical properties of single-crystalline ZnO nanowires on m-sapphire Applied Physics Letters. 82: 2023-2025. DOI: 10.1063/1.1564870 |
0.505 |
|
| 2003 |
Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Li SX, Haller EE, Geisz JF, Friedman DJ, Kurtz SR. Band-gap bowing effects in BxGa1−xAs alloys Journal of Applied Physics. 93: 2696-2699. DOI: 10.1063/1.1540230 |
0.666 |
|
| 2003 |
Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5 |
0.727 |
|
| 2003 |
Emtsev VV, Davydov VY, Emtsev KV, Poloskin DS, Oganesyan GA, Kozlovskii VV, Haller EE. Shallow donor centers in gallium nitrides Physica Status Solidi (C). 601-604. DOI: 10.1002/Pssc.200306191 |
0.342 |
|
| 2003 |
Wu J, Walukiewicz W, Yu KM, Ager III JW, Haller EE, Lu H, Schaff WJ. Narrow bandgap group III-nitride alloys Physica Status Solidi (B). 240: 412-416. DOI: 10.1002/Pssb.200303475 |
0.66 |
|
| 2002 |
Sharp ID, Bracht HA, Silvestri HH, Nicols SP, Beeman JW, Hansen JL, Larsen AN, Haller EE. Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F13.11 |
0.772 |
|
| 2002 |
Silvestri HH, Sharp ID, Bracht HA, Nicols SP, Beeman JW, Hansen J, Nylandsted-Larsen A, Haller EE. Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F13.10 |
0.77 |
|
| 2002 |
HALLER EE. Isotopically Controlled Semiconductors Journal of Nuclear Science and Technology. 39: 382-385. DOI: 10.1557/Mrs2006.141 |
0.312 |
|
| 2002 |
Bandaru J, Beeman JW, Haller EE. Growth and performance of Ge:Sb blocked impurity band (BIB) detectors Proceedings of Spie - the International Society For Optical Engineering. 4486: 193-199. DOI: 10.1117/12.455106 |
0.801 |
|
| 2002 |
Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Effects of the narrow band gap on the properties of InN Physical Review B. 66. DOI: 10.1103/Physrevb.66.201403 |
0.66 |
|
| 2002 |
Kato J, Itoh KM, Haller EE. Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors Physical Review B. 65. DOI: 10.1103/Physrevb.65.241201 |
0.551 |
|
| 2002 |
Wu J, Walukiewicz W, Haller EE. Band structure of highly mismatched semiconductor alloys: Coherent potential approximation Physical Review B. 65. DOI: 10.1103/Physrevb.65.233210 |
0.661 |
|
| 2002 |
McCluskey MD, Haller EE, Becla P. Carbon acceptors and carbon-hydrogen complexes in AlSb Physical Review B - Condensed Matter and Materials Physics. 65: 452011-452014. DOI: 10.1103/Physrevb.65.045201 |
0.545 |
|
| 2002 |
Kolobov AV, Morita K, Itoh KM, Haller EE. A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots Applied Physics Letters. 81: 3855-3857. DOI: 10.1063/1.1521261 |
0.512 |
|
| 2002 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Small band gap bowing in In1-xGaxN alloys Applied Physics Letters. 80: 4741-4743. DOI: 10.1063/1.1489481 |
0.645 |
|
| 2002 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Unusual properties of the fundamental band gap of InN Applied Physics Letters. 80: 3967-3969. DOI: 10.1063/1.1482786 |
0.633 |
|
| 2002 |
Bandaru J, Beeman JW, Haller EE. Far-infrared absorption in Sb-doped Ge epilayers near the metal-insulator transition Applied Physics Letters. 80: 3536-3538. DOI: 10.1063/1.1479203 |
0.803 |
|
| 2002 |
Wu J, Walukiewicz W, Yu KM, Ager JW, Shan W, Haller EE, Miotkowski I, Ramdas AK, Miotkowska S. Band anticrossing effects in MgyZn1−yTe1−xSex alloys Applied Physics Letters. 80: 34-36. DOI: 10.1063/1.1430853 |
0.637 |
|
| 2002 |
Bandaru J, Beeman JW, Haller EE, Samperi S, Haegel NM. Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors Infrared Physics and Technology. 43: 353-360. DOI: 10.1016/S1350-4495(02)00178-0 |
0.794 |
|
| 2002 |
Yu KM, Wu J, Walukiewicz W, Beeman JW, Ager JW, Haller EE, Miotkowski I, Ramdas A. Band anticrossing in highly mismatched group II-VI semiconductor alloys Journal of Electronic Materials. 31: 754-758. DOI: 10.1007/S11664-002-0232-2 |
0.601 |
|
| 2001 |
Wu J, Shan W, Walukiewicz W, Yu KM, Ager JW, Haller EE, Xin HP, Tu CW. Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells Physical Review B. 64. DOI: 10.1103/Physrevb.64.085320 |
0.649 |
|
| 2001 |
Nakajima M, Harima H, Morita K, Itoh KM, Mizoguchi K, Haller EE. Coherent confined LO phonons in70Ge/74Geisotope superlattices generated by ultrafast laser pulses Physical Review B. 63. DOI: 10.1103/PhysRevB.63.161304 |
0.42 |
|
| 2001 |
Yu KM, Walukiewicz W, Wu J, Beeman JW, Ager JW, Haller EE, Shan W, Xin HP, Tu CW, Ridgway MC. Formation of diluted III–V nitride thin films by N ion implantation Journal of Applied Physics. 90: 2227-2234. DOI: 10.1063/1.1388860 |
0.455 |
|
| 2001 |
Wu J, Walukiewicz W, Haller EE. Calculation of the ground state of shallow donors in GaAs1-xNx Journal of Applied Physics. 89: 789-791. DOI: 10.1063/1.1324999 |
0.606 |
|
| 2001 |
Itoh KM, Haller EE. Isotopically engineered semiconductors – new media for the investigation of nuclear spin related effects in solids Physica E: Low-Dimensional Systems and Nanostructures. 10: 463-466. DOI: 10.1016/S1386-9477(01)00138-2 |
0.505 |
|
| 2001 |
Nicols SP, Bracht H, Benamara M, Liliental-Weber Z, Haller EE. Mechanism of zinc diffusion in gallium antimonide Physica B-Condensed Matter. 308: 854-857. DOI: 10.1016/S0921-4526(01)00913-9 |
0.309 |
|
| 2001 |
Kato J, Itoh KM, Haller EE. Correlated to random transition of ionized impurity distribution in n-type Ge : (As, Ga) Physica B-Condensed Matter. 308: 521-524. DOI: 10.1016/S0921-4526(01)00751-7 |
0.537 |
|
| 2001 |
Kato J, Itoh KM, Haller EE. Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga) Physica B-Condensed Matter. 302: 1-6. DOI: 10.1016/S0921-4526(01)00398-2 |
0.548 |
|
| 2001 |
Dubon OD, Silvestri HH, Walukiewicz W, Haller EE. Hopping conduction through the 2s states of copper acceptors in uniaxially stressed germanium Solid State Communications. 117: 537-541. DOI: 10.1016/S0038-1098(00)00499-3 |
0.778 |
|
| 2001 |
Shan W, Walukiewicz W, Yu K, Ager III J, Haller E, Geisz J, Friedman D, Olson J, Kurtz S, Xin H, Tu C. Band Anticrossing in III-N-V Alloys Physica Status Solidi (B). 223: 75-85. DOI: 10.1002/1521-3951(200101)223:1<75::Aid-Pssb75>3.0.Co;2-1 |
0.477 |
|
| 2000 |
Bracht H, Nicols SP, Walukiewicz W, Silveira JP, Briones F, Haller EE. Large disparity between gallium and antimony self-diffusion in gallium antimonide Nature. 408: 69-72. PMID 11081507 DOI: 10.1038/35040526 |
0.49 |
|
| 2000 |
Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Miotkowski I, Seong MJ, Alawadhi H, Ramdas AK. Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries Physical Review Letters. 85: 1552-5. PMID 10970552 DOI: 10.1103/Physrevlett.85.1552 |
0.543 |
|
| 2000 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE, Ridgway MC. Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation Mrs Proceedings. 650. DOI: 10.1557/Proc-650-R8.3/O13.3 |
0.605 |
|
| 2000 |
Schloss LF, Haller EE. Pyroelectric Coefficient Optimization Through Grain Size Control in (Ba, Sr)TiO3 Thin Films Mrs Proceedings. 623. DOI: 10.1557/Proc-623-119 |
0.779 |
|
| 2000 |
Kellermann S, Yu KM, Haller EE, Bourret-Courchesne ED. Arsenic Incorporation in Gallium Nitride grown by Metalorganic Chemical Vapor Deposition using Dimethylhydrazine and Tertiarybutylarsenic Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T6.11.1 |
0.329 |
|
| 2000 |
Katterloher RO, Barl L, Jakob G, Konuma M, Haller EE, Frenzl O, Hermans L. 32-pixel FIRGA demonstrator: testing of a gallium arsenide photoconductor array for far-infrared astronomy Astronomical Telescopes and Instrumentation. 4013: 100-108. DOI: 10.1117/12.393991 |
0.331 |
|
| 2000 |
Watanabe M, Itoh KM, Ootuka Y, Haller EE. Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously dopedp-typeGe Physical Review B. 62: R2255-R2258. DOI: 10.1103/Physrevb.62.R2255 |
0.529 |
|
| 2000 |
Shan W, Walukiewicz W, Yu KM, Ager JW, Haller EE, Geisz JF, Friedman DJ, Olson JM, Kurtz SR, Nauka C. Effect of nitrogen on the electronic band structure of group III-N-V alloys Physical Review B. 62: 4211-4214. DOI: 10.1103/Physrevb.62.4211 |
0.528 |
|
| 2000 |
Yu KM, Walukiewicz W, Shan W, Ager JW, Wu J, Haller EE, Geisz JF, Friedman DJ, Olson JM. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys Physical Review B. 61: R13337-R13340. DOI: 10.1103/Physrevb.61.R13337 |
0.519 |
|
| 2000 |
Silver E, Schnopper H, Bandler S, Brickhouse N, Murray S, Barbera M, Takacs E, Gillaspy JD, Porto JV, Kink I, Laming JM, Madden N, Landis D, Beeman J, Haller EE. Laboratory Astrophysics Survey of Key X‐Ray Diagnostic Lines Using A Microcalorimeter on an Electron Beam Ion Trap The Astrophysical Journal. 541: 495-500. DOI: 10.1086/309420 |
0.313 |
|
| 2000 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE. Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs Applied Physics Letters. 77: 3607-3609. DOI: 10.1063/1.1328766 |
0.518 |
|
| 2000 |
Hovenier JN, de Kleijn RM, Klaassen TO, Wenckebach WT, Chamberlin DR, Bründermann E, Haller EE. Mode-locked operation of the copper-doped germanium terahertz laser Applied Physics Letters. 77: 3155-3157. DOI: 10.1063/1.1326487 |
0.64 |
|
| 2000 |
Bründermann E, Chamberlin DR, Haller EE. High duty cycle and continuous terahertz emission from germanium Applied Physics Letters. 76: 2991-2993. DOI: 10.1063/1.126555 |
0.683 |
|
| 2000 |
Hegmann FA, Williams JB, Cole B, Sherwin MS, Beeman JW, Haller EE. Time-resolved photoresponse of a gallium-doped germanium photoconductor using a variable pulse-width terahertz source Applied Physics Letters. 76: 262-264. DOI: 10.1063/1.125741 |
0.55 |
|
| 2000 |
Watanabe M, Itoh KM, Ootuka Y, Haller EE. Metal-insulator transition of NTD 70Ge: Ga in magnetic fields Physica B-Condensed Matter. 284: 1677-1678. DOI: 10.1016/S0921-4526(99)02879-3 |
0.511 |
|
| 2000 |
Hitti B, Kreitzman SR, Lichti R, Head T, Estle TL, Wynne D, Haller EE. Muon dynamics in GaAs LPE lightly doped material: Initial RFμSR study Physica B: Condensed Matter. 289: 554-557. DOI: 10.1016/S0921-4526(00)00254-4 |
0.756 |
|
| 2000 |
Morita K, Itoh K, Muto J, Mizoguchi K, Usami N, Shiraki Y, Haller E. Growth and characterization of 70 Ge n / 74 Ge n isotope superlattices Thin Solid Films. 369: 405-408. DOI: 10.1016/S0040-6090(00)00901-9 |
0.558 |
|
| 1999 |
Shan W, Ager J, Walukiewicz W, Haller E, McCluskey M, Johnson N, Bour D. Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells Mrs Internet Journal of Nitride Semiconductor Research. 4: 191-196. DOI: 10.1557/S1092578300002441 |
0.637 |
|
| 1999 |
Chamberlin DR, Bruendermannw E, Haller EE. Investigation of New Geometries for High Duty Cycle Far-Infrared p-Type Germanium Lasers Mrs Proceedings. 607. DOI: 10.1557/Proc-607-285 |
0.687 |
|
| 1999 |
Ozhogin VI, Babushkina NA, Belova LM, Zhernov AP, Haller EE, Itoh KM. Isotope effect for the thermal expansion coefficient of germanium Journal of Experimental and Theoretical Physics. 88: 135-137. DOI: 10.1134/1.558775 |
0.525 |
|
| 1999 |
Shan W, Walukiewicz W, Ager JW, Haller EE, Geisz JF, Friedman DJ, Olson JM, Kurtz SR. Band Anticrossing in GaInNAs Alloys Physical Review Letters. 82: 1221-1224. DOI: 10.1103/Physrevlett.82.1221 |
0.541 |
|
| 1999 |
Navarro-Contreras H, de Anda-Salazar F, Olvera-Hernández J, Hsu L, McCluskey MD, Haller EE. Shallow to deep transformation of Se donors in GaSb under hydrostatic pressure Physical Review B. 59: 8003-8007. DOI: 10.1103/Physrevb.59.8003 |
0.57 |
|
| 1999 |
Schloss LF, Haller EE. The effect of growth temperature on pulsed laser deposited (Ba, Sr)TiO3 thin films designed for pyroelectric far-infrared detector applications Integrated Ferroelectrics. 25: 103-112. DOI: 10.1080/10584589908210164 |
0.783 |
|
| 1999 |
Shan W, Yu KM, Walukiewicz W, Ager JW, Haller EE, Ridgway MC. Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation Applied Physics Letters. 75: 1410-1412. DOI: 10.1063/1.124951 |
0.429 |
|
| 1999 |
Chamberlin DR, Bründermann E, Haller EE. Planar contact geometry for far-infrared germanium lasers Applied Physics Letters. 74: 3761-3763. DOI: 10.1063/1.124219 |
0.639 |
|
| 1999 |
Bründermann E, Chamberlin DR, Haller EE. Novel design concepts of widely tunable germanium terahertz lasers Infrared Physics and Technology. 40: 141-151. DOI: 10.1016/S1350-4495(99)00006-7 |
0.669 |
|
| 1999 |
Laßmann K, Linsenmaier C, Maier F, Zeller F, Haller EE, Itoh KM, Khirunenko LI, Pajot B, Müssig H. Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium Physica B-Condensed Matter. 263: 384-387. DOI: 10.1016/S0921-4526(98)01391-X |
0.523 |
|
| 1999 |
McCluskey MD, Haller EE. Chapter 9: Hydrogen in III-V and II-VI Semiconductors Semiconductors and Semimetals. 61: 373-440. DOI: 10.1016/S0080-8784(08)62711-8 |
0.539 |
|
| 1999 |
Bracht H, Norseng M, Haller E, Eberl K, Cardona M. Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures Solid State Communications. 112: 301-314. DOI: 10.1016/S0038-1098(99)00376-2 |
0.338 |
|
| 1999 |
Skierbiszewski C, Perlin P, Wisniewski P, Suski T, Walukiewicz W, Shan W, Ager J, Haller E, Geisz J, Friedman D, Olson J, Kurtz S. Effect of Nitrogen-Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys Physica Status Solidi (B). 216: 135-139. DOI: 10.1002/(Sici)1521-3951(199911)216:1<135::Aid-Pssb135>3.0.Co;2-# |
0.546 |
|
| 1999 |
Itoh K, Watanabe M, Ootuka Y, Haller E. Scaling analysis of the low temperature conductivity in neutron-transmutation-doped70Ge:Ga Annalen Der Physik. 8: 631-637. DOI: 10.1002/(Sici)1521-3889(199911)8:7/9<631::Aid-Andp631>3.0.Co;2-6 |
0.524 |
|
| 1998 |
Queisser HJ, Haller EE. Defects in semiconductors: some fatal, some vital Science (New York, N.Y.). 281: 945-50. PMID 9703502 DOI: 10.1126/Science.281.5379.945 |
0.341 |
|
| 1998 |
Walukiewicz W, Hsu L, Haller EE. Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures Materials Science Forum. 1449-1454. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1449 |
0.469 |
|
| 1998 |
Shan W, Ager J, Walukiewicz W, Haller E, McCluskey M, Johnson N, Bour D. Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells Mrs Proceedings. 537. DOI: 10.1557/PROC-537-G3.15 |
0.491 |
|
| 1998 |
Bracht H, Haller EE, Eberl K, Cardona M, Clark-Phelps R. Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound Semiconductors Mrs Proceedings. 527. DOI: 10.1557/Proc-527-335 |
0.305 |
|
| 1998 |
Katterloher RO, Barl L, Beeman JW, Czech E, Engemann D, Frenzl O, Haegel NM, Haller EE, Henning T, Hermans L, Jakob G, Konuma M, Pilbratt GL. The 4x32 FIRGA array - A pacesetter for a 52x32 element gallium arsenide focal plane array Proceedings of Spie - the International Society For Optical Engineering. 3354: 116-125. DOI: 10.1117/12.317301 |
0.334 |
|
| 1998 |
Shan W, Ager JW, Walukiewicz W, Haller EE, McCluskey MD, Johnson NM, Bour DP. Pressure dependence of optical transitions inIn0.15Ga0.85N/GaNmultiple quantum wells Physical Review B. 58: R10191-R10194. DOI: 10.1103/PhysRevB.58.R10191 |
0.477 |
|
| 1998 |
Watanabe M, Ootuka Y, Itoh KM, Haller EE. Electrical properties of isotopically enriched neutron-transmutation-doped70Ge:Ganear the metal-insulator transition Physical Review B. 58: 9851-9857. DOI: 10.1103/Physrevb.58.9851 |
0.514 |
|
| 1998 |
Göbel A, Wang DT, Cardona M, Pintschovius L, Reichardt W, Kulda J, Pyka NM, Itoh K, Haller EE. Effects of isotope disorder on energies and lifetimes of phonons in germanium Physical Review B. 58: 10510-10522. DOI: 10.1103/Physrevb.58.10510 |
0.492 |
|
| 1998 |
Zhang JM, Giehler M, Göbel A, Ruf T, Cardona M, Haller EE, Itoh K. Optical Phonons In Isotopic Ge Studied By Raman Scattering Physical Review B. 57: 1348-1351. DOI: 10.1103/Physrevb.57.1348 |
0.557 |
|
| 1998 |
Navarro-Contreras H, de Anda-Salazar F, Hsu L, Haller EE. DX-center transformation of Te donors in GaSb under hydrostatic pressure Physical Review B. 57: 12169-12173. DOI: 10.1103/Physrevb.57.12169 |
0.301 |
|
| 1998 |
Shan W, Walukiewicz W, Haller EE, Little BD, Song JJ, McCluskey MD, Johnson NM, Feng ZC, Schurman M, Stall RA. Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition Journal of Applied Physics. 84: 4452-4458. DOI: 10.1063/1.368669 |
0.476 |
|
| 1998 |
Bründermann E, Chamberlin DR, Haller EE. Thermal effects in widely tunable germanium terahertz lasers Applied Physics Letters. 73: 2757-2759. DOI: 10.1063/1.122581 |
0.653 |
|
| 1998 |
Shan W, Perlin P, Ager JW, Walukiewicz W, Haller EE, McCluskey MD, Johnson NM, Bour DP. Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure Applied Physics Letters. 73: 1613-1615. DOI: 10.1063/1.122266 |
0.505 |
|
| 1998 |
Silveira E, Dondl W, Abstreiter G, Haller E. Raman scattering in annealed isotopic (70Ge) (74Ge) superlattices Physica E: Low-Dimensional Systems and Nanostructures. 2: 291-294. DOI: 10.1016/S1386-9477(98)00061-7 |
0.326 |
|
| 1998 |
Olsen C, Beeman J, Itoh K, Farmer J, Ozhogin V, Haller E. Selenium double donors in neutron transmutation doped, isotopically controlled germaniun Solid State Communications. 108: 895-898. DOI: 10.1016/S0038-1098(98)00314-7 |
0.568 |
|
| 1998 |
McCluskey M, Haller E, Walukiewicz W, Becla P. Anti-crossing behavior of local vibrational modes in AlSb Solid State Communications. 106: 587-590. DOI: 10.1016/S0038-1098(98)00095-7 |
0.611 |
|
| 1998 |
Hirsch MT, Duxstad KJ, Haller EE, Ruvimov S, Liliental-Weber Z. Correlation of microstructure with electrical behavior of Ti/GaN schottky contacts Journal of Electronic Materials. 27: 1236-1239. DOI: 10.1007/S11664-998-0075-6 |
0.329 |
|
| 1997 |
Itoh KM, Kinoshita T, Walukiewicz W, Beeman JW, Haller EE, Muto J, Farmer JW, Ozhogin VI. Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As Materials Science Forum. 77-82. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.77 |
0.607 |
|
| 1997 |
Aichele N, Gommel U, Lassmann K, Maier F, Zeller F, Haller EE, Itoh KM, Khirunenko LI, Shakhovtsov VI, Pajot B, Fogarassy E, Müssig HJ. Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium Materials Science Forum. 47-52. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.47 |
0.477 |
|
| 1997 |
Hsu L, Walukiewicz W, Haller EE. Defect Formation and Electronic Transport at AlGaN/GaN Interfaces Materials Science Forum. 1749-1754. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1749 |
0.49 |
|
| 1997 |
Haller EE, McCluskey MD. Infrared Optical Studies of Semiconductors at Large Hydrostatic Pressures Mrs Proceedings. 499. DOI: 10.1557/Proc-499-371 |
0.559 |
|
| 1997 |
Shan W, Ager JW, Walukiewicz W, Haller EE, Little BD, Song JJ, Goldenberg B, Feng ZC, Schurman M, Stall RA. High Pressure Study of III-Nitrides and Related Heterostructures Mrs Proceedings. 499. DOI: 10.1557/Proc-499-361 |
0.517 |
|
| 1997 |
Bracht H, Walukiewicz W, Haller EE. Modeling of Atom Diffusion and Segregation in Semiconductor Heterostructures Mrs Proceedings. 490. DOI: 10.1557/Proc-490-93 |
0.522 |
|
| 1997 |
Chamberlin DR, Dubon OD, Bründermann E, Haller EE, Reichertzl LA, Sirmain G, Linhart AM, Röser HP. Multivalent Acceptor-Doped Germanium Lasers: a solid-state tunable source from 75 to 300 μm Mrs Proceedings. 484. DOI: 10.1557/PROC-484-177 |
0.754 |
|
| 1997 |
Hirsch MT, Seiferta O, Kirfel O, Parisia J, Wolk JA, Walukiewicz W, Haller EE, Ambacher O, Stutzmann M. Photoquenching Of Persistent Photoconductivity In N-Type GaN Mrs Proceedings. 482. DOI: 10.1557/Proc-482-531 |
0.526 |
|
| 1997 |
Wetzel C, Amano H, Akasaki I, Suski T, Ager JW, Weber ER, Haller EE, Meyer BK. Localized Donors in Gan: Spectroscopy Using Large Pressures Mrs Proceedings. 482. DOI: 10.1557/Proc-482-489 |
0.367 |
|
| 1997 |
Knowlton WB, Walton JT, Wong YK, Mason IA, Haller EE. High Silicon Self-Interstitial Diffusivity as Revealed by Lithium Ion Drifting Mrs Proceedings. 469. DOI: 10.1557/Proc-469-77 |
0.323 |
|
| 1997 |
Dubon OD, Walukiewicz W, Beeman JW, Haller EE. Direct Observation of the Hubbard Gap in a Semiconductor Physical Review Letters. 78: 3519-3522. DOI: 10.1103/PhysRevLett.78.3519 |
0.54 |
|
| 1997 |
McCluskey MD, Haller EE. Interstitial oxygen in silicon under hydrostatic pressure Physical Review B. 56: 9520-9523. DOI: 10.1103/Physrevb.56.9520 |
0.529 |
|
| 1997 |
Asen-Palmer M, Bartkowski K, Gmelin E, Cardona M, Zhernov AP, Inyushkin AV, Taldenkov A, Ozhogin VI, Itoh KM, Haller EE. Thermal conductivity of germanium crystals with different isotopic compositions Physical Review B. 56: 9431-9447. DOI: 10.1103/Physrevb.56.9431 |
0.53 |
|
| 1997 |
McCluskey MD, Haller EE, Walker J, Johnson NM, Vetterhöffer J, Weber J, Joyce TB, Newman RC. Local vibrational modes in GaAs under hydrostatic pressure Physical Review B. 56: 6404-6407. DOI: 10.1103/Physrevb.56.6404 |
0.517 |
|
| 1997 |
Artacho E, Ynduráin F, Pajot B, Ramírez R, Herrero CP, Khirunenko LI, Itoh KM, Haller EE. Interstitial oxygen in germanium and silicon Physical Review B. 56: 3820-3833. DOI: 10.1103/Physrevb.56.3820 |
0.543 |
|
| 1997 |
Silveira E, Dondl W, Abstreiter G, Haller EE. Ge self-diffusion in isotopic(70Ge)n(74Ge)msuperlattices: A Raman study Physical Review B. 56: 2062-2069. DOI: 10.1103/Physrevb.56.2062 |
0.308 |
|
| 1997 |
Itoh KM, Kinoshita T, Muto J, Haegel NM, Walukiewicz W, Dubon OD, Beeman JW, Haller EE. Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment Physical Review B. 56: 1906-1910. DOI: 10.1103/Physrevb.56.1906 |
0.719 |
|
| 1997 |
Reichertz LA, Dubon OD, Sirmain G, Bründermann E, Hansen WL, Chamberlin DR, Linhart AM, Röser HP, Haller EE. Stimulated far-infrared emission from combined cyclotron resonances in germanium Physical Review B. 56: 12069-12072. DOI: 10.1103/PhysRevB.56.12069 |
0.712 |
|
| 1997 |
Hsu L, Zehender S, Bauser E, Haller EE. Pressure-induced shallow donor transformations in gallium arsenide Physical Review B. 55: 10515-10518. DOI: 10.1103/Physrevb.55.10515 |
0.337 |
|
| 1997 |
Wang L, Wolk JA, Hsu L, Haller EE, Erickson JW, Cardona M, Ruf T, Silveira JP, Briones F. Gallium self-diffusion in gallium phosphide Applied Physics Letters. 70: 1831-1833. DOI: 10.1063/1.118705 |
0.302 |
|
| 1997 |
Sirmain G, Reichertz LA, Dubon OD, Haller EE, Hansen WL, Bründermann E, Linhart AM, Röser HP. Stimulated far-infrared emission from copper-doped germanium crystals Applied Physics Letters. 70: 1659-1661. DOI: 10.1063/1.118662 |
0.507 |
|
| 1997 |
Hirsch M, Duxstad K, Haller E. Effects of annealing on Ti Schottky barriers on n-type GaN Electronics Letters. 33: 95. DOI: 10.1049/El:19970021 |
0.308 |
|
| 1996 |
Wang L, Hsu L, Haller EE, Erickson JW, Fischer A, Eberl K, Cardona M. Ga self-diffusion in GaAs isotope heterostructures. Physical Review Letters. 76: 2342-2345. PMID 10060673 DOI: 10.1103/Physrevlett.76.2342 |
0.31 |
|
| 1996 |
McCluskey MD, Hsu L, Wang L, Haller EE. Infrared absorption of solid nitrogen at high pressures. Physical Review. B, Condensed Matter. 54: 8962-8964. PMID 9984607 DOI: 10.1103/Physrevb.54.8962 |
0.548 |
|
| 1996 |
Wetzel C, Walukiewicz W, Haller EE, Ager J, Grzegory I, Porowski S, Suski T. Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure. Physical Review. B, Condensed Matter. 53: 1322-1326. PMID 9983591 DOI: 10.1103/Physrevb.53.1322 |
0.509 |
|
| 1996 |
McCluskey MD, Haller EE, Walukiewicz W, Becla P. Hydrogen passivation of Se and Te in AlSb. Physical Review. B, Condensed Matter. 53: 16297-16301. PMID 9983466 DOI: 10.1103/Physrevb.53.16297 |
0.621 |
|
| 1996 |
Harada Y, Fujii K, Ohyama T, Itoh KM, Haller EE. Stark Broadening Of Impurity Absorption Lines By Inhomogeneous Electric Fields In Highly Compensated Germanium Physical Review B. 53: 16272-16278. PMID 9983462 DOI: 10.1103/Physrevb.53.16272 |
0.349 |
|
| 1996 |
Itoh KM, Muto J, Walukiewicz W, Beeman JW, Haller EE, Kim H, Mayur AJ, Sciacca MD, Ramdas AK, Buczko R, Farmer JW, Ozhogin VI. Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium. Physical Review. B, Condensed Matter. 53: 7797-7804. PMID 9982226 DOI: 10.1103/Physrevb.53.7797 |
0.519 |
|
| 1996 |
Hirsch MT, Duxstad KJ, Haller EE. Evolution of Ti Schottky Barrier Heights on n-Type GaN with Annealing Mrs Proceedings. 449. DOI: 10.1557/Proc-449-1115 |
0.327 |
|
| 1996 |
Ozhogin VI, Inyushkin AV, Taldenkov AN, Tikhomirov AV, Popov GÉ, Haller E, Itoh K. Isotope effect in the thermal conductivity of germanium single crystals Jetp Letters. 63: 490-494. DOI: 10.1134/1.567053 |
0.512 |
|
| 1996 |
Sirmain G, Dubon OD, Hansen WL, Olsen CS, Haller EE. A copper‐related acceptor complex in vacuum grown germanium crystals Journal of Applied Physics. 79: 209-213. DOI: 10.1063/1.360933 |
0.493 |
|
| 1996 |
Walukiewicz W, Liliental‐Weber Z, Jasinski J, Almonte M, Prasad A, Haller EE, Weber ER, Grenier P, Whitaker JF. High resistivity and ultrafast carrier lifetime in argon implanted GaAs Applied Physics Letters. 69: 2569-2571. DOI: 10.1063/1.117702 |
0.507 |
|
| 1996 |
Fischer S, Wetzel C, Hansen WL, Bourret‐Courchesne ED, Meyer BK, Haller EE. Properties of GaN grown at high rates on sapphire and on 6H–SiC Applied Physics Letters. 69: 2716-2718. DOI: 10.1063/1.117688 |
0.3 |
|
| 1996 |
Götz W, Johnson NM, Bour DP, McCluskey MD, Haller EE. Local vibrational modes of the Mg–H acceptor complex in GaN Applied Physics Letters. 69: 3725-3727. DOI: 10.1063/1.117202 |
0.535 |
|
| 1996 |
McCluskey MD, Haller EE, Zach FX, Bourret-Courchesne ED. Vibrational spectroscopy of arsenic-hydrogen complexes in ZnSe Applied Physics Letters. 68: 3476-3478. DOI: 10.1063/1.116799 |
0.536 |
|
| 1996 |
Bründermann E, Linhart AM, Reichertz L, Röser HP, Dubon OD, Hansen WL, Sirmain G, Haller EE. Double acceptor doped Ge: A new medium for inter-valence-band lasers Applied Physics Letters. 68: 3075-3077. DOI: 10.1063/1.116427 |
0.557 |
|
| 1996 |
Wetzel C, Fischer S, Krüger J, Haller EE, Molnar RJ, Moustakas TD, Mokhov EN, Baranov PG. Strongly localized excitons in gallium nitride Applied Physics Letters. 68: 2556-2558. DOI: 10.1063/1.116182 |
0.344 |
|
| 1996 |
Bründermann E, Linhart AM, Röser HP, Dubon OD, Hansen WL, Haller EE. Miniaturization of p-Ge lasers: Progress toward continuous wave operation Applied Physics Letters. 68: 1359-1361. DOI: 10.1063/1.116079 |
0.535 |
|
| 1996 |
Beeman JW, Hansen WL, Dubon OD, Haller EE. High performance antimony-doped germanium photoconductors Infrared Physics and Technology. 37: 715-721. DOI: 10.1016/S1350-4495(96)00020-5 |
0.594 |
|
| 1996 |
Sadoulet B, Akerib D, Barnes PD, Cummings A, Da Silva A, Diaz R, Emes J, Golwala S, Haller EE, Itoh K, Knowlton W, Queinnec F, Ross RR, Seitz D, Shutt T, et al. Particle detection and non-equilibrium phonons: Experience with large germanium crystals and NTD Ge thermistors Physica B: Condensed Matter. 219: 741-743. DOI: 10.1016/0921-4526(95)00871-3 |
0.514 |
|
| 1996 |
Shutt T, Akerib DS, Barnes PD, Cummings A, Da Silva A, Diaz R, Emes J, Golwala SR, Haller EE, Itoh K, Knowlton B, Quiennec F, Ross RR, Sadoulet B, Seitz D, et al. Recent results with a 62 g Ge cryogenic dark matter detector Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 370: 165-167. DOI: 10.1016/0168-9002(95)01367-9 |
0.508 |
|
| 1996 |
Haller EE, Hsu L, Wolk JA. Far Infrared Spectroscopy of Semiconductors at Large Hydrostatic Pressures Physica Status Solidi (B). 198: 153-165. DOI: 10.1002/Pssb.2221980122 |
0.371 |
|
| 1995 |
McCluskey MD, Haller EE, Walker J, Johnson NM. Vibrational spectroscopy of group-II-acceptor-hydrogen complexes in GaP. Physical Review. B, Condensed Matter. 52: 11859-11864. PMID 9980321 DOI: 10.1103/Physrevb.52.11859 |
0.533 |
|
| 1995 |
Fuchs HD, Walukiewicz W, Haller EE, Dondl W, Schorer R, Abstreiter G, Rudnev AI, Tikhomirov AV, Ozhogin VI. Germanium 70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies. Physical Review B. 51: 16817-16821. PMID 9978690 DOI: 10.1103/Physrevb.51.16817 |
0.49 |
|
| 1995 |
Dubon OD, Wilke I, Beeman JW, Haller EE. Dependence of the hole lifetime on uniaxial stress in Ga-doped Ge. Physical Review. B, Condensed Matter. 51: 7349-7352. PMID 9977310 DOI: 10.1103/Physrevb.51.7349 |
0.536 |
|
| 1995 |
Wetzel C, Walukiewicz W, Haller EE. Carrier Localization in Gallium Nitride Materials Science Forum. 31-36. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.31 |
0.529 |
|
| 1995 |
Bykov VA, Dolgikh NI, Emtsev VV, Haller EE, Hitko VI, Karpovich LM, Shoh VF, Utenko VI. Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals Materials Science Forum. 1413-1418. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.1413 |
0.3 |
|
| 1995 |
Itoh KM, Walukiewicz W, Beeman JW, Haller EE, Kim HJ, Mayur AJ, Sciacca MD, Ramdas AK, Buczko R, Farmer JW, Ozhogin VI. Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As Materials Science Forum. 127-132. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.127 |
0.502 |
|
| 1995 |
Haller EE. Defect studies with isotopically designed semiconductors Materials Science Forum. 1491-1496. DOI: 10.2172/106525 |
0.32 |
|
| 1995 |
Fischer S, Wetzel C, Walukiewicz W, Haller E. Fine Structure of the 3.42 eV Emission Band in GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-571 |
0.553 |
|
| 1995 |
Pressel K, Heitz R, Eckey L, Loa I, Thurian P, Hoffmann A, Meyer B, Fischer S, Wetzel C, Haller E. Identification of Transition Metals in GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-491 |
0.338 |
|
| 1995 |
Wetzel C, Fischer S, Walukiewicz W, Ager III J, Haller E, Grzegory I, Porowski S, Suski T. Defect Studies of GaN under Large Hydrostatic Pressure Mrs Proceedings. 395. DOI: 10.1557/Proc-395-417 |
0.524 |
|
| 1995 |
Haller EE. Local Vibrational Mode (LVM) Spectroscopy of Semiconductors Mrs Proceedings. 378. DOI: 10.1557/Proc-378-547 |
0.345 |
|
| 1995 |
Wetzel C, Walukiewicz W, Haller EE, Amano H, Akasaki I. Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure Mrs Proceedings. 378. DOI: 10.1557/Proc-378-509 |
0.544 |
|
| 1995 |
Haller EE. Isotopically engineered semiconductors Journal of Applied Physics. 77: 2857-2878. DOI: 10.1063/1.358700 |
0.328 |
|
| 1995 |
Chen AL, Walukiewicz W, Duxstad K, Haller EE. Migration of compensating defects in p-type ZnSe during annealing Applied Physics Letters. 1522. DOI: 10.1063/1.115686 |
0.528 |
|
| 1995 |
Heiβ W, Fabianek B, Unterrainer K, Gornik E, Hansen W, Haller E. Influence of impurity absorption on p-Ge 1-h hole laser spectra Solid State Communications. 93: 460. DOI: 10.1016/0038-1098(95)80029-8 |
0.302 |
|
| 1995 |
Itoh K, Walukiewicz W, Beeman J, Haller E, Farmer J, Ozhogin V. Compensation dependence of Ga impurity absorption spectra in highly compensated Ge: Ga, As Solid State Communications. 93: 456. DOI: 10.1016/0038-1098(95)80015-8 |
0.575 |
|
| 1995 |
Harada Y, Fujii K, Ohyama T, Haller E, Itoh K. Stark-broadening by inhomogeneous electric field in compensated germanium Solid State Communications. 93: 455. DOI: 10.1016/0038-1098(95)80014-X |
0.407 |
|
| 1995 |
Wilke I, Dubon OD, Beeman JW, Haller EE. Spectroscopy of the hole population in bound excited acceptor states during recombination in p-type Ge Solid State Communications. 93: 409-414. DOI: 10.1016/0038-1098(94)00808-6 |
0.584 |
|
| 1995 |
Farhoomand J, McMurray RE, Haller E, Bauser E, Silier I. Characterization of high purity GaAs far-infrared photoconductors International Journal of Infrared and Millimeter Waves. 16: 1051-1064. DOI: 10.1007/Bf02068276 |
0.339 |
|
| 1994 |
Dubon OD, Beeman JW, Falicov LM, Fuchs HD, Haller EE, Wang C. Copper acceptors in uniaxially stressed germanium: 1s3 to 1s2 2s1 ground-state transformation. Physical Review Letters. 72: 2231-2234. PMID 10055822 DOI: 10.1103/PhysRevLett.72.2231 |
0.595 |
|
| 1994 |
Mayur AJ, Sciacca MD, Udo MK, Ramdas AK, Itoh K, Wolk J, Haller EE. Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium. Physical Review. B, Condensed Matter. 49: 16293-16299. PMID 10010777 DOI: 10.1103/Physrevb.49.16293 |
0.529 |
|
| 1994 |
Parks C, Ramdas AK, Rodriguez S, Itoh KM, Haller EE. Electronic band structure of isotopically pure germanium: Modulated transmission and reflectivity study. Physical Review. B, Condensed Matter. 49: 14244-14250. PMID 10010504 DOI: 10.1103/Physrevb.49.14244 |
0.361 |
|
| 1994 |
Chen Y, Liu X, Weber E, Bourret ED, Liliental-Weber Z, Haller EE, Washburn J, Olego DJ, Dorman DR, Gaines JM, Tasker NR. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions Applied Physics Letters. 65: 549-551. DOI: 10.1557/Proc-340-491 |
0.327 |
|
| 1994 |
Itoh KM, Walukiewicz W, Fuchs HD, Beeman JW, Haller EE, Farmer JW, Ozhogin VI. Neutral-impurity scattering in isotopically engineered Ge Physical Review B. 50: 16995-17000. DOI: 10.1103/Physrevb.50.16995 |
0.523 |
|
| 1994 |
Heiss W, Unterrainer K, Gornik E, Hansen WL, Haller EE. Influence of impurity absorption on germanium hot-hole laser spectra Semiconductor Science and Technology. 9: 638-640. DOI: 10.1088/0268-1242/9/5S/064 |
0.324 |
|
| 1994 |
Fuchs HD, Itoh KM, Haller EE. Isotopically controlled germanium: A new medium for the study of carrier scattering by neutral impurities Philosophical Magazine B. 70: 661-670. DOI: 10.1080/01418639408240240 |
0.531 |
|
| 1994 |
McCluskey MD, Haller EE, Walker J, Johnson NM. Spectroscopy of hydrogen-related complexes in GaP:Zn Applied Physics Letters. 65: 2191-2192. DOI: 10.1063/1.112758 |
0.518 |
|
| 1994 |
Chen AL, Walukiewicz W, Haller EE. Pressure dependence of the photoluminescence spectra of nitrogen-doped ZnSe: Evidence of compensating deep donors Applied Physics Letters. 65: 1006-1008. DOI: 10.1063/1.112207 |
0.515 |
|
| 1994 |
Moll AJ, Haller EE, Ager JW, Walukiewicz W. Direct evidence of carbon precipitates in GaAs and InP Applied Physics Letters. 65: 1145-1147. DOI: 10.1063/1.112123 |
0.439 |
|
| 1994 |
Itoh KM, Haller EE, Hansen WL, Beeman JW, Farmer JW, Rudnev A, Tikhomirov A, Ozhogin VI. Neutron transmutation doping of isotopically engineered Ge Applied Physics Letters. 64: 2121-2123. DOI: 10.1063/1.111703 |
0.553 |
|
| 1994 |
Haller EE. Advanced far-infrared detectors Infrared Physics & Technology. 35: 127-146. DOI: 10.1016/1350-4495(94)90074-4 |
0.309 |
|
| 1994 |
LeGros M, Silver E, Madden N, Beeman J, Goulding F, Landis D, Haller E. Microcalorimeters for broad band high resolution X-ray spectral analysis Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 345: 492-495. DOI: 10.1016/0168-9002(94)90504-5 |
0.316 |
|
| 1994 |
Wolk J, Ager J, Duxstad K, Walukiewicz W, Haller E, Taskar N, Dorman D, Olega D. The nitrogen-hydrogen complex in ZnSe Journal of Crystal Growth. 138: 1071-1072. DOI: 10.1016/0022-0248(94)90958-X |
0.429 |
|
| 1994 |
Cooke DW, Leon M, Paciotti MA, Bennett BL, Rivera OM, Cox SFJ, Boekema C, Lam J, Morrobel-Sosa A, Meier PF, Estle TL, Hitti B, Lichti RL, Davis EA, Oostens J, ... Haller EE, et al. Muon level-crossing resonance in Si:Al Hyperfine Interactions. 86: 639-644. DOI: 10.1007/Bf02068958 |
0.306 |
|
| 1993 |
Itoh K, Hansen WL, Haller EE, Farmer JW, Ozhogin VI. Neutron Transmutation Doping of Isotopically Controlled Ge Materials Science Forum. 117-122. DOI: 10.4028/Www.Scientific.Net/Msf.117-118.117 |
0.523 |
|
| 1993 |
Davies G, Lightowlers EC, Ozhogin VI, Itoh K, Hansen WL, Haller EE. Isotopic Dependence of Near-Band-Gap Luminescence from Germanium Materials Science Forum. 111-116. DOI: 10.4028/Www.Scientific.Net/Msf.117-118.111 |
0.542 |
|
| 1993 |
Itoh K, Hansen WL, Haller EE, Farmer JW, Ozhogin VI, Rudnev A, Tikhomirov A. High purity isotopically enriched 70Ge and 74Ge single crystals: Isotope separation, growth, and properties Journal of Materials Research. 8: 1341-1347. DOI: 10.1557/Jmr.1993.1341 |
0.498 |
|
| 1993 |
Davies G, Lightowlers EC, Hui TS, Ozhogin V, Itoh KM, Hansen WL, Haller EE. Isotope dependence of the lowest direct energy gap in crystalline germanium Semiconductor Science and Technology. 8: 2201-2204. DOI: 10.1088/0268-1242/8/12/028 |
0.483 |
|
| 1993 |
Davies G, Hartung J, Ozhogin V, Itoh K, Hansen WL, Haller EE. Effects of isotope disorder on phonons in germanium determined from bound exciton luminescence Semiconductor Science and Technology. 8: 127-130. DOI: 10.1088/0268-1242/8/1/021 |
0.475 |
|
| 1993 |
Moll AJ, Ager JW, Yu KM, Walukiewicz W, Haller EE. The effect of coimplantation on the electrical activity of implanted carbon in GaAs Journal of Applied Physics. 74: 7118-7123. DOI: 10.1063/1.355027 |
0.403 |
|
| 1993 |
Shutt T, Barnes PD, Cummings A, DaSilva A, Ellman B, Emes J, Giraud-Heraud Y, Haller EE, Lange AE, Ross RR, Sadoulet B, Smith G, Stubbs C, Stockwell W, Wang N, et al. A cryogenic detector with simultaneous phonon and ionization measurement for background rejection Nuclear Inst. and Methods in Physics Research, A. 326: 166-171. DOI: 10.1016/0168-9002(93)90347-K |
0.3 |
|
| 1993 |
Bliss DE, Walukiewicz W, Haller EE. Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies Journal of Electronic Materials. 22: 1401-1404. DOI: 10.1007/BF02649985 |
0.482 |
|
| 1993 |
Knowlton WB, Itoh KM, Beeman JW, Emes JH, Loretto D, Haller EE. Ge-Au eutectic bonding of Ge {100} single crystals Journal of Low Temperature Physics. 93: 343-348. DOI: 10.1007/Bf00693444 |
0.515 |
|
| 1993 |
Itoh KM, Hansen WL, Beeman JW, Haller EE, Farmer JW, Ozhogin VI. Low temperature hopping conduction in neutron transmutation doped isotopically enriched70Ge:Ga single crystals Journal of Low Temperature Physics. 93: 307-312. DOI: 10.1007/Bf00693438 |
0.527 |
|
| 1993 |
Aubourg E, Cummings A, Shutt T, Stockwell W, Barnes PD, Da Silva A, Emes J, Haller EE, Lange AE, Ross RR, Sadoulet B, Smith G, Wang N, White S, Young BA, et al. Measurement of electron-phonon decoupling time in neutron-transmutation doped germanium at 20 mK Journal of Low Temperature Physics. 93: 289-294. DOI: 10.1007/Bf00693435 |
0.334 |
|
| 1992 |
Heyman JN, Ager III, Haller EE, Johnson NM, Walker J, Doland CM. Hydrogen-induced platelets in silicon: Infrared absorption and Raman scattering. Physical Review. B, Condensed Matter. 45: 13363-13366. PMID 10001419 DOI: 10.1103/Physrevb.45.13363 |
0.624 |
|
| 1992 |
Wolk JA, Kruger MB, Heyman JN, Beeman JW, Guitron JG, Bourret ED, Walukiewicz W, Haller EE, Jeanloz R. Vibrational mode Fourier Transform Spectroscopy with a diamond anvil cell: Modes of the Si DX center and S related centers in GaAs Materials Science Forum. 757-762. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.757 |
0.319 |
|
| 1992 |
Davies G, Lightowlers EC, Itoh K, Hansen WL, Haller EE, Ozhogin V. Isotope dependence of the indirect energy gap of germanium Semiconductor Science and Technology. 7: 1271-1273. DOI: 10.1088/0268-1242/7/10/010 |
0.474 |
|
| 1992 |
Bliss DE, Walukiewicz W, Ager JW, Haller EE, Chan KT, Tanigawa S. Annealing studies of low-temperature-grown GaAs:Be Journal of Applied Physics. 71: 1699-1707. DOI: 10.1063/1.351200 |
0.506 |
|
| 1992 |
Hofmann G, Madok J, Haegel NM, Roos G, Johnson NM, Haller EE. Interaction of hydrogen and deuterium with copper in GaAs Applied Physics Letters. 61: 2914-2916. DOI: 10.1063/1.108020 |
0.303 |
|
| 1992 |
Moll AJ, Yu KM, Walukiewicz W, Hansen WL, Haller EE. Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects Applied Physics Letters. 60: 2383-2385. DOI: 10.1063/1.107004 |
0.416 |
|
| 1992 |
Etchegoin P, Weber J, Cardona M, Hansen WL, Itoh KM, Haller EE. Isotope effect in Ge : a photoluminescence study Solid State Communications. 83: 843-848. DOI: 10.1016/0038-1098(92)90897-I |
0.552 |
|
| 1992 |
Fuchs HD, Grein CH, Cardona M, Hansen WL, Itoh KM, Haller EE. Isotopic disorder-effects on the phonons in germanium Solid State Communications. 82: 225-228. DOI: 10.1016/0038-1098(92)90631-I |
0.537 |
|
| 1991 |
Heyman JN, Haller EE, Giesekus A. Characterization of the beryllium substitutional pair in silicon by infrared spectroscopy. Physical Review. B, Condensed Matter. 44: 12769-12775. PMID 9999452 DOI: 10.1103/Physrevb.44.12769 |
0.638 |
|
| 1991 |
Wolk JA, Kruger MB, Heyman JN, Walukiewicz W, Jeanloz R, Haller EE. Observation of a local vibrational mode of DX centres in Si doped GaAs Semiconductor Science and Technology. 6: B78-B83. DOI: 10.1088/0268-1242/6/10B/015 |
0.428 |
|
| 1991 |
Moll AJ, Walukiewicz W, Yu KM, Hansen WL, Haller EE. The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs Mrs Proceedings. 240. DOI: 10.1063/1.355027 |
0.471 |
|
| 1991 |
Walukiewicz W, Haller EE. Effect of scattering by native defects on electron mobility in modulation-doped heterostructures Applied Physics Letters. 58: 1638-1640. DOI: 10.1063/1.105150 |
0.458 |
|
| 1991 |
Haller EE. Electronic properties of hydrogen-related complexes in pure semiconductors Physica B: Condensed Matter. 170: 351-360. DOI: 10.1016/0921-4526(91)90146-6 |
0.342 |
|
| 1991 |
Nakata H, Otsuka E, Haller E. Dynamical Stark effect of bound excitons in germanium doped with beryllium or zinc Solid State Communications. 80: 387-390. DOI: 10.1016/0038-1098(91)90712-5 |
0.335 |
|
| 1991 |
Haller EE, Wolk JA. Si DX centers in GaAs at large hydrostatic pressures Applied Physics a Solids and Surfaces. 53: 26-31. DOI: 10.1007/Bf00323430 |
0.355 |
|
| 1990 |
Wang N, Wellstood FC, Sadoulet B, Haller EE, Beeman J. Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK. Physical Review. B, Condensed Matter. 41: 3761-3768. PMID 9994179 DOI: 10.1103/Physrevb.41.3761 |
0.333 |
|
| 1990 |
Wu IC, Beeman JW, Luke PN, Hansen WL, Haller EE. Long-Wavelength Germanium Photodetectors by Ion Implantation Mrs Proceedings. 216. DOI: 10.1557/Proc-216-473 |
0.306 |
|
| 1990 |
Bliss DE, Nolte DD, Walukiewicz W, Haller EE, Lagowski J. Absolute pressure dependence of the second ionization level of EL2 in GaAs Applied Physics Letters. 56: 1143-1145. DOI: 10.1557/Proc-163-815 |
0.636 |
|
| 1989 |
Hamera M, Walukiewicz W, Nolte DD, Haller EE. Dependence of transition-metal impurity levels on host composition in III-V semiconductors. Physical Review. B, Condensed Matter. 39: 10114-10119. PMID 9947790 DOI: 10.1103/Physrevb.39.10114 |
0.636 |
|
| 1989 |
Kenny TW, Richards PL, Park IS, Haller EE, Beeman JW. Bias-induced nonlinearities in the dc I-V characteristics of neutron-transmutation-doped germanium at liquid-4He temperatures. Physical Review. B, Condensed Matter. 39: 8476-8482. PMID 9947561 DOI: 10.1103/Physrevb.39.8476 |
0.516 |
|
| 1989 |
Merk E, Heyman J, Haller EE. Infrared Absorption Study of Zinc-Doped Silicon. Mrs Proceedings. 163. DOI: 10.1557/Proc-163-15 |
0.343 |
|
| 1989 |
Hurd JL, Perry DL, Lee BT, Yu KM, Bourret ED, Haller EE. Polycrystalline hexagonal boron nitride films on SiO2for III-V semiconductor applications Journal of Materials Research. 4: 350-354. DOI: 10.1557/Jmr.1989.0350 |
0.32 |
|
| 1989 |
Wang N, Cleland AN, Cummings A, Lange A, Ross R, Sadoulet B, Steiner H, Shutt T, Wellstood FC, Beeman J, Haller EE. Particle detection with semiconductor thermistors at low temperhtures Ieee Transactions On Nuclear Science. 36: 852-856. DOI: 10.1109/23.34564 |
0.316 |
|
| 1989 |
Merk E, Heyman J, Haller E. Infrared spectroscopy of the neutral zinc double-acceptor in silicon Solid State Communications. 72: 851-854. DOI: 10.1016/0038-1098(89)90412-2 |
0.326 |
|
| 1988 |
Nolte DD, Walukiewicz W, Haller EE. Comment on volume relaxation around defects in silicon upon electron emission. Physical Review. B, Condensed Matter. 38: 6316-6317. PMID 9947100 DOI: 10.1103/Physrevb.38.6316 |
0.644 |
|
| 1988 |
Nolte DD, Haller EE. Thermal emission of holes from defects in uniaxially stressed p-type silicon. Physical Review. B, Condensed Matter. 38: 9857-9869. PMID 9945808 DOI: 10.1103/PhysRevB.38.9857 |
0.45 |
|
| 1987 |
Wang JQ, Richards PL, Beeman JW, Haller EE. Stressed photoconductive detector for far-infrared space applications. Applied Optics. 26: 4767-71. PMID 20523443 DOI: 10.1364/Ao.26.004767 |
0.487 |
|
| 1987 |
Nolte DD, Walukiewicz W, Haller EE. Band-edge hydrostatic deformation potentials in III-V semiconductors. Physical Review Letters. 59: 501-504. PMID 10035785 DOI: 10.1103/Physrevlett.59.501 |
0.65 |
|
| 1987 |
Nolte DD, Walukiewicz W, Haller EE. Deep-level defects in silicon and the band-edge hydrostatic deformation potentials. Physical Review. B, Condensed Matter. 36: 9392-9394. PMID 9942829 DOI: 10.1103/Physrevb.36.9392 |
0.657 |
|
| 1987 |
Nolte DD, Walukiewicz W, Haller EE. Critical criterion for axial models of defects in as-grown n-type GaAs. Physical Review. B, Condensed Matter. 36: 9374-9377. PMID 9942824 DOI: 10.1103/Physrevb.36.9374 |
0.617 |
|
| 1987 |
Yu KM, Walukiewicz W, Jaklevic JM, Haller EE, Sands T. Effects of interface reactions on electrical characteristics of metal-GaAs contacts Applied Physics Letters. 51: 189-191. DOI: 10.1063/1.98918 |
0.519 |
|
| 1987 |
Nolte DD, Haller EE. Optimization of the energy resolution of deep level transient spectroscopy Journal of Applied Physics. 62: 900-906. DOI: 10.1063/1.339697 |
0.521 |
|
| 1987 |
Yu KM, Cheung SK, Sands T, Jaklevic JM, Haller EE. Correlation between solid‐state reaction and electrical properties of the Rh/GaAs Schottky contact Journal of Applied Physics. 61: 1099-1102. DOI: 10.1063/1.338205 |
0.308 |
|
| 1987 |
Jones KS, Haller EE. Ion implantation of boron in germanium Journal of Applied Physics. 61: 2469-2477. DOI: 10.1063/1.337918 |
0.334 |
|
| 1987 |
Haller E. IR-spectroscopy of impurity complexes in germanium Physica B+C. 146: 201-211. DOI: 10.1016/0378-4363(87)90062-3 |
0.303 |
|
| 1987 |
Thewalt M, Labrie D, Booth I, Clayman B, Lightowlers E, Haller E. Photoluminescence and infrared absorption studies of double acceptors in germanium Physica B+C. 146: 47-64. DOI: 10.1016/0378-4363(87)90050-7 |
0.339 |
|
| 1987 |
Haller EE. Far infrared fourier transform spectroscopy of semiconductors Mikrochimica Acta. 93: 241-261. DOI: 10.1007/Bf01201693 |
0.361 |
|
| 1986 |
Wang JQ, Richards PL, Beeman JW, Haegel NM, Haller EE. Optical efficiency of far-infrared photoconductors. Applied Optics. 25: 4127. PMID 18235755 DOI: 10.1364/Ao.25.004127 |
0.487 |
|
| 1986 |
Nolte DD, Haller EE. Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon Materials Science Forum. 457-462. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.457 |
0.478 |
|
| 1986 |
Yu KM, Cheung SK, Sands T, Jaklevic JM, Cheung NW, Haller EE. Schottky barrier degradation of the W/GaAs system after high‐temperature annealing Journal of Applied Physics. 60: 3235-3242. DOI: 10.1063/1.337744 |
0.331 |
|
| 1986 |
Germer TA, Haegel NM, Haller EE. Photo Hall‐effect characterization of closely compensated Ge:Be Journal of Applied Physics. 60: 1055-1058. DOI: 10.1063/1.337397 |
0.322 |
|
| 1986 |
Thewalt M, Labrie D, Lightowlers E, Haller E. Effects of <001> uniaxial stress on the photoluminescence spectrum of Ge doped with Zn Solid State Communications. 60: 327-330. DOI: 10.1016/0038-1098(86)90743-X |
0.335 |
|
| 1985 |
Haller EE. Defect Identification in High-Purity Semiconductors Mrs Proceedings. 46. DOI: 10.1557/Proc-46-495 |
0.337 |
|
| 1985 |
Hubbard GS, Haller EE, Pearton SJ. The Effect of Novel Deep Donors on the Resolution of Reverse Electrode Germanium Radiation Detectors Ieee Transactions On Nuclear Science. 32: 549-552. DOI: 10.1109/Tns.1985.4336892 |
0.332 |
|
| 1985 |
Yu KM, Jaklevic JM, Haller EE. Applications of Heavy-Ion Rutherford Backscattering Spectrometry (HIRBS) to the analysis of contact structures on GaAs and Ge Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 606-610. DOI: 10.1016/0168-583X(85)90318-0 |
0.304 |
|
| 1985 |
Falicov LM, Haller EE. Dynamic impurities in ultrapure semiconductors Solid State Communications. 53: 1121-1125. DOI: 10.1016/0038-1098(85)90890-7 |
0.413 |
|
| 1985 |
Haegel N, Hueschen M, Haller E. Development of high-responsivity Ge:Ga photoconductors Infrared Physics. 25: 273-276. DOI: 10.1016/0020-0891(85)90090-9 |
0.314 |
|
| 1984 |
Pearton SJ, Tavendale AJ, Kahn JM, Haller EE. Deep Level Impurities in Germanium and Silicon: Low Temperature Passivation or Removal Techniques Ieee Transactions On Nuclear Science. 31: 326-330. DOI: 10.1109/Tns.1984.4333269 |
0.344 |
|
| 1984 |
Pearton SJ, Haller EE, Kahn JM. Quenched-in deep acceptors in germanium Journal of Physics C: Solid State Physics. 17: 2375-2379. DOI: 10.1088/0022-3719/17/13/018 |
0.301 |
|
| 1984 |
Pearton SJ, Tavendale AJ, Kahn JM, Haller EE. The nature of the dominant γ-induced defects in high-purity germanium Radiation Effects. 81: 293-308. DOI: 10.1080/00337578408206076 |
0.323 |
|
| 1984 |
Pearton SJ, Kahn JM, Hansen WL, Haller EE. Deuterium in germanium: Interaction with point defects Journal of Applied Physics. 55: 1464-1471. DOI: 10.1063/1.333402 |
0.318 |
|
| 1984 |
Palaio NP, Pearton SJ, Haller EE. Annealing characteristics of neutron‐transmutation‐doped germanium Journal of Applied Physics. 55: 1437-1443. DOI: 10.1063/1.333397 |
0.348 |
|
| 1984 |
Döring KP, Arnold KP, Gladisch M, Haas N, Haller EE, Herlach D, Jacobs W, Krause M, Krauth M, Orth H, Seeger A. Muonium in ultra-pure and Si-doped germanium Hyperfine Interactions. 18: 629-634. DOI: 10.1007/Bf02064882 |
0.328 |
|
| 1984 |
Clawson CW, Crowe KM, Haller EE, Rosenblum SS, Brewer JH. Effects of electronically neutral impurities on muonium in germanium Hyperfine Interactions. 18: 603-604. DOI: 10.1007/Bf02064876 |
0.327 |
|
| 1983 |
Haller EE, McMurray RE, Falicov LM, Haegel NM, Hansen WL. Three holes bound to a double acceptor: Be+ in germanium Physical Review Letters. 51: 1089-1091. DOI: 10.1103/Physrevlett.51.1089 |
0.519 |
|
| 1983 |
Cross JW, Ho LT, Ramdas AK, Sauer R, Haller EE. Excitation spectra of group-II acceptors in Ge: Ge(Be0), Ge(Be-), and Ge(Mg0) Physical Review B. 28: 6953-6960. DOI: 10.1103/Physrevb.28.6953 |
0.317 |
|
| 1983 |
Held GA, Haller EE, Jeffries CD. Observation of luminescence from bound multiexciton complexes in gallium doped germanium Solid State Communications. 47: 459-462. DOI: 10.1016/0038-1098(83)91068-2 |
0.325 |
|
| 1983 |
Lange AE, Kreysa E, McBride SE, Richards PL, Haller EE. Improved fabrication techniques for infrared bolometers International Journal of Infrared and Millimeter Waves. 4: 689-706. DOI: 10.1007/Bf01009690 |
0.514 |
|
| 1983 |
Haegel NM, Haller EE, Luke PN. Performance and materials aspects of Ge:Be photoconductors International Journal of Infrared and Millimeter Waves. 4: 945-954. DOI: 10.1007/Bf01009319 |
0.315 |
|
| 1982 |
Hansen WL, Haller E. High-Purity Germanium Crystal Growing Mrs Proceedings. 16. DOI: 10.1557/Proc-16-1 |
0.302 |
|
| 1982 |
Fong A, Walton JT, Haller EE, Sommer HA, Guldberg J. Characterization of large diameter silicon by low-bias charge collection analysis in Si(Li) pin diodes Nuclear Instruments and Methods in Physics Research. 199: 623-630. DOI: 10.1016/0167-5087(82)90164-8 |
0.331 |
|
| 1981 |
Haller EE, Hansen WL, Goulding FS. Physics Of Ultra-Pure Germanium Advances in Physics. 30: 93-138. DOI: 10.1080/00018738100101357 |
0.332 |
|
| 1980 |
Jos B, Haller EE, Falicov LM. Donor complex with tunneling hydrogen in pure germanium Physical Review B. 22: 832-840. DOI: 10.1103/Physrevb.22.832 |
0.474 |
|
| 1980 |
Haller EE, Joós B, Falicov LM. Acceptor complexes in germanium: Systems with tunneling hydrogen Physical Review B. 21: 4729-4739. DOI: 10.1103/Physrevb.21.4729 |
0.468 |
|
| 1980 |
Hubbard GS, Haller EE. Electrical properties of dislocations in ultra-pure germanium Journal of Electronic Materials. 9: 51-66. DOI: 10.1007/Bf02655214 |
0.363 |
|
| 1978 |
Hubbard GS, Haller EE, Hansen WL. Zone Refining High-Purity Germanium Ieee Transactions On Nuclear Science. 25: 362-370. DOI: 10.1109/Tns.1978.4329333 |
0.31 |
|
| 1978 |
Haller EE, Falicov LM. Lithium-oxygen donor in germanium: A dynamic tunneling system Physical Review Letters. 41: 1192-1194. DOI: 10.1103/Physrevlett.41.1192 |
0.493 |
|
| 1977 |
Hansen WL, Haller EE. Amorphous Germanium as an Electron or Hole Blocking Contact on High-Purity Germanium Detectors Ieee Transactions On Nuclear Science. 24: 61-63. DOI: 10.1109/Tns.1977.4328643 |
0.353 |
|
| 1976 |
Haller EE, Hansen WL, Hubbard GS, Goulding FS. Origin and Control of the Dominant Impurities in High-Purity Germanium Ieee Transactions On Nuclear Science. 23: 81-87. DOI: 10.1109/Tns.1976.4328219 |
0.329 |
|
| 1975 |
Kraner HW, Pehl RH, Haller EE. Fast Neutron Radiation Damage of High-Purity Germanium Detectors Ieee Transactions On Nuclear Science. 22: 149-159. DOI: 10.1109/Tns.1975.4327633 |
0.305 |
|
| 1975 |
Scott Hubbard G, Haller EE, Hansen WL. Characterization of polycrystalline zone-refined ingots of high-purity germanium Nuclear Instruments and Methods. 130: 481-485. DOI: 10.1016/0029-554X(75)90046-4 |
0.307 |
|
| 1974 |
Haller EE, Hansen WL. Impurities in High-Purity Germanium as Determined by Fourier Transform Spectroscopy Ieee Transactions On Nuclear Science. 21: 279-286. DOI: 10.1109/Tns.1974.4327472 |
0.339 |
|
| 1974 |
Hansen WL, Haller EE. A View of the Present Status and Future Prospecis of High Purity Germanium Ieee Transactions On Nuclear Science. 21: 251-259. DOI: 10.1109/Tns.1974.4327469 |
0.3 |
|
| 1974 |
Haller EE, Hansen WL. High resolution fourier transform spectroscopy of shallow acceptors in ultra-pure germanium Solid State Communications. 15: 687-692. DOI: 10.1016/0038-1098(74)90241-5 |
0.308 |
|
| 1972 |
Haller EE, Hansen WL, Goulding FS. Evaluation of High-Purity Germanium by Pulse Measurements on Detectors Ieee Transactions On Nuclear Science. 19: 271-274. DOI: 10.1109/Tns.1972.4326737 |
0.304 |
|
| 1972 |
Hansen WL, Haller EE. High-purity germanium-observations on the nature of acceptors Ieee Transactions On Nuclear Science. 19: 260-264. DOI: 10.1109/Tns.1972.4326519 |
0.319 |
|
| Show low-probability matches. |
