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Lothar Ley, Prof. Dr. - Publications

Affiliations: 
1972-1975 Chemistry University of California, Berkeley, Berkeley, CA, United States 
 1976-1990 Max-Planck-Institut für Festkörperforschung, Stuttgart, Baden-Württemberg, Germany 
 1990- Institut für Technische Physik Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Bavaria, Germany 
Area:
Photoemission, Solid-State Physics
Website:
https://www.laserphysics.nat.fau.eu/person/lothar-ley/
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294 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Xing K, Tsai A, Creedon DL, Yianni SA, McCallum JC, Ley L, Qi D, Pakes CI. Engineering the spin-orbit interaction in surface conducting diamond with a solid-state gate dielectric Applied Physics Letters. 116: 174002. DOI: 10.1063/5.0005690  0.33
2020 Schenk AK, Sear MJ, Dontschuk N, Tsai A, Rietwyk KJ, Tadich A, Cowie BCC, Ley L, Stacey A, Pakes CI. Development of a silicon–diamond interface on (111) diamond Applied Physics Letters. 116: 71602. DOI: 10.1063/1.5144093  0.406
2020 Xing K, Creedon DL, Yianni SA, Akhgar G, Zhang L, Ley L, McCallum JC, Qi DC, Pakes CI. Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond Carbon. 164: 244-250. DOI: 10.1016/J.Carbon.2020.03.047  0.361
2020 Xing K, Xiang Y, Jiang M, Creedon DL, Akhgar G, Yianni SA, Xiao H, Ley L, Stacey A, McCallum JC, Zhuiykov S, Pakes CI, Qi DC. MoO3 induces p-type surface conductivity by surface transfer doping in diamond Applied Surface Science. 509: 144890. DOI: 10.1016/J.Apsusc.2019.144890  0.381
2019 Zhang XD, Leckey RC, Riley JD, Faul J, Ley L. Polarization-dependent angle-resolved photoemission study of a surface state on GaSb(110). Physical Review. B, Condensed Matter. 48: 5300-5305. PMID 10009048 DOI: 10.1103/Physrevb.48.5300  0.367
2019 Zhang XD, Riley JD, Leckey RC, Ley L. Conduction-band structure of GaAs as determined by angle-resolved photoemission. Physical Review. B, Condensed Matter. 48: 17077-17085. PMID 10008311 DOI: 10.1103/Physrevb.48.17077  0.364
2019 Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center. Physical Review. B, Condensed Matter. 48: 14301-14308. PMID 10007847 DOI: 10.1103/Physrevb.48.14301  0.398
2019 Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Determination of conduction-band states in GaAs(110), InP(110), and InAs(110). Physical Review. B, Condensed Matter. 47: 12625-12635. PMID 10005457 DOI: 10.1103/Physrevb.47.12625  0.391
2019 Cai YQ, Stampfl AP, Riley JD, Leckey RC, Usher B, Ley L. Two-dimensional electronic structure Ei(ki||,kiperp) of GaAs(001) studied by angle-resolved photoemission. Physical Review. B, Condensed Matter. 46: 6891-6901. PMID 10002392 DOI: 10.1103/Physrevb.46.6891  0.389
2019 Cai YQ, Riley JD, Leckey RC, Usher B, Fraxedas J, Ley L. Photoemission study of the electronic structure of a (GaAs)2/(AlAs)2 superlattice. Physical Review. B, Condensed Matter. 44: 3787-3792. PMID 10000006 DOI: 10.1103/Physrevb.44.3787  0.32
2019 Fraxedas J, Stampfl A, Leckey RC, Riley JD, Ley L. Angle-resolved constant-initial-state spectroscopy of GaAs. Physical Review. B, Condensed Matter. 42: 8966-8974. PMID 9995108 DOI: 10.1103/Physrevb.42.8966  0.319
2019 Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Conduction-band states and surface core excitons in InSb(110) and other III-V compounds. Physical Review. B, Condensed Matter. 50: 7384-7388. PMID 9974716 DOI: 10.1103/Physrevb.50.7384  0.404
2018 Akhgar G, Creedon DL, Beveren LHWv, Stacey A, Hoxley DI, McCallum JC, Ley L, Hamilton AR, Pakes CI. G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond Applied Physics Letters. 112: 42102. DOI: 10.1063/1.5010800  0.333
2016 Schenk AK, Rietwyk KJ, Tadich A, Stacey A, Ley L, Pakes CI. High resolution core level spectroscopy of hydrogen-terminated (1 0 0) diamond. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 305001. PMID 27299369 DOI: 10.1088/0953-8984/28/30/305001  0.381
2015 Schenk A, Tadich A, Sear M, O'Donnell KM, Ley L, Stacey A, Pakes C. Formation of a silicon terminated (100) diamond surface Applied Physics Letters. 106. DOI: 10.1063/1.4921181  0.383
2014 Smets Y, Rietwyk KJ, Fingerle M, Schmitt F, Lach S, Ley L, Ziegler C, Pakes CI. Energy level alignment at the porphyrin/cobaltocene interface: From transfer doping to cobalt intercalation Organic Electronics. 15: 531-536. DOI: 10.1016/J.Orgel.2013.12.014  0.362
2013 Smets Y, Stark CB, Lach S, Schmitt F, Wright CA, Wanke M, Ley L, Ziegler C, Pakes CI. Charge-induced distortion and stabilization of surface transfer doped porphyrin films. The Journal of Chemical Physics. 139: 044703. PMID 23901999 DOI: 10.1063/1.4815978  0.336
2013 Edmonds MT, Tadich A, Wanke M, O'Donnell KM, Smets Y, Rietwyk KJ, Riley JD, Pakes CI, Ley L. Valence-band structure and critical point energies of diamond along [100] Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.085123  0.384
2013 Rietwyk KJ, Wong SL, Cao L, O'Donnell KM, Ley L, Wee ATS, Pakes CI. Work function and electron affinity of the fluorine-terminated (100) diamond surface Applied Physics Letters. 102: 091604. DOI: 10.1063/1.4793999  0.392
2013 Ley L, Smets Y, Pakes CI, Ristein J. Calculating the Universal Energy-Level Alignment of Organic Molecules on Metal Oxides Advanced Functional Materials. 23: 794-805. DOI: 10.1002/Adfm.201201412  0.301
2011 Ley L. Preparation of low index single crystal diamond surfaces for surface science studies Diamond and Related Materials. 20: 418-427. DOI: 10.1016/J.Diamond.2010.12.020  0.336
2010 Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, Weber HB, Seyller T. Quasi-freestanding Graphene on SiC(0001) Materials Science Forum. 629-632. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.629  0.357
2010 Ristein J, Zhang W, Speck F, Ostler M, Ley L, Seyller T. Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide Journal of Physics D. 43: 345303. DOI: 10.1088/0022-3727/43/34/345303  0.3
2010 Strobel P, Ristein J, Ley L. Ozone-Mediated Polymerization of Fullerene and Fluorofullerene Thin Films Journal of Physical Chemistry C. 114: 4317-4323. DOI: 10.1021/Jp9105635  0.33
2010 Weingart S, Bock C, Kunze U, Emtsev KV, Seyller T, Ley L. Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties Physica E-Low-Dimensional Systems & Nanostructures. 42: 687-690. DOI: 10.1016/J.Physe.2009.11.006  0.316
2010 Speck F, Ostler M, Röhrl J, Emtsev KV, Hundhausen M, Ley L, Seyller T. Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM Physica Status Solidi (C). 7: 398-401. DOI: 10.1002/Pssc.200982496  0.338
2009 Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Röhrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials. 8: 203-7. PMID 19202545 DOI: 10.1038/Nmat2382  0.301
2008 Zhang W, Ristein J, Ley L. Hydrogen-terminated diamond electrodes. II. Redox activity. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 78: 041603. PMID 18999435 DOI: 10.1103/Physreve.78.041603  0.311
2008 Ristein J, Zhang W, Ley L. Hydrogen-terminated diamond electrodes. I. Charges, potentials, and energies. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 78: 041602. PMID 18999434 DOI: 10.1103/Physreve.78.041602  0.33
2008 Lauffer P, Emtsev KV, Graupner R, Seyller T, Ley L, Reshanov SA, Weber HB. Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy Physical Review B. 77: 155426. DOI: 10.1103/Physrevb.77.155426  0.326
2008 Emtsev KV, Speck F, Seyller T, Ley L, Riley JD. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study Physical Review B. 77: 155303. DOI: 10.1103/Physrevb.77.155303  0.37
2008 Röhrl J, Hundhausen M, Emtsev KV, Seyller T, Graupner R, Ley L. Raman spectra of epitaxial graphene on SiC(0001) Applied Physics Letters. 92: 201918. DOI: 10.1063/1.2929746  0.341
2008 Strobel P, Ristein J, Ley L. Controlled hydroxylation of diamond for covalent attachment of fullerene molecules Diamond and Related Materials. 17: 1362-1366. DOI: 10.1016/J.Diamond.2008.03.013  0.35
2008 Mareš JJ, Hubík P, Krištofik J, Ristein J, Strobel P, Ley L. Influence of ambient humidity on the surface conductivity of hydrogenated diamond Diamond and Related Materials. 17: 1356-1361. DOI: 10.1016/J.Diamond.2008.01.063  0.346
2008 Seyller T, Bostwick A, Emtsev KV, Horn K, Ley L, McChesney JL, Ohta T, Riley JD, Rotenberg E, Speck F. Epitaxial graphene : a new material Physica Status Solidi B-Basic Solid State Physics. 245: 1436-1446. DOI: 10.1002/Pssb.200844143  0.318
2008 Reshanov SA, Emtsev KV, Speck F, Gao K, Seyller TK, Pensl G, Ley L. Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts Physica Status Solidi B-Basic Solid State Physics. 245: 1369-1377. DOI: 10.1002/Pssb.200844083  0.37
2008 Hundhausen M, Püsche R, Röhrl J, Ley L. Characterization of Defects in Silicon Carbide by Raman Spectroscopy Physica Status Solidi B-Basic Solid State Physics. 245: 1356-1368. DOI: 10.1002/Pssb.200844052  0.402
2007 Seyller T, Emtsev KV, Speck F, Gao KY, Ley L. Electronic Structure of Graphite/6H-SiC Interfaces Materials Science Forum. 701-704. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.701  0.309
2007 Emtsev KV, Seyller T, Speck F, Ley L, Stojanov P, Riley JD, Leckey RCG. Initial stages of the graphite-SiC(0001) interface formation studied by photoelectron spectroscopy Materials Science Forum. 525-528. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.525  0.422
2007 Gao KY, Speck F, Emtsev K, Seyller T, Ley L. Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon Journal of Applied Physics. 102: 94503. DOI: 10.1063/1.2803727  0.404
2007 Lauffer P, Graupner R, Jung A, Hirsch A, Ley L. Ordered arrangement of 9-aminoanthracene on Au(1 1 1) surfaces: A scanning tunneling microscopy study Surface Science. 601: 5533-5539. DOI: 10.1016/J.Susc.2007.09.023  0.304
2007 Semmelroth K, Krieger M, Pensl G, Nagasawa H, Püsche R, Hundhausen M, Ley L, Nerding M, Strunk HP. Growth of cubic SiC single crystals by the physical vapor transport technique Journal of Crystal Growth. 308: 241-246. DOI: 10.1016/J.Jcrysgro.2007.07.060  0.31
2006 Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann PJ, Haller EE, Ager JW, Starke U. Electronic Raman Studies of Shallow Donors in Silicon Carbide Materials Science Forum. 579-584. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.579  0.347
2006 Ristein J, Strobel P, Ley L. Surface Conductivity of Diamond: A Novel Doping Mechanism Advances in Science and Technology. 48: 93-102. DOI: 10.4028/Www.Scientific.Net/Ast.48.93  0.394
2006 Emtsev KV, Seyller TK, Ley L, Broekman L, Tadich A, Riley J, Leckey R, Preuss M. Correlation effects at ideal SiC{0001}-(1 X 1) surfaces. Physical Review B. 73. DOI: 10.1103/Physrevb.73.075412;  0.317
2006 Seyller T, Emtsev KV, Speck F, Gao K-, Ley L. Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation Applied Physics Letters. 88: 242103. DOI: 10.1063/1.2213928  0.327
2006 Seyller T, Emtsev KV, Gao K, Speck F, Ley L, Tadich A, Broekman L, Riley JD, Leckey RCG, Rader O, Varykhalov A, Shikin AM. Structural and electronic properties of graphite layers grown on SiC(0001). Surface Science. 600: 3906-3911. DOI: 10.1016/J.Susc.2006.01.102  0.396
2006 Emtsev KV, Seyller T, Ley L, Tadich A, Broekman L, Riley JD, Leckey RCG, Preuss M. Electronic properties of clean unreconstructed 6H-SiC(0001) surfaces studied by angle resolved photoelectron spectroscopy Surface Science. 600: 3845-3850. DOI: 10.1016/J.Susc.2006.01.094  0.454
2006 Ley L, Ristein J, Meier F, Riedel M, Strobel P. Surface conductivity of the diamond: A novel transfer doping mechanism Physica B-Condensed Matter. 376: 262-267. DOI: 10.1016/J.Physb.2005.12.068  0.383
2006 Strobel P, Ristein J, Ley L, Seppelt K, Goldt IV, Boltalina O. Surface conductivity induced by fullerenes on diamond: Passivation and thermal stability Diamond and Related Materials. 15: 720-724. DOI: 10.1016/J.Diamond.2005.10.034  0.355
2006 Lauffer P, Jung A, Graupner R, Hirsch A, Ley L. Functionalization of single‐walled carbon nanotubes by aromatic molecules studied by scanning tunneling microscopy Physica Status Solidi B-Basic Solid State Physics. 243: 3213-3216. DOI: 10.1002/Pssb.200669125  0.323
2006 Gao KY, Speck F, Emtsev K, Seyller T, Ley L, Oswald M, Hansch W. Interface of atomic layer deposited Al2O3 on H‐terminated silicon Physica Status Solidi (a). 203: 2194-2199. DOI: 10.1002/Pssa.200566014  0.363
2005 Dettlaff-Weglikowska U, Skákalová V, Graupner R, Jhang SH, Kim BH, Lee HJ, Ley L, Park YW, Berber S, Tománek D, Roth S. Effect of SOCl2 treatment on electrical and mechanical properties of single-wall carbon nanotube networks. Journal of the American Chemical Society. 127: 5125-31. PMID 15810847 DOI: 10.1021/Ja046685A  0.321
2005 Gao KY, Seyller T, Emtsev KV, Ley L, Ciobanu F, Pensl G. ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere Materials Science Forum. 559-562. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.559  0.42
2005 Emtsev KV, Seyller T, Ley L, Tadich A, Broekman L, Huwald E, Riley JD, Leckey RCG. Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100) Materials Science Forum. 547-550. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.547  0.412
2005 Seyller T, Graupner R, Sieber N, Emtsev KV, Ley L, Tadich A, Riley JD, Leckey RCG. Hydrogen terminated 4H-SiC(1100) and (1120) surfaces studied by synchrotron x-ray photoelectron spectroscopy Physical Review B. 71: 245333. DOI: 10.1103/Physrevb.71.245333  0.358
2005 Tadich A, Broekman L, Riley J, Leckey R, Homolya S, Smith AE, Seyller T, Emtsev K, Ley L. Mapping disorder-order induced changes to the Fermi surface of Cu3Au using a new toroidal electron energy analyser Journal of Electron Spectroscopy and Related Phenomena. 144: 515-518. DOI: 10.1016/J.Elspec.2005.01.040  0.312
2005 Broekman L, Tadich A, Huwald E, Riley J, Leckey R, Seyller T, Emtsev K, Ley L. First results from a second generation toroidal electron spectrometer. Journal of Electron Spectroscopy and Related Phenomena. 144: 1001-1004. DOI: 10.1016/J.Elspec.2005.01.022  0.347
2005 Strobel P, Riedel M, Ristein J, Ley L, Boltalina O. Surface transfer doping of diamond by fullerene Diamond and Related Materials. 14: 451-458. DOI: 10.1016/J.Diamond.2004.12.051  0.368
2004 Strobel P, Riedel M, Ristein J, Ley L. Surface transfer doping of diamond Nature. 430: 439-441. PMID 15269764 DOI: 10.1038/Nature02751  0.417
2004 Püsche R, Hundhausen M, Ley L, Semmelroth K, Schmid F, Pensl G, Nagasawa H. Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy Materials Science Forum. 617-620. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.617  0.313
2004 Seyller T, Sieber N, Emtsev KV, Graupner R, Ley L, Tadich A, James D, Riley JD, Leckey RCG, Polcik M. The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC Materials Science Forum. 395-398. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.395  0.302
2004 Seyller T, Gao KY, Ley L, Pensl G, Ciobanu F, Tadich A, Riley JD, Leckey RCG. Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition Materials Science Forum. 1369-1372. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1369  0.342
2004 Ristein J, Riedel M, Ley L. Electrochemical Surface Transfer Doping The Mechanism Behind the Surface Conductivity of Hydrogen-Terminated Diamond Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1785797  0.392
2004 Riedel M, Ristein J, Ley L. Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum Physical Review B. 69: 125338. DOI: 10.1103/Physrevb.69.125338  0.366
2004 Püsche R, Hundhausen M, Ley L, Semmelroth K, Schmid F, Pensl G, Nagasawa H. Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy Journal of Applied Physics. 96: 5569-5575. DOI: 10.1063/1.1803924  0.342
2004 Riedel M, Ristein J, Ley L. The impact of ozone on the surface conductivity of single crystal diamond Diamond and Related Materials. 13: 746-750. DOI: 10.1016/J.Diamond.2003.11.094  0.384
2003 Holzinger M, Abraham J, Whelan P, Graupner R, Ley L, Hennrich F, Kappes M, Hirsch A. Functionalization of single-walled carbon nanotubes with (R-)oxycarbonyl nitrenes. Journal of the American Chemical Society. 125: 8566-80. PMID 12848565 DOI: 10.1021/Ja029931W  0.312
2003 Steeds JW, Evans GA, Furkert SA, Ley L, Hundhausen M, Schulze N, Pensl G. Identification of dumb-bell shaped interstitials in electron irradiated 6H SiC by photoluminescence spectroscopy Materials Science Forum. 305-308. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.305  0.34
2003 Takeuchi D, Riedel M, Ristein J, Ley L. Surface band bending and surface conductivity of hydrogenated diamond Physical Review B. 68: 41304. DOI: 10.1103/Physrevb.68.041304  0.416
2003 Sieber N, Seyller T, Ley L, James D, Riley JD, Leckey RCG, Polcik M. Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated 6H-SiC{0001} surfaces Physical Review B. 67. DOI: 10.1103/Physrevb.67.205304  0.414
2003 Gao KY, Seyller T, Ley L, Ciobanu F, Pensl G, Tadich A, Riley J, Leckey R. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) Applied Physics Letters. 83: 1830-1832. DOI: 10.1063/1.1609053  0.4
2003 Rezek B, Sauerer C, Nebel CE, Stutzmann M, Ristein J, Ley L, Snidero E, Bergonzo P. Fermi level on hydrogen terminated diamond surfaces Applied Physics Letters. 82: 2266-2268. DOI: 10.1063/1.1564293  0.43
2003 Stark T, Hergert F, Ley L. Tracing the Ti-silicide formation by in situ ellipsometric measurements Materials Science in Semiconductor Processing. 6: 77-83. DOI: 10.1016/S1369-8001(03)00074-X  0.311
2003 Seyller T, Sieber N, Stark T, Ley L, Zorman CA, Mehregany M. Stacking rearrangement at 6H-SiC(0 0 0 1) surfaces during thermal hydrogenation Surface Science. 532: 698-704. DOI: 10.1016/S0039-6028(03)00157-2  0.354
2003 Ristein J, Riedel M, Ley L, Takeuchi D, Okushi H. Band diagrams of intrinsic and p-type diamond with hydrogenated surfaces Physica Status Solidi (a) Applied Research. 199: 64-70. DOI: 10.1002/Pssa.200303814  0.426
2002 Sieber N, Seyller T, Graupner R, Ley L, Mikalo RP, Hoffmann P, Batchelor DR, Schmeisser D. Wet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEED Materials Science Forum. 717-720. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.717  0.318
2002 Sieber N, Seyller T, Ley L, Polcik M, James D, Riley JD, Leckey RCG. A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces Materials Science Forum. 713-716. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.713  0.355
2002 Herzog B, Rohmfeld S, Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G. Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy Materials Science Forum. 625-628. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.625  0.342
2002 Evans G, Steeds JW, Ley L, Hundhausen M, Schulze N, Pensl G. Identification of carbon interstitials in electron-irradiated 6H-SiC by use of a 13 C enriched specimen Physical Review B. 66: 35204. DOI: 10.1103/Physrevb.66.035204  0.334
2002 Walter S, Bernhardt J, Starke U, Heinz K, Maier F, Ristein J, Ley L. Geometry of the (2×1) reconstruction of diamond (111) Journal of Physics: Condensed Matter. 14: 3085-3092. DOI: 10.1088/0953-8984/14/12/301  0.362
2002 Sieber N, Stark T, Seyller T, Ley L, Zorman CA, Mehregany M. Origin of the split Si-H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation Applied Physics Letters. 80: 4726-4728. DOI: 10.1063/1.1488692  0.36
2002 Ristein J, Riedel M, Stammler M, Mantel BF, Ley L. Surface conductivity of nitrogen-doped diamond Diamond and Related Materials. 11: 359-364. DOI: 10.1016/S0925-9635(02)00022-5  0.386
2002 Stammler M, Eisenbeiß H, Ristein J, Neubauer J, Göbbels M, Ley L. Growth of high-quality homoepitaxial diamond films by HF-CVD Diamond and Related Materials. 11: 504-508. DOI: 10.1016/S0925-9635(01)00627-6  0.356
2002 Kinsky J, Graupner R, Stammler M, Ley L. Surface vibrations on clean, deuterated, and hydrogenated single crystal diamond(100) surfaces studied by high-resolution electron energy loss spectroscopy Diamond and Related Materials. 11: 365-370. DOI: 10.1016/S0925-9635(01)00577-5  0.37
2002 Ley L. Hydrogen and semiconductors: from surface to bulk and back Journal of Non-Crystalline Solids. 299: 1-1. DOI: 10.1016/S0022-3093(01)01169-3  0.344
2001 Maier F, Ristein J, Ley L. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces Physical Review B. 64: 165411. DOI: 10.1103/Physrevb.64.165411  0.33
2001 Ristein J, Riedel M, Maier F, Mantel BF, Stammler M, Ley L. Surface doping: a special feature of diamond Journal of Physics: Condensed Matter. 13: 8979-8987. DOI: 10.1088/0953-8984/13/40/314  0.392
2001 Feng PX, Riley JD, Leckey RCG, Ley L. MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates Journal of Physics D: Applied Physics. 34: 1293-1300. DOI: 10.1088/0022-3727/34/9/303  0.366
2001 Feng PX, Riley JD, Leckey RCG, Pigram PJ, Seyller T, Ley L. Surface, interface and bulk properties of GaAs(111)B treated by Se layers Journal of Physics D: Applied Physics. 34: 678-682. DOI: 10.1088/0022-3727/34/5/303  0.383
2001 Sieber N, Mantel BF, Seyller T, Ristein J, Ley L, Heller T, Batchelor DR, Schmeißer D. Electronic and chemical passivation of hexagonal 6H–SiC surfaces by hydrogen termination Applied Physics Letters. 78: 1216-1218. DOI: 10.1063/1.1351845  0.414
2001 Feng PX, Leckey RCG, Riley JD, Brack N, Pigram PJ, Hollering M, Ley L. Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface Journal of Applied Physics. 89: 710-717. DOI: 10.1063/1.1327606  0.433
2001 Mantel BF, Stammler M, Ristein J, Ley L. The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy Diamond and Related Materials. 10: 429-433. DOI: 10.1016/S0925-9635(00)00601-4  0.398
2001 Ristein J, Maier F, Riedel M, Stammer M, Ley L. Diamond surface conductivity experiments and photoelectron spectroscopy Diamond and Related Materials. 10: 416-422. DOI: 10.1016/S0925-9635(00)00555-0  0.361
2001 Maier F, Riedel M, Ristein J, Ley L. Spectroscopic investigations of diamond/hydrogen/metal and diamond/metal interfaces Diamond and Related Materials. 10: 506-510. DOI: 10.1016/S0925-9635(00)00535-5  0.317
2001 Sieber N, Mantel BF, Seyller T, Ristein J, Ley L. Hydrogenation of 6H-SiC as a surface passivation stable in air Diamond and Related Materials. 10: 1291-1294. DOI: 10.1016/S0925-9635(00)00529-X  0.419
2001 Feng P, Gard F, Riley JD, Pigram PJ, Leckey R, Seyller T, Ley L. Epitaxial growth and the electronic structure of MgSe on ZnSe/GaAs (001) Journal of Electron Spectroscopy and Related Phenomena. 114: 527-532. DOI: 10.1016/S0368-2048(00)00357-1  0.424
2001 Sieber N, Seyller T, Graupner R, Ley L, Mikalo R, Hoffmann P, Batchelor DR, Schmeißer D. PES and LEED study of hydrogen- and oxygen-terminated 6H-SiC(0 0 0 1) and (0 0 0 1) surfaces Applied Surface Science. 184: 278-283. DOI: 10.1016/S0169-4332(01)00508-6  0.407
2001 Popescu B, Hundhausen M, Ley L. Study of space-charge-limited currents in high-voltage TFTs based on a-Si:H Journal of Non-Crystalline Solids. 283: 155-161. DOI: 10.1016/S0022-3093(01)00422-7  0.303
2001 Ristein J, Riedel M, Maier F, Mantel BF, Stammler M, Ley L. Surface Conductivity of Diamond as a Function of Nitrogen Doping Physica Status Solidi (a). 186: 249-256. DOI: 10.1002/1521-396X(200108)186:2<249::Aid-Pssa249>3.0.Co;2-6  0.376
2000 Maier F, Riedel M, Mantel B, Ristein J, Ley L. Origin of Surface Conductivity in Diamond Physical Review Letters. 85: 3472-3475. PMID 11030924 DOI: 10.1103/Physrevlett.85.3472  0.358
2000 Rohmfeld S, Hundhausen M, Ley L, Zorman CA, Mehregany M. Raman spectroscopy on biaxially strained epitaxial layers of 3C-SiC on Si Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.595  0.313
2000 Püsche R, Rohmfeld S, Hundhausen M, Ley L. Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC Materials Science Forum. 583-586. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.583  0.302
2000 Sieber N, Hollering M, Ristein J, Ley L. Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001) Materials Science Forum. 391-394. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.391  0.332
2000 Hollering M, Sieber N, Maier F, Ristein J, Ley L, Riley JD, Leckey RCG, Leisenberger F, Netzer F. Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC Materials Science Forum. 387-390. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.387  0.304
2000 Schmidt JA, Hundhausen M, Ley L. Transport properties of a-Si1-xCx: H films investigated by the moving photocarrier grating technique Physical Review B - Condensed Matter and Materials Physics. 62: 13010-13015. DOI: 10.1103/Physrevb.62.13010  0.362
2000 Cui JB, Stammler M, Ristein J, Ley L. Role of hydrogen on field emission from chemical vapor deposited diamond and nanocrystalline diamond powder Journal of Applied Physics. 88: 3667-3673. DOI: 10.1063/1.1288163  0.315
2000 Cui JB, Ristein J, Stammler M, Janischowsky K, Kleber G, Ley L. Hydrogen termination and electron emission from CVD diamond surfaces: a combined secondary electron emission, photoelectron emission microscopy, photoelectron yield, and field emission study Diamond and Related Materials. 9: 1143-1147. DOI: 10.1016/S0925-9635(99)00279-4  0.344
2000 Mantel BF, Stammler M, Ristein J, Ley L. Fourier transform infrared spectroscopy of CH vibrational modes on a diamond (111) surface Diamond and Related Materials. 9: 1032-1035. DOI: 10.1016/S0925-9635(99)00247-2  0.369
2000 Cui JB, Ristein J, Ley L. Photoelectron emission characteristics of diamond near the band gap Diamond and Related Materials. 9: 1036-1040. DOI: 10.1016/S0925-9635(99)00236-8  0.398
2000 Stark T, Gutowski L, Herden M, Grünleitner H, Köhler S, Hundhausen M, Ley L. Ti-silicide formation during isochronal annealing followed by in situ ellipsometry Microelectronic Engineering. 55: 101-107. DOI: 10.1016/S0167-9317(00)00434-2  0.342
2000 Stark T, Grünleitner H, Hundhausen M, Ley L. Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements Thin Solid Films. 358: 73-79. DOI: 10.1016/S0040-6090(99)00699-9  0.312
2000 Feng PX, Riley JD, Leckey RCG, Pigram PJ, Hollering M, Ley L. Surface and bulk properties of GaAs(001) treated by selenium layers Surface Science. 468: 109-121. DOI: 10.1016/S0039-6028(00)00797-4  0.399
2000 Schmidt JA, Hundhausen M, Ley L. Transport properties of amorphous hydrogenated silicon–carbon alloys Journal of Non-Crystalline Solids. 694-698. DOI: 10.1016/S0022-3093(99)00787-5  0.339
2000 Ristein J, Maier F, Riedel M, Cui JB, Ley L. Surface Electronic Properties of Diamond Physica Status Solidi (a). 181: 65-76. DOI: 10.1002/1521-396X(200009)181:1<65::Aid-Pssa65>3.0.Co;2-Z  0.392
1999 Zhou SM, Hundhausen M, Stark T, Chen LY, Ley L. Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 144-149. DOI: 10.1116/1.581564  0.359
1999 Graupner R, Ristein J, Ley L, Jung C. Surface-sensitive K-edge absorption spectroscopy on clean and hydrogen-terminated diamond (111) and (100) surfaces Physical Review B. 60: 17023-17029. DOI: 10.1103/Physrevb.60.17023  0.349
1999 Cui JB, Ristein J, Ley L. Low-threshold electron emission from diamond Physical Review B. 60: 16135-16142. DOI: 10.1103/Physrevb.60.16135  0.398
1999 Cui JB, Ristein J, Ley L. Dehydrogenation And The Surface Phase Transition On Diamond (111) : Kinetics And Electronic Structure Physical Review B. 59: 5847-5856. DOI: 10.1103/Physrevb.59.5847  0.326
1999 Janischowsky K, Stammler M, Stöckel R, Ley L. Growth of high quality, large grain size, highly oriented diamond on Si (100) Applied Physics Letters. 75: 2094-2096. DOI: 10.1063/1.124927  0.375
1999 Cui JB, Graupner R, Ristein J, Ley L. Electron affinity and band bending of single crystal diamond (111) surface Diamond and Related Materials. 8: 748-753. DOI: 10.1016/S0925-9635(98)00309-4  0.445
1999 Janischowsky K, Stammler M, Ley L. High quality textured growth of oriented diamond thin films on Si (100) in a hot filament-CVD system Diamond and Related Materials. 8: 179-184. DOI: 10.1016/S0925-9635(98)00259-3  0.351
1999 Maier F, Graupner R, Hollering M, Hammer L, Ristein J, Ley L. The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study Surface Science. 443: 177-185. DOI: 10.1016/S0039-6028(99)01010-9  0.438
1999 Hollering M, Maier F, Sieber N, Stammler M, Ristein J, Ley L, Stampfl APJ, Riley JD, Leckey RCG, Leisenberger FP, Netzer FP. Electronic states of an ordered oxide on C-terminated 6H–SiC Surface Science. 442: 531-542. DOI: 10.1016/S0039-6028(99)00998-X  0.406
1999 Ley L, Mantel BF, Matura K, Stammler M, Janischowsky K, Ristein J. Infrared spectroscopy of C–D vibrational modes on diamond (100) surfaces Surface Science. 427: 245-249. DOI: 10.1016/S0039-6028(99)00273-3  0.354
1999 Ley L, Graupner R, Cui JB, Ristein J. Electronic properties of single crystalline diamond surfaces Carbon. 37: 793-799. DOI: 10.1016/S0008-6223(98)00273-5  0.424
1999 Rohmfeld S, Hundhausen M, Ley L. Influence of Stacking Disorder on the Raman Spectrum of 3C‐SiC Physica Status Solidi B-Basic Solid State Physics. 215: 115-119. DOI: 10.1002/(Sici)1521-3951(199909)215:1<115::Aid-Pssb115>3.0.Co;2-3  0.308
1998 Mattern B, Bassler M, Pensl G, Ley L. High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface Materials Science Forum. 375-378. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.375  0.311
1998 Hollering M, Mattern B, Maier F, Ley L, Stampfl APJ, Xue J, Riley JD, Leckey RCG. Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface Materials Science Forum. 331-334. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.331  0.355
1998 Cui JB, Ristein J, Ley L. Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) Surface Physical Review Letters. 81: 429-432. DOI: 10.1103/Physrevlett.81.429  0.339
1998 Hollering M, Bernhardt J, Schardt J, Ziegler A, Graupner R, Mattern B, Stampfl APJ, Starke U, Heinz K, Ley L. Electronic and atomic structure of the 6H-SiC(0001̄) surface studied by ARPES, LEED, and XPS Physical Review B. 58: 4992-5000. DOI: 10.1103/Physrevb.58.4992  0.429
1998 Graupner R, Maier F, Ristein J, Ley L, Jung C. High-Resolution Surface-Sensitive C 1S Core-Level Spectra Of Clean And Hydrogen-Terminated Diamond (100) And (111) Surfaces Physical Review B. 57: 12397-12409. DOI: 10.1103/Physrevb.57.12397  0.398
1998 Ristein J, Stief RT, Ley L, Beyer W. A comparative analysis of a-C:H by infrared spectroscopy and mass selected thermal effusion Journal of Applied Physics. 84: 3836-3847. DOI: 10.1063/1.368563  0.349
1998 Stöckel R, Stammler M, Janischowsky K, Ley L, Albrecht M, Strunk HP. Diamond nucleation under bias conditions Journal of Applied Physics. 83: 531-539. DOI: 10.1063/1.366667  0.354
1998 Ristein J, Stein W, Ley L. Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: A contactless unipolar transport experiment Diamond and Related Materials. 7: 626-631. DOI: 10.1016/S0925-9635(97)00258-6  0.377
1998 Stöckel R, Janischowsky K, Stammler M, Ley L, Albrecht M, Strunk H. Carbon nanostructures — Diamond nucleation centers formed during the bias pretreatment Diamond and Related Materials. 7: 147-151. DOI: 10.1016/S0925-9635(97)00207-X  0.326
1998 Schäfer J, Ristein J, Miyazaki S, Ley L. Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy Applied Surface Science. 123: 11-16. DOI: 10.1016/S0169-4332(97)00497-2  0.424
1998 Xue JY, Stampfl APJ, Wolfframm D, Evans DA, Hollering M, Ley L, Riley JD, Leckey RCG. The surface valence band structure of the two phases of ZnSe(100) Surface Science. 401. DOI: 10.1016/S0039-6028(98)00079-X  0.39
1998 Foo JAC, Stampfl APJ, Mattern B, Ziegler A, Hollering M, Ley L, Riley JD, Leckey RCG. The Fermi surface dimensions of disordered Cu3Au as determined by angle resolved photoemission spectroscopy Solid State Communications. 107: 385-390. DOI: 10.1016/S0038-1098(98)00279-8  0.355
1998 Pócsik I, Hundhausen M, Koós M, Ley L. Origin of the D peak in the Raman spectrum of microcrystalline graphite Journal of Non-Crystalline Solids. 227: 1083-1086. DOI: 10.1016/S0022-3093(98)00349-4  0.307
1998 Lormes W, Hundhausen M, Ley L. Time resolved photoluminescence of amorphous hydrogenated carbon Journal of Non-Crystalline Solids. 227: 570-573. DOI: 10.1016/S0022-3093(98)00272-5  0.301
1998 Hollering M, Mattern B, Maier F, Ley L, Stampfl APJ, Xue J, Riley JD, Leckey RCG. Electronic and atomic structure of the C-terminated 6H-SiC surface Materials Science Forum. 264: 331-334.  0.324
1997 Schäfer J, Ristein J, Miyazaki S, Ley L. Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H) Journal of Vacuum Science and Technology. 15: 408-414. DOI: 10.1116/1.580499  0.39
1997 Ristein J, Stein W, Ley L. Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield spectroscopy Physical Review Letters. 78: 1803-1806. DOI: 10.1103/Physrevlett.78.1803  0.313
1997 Graupner R, Hollering M, Ziegler A, Ristein J, Ley L, Stampfl A. Dispersions of surface states on diamond (100) and (111) Physical Review B. 55: 10841-10847. DOI: 10.1103/Physrevb.55.10841  0.405
1997 Hollering M, Ziegler A, Graupner R, Mattern B, Ley L, Stampfl APJ, Riley JD, Leckey RCG. Angle resolved photoemission and the band structure of 6H-SiC Diamond and Related Materials. 6: 1358-1361. DOI: 10.1016/S0925-9635(97)00092-7  0.427
1997 Sieber N, Hollering M, Ley L. Surface chemistry of 6H-SiC(000) after reactive ion etching Diamond and Related Materials. 6: 1451-1455. DOI: 10.1016/S0925-9635(97)00079-4  0.364
1997 Stammler M, Stöckel R, Ley L, Albrecht M, Strunk H. Diamond nucleation on silicon during bias treatment in chemical vapour deposition as analysed by electron microscopy Diamond and Related Materials. 6: 747-751. DOI: 10.1016/S0925-9635(96)00730-3  0.339
1997 Schäfer J, Ristein J, Ley L. Electronic and structural properties of the interface between c-Si(111) and diamond-like carbon Diamond and Related Materials. 6: 730-735. DOI: 10.1016/S0925-9635(96)00622-X  0.432
1997 Miyazaki S, Schäfer J, Ristein J, Ley L. Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H Applied Surface Science. 32-36. DOI: 10.1016/S0169-4332(97)80047-5  0.446
1997 Miyazaki S, Nishimura H, Fukuda M, Ley L, Ristein J. Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces Applied Surface Science. 113114: 585-589. DOI: 10.1016/S0169-4332(96)00805-7  0.398
1997 Zhang Y, Xue JY, Foo JAC, Stampfl APJ, Wolfframm D, Evans DA, Riley JD, Leckey RCG, Ziegler A, Mattern B, Graupner R, Hollering M, Denecke R, Ley L. The valence band structure of the ZnSe{001}-(2 × 1) surface as determined by angle-resolved photoemission spectroscopy Surface Science. 377: 288-293. DOI: 10.1016/S0039-6028(96)01401-X  0.416
1996 Con Foo JA, Stampfl AP, Ziegler A, Mattern B, Hollering M, Denecke R, Ley L, Riley JD, Leckey RC. Direct k-space photoemission imaging of the Fermi surface of Cu. Physical Review. B, Condensed Matter. 53: 9649-9652. PMID 9982520 DOI: 10.1103/Physrevb.53.9649  0.325
1996 Schäfer J, Ristein J, Graupner R, Ley L, Stephan U, Frauenheim T, Veerasamy VS, Amaratunga GA, Weiler M, Ehrhardt H. Photoemission study of amorphous carbon modifications and comparison with calculated densities of states. Physical Review. B, Condensed Matter. 53: 7762-7774. PMID 9982222 DOI: 10.1103/Physrevb.53.7762  0.341
1996 Ley L, Ristein J, Schäfer J, Miyazaki S. Near‐surface dopant passivation after wet‐chemical preparation Journal of Vacuum Science & Technology B. 14: 3008-3012. DOI: 10.1116/1.589056  0.409
1996 Ley L, Teuschler T, Mahr K, Miyazaki S, Hundhausen M. Kinetics of field-induced oxidation of hydrogen-terminated Si(111) Journal of Vacuum Science & Technology B. 14: 2845-2849. DOI: 10.1116/1.588843  0.314
1996 Teuschler T, Mahr K, Miyazaki S, Hundhausen M, Ley L. Nanometer‐scale modification of tribomechanical properties of Si(111):H surfaces performed and investigated by a conducting‐probe scanning force microscope Journal of Vacuum Science & Technology B. 14: 1268-1271. DOI: 10.1116/1.588529  0.304
1996 Stöckel R, Janischowsky K, Rohmfeld S, Ristein J, Hundhausen M, Ley L. Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films Journal of Applied Physics. 79: 768-775. DOI: 10.1063/1.360823  0.315
1996 Miyazaki S, Schäfer J, Ristein J, Ley L. Surface Fermi level position of hydrogen passivated Si(111) surfaces Applied Physics Letters. 68: 1247-1249. DOI: 10.1063/1.115941  0.418
1996 Heinrich G, Grögler T, Rosiwal SM, Singer RF, Stöckel R, Ley L. The influence of diamond chemical vapour deposition coating parameters on the microstructure and properties of titanium substrates Diamond and Related Materials. 5: 304-307. DOI: 10.1016/0925-9635(95)00378-9  0.35
1996 Sto¨ckel R, Janischowsky K, Rohmfeld S, Ristein J, Hundhausen M, Ley L. Diamond growth during bias pre-treatment in the microwave CVD of diamond Diamond and Related Materials. 5: 321-325. DOI: 10.1016/0925-9635(95)00355-X  0.354
1996 Cai YQ, Leckey RCG, Riley JD, Stampfl APJ, Ley L. Surface states and surface umklapp transitions in angle-resolved photoemission from a GaAs(111)-2×2 surface Journal of Electron Spectroscopy and Related Phenomena. 80: 201-204. DOI: 10.1016/0368-2048(96)02956-8  0.36
1996 Schäfer J, Ristein J, Ley L, Stephan U, Frauenheim T. The density of states of ta-C, ta-C:H and a-C:H as determined by X-ray excited photoelectron spectroscopy and molecular dynamics calculation Journal of Non-Crystalline Solids. 198200: 641-645. DOI: 10.1016/0022-3093(95)00780-6  0.348
1996 Hundhausen M, Nagy A, Ley L. High field transport in the inversion layer of amorphous silicon thin film transistors Journal of Non-Crystalline Solids. 198200: 230-233. DOI: 10.1016/0022-3093(95)00718-0  0.3
1996 Foo JAC, Tkatchenko S, Stampfl APJ, Ziegler A, Mattern B, Hollering M, Denecke R, Ley L, Riley JD, Leckey RCG. Fermi Surface of Disordered Cu3Au as Determined by Angle-resolved Photoemission Surface and Interface Analysis. 24: 535-538. DOI: 10.1002/(Sici)1096-9918(19960916)24:9<535::Aid-Sia168>3.0.Co;2-#  0.323
1995 Ristein J, Appelt C, Gertkemper T, Ley L. The Influence of Chemical Annealing on the Electronic Surface Properties of Amorphous Silicon Solid State Phenomena. 775-790. DOI: 10.4028/Www.Scientific.Net/Ssp.44-46.775  0.381
1995 Weigelt G, Hundhausen M, Ley L. Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect? Solid State Phenomena. 495-504. DOI: 10.4028/Www.Scientific.Net/Ssp.44-46.495  0.3
1995 Ristein J, Schäfer J, Ley L. Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments Diamond and Related Materials. 4: 508-516. DOI: 10.1016/0925-9635(94)05272-7  0.379
1995 Ley L, Wang Y, Van VN, Fisson S, Souche D, Vuye G, Rivory J. Initial stages in the formation of PtSi on Si(111) as followed by photoemission and spectroscopic ellipsometry Thin Solid Films. 270: 561-566. DOI: 10.1016/0040-6090(95)06860-0  0.307
1995 Stampfl APJ, Foo JAC, Leckey RCG, Riley JD, Denecke R, Ley L. Mapping the Fermi surface of Cu using ARUPS Surface Science. 1272-1276. DOI: 10.1016/0039-6028(95)00340-1  0.341
1994 Teuschler T, Hundhausen M, Eckstein R, Ley L. Cross‐sectional scanning tunneling and scanning force microscopy of amorphous hydrogenated silicon pn‐doping superlattices in nitrogen and in air Journal of Vacuum Science & Technology B. 12: 2440-2442. DOI: 10.1116/1.587779  0.367
1994 Ley L. The localized nature of screening in covalently bonded amorphous semiconductors Philosophical Magazine Part B. 70: 417-427. DOI: 10.1080/01418639408240217  0.34
1994 Teuschler T, Hundhausen M, Ley L. Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices Superlattices and Microstructures. 16: 271-274. DOI: 10.1016/S0749-6036(09)80013-X  0.379
1994 Graupner R, Stöckel R, Janischowski K, Ristein J, Hundhausen M, Ley L. The influence of surface treatment on the electronic structure of CVD diamond films Diamond and Related Materials. 3: 891-895. DOI: 10.1016/0925-9635(94)90294-1  0.449
1994 Schäfer J, Ristein J, Ley L. Electronic density of states and deep defects of hydrogenated amorphous carbon (a-C:H) Diamond and Related Materials. 3: 861-864. DOI: 10.1016/0925-9635(94)90286-0  0.391
1994 Graupner R, Ristein J, Ley L. Photoelectron spectroscopy of clean and hydrogen-exposed diamond (111) surfaces Surface Science. 320: 201-207. DOI: 10.1016/0039-6028(94)00499-4  0.385
1994 Zhang XD, Riley JD, Leckey RCG, Ley L. Mapping the conduction band structure of GaAs along the ΓΔX direction Solid State Communications. 89: 109-112. DOI: 10.1016/0038-1098(94)90386-7  0.349
1993 Cai YQ, Riley JD, Leckey RCG, Faul J, Ley L. Angle-resolved photoemission from a GaAs (1-bar 1-bar 1-bar)-2 x 2 surface: Off-normal emission study. Physical Review B. 48: 18079-18087. PMID 10008446 DOI: 10.1103/Physrevb.48.18079  0.403
1993 Graf W, Leihkamm K, Ristein J, Ley L. Signature of the Weak Bond-Dangling Bond Conversion Process in a-Si:H as Seen by Total Photoelectron Yield Spectroscopy Mrs Proceedings. 297. DOI: 10.1557/Proc-297-207  0.423
1993 Zhang XD, Riley JD, Leckey RCG, Kemister G, Denecke R, Faul J, Ley L. Angle‐resolved photoemission and band structure of the alloy Al0.5Ga0.5As compared to that of the superlattice [(AlAs)2/(GaAs)2]10 Journal of Vacuum Science and Technology. 11: 341-344. DOI: 10.1116/1.578735  0.309
1993 Leckey R, Riley J, Cai Y, Faul J, Ley L. How Successfully Does Angle-resolved Photoemission Determine the Band Structure of Semiconductors? Australian Journal of Physics. 46: 717. DOI: 10.1071/Ph930717  0.371
1993 Schäfer J, Ristein J, Ley L, Ibach H. High sensitivity photoelectron yield spectroscopy with computer‐calculated electron optics Review of Scientific Instruments. 64: 653-658. DOI: 10.1063/1.1144192  0.327
1993 Stöckel R, Graupner R, Janischowsky K, Xu S, Ristein J, Hundhausen M, Ley L. Initial stages in the growth of polycrystalline diamond on silicon Diamond and Related Materials. 2: 1467-1472. DOI: 10.1016/0925-9635(93)90014-S  0.347
1993 Cai YQ, Leckey RCG, Riley JD, Denecke R, Faul J, Ley L. On the decapping of As4-capped GaAs(111) surfaces: An angle-resolved core-level photoemission study Journal of Electron Spectroscopy and Related Phenomena. 61: 275-290. DOI: 10.1016/0368-2048(93)80020-M  0.37
1993 Xu S, Hundhausen M, Ristein J, Yan B, Ley L. Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD Journal of Non-Crystalline Solids. 164: 1127-1130. DOI: 10.1016/0022-3093(93)91197-B  0.354
1993 Schäfer J, Ristein J, Ley L. Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy Journal of Non-Crystalline Solids. 1123-1126. DOI: 10.1016/0022-3093(93)91196-A  0.406
1993 Plass MF, Ristein J, Ley L. Electronic and structural properties of the a-Si:H/a-SiNX:H interface☆ Journal of Non-Crystalline Solids. 829-832. DOI: 10.1016/0022-3093(93)91125-M  0.41
1993 Nagy A, Hundhausen M, Ley L, Brunst G, Holzenkämpfer E. Field enhanced conductivity in a-Si:H thin film transistors Journal of Non-Crystalline Solids. 164: 529-532. DOI: 10.1016/0022-3093(93)90606-X  0.383
1993 Haken U, Hundhausen M, Ley L. Carrier mobility and lifetime in a-Si:H determined by the moving grating technique Journal of Non-Crystalline Solids. 497-500. DOI: 10.1016/0022-3093(93)90598-R  0.318
1993 Graf W, Wolf M, Leihkamm K, Ristein J, Ley L. Light-induced transient changes of the occupied density of defect states of a-Si:H Journal of Non-Crystalline Solids. 195-198. DOI: 10.1016/0022-3093(93)90524-2  0.355
1993 Gertkemper T, Ristein J, Ley L. In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy Journal of Non-Crystalline Solids. 123-126. DOI: 10.1016/0022-3093(93)90507-T  0.423
1991 Gonze X, Sporken R, Vigneron JP, Caudano R, Ghijsen J, Johnson RL, Ley L, Richter HW. Electronic structure of antimony from density-functional calculations and angle-resolved photoemission. Physical Review. B, Condensed Matter. 44: 11023-11028. PMID 9999219 DOI: 10.1103/Physrevb.44.11023  0.383
1991 Santos PV, Hundhausen M, Ley L, Viczian C. Structure of interfaces in a‐Si: H/a‐SiNx: H superlattices Journal of Applied Physics. 69: 778-785. DOI: 10.1063/1.347364  0.337
1991 Teuschler T, Hundhausen M, Ley L. Individual electronic defect states in a-Si:H/a-SiNx:H double barrier structures Journal of Non-Crystalline Solids. 1107-1110. DOI: 10.1016/S0022-3093(05)80316-3  0.373
1991 Aljishi S, Jin S, Ley L. Defects and disorder broadened band tails in compensated hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 387-390. DOI: 10.1016/S0022-3093(05)80137-1  0.382
1991 Jin S, Aljishi S, Ley L. Near-surface defects in amorphous semiconductors related to hydrogen incorporation Journal of Non-Crystalline Solids. 327-330. DOI: 10.1016/S0022-3093(05)80122-X  0.413
1990 Aljishi S, Jin S, Ley L, Wagner S. Thermal equilibration of surface defects in hydrogenated amorphous silicon-germanium alloys. Physical Review Letters. 65: 629-632. PMID 10042972 DOI: 10.1103/Physrevlett.65.629  0.396
1990 Jin S, Ley L. Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H Mrs Proceedings. 209. DOI: 10.1557/Proc-209-403  0.322
1990 Aljishi S, Cohen JD, Ley L. Study of Temperature and Light Bias Effects on the Occupied Near Surface Defect Density in Hydrogenated Amorphous Silicon Mrs Proceedings. 192. DOI: 10.1557/Proc-192-757  0.407
1990 Aljishi S, Jin S, Ley L, Wagner S. Thermal Equilibration Between Band Tail and Near Surface Defect States in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys Mrs Proceedings. 192. DOI: 10.1557/Proc-192-195  0.39
1990 Aljishi S, Cohen JD, Jin S, Ley L. Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys Mrs Proceedings. 192: 157. DOI: 10.1557/Proc-192-157  0.346
1990 Stampfl A, Kemister G, Leckey RCG, Riley JD, Orders PJ, Usher B, Hillebrecht FU, Ley L. Effect of strain on the band structure of InGaAs Physica Scripta. 41: 617-620. DOI: 10.1088/0031-8949/41/4/053  0.321
1989 Fang R-, Ley L. Natural and actual valence-band discontinuities in the a-Si/a-Si1-xCx:H system: A photoemission study. Physical Review B. 40: 3818-3829. PMID 9992351 DOI: 10.1103/Physrevb.40.3818  0.349
1989 Hillebrecht FU, Fraxedas J, Ley L, Trodahl HJ, Zaanen J, Braun W, Mast M, Petersen H, Schaible M, Bourne LC, Pinsukanjana P, Zettl A. Experimental electronic structure of Bi2CaSr2Cu2O8+ delta. Physical Review. B, Condensed Matter. 39: 236-242. PMID 9947144 DOI: 10.1103/Physrevb.39.236  0.356
1989 Aljishi S, Jin S, Stutzmann M, Ley L. Electronic and Structural Characterization of the Near Surface Layer and the Bulk in νc-Si:H Prepared with Hydrogen dilution Mrs Proceedings. 164: 51. DOI: 10.1557/Proc-164-51  0.417
1989 Aljishi S, Shu J, Ley L. The Density of States in Undoped and Doped Amorphous Silicon-Germanium Alloys Determined through Photoyield Spectroscopy Mrs Proceedings. 149: 125. DOI: 10.1557/Proc-149-125  0.406
1989 Stampfl A, Kemister G, Leckey RCG, Riley JD, Hillebrecht FU, Ehlers DH, Ley L. Band structure of InGaAs Journal of Vacuum Science and Technology. 7: 2525-2531. DOI: 10.1116/1.575791  0.326
1989 Santos PV, Ley L. Phonons in amorphous superlattices Superlattices and Microstructures. 5: 43-50. DOI: 10.1016/0749-6036(89)90066-9  0.305
1989 Arce R, Ley L, Hundhausen M. Random telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures Journal of Non-Crystalline Solids. 114: 696-697. DOI: 10.1016/0022-3093(89)90693-5  0.327
1989 Aljishi S, Cohen JD, Ley L. Energy distribution and thermal broadening of band tail states in doped and undoped hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 114: 247-249. DOI: 10.1016/0022-3093(89)90126-9  0.401
1989 Ley L. Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy Journal of Non-Crystalline Solids. 114: 238-243. DOI: 10.1016/0022-3093(89)90124-5  0.405
1988 Winer K, Hirabayashi I, Ley L. Exponential conduction-band tail in P-doped a-Si:H. Physical Review Letters. 60: 2697-2700. PMID 10038425 DOI: 10.1103/Physrevlett.60.2697  0.332
1988 Winer K, Hirabayashi I, Ley L. Distribution of occupied near-surface band-gap states in a-Si:H. Physical Review B. 38: 7680-7693. PMID 9945495 DOI: 10.1103/Physrevb.38.7680  0.43
1988 Bell FG, Ley L. Photoemission study of SiOx (0 <= x <= 2) alloys. Physical Review B. 37: 8383-8393. PMID 9944177 DOI: 10.1103/Physrevb.37.8383  0.411
1988 Winer K, Ley L. Effects of oxidation on surface band-gap states in a-Si:H. Physical Review B. 37: 8363-8369. PMID 9944174 DOI: 10.1103/Physrevb.37.8363  0.401
1988 Winer K, Ley L. Photoemission study of near-surface band gap states in a-Si:H Journal of Vacuum Science & Technology B. 6: 1165-1169. DOI: 10.1116/1.584272  0.421
1988 Leckey R, Riley JD, Johnson RL, Ley L, Ditchek B. Surface chemical shifts and photoelectron diffraction in CoSi2 Journal of Vacuum Science and Technology. 6: 63-69. DOI: 10.1116/1.574970  0.384
1987 Ley L, Taniguchi M, Ghijsen J, Johnson RL, Fujimori A. Manganese-derived partial density of states in Cd 1 − x Mn x Te Physical Review B. 35: 2839-2843. PMID 9941763 DOI: 10.1103/Physrevb.35.2839  0.332
1987 Koblinger O, Mebert J, Dittrich E, Döttinger S, Eisenmenger W, Santos PV, Ley L. Phonon stop bands in amorphous superlattices Physical Review B. 35: 9372-9375. PMID 9941357 DOI: 10.1103/Physrevb.35.9372  0.337
1987 Hundhausen M, Santos P, Ley L, Habraken F, Beyer W, Primig R, Gorges G. Characterization of superlattices based on amorphous silicon Journal of Applied Physics. 61: 556-560. DOI: 10.1063/1.338258  0.35
1987 Bell FG, Ley L. Photoemission in SiOx alloys Journal of Non-Crystalline Solids. 1007-1010. DOI: 10.1016/0022-3093(87)90242-0  0.375
1987 Santos PV, Ley L, Mebert J, Koblinger O. Frequency gaps for zone-folded acoustic phonons in amorphous superlattices Journal of Non-Crystalline Solids. 859-862. DOI: 10.1016/0022-3093(87)90206-7  0.349
1987 Winer K, Ley L. Surface states and the intrinsic valence band tail in a-Si:H Journal of Non-Crystalline Solids. 703-706. DOI: 10.1016/0022-3093(87)90166-9  0.409
1987 Walloch F, Ley L. Density of gap states in a-Si:H determined by spectrally resolved low temperature IR-photoconductivity Journal of Non-Crystalline Solids. 699-702. DOI: 10.1016/0022-3093(87)90165-7  0.396
1987 Hirabayashi I, Winer K, Ley L. Photomodulation of the photoelectric yield from a-Si:H Journal of Non-Crystalline Solids. 87-90. DOI: 10.1016/0022-3093(87)90020-2  0.391
1986 Straub D, Ley L, Himpsel FJ. Inverse-photoemission study of unoccupied electronic states in Ge and Si: Bulk energy bands. Physical Review. B, Condensed Matter. 33: 2607-2614. PMID 9938600 DOI: 10.1103/Physrevb.33.2607  0.405
1986 Richter HW, Barth J, Ghijsen J, Johnson RL, Ley L, Riley JD, Sporken R. Summary Abstract: Surface states at the (110) surface of InAs and InSb and the growth of AlAs at submonolayer coverage of Al studied by angle‐resolved photoelectron spectroscopy Journal of Vacuum Science & Technology B. 4: 900-902. DOI: 10.1116/1.583515  0.337
1986 Santos P, Hundhausen M, Ley L. Observation of folded-zone acoustical phonons by Raman scattering in amorphous Si-SiNx superlattices Physical Review B. 33: 1516-1518. DOI: 10.1103/Physrevb.33.1516  0.326
1985 Santos P, Hundhausen M, Ley L. Experimental evidence for phonon folding in compositional amorphous superlattices Journal of Non-Crystalline Solids. 1069-1072. DOI: 10.1016/0022-3093(85)90842-7  0.352
1985 Hundhausen M, Ley L. Persistent photoconductivity in doping-modulated amorphous silicon superlattices Journal of Non-Crystalline Solids. 1051-1060. DOI: 10.1016/0022-3093(85)90839-7  0.361
1984 Ley L, Kaercher R, Johnson RL. Non-Stoichiometry and the Electronic Structure of Amorphous Silicon Nitride Mrs Proceedings. 38. DOI: 10.1557/Proc-38-309  0.33
1984 Ley L, Kärcher R, Johnson RL. Localized States at the Conduction-Band Edge of Amorphous Silicon Nitride Detected by Resonance Photoemission Physical Review Letters. 53: 710-713. DOI: 10.1103/Physrevlett.53.710  0.382
1984 Hundhausen M, Ley L, Carius R. Carrier recombination times in amorphous-silicon doping superlattices Physical Review Letters. 53: 1598-1601. DOI: 10.1103/Physrevlett.53.1598  0.308
1984 Kärcher R, Ley L, Johnson RL. Electronic structure of hydrogenated and unhydrogenated amorphous Si N x ( 0 ≤ x ≤ 1 . 6 ) : A photoemission study Physical Review B. 30: 1896-1910. DOI: 10.1103/Physrevb.30.1896  0.376
1984 Ley L. Chapter 12 Photoelectron Emission Studies Semiconductors and Semimetals. 21: 385-426. DOI: 10.1016/S0080-8784(08)62920-8  0.418
1983 Goodman NB, Ley L, Bullett DW. Valence-band structures of phosphorus allotropes Physical Review B. 27: 7440-7450. DOI: 10.1103/Physrevb.27.7440  0.325
1983 Wang ZP, Ley L, Cardona M. Infrared spectroscopy of amorphous hydrogenated GaAs, GaP, GaSb: Evidence for GaHGa bridges Physica B-Condensed Matter. 968-970. DOI: 10.1016/0378-4363(83)90709-X  0.388
1983 Reichardt J, Johnson RL, Ley L. Spatial charge fluctuations in amorphous silicon Physica B-Condensed Matter. 877-879. DOI: 10.1016/0378-4363(83)90681-2  0.349
1983 Kärcher R, Wang ZP, Ley L. Electronic structure of amorphous and microscrystalline a-GaAs(:H) Journal of Non-Crystalline Solids. 629-632. DOI: 10.1016/0022-3093(83)90662-2  0.426
1983 Kärcher R, Johnson RL, Ley L. Photoemission study of hydrogenated and unhydrogenated amorphous SiNx 0 ⩽ x ⩽ 2) Journal of Non-Crystalline Solids. 593-596. DOI: 10.1016/0022-3093(83)90653-1  0.368
1983 Reichardt J, Ley L, Johnson RL. Band edges, fermi level position, and hydrogen concentration in surface near regions of a-Si:H Journal of Non-Crystalline Solids. 329-332. DOI: 10.1016/0022-3093(83)90587-2  0.416
1983 Griep S, Ley L. Direct spectroscopic determination of the distribution of occupied gap states in a-Si:H Journal of Non-Crystalline Solids. 253-256. DOI: 10.1016/0022-3093(83)90569-0  0.402
1982 Wang ZP, Ley L, Cardona M. Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges Physical Review B. 26: 3249-3258. DOI: 10.1103/Physrevb.26.3249  0.342
1982 Richter H, Ley L. Growth Of Plasma-Transport Microcrystalline Silicon As Studied By In-Situ Raman Spectroscopy Le Journal De Physique Colloques. 43. DOI: 10.1051/Jphyscol:1982134  0.301
1982 Kärcher R, Ley L. Photoemission spectra of hydrogenated and oxidized amorphous silicon Solid State Communications. 43: 415-418. DOI: 10.1016/0038-1098(82)91159-0  0.385
1981 Gruntz KJ, Ley L, Johnson RL. Photoelectron spectra of fluorinated amorphous silicon ( a -Si: F) Physical Review B. 24: 2069-2080. DOI: 10.1103/Physrevb.24.2069  0.347
1981 Richter H, Ley L. Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °C Journal of Applied Physics. 52: 7281-7286. DOI: 10.1063/1.328715  0.318
1981 Richter H, Ley L. Photoemission Studies Of The Transition From Amorphous To Microcrystalline Silicon Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:1981455  0.38
1981 Ley L, Richter H, Kärcher R, Johnson RL, Reichardt J. SURFACE PROPERTIES OF a-Si : H AND a-Si : F INVESTIGATED BY PHOTOELECTRON SPECTROSCOPY Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:19814165  0.362
1981 Richter H, Wang ZP, Ley L. The one phonon Raman spectrum in microcrystalline silicon Solid State Communications. 39: 625-629. DOI: 10.1016/0038-1098(81)90337-9  0.336
1981 Liang PH, Fang CJ, Jiang DS, Wagner P, Ley L. Ultrashort laser-pulse annealing of hydrogenated amorphous silicon Applied Physics A. 26: 39-43. DOI: 10.1007/Bf01197676  0.389
1980 Gruntz KJ, Ley L, Cardona M, Johnson R, Harbeke G, Roedern Bv. Photoemission spectroscopy of amorphous hydrogenated germanium Journal of Non-Crystalline Solids. 453-458. DOI: 10.1016/0022-3093(80)90636-5  0.375
1980 Fang CJ, Gruntz KJ, Ley L, Cardona M, Demond FJ, Müller G, Kalbitzer S. The hydrogen content of a-Ge:H and a-Si:H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques Journal of Non-Crystalline Solids. 255-260. DOI: 10.1016/0022-3093(80)90603-1  0.331
1980 Shanks H, Fang CJ, Ley L, Cardona M, Demond FJ, Kalbitzer S. Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon Physica Status Solidi B-Basic Solid State Physics. 100: 43-56. DOI: 10.1002/Pssb.2221000103  0.383
1979 Ludeke R, Ley L. GaAs surface states observed by x‐ray photoemission Journal of Vacuum Science and Technology. 16: 1300-1301. DOI: 10.1116/1.570145  0.376
1979 Roedern Bv, Ley L, Cardona M, Smith FW. Photoemission studies on in situ prepared hydrogenated amorphous silicon films Philosophical Magazine Part B. 40: 433-450. DOI: 10.1080/01418637908226768  0.395
1979 Roedern Bv, Ley L, Cardona M. Spectroscopic determination of the position of the ferm-level in doped amorphous hydrogenated silicon Solid State Communications. 29: 415-417. DOI: 10.1016/0038-1098(79)91207-9  0.402
1979 Grandke T, Cardona M, Ley L. Temperature effects on valence bands in semiconducting lead chalcogenides Solid State Communications. 32: 353-356. DOI: 10.1016/0038-1098(79)90963-3  0.348
1978 Grandke T, Ley L, Cardona M. Angle-resolved uv photoemission and electronic band structures of the lead chalcogenides Physical Review B. 18: 3847-3871. DOI: 10.1103/Physrevb.18.3847  0.356
1978 Ludeke R, Ley L, Ploog K. Valence and core level photoemission spectra of AlxGa1−xAs Solid State Communications. 28: 57-60. DOI: 10.1016/0038-1098(78)90327-7  0.317
1978 Kowalczyk SP, Apai G, Kaindl G, McFeely FR, Ley L, Shirley DA. An X-ray photoemission investigation of the density of states of β′ -NiAl☆ Solid State Communications. 25: 847-851. DOI: 10.1016/0038-1098(78)90284-3  0.371
1977 Roedern Bv, Ley L, Cardona M. Photoelectron Spectra of Hydrogenated Amorphous Silicon Physical Review Letters. 39: 1576-1580. DOI: 10.1103/Physrevlett.39.1576  0.343
1977 Grandke T, Ley L, Cardona M. Valence Band Structure of PbS from Angle-Resolved Photoemission Physical Review Letters. 38: 1033-1036. DOI: 10.1103/Physrevlett.38.1033  0.333
1977 Grandke T, Ley L. Angular-resolved uv photoemission and the band structure of GeS Physical Review B. 16: 832-842. DOI: 10.1103/Physrevb.16.832  0.355
1977 Ley L, Dabbousi OB, Kowalczyk SP, McFeely FR, Shirley DA. X-RAY PHOTOEMISSION SPECTRA OF THE VALENCE BANDS OF THE 3d TRANSITION METALS, Sc TO Fe Physical Review B. 16: 5372-5380. DOI: 10.1103/Physrevb.16.5372  0.308
1977 Shirley DA, Martin RL, Kowalczyk SP, McFeely FR, Ley L. Core-electron binding energies of the first thirty elements Physical Review B. 15: 544-552. DOI: 10.1103/Physrevb.15.544  0.302
1977 Williams RH, McCanny JV, Murray RB, Ley L, Kemeny PC. The electronic band structure of indium selenide: Photoemission and theory Journal of Physics C: Solid State Physics. 10: 1223-1230. DOI: 10.1088/0022-3719/10/8/023  0.394
1977 Grandke T, Ley L, Cardona M. Angular resolved photoemission from PbS (100) for 16.85 eV and 21.22 eV excitation energy Solid State Communications. 23: 897-900. DOI: 10.1016/0038-1098(77)90710-4  0.36
1977 Grandke T, Ley L, Cardona M, Preier H. Spin-orbit splitting in the valence bands of PbSe from angle-resolved uv photoemission Solid State Communications. 24: 287-290. DOI: 10.1016/0038-1098(77)90208-3  0.333
1977 Azoulay J, Ley L. Electronic structure of PbI2 from photoelectron spectra and the exciton problem Solid State Communications. 22: 557-561. DOI: 10.1016/0038-1098(77)90135-1  0.383
1977 Kowalczyk SP, McFeely FR, Ley L, Gritsyna VT, Shirley DA. The electronic structure of SrTiO3 and some simple related oxides (MgO, Al2O3, SrO, TiO2) Solid State Communications. 23: 161-169. DOI: 10.1016/0038-1098(77)90101-6  0.347
1977 Ley L, Williams RH, Kemeny PC. Spatial symmetries of valence band structures by angularly resolved X-ray photoelectron spectroscopy Il Nuovo Cimento B. 39: 715-719. DOI: 10.1007/Bf02725815  0.362
1977 Kemeny PC, Azoulay J, Cardona M, Ley L. Photoelectron spectra of GeS, GeSe, SnS and SnSe and their relation to structural trends and phase transitions within the average-valence- compounds Il Nuovo Cimento B. 39: 709-714. DOI: 10.1007/Bf02725814  0.302
1976 Riley J, Azoulay J, Ley L. Photoelectron spectra of V3Si, a high Tc superconductor with a 15 structure Solid State Communications. 19: 993-995. DOI: 10.1016/0038-1098(76)90638-4  0.377
1976 Williams RH, Kemeny PC, Ley L. Spatial symmetries of valence band structures by angularly resolved X-ray photoelectron spectroscopy Solid State Communications. 19: 495-497. DOI: 10.1016/0038-1098(76)90050-8  0.375
1975 Ley L, McFeely FR, Kowalczyk SP, Jenkin JG, Shirley DA. Many-body effects in x-ray photoemission from magnesium Physical Review B. 11: 600-612. DOI: 10.1103/Physrevb.11.600  0.379
1975 Pardee WJ, Mahan GD, Eastman DE, Pollak RA, Ley L, McFeely FR, Kowalczyk SP, Shirley DA. Analysis of surface- and bulk-plasmon contributions to x-ray photoemission spectra Physical Review B. 11: 3614-3616. DOI: 10.1103/Physrevb.11.3614  0.307
1975 Shirley DA, Martin RL, McFeely FR, Kowalczyk SP, Ley L. Relaxation and final-state structure in XPS of atoms, molecules, and metals Faraday Discussions of the Chemical Society. 60: 7-17. DOI: 10.1039/Dc9756000007  0.319
1975 McFeely FR, Ley L, Kowalczyk SP, Shirley DA. The effect of spin-orbit splitting on the valence band density of states of lead Solid State Communications. 17: 1415-1420. DOI: 10.1016/0038-1098(75)90616-X  0.323
1975 Kowalczyk SP, Ley L, McFeely FR, Shirley DA. A high-resolution X-ray photoemission study of the total valence-band densities of states of GaSe and BiI3☆ Solid State Communications. 17: 463-467. DOI: 10.1016/0038-1098(75)90478-0  0.374
1974 Ley L, Pollak RA, McFeely FR, Kowalczyk SP, Shirley DA. Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy Physical Review B. 9: 600-621. DOI: 10.1103/Physrevb.9.600  0.313
1974 McFeely FR, Kowalczyk SP, Ley L, Cavell RG, Pollak RA, Shirley DA. X-ray photoemission studies of diamond, graphite, and glassy carbon valence bands Physical Review B. 9: 5268-5278. DOI: 10.1103/Physrevb.9.5268  0.349
1974 Kowalczyk SP, Ley L, McFeely FR, Pollak RA, Shirley DA. Relative effect of extra-atomic relaxation on Auger and binding-energy shifts in transition metals and salts Physical Review B. 9: 381-391. DOI: 10.1103/Physrevb.9.381  0.308
1974 Alvarez CVd, Cohen ML, Ley L, Kowalczyk SP, McFeely FR, Shirley DA, Grant RW. Electronic density of states and bonding in chalcopyrite-type semiconductors Physical Review B. 10: 596-598. DOI: 10.1103/Physrevb.10.596  0.337
1974 Pollak RA, Ley L, McFeely FR, Kowalczyk SP, Shirley DA. Characteristic energy loss structure of solids from x-ray photoemission spectra Journal of Electron Spectroscopy and Related Phenomena. 3: 381-398. DOI: 10.1016/0368-2048(74)80022-8  0.359
1974 Schlüter M, Joannopoulos JD, Cohen ML, Ley L, Kowalczyk SP, Pollak RA, Shirley DA. The structural nature of amorphous Se and Te Solid State Communications. 15: 1007-1010. DOI: 10.1016/0038-1098(74)90519-5  0.316
1973 Ley L, Pollak RA, Kowalczyk SP, McFeely R, Shirley DA. EVIDENCE FOR COVALENT BONDING IN CRYSTALLINE AND AMORPHOUS As, Sb, AND Bi FROM VALENCE BAND PHOTOELECTRON SPECTRA Physical Review B. 8: 641-646. DOI: 10.1103/Physrevb.8.641  0.387
1973 Cavell RG, Kowalczyk SP, Ley L, Pollak RA, Mills B, Shirley DA, Perry W. X-ray photoemission cross-section modulation in diamond, silicon, germanium, methane, silane, and germane Physical Review B. 7: 5313-5316. DOI: 10.1103/Physrevb.7.5313  0.396
1973 McFeely FR, Kowalczyk S, Ley L, Pollak RA, Shirley DA. High-Resolution X-Ray-Photoemission Spectra of PbS, PbSe, and PbTe Valence Bands Physical Review B. 7: 5228-5237. DOI: 10.1103/Physrevb.7.5228  0.369
1973 McFeely FR, Kowalczyk SP, Ley L, Shirley DA. X-ray photoemission study of Gd, Tb and Dy 4f and valence bands Physics Letters A. 45: 227-228. DOI: 10.1016/0375-9601(73)90178-3  0.332
1972 Pollak RA, Ley L, Kowalczyk S, Shirley DA, Joannopoulos JD, Chadi DJ, Cohen ML. X-Ray Photoemission Valence-Band Spectra and Theoretical Valence-Band Densities of States for Ge, GaAs, and ZnSe Physical Review Letters. 29: 1103-1105. DOI: 10.1103/Physrevlett.29.1103  0.311
1972 Ley L, Kowalczyk S, Pollak R, Shirley DA. X-ray photoemission spectra of crystalline and amorphous Si and Ge valence bands Physical Review Letters. 29: 1088-1092. DOI: 10.1103/Physrevlett.29.1088  0.416
1972 Kowalczyk S, Ley L, Pollak R, Shirley DA. High-resolution XPS spectra of Ir, Pt and Au valence bands Physics Letters A. 41: 455-456. DOI: 10.1016/0375-9601(72)90402-1  0.35
1972 Ley L, Pollak R, Kowalczyk S, Shirley DA. The onset of relativistic effects in the density of states of the 6s6p elements Tl, Pb, and Bi Physics Letters A. 41: 429-430. DOI: 10.1016/0375-9601(72)90390-8  0.324
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