Geoffrey Pourtois
Affiliations: | imec |
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| Galleni L, Meulemans A, Sajjadian FS, et al. (2024) Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: The Leading Role of the Electrostatic Landscape. The Journal of Physical Chemistry Letters. 15: 834-839 |
| Marques EA, De Gendt S, Pourtois G, et al. (2023) Benchmarking First-Principles Reaction Equilibrium Composition Prediction. Molecules (Basel, Switzerland). 28 |
| Marques E, de Gendt S, Pourtois G, et al. (2023) Improving Accuracy and Transferability of Machine Learning Chemical Activation Energies by Adding Electronic Structure Information. Journal of Chemical Information and Modeling. 63: 1454-1461 |
| Galleni L, Sajjadian FS, Conard T, et al. (2022) Modeling X-ray Photoelectron Spectroscopy of Macromolecules Using . The Journal of Physical Chemistry Letters. 13: 8666-8672 |
| Vohra A, Makkonen I, Pourtois G, et al. (2020) Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge 1-x Sn x and Si y Ge 1-x-y Sn x Ecs Journal of Solid State Science and Technology. 9: 44010 |
| Meng R, Houssa M, Iordanidou K, et al. (2020) Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping Journal of Applied Physics. 128: 34304 |
| Houssa M, Meng R, Iordanidou K, et al. (2020) Doping-induced ferromagnetism in InSe and SnO monolayers Journal of Computational Electronics. 1-7 |
| Vohra A, Khanam A, Slotte J, et al. (2019) Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation Journal of Applied Physics. 125: 225703 |
| Houssa M, Iordanidou K, Dabral A, et al. (2019) Contact resistance at graphene/MoS2 lateral heterostructures Applied Physics Letters. 114: 163101 |
| Vohra A, Khanam A, Slotte J, et al. (2019) Evolution of phosphorus-vacancy clusters in epitaxial germanium Journal of Applied Physics. 125: 25701 |