| Year |
Citation |
Score |
| 2024 |
Galleni L, Meulemans A, Sajjadian FS, Singh DP, Arvind S, Dorney KM, Conard T, D'Avino G, Pourtois G, Escudero D, van Setten MJ. Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: The Leading Role of the Electrostatic Landscape. The Journal of Physical Chemistry Letters. 15: 834-839. PMID 38235964 DOI: 10.1021/acs.jpclett.3c02640 |
0.697 |
|
| 2023 |
Marques EA, De Gendt S, Pourtois G, van Setten MJ. Benchmarking First-Principles Reaction Equilibrium Composition Prediction. Molecules (Basel, Switzerland). 28. PMID 37175062 DOI: 10.3390/molecules28093649 |
0.701 |
|
| 2023 |
Marques E, de Gendt S, Pourtois G, van Setten MJ. Improving Accuracy and Transferability of Machine Learning Chemical Activation Energies by Adding Electronic Structure Information. Journal of Chemical Information and Modeling. 63: 1454-1461. PMID 36864757 DOI: 10.1021/acs.jcim.2c01502 |
0.69 |
|
| 2022 |
Galleni L, Sajjadian FS, Conard T, Escudero D, Pourtois G, van Setten MJ. Modeling X-ray Photoelectron Spectroscopy of Macromolecules Using . The Journal of Physical Chemistry Letters. 13: 8666-8672. PMID 36084286 DOI: 10.1021/acs.jpclett.2c01935 |
0.701 |
|
| 2020 |
Vohra A, Makkonen I, Pourtois G, Slotte J, Porret C, Rosseel E, Khanam A, Tirrito M, Douhard B, Loo R, Vandervorst W. Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge 1-x Sn x and Si y Ge 1-x-y Sn x Ecs Journal of Solid State Science and Technology. 9: 44010. DOI: 10.1149/2162-8777/Ab8D91 |
0.343 |
|
| 2020 |
Meng R, Houssa M, Iordanidou K, Pourtois G, Afanasiev V, Stesmans A. Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping Journal of Applied Physics. 128: 34304. DOI: 10.1063/5.0012103 |
0.365 |
|
| 2020 |
Houssa M, Meng R, Iordanidou K, Pourtois G, Afanas’ev VV, Stesmans A. Doping-induced ferromagnetism in InSe and SnO monolayers Journal of Computational Electronics. 1-7. DOI: 10.1007/S10825-020-01535-0 |
0.356 |
|
| 2019 |
Vohra A, Khanam A, Slotte J, Makkonen I, Pourtois G, Porret C, Loo R, Vandervorst W. Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation Journal of Applied Physics. 125: 225703. DOI: 10.1063/1.5107503 |
0.334 |
|
| 2019 |
Houssa M, Iordanidou K, Dabral A, Lu A, Meng R, Pourtois G, Afanas'ev VV, Stesmans A. Contact resistance at graphene/MoS2 lateral heterostructures Applied Physics Letters. 114: 163101. DOI: 10.1063/1.5083133 |
0.312 |
|
| 2019 |
Vohra A, Khanam A, Slotte J, Makkonen I, Pourtois G, Loo R, Vandervorst W. Evolution of phosphorus-vacancy clusters in epitaxial germanium Journal of Applied Physics. 125: 25701. DOI: 10.1063/1.5054996 |
0.339 |
|
| 2019 |
Clima S, Garbin D, Devulder W, Keukelier J, Opsomer K, Goux L, Kar GS, Pourtois G. Material relaxation in chalcogenide OTS SELECTOR materials Microelectronic Engineering. 215: 110996. DOI: 10.1016/J.Mee.2019.110996 |
0.319 |
|
| 2018 |
Dabral A, Lu AKA, Chiappe D, Houssa M, Pourtois G. A systematic study of various 2D materials in the light of defect formation and oxidation. Physical Chemistry Chemical Physics : Pccp. PMID 30566131 DOI: 10.1039/C8Cp05665J |
0.369 |
|
| 2018 |
Andermatt S, Bani-Hashemian MH, Ducry F, Brück S, Clima S, Pourtois G, VandeVondele J, Luisier M. Microcanonical RT-TDDFT simulations of realistically extended devices. The Journal of Chemical Physics. 149: 124701. PMID 30278661 DOI: 10.1063/1.5040048 |
0.313 |
|
| 2018 |
Chiappe D, Ludwig J, Leonhardt A, El Kazzi S, Nalin Mehta A, Nuytten T, Celano U, Sutar S, Pourtois G, Caymax M, Paredis K, Vandervorst W, Lin D, Degendt S, Barla K, et al. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity. Nanotechnology. PMID 30070657 DOI: 10.1088/1361-6528/Aad798 |
0.34 |
|
| 2018 |
Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0191802Jss |
0.305 |
|
| 2018 |
Verreck D, Arutchelvan G, Rosa CJLDL, Leonhardt A, Chiappe D, Lu AKA, Pourtois G, Matagne P, Heyns MM, Gendt SD, Mocuta A, Radu IP. The Role of Nonidealities in the Scaling of MoS 2 FETs Ieee Transactions On Electron Devices. 65: 4635-4640. DOI: 10.1109/Ted.2018.2863750 |
0.333 |
|
| 2018 |
Houssa M, Iordanidou K, Pourtois G, Afanas’ev VV, Stesmans A. Ferromagnetism in two-dimensional hole-doped SnO Aip Advances. 8: 55010. DOI: 10.1063/1.5025272 |
0.349 |
|
| 2018 |
Meux AdJd, Pourtois G, Genoe J, Heremans P. Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO Journal of Applied Physics. 123: 161513. DOI: 10.1063/1.4986180 |
0.301 |
|
| 2017 |
Nalin Mehta A, Zhang H, Dabral A, Richard O, Favia P, Bender H, Delabie A, Caymax M, Houssa M, Pourtois G, Vandervorst W. Structural characterization of SnS crystals formed by chemical vapour deposition. Journal of Microscopy. PMID 28960352 DOI: 10.1111/Jmi.12652 |
0.306 |
|
| 2017 |
Meux AdJd, Pourtois G, Genoe J, Heremans P. Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor Journal of Physics: Condensed Matter. 29: 255702-255702. PMID 28198352 DOI: 10.1088/1361-648X/Aa608C |
0.31 |
|
| 2017 |
Lu AK, Houssa MJ, Radu IP, Pourtois G. Towards an understanding of the electric field-induced electrostatic doping in Van der Waals heterostructures: a first-principles study. Acs Applied Materials & Interfaces. PMID 28192656 DOI: 10.1021/Acsami.6B14722 |
0.346 |
|
| 2017 |
Colleoni D, Pourtois G, Pasquarello A. Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces Applied Physics Letters. 110: 111602. DOI: 10.1063/1.4977980 |
0.343 |
|
| 2017 |
Lu AKA, Pourtois G, Luisier M, Radu IP, Houssa M. On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study Journal of Applied Physics. 121: 44505. DOI: 10.1063/1.4974960 |
0.322 |
|
| 2017 |
Houssa M, Iordanidou K, Pourtois G, Afanas’ev VV, Stesmans A. Point defects in MoS 2 : Comparison between first-principles simulations and electron spin resonance experiments Applied Surface Science. 416: 853-857. DOI: 10.1016/J.Apsusc.2017.04.249 |
0.347 |
|
| 2017 |
Clima S, Belmonte A, Degraeve R, Fantini A, Goux L, Govoreanu B, Jurczak M, Ota K, Redolfi A, Kar GS, Pourtois G. Kinetic and thermodynamic heterogeneity: an intrinsic source of variability in Cu-based RRAM memories Journal of Computational Electronics. 16: 1011-1016. DOI: 10.1007/S10825-017-1042-3 |
0.332 |
|
| 2017 |
Meux AdJd, Bhoolokam A, Pourtois G, Genoe J, Heremans P. Oxygen vacancies effects in a‐IGZO: Formation mechanisms, hysteresis, and negative bias stress effects Physica Status Solidi (a). 214: 1600889. DOI: 10.1002/Pssa.201600889 |
0.334 |
|
| 2016 |
Iordanidou K, Houssa M, Pourtois G, Afanas'ev V, Stesmans A. Impact of Point Defects and Oxidation on the Electronic Properties of HfS2 Monolayers Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0101611Jss |
0.305 |
|
| 2016 |
Yu H, Schaekers M, Peter A, Pourtois G, Rosseel E, Lee J, Song W, Shin KM, Everaert J, Chew SA, Demuynck S, Kim D, Barla K, Mocuta A, Horiguchi N, et al. Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2 Ieee Transactions On Electron Devices. 63: 4632-4641. DOI: 10.1109/Ted.2016.2616587 |
0.323 |
|
| 2016 |
Iordanidou K, Houssa M, Van Den Broek B, Pourtois G, Afanas'Ev VV, Stesmans A. Impact of point defects on the electronic and transport properties of silicene nanoribbons Journal of Physics Condensed Matter. 28. DOI: 10.1088/0953-8984/28/3/035302 |
0.337 |
|
| 2016 |
Clima S, Chen YY, Chen CY, Goux L, Govoreanu B, Degraeve R, Fantini A, Jurczak M, Pourtois G. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device Journal of Applied Physics. 119. DOI: 10.1063/1.4953673 |
0.334 |
|
| 2016 |
Lu AKA, Pourtois G, Agarwal T, Afzalian A, Radu IP, Houssa M. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study Applied Physics Letters. 108. DOI: 10.1063/1.4940685 |
0.317 |
|
| 2016 |
van Den Broek B, Houssa M, Lu A, Pourtois G, Afanas’ev V, Stesmans A. Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport Nano Research. 1-13. DOI: 10.1007/S12274-016-1217-4 |
0.373 |
|
| 2016 |
Houssa M, van den Broek B, Iordanidou K, Lu AKA, Pourtois G, Locquet JP, Afanas’ev V, Stesmans A. Topological to trivial insulating phase transition in stanene Nano Research. 9: 774-778. DOI: 10.1007/S12274-015-0956-Y |
0.318 |
|
| 2015 |
Heremans P, Tripathi AK, de Jamblinne de Meux A, Smits EC, Hou B, Pourtois G, Gelinck GH. Mechanical and Electronic Properties of Thin-Film Transistors on Plastic, and Their Integration in Flexible Electronic Applications. Advanced Materials (Deerfield Beach, Fla.). PMID 26707947 DOI: 10.1002/Adma.201504360 |
0.366 |
|
| 2015 |
Nishio K, Lu AKA, Pourtois G. Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations Physical Review B. 91: 165303. DOI: 10.1103/Physrevb.91.165303 |
0.337 |
|
| 2015 |
Meux AdJd, Pourtois G, Genoe J, Heremans P. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects Journal of Physics D. 48: 435104. DOI: 10.1088/0022-3727/48/43/435104 |
0.367 |
|
| 2015 |
Schoeters B, Leenaerts O, Pourtois G, Partoens B. Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires Journal of Applied Physics. 118: 104306. DOI: 10.1063/1.4930048 |
0.383 |
|
| 2014 |
Mees MJ, Pourtois G, Rosciano F, Put B, Vereecken PM, Stesmans A. First-principles material modeling of solid-state electrolytes with the spinel structure. Physical Chemistry Chemical Physics : Pccp. 16: 5399-406. PMID 24503944 DOI: 10.1039/C3Cp54610A |
0.317 |
|
| 2014 |
Xu X, Vereecke G, Chen C, Pourtois G, Armini S, Verellen N, Tsai WK, Kim DW, Lee E, Lin CY, Van Dorpe P, Struyf H, Holsteyns F, Moshchalkov V, Indekeu J, et al. Capturing wetting states in nanopatterned silicon. Acs Nano. 8: 885-93. PMID 24380402 DOI: 10.1021/Nn405621W |
0.31 |
|
| 2014 |
Scalise E, Houssa M, Pourtois G, Afanasev VV, Stesmans A. First-principles study of strained 2D MoS2 Physica E: Low-Dimensional Systems and Nanostructures. 56: 416-421. DOI: 10.1016/J.Physe.2012.07.029 |
0.33 |
|
| 2014 |
Clima S, Govoreanu B, Jurczak M, Pourtois G. HfOx as RRAM material – First principles insights on the working principles Microelectronic Engineering. 120: 13-18. DOI: 10.1016/J.Mee.2013.08.002 |
0.357 |
|
| 2014 |
Houssa M, Van Den Broek B, Scalise E, Ealet B, Pourtois G, Chiappe D, Cinquanta E, Grazianetti C, Fanciulli M, Molle A, Afanas'Ev VV, Stesmans A. Theoretical aspects of graphene-like group IV semiconductors Applied Surface Science. 291: 98-103. DOI: 10.1016/J.Apsusc.2013.09.062 |
0.378 |
|
| 2014 |
Van Den Broek B, Houssa M, Scalise E, Pourtois G, Afanas'Ev VV, Stesmans A. First-principles electronic functionalization of silicene and germanene by adatom chemisorption Applied Surface Science. 291: 104-108. DOI: 10.1016/J.Apsusc.2013.09.032 |
0.355 |
|
| 2014 |
Scalise E, Cinquanta E, Houssa M, Van Den Broek B, Chiappe D, Grazianetti C, Pourtois G, Ealet B, Molle A, Fanciulli M, Afanas'Ev VV, Stesmans A. Vibrational properties of epitaxial silicene layers on (1 1 1) Ag Applied Surface Science. 291: 113-117. DOI: 10.1016/J.Apsusc.2013.08.113 |
0.323 |
|
| 2014 |
van den Broek B, Houssa M, Pourtois G, Afanas'ev VV, Stesmans A. Current-voltage characteristics of armchair Sn nanoribbons Physica Status Solidi - Rapid Research Letters. 8: 931-934. DOI: 10.1002/Pssr.201400073 |
0.328 |
|
| 2013 |
Schoeters B, Neyts EC, Khalilov U, Pourtois G, Partoens B. Stability of Si epoxide defects in Si nanowires: a mixed reactive force field/DFT study. Physical Chemistry Chemical Physics : Pccp. 15: 15091-7. PMID 23925698 DOI: 10.1039/C3Cp51621K |
0.378 |
|
| 2013 |
Houssa M, van den Broek B, Scalise E, Pourtois G, Afanas'ev VV, Stesmans A. An electric field tunable energy band gap at silicene/(0001) ZnS interfaces. Physical Chemistry Chemical Physics : Pccp. 15: 3702-5. PMID 23403806 DOI: 10.1039/C3Cp50391G |
0.319 |
|
| 2013 |
Khalilov U, Pourtois G, Bogaerts A, van Duin AC, Neyts EC. Reactive molecular dynamics simulations on SiO2-coated ultra-small Si-nanowires. Nanoscale. 5: 719-25. PMID 23223964 DOI: 10.1039/C2Nr32387G |
0.349 |
|
| 2013 |
Delabie A, Jayachandran S, Caymax M, Loo R, Maggen J, Pourtois G, Douhard B, Conard T, Meersschaut J, Lenka H, Vandervorst W, Heyns M. Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates Ecs Solid State Letters. 2. DOI: 10.1149/2.009311Ssl |
0.331 |
|
| 2013 |
Kaczer B, Clima S, Tomida K, Govoreanu B, Popovici M, Kim MS, Swerts J, Belmonte A, Wang WC, Afanas'Ev VV, Verhulst AS, Pourtois G, Groeseneken G, Jurczak M. Considerations for further scaling of metal-insulator-metal DRAM capacitors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4767125 |
0.311 |
|
| 2013 |
Clima S, Kaczer B, Govoreanu B, Popovici M, Swerts J, Verhulst AS, Jurczak M, De Gendt S, Pourtois G. Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from Ab initio complex band calculations Ieee Electron Device Letters. 34: 402-404. DOI: 10.1109/Led.2013.2238885 |
0.311 |
|
| 2013 |
Phung QM, Vancoillie S, Pourtois G, Swerts J, Pierloot K, Delabie A. Atomic Layer Deposition of Ruthenium on a Titanium Nitride Surface: A Density Functional Theory Study Journal of Physical Chemistry C. 117: 19442-19453. DOI: 10.1021/Jp405489W |
0.352 |
|
| 2013 |
Mann JK, Kurstjens R, Pourtois G, Gilbert M, Dross F, Poortmans J. Opportunities in nanometer sized Si wires for PV applications Progress in Materials Science. 58: 1361-1387. DOI: 10.1016/J.Pmatsci.2013.03.001 |
0.33 |
|
| 2013 |
Scalise E, Houssa M, Pourtois G, van den Broek B, Afanas'ev V, Stesmans A. Vibrational properties of silicene and germanene Nano Research. 6: 19-28. DOI: 10.1007/S12274-012-0277-3 |
0.304 |
|
| 2012 |
Delabie A, Sioncke S, Rip J, Elshocht SV, Pourtois G, Mueller M, Beckhoff B, Pierloot K. Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates Journal of Vacuum Science and Technology. 30. DOI: 10.1116/1.3664090 |
0.347 |
|
| 2012 |
Pham A, Sorée B, Magnus W, Jungemann C, Meinerzhagen B, Pourtois G. Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations Solid-State Electronics. 71: 30-36. DOI: 10.1016/J.Sse.2011.10.016 |
0.317 |
|
| 2012 |
Hardy A, Elshocht SV, Dobbelaere CD, Hadermann J, Pourtois G, Gendt SD, Afanas’ev VV, Bael MKV. Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films Materials Research Bulletin. 47: 511-517. DOI: 10.1016/J.Materresbull.2012.01.001 |
0.309 |
|
| 2012 |
Scalise E, Houssa M, Pourtois G, Afanas'ev V, Stesmans A. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 Nano Research. 5: 43-48. DOI: 10.1007/S12274-011-0183-0 |
0.34 |
|
| 2012 |
Phung QM, Vancoillie S, Delabie A, Pourtois G, Pierloot K. Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies Theoretical Chemistry Accounts. 131: 1238. DOI: 10.1007/S00214-012-1238-3 |
0.331 |
|
| 2012 |
Adelmann C, Delabie A, Schepers B, Rodriguez LNJ, Franquet A, Conard T, Opsomer K, Vaesen I, Moussa A, Pourtois G, Pierloot K, Caymax M, Elshocht SV. Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors Chemical Vapor Deposition. 18: 225-238. DOI: 10.1002/Cvde.201106967 |
0.336 |
|
| 2011 |
Lee JS, Kaufman-Osborn T, Melitz W, Lee S, Delabie A, Sioncke S, Caymax M, Pourtois G, Kummel AC. Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces. The Journal of Chemical Physics. 135: 054705. PMID 21823724 DOI: 10.1063/1.3621672 |
0.335 |
|
| 2011 |
Nourbakhsh A, Cantoro M, Vosch T, Pourtois G, Hofkens J, Heyns MM, Sels BF, De Gendt S. Transition from Metallic to Semiconducting Behavior in Oxygen Plasma-treated Single-layer Graphene Mrs Proceedings. 1336. DOI: 10.1557/Opl.2011.1046 |
0.306 |
|
| 2011 |
Houssa M, Pourtois G, Afanas'Ev VV, Stesmans A. First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces Applied Physics Letters. 99. DOI: 10.1063/1.3662860 |
0.35 |
|
| 2011 |
Houssa M, Scalise E, Sankaran K, Pourtois G, Afanas'Ev VV, Stesmans A. Electronic properties of hydrogenated silicene and germanene Applied Physics Letters. 98. DOI: 10.1063/1.3595682 |
0.364 |
|
| 2011 |
Scalise E, Houssa M, Pourtois G, Afanas'Ev VV, Stesmans A. Structural and vibrational properties of amorphous GeO2 from first-principles Applied Physics Letters. 98. DOI: 10.1063/1.3593036 |
0.336 |
|
| 2011 |
Houssa M, Scarrozza M, Pourtois G, Afanas'Ev VV, Stesmans A. Universal stress-defect correlation at (100)semiconductor/oxide interfaces Applied Physics Letters. 98. DOI: 10.1063/1.3575559 |
0.34 |
|
| 2011 |
Delabie A, Sioncke S, Rip J, Elshocht SV, Caymax M, Pourtois G, Pierloot K. Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium Journal of Physical Chemistry C. 115: 17523-17532. DOI: 10.1021/Jp206070Y |
0.354 |
|
| 2011 |
Nourbakhsh A, Cantoro M, Klekachev AV, Pourtois G, Vosch T, Hofkens J, van der Veen MH, Heyns MM, De Gendt S, Sels BF. Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties The Journal of Physical Chemistry C. 115: 16619-16624. DOI: 10.1021/Jp203010Z |
0.328 |
|
| 2011 |
Merckling C, Chang YC, Lu CY, Penaud J, Brammertz G, Scarrozza M, Pourtois G, Kwo J, Hong M, Dekoster J, Meuris M, Heyns M, Caymax M. Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation Surface Science. 605: 1778-1783. DOI: 10.1016/J.Susc.2011.06.008 |
0.36 |
|
| 2011 |
Houssa M, Pourtois G, Meuris M, Heyns MM, Afanas'Ev VV, Stesmans A. Experimental and theoretical investigation of defects at (1 0 0) Si 1-xGex/oxide interfaces Microelectronic Engineering. 88: 383-387. DOI: 10.1016/J.Mee.2010.09.001 |
0.39 |
|
| 2010 |
Nyns L, Delabie A, Pourtois G, Elshocht SV, Vinckier C, Gendt SD. Study of the Surface Reactions in ALD Hafnium Aluminates Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3246802 |
0.306 |
|
| 2010 |
Heyns M, Bellenger F, Brammertz G, Caymax M, Cantoro M, De Gendt S, De Jaeger B, Delabie A, Eneman G, Groeseneken G, Hellings G, Houssa M, Iacopi F, Leonelli D, Lin D, ... ... Pourtois G, et al. Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices Proceedings of Spie - the International Society For Optical Engineering. 7640. DOI: 10.1117/12.852587 |
0.314 |
|
| 2010 |
Eyben P, Clemente F, Vanstreels K, Pourtois G, Clarysse T, Duriau E, Hantschel T, Sankaran K, Mody J, Vandervorst W, Mylvaganam K, Zhang L. Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon Journal of Vacuum Science & Technology B. 28: 401-406. DOI: 10.1116/1.3273895 |
0.337 |
|
| 2010 |
Houssa M, Pourtois G, Afanas'Ev VV, Stesmans A. Can silicon behave like graphene? A first-principles study Applied Physics Letters. 97. DOI: 10.1063/1.3489937 |
0.367 |
|
| 2010 |
Houssa M, Pourtois G, Afanas'Ev VV, Stesmans A. Electronic properties of two-dimensional hexagonal germanium Applied Physics Letters. 96. DOI: 10.1063/1.3332588 |
0.342 |
|
| 2009 |
Caymax MR, Leys F, Mitard J, Martens K, Yang L, Pourtois G, Vandervorst W, Meuris M, Loo R. The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs Journal of the Electrochemical Society. 156: 183-194. DOI: 10.1149/1.3240880 |
0.374 |
|
| 2009 |
Popovici M, Delabie A, Elshocht SV, Clima S, Pourtois G, Nyns L, Tomida K, Menou N, Opsomer K, Swerts J, Detavernier C, Wouters D, Kittl JA. Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3186020 |
0.343 |
|
| 2009 |
Yang L, Pourtois G, Caymax M, Ceulemans A, Heyns M. Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4 Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.165312 |
0.358 |
|
| 2009 |
Scarrozza M, Pourtois G, Houssa M, Caymax M, Meuris M, Heyns MM, Stesmans A. Adsorption of molecular oxygen on the reconstructed β2(2 × 4)-GaAs(0 0 1) surface: A first-principles study Surface Science. 603: 203-208. DOI: 10.1016/J.Susc.2008.11.002 |
0.326 |
|
| 2009 |
Scarrozza M, Pourtois G, Houssa M, Caymax M, Stesmans A, Meuris M, Heyns MM. A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces Microelectronic Engineering. 86: 1747-1750. DOI: 10.1016/J.Mee.2009.03.110 |
0.337 |
|
| 2009 |
Caymax M, Brammertz G, Delabie A, Sioncke S, Lin D, Scarrozza M, Pourtois G, Wang W, Meuris M, Heyns M. Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) Microelectronic Engineering. 86: 1529-1535. DOI: 10.1016/J.Mee.2009.03.090 |
0.393 |
|
| 2009 |
Kittl JA, Opsomer K, Popovici M, Menou N, Kaczer B, Wang XP, Adelmann C, Pawlak MA, Tomida K, Rothschild A, Govoreanu B, Degraeve R, Schaekers M, Zahid M, Delabie A, ... ... Pourtois G, et al. High-k dielectrics for future generation memory devices (Invited Paper) Microelectronic Engineering. 86: 1789-1795. DOI: 10.1016/J.Mee.2009.03.045 |
0.344 |
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| 2009 |
Clima S, Pourtois G, Menou N, Popovici M, Rothschild A, Kaczer B, Elshocht SV, Wang XP, Swerts J, Pierreux D, Gendt SD, Wouters DJ, Kittl JA. Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response Microelectronic Engineering. 86: 1936-1938. DOI: 10.1016/J.Mee.2009.03.029 |
0.334 |
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| 2008 |
Brunco DP, De Jaeger B, Eneman G, Mitard J, Hellings G, Satta A, Terzieva V, Souriau L, Leys FE, Pourtois G, Houssa M, Winderickx G, Vrancken E, Sioncke S, Opsomer K, et al. Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance Journal of the Electrochemical Society. 155: H552-H561. DOI: 10.1149/1.2919115 |
0.351 |
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| 2008 |
Houssa M, Pourtois G, Caymax M, Meuris M, Heyns MM, Afanas'Ev VV, Stesmans A. Ge dangling bonds at the (100) Ge/ GeO2 interface and the viscoelastic properties of GeO2 Applied Physics Letters. 93. DOI: 10.1063/1.3006320 |
0.373 |
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| 2008 |
Houssa M, Pourtois G, Caymax M, Meuris M, Heyns M. First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf) Applied Physics Letters. 92: 242101. DOI: 10.1063/1.2944892 |
0.388 |
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| 2008 |
Xiong K, Delugas P, Hooker JC, Fiorentini V, Robertson J, Liu D, Pourtois G. Te-induced modulation of the Mo∕HfO2 interface effective work function Applied Physics Letters. 92: 113504. DOI: 10.1063/1.2870078 |
0.304 |
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| 2008 |
Pourtois G, Houssa M, Delabie A, Conard T, Caymax M, Meuris M, Heyns M. Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation Applied Physics Letters. 92: 32105. DOI: 10.1063/1.2833696 |
0.365 |
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| 2008 |
Houssa M, Pourtois G, Caymax M, Meuris M, Heyns M. Electronic properties of (100)Ge/Ge(Hf)O2 interfaces : A first-principles study Surface Science. 602. DOI: 10.1016/J.Susc.2007.12.040 |
0.325 |
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| 2008 |
Caymax M, Houssa M, Pourtois G, Bellenger F, Martens K, Delabie A, Elshocht SV. Interface control of high-k gate dielectrics on Ge Applied Surface Science. 254: 6094-6099. DOI: 10.1016/J.Apsusc.2008.02.134 |
0.354 |
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| 2007 |
Delabie A, Pourtois G, Caymax M, Gendt SD, Ragnarsson L, Heyns M, Fedorenko Y, Swerts J, Maes JW. Atomic layer deposition of hafnium silicate gate dielectric layers Journal of Vacuum Science and Technology. 25: 1302-1308. DOI: 10.1116/1.2713115 |
0.365 |
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| 2007 |
Delugas P, Fiorentini V, Filippetti A, Pourtois G. Cation charge anomalies and high-κdielectric behavior inDyScO3:Ab initiodensity-functional and self-interaction-corrected calculations Physical Review B. 75: 115126. DOI: 10.1103/Physrevb.75.115126 |
0.324 |
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| 2007 |
Houssa M, Pourtois G, Kaczer B, Jaeger BD, Leys FE, Nelis D, Paredis K, Vantomme A, Caymax M, Meuris M, Heyns MM. Experimental and theoretical study of Ge surface passivation Microelectronic Engineering. 84: 2267-2273. DOI: 10.1016/J.Mee.2007.04.114 |
0.358 |
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| 2007 |
Kaczer B, Jaeger BD, Nicholas G, Martens K, Degraeve R, Houssa M, Pourtois G, Leys F, Meuris M, Groeseneken G. Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation Microelectronic Engineering. 84: 2067-2070. DOI: 10.1016/J.Mee.2007.04.100 |
0.319 |
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| 2007 |
Kittl JA, Lauwers A, Pawlak MA, Veloso A, Yu HY, Chang SZ, Hoffmann T, Pourtois G, Brus S, Demeurisse C, Vrancken C, Absil PP, Biesemans S. Modulation of the effective work function of fully-silicided (FUSI) gate stacks Microelectronic Engineering. 84: 1857-1860. DOI: 10.1016/J.Mee.2007.04.002 |
0.341 |
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| 2006 |
Singanamalla R, Yu HY, Pourtois G, Ferain I, Anil KG, Kubicek S, Hoffmann TY, Jurczak M, Biesemans S, De Meyer K. On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and Poly-Si/TiN/HfSiON gate stacks Ieee Electron Device Letters. 27: 332-334. DOI: 10.1109/Led.2006.872916 |
0.339 |
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| 2006 |
Houssa M, Pantisano L, Ragnarsson LA, Degraeve R, Schram T, Pourtois G, De Gendt S, Groeseneken G, Heyns MM. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions Materials Science and Engineering R: Reports. 51: 37-85. DOI: 10.1016/J.Mser.2006.04.001 |
0.328 |
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| 2005 |
Hennebicq E, Pourtois G, Scholes GD, Herz LM, Russell DM, Silva C, Setayesh S, Grimsdale AC, Müllen K, Brédas JL, Beljonne D. Exciton migration in rigid-rod conjugated polymers: an improved Förster model. Journal of the American Chemical Society. 127: 4744-62. PMID 15796541 DOI: 10.1021/Ja0488784 |
0.336 |
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| 2005 |
Houssa M, Pourtois G, Heyns M, Stesmans A. Defect generation in high κ gate dielectric stacks under electrical stress: the impact of hydrogen Journal of Physics: Condensed Matter. 17. DOI: 10.1088/0953-8984/17/21/004 |
0.364 |
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| 2005 |
Pantisano L, Afanas’ev V, Pourtois G, Chen PJ. Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface Journal of Applied Physics. 98: 53712. DOI: 10.1063/1.2031947 |
0.375 |
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| 2005 |
Kittl JA, Lauwers A, Pawlak MA, van Dal MJ, Veloso A, Anil K, Pourtois G, Demeurisse C, Schram T, Brijs B, de Potter M, Vrancken C, Maex K. Ni fully silicided gates for 45nm CMOS applications Microelectronic Engineering. 82: 441-448. DOI: 10.1016/J.Mee.2005.07.084 |
0.309 |
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| 2005 |
Pourtois G, Lauwers A, Kittl J, Pantisano L, Sorée B, Gendt SD, Magnus W, Heyns M, Maex K. First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts Microelectronic Engineering. 80: 272-279. DOI: 10.1016/J.Mee.2005.04.080 |
0.332 |
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| 2004 |
Kittl JA, Lauwers A, Chamirian O, Pawlak MA, Van Dal M, Akheyar A, Potter MD, Kottantharayil A, Pourtois G, Lindsay R, Maex K. Applications of Ni-based silicides to 45 nm CMOS and Beyond Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C2.1 |
0.34 |
|
| 2002 |
Beljonne D, Pourtois G, Silva C, Hennebicq E, Herz LM, Friend RH, Scholes GD, Setayesh S, Mullen K, Bredas JL. Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers. Proceedings of the National Academy of Sciences of the United States of America. 99: 10982-7. PMID 12177444 DOI: 10.1073/Pnas.172390999 |
0.313 |
|
| 2002 |
Pourtois G, Beljonne D, Cornil J, Ratner MA, Brédas JL. Photoinduced electron-transfer processes along molecular wires based on phenylenevinylene oligomers: a quantum-chemical insight. Journal of the American Chemical Society. 124: 4436-47. PMID 11960473 DOI: 10.1021/Ja017150+ |
0.31 |
|
| 2001 |
Goldoni F, Antolini L, Pourtois G, Schenning A, Janssen R, Lazzaroni R, Brédas J, Meijer E. Effect of Ion Coordination on the Conformational and Electronic Structure of 3,4-Bis(alkylthio)thiophenes European Journal of Inorganic Chemistry. 2001: 821-828. DOI: 10.1002/1099-0682(200103)2001:3<821::Aid-Ejic821>3.0.Co;2-A |
0.319 |
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| 2000 |
Koch N, Rajagopal A, Zojer E, Ghijsen J, Crispin X, Pourtois G, Brédas JL, Johnson RL, Pireaux JJ, Leising G. Influence of the counterion on the electronic structure in doped phenylene-based materials Surface Science. 454: 1000-1004. DOI: 10.1016/S0039-6028(00)00102-3 |
0.348 |
|
| 1997 |
Parente V, Pourtois G, Lazzaroni R, Brédas JL. Theoretical investigation of the chemical structure and vibrational signature at the aluminum-polythiophene interface Synthetic Metals. 85: 1031-1034. DOI: 10.1016/S0379-6779(97)80141-5 |
0.334 |
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