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Gang Qiu - Publications

Affiliations: 
University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Semiconductor devices; Condensed matter physics
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Qiu G, Yang HY, Hu L, Zhang H, Chen CY, Lyu Y, Eckberg C, Deng P, Krylyuk S, Davydov AV, Zhang R, Wang KL. Emergent ferromagnetism with superconductivity in Fe(Te,Se) van der Waals Josephson junctions. Nature Communications. 14: 6691. PMID 37872165 DOI: 10.1038/s41467-023-42447-4  0.426
2023 Qiu G, Yang HY, Chong SK, Cheng Y, Tai L, Wang KL. Manipulating Topological Phases in Magnetic Topological Insulators. Nanomaterials (Basel, Switzerland). 13. PMID 37836296 DOI: 10.3390/nano13192655  0.381
2023 Niu C, Qiu G, Wang Y, Tan P, Wang M, Jian J, Wang H, Wu W, Ye PD. Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium. Nano Letters. PMID 37677143 DOI: 10.1021/acs.nanolett.3c01797  0.554
2023 Zhang P, Balakrishnan PP, Eckberg C, Deng P, Nozaki T, Chong SK, Quarterman P, Holtz ME, Maranville BB, Qiu G, Pan L, Emmanouilidou E, Ni N, Sahashi M, Grutter A, et al. Exchange-Biased Quantum Anomalous Hall Effect. Advanced Materials (Deerfield Beach, Fla.). e2300391. PMID 37207689 DOI: 10.1002/adma.202300391  0.391
2022 Tai L, Dai B, Li J, Huang H, Chong SK, Wong KL, Zhang H, Zhang P, Deng P, Eckberg C, Qiu G, He H, Wu D, Xu S, Davydov A, et al. Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect. Acs Nano. PMID 36126321 DOI: 10.1021/acsnano.2c08155  0.351
2022 Deng P, Eckberg C, Zhang P, Qiu G, Emmanouilidou E, Yin G, Chong SK, Tai L, Ni N, Wang KL. Probing the mesoscopic size limit of quantum anomalous Hall insulators. Nature Communications. 13: 4246. PMID 35869045 DOI: 10.1038/s41467-022-31105-w  0.34
2022 Qiu G, Zhang P, Deng P, Chong SK, Tai L, Eckberg C, Wang KL. Mesoscopic Transport of Quantum Anomalous Hall Effect in the Submicron Size Regime. Physical Review Letters. 128: 217704. PMID 35687463 DOI: 10.1103/PhysRevLett.128.217704  0.448
2021 Niu C, Qiu G, Wang Y, Si M, Wu W, Ye PD. Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well. Nano Letters. PMID 34514803 DOI: 10.1021/acs.nanolett.1c01705  0.59
2020 Jnawali G, Xiang Y, Linser SM, Shojaei IA, Wang R, Qiu G, Lian C, Wong BM, Wu W, Ye PD, Leng Y, Jackson HE, Smith LM. Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets. Nature Communications. 11: 3991. PMID 32778660 DOI: 10.1038/S41467-020-17766-5  0.513
2020 Qiu G, Niu C, Wang Y, Si M, Zhang Z, Wu W, Ye PD. Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene. Nature Nanotechnology. PMID 32601448 DOI: 10.1038/S41565-020-0715-4  0.559
2019 Bae H, Charnas A, Sun X, Noh J, Si M, Chung W, Qiu G, Lyu X, Alghamdi S, Wang H, Zemlyanov D, Ye PD. Solar-Blind UV Photodetector Based on Atomic Layer-Deposited CuO and Nanomembrane β-GaO pn Oxide Heterojunction. Acs Omega. 4: 20756-20761. PMID 31858062 DOI: 10.1021/acsomega.9b03149  0.472
2019 Qiu G, Huang S, Segovia M, Venuthurumilli PK, Wang YX, Wu WZ, Xu X, Ye PD. Thermoelectric Performance of 2D Tellurium with Accumulation Contacts. Nano Letters. PMID 30753783 DOI: 10.1021/Acs.Nanolett.8B05144  0.584
2019 Berweger S, Qiu G, Wang YX, Pollard B, Genter KL, Tyrrell-Ead R, Wallis TM, Wu WZ, Ye PD, Kabos P. Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors. Nano Letters. PMID 30673247 DOI: 10.1021/Acs.Nanolett.8B04865  0.561
2018 Qiu G, Wang YX, Nie Y, Zheng Y, Cho K, Wu W, Ye PD. Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene. Nano Letters. PMID 30126280 DOI: 10.1021/Acs.Nanolett.8B02368  0.595
2018 Wu W, Qiu G, Wang Y, Wang R, Ye P. Tellurene: its physical properties, scalable nanomanufacturing, and device applications. Chemical Society Reviews. PMID 30118130 DOI: 10.1039/C8Cs00598B  0.577
2018 Si M, Liao PY, Qiu G, Duan Y, Ye PD. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional Van der Waals Heterostructure. Acs Nano. PMID 29944829 DOI: 10.1021/acsnano.8b01810  0.57
2018 Qiu G, Nian Q, Motlag M, Jin S, Deng B, Deng Y, Charnas AR, Ye PD, Cheng GJ. Ultrafast Laser-Shock-Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films. Advanced Materials (Deerfield Beach, Fla.). PMID 29337377 DOI: 10.1002/adma.201704405  0.508
2017 Yang L, Charnas A, Qiu G, Lin YM, Lu CC, Tsai W, Paduano Q, Snure M, Ye PD. How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus? Acs Omega. 2: 4173-4179. PMID 31457714 DOI: 10.1021/acsomega.7b00634  0.555
2017 Si M, Su CJ, Jiang C, Conrad NJ, Zhou H, Maize KD, Qiu G, Wu CT, Shakouri A, Alam MA, Ye PD. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nature Nanotechnology. PMID 29255287 DOI: 10.1038/S41565-017-0010-1  0.55
2017 Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Controlled Growth of Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications. Acs Nano. PMID 28949510 DOI: 10.1021/Acsnano.7B04786  0.586
2017 Du Y, Qiu G, Wang Y, Si M, Xu X, Wu W, Ye PD. 1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport. Nano Letters. PMID 28562056 DOI: 10.1021/Acs.Nanolett.7B01717  0.552
2016 Qiu G, Du Y, Charnas A, Zhou H, Jin S, Luo Z, Zemlyanov DY, Xu X, Cheng GJ, Ye PD. Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5. Nano Letters. 16: 7364-7369. PMID 27960486 DOI: 10.1021/Acs.Nanolett.6B02629  0.593
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