R. Stanley Williams
Affiliations: | 1980 | Bell Laboratories, Murray Hill, NJ, United States | |
| 1980-1995 | Chemistry | University of California, Los Angeles, Los Angeles, CA | |
| 1995-2018 | Hewlett-Packard | ||
| 2018- | Electrical and Computer Engineering | Texas A & M University, College Station, TX, United States |
Area:
nanotechnology, computing, cognitionWebsite:
https://cesg.tamu.edu/people-2/faculty/r-stanley-williams/Google:
"Richard Stanley Williams" OR "R. Stanley Williams"Bio:
https://engineering.tamu.edu/electrical/profiles/r-stanely-williams.html
https://orcid.org/0000-0003-0213-4259
https://www.researchgate.net/profile/Stan-Williams
https://scholar.google.com/citations?user=dAFE2L8AAAAJ&hl=en
https://books.google.com/books?id=xV9RAQAAMAAJ
Mean distance: 9.68
Parents
Sign in to add mentor| David A. Shirley | grad student | 1978 | UC Berkeley | |
| (Angle-resolved photoelectron spectroscopy applied to the determination of the surface electronic structure of crystalline metals) | ||||
Children
Sign in to add trainee| Masato M Maitnai | research assistant | 2007-2009 | |
| Sehun Kim | grad student | 1981-1986 | UCLA |
| Laurence P. Sadwick | grad student | 1989 | UCLA (E-Tree) |
| David K. Shuh | grad student | 1990 | UCLA |
| Chun Ning (Jeanie) Lau | post-doc | (Physics Tree) |
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Publications
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| Goswami S, Deb D, Tempez A, et al. (2020) Nanometer-Scale Uniform Conductance Switching in Molecular Memristors. Advanced Materials (Deerfield Beach, Fla.). e2004370 |
| Goswami S, Rath SP, Thompson D, et al. (2020) Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. Nature Nanotechnology |
| Goswami S, Thompson D, Williams RS, et al. (2020) Colossal current and voltage tunability in an organic memristor via electrode engineering Applied Materials Today. 19: 100626 |
| Bohaichuk SM, Kumar S, Pitner G, et al. (2019) Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device. Nano Letters |
| Medeiros-Ribeiro G, Bratkovski AM, Kamins TI, et al. (2019) Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes Science (New York, N.Y.). 279: 353-5 |
| Kumar S, Williams RS. (2018) Separation of current density and electric field domains caused by nonlinear electronic instabilities. Nature Communications. 9: 2030 |
| La Torre C, Kindsmüller A, Wouters DJ, et al. (2017) Volatile HRS asymmetry and subloops in resistive switching oxides. Nanoscale |
| Graves CE, Dávila N, Merced-Grafals EJ, et al. (2017) Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable Applied Physics Letters. 110: 123501 |
| Kumar S, Wang Z, Huang X, et al. (2016) Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors. Acs Nano |
| Zhang J, Norris KJ, Gibson G, et al. (2016) Thermally induced crystallization in NbO2 thin films. Scientific Reports. 6: 34294 |