Year |
Citation |
Score |
2016 |
Simone DD, Mao M, Kocsis M, Schepper PD, Lazzarino F, Vandenberghe G, Stowers J, Meyers S, Clark BL, Grenville A, Luong V, Yamashita F, Parnell D. Demonstration of an N7 integrated fab process for metal oxide EUV photoresist Proceedings of Spie. 9776. DOI: 10.1117/12.2220051 |
0.773 |
|
2016 |
Stowers J, Anderson J, Cardineau B, Clark B, De Schepper P, Edson J, Greer M, Jiang K, Kocsis M, Meyers S, Telecky A, Grenville A, De Simone D, Gillijns W, Vandenberghe G. Metal oxide EUV photoresist performance for N7 relevant patterns and processes Proceedings of Spie - the International Society For Optical Engineering. 9779. DOI: 10.1117/12.2219527 |
0.639 |
|
2015 |
Grenville A, Anderson JT, Clark BL, De Schepper P, Edson J, Greer M, Jiang K, Kocsis M, Meyers ST, Stowers JK, Telecky AJ, De Simone D, Vandenberghe G. Integrated fab process for metal oxide EUV photoresist Proceedings of Spie - the International Society For Optical Engineering. 9425. DOI: 10.1117/12.2086006 |
0.649 |
|
2013 |
Jiang K, Meyers ST, Anderson MD, Johnson DC, Keszler DA. Functional ultrathin films and nanolaminates from aqueous solutions Chemistry of Materials. 25: 210-214. DOI: 10.1021/Cm303268P |
0.658 |
|
2012 |
Teki R, John Kadaksham A, House M, Harris-Jones J, Ma A, Babu SV, Hariprasad A, Dumas P, Jenkins R, Provine J, Richmann A, Stowers J, Meyers S, Dietze U, Kusumoto T, et al. Alternative smoothing techniques to mitigate EUV substrate defectivity Proceedings of Spie - the International Society For Optical Engineering. 8322. DOI: 10.1117/12.916497 |
0.638 |
|
2011 |
Kim KM, Kim CW, Heo JS, Na H, Lee JE, Park CB, Bae JU, Kim CD, Jun M, Hwang YK, Meyers ST, Grenville A, Keszler DA. Competitive device performance of low-temperature and all-solution- processed metal-oxide thin-film transistors Applied Physics Letters. 99. DOI: 10.1063/1.3665912 |
0.646 |
|
2010 |
Weiss DN, Yuan HC, Lee BG, Branz HM, Meyers ST, Grenville A, Keszler DA. Nanoimprinting for diffractive light trapping in solar cells Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6M98-C6M103. DOI: 10.1116/1.3498754 |
0.538 |
|
2010 |
Weiss DN, Meyers ST, Keszler DA. All-inorganic thermal nanoimprint process Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 823-828. DOI: 10.1116/1.3463454 |
0.62 |
|
2010 |
Heo JS, Kim J, Choi S, Park KS, Kim CD, Hwang YK, Chung IJ, Meyers ST, Anderson JT, Clark BC, Greer M, Jiang K, Grenville A, Keszler DA. 17.4L: Late-news paper: Contact resistance and process integration effects on high-performance oxide TFTs with solution-deposited semiconductor and gate dielectric layers 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1: 241-244. |
0.61 |
|
2010 |
Heo JS, Kim J, Choi S, Park KS, Kim CD, Hwang YK, Chung IJ, Meyers ST, Anderson JT, Clark BC, Greer M, Jiang K, Grenville A, Keszler DA. 17.4L: Late-news paper: Contact resistance and process integration effects on high-performance oxide TFTs with solution-deposited semiconductor and gate dielectric layers 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1: 241-244. |
0.61 |
|
2009 |
Lai YC, Yu CC, Chang FW, Lin LY, Wang MC, Gu HH, Huang CY, Hsu CC, Liu SC, Lai YH, Lai SH, Chiang SC, Meyers ST, Anderson JT, Grenville A, et al. Solution processed IGZO-TFTs with various gate insulator layer applied to active matrix LCD Idw '09 - Proceedings of the 16th International Display Workshops. 3: 1697-1700. |
0.485 |
|
2008 |
Meyers ST, Anderson JT, Hung CM, Thompson J, Wager JF, Keszler DA. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs. Journal of the American Chemical Society. 130: 17603-9. PMID 19053193 DOI: 10.1021/Ja808243K |
0.62 |
|
2008 |
Mensinger ZL, Gatlin JT, Meyers ST, Zakharov LN, Keszler DA, Johnson DW. Synthesis of heterometallic group 13 nanoclusters and inks for oxide thin-film transistors. Angewandte Chemie (International Ed. in English). 47: 9484-6. PMID 18973216 DOI: 10.1002/Anie.200803514 |
0.608 |
|
2008 |
Keszler DA, Anderson JT, Meyers ST. Oxide Dielectric Films for Active Electronics Solution Processing of Inorganic Materials. 109-129. DOI: 10.1002/9780470407790.ch4 |
0.559 |
|
2007 |
Meyers ST, Anderson JT, Hong D, Hung CM, Wager JF, Keszler DA. Solution-processed aluminum oxide phosphate thin-film dielectrics Chemistry of Materials. 19: 4023-4029. DOI: 10.1021/Cm0702619 |
0.627 |
|
2006 |
Anderson JT, Meyers ST, Chiang HQ, Hong D, Presley RE, Wager JF, Keszler DA. Solution-processed oxide films, devices, and integrated circuits Materials Research Society Symposium Proceedings. 988: 218-225. |
0.573 |
|
2005 |
Anderson J, Meyers S, Keszler DA, Munsee C, Olson J, Wager JF, Phung T, Johnson DC, Herman GS. Solution-based, low-temperature deposition of oxide thin films for electronics Digital Fabrication 2005 - Final Program and Proceedings. 179. |
0.568 |
|
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