| Year |
Citation |
Score |
| 2020 |
Ebrish MA, Anderson TJ, Koehler AD, Foster GM, Gallagher JC, Kaplar RJ, Gunning BP, Hobart KD. A study on the impact of mid-gap defects on vertical GaN diodes Ieee Transactions On Semiconductor Manufacturing. 1-1. DOI: 10.1109/Tsm.2020.3019212 |
0.335 |
|
| 2020 |
Foster GM, Koehler A, Ebrish M, Gallagher J, Anderson T, Noesges B, Brillson L, Gunning B, Hobart KD, Kub F. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments Applied Physics Letters. 117: 82103. DOI: 10.1063/5.0021153 |
0.369 |
|
| 2020 |
Specht P, Kirste R, Sitar Z, Anderson T, Koehler A, Kisielowski C. Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy Microscopy and Microanalysis. 1-3. DOI: 10.1017/S1431927620023703 |
0.327 |
|
| 2019 |
Gallagher JC, Koehler AD, Tadjer MJ, Mahadik NA, Anderson TJ, Budhathoki S, Law K, Hauser AJ, Hobart KD, Kub FJ. Demonstration of CuI as a P–N heterojunction to β-Ga2O3 Applied Physics Express. 12: 104005. DOI: 10.7567/1882-0786/Ab420E |
0.333 |
|
| 2019 |
Anderson TJ, Luna LE, Aktas O, Foster GM, Koehler AD, Tadjer MJ, Mastro MA, Hobart KD, Odnoblyudov V, Basceri C, Kub FJ. Lateral GaN JFET Devices on Large Area Engineered Substrates Ecs Journal of Solid State Science and Technology. 8: Q226-Q229. DOI: 10.1149/2.0091912Jss |
0.35 |
|
| 2019 |
Gallagher JC, Kub FJ, Anderson TJ, Koehler AD, Foster GM, Jacobs AG, Feigelson BN, Mastro MA, Hite JK, Hobart KD. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation Ieee Transactions On Semiconductor Manufacturing. 32: 478-482. DOI: 10.1109/Tsm.2019.2932272 |
0.33 |
|
| 2019 |
Khachatrian A, Buchner S, Koehler A, Affouda C, McMorrow D, LaLumondiere SD, Dillingham EC, Bonsall JP, Scofield AC, Brewe DL. The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs Ieee Transactions On Nuclear Science. 66: 1682-1687. DOI: 10.1109/Tns.2019.2910493 |
0.32 |
|
| 2019 |
Khachatrian A, Roche NJ-, Buchner SP, Koehler AD, Anderson TJ, McMorrow D, Lalumondiere SD, Bonsall JP, Dillingham EC, Brewe DL. Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam Ieee Transactions On Nuclear Science. 66: 368-375. DOI: 10.1109/Tns.2018.2885824 |
0.409 |
|
| 2019 |
Tadjer MJ, Anderson TJ, Ancona MG, Raad PE, Komarov P, Bai T, Gallagher JC, Koehler AD, Goorsky MS, Francis DA, Hobart KD, Kub FJ. GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging Ieee Electron Device Letters. 40: 881-884. DOI: 10.1109/Led.2019.2909289 |
0.387 |
|
| 2019 |
Gallagher J, Anderson T, Luna L, Koehler A, Hite J, Mahadik N, Hobart K, Kub F. Long range, non-destructive characterization of GaN substrates for power devices Journal of Crystal Growth. 506: 178-184. DOI: 10.1016/J.Jcrysgro.2018.10.032 |
0.418 |
|
| 2018 |
Khachatrian A, Roche NJ, Ruppalt LB, Champlain JG, Buchner S, Koehler AD, Anderson TJ, Hobart KD, Warner JH, Mcmorrow D. Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs Ieee Transactions On Nuclear Science. 65: 369-375. DOI: 10.1109/Tns.2017.2777007 |
0.319 |
|
| 2018 |
Tadjer MJ, Raad PE, Komarov PL, Hobart KD, Feygelson TI, Koehler AD, Anderson TJ, Nath A, Pate B, Kub FJ. Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance Ieee Journal of the Electron Devices Society. 6: 922-930. DOI: 10.1109/Jeds.2018.2860792 |
0.399 |
|
| 2018 |
Tadjer MJ, Koehler AD, JAF, Gallagher JC, Specht MC, Glaser ER, Hobart KD, Anderson TJ, Kub FJ, Thieu QT, Sasaki K, Wakimoto D, Goto K, Watanabe S, Kuramata A. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen Applied Physics Letters. 113: 192102. DOI: 10.1063/1.5045601 |
0.372 |
|
| 2018 |
Shahin DI, Tadjer MJ, Wheeler VD, Koehler AD, Anderson TJ, CRE, Christou A. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3 Applied Physics Letters. 112: 42107. DOI: 10.1063/1.5006276 |
0.401 |
|
| 2018 |
Anderson TJ, Gallagher JC, Luna LE, Koehler AD, Jacobs AG, Xie J, Hobart KD, Feigelson BN. Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices Journal of Crystal Growth. 499: 35-39. DOI: 10.1016/J.Jcrysgro.2018.07.027 |
0.366 |
|
| 2017 |
Anderson TJ, Koehler AD, Tadjer MJ, Hite JK, Nath A, Mahadik NA, Aktas O, Odnoblyudov V, Basceri C, Hobart KD, Kub FJ. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates Applied Physics Express. 10: 126501. DOI: 10.7567/Apex.10.126501 |
0.441 |
|
| 2017 |
Koehler AD, Anderson TJ, Khachatrian A, Nath A, Tadjer MJ, Buchner SP, Hobart KD, Kub FJ. High Voltage GaN Lateral Photoconductive Semiconductor Switches Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0231711Jss |
0.426 |
|
| 2017 |
Tadjer MJ, Anderson TJ, Koehler AD, Eddy CR, Shahin DI, Hobart KD, Kub FJ. A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0231701Jss |
0.32 |
|
| 2017 |
Gallagher JC, Anderson TJ, Koehler AD, Mahadik NA, Nath A, Weaver BD, Hobart KD, Kub FJ. Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0151711Jss |
0.461 |
|
| 2017 |
Greenlee JD, Nath A, Anderson TJ, Feigelson BN, Koehler AD, Hobart KD, Dupuis RD, Detchprohm T, Shen SC, Kub FJ. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0141702Jss |
0.37 |
|
| 2017 |
Koehler AD, Anderson TJ, Tadjer MJ, Nath A, Feigelson BN, Shahin DI, Hobart KD, Kub FJ. Vertical GaN Junction Barrier Schottky Diodes Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0041701Jss |
0.371 |
|
| 2017 |
Khachatrian A, Roche NJ-, Buchner SP, Koehler AD, Anderson TJ, Hobart KD, McMorrow D, LaLumondiere SD, Wells NP, Bonsall J, Dillingham EC, Karuza P, Brewe DL, Lotshaw WT, Moss SC, et al. Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al 0.3 Ga 0.7 N/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 97-105. DOI: 10.1109/Tns.2016.2641678 |
0.323 |
|
| 2017 |
Zhang Y, Liu Z, Tadjer MJ, Sun M, Piedra D, Hatem C, Anderson TJ, Luna LE, Nath A, Koehler AD, Okumura H, Hu J, Zhang X, Gao X, Feigelson BN, et al. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Ieee Electron Device Letters. 38: 1097-1100. DOI: 10.1109/Led.2017.2720689 |
0.341 |
|
| 2017 |
Nath A, Kong BD, Koehler AD, Anderson VR, Wheeler VD, Daniels KM, Boyd AK, Cleveland ER, Myers-Ward RL, Gaskill DK, Hobart KD, Kub FJ, Jernigan GG. Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer Applied Physics Letters. 110: 013106. DOI: 10.1063/1.4973200 |
0.393 |
|
| 2016 |
Anderson TJ, Wheeler VD, Shahin DI, Tadjer MJ, Koehler AD, Hobart KD, Christou A, Kub FJ, Eddy CR. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition Applied Physics Express. 9: 71003. DOI: 10.7567/Apex.9.071003 |
0.439 |
|
| 2016 |
Anderson TJ, Koehler AD, Freitas JA, Weaver BD, Greenlee JD, Tadjer MJ, Imhoff EA, Hobart KD, Kub FJ. Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0281612Jss |
0.47 |
|
| 2016 |
Weaver BD, Anderson TJ, Koehler AD, Greenlee JD, Hite JK, Shahin DI, Kub FJ, Hobart KD. Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0281607Jss |
0.411 |
|
| 2016 |
Shahin DI, Anderson TJ, Wheeler VD, Tadjer MJ, Koehler AD, Hobart KD, Eddy CR, Kub FJ, Christou A. Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0211607Jss |
0.439 |
|
| 2016 |
Tadjer MJ, Mahadik NA, Wheeler VD, Glaser ER, Ruppalt L, Koehler AD, Hobart KD, Eddy CR, Kub FJ. Communication-A (001) β-Ga2O3 MOSFET with +2.9 v threshold voltage and HfO2 gate dielectric Ecs Journal of Solid State Science and Technology. 5: P468-P470. DOI: 10.1149/2.0061609Jss |
0.369 |
|
| 2016 |
Khachatrian A, Roche NJ, Buchner SP, Koehler AD, Greenlee JD, Anderson TJ, Warner JH, McMorrow D. Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique Ieee Transactions On Nuclear Science. 63: 1995-2001. DOI: 10.1109/Tns.2016.2588886 |
0.39 |
|
| 2016 |
Koehler AD, Anderson TJ, Tadjer MJ, Weaver BD, Greenlee JD, Shahin DI, Hobart KD, Kub FJ. Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs Ieee Electron Device Letters. 37: 545-548. DOI: 10.1109/Led.2016.2537050 |
0.414 |
|
| 2016 |
Anderson TJ, Tadjer MJ, Hite JK, Greenlee JD, Koehler AD, Hobart KD, Kub FJ. Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates Ieee Electron Device Letters. 37: 28-30. DOI: 10.1109/Led.2015.2502221 |
0.487 |
|
| 2016 |
Greenlee JD, Gunning B, Feigelson BN, Anderson TJ, Koehler AD, Hobart KD, Kub FJ, Doolittle WA. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing Electronic Materials Letters. 12: 133-138. DOI: 10.1007/S13391-015-5270-Z |
0.382 |
|
| 2016 |
Tadjer MJ, Anderson TJ, Feygelson TI, Hobart KD, Hite JK, Koehler AD, Wheeler VD, Pate BB, Eddy CR, Kub FJ. Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process Physica Status Solidi (a) Applications and Materials Science. 213: 893-897. DOI: 10.1002/Pssa.201532570 |
0.448 |
|
| 2015 |
Anderson TJ, Hobart KD, Greenlee JD, Shahin DI, Koehler AD, Tadjer MJ, Imhoff EA, Myers-Ward RL, Christou A, Kub FJ. Ultraviolet detector based on graphene/SiC heterojunction Applied Physics Express. 8. DOI: 10.7567/Apex.8.041301 |
0.317 |
|
| 2015 |
Greenlee JD, Anderson TJ, Feigelson BN, Koehler AD, Hobart KD, Kub FJ. Characterization of a selective AlN wet etchant Applied Physics Express. 8. DOI: 10.7567/Apex.8.036501 |
0.354 |
|
| 2015 |
Khachatrian A, Roche NJH, Buchner S, Koehler AD, Anderson TJ, Ferlet-Cavrois V, Muschitiello M, McMorrow D, Weaver B, Hobart KD. A Comparison of Single-Event Transients in Pristine and Irradiated Al0.3Ga0.7/GaN HEMTs using Two-Photon Absorption and Heavy Ions Ieee Transactions On Nuclear Science. 62: 2743-2751. DOI: 10.1109/Tns.2015.2498286 |
0.331 |
|
| 2015 |
Martin-Horcajo S, Wang A, Bosca A, Romero MF, Tadjer MJ, Koehler AD, Anderson TJ, Calle F. Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/3/035015 |
0.446 |
|
| 2015 |
Greenlee JD, Specht P, Anderson TJ, Koehler AD, Weaver BD, Luysberg M, Dubon OD, Kub FJ, Weatherford TR, Hobart KD. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs Applied Physics Letters. 107. DOI: 10.1063/1.4929583 |
0.398 |
|
| 2014 |
Anderson T, Koehler A, Hwang YH, Hsieh YL, Li S, Ren F, Johnson JW, Pearton SJ. Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891629 |
0.456 |
|
| 2014 |
Tadjer MJ, Hobart KD, Anderson TJ, Feygelson TI, Myers-Ward RL, Koehler AD, Calle F, Eddy CR, Gaskill DK, Pate BB, Kub FJ. Thermionic-field emission barrier between nanocrystalline diamond and epitaxial 4H-SiC Ieee Electron Device Letters. 35: 1173-1175. DOI: 10.1109/Led.2014.2364596 |
0.397 |
|
| 2014 |
Koehler AD, Specht P, Anderson TJ, Weaver BD, Greenlee JD, Tadjer MJ, Porter M, Wade M, Dubon OC, Hobart KD, Weatherford TR, Kub FJ. Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs Ieee Electron Device Letters. 35: 1194-1196. DOI: 10.1109/Led.2014.2363433 |
0.41 |
|
| 2014 |
Meyer DJ, Feygelson TI, Anderson TJ, Roussos JA, Tadjer MJ, Downey BP, Katzer DS, Pate BB, Ancona MG, Koehler AD, Hobart KD, Eddy CR. Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors Ieee Electron Device Letters. 35: 1013-1015. DOI: 10.1109/Led.2014.2345631 |
0.41 |
|
| 2014 |
Anderson TJ, Koehler AD, Greenlee JD, Weaver BD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Hobart KD. Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation Ieee Electron Device Letters. 35: 826-828. DOI: 10.1109/Led.2014.2331001 |
0.468 |
|
| 2014 |
Martin-Horcajo S, Wang A, Romero MF, Tadjer MJ, Koehler AD, Anderson TJ, Calle F. Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/115013 |
0.349 |
|
| 2014 |
Nath A, Koehler AD, Jernigan GG, Wheeler VD, Hite JK, Hernández SC, Robinson ZR, Garces NY, Myers-Ward RL, Eddy CR, Gaskill DK, Rao MV. Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process Applied Physics Letters. 104. DOI: 10.1063/1.4880937 |
0.394 |
|
| 2014 |
Tadjer MJ, Anderson TJ, Myers-Ward RL, Wheeler VD, Nyakiti LO, Robinson Z, Eddy CR, Gaskill DK, Koehler AD, Hobart KD, Kub FJ. Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC Applied Physics Letters. 104. DOI: 10.1063/1.4866024 |
0.379 |
|
| 2013 |
Anderson TJ, Koehler AD, Hobart KD, Tadjer MJ, Feygelson TI, Hite JK, Pate BB, Kub FJ, Eddy CR. Nanocrystalline diamond-gated AlGaN/GaN HEMT Ieee Electron Device Letters. 34: 1382-1384. DOI: 10.1109/Led.2013.2282968 |
0.441 |
|
| 2013 |
Koehler AD, Nepal N, Anderson TJ, Tadjer MJ, Hobart KD, Eddy CR, Kub FJ. Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation Ieee Electron Device Letters. 34: 1115-1117. DOI: 10.1109/Led.2013.2274429 |
0.446 |
|
| 2012 |
Anderson TJ, Hobart KD, Nyakiti LO, Wheeler VD, Myers-Ward RL, Caldwell JD, Bezares FJ, Jernigan GG, Tadjer MJ, Imhoff EA, Koehler AD, Gaskill DK, Eddy CR, Kub FJ. Investigation of the epitaxial graphene/p-SiC heterojunction Ieee Electron Device Letters. 33: 1610-1612. DOI: 10.1109/Led.2012.2211562 |
0.378 |
|
| 2010 |
Koehler AD, Gupta A, Chu M, Parthasarathy S, Linthicum KJ, Johnson JW, Nishida T, Thompson SE. Extraction of AlGaN/GaN HEMT gauge factor in the presence of traps Ieee Electron Device Letters. 31: 665-667. DOI: 10.1109/Led.2010.2048195 |
0.561 |
|
| 2010 |
Chu M, Koehler AD, Gupta A, Nishida T, Thompson SE. Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility Journal of Applied Physics. 108: 104502. DOI: 10.1063/1.3500465 |
0.547 |
|
| 2008 |
Yang X, Parthasarathy S, Sun Y, Koehler A, Nishida T, Thompson SE. Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms Applied Physics Letters. 93: 243503. DOI: 10.1063/1.3046725 |
0.529 |
|
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