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Timothy James Anderson - Publications

Affiliations: 
Chemical Engineering University of Florida, Gainesville, Gainesville, FL, United States 
Area:
advanced electronic materials
Website:
http://www.che.ufl.edu/faculty/anderson/

180 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Meyer LC, Lee JW, Johnson D, Huang M, Ren F, Anderson TJ, LaRoche JR, Lothian JR, Abernathy CR, Pearton SJ. Study of  NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System Journal of the Electrochemical Society. 146: 2717-2719. DOI: 10.1149/1.1391998  0.431
2019 Soltanmohammad S, Tong HM, Anderson TJ, Shafarman WN. Reaction Rate Enhancement for Cu(In,Ga)Se2 Absorber Materials Using Ag-Alloying Ieee Journal of Photovoltaics. 9: 898-905. DOI: 10.1109/Jphotov.2019.2897582  0.394
2019 Nolan MM, Kim SY, Koley A, Anderson T, McElwee-White L. In Situ Investigation of the Thermal Decomposition of Cl4 (CH3 CN)W(N i Pr) During Simulated Chemical Vapor Deposition European Journal of Inorganic Chemistry. 2019: 3646-3646. DOI: 10.1002/Ejic.201900863  0.345
2019 Nolan MM, Kim SY, Koley A, Anderson T, McElwee-White L. Front Cover: In Situ Investigation of the Thermal Decomposition of Cl4 (CH3 CN)W(N i Pr) During Simulated Chemical Vapor Deposition (Eur. J. Inorg. Chem. 32/2019) European Journal of Inorganic Chemistry. 2019: 3645-3645. DOI: 10.1002/Ejic.201900862  0.343
2019 Nolan MM, Kim SY, Koley A, Anderson T, McElwee-White L. In Situ Investigation of the Thermal Decomposition of Cl4 (CH3 CN)W(N i Pr) During Simulated Chemical Vapor Deposition European Journal of Inorganic Chemistry. 2019: 3661-3666. DOI: 10.1002/Ejic.201900627  0.345
2018 Muzzillo CP, Li JV, Mansfield LM, Ramanathan K, Anderson TJ. Surface and bulk effects of K in highly efficient Cu1-xKxInSe2 solar cells Solar Energy Materials and Solar Cells. 185: 45-53. DOI: 10.1016/J.Solmat.2018.05.013  0.309
2018 Muzzillo CP, Tong HM, Anderson TJ. The effect of Na on Cu-K-In-Se thin film growth Journal of Crystal Growth. 488: 36-42. DOI: 10.1016/J.Jcrysgro.2018.02.035  0.433
2017 Muzzillo CP, Anderson TJ. Surface and bulk effects of K in Cu1−xKxIn1−yGaySe2 solar cells Solar Energy Materials and Solar Cells. 179: 362-371. DOI: 10.1016/J.Solmat.2017.12.038  0.343
2017 Guan P, Shang S, Lindwall G, Anderson T, Liu Z. Phase stability of the Cu-Sn-S system and optimal growth conditions for earth-abundant Cu2SnS3 solar materials Solar Energy. 155: 745-757. DOI: 10.1016/J.Solener.2017.07.017  0.307
2017 Muzzillo CP, Tong HM, Anderson T. Chemistry of K in Cu(In,Ga)Se2 photovoltaic absorbers: Effects of temperature on Cu-K-In-Se films Journal of Alloys and Compounds. 726: 538-546. DOI: 10.1016/J.Jallcom.2017.08.019  0.36
2016 Shang SL, Lindwall G, Wang Y, Redwing JM, Anderson T, Liu ZK. Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS2. Nano Letters. PMID 27540753 DOI: 10.1021/Acs.Nanolett.6B02443  0.34
2016 Bonsu RO, Bock DC, Kim H, Korotkov RY, Abboud KA, Anderson TJ, McElwee-White L. Synthesis and evaluation of κ(2)-β-diketonate and β-ketoesterate tungsten(vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WOx thin films. Dalton Transactions (Cambridge, England : 2003). PMID 27160734 DOI: 10.1039/C6Dt01078D  0.368
2016 Kim H, Bonsu RO, Bock DC, Ou NC, Korotkov RY, McElwee-White L, Anderson T. Tungsten Oxide Film and Nanorods Grown by Aerosol-Assisted Chemical Vapor Deposition Using κ2-β-Diketonate and β-Ketoesterate Tungsten (VI) Oxo-Alkoxide Precursors Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0171611Jss  0.379
2016 Lindwall G, Shang S, Kelly NR, Anderson T, Liu ZK. Thermodynamics of the S-Sn system: Implication for synthesis of earth abundant photovoltaic absorber materials Solar Energy. 125: 314-323. DOI: 10.1016/J.Solener.2015.12.013  0.377
2016 Lee H, Jeong D, Mun T, Pejjai B, Reddy VRM, Anderson TJ, Park C. Formation and characterization of CuInSe2 thin films from binary CuSe and In2Se3 nanocrystal-ink spray Korean Journal of Chemical Engineering. 33: 2486-2491. DOI: 10.1007/S11814-016-0097-3  0.45
2016 Muzzillo CP, Mansfield LM, Ramanathan K, Anderson TJ. Properties of Cu1−xKxInSe2 alloys Journal of Materials Science. 51: 6812-6823. DOI: 10.1007/S10853-016-9969-5  0.407
2016 Muzzillo CP, Campbell CE, Anderson TJ. Cu–Ga–In thermodynamics: experimental study, modeling, and implications for photovoltaics Journal of Materials Science. 51: 3362-3379. DOI: 10.1007/S10853-015-9651-3  0.451
2015 Bonsu RO, Kim H, O'Donohue C, Korotkov RY, Abboud KA, Anderson TJ, McElwee-White L. Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition. Inorganic Chemistry. 54: 7536-47. PMID 26172992 DOI: 10.1021/Acs.Inorgchem.5B01124  0.406
2015 Kim H, Bonsu RO, O'Donohue C, Korotkov RY, McElwee-White L, Anderson TJ. Aerosol-assisted chemical vapor deposition of tungsten oxide films and nanorods from oxo tungsten(VI) fluoroalkoxide precursors. Acs Applied Materials & Interfaces. 7: 2660-7. PMID 25569472 DOI: 10.1021/Am507706E  0.463
2015 Ider M, Pankajavalli R, Zhuang W, Shen JY, Anderson TJ. Thermochemistry of the Ga-Se system Ecs Journal of Solid State Science and Technology. 4: Q51-Q60. DOI: 10.1149/2.0011507Jss  0.76
2015 Anderson TJ, Koehler AD, Specht P, Weaver BD, Greenlee JD, Tadjer MJ, Hite JK, Mastro MA, Porter M, Wade M, Dubon OD, Luysberg M, Hobart KD, Weatherford TR, Kub FJ. Failure mechanisms in AlGaN/GaN HEMTs irradiated with 2MeV protons Ecs Transactions. 66: 15-20. DOI: 10.1149/06601.0015ecst  0.452
2015 Bonsu RO, Kim H, O'Donohue C, Korotkov RY, Abboud KA, Anderson TJ, McElwee-White L. Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition Inorganic Chemistry. 54: 7536-7547. DOI: 10.1021/acs.inorgchem.5b01124  0.359
2015 Koley A, O'Donohue CT, Nolan MM, McClain KR, Bonsu RO, Korotkov RY, Anderson T, McElwee-White L. Effect of the Ligand Structure on Chemical Vapor Deposition of WNxCy Thin Films from Tungsten Nitrido Complexes of the Type WN(NR2)3 Chemistry of Materials. 27: 8326-8336. DOI: 10.1021/Acs.Chemmater.5B03691  0.477
2015 Shahin DI, Anderson TJ, Feygelson TI, Pate BB, Wheeler VD, Greenlee JD, Hite JK, Tadjer MJ, Christou A, Hobart KD. Thermal etching of nanocrystalline diamond films Diamond and Related Materials. 59: 116-121. DOI: 10.1016/J.Diamond.2015.09.017  0.367
2014 Bonsu RO, Kim H, O'Donohue C, Korotkov RY, McClain KR, Abboud KA, Ellsworth AA, Walker AV, Anderson TJ, McElwee-White L. Partially fluorinated oxo-alkoxide tungsten(VI) complexes as precursors for deposition of WOx nanomaterials. Dalton Transactions (Cambridge, England : 2003). 43: 9226-33. PMID 24821611 DOI: 10.1039/C4Dt00407H  0.346
2014 McClain KR, O'Donohue C, Koley A, Bonsu RO, Abboud KA, Revelli JC, Anderson TJ, McElwee-White L. Tungsten nitrido complexes as precursors for low temperature chemical vapor deposition of WN(x)C(y) films as diffusion barriers for Cu metallization. Journal of the American Chemical Society. 136: 1650-62. PMID 24383494 DOI: 10.1021/Ja4117582  0.515
2014 O’Donohue CT, McClain KR, Koley A, Revelli JC, McElwee-White L, Anderson TJ. Low Temperature Deposition of WNxCyDiffusion Barriers Using WN(NEt2)3as a Single-Source Precursor Ecs Journal of Solid State Science and Technology. 4: N3180-N3187. DOI: 10.1149/2.0251501Jss  0.505
2014 Koehler AD, Anderson TJ, Hite JK, Weaver BD, Tadjer MJ, Mastro MA, Greenlee JD, Specht P, Porter M, Weatherford TR, Hobart KD, Kub FJ. Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation 2nd Ieee Workshop On Wide Bandgap Power Devices and Applications, Wipda 2014. 33-35. DOI: 10.1109/WiPDA.2014.6964619  0.512
2014 Anderson TJ, Koehler AD, Greenlee JD, Weaver BD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Hobart KD. Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation Ieee Electron Device Letters. 35: 826-828. DOI: 10.1109/Led.2014.2331001  0.505
2014 Greenlee JD, Feigelson BN, Anderson TJ, Tadjer MJ, Hite JK, Mastro MA, Eddy CR, Hobart KD, Kub FJ. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties Journal of Applied Physics. 116. DOI: 10.1063/1.4892618  0.61
2014 Anderson TJ, Feigelson BN, Kub FJ, Tadjer MJ, Hobart KD, Mastro MA, Hite JK, Eddy CR. Activation of Mg implanted in GaN by multicycle rapid thermal annealing Electronics Letters. 50: 197-198. DOI: 10.1049/El.2013.3214  0.482
2014 Ider M, Pankajavalli R, Zhuang W, Shen JY, Anderson TJ. Thermochemistry of the Cu2Se-In2Se3 system Journal of Alloys and Compounds. 604: 363-372. DOI: 10.1016/J.Jallcom.2014.03.129  0.77
2014 Mastro MA, Anderson TJ, Tadjer MJ, Kub FJ, Hite JK, Kim J, Eddy CR. III-nitride nanowire based light emitting diodes on carbon paper Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 442-445. DOI: 10.1002/Pssc.201300537  0.482
2013 Park YJ, Na KJ, Park GC, Kim RS, Anderson TJ. Thermal evolution characterizatics of atomic layer deposition prepared TiO2 interfacial layer by synchrotron radiation X-ray scattering. Journal of Nanoscience and Nanotechnology. 13: 4207-10. PMID 23862474 DOI: 10.1166/Jnn.2013.7013  0.438
2013 Nepal N, Wheeler VD, Anderson TJ, Kub FJ, Mastro MA, Myers-Ward RL, Qadri SB, Freitas JA, Hernandez SC, Nyakiti LO, Walton SG, Gaskill K, Eddy CR. Epitaxial growth of III-nitride/graphene heterostructures for electronic devices Applied Physics Express. 6. DOI: 10.7567/Apex.6.061003  0.557
2013 Park YJ, Na KJ, Park GC, Kim RS, Anderson TJ. Thermal evolution characterizatics of atomic layer deposition prepared TiO2 interfacial layer by synchrotron radiation X-ray scattering Journal of Nanoscience and Nanotechnology. 13: 4207-4210. DOI: 10.1166/jnn.2013.7013  0.328
2013 Eddy CR, Anderson TJ, Koehler AD, Nepal N, Meyer DJ, Tadjer MJ, Baranyai R, Pomeroy JW, Kuball M, Feygelson TI, Pate BB, Mastro MA, Hite JK, Ancona MG, Kub FJ, et al. GaN power transistors with integrated thermal management Ecs Transactions. 58: 279-286. DOI: 10.1149/05804.0279ecst  0.452
2012 Lee J, Kim D, Kim OH, Anderson T, Koller J, Denomme DR, Habibi SZ, Ehsan M, Eyler JR, McElwee-White L. Experimental and computational studies of the homogeneous thermal decomposition of the tungsten dimethylhydrazido complexes Cl 4(RCN) W(NNMe 2) Journal of the Electrochemical Society. 159: H545-H553. DOI: 10.1149/2.002206Jes  0.773
2012 Krishnan R, Wood D, Chaudhari VU, Payzant EA, Noufi R, Rozeveld S, Kim WK, Anderson TJ. Reaction routes for the synthesis of CuInSe2 using bilayer compound precursors Progress in Photovoltaics. 20: 543-556. DOI: 10.1002/Pip.2262  0.503
2012 McClain KR, O'Donohue C, Shi Z, Walker AV, Abboud KA, Anderson T, McElwee-White L. Synthesis of WN(NMe 2) 3 as a precursor for the deposition of WN x nanospheres European Journal of Inorganic Chemistry. 4579-4584. DOI: 10.1002/Ejic.201200254  0.414
2012 Anderson TJ, Tadjer MJ, Hobart KD, Feygelson TI, Caldwell JD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Pate BB. Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers 2012 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2012 0.489
2011 Kim D, Hyun Kim O, Ajmera HM, Anderson T, Koller J, Abboud KA, McElwee-White L. Deposition of WNxCy from the tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip) as a single-source precursor Journal of the Electrochemical Society. 158: H618-H625. DOI: 10.1149/1.3561669  0.811
2011 Anderson TJ, Tadjer MJ, Hobart KD, Feygelson TI, Caldwell JD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Butler JE, Pate BB. Temperature profiling in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers by Raman spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135264  0.509
2011 Kim HY, Anderson T, Mastro MA, Freitas JA, Jang S, Hite J, Eddy CR, Kim J. Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons Journal of Crystal Growth. 326: 62-64. DOI: 10.1016/J.Jcrysgro.2011.01.052  0.495
2011 Truong NTN, Monroe ML, Farva U, Anderson TJ, Park C. Controlling the morphology of trioctyl phosphine oxide-coated cadmium selenide/poly 3-hexyl thiophene composite active layer for bulk hetero-junction solar cells Korean Journal of Chemical Engineering. 28: 1625-1631. DOI: 10.1007/S11814-011-0015-7  0.312
2010 Caldwell JD, Anderson TJ, Culbertson JC, Jernigan GG, Hobart KD, Kub FJ, Tadjer MJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Technique for the dry transfer of epitaxial graphene onto arbitrary substrates. Acs Nano. 4: 1108-14. PMID 20099904 DOI: 10.1021/Nn901585P  0.566
2010 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Butler JE, Kub FJ. Comparative study of ohmic contact metallizations to nanocrystalline diamond films Materials Science Forum. 645: 733-735. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.733  0.349
2010 Tadjer MJ, Hobart KD, Mastro MA, Anderson TJ, Imhoff EA, Kub FJ, Hite JK, Eddy CR. Effect of temperature and Al concentration on the electrical performance of GaN and Al0.2Ga0.8N accumulation-mode FET devices Materials Science Forum. 645: 1215-1218. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.1215  0.537
2010 Caldwell JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Dry techniques for epitaxial graphene transfer Materials Research Society Symposium Proceedings. 1259: 17-22. DOI: 10.1557/Proc-1259-S18-05  0.446
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Development of enhancement mode AIN/ultrathin AlGaN/GaN HEMTs by selective wet etching Ecs Transactions. 28: 65-70. DOI: 10.1149/13377101  0.464
2010 Caldwell JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Tadjer MJ, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Techniques for the dry transfer of epitaxial graphene onto arbitrary substrates Ecs Transactions. 33: 177-186. DOI: 10.1149/1.3483506  0.467
2010 Caldwel JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Tadjer MJ, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Epitaxial graphene: Dry transfer and materials characterization Proceedings of Spie - the International Society For Optical Engineering. 7761. DOI: 10.1117/12.860676  0.559
2010 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Mastro MA, Caldwell JD, Hite JK, Eddy CR, Kub FJ, Butler JE, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat spreading films Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2010.5551873  0.525
2010 Tadjer MJ, Anderson TJ, Hobart KD, Mastro MA, Hite JK, Caldwell JD, Picard YN, Kub FJ, Eddy CR. Electrical and optical characterization of AlGaN/GaN HEMTs with in situ and Ex situ deposited SiN x layers Journal of Electronic Materials. 39: 2452-2458. DOI: 10.1007/S11664-010-1343-9  0.529
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Characterization of recessed-gate algan/GaN HEMTs as a function of etch depth Journal of Electronic Materials. 39: 478-481. DOI: 10.1007/S11664-010-1111-X  0.489
2010 Kim YS, Won YS, Omenetto N, Anderson TJ. Cadmium-carbon wavenumber analysis using B3LYP level theory calculations in investigations of dimethylcadmium decomposition Journal of Raman Spectroscopy. 41: 106-112. DOI: 10.1002/Jrs.2402  0.575
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Demonstration of enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using a selective wet etch approach 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010 0.47
2009 Kim D, Kim OH, Anderson T, Koller J, McElwee-White L, Leu L, Tsai JM, Norton DP. Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip): Deposition, characterization, and diffusion barrier evaluation Journal of Vacuum Science and Technology. 27: 943-950. DOI: 10.1116/1.3106625  0.832
2009 Kim OH, Kim D, Anderson T. Atomic layer deposition of GaN using GaCl3 and NH3 Journal of Vacuum Science and Technology. 27: 923-928. DOI: 10.1116/1.3106619  0.811
2009 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching Ieee Electron Device Letters. 30: 1251-1253. DOI: 10.1109/Led.2009.2033083  0.517
2009 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378212  0.471
2009 Ajmera HM, Anderson TJ, Koller J, McElwee-White L, Norton DP. Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2-) tungsten complex (CH3CN)Cl4W(NNMe2) Thin Solid Films. 517: 6038-6045. DOI: 10.1016/J.Tsf.2009.04.036  0.836
2009 Leu LC, Norton DP, Anderson TJ, McElwee-White L. Stability of Cu/Ir/Si trilayer structure to moderate annealing Materials Science in Semiconductor Processing. 12: 151-155. DOI: 10.1016/J.Mssp.2009.09.008  0.46
2009 Won YS, Park SS, Kim YS, Anderson TJ, McElwee-White L. Computational study on transamination of alkylamides with NH3 during metalorganic chemical vapor deposition of tantalum nitride Journal of Crystal Growth. 311: 3587-3591. DOI: 10.1016/J.Jcrysgro.2009.05.003  0.677
2009 Varanasi VG, Besmann TM, Hyde RL, Payzant EA, Anderson TJ. MOCVD of YSZ coatings using β-diketonate precursors Journal of Alloys and Compounds. 470: 354-359. DOI: 10.1016/J.Jallcom.2008.02.103  0.34
2009 Leu LC, Norton DP, McElwee-White L, Anderson TJ. Properties of reactively sputtered W-B-N thin film as a diffusion barrier for Cu metallization on Si Applied Physics A. 94: 691-695. DOI: 10.1007/S00339-008-4961-9  0.425
2008 Kim YS, Won YS, Hagelin-Weaver H, Omenetto N, Anderson T. Homogeneous decomposition mechanisms of diethylzinc by Raman spectroscopy and quantum chemical calculations. The Journal of Physical Chemistry. A. 112: 4246-53. PMID 18407707 DOI: 10.1021/Jp7103787  0.603
2008 Koller J, Ajmera HM, Abboud KA, Anderson TJ, McElwee-White L. Synthesis and characterization of diorganohydrazido(2-) tungsten complexes. Inorganic Chemistry. 47: 4457-62. PMID 17867680 DOI: 10.1021/Ic701151M  0.798
2008 Ajmera HM, Heitsch AT, Bchir OJ, Norton DP, Reitfort LL, McElwee-White L, Anderson TJ. Deposition of WNxCy using the allylimido complexes Cl4(RCN)W(NC3H5): Effect of NH3 on film properties Journal of the Electrochemical Society. 155: H829-H835. DOI: 10.1149/1.2961053  0.814
2008 Wang Y, Covert LN, Anderson TJ, Lim W, Lin J, Pearton SJ, Norton DP, Zavada JM, Ren F. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Electrochemical and Solid-State Letters. 11: H60. DOI: 10.1149/1.2825474  0.352
2008 Hwang JY, Park C, Jung JH, Anderson TJ. Homogeneous Decomposition of Trimethylindium in an Inverted, Stagnation-Point Flow Reactor by In Situ Raman Spectroscopy Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2816206  0.572
2008 Ajmera HM, Heitsch AT, Anderson TJ, Wilder CB, Reitfort LL, McElwee-White L, Norton DP. Deposition of W Nx Cy for diffusion barrier application using the imido guanidinato complex W (Ni Pr) Cl3 [Pri NC (N Me2) Ni Pr] Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1800-1807. DOI: 10.1116/1.2981082  0.838
2008 Leu LC, Sadik P, Norton DP, McElwee-White L, Anderson TJ. Comparative study of ZrN and Zr–Ge–N thin films as diffusion barriers for Cu metallization on Si Journal of Vacuum Science & Technology B. 26: 1723-1727. DOI: 10.1116/1.2976571  0.427
2008 Leu LC, Norton DP, McElwee-White L, Anderson TJ. Ir/TaN as a bilayer diffusion barrier for advanced Cu interconnects Applied Physics Letters. 92: 111917. DOI: 10.1063/1.2901035  0.358
2008 Won YS, Kim YS, Anderson TJ, McElwee-White L. Computational Study of the Gas Phase Reactions of Isopropylimido and Allylimido Tungsten Precursors for Chemical Vapor Deposition of Tungsten Carbonitride Films: Implications for the Choice of Carrier Gas Chemistry of Materials. 20: 7246-7251. DOI: 10.1021/Cm802173E  0.662
2008 Varanasi VG, Besmann TM, Payzant EA, Starr TL, Anderson TJ. Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition Thin Solid Films. 516: 6133-6139. DOI: 10.1016/J.Tsf.2007.11.020  0.399
2008 Won YS, Kim YS, Kryliouk O, Anderson TJ. Growth mechanism of catalyst- and template-free group III-nitride nanorods Journal of Crystal Growth. 310: 3735-3740. DOI: 10.1016/J.Jcrysgro.2008.05.045  0.636
2008 Kim WK, Payzant EA, Kim S, Speakman SA, Crisalle OD, Anderson TJ. Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film Journal of Crystal Growth. 310: 2987-2994. DOI: 10.1016/J.Jcrysgro.2008.01.034  0.6
2008 Zheng F, Shen JY, Liu YQ, Kim WK, Chu MY, Ider M, Bao XH, Anderson TJ. Thermodynamic optimization of the Ga-Se system Calphad: Computer Coupling of Phase Diagrams and Thermochemistry. 32: 432-438. DOI: 10.1016/J.Calphad.2008.03.004  0.786
2008 Won YS, Kim YS, Kryliouk O, Anderson T. Growth mechanism of catalyst- and template-free InN nanorods Physica Status Solidi (C). 5: 1633-1638. DOI: 10.1002/Pssc.200778558  0.601
2007 Kryliouk O, Park HJ, Won YS, Anderson T, Davydov A, Levin I, Kim JH, Freitas JA. Controlled synthesis of single-crystalline InN nanorods Nanotechnology. 18: 135606. DOI: 10.1088/0957-4484/18/13/135606  0.641
2007 Kang SW, Park HJ, Won YS, Kryliouk O, Anderson T, Khokhlov D, Burbaev T. Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InN Applied Physics Letters. 90: 161126. DOI: 10.1063/1.2730582  0.706
2007 Rawal S, Norton DP, Ajmera H, Anderson TJ, McElwee-White L. Properties of Ta-Ge-(O)N as a diffusion barrier for Cu on Si Applied Physics Letters. 90. DOI: 10.1063/1.2435979  0.798
2007 Liliental-Weber Z, Park HJ, Mangum J, Anderson T, Kryliouk O. InN Nanorods Grown on Different Planes of Al2O3 Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607073771  0.473
2007 Kim WK, Payzant EA, Anderson TJ, Crisalle OD. In situ investigation of the selenization kinetics of Cu-Ga precursors using time-resolved high-temperature X-ray diffraction Thin Solid Films. 515: 5837-5842. DOI: 10.1016/J.Tsf.2006.12.173  0.583
2007 Park HJ, Kryliouk O, Anderson T, Khokhlov D, Burbaev T. Growth of InN films and nanorods by H-MOVPE Physica E-Low-Dimensional Systems & Nanostructures. 37: 142-147. DOI: 10.1016/J.Physe.2006.06.022  0.559
2007 Won YS, Varanasi VG, Kryliouk O, Anderson TJ, McElwee-White L, Perez RJ. Equilibrium analysis of zirconium carbide CVD growth Journal of Crystal Growth. 307: 302-308. DOI: 10.1016/J.Jcrysgro.2007.05.039  0.659
2007 Won YS, Kim YS, Varanasi VG, Kryliouk O, Anderson TJ, Sirimanne CT, McElwee-White L. Growth of ZrC thin films by aerosol-assisted MOCVD Journal of Crystal Growth. 304: 324-332. DOI: 10.1016/J.Jcrysgro.2006.12.071  0.711
2007 Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090  0.393
2007 Herrero AM, Gerger A, Gila B, Pearton S, Wang H, Jang S, Anderson T, Chen J, Kang B, Ren F, Shen H, LaRoche JR, Smith KV. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K Applied Surface Science. 253: 3298-3302. DOI: 10.1016/J.Apsusc.2006.07.032  0.362
2007 Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y  0.323
2007 Liliental-Weber Z, Lu H, Schaff WJ, Kryliouk O, Park HJ, Mangum J, Anderson T. Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3 Physica Status Solidi (C). 4: 2469-2473. DOI: 10.1002/Pssc.200674907  0.458
2006 Won YS, Kim YS, Anderson TJ, Reitfort LL, Ghiviriga I, McElwee-White L. Homogeneous decomposition of aryl- and alkylimido precursors for the chemical vapor deposition of tungsten nitride: a combined density functional theory and experimental study. Journal of the American Chemical Society. 128: 13781-8. PMID 17044706 DOI: 10.1021/Ja0621804  0.681
2006 Chen JJ, Anderson TJ, Jang S, Ren F, Li YJ, Kim H, Gila BP, Norton DP, Pearton SJ. Ti∕Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 153: G462. DOI: 10.1149/1.2184047  0.351
2006 Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730  0.301
2006 Wang H, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Improved Au Schottky contacts on GaAs using cryogenic metal deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1799. DOI: 10.1116/1.2213270  0.388
2006 Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 284. DOI: 10.1116/1.2163888  0.304
2006 Rawal S, Norton DP, Kim K, Anderson TJ, McElwee-White L. Ge∕HfNx diffusion barrier for Cu metallization on Si Applied Physics Letters. 89: 231914. DOI: 10.1063/1.2400071  0.473
2006 Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698  0.38
2006 Rawal S, Lambers E, Norton DP, Anderson TJ, McElwee-White L. Comparative study of HfNx and Hf–Ge–N copper diffusion barriers on Ge Journal of Applied Physics. 100: 63532. DOI: 10.1063/1.2349470  0.472
2006 Chen J, Jang S, Anderson TJ, Ren F, Li Y, Kim H, Gila BP, Norton DP, Pearton SJ. Low specific contact resistance Ti∕Au contacts on ZnO Applied Physics Letters. 88: 122107. DOI: 10.1063/1.2187576  0.348
2006 Shen J, Kim WK, Shang S, Chu M, Cao S, Anderson TJ. Thermodynamic description of the ternary compounds in the Cu-In-Se system Rare Metals. 25: 481-487. DOI: 10.1016/S1001-0521(06)60088-0  0.455
2006 Park C, Yeo S, Kim J, Yoon D, Anderson TJ. Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy Thin Solid Films. 498: 94-99. DOI: 10.1016/J.Tsf.2005.07.077  0.409
2006 Wang X, Li SS, Kim WK, Yoon S, Craciun V, Howard JM, Easwaran S, Manasreh O, Crisalle OD, Anderson TJ. Investigation of rapid thermal annealing on Cu(In,Ga)Se2 films and solar cells Solar Energy Materials and Solar Cells. 90: 2855-2866. DOI: 10.1016/J.Solmat.2006.04.011  0.575
2006 Mastro MA, Kryliouk OM, Anderson TJ. Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 127: 91-97. DOI: 10.1016/J.Mseb.2005.09.008  0.65
2006 Kim WK, Payzant EA, Yoon S, Anderson TJ. In situ investigation on selenization kinetics of Cu-In precursor using time-resolved, high temperature X-ray diffraction Journal of Crystal Growth. 294: 231-235. DOI: 10.1016/J.Jcrysgro.2006.05.066  0.551
2006 Crunkleton DW, Narayanan R, Anderson TJ. Numerical simulations of periodic flow oscillations in low Prandtl number fluids International Journal of Heat and Mass Transfer. 49: 427-438. DOI: 10.1016/J.Ijheatmasstransfer.2004.09.009  0.688
2006 Crunkleton DW, Anderson TJ. A numerical study of flow and thermal fields in tilted Rayleigh-Bénard convection International Communications in Heat and Mass Transfer. 33: 24-29. DOI: 10.1016/J.Icheatmasstransfer.2005.09.004  0.698
2006 Rawal S, Norton DP, Anderson TJ, McElwee-White L. Investigation of W-Ge-N deposited on Ge as a diffusion barrier for Cu metallization Applied Physics A. 85: 325-329. DOI: 10.1007/S00339-006-3686-X  0.444
2006 Repins IL, Stanbery BJ, Young DL, Li SS, Metzger WK, Perkins CL, Shafarman WN, Beck ME, Chen L, Kapur VK, Tarrant D, Gonzalez MD, Jensen DG, Anderson TJ, Wang X, et al. Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells Progress in Photovoltaics: Research and Applications. 14: 25-43. DOI: 10.1002/Pip.654  0.661
2005 Bchir OJ, Green KM, Ajmera HM, Zapp EA, Anderson TJ, Brooks BC, Reitfort LL, Powell DH, Abboud KA, McElwee-White L. Tungsten allylimido complexes Cl4(RCN)W(NC3H5) as single-source CVD precursors for WNxCy thin films. Correlation of precursor fragmentation to film properties. Journal of the American Chemical Society. 127: 7825-33. PMID 15913372 DOI: 10.1021/Ja043799D  0.806
2005 Wang X, Li SS, Craciun V, Yoon S, Howard JM, Easwaran S, Manasreh O, Crisalle OD, Anderson TJ. Rapid Thermal Annealing on Cu(In,Ga)Se 2 Films and Solar Cells Mrs Proceedings. 865. DOI: 10.1557/Proc-865-F14.31  0.4
2005 Park HJ, Kang SW, Kryliouk O, Anderson T. Morphological study of InN films and nanorods grown by H-MOVPE Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff11-09  0.66
2005 Hwang JY, Park C, Huang M, Anderson T. Numerical Procedure to Extract Physical Properties from Raman Scattering Data in a Flow Reactor Journal of the Electrochemical Society. 152: C334. DOI: 10.1149/1.1885366  0.597
2005 Park C, Kim J, Yoon D, Han S, Doh C, Yeo S, Lee K, Anderson TJ. Identification of a Gallium-Containing Carbon Deposit Produced by Decomposition of Trimethyl Gallium Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1873452  0.415
2005 Varanasi VG, Besmann TM, Anderson TJ. Equilibrium Analysis of CVD of Yttria-Stabilized Zirconia Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1828951  0.367
2005 Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ. Pt-coated InN nanorods for selective detection of hydrogen at room temperature Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1891. DOI: 10.1116/1.2008268  0.32
2005 Kim S, Kim WK, Kaczynski RM, Acher RD, Yoon S, Anderson TJ, Crisalle OD, Payzant EA, Li SS. Reaction kinetics of CuInSe 2 thin films grown from bilayer InSe/CuSe precursors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 310-315. DOI: 10.1116/1.1861051  0.527
2005 Rawal S, Norton DP, Anderson TJ, McElwee-White L. Properties of W–Ge–N as a diffusion barrier material for Cu Applied Physics Letters. 87: 111902. DOI: 10.1063/1.2042534  0.431
2005 Wang X, Li SS, Huang CH, Rawal S, Howard JM, Craciun V, Anderson TJ, Crisalle OD. Investigation of pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells Solar Energy Materials and Solar Cells. 88: 65-73. DOI: 10.1016/J.Solmat.2004.06.020  0.363
2005 Kim WK, Kim S, Payzant EA, Speakman SA, Yoon S, Kaczynski RM, Acher RD, Anderson TJ, Crisalle OD, Li SS, Craciun V. Reaction kinetics of α-CuInSe2 formation from an In 2Se3/CuSe bilayer precursor film Journal of Physics and Chemistry of Solids. 66: 1915-1919. DOI: 10.1016/J.Jpcs.2005.09.074  0.58
2005 Yoon S, Kim S, Craciun V, Kim WK, Kaczynski R, Acher R, Anderson TJ, Crisalle OD, Li SS. Effect of a Cu-Se secondary phase on the epitaxial growth of CuInSe 2 on (1 0 0) GaAs Journal of Crystal Growth. 281: 209-219. DOI: 10.1016/J.Jcrysgro.2005.03.043  0.575
2005 Hwang JY, Park C, Huang M, Anderson T. Investigation of mass transport phenomena in an upflow cold-wall CVD reactor by gas phase Raman spectroscopy and modeling Journal of Crystal Growth. 279: 521-530. DOI: 10.1016/J.Jcrysgro.2005.02.037  0.599
2005 Mastro MA, Kryliouk OM, Anderson TJ, Davydov A, Shapiro A. Influence of polarity on GaN thermal stability Journal of Crystal Growth. 274: 38-46. DOI: 10.1016/J.Jcrysgro.2004.09.091  0.606
2005 Reed MD, Kryliouk OM, Mastro MA, Anderson TJ. Growth and characterization of single-crystalline gallium nitride using (1 0 0) LiAlO2 substrates Journal of Crystal Growth. 274: 14-20. DOI: 10.1016/J.Jcrysgro.2004.09.079  0.737
2005 Kang SW, Park HJ, Kim T, Dann T, Kryliouk O, Anderson T. The influence of interdiffusion on strain energy in the GaN–sapphire system Physica Status Solidi (C). 2: 2420-2423. DOI: 10.1002/Pssc.200461562  0.663
2005 Park HJ, Park C, Yeo S, Kang S, Mastro M, Kryliouk O, Anderson TJ. Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy Physica Status Solidi (C). 2: 2446-2449. DOI: 10.1002/Pssc.200461513  0.683
2004 Wang J, Zhu M, Zhao X, Outlaw RA, Manos DM, Holloway BC, Park C, Anderson T, Mammana VP. Synthesis and field-emission testing of carbon nanoflake edge emitters Journal of Vacuum Science & Technology B. 22: 1269-1272. DOI: 10.1116/1.1701851  0.344
2004 Craciun V, Craciun D, Wang X, Anderson TJ, Singh RK. Highly conducting indium tin oxide films grown by ultraviolet-assisted pulsed laser deposition at low temperatures Thin Solid Films. 453: 256-261. DOI: 10.1016/J.Tsf.2003.11.132  0.499
2004 Kerr LL, Li SS, Johnston SW, Anderson TJ, Crisalle OD, Kim WK, Abushama J, Noufi RN. Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy Solid-State Electronics. 48: 1579-1586. DOI: 10.1016/J.Sse.2004.03.005  0.655
2004 Bchir OJ, Green KM, Hlad MS, Anderson TJ, Brooks BC, McElwee-White L. Tungsten nitride thin films deposited by MOCVD: Sources of carbon and effects on film structure and stoichiometry Journal of Crystal Growth. 261: 280-288. DOI: 10.1016/J.Jcrysgro.2003.11.018  0.814
2003 Howard AJ, Pathangey B, Hayakawa Y, Anderson TJ, Blaauw C, SpringThorpe AJ. Application of the point-defect analysis technique to zinc doping of MOCVD indium phosphide Semiconductor Science and Technology. 18: 723-728. DOI: 10.1088/0268-1242/18/8/301  0.317
2003 Bchir OJ, Green KM, Hlad MS, Anderson TJ, Brooks BC, Wilder CB, Powell DH, McElwee-White L. Cl4(PhCN)W(NPh) as a single-source MOCVD precursor for deposition of tungsten nitride (WNx) thin films Journal of Organometallic Chemistry. 684: 338-350. DOI: 10.1016/S0022-328X(03)00769-1  0.829
2003 Bchir OJ, Johnston SW, Cuadra AC, Anderson TJ, Ortiz CG, Brooks BC, Powell DH, McElwee-White L. MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr) Journal of Crystal Growth. 249: 262-274. DOI: 10.1016/S0022-0248(02)02145-0  0.823
2002 Mastro MA, Kryliouk O, Dann T, Anderson TJ, Nikolaev AE, Melnik YV, Dmitriev V. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates Materials Science Forum. 1473-1476. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1473  0.31
2002 Zhang A, Ren F, Anderson T, Abernathy C, Singh R, Holloway P, Pearton S, Palmer D, McGuire G. High-Power GaN Electronic Devices Critical Reviews in Solid State and Materials Sciences. 27: 1-71. DOI: 10.1080/20014091104206  0.315
2002 Stanbery BJ, Kincal S, Kim S, Chang CH, Ahrenkiel SP, Lippold G, Neumann H, Anderson TJ, Crisalle OD. Epitaxial growth and characterization of CuInSe2 crystallographic polytypes Journal of Applied Physics. 91: 3598-3604. DOI: 10.1063/1.1446234  0.735
2002 Park C, Jung WS, Huang Z, Anderson TJ. In situ Raman spectroscopic studies of trimethylindium pyrolysis in an OMVPE reactor Journal of Materials Chemistry. 12: 356-360. DOI: 10.1039/B107586A  0.319
2002 Park C, Yeon Hwang J, Huang M, Anderson TJ. Investigation of an upflow cold-wall CVD reactor by gas phase Raman spectroscopy Thin Solid Films. 409: 88-97. DOI: 10.1016/S0040-6090(02)00109-8  0.43
2002 Luo B, Johnson JW, Kryliouk O, Ren F, Pearton SJ, Chu SNG, Nikolaev AE, Melnik YV, Dmitriev VA, Anderson TJ. High breakdown M–I–M structures on bulk AlN Solid-State Electronics. 46: 573-576. DOI: 10.1016/S0038-1101(01)00299-4  0.302
2002 Shen J, Johnston S, Shang S, Anderson T. Calculated strain energy of hexagonal epitaxial thin films Journal of Crystal Growth. 240: 6-13. DOI: 10.1016/S0022-0248(01)02209-6  0.629
2001 Chang C-, Wei S, Ahrenkiel SP, Johnson JW, Stanbery BJ, Anderson TJ, Zhang SB, Al-Jassim MM, Bunker G, Payzant EA, Duran R. Structure Investigations of Several In-rich (Cu 2 Se) x (In 2 Se 3 ) 1−x Compositions: From Local Structure to Long Range Order Mrs Proceedings. 668. DOI: 10.1557/Proc-668-H4.3  0.667
2001 Griglione M, Anderson TJ, Law ME, Jones KS, Bogaard Avd, Puga-Lambers M. Diffusion of single quantum well Si1−xGex/Si layers under vacancy supersaturation Journal of Applied Physics. 89: 2904-2906. DOI: 10.1063/1.1341208  0.32
2001 Huang CH, Li SS, Shafarman WN, Chang CH, Lambers ES, Rieth L, Johnson JW, Kim S, Stanbery BJ, Anderson TJ, Holloway PH. Study of Cd-free buffer layers using Inx(OH,S)y on CIGS solar cells Solar Energy Materials and Solar Cells. 69: 131-137. DOI: 10.1016/S0927-0248(00)00386-X  0.748
2001 Mastro MA, Kryliouk OM, Reed MD, Anderson TJ, Davydov A, Shapiro A. Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2 Physica Status Solidi (a) Applied Research. 188: 467-471. DOI: 10.1002/1521-396X(200111)188:1<467::Aid-Pssa467>3.0.Co;2-1  0.713
2000 Chang C, Wei S, Johnson W, Bhattacharya R, Stanbery B, Anderson T, Duran R. Long and Short Range Ordering of CuInSe2 Japanese Journal of Applied Physics. 39: 411. DOI: 10.7567/Jjaps.39S1.411  0.709
2000 Griglione M, Anderson TJ, Haddara YM, Law ME, Jones KS, Bogaard Avd. Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients Journal of Applied Physics. 88: 1366-1372. DOI: 10.1063/1.373825  0.308
1999 Stanbery BJ, Chang C-, Kim S, Kincal S, Lippold G, Ahrenkiel SP, Li L, Anderson TJ, Al-Jassim MM. Epitaxial Growth of CuAu–Ordered CuInSe 2 Structural Polytypes by Migration Enhanced Epitaxy Mrs Proceedings. 583: 195. DOI: 10.1557/Proc-583-195  0.676
1999 Lowrey R, Doyle M, Anderson T. A Novel Fluorine Production Process In A Proton Exchange Membrane Reactor Electrochemical and Solid State Letters. 2: 519-521. DOI: 10.1149/1.1390889  0.737
1999 Kryliouk O, Reed M, Dann T, Anderson T, Chai B. Large area GaN substrates Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 66: 26-29. DOI: 10.1016/S0921-5107(99)00114-2  0.617
1999 Kryliouk O, Reed M, Dann T, Anderson T, Chai B. Growth of GaN single crystal substrates Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 6-11. DOI: 10.1016/S0921-5107(98)00403-6  0.604
1999 Probst KJ, Besmann TM, Stinton DP, Lowden RA, Anderson TJ, Starr TL. Recent advances in forced-flow, thermal-gradient CVI for refractory composites Surface and Coatings Technology. 120: 250-258. DOI: 10.1016/S0257-8972(99)00459-4  0.757
1999 Kryliouk O, Reed M, Mastro M, Anderson T, Chai B. GaN substrates: Growth and characterization Physica Status Solidi (a) Applied Research. 176: 407-410. DOI: 10.1002/(Sici)1521-396X(199911)176:1<407::Aid-Pssa407>3.0.Co;2-Q  0.671
1998 Griglione M, Anderson T, Haddara Y, Law M, Jones K. Interdiffusion Behavior of Si/Si 1−x Ge x . Layers in Inert and Oxidizing Ambients Mrs Proceedings. 532: 119. DOI: 10.1557/Proc-532-119  0.319
1998 Lee JW, Pathangey B, Davidson MR, Holloway PH, Lambers ES, Davydov B, Anderson TJ, Pearton SJ. Comparison of plasma chemistries for dry etching thin film electroluminescent display materials Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 2177-2186. DOI: 10.1116/1.581326  0.362
1998 Lee JW, Pathangey B, Davidson MR, Holloway PH, Lambers ES, Davydov A, Anderson TJ, Pearton SJ. Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 1944-1948. DOI: 10.1116/1.581201  0.321
1997 Burgess DR, Hotsenpiller PAM, Kryliouk O, Anderson TJ. Humidity Effects on the Electrical Properties of Epitaxial Rutile Thin Films Mrs Proceedings. 497: 225. DOI: 10.1557/Proc-497-225  0.452
1997 Chang C, Stanbery B, Morrone A, Davydov A, Anderson T. Novel Multilayer Process for CuInSe 2 Thin Film Formation by Rapid Thermal Processing Mrs Proceedings. 485. DOI: 10.1557/Proc-485-163  0.784
1997 Li J, Kryliouk OM, Holloway PH, Anderson TJ, Jones KS. Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 468. DOI: 10.1557/Proc-468-167  0.474
1996 Kryliouk OM, Dann TW, Anderson TJ, Maruska HP, Zhu LD, Daly JT, Lin M, Norris P, Chai HT, Kisker DW, Li JH, Jones KS. MOCVD growth of GaN films on lattice-matched oxide substrates Mrs Proceedings. 449: 123. DOI: 10.1557/Proc-449-123  0.433
1996 Burgess DR, Hotsenpiller PAM, Anderson TJ, Hohman JL. Solid precursor MOCVD of heteroepitaxial rutile phase TiO2 Journal of Crystal Growth. 166: 763-768. DOI: 10.1016/0022-0248(95)00538-2  0.441
1995 Huang JW, Kuech TF, Anderson TJ. Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide Applied Physics Letters. 67: 1116. DOI: 10.1063/1.114979  0.316
1994 Holloway PH, Yu J, Rack P, Sebastian J, Jones S, Trottier T, Jones KS, Pathangey B, Anderson T, Sun S, Tuenge R, Dickey E, King C. Blue And Yellow Light Emitting Phosphors For Thin Film Electroluminescent Displays Mrs Proceedings. 345. DOI: 10.1557/Proc-345-289  0.406
1994 Yu JE, Jones KS, Holloway PH, Pathangey B, Bretschneider E, Anderson TJ, Sun SS, King CN. Temperature and flow modulation doping of manganese in ZnS electroluminescent films by low pressure metalorganic chemical vapor deposition Journal of Electronic Materials. 23: 299-305. DOI: 10.1007/Bf02670639  0.399
1993 Watson GP, Ast DG, Anderson TJ, Pathangey B. The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates Journal of Applied Physics. 74: 3103-3110. DOI: 10.1063/1.354576  0.325
1993 Matragrano MJ, Watson GP, Ast DG, Anderson TJ, Pathangey B. Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs Applied Physics Letters. 62: 1417-1419. DOI: 10.1063/1.108697  0.313
1993 Fang J, Holloway PH, Yu JE, Jones KS, Pathangey B, Brettschneider E, Anderson TJ. MOCVD growth of non-epitaxial and epitaxial ZnS thin films Applied Surface Science. 701-706. DOI: 10.1016/0169-4332(93)90605-B  0.497
1992 Yu JE, Jones KS, Fang J, Holloway PH, Pathangey B, Bretschneider E, Anderson TJ. Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices Mrs Proceedings. 242. DOI: 10.1557/Proc-242-215  0.479
1992 Watson GP, Ast DG, Anderson TJ, Pathangey B, Hayakawa Y. The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates Journal of Applied Physics. 71: 3399-3407. DOI: 10.1063/1.350936  0.313
1992 Rees WS, Green DM, Anderson TJ, Bretschneider E, Pathangey B, Park C, Kim J. Evaluation of Zn{N[Si(CH3)3]2}2 as a p-type dopant in OMVPE growth of ZnSe Journal of Electronic Materials. 21: 361-366. DOI: 10.1007/Bf02660467  0.385
1992 Park C, Ban VS, Olsen GH, Anderson TJ, Quinlan KP. Process characterization and evaluation of hydride VPE grown Ga x In1-x As using a Ga/In alloy source Journal of Electronic Materials. 21: 447-454. DOI: 10.1007/Bf02660410  0.392
1991 Watson GP, Ast DG, Anderson TJ, Hayakawa Y. Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates Applied Physics Letters. 58: 2517-2519. DOI: 10.1063/1.104862  0.321
1991 Deneuville A, Park C, Ayyub P, Anderson T, Lowen P, Jones K, Holloway P. O implantation in ZnSe: lattice distortion by Raman measurement Applied Surface Science. 50: 308-311. DOI: 10.1016/0169-4332(91)90188-P  0.307
1991 Watson GP, Ast DG, Anderson TJ, Hayakawa Y, Pathangey B. The thermal stability of lattice mismatched InGaAs grown on patterned GaAs Journal of Electronic Materials. 20: 703-708. DOI: 10.1007/Bf02665955  0.389
1990 Deneuville A, Ayyub P, Park CH, Anderson T, Lowen P, Jones K, Holloway PH. Raman Studies of Znse Lattice Damage and Recovery Due to N Implantation and Annealing Mrs Proceedings. 209. DOI: 10.1557/Proc-209-457  0.315
1987 Anderson TJ, Colinet C, Chatillon C, Tmar M. Calorimetric and knudsen effusive studies of the thermochemical properties of GaxIn1-xP alloys Journal of Crystal Growth. 83: 252-260. DOI: 10.1016/0022-0248(87)90015-7  0.302
1985 Stassinos EC, Anderson TJ, Lee HH. A mechanism and kinetics of silicon growth Journal of Crystal Growth. 73: 21-30. DOI: 10.1016/0022-0248(85)90325-2  0.316
1983 Anderson TJ, Aselage TL, Donaghey LF. Solid-state electrochemical study of (gallium + antimony) liquid alloys The Journal of Chemical Thermodynamics. 15: 927-940. DOI: 10.1016/0021-9614(83)90126-X  0.717
1977 Anderson TJ, Donaghey LF. Solid-state electrochemical study of the standard Gibbs energy of formation of indium sesquioxide The Journal of Chemical Thermodynamics. 9: 617-628. DOI: 10.1016/0021-9614(77)90087-8  0.712
1977 Anderson TJ, Donaghey LF. Solid-state electrochemical study of the standard Gibbs energy of formation of β-gallium sesquioxide using a calcia-stabilized zirconia electrolyte The Journal of Chemical Thermodynamics. 9: 603-615. DOI: 10.1016/0021-9614(77)90086-6  0.723
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