Sayed Hasan, Ph.D.

Affiliations: 
2006 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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"Sayed Hasan"

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Mark S. Lundstrom grad student 2006 Purdue
 (Electron phonon interaction in carbon nanotube devices.)
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Publications

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Kim R, Rakshit T, Kotlyar R, et al. (2011) Effects of surface orientation on the performance of idealized IIIV thin-body ballistic n-MOSFETs Ieee Electron Device Letters. 32: 746-748
Koswatta SO, Hasan S, Lundstrom MS, et al. (2007) Nonequilibrium Green's function treatment of phonon scattering in carbon-nanotube transistors Ieee Transactions On Electron Devices. 54: 2339-2351
Hasan S, Salahuddin S, Vaidyanathan M, et al. (2006) High-frequency performance projections for ballistic carbon-nanotube transistors Ieee Transactions On Nanotechnology. 5: 14-21
Hasan S, Alam MA, Lundstrom M. (2006) Simulation of carbon nanotube FETs including hot-phonon and self-heating effects Technical Digest - International Electron Devices Meeting, Iedm
Koswatta SO, Hasan S, Lundstrom MS, et al. (2006) Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias Applied Physics Letters. 89
Guo J, Hasan S, Javey A, et al. (2005) Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors Ieee Transactions On Nanotechnology. 4: 715-721
Hasan S, Wang J, Lundstrom M. (2004) Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study Solid-State Electronics. 48: 867-875
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