Lloyd W. Massengill
Affiliations: | Electrical Engineering | Vanderbilt University, Nashville, TN |
Area:
Electronics and Electrical Engineering, Computer Engineering, Aerospace EngineeringWebsite:
https://engineering.vanderbilt.edu/bio/lloyd-massengillGoogle:
"Lloyd Massengill"Bio:
https://www.proquest.com/openview/759b2569a811e7fc5ff0f09cdb2209db/1
Parents
Sign in to add mentor| Sherra E. Kerns | grad student | 1987 | NCSU (Physics Tree) | |
| (The Simulation of Pulsed-ionizing - radiation-induced Errors in CMOS Memory Circuits) | ||||
Children
Sign in to add trainee| Younes Boulghassoul | grad student | 2005 | Vanderbilt |
| Andrew L. Sternberg | grad student | 2006 | Vanderbilt |
| Oluwole A. Amusan | grad student | 2009 | Vanderbilt |
| Sarah E. Armstrong | grad student | 2011 | Vanderbilt |
| Jonathan R. Ahlbin | grad student | 2013 | Vanderbilt |
| Pierre Maillard | grad student | 2014 | Vanderbilt |
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Publications
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| Richards EW, Loveless TD, Kauppila JS, et al. (2020) Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI Ieee Transactions On Nuclear Science. 67: 1144-1151 |
| Loveless TD, Patel B, Reising DR, et al. (2020) Ionizing Radiation Effects Spectroscopy for Analysis of Single-Event Transients Ieee Transactions On Nuclear Science. 67: 99-107 |
| Harrington RC, Kauppila JS, Maharrey JA, et al. (2019) Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage Ieee Transactions On Nuclear Science. 66: 1427-1432 |
| Harrington RC, Kauppila JS, Maharrey JA, et al. (2019) Exploiting SEU Data Analysis to Extract Fast SET Pulses Ieee Transactions On Nuclear Science. 66: 932-937 |
| Kauppila JS, Ball DR, Maharrey JA, et al. (2019) A Bias-Dependent Single-Event-Enabled Compact Model for Bulk FinFET Technologies Ieee Transactions On Nuclear Science. 66: 635-642 |
| Patel B, Joplin M, Boggs RC, et al. (2019) Ionizing Radiation Effects Spectroscopy for Analysis of Total-Ionizing Dose Degradation in RF Circuits Ieee Transactions On Nuclear Science. 66: 61-68 |
| Harrington RC, Maharrey JA, Kauppila JS, et al. (2018) Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation Ieee Transactions On Nuclear Science. 65: 1807-1813 |
| Jiang H, Zhang H, Chatterjee I, et al. (2018) Power-Aware SE Analysis of Different FF Designs at the 14-/16-nm Bulk FinFET CMOS Technology Node Ieee Transactions On Nuclear Science. 65: 1866-1871 |
| Trippe JM, Reed RA, Austin RA, et al. (2018) Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model Ieee Transactions On Nuclear Science. 65: 712-718 |
| Ball DR, Alles ML, Kauppila JS, et al. (2018) The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops Ieee Transactions On Nuclear Science. 65: 326-330 |