Masayoshi Esashi, Ph.D.
Affiliations: | Tohoku University, Sendai-shi, Miyagi-ken, Japan |
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"Masayoshi Esashi"Children
Sign in to add trainee| Shinya Yoshida | grad student | Tohoku University | |
| Takahito Ono | research scientist | Tohoku University | |
| Shuji Tanaka | research scientist | Tohoku University |
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Publications
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| Esashi M, Tanaka S, Aoyagi S, et al. (2020) Special Issue on MEMS for Robotics and Mechatronics Journal of Robotics and Mechatronics. 32: 279-280 |
| Ou C, Lin Y, Keikoin Y, et al. (2019) Two-dimensional MEMS Fe-based metallic glass micromirror driven by an electromagnetic actuator Japanese Journal of Applied Physics. 58: SDDL01 |
| Iguchi F, Kubota K, Inagaki Y, et al. (2019) Low Temperature Operating Micro Solid Oxide Fuel Cells with Perovskite Type Proton Conductors Ecs Transactions. 35: 777-783 |
| Satoh S, Fukushi H, Esashi M, et al. (2018) Comprehensive Die Shear Test of Silicon Packages Bonded by Thermocompression of Al Layers with Thin Sn Capping or Insertions. Micromachines. 9 |
| Makihata M, Muroyama M, Tanaka S, et al. (2018) Design and Fabrication Technology of Low Profile Tactile Sensor with Digital Interface for Whole Body Robot Skin. Sensors (Basel, Switzerland). 18 |
| SATOH S, FUKUSHI H, ESASHI M, et al. (2018) Role of Thin Sn Layer for Low Temperature Al-Al Thermo-compression Bonding of Wafer-Level Hermetic Sealing Electronics and Communications in Japan. 101: 33-40 |
| Esashi M, Tanaka S. (2017) Heterogeneous Integration of MEMS on LSI Journal of Japan Institute of Electronics Packaging. 20: 372-375 |
| Zhang G, Anand A, Hikichi K, et al. (2017) A 1.9GHz Low-Phase-Noise Complementary Cross-Coupled FBAR-VCO without Additional Voltage Headroom in 0.18µm CMOS Technology Ieice Transactions On Electronics. 363-369 |
| Satoh S, Fukushi H, Esashi M, et al. (2017) Role of Thin Sn Layer for Low Temperature Al-Al Thermo-compression Bonding of Wafer-level Hermetic Sealing Ieej Transactions On Sensors and Micromachines. 137: 432-437 |
| SATOH S, FUKUSHI H, ESASHI M, et al. (2017) Low-Temperature Al-Al Thermocompression Bonding with Sn Oxidation Protect Layer for Wafer-Level Hermetic Sealing Electronics and Communications in Japan. 100: 43-50 |