| Year |
Citation |
Score |
| 2019 |
Barton A, Walsh LA, Smyth CM, Qin X, Addou R, Cormier C, Hurley PK, Wallace RM, Hinkle CL. Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator BiSe. Acs Applied Materials & Interfaces. PMID 31416305 DOI: 10.1021/Acsami.9B10625 |
0.397 |
|
| 2019 |
Smyth CM, Addou R, Hinkle CL, Wallace RM. Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment The Journal of Physical Chemistry C. 123: 23919-23930. DOI: 10.1021/Acs.Jpcc.0C01646 |
0.364 |
|
| 2018 |
Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth. Advanced Materials (Deerfield Beach, Fla.). e1803109. PMID 30022534 DOI: 10.1002/Adma.201803109 |
0.367 |
|
| 2018 |
Walsh LA, Green AJ, Addou R, Nolting W, Cormier CR, Barton AT, Mowll TR, Yue R, Lu N, Kim J, Kim MJ, LaBella VP, Ventrice CA, McDonnell S, Vandenberghe WG, ... ... Hinkle CL, et al. Fermi Level Manipulation Through Native Doping in the Topological Insulator BiSe. Acs Nano. PMID 29874037 DOI: 10.1021/Acsnano.8B03414 |
0.347 |
|
| 2018 |
Chapman RA, Rodriguez-Davila RA, Vandenberghe WG, Hinkle CL, Mejia I, Chatterjee A, Quevedo-Lopez MA. Quantum Confinement and Interface States in ZnO Nanocrystalline Thin-Film Transistors Ieee Transactions On Electron Devices. 65: 1787-1795. DOI: 10.1109/Ted.2018.2816908 |
0.328 |
|
| 2018 |
Bolshakov P, Khosravi A, Zhao P, Hurley PK, Hinkle CL, Wallace RM, Young CD. Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics Applied Physics Letters. 112: 253502. DOI: 10.1063/1.5027102 |
0.359 |
|
| 2018 |
Khosravi A, Addou R, Smyth CM, Yue R, Cormier CR, Kim J, Hinkle CL, Wallace RM. Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2 Apl Materials. 6: 026603. DOI: 10.1063/1.5002132 |
0.326 |
|
| 2017 |
Dong H, Gong C, Addou R, McDonnell S, Azcatl A, Qin X, Wang W, Wang WH, Hinkle CL, Wallace RM. Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy. Acs Applied Materials & Interfaces. PMID 29035026 DOI: 10.1021/Acsami.7B10974 |
0.333 |
|
| 2017 |
Zhao P, Azcatl A, Gomeniuk YY, Bolshakov P, Schmidt M, McDonnell SJ, Hinkle CL, Hurley PK, Wallace RM, Young C. Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy. Acs Applied Materials & Interfaces. PMID 28650155 DOI: 10.1021/Acsami.7B06204 |
0.429 |
|
| 2017 |
Zhao P, Azcatl A, Bolshakov P, Moon J, Hinkle CL, Hurley PK, Wallace RM, Young CD. Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 01A118. DOI: 10.1116/1.4974220 |
0.388 |
|
| 2017 |
Anwar SRM, Vandenberghe WG, Bersuker G, Veksler D, Verzellesi G, Morassi L, Galatage RV, Jha S, Buie C, Barton AT, Vogel EM, Hinkle CL. Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data Ieee Transactions On Electron Devices. 64: 3794-3801. DOI: 10.1109/Ted.2017.2725741 |
0.313 |
|
| 2017 |
Anwar SRM, Vandenberghe WG, Bersuker G, Veksler D, Verzellesi G, Morassi L, Galatage RV, Jha S, Buie C, Barton AT, Vogel EM, Hinkle CL. Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on Si x Ge 1− x and In x Ga 1− x As: Part I—Model Description and Validation Ieee Transactions On Electron Devices. 64: 3786-3793. DOI: 10.1109/Ted.2017.2725645 |
0.371 |
|
| 2017 |
Walsh LA, Smyth CM, Barton AT, Wang Q, Che Z, Yue R, Kim J, Kim MJ, Wallace RM, Hinkle CL. Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2Se3 Journal of Physical Chemistry C. 121: 23551-23563. DOI: 10.1021/Acs.Jpcc.7B08480 |
0.324 |
|
| 2017 |
Walsh LA, Mohammed S, Sampat SC, Chabal YJ, Malko AV, Hinkle CL. Oxide-related defects in quantum dot containing Si-rich silicon nitride films Thin Solid Films. 636: 267-272. DOI: 10.1016/J.Tsf.2017.06.022 |
0.443 |
|
| 2017 |
Walsh LA, Hinkle CL. van der Waals epitaxy: 2D materials and topological insulators Applied Materials Today. 9: 504-515. DOI: 10.1016/J.Apmt.2017.09.010 |
0.34 |
|
| 2016 |
McDonnell S, Smyth C, Hinkle CL, Wallace RM. MoS2-Titanium Contact Interface Reactions. Acs Applied Materials & Interfaces. PMID 26967016 DOI: 10.1021/Acsami.6B00275 |
0.399 |
|
| 2016 |
Smyth CM, Addou R, McDonnell S, Hinkle CL, Wallace RM. Contact metal-MoS2 interfacial reactions and potential implications on MoS2-based device performance Journal of Physical Chemistry C. 120: 14719-14729. DOI: 10.1021/Acs.Jpcc.6B04473 |
0.347 |
|
| 2015 |
Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, Wang J, Zhu H, Hinkle CL, Quevedo-Lopez M, Alshareef HN, Colombo L, Hsu JW, Wallace RM. Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces. Acs Nano. PMID 26301428 DOI: 10.1021/Acsnano.5B03309 |
0.362 |
|
| 2015 |
Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, ... ... Hinkle CL, et al. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy. Acs Nano. 9: 474-80. PMID 25496648 DOI: 10.1021/Nn5056496 |
0.378 |
|
| 2015 |
Barton AT, Yue R, Anwar S, Zhu H, Peng X, McDonnell S, Lu N, Addou R, Colombo L, Kim MJ, Wallace RM, Hinkle CL. Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy Microelectronic Engineering. 147: 306-309. DOI: 10.1016/J.Mee.2015.04.105 |
0.396 |
|
| 2015 |
Zhao P, Vyas PB, McDonnell S, Bolshakov-Barrett P, Azcatl A, Hinkle CL, Hurley PK, Wallace RM, Young CD. Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics Microelectronic Engineering. 147: 151-154. DOI: 10.1016/J.Mee.2015.04.078 |
0.381 |
|
| 2014 |
Dong H, Cabrera W, Qin X, Brennan B, Zhernokletov D, Hinkle CL, Kim J, Chabal YJ, Wallace RM. Silicon interfacial passivation layer chemistry for high-k/InP interfaces. Acs Applied Materials & Interfaces. 6: 7340-5. PMID 24750024 DOI: 10.1021/Am500752U |
0.403 |
|
| 2014 |
McDonnell S, Addou R, Buie C, Wallace RM, Hinkle CL. Defect-dominated doping and contact resistance in MoS2. Acs Nano. 8: 2880-8. PMID 24484444 DOI: 10.1021/Nn500044Q |
0.312 |
|
| 2014 |
Mohammed S, Nimmo MT, Malko AV, Hinkle CL. Chemical bonding and defect states of LPCVD grown silicon-rich Si 3N4 for quantum dot applications Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4861338 |
0.443 |
|
| 2014 |
Galatage RV, Zhernokletov DM, Dong H, Brennan B, Hinkle CL, Wallace RM, Vogel EM. Accumulation capacitance frequency dispersion of III-V metal-insulator- semiconductor devices due to disorder induced gap states Journal of Applied Physics. 116. DOI: 10.1063/1.4886715 |
0.357 |
|
| 2013 |
McDonnell S, Brennan B, Azcatl A, Lu N, Dong H, Buie C, Kim J, Hinkle CL, Kim MJ, Wallace RM. HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability. Acs Nano. 7: 10354-61. PMID 24116949 DOI: 10.1021/Nn404775U |
0.391 |
|
| 2013 |
Brennan B, McDonnell S, Zhernokletov D, Dong H, Hinkle CL, Kim J, Wallace RM. In-situ studies of III-V surfaces and high-k atomic layer deposition Solid State Phenomena. 195: 90-94. DOI: 10.4028/Www.Scientific.Net/Ssp.195.90 |
0.378 |
|
| 2013 |
Dong H, Santosh KC, Qin X, Brennan B, McDonnell S, Zhernokletov D, Hinkle CL, Kim J, Cho K, Wallace RM. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP Journal of Applied Physics. 114. DOI: 10.1063/1.4825218 |
0.365 |
|
| 2013 |
Dong H, Brennan B, Qin X, Zhernokletov DM, Hinkle CL, Kim J, Wallace RM. In situ study of atomic layer deposition Al2O3 on GaP (100) Applied Physics Letters. 103. DOI: 10.1063/1.4821779 |
0.338 |
|
| 2013 |
Brennan B, Galatage RV, Thomas K, Pelucchi E, Hurley PK, Kim J, Hinkle CL, Vogel EM, Wallace RM. Chemical and electrical characterization of the HfO2/InAlAs interface Journal of Applied Physics. 114. DOI: 10.1063/1.4821021 |
0.384 |
|
| 2013 |
Dong H, Cabrera W, Galatage RV, Santosh K, Brennan B, Qin X, McDonnell S, Zhernokletov D, Hinkle CL, Cho K, Chabal YJ, Wallace RM. Indium diffusion through high-k dielectrics in high-k/InP stacks Applied Physics Letters. 103. DOI: 10.1063/1.4817932 |
0.37 |
|
| 2013 |
Qin X, Brennan B, Dong H, Kim J, Hinkle CL, Wallace RM. In situ atomic layer deposition study of HfO2 growth on NH 4OH and atomic hydrogen treated Al0.25Ga0.75N Journal of Applied Physics. 113. DOI: 10.1063/1.4812243 |
0.344 |
|
| 2013 |
Dong H, Brennan B, Zhernokletov D, Kim J, Hinkle CL, Wallace RM. In situ study of HfO2 atomic layer deposition on InP(100) Applied Physics Letters. 102. DOI: 10.1063/1.4803486 |
0.35 |
|
| 2013 |
Galatage RV, Dong H, Zhernokletov DM, Brennan B, Hinkle CL, Wallace RM, Vogel EM. Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors Applied Physics Letters. 102. DOI: 10.1063/1.4799660 |
0.435 |
|
| 2013 |
Chan J, Balakchiev M, Thron AM, Chapman RA, Riley D, Song SC, Jain A, Blatchford J, Shaw JB, Van Benthem K, Vogel EM, Hinkle CL. PtSi dominated Schottky barrier heights of Ni(Pt)Si contacts due to Pt segregation Applied Physics Letters. 102. DOI: 10.1063/1.4799277 |
0.347 |
|
| 2013 |
Thron AM, Pennycook TJ, Chan J, Luo W, Jain A, Riley D, Blatchford J, Shaw J, Vogel EM, Hinkle CL, Van Benthem K. Formation of pre-silicide layers below Ni1-xPt xSi/Si interfaces Acta Materialia. 61: 2481-2488. DOI: 10.1016/J.Actamat.2013.01.022 |
0.396 |
|
| 2012 |
Brennan B, Zhernokletov DM, Dong H, Hinkle CL, Kim J, Wallace RM. In situ surface pre-treatment study of GaAs and In 0.53Ga 0.47As Applied Physics Letters. 100. DOI: 10.1063/1.3702885 |
0.372 |
|
| 2012 |
Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C, Christensen M, Wimmer E, Niimi H, Li-Fatou A, Shaw JB, Chambers JJ. Gate-last TiN/HfO 2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition Applied Physics Letters. 100. DOI: 10.1063/1.3701165 |
0.41 |
|
| 2012 |
McDonnell S, Dong H, Hawkins JM, Brennan B, Milojevic M, Aguirre-Tostado FS, Zhernokletov DM, Hinkle CL, Kim J, Wallace RM. Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems Applied Physics Letters. 100. DOI: 10.1063/1.3700863 |
0.401 |
|
| 2012 |
Arreaga-Salas DE, Sra AK, Roodenko K, Chabal YJ, Hinkle CL. Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries Journal of Physical Chemistry C. 116: 9072-9077. DOI: 10.1021/Jp300787P |
0.352 |
|
| 2012 |
Thron A, van Benthem K, Chan J, Hinkle C, Pennycook T, Pennycook S, Jain A. Substitutional and Interstitial Diffusion of Ni across the NiSi/Si interface Microscopy and Microanalysis. 18: 344-345. DOI: 10.1017/S1431927612003571 |
0.324 |
|
| 2011 |
Galatage RV, Dong H, Zhernokletov DM, Brennan B, Hinkle CL, Wallace RM, Vogel EM. Effect of post deposition anneal on the characteristics of HfO 2/InP metal-oxide-semiconductor capacitors Applied Physics Letters. 99. DOI: 10.1063/1.3656001 |
0.446 |
|
| 2011 |
Milojevic M, Contreras-Guerrero R, O'Connor E, Brennan B, Hurley PK, Kim J, Hinkle CL, Wallace RM. In-situ characterization of Ga2O passivation of In 0.53Ga0.47As prior to high-k dielectric atomic layer deposition Applied Physics Letters. 99. DOI: 10.1063/1.3615666 |
0.384 |
|
| 2011 |
Chan J, Martinez NY, Fitzgerald JJD, Walker AV, Chapman RA, Riley D, Jain A, Hinkle CL, Vogel EM. Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering Applied Physics Letters. 99. DOI: 10.1063/1.3609874 |
0.33 |
|
| 2011 |
Sonnet AM, Galatage RV, Hurley PK, Pelucchi E, Thomas KK, Gocalinska A, Huang J, Goel N, Bersuker G, Kirk WP, Hinkle CL, Wallace RM, Vogel EM. On the calculation of effective electric field in In0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors Applied Physics Letters. 98. DOI: 10.1063/1.3588255 |
0.318 |
|
| 2011 |
Sonnet AM, Galatage RV, Hurley PK, Pelucchi E, Thomas K, Gocalinska A, Huang J, Goel N, Bersuker G, Kirk WP, Hinkle CL, Vogel EM. Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs Microelectronic Engineering. 88: 1083-1086. DOI: 10.1016/J.Mee.2011.03.120 |
0.344 |
|
| 2011 |
Wang W, Hinkle CL, Vogel EM, Cho K, Wallace RM. Is interfacial chemistry correlated to gap states for high-k/III-V interfaces? Microelectronic Engineering. 88: 1061-1065. DOI: 10.1016/J.Mee.2011.03.053 |
0.406 |
|
| 2011 |
Hinkle CL, Vogel EM, Ye PD, Wallace RM. Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications Current Opinion in Solid State and Materials Science. 15: 188-207. DOI: 10.1016/J.Cossms.2011.04.005 |
0.397 |
|
| 2011 |
Brennan B, Milojevic M, Hinkle CL, Aguirre-Tostado FS, Hughes G, Wallace RM. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As Applied Surface Science. 257: 4082-4090. DOI: 10.1016/J.Apsusc.2010.11.179 |
0.333 |
|
| 2010 |
Sonnet AM, Hinkle CL, Heh D, Bersuker G, Vogel EM. Impact of semiconductor and interface-state capacitance on metal/high-k/GaAs capacitance-voltage characteristics Ieee Transactions On Electron Devices. 57: 2599-2606. DOI: 10.1109/Ted.2010.2059029 |
0.317 |
|
| 2010 |
Hinkle CL, Galatage RV, Chapman RA, Vogel EM, Alshareef HN, Freeman C, Wimmer E, Niimi H, Li-Fatou A, Shaw JB, Chambers JJ. Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks Applied Physics Letters. 96. DOI: 10.1063/1.3353993 |
0.358 |
|
| 2009 |
Hinkle CL, Milojevic M, Vogel EM, Wallace RM. The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding Applied Physics Letters. 95. DOI: 10.1063/1.3249577 |
0.367 |
|
| 2009 |
Hinkle CL, Milojevic M, Brennan B, Sonnet AM, Aguirre-Tostado FS, Hughes GJ, Vogel EM, Wallace RM. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning Applied Physics Letters. 94. DOI: 10.1063/1.3120546 |
0.352 |
|
| 2009 |
Hinkle CL, Milojevic M, Vogel EM, Wallace RM. Surface passivation and implications on high mobility channel performance (Invited Paper) Microelectronic Engineering. 86: 1544-1549. DOI: 10.1016/J.Mee.2009.03.030 |
0.3 |
|
| 2008 |
Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243. DOI: 10.1116/1.2830692 |
0.696 |
|
| 2008 |
Milojevic M, Hinkle CL, Aguirre-Tostado FS, Kim HC, Vogel EM, Kim J, Wallace RM. Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces Applied Physics Letters. 93: 252905. DOI: 10.1063/1.3054348 |
0.351 |
|
| 2008 |
Milojevic M, Aguirre-Tostado FS, Hinkle CL, Kim HC, Vogel EM, Kim J, Wallace RM. Half-cycle atomic layer deposition reaction studies of Al2 O3 on In0.2 Ga0.8 As (100) surfaces Applied Physics Letters. 93. DOI: 10.1063/1.3033404 |
0.38 |
|
| 2008 |
Sonnet AM, Hinkle CL, Jivani MN, Chapman RA, Pollack GP, Wallace RM, Vogel EM. Performance enhancement of n -channel inversion type Inx Ga 1-x As metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer Applied Physics Letters. 93. DOI: 10.1063/1.2991340 |
0.431 |
|
| 2008 |
Hinkle CL, Sonnet AM, Milojevic M, Aguirre-Tostado FS, Kim HC, Kim J, Wallace RM, Vogel EM. Comparison of n -type and p -type GaAs oxide growth and its effects on frequency dispersion characteristics Applied Physics Letters. 93. DOI: 10.1063/1.2987428 |
0.308 |
|
| 2008 |
Aguirre-Tostado FS, Milojevic M, Choi KJ, Kim HC, Hinkle CL, Vogel EM, Kim J, Yang T, Xuan Y, Ye PD, Wallace RM. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates Applied Physics Letters. 93. DOI: 10.1063/1.2961003 |
0.467 |
|
| 2008 |
Aguirre-Tostado FS, Milojevic M, Hinkle CL, Vogel EM, Wallace RM, McDonnell S, Hughes GJ. Indium stability on InGaAs during atomic H surface cleaning Applied Physics Letters. 92. DOI: 10.1063/1.2919047 |
0.366 |
|
| 2008 |
Hinkle CL, Sonnet AM, Vogel EM, McDonnell S, Hughes GJ, Milojevic M, Lee B, Aguirre-Tostado FS, Choi KJ, Kim HC, Kim J, Wallace RM. GaAs interfacial self-cleaning by atomic layer deposition Applied Physics Letters. 92. DOI: 10.1063/1.2883956 |
0.393 |
|
| 2007 |
Hinkle CL, Sonnet AM, Vogel EM, McDonnell S, Hughes GJ, Milojevic M, Lee B, Aguirre-Tostado FS, Choi KJ, Kim J, Wallace RM. Frequency dispersion reduction and bond conversion on n -type GaAs by in situ surface oxide removal and passivation Applied Physics Letters. 91. DOI: 10.1063/1.2801512 |
0.39 |
|
| 2006 |
Lucovsky G, Hinkle CL, Fulton CC, Stoute NA, Seo H, Lüning J. Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry. 75: 2097-2101. DOI: 10.1016/J.Radphyschem.2005.07.062 |
0.719 |
|
| 2005 |
Lucovsky G, Lüning J, Stoute NA, Seo H, Hinkle CL, Ju B. Band edge traps at spectroscopically-detected O-atom vacancies in nanocrystalline ZrO2 and HfO2: An engineering solution for elimination of O-atom vacancy defects in non-crystalline ternary silicate alloys Ecs Transactions. 1: 381-392. DOI: 10.1149/1.2209287 |
0.43 |
|
| 2004 |
Niu D, Ashcraft RW, Hinkle C, Parsons GN. Effect of N 2 plasma on yttrium oxide and yttrium-oxynitride dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 445-451. DOI: 10.1116/1.1666880 |
0.55 |
|
| 2004 |
Soares GV, Bastos KP, Pezzi RP, Miotti L, Driemeier C, Baumvol IJR, Hinkle C, Lucovsky G. Nitrogen bonding, stability, and transport in AION films on Si Applied Physics Letters. 84: 4992-4994. DOI: 10.1063/1.1763230 |
0.546 |
|
| 2004 |
Edge LF, Schlom DG, Brewer RT, Chabal YJ, Williams JR, Chambers SA, Hinkle C, Lucovsky G, Yang Y, Stemmer S, Copel M, Holländer B, Schubert J. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon Applied Physics Letters. 84: 4629-4631. DOI: 10.1063/1.1759065 |
0.572 |
|
| 2004 |
Bastos KP, Pezzi RP, Miotti L, Soares GV, Driemeier C, Morais J, Baumvol IJR, Hinkle C, Lucovsky G. Thermal stability of plasma-nitrided aluminum oxide films on Si Applied Physics Letters. 84: 97-99. DOI: 10.1063/1.1638629 |
0.549 |
|
| 2004 |
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 (ZrO2) layers sandwiched between thicker SiO2 layers Surface Science. 566: 1185-1189. DOI: 10.1016/J.Susc.2004.06.084 |
0.689 |
|
| 2004 |
Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys Surface Science. 566: 772-776. DOI: 10.1016/J.Susc.2004.06.010 |
0.749 |
|
| 2004 |
Rayner GB, Kang D, Hinkle CL, Hong JG, Lucovsky G. Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity Microelectronic Engineering. 72: 304-309. DOI: 10.1016/j.mee.2004.01.008 |
0.739 |
|
| 2004 |
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices Microelectronic Engineering. 72: 257-262. DOI: 10.1016/J.Mee.2003.12.047 |
0.683 |
|
| 2004 |
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers Applied Surface Science. 234: 240-245. DOI: 10.1016/J.Apsusc.2004.05.076 |
0.687 |
|
| 2004 |
Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys Applied Surface Science. 234: 429-433. DOI: 10.1016/j.apsusc.2004.05.075 |
0.743 |
|
| 2003 |
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. A Novel Approach for Determination of Tunneling Mass, meff - Conduction Band Offset Energy, EB, Products for Advanced Gate Dielectrics The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2003.A-3-4 |
0.325 |
|
| 2003 |
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics Extended Abstracts of International Workshop On Gate Insulator, Iwgi 2003. 80-85. DOI: 10.1109/IWGI.2003.159189 |
0.64 |
|
| 2003 |
Hinkle C, Lucovsky G. Remote plasma-assisted nitridation (RPN): Applications to Zr and Hf silicate alloys and Al2O3 Applied Surface Science. 216: 124-132. DOI: 10.1016/S0169-4332(03)00499-9 |
0.511 |
|
| 2002 |
Johnson RS, Hong JG, Hinkle C, Lucovsky G. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1126-1131. DOI: 10.1116/1.1481872 |
0.707 |
|
| 2002 |
Johnson RS, Hong JG, Hinkle C, Lucovsky G. Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices Solid-State Electronics. 46: 1799-1805. DOI: 10.1016/S0038-1101(02)00152-1 |
0.714 |
|
| 1998 |
Hinds BJ, Wang F, Wolfe DM, Hinkle CL, Lucovsky G. Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiO2 matrix Journal of Non-Crystalline Solids. 227: 507-512. DOI: 10.1016/S0022-3093(98)00094-5 |
0.624 |
|
| 1998 |
Hinds BJ, Wang F, Wolfe DM, Hinkle CL, Lucovsky G. Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2171-2176. |
0.558 |
|
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