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Sylvia G. Spruytte, Ph.D. - Publications

Affiliations: 
2001 Stanford University, Palo Alto, CA 
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Krispin P, Spruytte SG, Harris JS, Ploog KH. Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy Applied Physics Letters. 80: 2120-2122. DOI: 10.1063/1.1463214  0.546
2001 Krispin P, Spruytte SG, Harris JS, Ploog KH. Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 90: 2405-2410. DOI: 10.1063/1.1391218  0.5
2001 Krispin P, Spruytte SG, Harris JS, Ploog KH. Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 89: 6294-6301. DOI: 10.1063/1.1370115  0.546
2001 Spruytte SG, Coldren CW, Harris JS, Wampler W, Krispin P, Ploog K, Larson MC. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal Journal of Applied Physics. 89: 4401-4406. DOI: 10.1063/1.1352675  0.711
2001 Krispin P, Spruytte SG, Harris JS, Ploog KH. Deep-level defects in MBE-grown Ga(As,N) layers Physica B-Condensed Matter. 308: 870-873. DOI: 10.1016/S0921-4526(01)00926-7  0.536
2001 Spruytte SG, Larson MC, Wampler W, Coldren CW, Petersen HE, Harris JS. Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy Journal of Crystal Growth. 227: 506-515. DOI: 10.1016/S0022-0248(01)00757-6  0.745
2000 Spruytte SG, Coldren CW, Marshall AF, Larson MC, Harris JS. MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Mrs Internet Journal of Nitride Semiconductor Research. 5: 474-480. DOI: 10.1557/S109257830000466X  0.688
2000 Coldren CW, Spruytte SG, Harris JS, Larson MC. Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1480. DOI: 10.1116/1.591408  0.738
2000 Larson MC, Coldren CW, Spruytte SG, Petersen HE, Harris JS. Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers Ieee Photonics Technology Letters. 12: 1598-1600. DOI: 10.1109/68.896319  0.728
2000 Krispin P, Spruytte SG, Harris JS, Ploog KH. Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements Journal of Applied Physics. 88: 4153. DOI: 10.1063/1.1290449  0.506
2000 Coldren C, Larson M, Spruytte S, Harris J. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electronics Letters. 36: 951. DOI: 10.1049/El:20000365  0.735
1999 Huang T, Marshall A, Spruytte S, Harris Jr J. Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition Journal of Crystal Growth. 200: 362-367. DOI: 10.1016/S0022-0248(98)01094-X  0.5
1998 Ueda T, Huang T, Spruytte S, Lee H, Yuri M, Itoh K, Baba T, Harris J. Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer Journal of Crystal Growth. 187: 340-346. DOI: 10.1016/S0022-0248(97)00886-5  0.533
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