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Balakrishnam R. Jampana, Ph.D. - Publications

Affiliations: 
2011 Department of Materials Science and Engineering University of Delaware, Newark, DE, United States 
Area:
Materials Science Engineering, Alternative Energy, Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Growth and characterization of InxGa1-xN alloys by metalorganic chemical vapor deposition for solar cell applications Journal of Photonics For Energy. 2. DOI: 10.1117/1.Jpe.2.028501  0.468
2012 Jampana BR, Weiland CR, Opila RL, Ferguson IT, Honsberg CB. Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire Thin Solid Films. 520: 6807-6812. DOI: 10.1016/J.Tsf.2012.07.003  0.608
2011 Jamil M, Xu T, Melton A, Jampana B, Ferguson IT. Development of free-standing InGaN LED devices on Al2O 3/Si substrate by wet etching Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/22/224014  0.41
2011 Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Compositional instability in strained InGaN epitaxial layers induced by kinetic effects Journal of Applied Physics. 110. DOI: 10.1063/1.3626434  0.454
2010 Jamil M, Xu T, Melton A, Jampana B, Zaidi T, Liu S, Ferguson I. Free-standing GaN-based LEDs with ALD-Al2O3Si substrate removed by wet etching Proceedings of Spie - the International Society For Optical Engineering. 7784. DOI: 10.1117/12.863785  0.442
2010 Jampana BR, Melton AG, Jamil M, Faleev NN, Opila RL, Ferguson IT, Honsberg CB. Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell Ieee Electron Device Letters. 31: 32-34. DOI: 10.1109/Led.2009.2034280  0.59
2010 Jamil M, Xu T, Zaidi T, Melton A, Jampana B, Tan CL, Ooi BS, Ferguson IT. Growth of pattern-free InN micropyramids by metalorganic chemical vapor deposition Physica Status Solidi (a) Applications and Materials Science. 207: 1895-1899. DOI: 10.1002/Pssa.200925462  0.394
2009 Jampana BR, Faleev NN, Ferguson IT, Opila RL, Honsberg CB. Crystalline perfection of epitaxial structure: Correlation with composition, thickness, and elastic strain of epitaxial layers Materials Research Society Symposium Proceedings. 1167: 71-76. DOI: 10.1557/Proc-1167-O07-04  0.645
2009 Jampana BR, Ferguson IT, Opila RL, Honsberg CB. Utilizing polarization induced band bending for InGaN solar cell design Materials Research Society Symposium Proceedings. 1167: 3-8. DOI: 10.1557/Proc-1167-O01-04  0.589
2009 Faleev N, Jampana B, Jani O, Yu H, Opila R, Ferguson I, Honsberg C. Correlation of crystalline defects with photoluminescence of InGaN layers Applied Physics Letters. 95: 51915. DOI: 10.1063/1.3202409  0.61
2008 Yu H, Melton A, Jani O, Jampana B, Wang S, Gupta S, Buchanan J, Fenwick W, Ferguson I. MOCVD Growth of High-Hole Concentration (>2×1019 cm−3) P-Type InGaN for Solar Cell Application Mrs Proceedings. 1123. DOI: 10.1557/Proc-1123-1123-P07-02  0.48
2008 Jampana BR, Jani OK, Hongbo Y, Ferguson IT, McCandless BE, Hegedus SS, Opila RL, Honsberg CB. Nitride based Schottky-barrier photovoltaic devices Materials Research Society Symposium Proceedings. 1040: 207-212. DOI: 10.1557/Proc-1040-Q09-27  0.49
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