Conan Weiland, Ph.D. - Publications

2010 Department of Materials Science and Engineering University of Delaware, Newark, DE, United States 
Materials Science Engineering, Condensed Matter Physics, Physical Chemistry

32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Prakash A, Quackenbush NF, Yun H, Held JT, Wang T, Truttmann T, Ablett JM, Weiland C, Lee TL, Woicik JC, Mkhoyan KA, Jalan B. Separating Electrons and Donors in BaSnO via Band Engineering. Nano Letters. PMID 31702928 DOI: 10.1021/acs.nanolett.9b03825  0.76
2017 Rojas WY, Winter AD, Grote JG, Kim SS, Naik RR, Williams AD, Weiland C, Principe E, Fischer DA, Banerjee S, Prendergast D, Campo EM. Strain and bond length dynamics upon growth and transfer of graphene by NEXAFS spectroscopy from first principles and experiment. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 29286662 DOI: 10.1021/acs.langmuir.7b03260  0.36
2016 Weiland C, Rumaiz AK, Pianetta P, Woicik JC. Recent applications of hard x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4946046  0.84
2016 Weiland C, Rumaiz AK, Woicik JC. HAXPES measurements of heterojunction band alignment Springer Series in Surface Sciences. 59: 381-405. DOI: 10.1007/978-3-319-24043-5_15  0.84
2015 Woicik JC, Weiland C, Rumaiz AK. Loss for photoemission versus gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.201412  0.84
2015 Weiland C, Sterbinsky GE, Rumaiz AK, Hellberg CS, Woicik JC, Zhu S, Schlom DG. Stoichiometry dependence of potential screening at La(1-δ) Al(1+δ) O3/ SrTiO3 interfaces Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.165103  0.84
2015 Church JR, Weiland C, Opila RL. Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy Applied Physics Letters. 106. DOI: 10.1063/1.4919448  0.84
2014 Ashraf A, Dissanayake DM, Germack DS, Weiland C, Eisaman MD. Confinement-induced reduction in phase segregation and interchain disorder in bulk heterojunction films. Acs Nano. 8: 323-31. PMID 24359528 DOI: 10.1021/nn404172m  0.84
2014 Walsh LA, Hughes G, Weiland C, Woicik JC, Lee RTP, Loh WY, Lysaght P, Hobbs C. Ni-(In,Ga)As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy Physical Review Applied. 2. DOI: 10.1103/PhysRevApplied.2.064010  0.84
2014 Knorr DB, Williams KS, Baril NF, Weiland C, Andzelm JW, Lenhart JL, Woicik JC, Fischer DA, Tidrow MZ, Bandara SV, Henry NC. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials Applied Surface Science. 320: 414-428. DOI: 10.1016/j.apsusc.2014.09.055  0.84
2014 Weiland C, Krajewski J, Opila R, Pallem V, Dussarrat C, Woicik JC. Nondestructive compositional depth profiling using variable-kinetic energy hard X-ray photoelectron spectroscopy and maximum entropy regularization Surface and Interface Analysis. 46: 407-417. DOI: 10.1002/sia.5517  0.84
2013 Weiland C, Browning R, Karlin BA, Fischer DA, Woicik JC. Note: Alignment/focus dependent core-line sensitivity for quantitative chemical analysis in hard x-ray photoelectron spectroscopy using a hemispherical electron analyzer. The Review of Scientific Instruments. 84: 036106. PMID 23556858 DOI: 10.1063/1.4795406  0.84
2013 Weiland C, Rumaiz AK, Price J, Lysaght P, Woick JC. Passivation of In0.53Ga0.47As/ZrO2 interfaces by AlN atomic layer deposition process Journal of Applied Physics. 114. DOI: 10.1063/1.4815934  0.84
2013 Quackenbush NF, Allen JP, Scanlon DO, Sallis S, Hewlett JA, Nandur AS, Chen B, Smith KE, Weiland C, Fischer DA, Woicik JC, White BE, Watson GW, Piper LFJ. Origin of the bipolar doping behavior of SnO from X-ray spectroscopy and density functional theory Chemistry of Materials. 25: 3114-3123. DOI: 10.1021/cm401343a  0.84
2013 Weiland C, Rumaiz AK, Lysaght P, Karlin B, Woicik JC, Fischer D. NIST high throughput variable kinetic energy hard X-ray photoelectron spectroscopy facility Journal of Electron Spectroscopy and Related Phenomena. 190: 193-200. DOI: 10.1016/j.elspec.2013.04.008  0.84
2012 Weiland CR, Yang L, Doren DJ, Menning CA, Skliar D, Willis BG, Chen JG, Opila RL. Binding of styrene on silicon (111)-7 × 7 surfaces as a model molecular electronics system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3701712  0.84
2012 Chen YT, Huang J, Price J, Lysaght P, Veksler D, Weiland C, Woicik JC, Bersuker G, Hill R, Oh J, Kirsch PD, Jammy R, Lee JC. III-V gate stack interface improvement to enable high mobility 11nm node CMOS International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. DOI: 10.1109/VLSI-TSA.2012.6210157  0.84
2012 Rumaiz AK, Woicik JC, Weiland C, Xie Q, Siddons DP, Jaffari GH, Detavernier C. Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4768947  0.84
2012 Lysaght PS, Woicik JC, Sahiner MA, Price J, Weiland C, Kirsch PD. Spectroscopic analysis of Al and N diffusion in HfO 2 Journal of Applied Physics. 112. DOI: 10.1063/1.4754578  0.84
2012 Weiland C, Lysaght P, Price J, Huang J, Woicik JC. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In 0.53Ga 0.47As/Al 2O 3 film systems Applied Physics Letters. 101. DOI: 10.1063/1.4745207  0.84
2012 Gaowei M, Muller EM, Rumaiz AK, Weiland C, Cockayne E, Jordan-Sweet J, Smedley J, Woicik JC. Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.4718028  0.84
2012 Jampana BR, Weiland CR, Opila RL, Ferguson IT, Honsberg CB. Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire Thin Solid Films. 520: 6807-6812. DOI: 10.1016/j.tsf.2012.07.003  0.84
2011 Bremner SP, Nataraj L, Cloutier SG, Weiland C, Pancholi A, Opila R. Use of Sb spray for improved performance of InAs/GaAs quantum dots for novel photovoltaic structures Solar Energy Materials and Solar Cells. 95: 1665-1670. DOI: 10.1016/j.solmat.2011.01.026  0.84
2011 Chhabra B, Weiland C, Opila RL, Honsberg CB. Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy Physica Status Solidi (a) Applications and Materials Science. 208: 86-90. DOI: 10.1002/pssa.201026101  0.84
2010 Besancon B, Weiland C, Omarjee V, Rao VP, Dussarrat C. Comparison of HfSiOx thin films deposited by ALD with moisture using different silicon sources Ecs Transactions. 33: 171-182. DOI: 10.1149/1.3481604  0.84
2010 Wang WG, Ni C, Miao GX, Weiland C, Shah LR, Fan X, Parson P, Jordan-Sweet J, Kou XM, Zhang YP, Stearrett R, Nowak ER, Opila R, Moodera JS, Xiao JQ. Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.144406  0.84
2009 Katamreddy R, Stafford NA, Guerin L, Feist B, Dussarrat C, Pallem V, Weiland C, Opila R. Atomic layer deposition of rare-earth oxide thin films for high-κ dielectric applications Ecs Transactions. 19: 525-536. DOI: 10.1149/1.3122114  0.84
2009 Hsu IJ, McCandless BE, Weiland C, Willis BG. Characterization of ALD copper thin films on palladium seed layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 660-667. DOI: 10.1116/1.3143663  0.84
2009 Sustersic N, Nataraj L, Weiland C, Coppinger M, Shaleev MV, Novikov AV, Opila R, Cloutier SG, Kolodzey J. Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3114377  0.84
2009 Perrine KA, Leftwich TR, Weiland CR, Madachik MR, Opila RL, Teplyakov AV. Reactions of aromatic bifunctional molecules on silicon surfaces: nitrosobenzene and nitrobenzene Journal of Physical Chemistry C. 113: 6643-6653. DOI: 10.1021/jp8082826  0.84
2008 Demirkan K, Mathew A, Weiland C, Yao Y, Rawlett AM, Tour JM, Opila RL. Energy level alignment at organic semiconductor/metal interfaces: effect of polar self-assembled monolayers at the interface. The Journal of Chemical Physics. 128: 074705. PMID 18298162 DOI: 10.1063/1.2832306  0.84
2008 Demirkan K, Mathew A, Weiland C, Reid M, Opila RL. Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices Journal of Applied Physics. 103. DOI: 10.1063/1.2837883  0.84
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