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Conan Weiland, Ph.D. - Publications

Affiliations: 
2010 Department of Materials Science and Engineering University of Delaware, Newark, DE, United States 
Area:
Materials Science Engineering, Condensed Matter Physics, Physical Chemistry
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Jenkins MA, Holden KEK, Smith SW, Brumbach MT, Henry MD, Weiland C, Woicik JC, Jaszewski ST, Ihlefeld JF, Conley JF. Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy. Acs Applied Materials & Interfaces. PMID 33749229 DOI: 10.1021/acsami.0c17729  0.586
2020 Woicik JC, Weiland C, Jaye C, Fischer DA, Rumaiz AK, Shirley EL, Kas JJ, Rehr JJ. Charge-transfer satellites and chemical bonding in photoemission and x-ray absorption of SrTiO3 and rutile TiO2 : Experiment and first-principles theory with general application to spectroscopic analysis Physical Review B. 101. DOI: 10.1103/Physrevb.101.245119  0.563
2020 Woicik JC, Weiland C, Rumaiz AK, Brumbach MT, Ablett JM, Shirley EL, Kas JJ, Rehr JJ. Core hole processes in x-ray absorption and photoemission by resonant Auger-electron spectroscopy and first-principles theory Physical Review B. 101. DOI: 10.1103/Physrevb.101.245105  0.576
2019 Prakash A, Quackenbush NF, Yun H, Held JT, Wang T, Truttmann T, Ablett JM, Weiland C, Lee TL, Woicik JC, Mkhoyan KA, Jalan B. Separating Electrons and Donors in BaSnO via Band Engineering. Nano Letters. PMID 31702928 DOI: 10.1021/Acs.Nanolett.9B03825  0.563
2018 Woicik JC, Weiland C, Rumaiz AK, Brumbach M, Quackenbush NF, Ablett JM, Shirley EL. Revealing excitonic processes and chemical bonding in MoS2 by x-ray spectroscopy Physical Review B. 98. DOI: 10.1103/Physrevb.98.115149  0.576
2018 Woicik JC, Ablett JM, Quackenbush NF, Rumaiz AK, Weiland C, Droubay TC, Chambers SA. Experimental assignment of many-electron excitations in the photoionization of NiO Physical Review B. 97: 245142. DOI: 10.1103/Physrevb.97.245142  0.492
2018 Weiland C, Jaye C, Quackenbush NF, Gann E, Fu Z, Kirkland JP, Karlin BA, Ravel B, Woicik JC, Fischer DA. NIST HAXPES at NSLS and NSLS-II Synchrotron Radiation News. 31: 23-28. DOI: 10.1080/08940886.2018.1483654  0.439
2016 Weiland C, Rumaiz AK, Pianetta P, Woicik JC. Recent applications of hard x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4946046  0.657
2016 Walsh LA, Weiland C, McCoy AP, Woicik JC, Lee RTP, Lysaght P, Hughes G. Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts Journal of Applied Physics. 120: 135303. DOI: 10.1063/1.4964251  0.613
2016 Weiland C, Rumaiz AK, Woicik JC. HAXPES measurements of heterojunction band alignment Springer Series in Surface Sciences. 59: 381-405. DOI: 10.1007/978-3-319-24043-5_15  0.532
2015 Woicik JC, Weiland C, Rumaiz AK. Loss for photoemission versus gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.201412  0.545
2015 Weiland C, Sterbinsky GE, Rumaiz AK, Hellberg CS, Woicik JC, Zhu S, Schlom DG. Stoichiometry dependence of potential screening at La(1-δ) Al(1+δ) O3/ SrTiO3 interfaces Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.165103  0.575
2015 Church JR, Weiland C, Opila RL. Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy Applied Physics Letters. 106. DOI: 10.1063/1.4919448  0.639
2014 Ashraf A, Dissanayake DM, Germack DS, Weiland C, Eisaman MD. Confinement-induced reduction in phase segregation and interchain disorder in bulk heterojunction films. Acs Nano. 8: 323-31. PMID 24359528 DOI: 10.1021/Nn404172M  0.37
2014 Walsh LA, Hughes G, Weiland C, Woicik JC, Lee RTP, Loh WY, Lysaght P, Hobbs C. Ni-(In,Ga)As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy Physical Review Applied. 2. DOI: 10.1103/Physrevapplied.2.064010  0.592
2014 Knorr DB, Williams KS, Baril NF, Weiland C, Andzelm JW, Lenhart JL, Woicik JC, Fischer DA, Tidrow MZ, Bandara SV, Henry NC. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials Applied Surface Science. 320: 414-428. DOI: 10.1016/J.Apsusc.2014.09.055  0.624
2014 Weiland C, Krajewski J, Opila R, Pallem V, Dussarrat C, Woicik JC. Nondestructive compositional depth profiling using variable-kinetic energy hard X-ray photoelectron spectroscopy and maximum entropy regularization Surface and Interface Analysis. 46: 407-417. DOI: 10.1002/Sia.5517  0.69
2013 Weiland C, Browning R, Karlin BA, Fischer DA, Woicik JC. Note: Alignment/focus dependent core-line sensitivity for quantitative chemical analysis in hard x-ray photoelectron spectroscopy using a hemispherical electron analyzer. The Review of Scientific Instruments. 84: 036106. PMID 23556858 DOI: 10.1063/1.4795406  0.557
2013 Weiland C, Rumaiz AK, Price J, Lysaght P, Woick JC. Passivation of In0.53Ga0.47As/ZrO2 interfaces by AlN atomic layer deposition process Journal of Applied Physics. 114. DOI: 10.1063/1.4815934  0.396
2013 Quackenbush NF, Allen JP, Scanlon DO, Sallis S, Hewlett JA, Nandur AS, Chen B, Smith KE, Weiland C, Fischer DA, Woicik JC, White BE, Watson GW, Piper LFJ. Origin of the bipolar doping behavior of SnO from X-ray spectroscopy and density functional theory Chemistry of Materials. 25: 3114-3123. DOI: 10.1021/Cm401343A  0.603
2013 Weiland C, Rumaiz AK, Lysaght P, Karlin B, Woicik JC, Fischer D. NIST high throughput variable kinetic energy hard X-ray photoelectron spectroscopy facility Journal of Electron Spectroscopy and Related Phenomena. 190: 193-200. DOI: 10.1016/J.Elspec.2013.04.008  0.599
2012 Weiland CR, Yang L, Doren DJ, Menning CA, Skliar D, Willis BG, Chen JG, Opila RL. Binding of styrene on silicon (111)-7 × 7 surfaces as a model molecular electronics system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3701712  0.541
2012 Chen YT, Huang J, Price J, Lysaght P, Veksler D, Weiland C, Woicik JC, Bersuker G, Hill R, Oh J, Kirsch PD, Jammy R, Lee JC. III-V gate stack interface improvement to enable high mobility 11nm node CMOS International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. DOI: 10.1109/VLSI-TSA.2012.6210157  0.485
2012 Rumaiz AK, Woicik JC, Weiland C, Xie Q, Siddons DP, Jaffari GH, Detavernier C. Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4768947  0.611
2012 Lysaght PS, Woicik JC, Sahiner MA, Price J, Weiland C, Kirsch PD. Spectroscopic analysis of Al and N diffusion in HfO 2 Journal of Applied Physics. 112. DOI: 10.1063/1.4754578  0.604
2012 Weiland C, Lysaght P, Price J, Huang J, Woicik JC. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In 0.53Ga 0.47As/Al 2O 3 film systems Applied Physics Letters. 101. DOI: 10.1063/1.4745207  0.561
2012 Gaowei M, Muller EM, Rumaiz AK, Weiland C, Cockayne E, Jordan-Sweet J, Smedley J, Woicik JC. Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.4718028  0.618
2012 Jampana BR, Weiland CR, Opila RL, Ferguson IT, Honsberg CB. Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire Thin Solid Films. 520: 6807-6812. DOI: 10.1016/J.Tsf.2012.07.003  0.733
2011 Bremner SP, Nataraj L, Cloutier SG, Weiland C, Pancholi A, Opila R. Use of Sb spray for improved performance of InAs/GaAs quantum dots for novel photovoltaic structures Solar Energy Materials and Solar Cells. 95: 1665-1670. DOI: 10.1016/J.Solmat.2011.01.026  0.576
2011 Chhabra B, Weiland C, Opila RL, Honsberg CB. Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy Physica Status Solidi (a) Applications and Materials Science. 208: 86-90. DOI: 10.1002/Pssa.201026101  0.721
2010 Wang WG, Ni C, Miao GX, Weiland C, Shah LR, Fan X, Parson P, Jordan-Sweet J, Kou XM, Zhang YP, Stearrett R, Nowak ER, Opila R, Moodera JS, Xiao JQ. Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.144406  0.547
2009 Hsu IJ, McCandless BE, Weiland C, Willis BG. Characterization of ALD copper thin films on palladium seed layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 660-667. DOI: 10.1116/1.3143663  0.37
2009 Sustersic N, Nataraj L, Weiland C, Coppinger M, Shaleev MV, Novikov AV, Opila R, Cloutier SG, Kolodzey J. Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3114377  0.554
2009 Perrine KA, Leftwich TR, Weiland CR, Madachik MR, Opila RL, Teplyakov AV. Reactions of aromatic bifunctional molecules on silicon surfaces: nitrosobenzene and nitrobenzene Journal of Physical Chemistry C. 113: 6643-6653. DOI: 10.1021/Jp8082826  0.54
2008 Demirkan K, Mathew A, Weiland C, Yao Y, Rawlett AM, Tour JM, Opila RL. Energy level alignment at organic semiconductor/metal interfaces: effect of polar self-assembled monolayers at the interface. The Journal of Chemical Physics. 128: 074705. PMID 18298162 DOI: 10.1063/1.2832306  0.746
2008 Demirkan K, Mathew A, Weiland C, Reid M, Opila RL. Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices Journal of Applied Physics. 103. DOI: 10.1063/1.2837883  0.748
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