James Kolodzey - Publications

Affiliations: 
Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering

164 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Hart J, Adam T, Kim Y, Huang YC, Reznicek A, Hazbun R, Gupta J, Kolodzey J. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11% Journal of Applied Physics. 119. DOI: 10.1063/1.4942851  1
2016 Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Thin Solid Films. 604: 23-27. DOI: 10.1016/j.tsf.2016.03.010  1
2016 Hazbun R, Hart J, Hickey R, Ghosh A, Fernando N, Zollner S, Adam TN, Kolodzey J. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition Journal of Crystal Growth. 444: 21-27. DOI: 10.1016/j.jcrysgro.2016.03.018  1
2016 Zhang D, Liao Y, Li J, Wen T, Jin L, Wang X, Kolodzey J. Effect of in-situ annealing on the structural and optical properties of GeSn films grown by MBE Journal of Alloys and Compounds. 684: 643-648. DOI: 10.1016/j.jallcom.2016.05.238  1
2016 Zhang D, Jin L, Li J, Wen T, Liu C, Xu F, Kolodzey J, Liao Y. MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties Journal of Alloys and Compounds. 665: 131-136. DOI: 10.1016/j.jallcom.2016.01.038  1
2016 Zhang D, Sun D, Wen Q, Wen T, Kolodzey J, Zhang H. Tuning the optical modulation of wideband terahertz waves by the gate voltage of graphene field effect transistors Composites Part B: Engineering. 89: 54-59. DOI: 10.1016/j.compositesb.2015.10.049  1
2015 Zhang D, Ji L, Kolodzey J. Integration of microwave termination based on TaN thin films on ferrite substrates Epj Applied Physics. 72. DOI: 10.1051/epjap/2015140497  1
2015 Hazbun R, Bhargava N, Rodriguez-Toro VA, Goossen K, Kolodzey J, Ram-Mohan LR, Aina L, Fathimulla A, Hier H. Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates Infrared Physics and Technology. 69: 211-217. DOI: 10.1016/j.infrared.2015.01.023  1
2014 Kim S, Bhargava N, Gupta J, Coppinger M, Kolodzey J. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy. Optics Express. 22: 11029-34. PMID 24921801 DOI: 10.1364/OE.22.011029  1
2014 Hart J, Hazbun R, Nakos J, Siegel D, Funch C, Kolodzey J, Harame D. Morphological instability of high ge percent SiGe films grown by ultra-high vacuum chemical vapor deposition Ecs Transactions. 64: 659-667. DOI: 10.1149/06406.0659ecst  1
2014 Hazbun R, Hart J, Nakos J, Siegel D, Funch C, Kaushal V, Hazel S, Kolodzey J. The use of dopants for defect monitoring for silicon-germanium ultra-high vacuum chemical vapor deposition Ecs Transactions. 64: 441-454. DOI: 10.1149/06406.0441ecst  1
2014 Fan X, Chen Y, Bi C, Xie Y, Kolodzey J, Wilson JD, Simons RN, Zhang H, Xiao JQ. Magnetic tunnel junction-based on-chip microwave phase and spectrum analyzer Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848560  1
2014 Bhargava N, Gupta JP, Adam T, Kolodzey J. Structural properties of boron-doped germanium-Tin alloys grown by molecular beam epitaxy Journal of Electronic Materials. 43: 931-937. DOI: 10.1007/s11664-014-3088-3  1
2014 Kolodzey J. High power, high temperature terahertz emitters based on electronic processes in semiconductors International Conference On Fibre Optics and Photonics, 2014 1
2013 Kolodzey J, Gupta JP. Terahertz emitters based on intracenter transitions in semiconductors Proceedings of Spie - the International Society For Optical Engineering. 8846. DOI: 10.1117/12.2024447  1
2013 Kim S, Gupta J, Bhargava N, Coppinger M, Kolodzey J. Current-voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 34: 1217-1219. DOI: 10.1109/LED.2013.2278371  1
2013 Gupta JP, Andrainov AV, Kolodzey J, Sankin VI, Zakhar'in AO, Vasil'ev YB. Injection induced terahertz electroluminescence from 4H-SiC p-n-junctions under forward bias International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2013.6665788  1
2013 Andrianov AV, Gupta JP, Kolodzey J, Sankin VI, Zakhar'In AO, Vasilyev YB. Current injection induced terahertz emission from 4H-SiC p-n junctions Applied Physics Letters. 103. DOI: 10.1063/1.4832824  1
2013 Bhargava N, Coppinger M, Prakash Gupta J, Wielunski L, Kolodzey J. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4816660  1
2013 Gupta JP, Bhargava N, Kim S, Adam T, Kolodzey J. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4812747  1
2013 Coppinger M, Hart J, Bhargava N, Kim S, Kolodzey J. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4800448  1
2013 Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography Journal of Crystal Growth. 365: 44-53. DOI: 10.1016/j.jcrysgro.2012.12.002  1
2013 Faleev N, Sustersic N, Bhargava N, Kolodzey J, Magonov S, Smith DJ, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy Journal of Crystal Growth. 365: 35-43. DOI: 10.1016/j.jcrysgro.2012.11.067  1
2011 Coppinger M, Sustersic NA, Kolodzey J, Allik TH. Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging Optical Engineering. 50. DOI: 10.1117/1.3574066  1
2011 Kolodzey J, Coppinger M, Kim S, Bhargava N, Gupta J, Ni C, Yeo YK. The properties of germanium-tin alloys for infrared device applications 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135273  1
2011 Liu W, Sanwlani S, Hazbun R, Kolodzey J, Bracker AS, Gammon D, Doty MF. In situ tunable g factor for a single electron confined inside an InAs quantum dot Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.121304  1
2011 Antonova IV, Vinokurov PV, Smagulova SA, Kagan MS, Ray SK, Kolodzey J. Resonant tunneling in Si/SiGe/Si structures with a single quantum well under surface passivation Journal of Applied Physics. 110. DOI: 10.1063/1.3671058  1
2011 Shah LR, Bhargava N, Kim S, Stearrett R, Kou X, Sun X, Sun S, Kolodzey J, Nowak ER, Xiao JQ. Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness Journal of Applied Physics. 109. DOI: 10.1063/1.3563096  1
2010 Fan X, Kim S, Kou X, Kolodzey J, Zhang H, Xiao JQ. Microwave phase detection with a magnetic tunnel junction Applied Physics Letters. 97. DOI: 10.1063/1.3511328  1
2010 Nataraj L, Sustersic N, Coppinger M, Gerlein LF, Kolodzey J, Cloutier SG. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3371759  1
2010 Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Structural and optical characterization of Germanium-rich islands on silicon grown by Molecular Beam Epitaxy Optics Infobase Conference Papers 1
2009 Antonova IV, Neustroev EP, Smagulova SA, Kagan MS, Alekseev PS, Ray SK, Sustersic N, Kolodzey J. Confinement levels in passivated SiGe/Si quantum well structures Solid State Phenomena. 156: 541-546. DOI: 10.4028/www.scientific.net/SSP.156-158.541  1
2009 Cao R, Moriyama T, Wang WG, Fan X, Kolodzey J, Chen SH, Chang CR, Tserkovnyak Y, Nikolic BK, Xiao JQ. Spin-polarized transport and dynamics in magnetic tunneling structures Ieee Transactions On Magnetics. 45: 3434-3440. DOI: 10.1109/TMAG.2009.2024126  1
2009 Faleev N, Sustersic N, Bhargava N, Coppinger M, Kolodzey J. SiGe lattice-mismatched epitaxial heterostructures: Types and density of crystalline defects related to epitaxial growth conditions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378083  1
2009 Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy Ieee International Conference On Group Iv Photonics Gfp. 190-192. DOI: 10.1109/GROUP4.2009.5338321  1
2009 Antonova IV, Neustroev EP, Smagulova SA, Kagan MS, Alekseev PS, Ray SK, Sustersic N, Kolodzey J. Deep-level spectroscopy studies of confinement levels in SiGe quantum wells Journal of Applied Physics. 106. DOI: 10.1063/1.3153974  1
2009 Sustersic N, Nataraj L, Weiland C, Coppinger M, Shaleev MV, Novikov AV, Opila R, Cloutier SG, Kolodzey J. Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3114377  1
2009 Aina L, Hier H, Fathimulla A, Lecates M, Kolodzey J, Goossen K, Coppinger M, Bhargava N. High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications Infrared Physics and Technology. 52: 310-316. DOI: 10.1016/j.infrared.2009.05.011  1
2009 Kagan M, Antonova I, Neustroev E, Smagulova S, Alekseev P, Ray S, Sustersic N, Kolodzey J. Confinement levels in SiGe quantum wells studied by charge spectroscopy Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 2707-2709. DOI: 10.1002/pssc.200982542  1
2009 Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Optoelectronic properties of Germanium islands formed on silicon using Stranski-Krastanov growth by MBE Optics Infobase Conference Papers 1
2008 Moriyama T, Cao R, Fan X, Xuan G, Nikoli? BK, Tserkovnyak Y, Kolodzey J, Xiao JQ. Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer. Physical Review Letters. 100: 067602. PMID 18352517 DOI: 10.1103/PhysRevLett.100.067602  1
2008 Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E. Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388. DOI: 10.1116/1.2891245  1
2008 Xuan G, Lv PC, Zhang X, Kolodzey J, Desalvo G, Powell A. Silicon carbide terahertz emitting devices Journal of Electronic Materials. 37: 726-729. DOI: 10.1007/s11664-007-0371-6  1
2007 Xuan G, Ghosh S, Kim S, Lv PC, Buma T, Weng B, Bamer K, Kolodzey J. Terahertz sensing of materials International Journal of High Speed Electronics and Systems. 17: 121-126. DOI: 10.1142/S0129156407004333  1
2007 Sustersic N, Kim S, Lv PC, Coppinger M, Troeger T, Kolodzey J. Terahertz emission from electrically pumped silicon germanium evtersubband devices International Journal of High Speed Electronics and Systems. 17: 115-120. DOI: 10.1142/S0129156407004321  1
2007 Adam TN, Kim S, Lv PC, Xuan G, Ray SK, Troeger RT, Prather D, Kolodzey J. Cyclic deep reactive ion etching with mask replenishment Journal of Micromechanics and Microengineering. 17: 1773-1780. DOI: 10.1088/0960-1317/17/9/004  1
2007 Sturm J, Fitzgerald E, Koester S, Kolodzey J, Muroto J, Paul D, Tillack B, Zaima S, Ghyselen B, Takagi S. Papers from the 3rd international SiGe technology and device meeting (Princeton, New Jersey, USA, 15-17 May 2006) (ISTDM 2006) Semiconductor Science and Technology. 22. DOI: 10.1088/0268-1242/22/1/E01  1
2007 Antonova IV, Soots RA, Guliaev MB, Prinz VY, Kagan MS, Kolodzey J. Electrical passivation of SiSiGeSi structures by 1-octadecene monolayers Applied Physics Letters. 91. DOI: 10.1063/1.2775083  1
2007 Xuan G, Kim S, Coppinger M, Sustersic N, Kolodzey J, Lv PC. Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices Applied Physics Letters. 91. DOI: 10.1063/1.2768195  1
2007 Kagan MS, Altukhov IV, Sinis VP, Paprotskly SK, Yassievich IN, Kolodzey J. Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures Physica Status Solidi (B) Basic Research. 244: 192-196. DOI: 10.1002/pssb.200672548  1
2007 Kagan MS, Altukhov IV, Paprotskiy SK, Sinis VP, Yassievich IN, Kolodzey J. Transient characteristics of SiGe/Si QW structures at THz lasing International Journal of Nanoscience. 6: 279-282.  1
2006 Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Paprotskiy SK, Yassievich IN, Odnoblyudov MA, Prokofiev AA, Kolodzey J. Stimulated THz emission of strained p-Ge and SiGe/Si quantum-well structures doped with shallow acceptors Ecs Transactions. 3: 745-757. DOI: 10.1149/1.2355869  1
2006 Antonova IV, Bak-Misiuk J, Romanowski P, Skuratov VA, Zaumseil P, Sustersic N, Kolodzey J. Vacancy - Assisted redistribution of Ge in SiGe/Si multilayer structures irradiated with high energy ions Ecs Transactions. 3: 145-153. DOI: 10.1149/1.2355803  1
2006 Weng B, Xuan G, Kolodzey J, Barner KE. Empirical mode decomposition as a tool for DNA sequence analysis from terahertz spectroscopy measurements 2006 Ieee International Workshop On Genomic Signal Processing and Statistics, Gensips 2006. 63-64. DOI: 10.1109/GENSIPS.2006.353157  1
2006 Sturm J, Fitzgerald E, Koester S, Kolodzey J. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest: Welcome Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006.  1
2006 Binwei W, Guangchi X, Kolodzey J, Barner KE. Discriminating DNA sequences from terahertz spectroscopy - A wavelet domain analysis Bioengineering, Proceedings of the Northeast Conference. 2006: 211-212.  1
2006 Guangchi X, Adam TN, Suehle J, Fitzgerald E, Lv P, Sustersic N, Coppinger MJ, Kolodzey J. Xenon Difluoride dry etching of Si, SiGe alloy and Ge Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006.  1
2005 Antonova IV, Obodnikov VI, Kagan MS, Troeger RT, Ray SK, Kolodzey J. Capacitance study of selectively doped SiGe/Si heterostructures Semiconductor Science and Technology. 20: 335-339. DOI: 10.1088/0268-1242/20/5/001  1
2005 Lv PC, Zhang X, Kolodzey J, Powell A. Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142294  1
2005 Lv PC, Zhang X, Kolodzey J, Odnoblyudov MA, Yassievich IN. The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices Journal of Applied Physics. 98. DOI: 10.1063/1.2132516  1
2005 Lv PC, Troeger RT, Zhang X, Adam TN, Kolodzey J, Odnoblyudov MA, Yassievich IN. Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters Journal of Applied Physics. 98. DOI: 10.1063/1.2128045  1
2005 Xuan G, Kolodzey J, Kapoor V, Gonye G. Characteristics of field-effect devices with gate oxide modification by DNA Applied Physics Letters. 87. DOI: 10.1063/1.2041826  1
2005 Antonova IV, Kagan MS, Polyakov VI, Golik LL, Kolodzey J. Effect of interface states on population of quantum wells in SiGe/Si structures Physica Status Solidi C: Conferences. 2: 1924-1928. DOI: 10.1002/pssc.200460526  1
2005 Lv P, Kolodzey J, Thomas RT, Kim S, Ray SK. The emission of Terahertz radiation from doped silicon devices Materials Research Society Symposium Proceedings. 832: 81-89.  1
2005 Antonova IV, Golik LL, Kagan MS, Polyakov VI, Rukavischnikov AI, Rossukanyi NM, Kolodzey J. Quantum well related conductivity and deep traps in SiGe/Si structures Solid State Phenomena. 108: 489-494.  1
2004 Kolodzey J, Adam TN, Troeger RT, Lv PC, Ray SK, Yassievich I, Odnoblyudov M, Kagan M. Terahertz emitters and detectors based on SiGe nanostructures International Journal of Nanoscience. 3: 171-176. DOI: 10.1142/S0219581X0400195X  1
2004 Xuan G, Kolodzey J, Kapoor V, Gonye G. Electrical effects of DNA molecules on silicon field effect transistor International Journal of High Speed Electronics and Systems. 14: 684-689. DOI: 10.1142/S0129156404002673  1
2004 Troeger RT, Adam TN, Ray SK, Lv PC, Kim S, Kolodzey J. Temperature dependence of terahertz emission from silicon devices doped with boron International Journal of High Speed Electronics and Systems. 14: 670-675. DOI: 10.1142/S012915640400265X  1
2004 Lv PC, Troeger RT, Kim S, Ray SK, Goossen KW, Kolodzey J, Yassievich IN, Odnoblyudov MA, Kagan MS. Terahertz emission from electrically pumped gallium doped silicon devices Applied Physics Letters. 85: 3660-3662. DOI: 10.1063/1.1808878  1
2004 Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741  1
2004 Lv PC, Troeger RT, Adam TN, Kim S, Kolodzey J, Yassievich IN, Odnoblyudov MA, Kagan MS. Electroluminescence at 7 terahertz from phosphorus donors in silicon Applied Physics Letters. 85: 22-24. DOI: 10.1063/1.1769589  1
2004 Ray SK, Adam TN, Troeger RT, Kolodzey J, Looney G, Rosen A. Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si 1-xGe x films Journal of Applied Physics. 95: 5301-5304. DOI: 10.1063/1.1690487  1
2004 Kolodzey J, Lv P, Troeger RT, Kim S. Terahertz emitting devices based on dopant transitions in silicon 2004 1st Ieee International Conference On Group Iv Photonics. 37-39.  1
2004 Troeger RT, Adam TN, Ray SK, Lv P, Kim S, Xuan G, Ghosh S, Kolodzey J. Terahertz-emitting devices based on boron-doped silicon Ieee Mtt-S International Microwave Symposium Digest. 1: 361-364.  1
2003 Kagan MS, Altukhov IV, Chirkova EG, Korolev KA, Sinis VP, Troeger RT, Ray SK, Kolodzey J. Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures Proceedings of Spie - the International Society For Optical Engineering. 5023: 401-404. DOI: 10.1117/12.514394  1
2003 Adam TN, Troeger RT, Ray SK, Lehmann U, Kolodzey J. Terahertz emitting devices based on intersubband transitions in SiGe quantum wells Proceedings of Spie - the International Society For Optical Engineering. 5023: 398-400. DOI: 10.1117/12.514391  1
2003 Venkataraman S, Murakowski J, Adam TN, Kolodzey J, Prather DW. Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates Journal of Microlithography, Microfabrication and Microsystems. 2: 248-254. DOI: 10.1117/1.1610477  1
2003 Shi S, Prather DW, Yang L, Kolodzey J. Influence of support structure on microdisk resonator performance Optical Engineering. 42: 383-387. DOI: 10.1117/1.1534597  1
2003 Kolodzey J, Adam TN, Troeger RT, Lv PC, Ray SK, Looney G, Rosen A, Kagan MS, Yassievich IN. The design and operation of TeraHertz sources based on silicon germanium alloys 2003 Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems - Digest of Papers. 1-5. DOI: 10.1109/SMIC.2003.1196654  1
2003 Adam TN, Troeger RT, Ray SK, Lv PC, Kolodzey J. Terahertz electroluminescence from boron-doped silicon devices Applied Physics Letters. 83: 1713-1715. DOI: 10.1063/1.1605263  1
2003 Altukhov IV, Chirkova EG, Sinis VP, Kagan MS, Troeger RT, Ray SK, Kolodzey J, Prokofiev AA, Odnoblyudov MA, Yassievich IN. Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures Physica B: Condensed Matter. 340: 831-834. DOI: 10.1016/j.physb.2003.09.219  1
2003 Kagan MS, Altukhov IV, Chirkova EG, Sinis VP, Troeger RT, Ray SK, Kolodzey J. THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures Physica Status Solidi (B) Basic Research. 235: 293-296. DOI: 10.1002/pssb.200301571  1
2003 Kagan MS, Altukhov IV, Chirkova EG, Sinis VP, Troeger RT, Ray SK, Kolodzey J. THz lasing of SiGe/Si quantum-well structures due to shallow acceptors Physica Status Solidi Conferences. 135-138. DOI: 10.1002/pssb.200301536  1
2003 Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Yassievich IN, Kolodzey J. Terahertz stimulated emission from strained p-Ge and SiGe/Si structures Journal of Communications Technology and Electronics. 48: 1047-1054.  1
2002 Dashiell MW, Kolodzey J, Crozat P, Aniel F, Lourtioz JM. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 23: 357-359. DOI: 10.1109/LED.2002.1004234  1
2002 Hattab A, Aboelfotoh MO, Tremblay G, Meyer F, Kolodzey J, Osten HJ, Dubois C. Diffusion and electrical activity of copper in Si1-x-yGexCy alloys Microelectronic Engineering. 60: 283-288. DOI: 10.1016/S0167-9317(01)00605-0  1
2002 Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326.  1
2002 Ray SK, Adam TN, Kar GS, Swann CP, Kolodzey J. Low thermal budget NiSi films on SiGe alloys Materials Research Society Symposium - Proceedings. 745: 247-252.  1
2002 Troeger RT, Adam TN, Ray SK, Lv P, Lehmann U, Kolodzey J. Terahertz-emitting silicon-germanium devices Materials Research Society Symposium - Proceedings. 744: 43-48.  1
2002 Adam TN, Shi S, Ray SK, Troeger RT, Prather D, Kolodzey J. The Design and Fabrication of Microdisk Resonators for Terahertz Frequency Operation Proceedings Ieee Lester Eastman Conference On High Performance Devices. 402-408.  1
2002 Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264.  1
2002 Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206.  1
2002 Katulka G, Roe KJ, Kolodzey J, Swann CP, Desalvo G, Clarke RC, Eldridge G, Messham R. A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation Journal of Electronic Materials. 31: 346-350.  1
2001 Chen F, Kolodzey J. Current transport mechanisms of Ge1-yCy/Si heterojunction diodes 2001 6th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2001 - Proceedings. 1: 592-595. DOI: 10.1109/ICSICT.2001.981548  1
2001 Roe KJ, Katulka G, Kolodzey J, Saddow SE, Jacobson D. Silicon carbide and silicon carbide:Germanium heterostructure bipolar transistors Applied Physics Letters. 78: 2073-2075. DOI: 10.1063/1.1358851  1
2001 Roe KJ, Kolodzey J, Swann CP, Tsao MW, Rabolt JF, Chen J, Brandes GR. The electrical and optical properties of thin film diamond implanted with silicon Applied Surface Science. 175: 468-473. DOI: 10.1016/S0169-4332(01)00120-9  1
2001 Katulka G, Roe K, Kolodzey J, Eldridge G, Clarke RC, Swann CP, Wilson RG. The electrical characteristics of silicon carbide alloyed with germanium Applied Surface Science. 175: 505-511. DOI: 10.1016/S0169-4332(01)00111-8  1
2001 Adam T, Kolodzey J, Swann CP, Tsao MW, Rabolt JF. The electrical properties of MIS capacitors with ALN gate dielectrics Applied Surface Science. 175: 428-435. DOI: 10.1016/S0169-4332(01)00091-5  1
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2826-2834. DOI: 10.1116/1.1319691  1
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  1
2000 Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM. Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1728-1731.  1
2000 Kolodzey J, Chowdhury EA, Adam TN, Qui G, Rau I, Olowolafe JO, Suehle JS, Chen Y. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon Ieee Transactions On Electron Devices. 47: 121128.  1
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. The mechanical properties of common interlevel dielectric films and their influences on aluminum interconnect extrusions Materials Research Society Symposium - Proceedings. 594: 421-426.  1
1999 Shao X, Jonczyk R, Dashiell M, Hits D, Orner BA, Khan AS, Roe K, Kolodzey J, Berger PR, Kaba M, Barteau MA, Unruh KM. Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots Journal of Applied Physics. 85: 578-582. DOI: 10.1063/1.369492  1
1999 Duschl R, Schmidt OG, Winter W, Eberl K, Dashiell MW, Kolodzey J, Jin-Phillipp NY, Phillipp F. Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001) Applied Physics Letters. 74: 1150-1152. DOI: 10.1063/1.123470  1
1999 Guedj C, Kolodzey J. Substitutional Ge in 3C-SiC Applied Physics Letters. 74: 691-693.  1
1999 Katulka GL, Kolodzey J, Olowolafe J. Analysis of high-temperature materials for application to electric weapon technology Ieee Transactions On Magnetics. 35: 356-360.  1
1999 Guedj C, Kolodzey J, Hairie A. Structure and lattice dynamics of Ge1-yCy, alloys using anharmonic Keating modeling Physical Review B - Condensed Matter and Materials Physics. 60: 15150-15153.  1
1999 Kulik LV, Guedj C, Dashiell MW, Kolodzey J, Hairie A. Phonon spectra of substitutional carbon in Si1-xGex alloys Physical Review B - Condensed Matter and Materials Physics. 59: 15753-15759.  1
1999 Katulka G, Guedj C, Kolodzey J, Wilson RG, Swann C, Tsao MW, Rabolt J. Electrical and optical properties of Ge-implanted 4H-SiC Applied Physics Letters. 74: 540-542.  1
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J. MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures Proceedings of Spie - the International Society For Optical Engineering. 3278: 270-277. DOI: 10.1117/12.298210  1
1998 Piprek J, Tröger T, Schröter B, Kolodzey J, Ih CS. Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors Ieee Photonics Technology Letters. 10: 81-83. DOI: 10.1109/68.651113  1
1998 Kolodzey J, Gauthier-Lafaye O, Sauvage S, Perrossier JL, Boucaud P, Julien FH, Lourtioz JM, Chen F, Orner BA, Roe K, Guedj C, Wilson RG, Spear J. The effects of composition and doping on the response of GeC-Si photodiodes Ieee Journal On Selected Topics in Quantum Electronics. 4: 964-968. DOI: 10.1109/2944.736085  1
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  1
1998 Kulik LV, Hits DA, Dashiell MW, Kolodzey J. The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures Applied Physics Letters. 72: 1972-1974. DOI: 10.1063/1.121238  1
1998 Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207  1
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J, Watson G. Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source Applied Physics Letters. 72: 833-835. DOI: 10.1063/1.120908  1
1998 Guedj C, Dashiell MW, Kulik L, Kolodzey J, Hairie A. Precipitation of β-SiC in Si1-yCY alloys Journal of Applied Physics. 84: 4631-4633.  1
1998 Jonczyk R, Hits DA, Kulik LV, Kolodzey J, Kaba M, Barteau MA. Size distribution of SiGeC quantum dots grown on Si(311) and Si(001) surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1142-1144.  1
1998 Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50.  1
1998 Junge KE, Voss NR, Lange R, Dolan JM, Zollner S, Dashiell M, Hits DA, Orner BA, Jonczyk R, Kolodzey J. Optical properties and band structure of Ge1-yCy and Ge-rich Si1-x-yGexCy alloys Thin Solid Films. 313: 172-176.  1
1998 Chowdhury EA, Dashiell M, Qiu G, Olowolafe JO, Jonczyk R, Smith D, Barnett A, Kolodzey J, Unruh KM, Swann CP, Suehle J, Chen Y. Structural, optical and electronic properties of oxidized AIN thin films at different temperatures Journal of Electronic Materials. 27: 918-922.  1
1997 Shao X, Rommel SL, Orner BA, Kolodzey J, Berger PR. A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy Ieee Electron Device Letters. 18: 411-413. DOI: 10.1109/55.622513  1
1997 Shao X, Rommel SL, Orner BA, Berger PR, Kolodzey J, Unruh KM. Low resistance ohmic contacts to p-Ge1-xCx on Si Ieee Electron Device Letters. 18: 7-9. DOI: 10.1109/55.553059  1
1997 Orner BA, Kolodzey J. Si1-x-yGexCy alloy band structures by linear combination of atomic orbitals Journal of Applied Physics. 81: 6773-6780.  1
1997 Kolodzey J, Chen F, Orner BA, Guerin D, Ismat Shah S. Energy band offsets of sigec heterojunctions Thin Solid Films. 302: 201-203.  1
1997 Chen F, Tröger RT, Roe K, Dashell MD, Jonczyk R, Holmes DS, Wilson RG, Kolodzey J. Electrical properties of Si1-x-yGexCy and Ge1-yCy alloys Journal of Electronic Materials. 26: 1371-1375.  1
1997 Kolodzey J, Chowdhury EA, Qui G, Olowolafe J, Swann CP, Unruh KM, Suehle J, Wilson RG, Zavada JM. The effects of oxidation temperature on the capacitance-voltage characteristics of oxidized AIN films on Si Applied Physics Letters. 71: 3802-3804.  1
1997 Chowdhury EA, Kolodzey J, Olowolafe JO, Qiu G, Katulka G, Hits D, Dashiell M, Van Der Weide D, Swann CP, Unruh KM. Thermally oxidized AIN thin films for device insulators Applied Physics Letters. 70: 2732-2734.  1
1996 Chen F, Orner BA, Guerin D, Khan A, Berger PR, Shah SI, Kolodzey J. Current transport characteristics of SiGeC/Si heterojunction diode Ieee Electron Device Letters. 17: 589-591. DOI: 10.1109/55.545780  1
1996 Chen F, Waite MM, Shah SI, Orner BA, Iyer SS, Kolodzey J. Measurements of the energy band offsets of Si1-xGex/Si and Ge1-yCy/Ge heterojunctions Applied Surface Science. 104: 615-620. DOI: 10.1016/S0169-4332(96)00211-5  1
1996 Orner BA, Olowolafe J, Roe K, Kolodzey J, Laursen T, Mayer JW, Spear J. Band gap of Ge rich Si1-x-yGexCy alloys Applied Physics Letters. 69: 2557-2559.  1
1996 Orner BA, Hits D, Kolodzey J, Guarin FJ, Powell AR, Iyer SS. Optical absorption in alloys of Si, Ge, C, and Sn Journal of Applied Physics. 79: 8656-8659.  1
1996 Junge KE, Lange R, Dolan JM, Zollner S, Dashiell M, Orner BA, Kolodzey J. Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si Applied Physics Letters. 69: 4084-4086.  1
1996 Orner BA, Khan A, Hits D, Chen F, Roe K, Pickett J, Shao X, Wilson RG, Berger PR, Kolodzey J. Optical properties of Ge1-yCy alloys Journal of Electronic Materials. 25: 297-300.  1
1995 Kolodzey J, O'Neil PA, Zhang S, Orner BA, Roe K, Unruh KM, Swann CP, Waite MM, Shah SI. Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy Applied Physics Letters. 67: 1865. DOI: 10.1063/1.114358  1
1995 Kolodzey J, Berger PR, Orner BA, Hits D, Chen F, Khan A, Shao X, Waite MM, Shah SI, Swann CP, Unruh KM. Optical and electronic properties of SiGeC alloys grown on Si substrates Journal of Crystal Growth. 157: 386-391. DOI: 10.1016/0022-0248(95)00329-0  1
1992 Kolodzey J, Hanesch P, Fischer T, Schwarz R, Zorn G, Göbel H. Interdiffusion in amorphous Si/SiC multilayers Materials Science and Engineering B. 11: 43-46. DOI: 10.1016/0921-5107(92)90187-E  1
1991 Wang F, Muschik T, Fischer T, Bollu M, Kolodzey J, Schwarz R. Asymmetric degradation of electron and hole μτ-products in a-Si:H/a-SiC:H multilayers under illumination Journal of Non-Crystalline Solids. 137: 1143-1146. DOI: 10.1016/S0022-3093(05)80325-4  1
1991 Schwarz R, Fischer T, Hanesch P, Muschik T, Kolodzey J, Cerva H, Meyerheim HL, Scherzer BMU. Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers Applied Surface Science. 50: 456-461. DOI: 10.1016/0169-4332(91)90217-8  1
1989 Ketterson AA, Aina OA, Laskar J, Hier H, Brock TL, Adesida I, Kolodzey J. DC and RF Characterization of Short-Gate-Length InGaAs/InAlAs MODFET's Ieee Transactions On Electron Devices. 36: 2361-2363. DOI: 10.1109/16.40922  0.52
1989 Adesida I, Ketterson AA, Brock TL, Laskar J, Kolodzey J, Aina O, Hier H. Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS Microelectronic Engineering. 9: 345-348. DOI: 10.1016/0167-9317(89)90075-0  0.52
1989 Ketterson AA, Laskar J, Brock TL, Adesida I, Kolodzey J, Aina OA, Hier H. Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs Electronics Letters. 25: 440-442.  0.52
1988 Kolodzey J, Schwarz R, Aljishi S, Chu V, Shen DS, Fauchet PM, Wagner S. Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap Applied Physics Letters. 52: 477-479. DOI: 10.1063/1.99449  1
1987 Smith ZE, Chu V, Shepard K, Aljishi S, Slobodin D, Kolodzey J, Wagner S, Chu TL. Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films Applied Physics Letters. 50: 1521-1523. DOI: 10.1063/1.97819  1
1987 Schwarz R, Kolodzey JS, Wagner S, Kouzes RT. Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films Applied Physics Letters. 50: 188-190. DOI: 10.1063/1.97657  1
1987 Aljishi S, Chu V, Smith ZE, Shen DS, Conde JP, Slobodin D, Kolodzey J. Steady state and transient transport in a-Si, Ge : H, F alloys Journal of Non-Crystalline Solids. 97: 1023-1026. DOI: 10.1016/0022-3093(87)90246-8  1
1987 Shen DS, Conde JP, Aljishi S, Smith ZE, Chu V, Kolodzey J, Wagner S. ELECTRON COLLECTION EFFICIENCY OF A-SI,GE:H,F AT 300K TO 400K Conference Record of the Ieee Photovoltaic Specialists Conference. 884-888.  1
1987 Conde JP, Chu V, Aljishi S, Shen DS, Smith ZE, Kolodzey J, Wagner S. A-SI:H,F/A-SI,GE:H,F SUPERLATTICES AS LOW BANDGAP ABSORBERS FOR SOLAR CELLS Conference Record of the Ieee Photovoltaic Specialists Conference. 1107-1110.  1
1987 Chu V, Aljishi S, Conde JP, Smith ZE, Shen DS, Slobodin D, Kolodzey J, Wronski CR, Wagner S. SCHOTTKY BARRIER DEVICES ON A-SI,GE:H,F ALLOYS Conference Record of the Ieee Photovoltaic Specialists Conference. 610-614.  1
1986 Fauchet PM, Hulin D, Migus A, Antonetti A, Kolodzey J, Wagner S. Initial stages of trapping in a-Si:H observed by femtosecond spectroscopy. Physical Review Letters. 57: 2438-2441. PMID 10033725 DOI: 10.1103/PhysRevLett.57.2438  1
1986 Kolodzey J, Aljishi S, Schwarz R, Slobodin D, Wagner S. Properties of a-Si, Ge: H, F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2499-2504. DOI: 10.1116/1.573717  1
1986 Chiang CL, Schwarz R, Slobodin DE, Kolodzey J, Wagner S. Measurement of the Minority-Carrier Diffusion Length in Thin Semiconductor Films Ieee Transactions On Electron Devices. 33: 1587-1592. DOI: 10.1109/T-ED.1986.22711  1
1986 Kolodzey J, Schwarz R, Aljishi S, Shen DS, Campbell I, Fauchet PM, Lyon SA, Wagner S. Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Superlattices and Microstructures. 2: 391-396. DOI: 10.1016/0749-6036(86)90054-6  1
1986 Kolodzey J, Aljishi S, Smith ZE, Chu V, Schwarz R, Wagner S. MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si,Ge:H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 237-242.  1
1986 Schwarz R, Okada Y, Chou SF, Kolodzey J, Slobodin D, Wagner S. FLUORINE INCORPORATION AND ANNEALING PROPERTIES OF a-Si,Ge:H,F ALLOYS STUDIED BY ELASTIC PROTON SCATTERING AND IR ABSORPTION Materials Research Society Symposia Proceedings. 70: 283-288.  1
1986 Aljishi S, Smith ZE, Slobodin D, Kolodzey J, Chu V, Schwarz R, Wagner S. ELECTRONIC TRANSPORT AND THE DENSITY OF STATES DISTRIBUTION IN a-(Si,Ge):H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 269-274.  1
1986 Kolodzey J, Aljishi S, Schwarz R, Shen DS, Quinlan S, Lyon SA, Wagner S. ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES Materials Research Society Symposia Proceedings. 70: 429-434.  1
1986 Shen DS, Kolodzey J, Slobodin D, Conde JP, Lane C, Campbell IH, Fauchet PM, Wagner S. MICROCRYSTALLINITY IN alpha -Si, Ge:H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 301-306.  1
1985 Kolodzey J, Slobodin D, Aljishi S, Quinlan S, Schwarz R, Shen DS, Fauchet PM, Wagner S. Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges Journal of Non-Crystalline Solids. 77: 897-900. DOI: 10.1016/0022-3093(85)90805-1  1
1985 Kolodzey J, Aljishi S, Schwarz R, Wagner S. GLOW DISCHARGE DEPOSITION OF alpha -Si//1// minus //xGe//x:H,F ALLOYS Electrochemical Society Extended Abstracts. 85: 248.  1
1985 Wagner S, Slobodin D, Kolodzey J, Aljishi S, Schwarz R. ALLOYS OF AMORPHOUS HYDROGENATED SILICON . 334-352.  1
1985 Schwarz R, Kolodzey J, Aljishi S, Wagner S, Kouzes RT. RADIATION DAMAGE BY 12 MEV PROTONS AND ANNEALING OF HYDROGENATED AMORPHOUS SILICON Conference Record of the Ieee Photovoltaic Specialists Conference. 903-908.  1
1985 Slobodin D, Kolodzey J, Aljishi S, Okada Y, Chu V, Shen DS, Schwarz R, Wagner S. A-SI//1- //X GE//X :H, F ALLOYS PREPARED BY DC AND RF GLOW DISCHARGE DEPOSITION Conference Record of the Ieee Photovoltaic Specialists Conference. 1505-1512.  1
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