James Kolodzey - Publications

Affiliations: 
Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering

73 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Zhang D, Liao Y, Li J, Wen T, Jin L, Wang X, Kolodzey J. Effect of in-situ annealing on the structural and optical properties of GeSn films grown by MBE Journal of Alloys and Compounds. 684: 643-648. DOI: 10.1016/j.jallcom.2016.05.238  0.48
2016 Zhang D, Jin L, Li J, Wen T, Liu C, Xu F, Kolodzey J, Liao Y. MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties Journal of Alloys and Compounds. 665: 131-136. DOI: 10.1016/j.jallcom.2016.01.038  0.52
2015 Zhang D, Ji L, Kolodzey J. Integration of microwave termination based on TaN thin films on ferrite substrates Epj Applied Physics. 72. DOI: 10.1051/epjap/2015140497  0.36
2015 Hazbun R, Bhargava N, Rodriguez-Toro VA, Goossen K, Kolodzey J, Ram-Mohan LR, Aina L, Fathimulla A, Hier H. Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates Infrared Physics and Technology. 69: 211-217. DOI: 10.1016/j.infrared.2015.01.023  0.4
2014 Kim S, Bhargava N, Gupta J, Coppinger M, Kolodzey J. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy. Optics Express. 22: 11029-34. PMID 24921801 DOI: 10.1364/OE.22.011029  0.68
2014 Fan X, Chen Y, Bi C, Xie Y, Kolodzey J, Wilson JD, Simons RN, Zhang H, Xiao JQ. Magnetic tunnel junction-based on-chip microwave phase and spectrum analyzer Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848560  0.6
2013 Kim S, Gupta J, Bhargava N, Coppinger M, Kolodzey J. Current-voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 34: 1217-1219. DOI: 10.1109/LED.2013.2278371  0.68
2013 Bhargava N, Coppinger M, Prakash Gupta J, Wielunski L, Kolodzey J. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4816660  0.64
2013 Gupta JP, Bhargava N, Kim S, Adam T, Kolodzey J. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4812747  0.44
2013 Coppinger M, Hart J, Bhargava N, Kim S, Kolodzey J. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4800448  0.64
2013 Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography Journal of Crystal Growth. 365: 44-53. DOI: 10.1016/j.jcrysgro.2012.12.002  0.72
2011 Coppinger M, Sustersic NA, Kolodzey J, Allik TH. Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging Optical Engineering. 50. DOI: 10.1117/1.3574066  0.8
2011 Kolodzey J, Coppinger M, Kim S, Bhargava N, Gupta J, Ni C, Yeo YK. The properties of germanium-tin alloys for infrared device applications 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135273  0.32
2011 Shah LR, Bhargava N, Kim S, Stearrett R, Kou X, Sun X, Sun S, Kolodzey J, Nowak ER, Xiao JQ. Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness Journal of Applied Physics. 109. DOI: 10.1063/1.3563096  0.56
2010 Fan X, Kim S, Kou X, Kolodzey J, Zhang H, Xiao JQ. Microwave phase detection with a magnetic tunnel junction Applied Physics Letters. 97. DOI: 10.1063/1.3511328  0.56
2010 Nataraj L, Sustersic N, Coppinger M, Gerlein LF, Kolodzey J, Cloutier SG. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3371759  0.36
2009 Cao R, Moriyama T, Wang WG, Fan X, Kolodzey J, Chen SH, Chang CR, Tserkovnyak Y, Nikolic BK, Xiao JQ. Spin-polarized transport and dynamics in magnetic tunneling structures Ieee Transactions On Magnetics. 45: 3434-3440. DOI: 10.1109/TMAG.2009.2024126  0.32
2009 Faleev N, Sustersic N, Bhargava N, Coppinger M, Kolodzey J. SiGe lattice-mismatched epitaxial heterostructures: Types and density of crystalline defects related to epitaxial growth conditions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378083  0.72
2009 Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy Ieee International Conference On Group Iv Photonics Gfp. 190-192. DOI: 10.1109/GROUP4.2009.5338321  0.32
2009 Aina L, Hier H, Fathimulla A, Lecates M, Kolodzey J, Goossen K, Coppinger M, Bhargava N. High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications Infrared Physics and Technology. 52: 310-316. DOI: 10.1016/j.infrared.2009.05.011  0.52
2008 Moriyama T, Cao R, Fan X, Xuan G, Nikoli? BK, Tserkovnyak Y, Kolodzey J, Xiao JQ. Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer. Physical Review Letters. 100: 067602. PMID 18352517 DOI: 10.1103/PhysRevLett.100.067602  0.52
2008 Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E. Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388. DOI: 10.1116/1.2891245  0.76
2008 Xuan G, Lv PC, Zhang X, Kolodzey J, Desalvo G, Powell A. Silicon carbide terahertz emitting devices Journal of Electronic Materials. 37: 726-729. DOI: 10.1007/s11664-007-0371-6  0.6
2007 Xuan G, Ghosh S, Kim S, Lv PC, Buma T, Weng B, Bamer K, Kolodzey J. Terahertz sensing of materials International Journal of High Speed Electronics and Systems. 17: 121-126. DOI: 10.1142/S0129156407004333  0.52
2007 Sustersic N, Kim S, Lv PC, Coppinger M, Troeger T, Kolodzey J. Terahertz emission from electrically pumped silicon germanium evtersubband devices International Journal of High Speed Electronics and Systems. 17: 115-120. DOI: 10.1142/S0129156407004321  0.4
2007 Adam TN, Kim S, Lv PC, Xuan G, Ray SK, Troeger RT, Prather D, Kolodzey J. Cyclic deep reactive ion etching with mask replenishment Journal of Micromechanics and Microengineering. 17: 1773-1780. DOI: 10.1088/0960-1317/17/9/004  0.72
2007 Xuan G, Kim S, Coppinger M, Sustersic N, Kolodzey J, Lv PC. Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices Applied Physics Letters. 91. DOI: 10.1063/1.2768195  0.72
2007 Kagan MS, Altukhov IV, Sinis VP, Paprotskly SK, Yassievich IN, Kolodzey J. Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures Physica Status Solidi (B) Basic Research. 244: 192-196. DOI: 10.1002/pssb.200672548  0.48
2007 Kagan MS, Altukhov IV, Paprotskiy SK, Sinis VP, Yassievich IN, Kolodzey J. Transient characteristics of SiGe/Si QW structures at THz lasing International Journal of Nanoscience. 6: 279-282.  0.48
2006 Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Paprotskiy SK, Yassievich IN, Odnoblyudov MA, Prokofiev AA, Kolodzey J. Stimulated THz emission of strained p-Ge and SiGe/Si quantum-well structures doped with shallow acceptors Ecs Transactions. 3: 745-757. DOI: 10.1149/1.2355869  0.36
2006 Weng B, Xuan G, Kolodzey J, Barner KE. Empirical mode decomposition as a tool for DNA sequence analysis from terahertz spectroscopy measurements 2006 Ieee International Workshop On Genomic Signal Processing and Statistics, Gensips 2006. 63-64. DOI: 10.1109/GENSIPS.2006.353157  0.36
2006 Guangchi X, Adam TN, Suehle J, Fitzgerald E, Lv P, Sustersic N, Coppinger MJ, Kolodzey J. Xenon Difluoride dry etching of Si, SiGe alloy and Ge Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006.  0.52
2005 Antonova IV, Obodnikov VI, Kagan MS, Troeger RT, Ray SK, Kolodzey J. Capacitance study of selectively doped SiGe/Si heterostructures Semiconductor Science and Technology. 20: 335-339. DOI: 10.1088/0268-1242/20/5/001  0.52
2005 Lv PC, Zhang X, Kolodzey J, Powell A. Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142294  0.44
2005 Lv PC, Zhang X, Kolodzey J, Odnoblyudov MA, Yassievich IN. The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices Journal of Applied Physics. 98. DOI: 10.1063/1.2132516  0.52
2005 Lv PC, Troeger RT, Zhang X, Adam TN, Kolodzey J, Odnoblyudov MA, Yassievich IN. Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters Journal of Applied Physics. 98. DOI: 10.1063/1.2128045  0.8
2005 Xuan G, Kolodzey J, Kapoor V, Gonye G. Characteristics of field-effect devices with gate oxide modification by DNA Applied Physics Letters. 87. DOI: 10.1063/1.2041826  0.56
2005 Lv P, Kolodzey J, Thomas RT, Kim S, Ray SK. The emission of Terahertz radiation from doped silicon devices Materials Research Society Symposium Proceedings. 832: 81-89.  0.56
2004 Kolodzey J, Adam TN, Troeger RT, Lv PC, Ray SK, Yassievich I, Odnoblyudov M, Kagan M. Terahertz emitters and detectors based on SiGe nanostructures International Journal of Nanoscience. 3: 171-176. DOI: 10.1142/S0219581X0400195X  0.6
2004 Xuan G, Kolodzey J, Kapoor V, Gonye G. Electrical effects of DNA molecules on silicon field effect transistor International Journal of High Speed Electronics and Systems. 14: 684-689. DOI: 10.1142/S0129156404002673  0.44
2004 Troeger RT, Adam TN, Ray SK, Lv PC, Kim S, Kolodzey J. Temperature dependence of terahertz emission from silicon devices doped with boron International Journal of High Speed Electronics and Systems. 14: 670-675. DOI: 10.1142/S012915640400265X  0.76
2004 Lv PC, Troeger RT, Kim S, Ray SK, Goossen KW, Kolodzey J, Yassievich IN, Odnoblyudov MA, Kagan MS. Terahertz emission from electrically pumped gallium doped silicon devices Applied Physics Letters. 85: 3660-3662. DOI: 10.1063/1.1808878  0.68
2004 Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741  0.6
2004 Lv PC, Troeger RT, Adam TN, Kim S, Kolodzey J, Yassievich IN, Odnoblyudov MA, Kagan MS. Electroluminescence at 7 terahertz from phosphorus donors in silicon Applied Physics Letters. 85: 22-24. DOI: 10.1063/1.1769589  0.72
2004 Kolodzey J, Lv P, Troeger RT, Kim S. Terahertz emitting devices based on dopant transitions in silicon 2004 1st Ieee International Conference On Group Iv Photonics. 37-39.  1
2004 Troeger RT, Adam TN, Ray SK, Lv P, Kim S, Xuan G, Ghosh S, Kolodzey J. Terahertz-emitting devices based on boron-doped silicon Ieee Mtt-S International Microwave Symposium Digest. 1: 361-364.  0.64
2003 Kagan MS, Altukhov IV, Chirkova EG, Korolev KA, Sinis VP, Troeger RT, Ray SK, Kolodzey J. Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures Proceedings of Spie - the International Society For Optical Engineering. 5023: 401-404. DOI: 10.1117/12.514394  0.36
2003 Adam TN, Troeger RT, Ray SK, Lehmann U, Kolodzey J. Terahertz emitting devices based on intersubband transitions in SiGe quantum wells Proceedings of Spie - the International Society For Optical Engineering. 5023: 398-400. DOI: 10.1117/12.514391  0.44
2003 Venkataraman S, Murakowski J, Adam TN, Kolodzey J, Prather DW. Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates Journal of Microlithography, Microfabrication and Microsystems. 2: 248-254. DOI: 10.1117/1.1610477  0.32
2003 Kolodzey J, Adam TN, Troeger RT, Lv PC, Ray SK, Looney G, Rosen A, Kagan MS, Yassievich IN. The design and operation of TeraHertz sources based on silicon germanium alloys 2003 Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems - Digest of Papers. 1-5. DOI: 10.1109/SMIC.2003.1196654  0.4
2003 Adam TN, Troeger RT, Ray SK, Lv PC, Kolodzey J. Terahertz electroluminescence from boron-doped silicon devices Applied Physics Letters. 83: 1713-1715. DOI: 10.1063/1.1605263  0.56
2003 Altukhov IV, Chirkova EG, Sinis VP, Kagan MS, Troeger RT, Ray SK, Kolodzey J, Prokofiev AA, Odnoblyudov MA, Yassievich IN. Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures Physica B: Condensed Matter. 340: 831-834. DOI: 10.1016/j.physb.2003.09.219  0.52
2003 Kagan MS, Altukhov IV, Chirkova EG, Sinis VP, Troeger RT, Ray SK, Kolodzey J. THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures Physica Status Solidi (B) Basic Research. 235: 293-296. DOI: 10.1002/pssb.200301571  0.64
2003 Kagan MS, Altukhov IV, Chirkova EG, Sinis VP, Troeger RT, Ray SK, Kolodzey J. THz lasing of SiGe/Si quantum-well structures due to shallow acceptors Physica Status Solidi Conferences. 135-138. DOI: 10.1002/pssb.200301536  0.4
2003 Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Yassievich IN, Kolodzey J. Terahertz stimulated emission from strained p-Ge and SiGe/Si structures Journal of Communications Technology and Electronics. 48: 1047-1054.  0.4
2002 Dashiell MW, Kolodzey J, Crozat P, Aniel F, Lourtioz JM. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 23: 357-359. DOI: 10.1109/LED.2002.1004234  0.36
2002 Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326.  0.76
2002 Troeger RT, Adam TN, Ray SK, Lv P, Lehmann U, Kolodzey J. Terahertz-emitting silicon-germanium devices Materials Research Society Symposium - Proceedings. 744: 43-48.  0.56
2002 Adam TN, Shi S, Ray SK, Troeger RT, Prather D, Kolodzey J. The Design and Fabrication of Microdisk Resonators for Terahertz Frequency Operation Proceedings Ieee Lester Eastman Conference On High Performance Devices. 402-408.  0.32
2002 Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264.  0.44
2002 Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206.  0.56
2001 Roe KJ, Kolodzey J, Swann CP, Tsao MW, Rabolt JF, Chen J, Brandes GR. The electrical and optical properties of thin film diamond implanted with silicon Applied Surface Science. 175: 468-473. DOI: 10.1016/S0169-4332(01)00120-9  0.4
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2826-2834. DOI: 10.1116/1.1319691  0.36
2000 Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM. Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1728-1731.  0.44
2000 Kolodzey J, Chowdhury EA, Adam TN, Qui G, Rau I, Olowolafe JO, Suehle JS, Chen Y. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon Ieee Transactions On Electron Devices. 47: 121128.  0.44
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. The mechanical properties of common interlevel dielectric films and their influences on aluminum interconnect extrusions Materials Research Society Symposium - Proceedings. 594: 421-426.  0.36
1999 Duschl R, Schmidt OG, Winter W, Eberl K, Dashiell MW, Kolodzey J, Jin-Phillipp NY, Phillipp F. Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001) Applied Physics Letters. 74: 1150-1152. DOI: 10.1063/1.123470  0.36
1999 Katulka GL, Kolodzey J, Olowolafe J. Analysis of high-temperature materials for application to electric weapon technology Ieee Transactions On Magnetics. 35: 356-360.  0.84
1999 Guedj C, Kolodzey J, Hairie A. Structure and lattice dynamics of Ge1-yCy, alloys using anharmonic Keating modeling Physical Review B - Condensed Matter and Materials Physics. 60: 15150-15153.  0.36
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J. MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures Proceedings of Spie - the International Society For Optical Engineering. 3278: 270-277. DOI: 10.1117/12.298210  0.4
1998 Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207  0.32
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J, Watson G. Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source Applied Physics Letters. 72: 833-835. DOI: 10.1063/1.120908  0.32
1998 Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50.  0.44
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