| Year |
Citation |
Score |
| 2020 |
Wise HG, Takana H, Ohuchi F, Dichiara AB. Field-Assisted Alignment of Cellulose Nanofibrils in a Continuous Flow-Focusing System. Acs Applied Materials & Interfaces. 12: 28568-28575. PMID 32453552 DOI: 10.1021/Acsami.0C07272 |
0.305 |
|
| 2019 |
Shimabukuro AE, Ishii A, Oikawa I, Yamazaki Y, Imura M, Kanai T, Ohuchi FS, Takamura H. Large and constant absorption coefficient in NbxTi1−xO2 thin films throughout the visible range Applied Surface Science. 464: 61-67. DOI: 10.1016/J.Apsusc.2018.09.036 |
0.322 |
|
| 2016 |
Krueger BW, Dandeneau CS, Nelson EM, Dunham ST, Ohuchi FS, Olmstead MA. Variation of Band Gap and Lattice Parameters of β-(AlxGa1-x)2O3 Powder Produced by Solution Combustion Synthesis Journal of the American Ceramic Society. DOI: 10.1111/Jace.14222 |
0.322 |
|
| 2014 |
Lan JL, Cherng SJ, Yang YH, Zhang Q, Subramaniyan S, Ohuchi FS, Jenekhe SA, Cao G. The effects of Ta2O5-ZnO films as cathodic buffer layers in inverted polymer solar cells Journal of Materials Chemistry A. 2: 9361-9370. DOI: 10.1039/C4Ta01350F |
0.345 |
|
| 2014 |
Lan JL, Liang Z, Yang YH, Ohuchi FS, Jenekhe SA, Cao G. The effect of SrTiO3: ZnO as cathodic buffer layer for inverted polymer solar cells Nano Energy. 4: 140-149. DOI: 10.1016/J.Nanoen.2013.12.010 |
0.33 |
|
| 2013 |
Tankut A, Miller KE, Vlases GC, Ohuchi FS. PVD Ti-films for plasma-facing first walls-Part II: Surface analytical observations during Ti gettering in TCSU Journal of Nuclear Materials. 438: 58-63. DOI: 10.1016/J.Jnucmat.2013.02.054 |
0.7 |
|
| 2013 |
Tankut A, Miller KE, Ohuchi FS. PVD Ti-films for plasma-facing first walls, Part I: Characterization of surface chemistry during H2 and O2 exposure Journal of Nuclear Materials. 433: 404-411. DOI: 10.1016/J.Jnucmat.2012.10.005 |
0.691 |
|
| 2012 |
Wang K, Zheng X, Ohuchi FS, Bordia RK. The conversion of perhydropolysilazane into SiON films characterized by X-ray photoelectron spectroscopy Journal of the American Ceramic Society. 95: 3722-3725. DOI: 10.1111/Jace.12045 |
0.414 |
|
| 2012 |
Lovejoy TC, Chen R, Yitamben EN, Shutthanadan V, Heald SM, Villora EG, Shimamura K, Zheng S, Dunham ST, Ohuchi FS, Olmstead MA. Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β-Ga 2O 3 Journal of Applied Physics. 111. DOI: 10.1063/1.4729289 |
0.317 |
|
| 2012 |
Lovejoy TC, Chen R, Zheng X, Villora EG, Shimamura K, Yoshikawa H, Yamashita Y, Ueda S, Kobayashi K, Dunham ST, Ohuchi FS, Olmstead MA. Band bending and surface defects in β-Ga 2O 3 Applied Physics Letters. 100. DOI: 10.1063/1.4711014 |
0.306 |
|
| 2011 |
Rice AH, Giridharagopal R, Zheng SX, Ohuchi FS, Ginger DS, Luscombe CK. Controlling vertical morphology within the active layer of organic photovoltaics using poly(3-hexylthiophene) nanowires and phenyl-C61-butyric acid methyl ester. Acs Nano. 5: 3132-40. PMID 21443250 DOI: 10.1021/Nn2002695 |
0.322 |
|
| 2011 |
Lovejoy TC, Yitamben EN, Heald SM, Ohuchi FS, Olmstead MA. Controlling the growth morphology and phase segregation of Mn-doped Ga 2Se3 on Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155312 |
0.4 |
|
| 2011 |
Yitamben EN, Lovejoy TC, Pakhomov AB, Heald SM, Negusse E, Arena D, Ohuchi FS, Olmstead MA. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2Se3/Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.045203 |
0.393 |
|
| 2010 |
Acton O, Acton BO, Ting GG, Shamberger PJ, Ohuchi FS, Ma H, Jen AK. Dielectric surface-controlled low-voltage organic transistors via n-alkyl phosphonic acid self-assembled monolayers on high-k metal oxide. Acs Applied Materials & Interfaces. 2: 511-20. PMID 20356199 DOI: 10.1021/Am9007648 |
0.655 |
|
| 2010 |
Shamberger PJ, Pakhomov AB, Ohuchi FS. Isothermal martensitic transformation kinetics in Ni-Mn-Sn ferromagnetic shape memory alloys Materials Research Society Symposium Proceedings. 1200: 65-70. DOI: 10.1557/Proc-1200-G02-04 |
0.627 |
|
| 2010 |
Lovejoy TC, Yitamben EN, Ohta T, Fain SC, Ohuchi FS, Olmstead MA. One-dimensional electronic states in Ga2Se3 on Si(001):As Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245313 |
0.578 |
|
| 2010 |
Shamberger PJ, Pakhomov AB, Koyama K, Ohuchi FS. Deviation of the magnetization change from the structural phase transition temperature in polycrystalline Ni-Mn-Sn in low magnetic fields Scripta Materialia. 63: 1161-1164. DOI: 10.1016/J.Scriptamat.2010.08.017 |
0.635 |
|
| 2010 |
Wang Y, Acton O, Ting G, Weidner T, Shamberge PJ, Maa H, Ohuchi FS, Castner DG, Jen AKY. Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistors Organic Electronics: Physics, Materials, Applications. 11: 1066-1073. DOI: 10.1016/J.Orgel.2010.03.006 |
0.353 |
|
| 2009 |
Yitamben EN, Lovejoy TC, Paul DF, Callaghan JB, Ohuchi FS, Olmstead MA. Surface morphology of Cr: Ga2 Se3 heteroepitaxy on Si(001) Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.075314 |
0.334 |
|
| 2009 |
Shamberger PJ, Ohuchi FS. Hysteresis of the martensitic phase transition in magnetocaloric-effect Ni-Mn-Sn alloys Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.144407 |
0.641 |
|
| 2009 |
Lovejoy TC, Yitamben EN, Heald SM, Ohuchi FS, Olmstead MA. MnSe phase segregation during heteroepitaxy of Mn doped Ga2 Se3 on Si(001) Applied Physics Letters. 95. DOI: 10.1063/1.3273858 |
0.408 |
|
| 2009 |
Liu XY, Liu YM, Takekawa S, Kitamura K, Ohuchi FS, Li JY. Nanopolar structures and local ferroelectricity of Sr0.61Ba 0.39Nb2O6 relaxor crystal across Curie temperature by piezoresponse force microscopy Journal of Applied Physics. 106. DOI: 10.1063/1.3273481 |
0.304 |
|
| 2009 |
Lovejoy TC, Yitamben EN, Shamir N, Morales J, Villora EG, Shimamura K, Zheng S, Ohuchi FS, Olmstead MA. Surface morphology and electronic structure of bulk single crystal Β -Ga 2 O 3 (100) Applied Physics Letters. 94. DOI: 10.1063/1.3086392 |
0.354 |
|
| 2009 |
Huang L, Peng F, Ohuchi FS. "In situ" XPS study of band structures at Cu2O/TiO2 heterojunctions interface Surface Science. 603: 2825-2834. DOI: 10.1016/J.Susc.2009.07.030 |
0.341 |
|
| 2009 |
Beck KM, Wiley WR, Venkatasubramanian E, Ohuchi F. Vacancies ordered in screw form (VOSF) and layered indium selenide thin film deposition by laser back ablation Applied Surface Science. 255: 9707-9711. DOI: 10.1016/J.Apsusc.2009.04.054 |
0.378 |
|
| 2009 |
Tankut A, Vlases GC, Miller KE, Ohuchi FS. Surface analytical observations during construction and initial operation of TCSU Journal of Fusion Energy. 28: 212-217. DOI: 10.1007/S10894-008-9175-9 |
0.676 |
|
| 2009 |
Shamberger PJ, Ohuchi FS. Hysteresis in temperature- and magnetic field-induced martensitic phase transitions in Ni-Mn-Sn heusler alloys Materials Research Society Symposium Proceedings. 1129: 149-154. |
0.612 |
|
| 2008 |
Miller KE, Grossnickle JA, Brooks RD, Deards CL, DeHart TE, Dellinger M, Fishburn MB, Guo HY, Hansen B, Hayward JW, Hoffman AL, Kimball WS, Lee KY, Lotz DE, Melnik PA, ... ... Ohuchi FS, et al. The TCS upgrade: Design, construction, conditioning, and enhanced RMF FRC performance Fusion Science and Technology. 54: 946-961. DOI: 10.13182/Fst08-A1910 |
0.665 |
|
| 2008 |
LIU X, OHUCHI F, KITAMURA K. PATTERNING OF SURFACE ELECTRONIC PROPERTIES AND SELECTIVE SILVER DEPOSITION ON LiNbO3 TEMPLATE Functional Materials Letters. 1: 177-182. DOI: 10.1142/S1793604708000344 |
0.345 |
|
| 2008 |
Lu CY, Adams JA, Yu Q, Ohta T, Olmstead MA, Ohuchi FS. Heteroepitaxial growth of the intrinsic vacancy semiconductor Al2 Se3 on Si(111): Initial structure and morphology Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075321 |
0.681 |
|
| 2008 |
Briseno AL, Mannsfeld SCB, Shamberger PJ, Ohuchi FS, Bao Z, Jenekhe SA, Xia Y. Self-assembly, molecular packing, and electron transport in n-type polymer semiconductor nanobelts Chemistry of Materials. 20: 4712-4719. DOI: 10.1021/Cm8010265 |
0.634 |
|
| 2008 |
Lu CY, Shamberger PJ, Yitamben EN, Beck KM, Joly AG, Olmstead MA, Ohuchi FS. Laser and electrical current induced phase transformation of In 2Se3 semiconductor thin film on Si(111) Applied Physics a: Materials Science and Processing. 93: 93-98. DOI: 10.1007/S00339-008-4776-8 |
0.691 |
|
| 2007 |
Iwanaga S, Marciniak M, Darling RB, Ohuchi FS. Thermopower and electrical conductivity of sodium-doped V2O 5 thin films Journal of Applied Physics. 101. DOI: 10.1063/1.2739311 |
0.34 |
|
| 2007 |
Suzuki N, Sarikaya M, Ohuchi FS. Adsorption of genetically engineered proteins studied by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Part B: Hierarchical cluster analysis (HCA) Surface and Interface Analysis. 39: 427-433. DOI: 10.1002/Sia.2539 |
0.505 |
|
| 2007 |
Suzuki N, Gamble L, Tamerler C, Sarikaya M, Castner DG, Ohuchi FS. Adsorption of genetically engineered proteins studied by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Part A: Data acquisition and principal component analysis (PCA) Surface and Interface Analysis. 39: 419-426. DOI: 10.1002/Sia.2536 |
0.526 |
|
| 2006 |
Ohuchi FS, Ghose S, Engelhard MH, Baer DR. Chemical bonding and electronic structures of the Al2SiO5 polymorphs, andalusite, sillimanite, and kyanite: X-ray photoelectron-and electron energy loss spectroscopy studies American Mineralogist. 91: 740-746. DOI: 10.2138/Am.2006.1887 |
0.333 |
|
| 2006 |
Kukuruznyak DA, Moyer JG, Ohuchi FS. Improved aging characteristics of NTC thermistor thin films fabricated by a hybrid sol-gel-MOD process Journal of the American Ceramic Society. 89: 189-192. DOI: 10.1111/J.1551-2916.2005.00653.X |
0.366 |
|
| 2006 |
Moyer JG, Kukuruznyak DA, Nguyen N, Prowse MS, Ohuchi FS. Thermopower and electrical conductivity of Mn 1.68-X Cu 0.6+X+Y+Z Co 0.24-Y Ni 0.48-Z thin film oxides obtained through metal organic decomposition processing Journal of Applied Physics. 100. DOI: 10.1063/1.2359067 |
0.327 |
|
| 2006 |
Schmidt DA, Ohta T, Lu CY, Bostwick AA, Yu Q, Rotenberg E, Ohuchi FS, Olmstead MA. Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001) Applied Physics Letters. 88. DOI: 10.1063/1.2199451 |
0.574 |
|
| 2006 |
Klust A, Yu Q, Olmstead MA, Ohta T, Ohuchi FS, Bierkandt M, Deiter C, Wollschläger J. Contrast in scanning probe microscopy images of ultrathin insulator films Applied Physics Letters. 88. DOI: 10.1063/1.2172397 |
0.544 |
|
| 2006 |
Kukuruznyak DA, Moyer JG, Prowse MS, Nguyen N, Rehr JJ, Ohuchi FS. Relationship between electronic and crystal structure in Cu-Ni-Co-Mn-O spinels: Part B: Binding energy anomaly in Cu1+ photoemission spectrum Journal of Electron Spectroscopy and Related Phenomena. 150: 282-287. DOI: 10.1016/J.Elspec.2005.06.013 |
0.304 |
|
| 2006 |
Kukuruznyak DA, Moyer JG, Nguyen NT, Stern EA, Ohuchi FS. Relationship between electronic and crystal structure in Cu-Ni-Co-Mn-O spinels: Part A: Temperature-induced structural transformation Journal of Electron Spectroscopy and Related Phenomena. 150: 275-281. DOI: 10.1016/J.Elspec.2005.06.009 |
0.312 |
|
| 2006 |
Kukuruznyak DA, Ahmet P, Chikyow T, Yamamoto A, Ohuchi FS. Electrical screening of ternary NiO-Mn2O3-Co 3O4 composition spreads Applied Surface Science. 252: 3828-3832. DOI: 10.1016/J.Apsusc.2005.05.073 |
0.313 |
|
| 2005 |
Ohta T, Schmidt DA, Meng S, Klust A, Bostwick A, Yu Q, Olmstead MA, Ohuchi FS. Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001). Physical Review Letters. 94: 116102. PMID 15903873 DOI: 10.1103/Physrevlett.94.116102 |
0.581 |
|
| 2005 |
Ohuchi FS, Kukuruznyak DA, Chiyow T. Compositional design and property adjustment of multi-component oxides for thermoelectric applications Materials Science Forum. 502: 3-6. DOI: 10.4028/Www.Scientific.Net/Msf.502.3 |
0.321 |
|
| 2005 |
Kukuruznyak DA, Ahmet P, Yamamoto A, Ohuchi F, Chikyow T. Combinatorial Fabrication and Characterization of Ternary La2O3–Mn2O3–Co3O4 Composition Spreads Japanese Journal of Applied Physics. 44: 6164-6166. DOI: 10.1143/Jjap.44.6164 |
0.337 |
|
| 2005 |
Klust A, Ohta T, Bostwick AA, Rotenberg E, Yu Q, Ohuchi FS, Olmstead MA. Electronic structure evolution during the growth of ultrathin insulator films on semiconductors: From interface formation to bulklike CaF2Si(111) films Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.205336 |
0.596 |
|
| 2005 |
Adams JA, Bostwick A, Ohta T, Ohuchi FS, Olmstead MA. Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.195308 |
0.587 |
|
| 2005 |
Rudolph R, Pettenkofer C, Bostwick AA, Adams JA, Ohuchi F, Olmstead MA, Jaeckel B, Klein A, Jaegermann W. Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination New Journal of Physics. 7: 108-108. DOI: 10.1088/1367-2630/7/1/108 |
0.379 |
|
| 2005 |
Adams JA, Bostwick AA, Ohuchi FS, Olmstead MA. Chemical passivity of III-VI bilayer terminated Si(111) Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112200 |
0.361 |
|
| 2005 |
Kukuruznyak DA, Ahmet P, Chikyow T, Yamamoto A, Ohuchi FS. Combinatorial screening of ternary NiO- Mn 2O 3-CuO composition spreads Journal of Applied Physics. 98. DOI: 10.1063/1.2032613 |
0.306 |
|
| 2005 |
Kukuruznyak DA, Miller JB, Gregg MC, Ohuchi FS. Fast response thin-film thermistor for measurements in ocean waters Review of Scientific Instruments. 76. DOI: 10.1063/1.1851494 |
0.337 |
|
| 2004 |
Ohta T, Klust A, Adams JA, Yu Q, Olmstead MA, Ohuchi FS. Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 69: 1253221-1253228. DOI: 10.1103/Physrevb.69.125322 |
0.357 |
|
| 2004 |
Klust A, Ohta T, Bostwick AA, Yu Q, Ohuchi FS, Olmstead MA. Atomically resolved imaging of a CaF bilayer on Si(111): Subsurface atoms and the image contrast in scanning force microscopy Physical Review B - Condensed Matter and Materials Physics. 69: 354051-354055. DOI: 10.1103/Physrevb.69.035405 |
0.521 |
|
| 2001 |
Lee M, Ohuchi FS. Near-edge valence-band structure of amorphous hydrogenated Si–C thin films characterized by Auger and photoemission processes Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 2013-2016. DOI: 10.1116/1.1359547 |
0.376 |
|
| 2001 |
Kukuruznyak DA, Han S, Lee M, Omland KA, Gregg MC, Stern EA, Ohuchi FS. Controlled coordination and oxidation states of copper and manganese cations in complex nickel–copper–cobalt–manganese oxide thin films Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1923-1928. DOI: 10.1116/1.1355361 |
0.329 |
|
| 2001 |
Meng S, Schroeder BR, Bostwick A, Olmstead MA, Rotenberg E, Ohuchi FS. Low-energy photoelectron diffraction structure determination of GaSe-bilayer-passivated Si(111) Physical Review B - Condensed Matter and Materials Physics. 64: 2353141-2353148. DOI: 10.1103/Physrevb.64.235314 |
0.322 |
|
| 2001 |
Kukuruznyak DA, Bulkley SA, Omland KA, Ohuchi FS, Gregg MC. Preparation and properties of thermistor thin-films by metal organic decomposition Thin Solid Films. 385: 89-95. DOI: 10.1016/S0040-6090(00)01890-3 |
0.387 |
|
| 2000 |
Kim BS, oh sH, Son SY, Park KW, Choi D, Dai ZR, Ohuchi FS. The effect of interface on the electrical properties of (Ba, Sr)TiO3 adopting the perovskite electrodes Journal of Applied Physics. 87: 4425-4429. DOI: 10.1063/1.373087 |
0.334 |
|
| 2000 |
Taketomi S, Dai ZR, Ohuchi FS. Electron diffraction of yttrium iron oxide nanocrystals prepared by the alkoxide method Journal of Magnetism and Magnetic Materials. 217: 5-13. DOI: 10.1016/S0304-8853(00)00336-X |
0.314 |
|
| 2000 |
Endou A, Little TW, Yamada A, Teraishi K, Kubo M, Ammal SSC, Miyamoto A, Kitajima M, Ohuchi FS. Chemical interaction of NF3 with Si (Part II): density functional calculation studies Surface Science. 445: 243-248. DOI: 10.1016/S0039-6028(99)01062-6 |
0.32 |
|
| 2000 |
Little TW, Ohuchi FS. Chemical interaction of NF3 ion beams and plasmas with Si (Part I): X-ray photoelectron spectroscopy studies Surface Science. 445: 235-242. DOI: 10.1016/S0039-6028(99)01061-4 |
0.31 |
|
| 1999 |
Dai ZR, Chegwidden SR, Rumaner LE, Ohuchi FS. Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy Journal of Applied Physics. 85: 2603-2608. DOI: 10.1063/1.369578 |
0.389 |
|
| 1999 |
Son SY, Kim BS, Oh SH, Choi DK, Yoo CY, Lee SI, Dai ZR, Ohuchi FS. Electrical properties of (Ba,Sr)TiO3 on (Sr,Ca)RuO3 electrode Journal of Materials Science. 34: 6115-6119. DOI: 10.1023/A:1004717803707 |
0.323 |
|
| 1999 |
Dai ZR, Son SY, Kim BS, Choi DK, Ohuchi FS. Electrically conducting oxide thin films of (Sr,Ca)RuO3 and structural compatibility with (Ba,Sr)TiO3 Materials Research Bulletin. 34: 933-942. DOI: 10.1016/S0025-5408(99)00091-4 |
0.358 |
|
| 1999 |
Ueno K, Kawayama M, Dai ZR, Koma A, Ohuchi FS. Growth and characterization of Ga2Se3/GaAs(1 0 0) epitaxial thin films Journal of Crystal Growth. 207: 69-76. DOI: 10.1016/S0022-0248(99)00359-0 |
0.386 |
|
| 1998 |
Wu Y, Ohuchi FS, Cao GZ. Synthesis and Dielectric Properties of SrBi2Nb2O9 Layered Perovskite by Sol-Gel Processing Mrs Proceedings. 541. DOI: 10.1557/Proc-541-253 |
0.364 |
|
| 1998 |
Little TW, Briggs SC, Ohuchi FS. Surface science studies of NF3 plasma and ion beam interactions with silicon Materials Research Society Symposium - Proceedings. 532: 165-170. DOI: 10.1557/Proc-532-165 |
0.309 |
|
| 1998 |
Rumaner LE, Olmstead MA, Ohuchi FS. Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 977-988. DOI: 10.1116/1.590055 |
0.392 |
|
| 1998 |
Chegwidden S, Dai Z, Olmstead MA, Ohuchi FS. Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 2376-2380. DOI: 10.1116/1.581355 |
0.41 |
|
| 1998 |
Shimada T, Hamaguchi K, Koma A, Ohuchi FS. Electronic structures at the interfaces between copper phthalocyanine and layered materials Applied Physics Letters. 72: 1869-1871. DOI: 10.1063/1.121210 |
0.385 |
|
| 1998 |
Chung JW, Dai ZR, Adib K, Ohuchi FS. Raman scattering and high resolution electron microscopy studies of metal-organic chemical vapor deposition-tungsten disulfide thin films Thin Solid Films. 335: 106-111. DOI: 10.1016/S0040-6090(98)00954-7 |
0.362 |
|
| 1998 |
Chung JW, Dai ZR, Ohuchi FS. WS2 thin films by metal organic chemical vapor deposition Journal of Crystal Growth. 186: 137-150. DOI: 10.1016/S0022-0248(97)00479-X |
0.395 |
|
| 1997 |
Chung JW, Ohuchi FS. Deposition of AlN on ws2 (0001) substrate by atomic layer growth process Materials Research Society Symposium - Proceedings. 449: 379-384. DOI: 10.1557/Proc-449-379 |
0.375 |
|
| 1997 |
Little TW, Ohuchi FS. X-ray photoelectron spectroscopy investigation of the interaction of NF3 with silicon Materials Research Society Symposium - Proceedings. 439: 251-256. DOI: 10.1557/Proc-438-161 |
0.327 |
|
| 1997 |
Richards AC, Richards MR, Ohuchi FS. A new versatile coating technique: Levitation chemical vapor deposition Surface and Coatings Technology. 88: 112-118. DOI: 10.1016/S0257-8972(96)02936-2 |
0.314 |
|
| 1997 |
Rumaner LE, Gray JL, Ohuchi FS. Nucleation and growth of GaSe on GaAs by Van der Waal epitaxy Journal of Crystal Growth. 177: 17-27. DOI: 10.1016/S0022-0248(96)00970-0 |
0.341 |
|
| 1995 |
Rumaner LE, Gray JL, Ohuchi FS, Ueno K, Koma A. Substrate effects on the nucleation and growth of GaSe layers by van der Waals epitaxy Materials Research Society Symposium - Proceedings. 382: 101-106. DOI: 10.1557/Proc-382-101 |
0.392 |
|
| 1995 |
Hu X, Yan H, Kohyama M, Ohuchi FS. Electronic structure of beta -SiC surfaces Journal of Physics: Condensed Matter. 7: 1069-1099. DOI: 10.1088/0953-8984/7/6/010 |
0.321 |
|
| 1995 |
Ludviksson A, Rumaner LE, Rogers JW, Ohuchi FS. Vacuum sublimation of GaSe: a molecular source for deposition of GaSe Journal of Crystal Growth. 151: 114-120. DOI: 10.1016/0022-0248(94)01025-0 |
0.385 |
|
| 1994 |
Rumaner LE, Ohuchi FS. Van der Waals epitaxy of GaSe on GaAs (111) Materials Research Society Symposium - Proceedings. 340: 527-537. DOI: 10.1557/Proc-340-537 |
0.399 |
|
| 1994 |
Gray JL, Rumaner LE, Yoo HM, Ohuchi FS. Van der Waals epitaxy versus homoepitaxy of low temperature GaAs (111) layers Materials Research Society Symposium - Proceedings. 340: 381-385. DOI: 10.1557/Proc-340-381 |
0.351 |
|
| 1994 |
Hu X, Yan H, Ohuchi FS. Electronic Structures of β-SiC(001) Surfaces and Al/β-SiC(001) Interface Mrs Proceedings. 339: 15. DOI: 10.1557/Proc-339-15 |
0.332 |
|
| 1994 |
Ohuchi FS, Lin TJ, Antonelli JA, Yang DJ. Preparation and in-situ characterization of polycarbosilane thin films by d.c. plasma-enhanced deposition Thin Solid Films. 245: 10-16. DOI: 10.1016/0040-6090(94)90870-2 |
0.371 |
|
| 1993 |
Koma A, Shimada T, Ohuchi FS. Molecular beam epitaxy of snse2: Chemistry and electronic properties of interfaces Japanese Journal of Applied Physics. 32: 1182-1185. DOI: 10.1143/Jjap.32.1182 |
0.42 |
|
| 1993 |
Shimada T, Ohuchi FS, Koma A. Polytypes and charge density waves of ultrathin TaS2 films grown by van der Waals epitaxy Surface Science Letters. 291: 57-66. DOI: 10.1016/0167-2584(93)90286-R |
0.374 |
|
| 1992 |
Shimada T, Ohuchi FS, Parkinson BA. Thermal decomposition of SnS2 and SnSe2: Novel molecular-beam epitaxy sources for sulfur and selenium Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 539-542. DOI: 10.1116/1.578184 |
0.303 |
|
| 1991 |
Shimada T, Ohuchi FS, Parkinson BA. Epitaxial Growth and Charge Density Wave of TaSe2 Mrs Proceedings. 230. DOI: 10.1557/Proc-230-231 |
0.318 |
|
| 1991 |
Maruyama B, Ohuchi FS. H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system Journal of Materials Research. 6: 1131-1134. DOI: 10.1557/Jmr.1991.1131 |
0.343 |
|
| 1991 |
French RH, Ling JW, Ohuchi FS, Chen CT. Electronic structure of -BaB2O4 and LiB3O5 nonlinear optical crystals Physical Review B. 44: 8496-8502. DOI: 10.1103/Physrevb.44.8496 |
0.3 |
|
| 1991 |
Parkinson BA, Ohuchi FS, Ueno K, Koma A. Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials Applied Physics Letters. 58: 472-474. DOI: 10.1063/1.104611 |
0.366 |
|
| 1991 |
Ohuchi FS, Shimada T, Parkinson BA, Ueno K, Koma A. Growth of MoSe2 thin films with Van der Waals epitaxy Journal of Crystal Growth. 111: 1033-1037. DOI: 10.1016/0022-0248(91)91127-V |
0.379 |
|
| 1991 |
Selverian JH, Ohuchi FS, Bortz M, Notis MR. Interface reactions between titanium thin films and (1-1 2) sapphire substrates Journal of Materials Science. 26: 6300-6308. DOI: 10.1007/Bf02387808 |
0.409 |
|
| 1990 |
Ohuchi FS, Zhong Q. Electronic structure of metal-ceramic interfaces. Isij International. 30: 1059-1065. DOI: 10.2355/Isijinternational.30.1059 |
0.338 |
|
| 1990 |
French RH, Jones DJ, Kasowski RV, Ohuchi FS, Bortz ML. Temperature dependence of the electronic structure of oxides: MgO, MgAl2O4 and Al2O3 Physica Scripta. 41: 537-541. DOI: 10.1088/0031-8949/41/4/036 |
0.306 |
|
| 1990 |
Ohuchi FS, Parkinson BA, Ueno K, Koma A. Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2 Journal of Applied Physics. 68: 2168-2175. DOI: 10.1063/1.346574 |
0.409 |
|
| 1989 |
Maruyama B, Ohuchi FS, Rabenberg L. Chemical Interactions in the Aluminum-Carbon and Aluminum-Silicon Carbide Systems Mrs Proceedings. 170. DOI: 10.1557/Proc-170-167 |
0.318 |
|
| 1989 |
Selverian JH, Ohuchi FS, Notis MR. Microstructure and Kinetics of the Interface Reaction Between Titanium Thin Films and (1 1 2) Sapphire Substrates Mrs Proceedings. 167: 335. DOI: 10.1557/Proc-167-335 |
0.334 |
|
| 1989 |
Zhong Q, Ohuchi FS. An Atomistic Study of the Nickel-Alumina Interfacial Reactions Mrs Proceedings. 153. DOI: 10.1557/Proc-153-71 |
0.354 |
|
| 1989 |
Bortz ML, Ohuchi FS, Parkinson BA. An investigation of the growth of Au and Cu on the van der waals surfaces of MoTe2 and WTe2 Surface Science. 223: 285-298. DOI: 10.1016/0167-2584(89)90678-6 |
0.339 |
|
| 1988 |
Ohuchi FS, French RH. Summary Abstract: Effect of oxygen incorporation in AIN thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1695-1696. DOI: 10.1116/1.575313 |
0.303 |
|
| 1988 |
Bortz M, Ohuchi FS. An x-ray photoelectron spectroscopy study of the interfacial relations between titanium and cordierite-based ceramic thin films Journal of Applied Physics. 64: 2054-2058. DOI: 10.1063/1.341712 |
0.383 |
|
| 1988 |
French RH, Coble RL, Kasowski RV, Ohuchi FS. Vacuum ultraviolet, photoemission and theoretical studies of the electronic structure of Al2O3 up to 1000°C Physica B+C. 150: 47-49. DOI: 10.1016/0378-4363(88)90104-0 |
0.329 |
|
| 1988 |
Kasowski RV, Ohuchi FS, French RH. Theoretical and experimental studies on Cu metallization of Al2O3 Physica B+C. 150: 44-46. DOI: 10.1016/0378-4363(88)90103-9 |
0.319 |
|
| 1988 |
Bortz M, Ohuchi FS. Synthesis and characterization of cordierite-based ceramic thin films Thin Solid Films. 162: 315-323. DOI: 10.1016/0040-6090(88)90220-9 |
0.394 |
|
| 1988 |
Jaegermann W, Ohuchi FS, Parkinson BA. Interaction of Cu, Ag and Au with van der Waals faces of WS, and SnS2 Surface Science. 201: 211-227. DOI: 10.1016/0039-6028(88)90607-3 |
0.318 |
|
| 1988 |
Jaegermann W, Ohuchi FS, Parkinson BA. The interaction of group IB metals with van der waals faces of semiconducting metal dichalcogenides Surface and Interface Analysis. 12: 293-296. DOI: 10.1002/Sia.740120504 |
0.307 |
|
| 1987 |
Doering DL, Ohuchi FS, Jaegermann W, Parkinson BA. Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide Mrs Proceedings. 102. DOI: 10.1557/Proc-102-41 |
0.339 |
|
| 1987 |
Ohuchi FS, French RH, Kasowski RV. Summary Abstract: A study of room‐temperature Cu–Al2O3 and Cu–AlN interfacial reactions Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 1175-1177. DOI: 10.1116/1.574632 |
0.301 |
|
| 1987 |
Ohuchi FS, French RH, Kasowski RV. Cu deposition on Al2O3 and AlN surfaces: Electronic structure and bonding Journal of Applied Physics. 62: 2286-2289. DOI: 10.1063/1.339485 |
0.328 |
|
| 1987 |
Freilich SC, Ohuchi FS. Reactions at the polyimide-metal interface Polymer. 28: 1908-1914. DOI: 10.1016/0032-3861(87)90299-0 |
0.31 |
|
| 1984 |
Chowdhry U, Ferretti A, Firment L, Machiels C, Ohuchi F, Sleight A, Staley R. Mechanism and surface structural effects in methanol oxidation over molybdates Applications of Surface Science. 19: 360-372. DOI: 10.1016/0378-5963(84)90073-4 |
0.309 |
|
| 1983 |
Hoflund GB, Cox DF, Ohuchi F, Holloway PH, Laitinen HA. An ESD and SIMS study of the composition of platinized, antimony-doped tin oxide films. I Applications of Surface Science. 14: 281-296. DOI: 10.1016/0378-5963(83)90043-0 |
0.392 |
|
| 1980 |
Ogino M, Ohuchi F, Hench LL. Compositional dependence of the formation of calcium phosphate films on bioglass Journal of Biomedical Materials Research. 14: 55-64. PMID 6244314 DOI: 10.1002/Jbm.820140107 |
0.338 |
|
| 1980 |
Ohuchi F, Ogino M, Holloway PH, Pantano CG. Electron beam effects during analysis of glass thin films with auger electron spectroscopy Surface and Interface Analysis. 2: 85-90. DOI: 10.1002/Sia.740020303 |
0.346 |
|
| 1979 |
Ohuchi F, Clark DE, Hench LL. Effect of Crystallization on the Auger Electron Signal Decay in an Li2O·2SiO2 Glass and Glass‐Ceramic Journal of the American Ceramic Society. 62: 500-503. DOI: 10.1111/J.1151-2916.1979.Tb19115.X |
0.302 |
|
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