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Biplob K. Daas, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Optics Physics
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Daniels KM, Obe A, Daas BK, Weidner J, Williams C, Sudarshan TS, Chandrashekhar M. Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Journal of the Electrochemical Society. 163: E130-E134. DOI: 10.1149/2.0791605Jes  0.737
2014 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001) Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.610  0.751
2014 Daas BK, Dutta A. Electromagnetic dispersion of surface plasmon polariton at the EG/SiC interface Journal of Materials Research. 760. DOI: 10.1557/Jmr.2014.266  0.476
2013 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Ouisse T, Chaussende D, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.155439  0.745
2013 Shetu SS, Omar SU, Daniels KM, Daas B, Andrews J, Ma S, Sudarshan TS, Chandrashekhar MVS. Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC Journal of Applied Physics. 114. DOI: 10.1063/1.4826899  0.715
2012 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Molecular gas adsorption induced carrier transport studies of epitaxial graphene using IR reflection spectroscopy Materials Science Forum. 717: 665-668. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.665  0.737
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.661  0.771
2012 Daas BK, Daniels K, Shetu S, Sudarshan TS, Chandrashekhar MVS. Study of epitaxial graphene on non-polar 6H-SiC faces Materials Science Forum. 717: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.633  0.704
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489  0.768
2012 Daas BK, Omar SU, Shetu S, Daniels KM, Ma S, Sudarshan TS, Chandrashekhar MVS. Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: On the growth of multilayer films Crystal Growth and Design. 12: 3379-3387. DOI: 10.1021/Cg300456V  0.726
2011 Daas BK, Islam MM, Chowdhury IA, Zhao F, Sudarshan TS, Chandrashekhar MVS. Doping dependence of thermal oxidation on n-type 4H-SiC Ieee Transactions On Electron Devices. 58: 115-121. DOI: 10.1109/Ted.2010.2088270  0.617
2011 Daas BK, Daniels KM, Sudarshan TS, Chandrashekhar MVS. Polariton enhanced infrared reflection of epitaxial graphene Journal of Applied Physics. 110. DOI: 10.1063/1.3666069  0.762
2011 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Méndez Torres A, Chandrashekhar MVS. Advance in molecular gas sensing studies using epitaxial graphene Transactions of the American Nuclear Society. 105: 260-261.  0.727
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