Year |
Citation |
Score |
2021 |
Jahangir I, Uddin MA, Franken A, Singh AK, Koley G. Electrically or chemically tunable photodetector with ultra high responsivity using graphene/InN nanowire based mixed dimensional barristors. Nanotechnology. PMID 34293722 DOI: 10.1088/1361-6528/ac171a |
0.308 |
|
2020 |
Bayram F, Gajula D, Khan D, Koley G. Investigation of AlGaN/GaN HFET and VO Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers. Micromachines. 11. PMID 32962251 DOI: 10.3390/Mi11090875 |
0.376 |
|
2020 |
Khan D, Li H, Bayram F, Gajula D, Koley G. Photoacoustic Detection of H and NH Using Plasmonic Signal Enhancement in GaN Microcantilevers. Micromachines. 11. PMID 32668600 DOI: 10.3390/Mi11070680 |
0.319 |
|
2020 |
Pedowitz MD, Kim S, Lewis DI, Uppalapati B, Khan D, Bayram F, Koley G, Daniels KM. Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ -MnO₂-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing Ieee\/Asme Journal of Microelectromechanical Systems. 1-7. DOI: 10.1109/Jmems.2020.3007342 |
0.357 |
|
2019 |
Li H, Singh A, Bayram F, Childress AS, Rao AM, Koley G. Impact of oxygen plasma treatment on carrier transport and molecular adsorption in graphene. Nanoscale. PMID 31143919 DOI: 10.1039/C9Nr02251A |
0.317 |
|
2019 |
Kim S, Dong Y, Hossain MM, Gorman S, Towfeeq I, Gajula DR, Childress ASC, Rao AM, Koley G. Piezoresistive Graphene/P(VDF-TrFE) Heterostructure Based Highly Sensitive and Flexible Pressure Sensor. Acs Applied Materials & Interfaces. PMID 30964640 DOI: 10.1021/Acsami.9B01964 |
0.387 |
|
2019 |
Gorman S, Gajula D, Kim S, Koley G. Impact of volatile organic compound exposure on electrical breakdown in GaN dual channel microcantilevers Applied Physics Letters. 114: 114103. DOI: 10.1063/1.5088970 |
0.337 |
|
2019 |
Li H, Han X, Childress AS, Rao AM, Koley G. Investigation of carrier density and mobility variations in graphene caused by surface adsorbates Physica E: Low-Dimensional Systems and Nanostructures. 107: 96-100. DOI: 10.1016/J.Physe.2018.11.021 |
0.34 |
|
2018 |
Gajula D, Jahangir I, Koley G. High Temperature AlGaN/GaN Membrane Based Pressure Sensors. Micromachines. 9. PMID 30424140 DOI: 10.3390/Mi9050207 |
0.359 |
|
2018 |
Bayram F, Khan D, Li H, Hossain MM, Koley G. Piezotransistive GaN microcantilevers based surface work function measurements Japanese Journal of Applied Physics. 57: 040301. DOI: 10.7567/Jjap.57.040301 |
0.316 |
|
2018 |
Kim S, Towfeeq I, Dong Y, Gorman S, Rao A, Koley G. P(VDF-TrFE) Film on PDMS Substrate for Energy Harvesting Applications Applied Sciences. 8: 213. DOI: 10.3390/App8020213 |
0.324 |
|
2018 |
Walsh KB, Li H, Koley G. Graphene alters the properties of voltage-gated Ca
2+
channels in rat cardiomyocytes Biomedical Physics & Engineering Express. 4: 065004. DOI: 10.1088/2057-1976/Aad0Cd |
0.311 |
|
2017 |
Savchak M, Borodinov N, Burtovyy R, Anayee M, Hu K, Ma R, Grant AM, Li H, Cutshall D, Wen YM, Koley G, Harrell WR, Chumanov G, Tsukruk VV, Luzinov I. Highly conductive and transparent reduced graphene oxide nanoscale films via thermal conversion of polymer-encapsulated graphene oxide sheets. Acs Applied Materials & Interfaces. PMID 29286620 DOI: 10.1021/Acsami.7B16500 |
0.353 |
|
2017 |
Jahangir I, Uddin MA, Singh AK, Koley G, Chandrashekhar MVS. Richardson constant and electrostatics in transfer-free CVD grown few-layer MoS2/graphene barristor with Schottky barrier modulation >0.6eV Applied Physics Letters. 111: 142101. DOI: 10.1063/1.5005796 |
0.373 |
|
2017 |
Jahangir I, Koley G, Chandrashekhar MVS. Back gated FETs fabricated by large-area, transfer-free growth of a few layer MoS2 with high electron mobility Applied Physics Letters. 110: 182108. DOI: 10.1063/1.4982595 |
0.64 |
|
2017 |
Li H, Zhu Y, Islam MS, Rahman MA, Walsh KB, Koley G. Graphene field effect transistors for highly sensitive and selective detection of K+ ions Sensors and Actuators B: Chemical. 253: 759-765. DOI: 10.1016/J.Snb.2017.06.129 |
0.331 |
|
2016 |
Jahangir I, Koley G. Dual-channel microcantilever heaters for volatile organic compound detection and mixture analysis. Scientific Reports. 6: 28735. PMID 27381318 DOI: 10.1038/Srep28735 |
0.341 |
|
2016 |
Uddin MA, Singh A, Daniels K, Vogt T, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors Japanese Journal of Applied Physics. 55: 110312. DOI: 10.7567/Jjap.55.110312 |
0.621 |
|
2016 |
Jahangir I, Koley G. Modeling the performance limits of novel microcantilever heaters for volatile organic compound detection Journal of Micromechanics and Microengineering. 27: 015024. DOI: 10.1088/1361-6439/27/1/015024 |
0.329 |
|
2016 |
Uddin MA, Zhu Y, Singh A, Li H, Islam MS, Koley G. Effect of epoxy exposure on the electronic properties of graphene Journal of Physics D: Applied Physics. 49: 46LT02. DOI: 10.1088/0022-3727/49/46/46Lt02 |
0.342 |
|
2016 |
Zhong B, Uddin MA, Singh A, Webb R, Koley G. Temperature dependent carrier mobility in graphene: Effect of Pd nanoparticle functionalization and hydrogenation Applied Physics Letters. 108. DOI: 10.1063/1.4942975 |
0.326 |
|
2016 |
Jahangir I, Quddus EB, Koley G. Unique detection of organic vapors below their auto-ignition temperature using III-V Nitride based triangular microcantilever heater Sensors and Actuators, B: Chemical. 222: 459-467. DOI: 10.1016/J.Snb.2015.08.059 |
0.783 |
|
2015 |
Talukdar A, Faheem Khan M, Lee D, Kim S, Thundat T, Koley G. Piezotransistive transduction of femtoscale displacement for photoacoustic spectroscopy. Nature Communications. 6: 7885. PMID 26258983 DOI: 10.1038/Ncomms8885 |
0.361 |
|
2015 |
Uddin MA, Singh AK, Daniels KM, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor 2015 Transducers - 2015 18th International Conference On Solid-State Sensors, Actuators and Microsystems, Transducers 2015. 1381-1384. DOI: 10.1109/TRANSDUCERS.2015.7181190 |
0.584 |
|
2015 |
Uddin MA, Glavin N, Singh A, Naguy R, Jespersen M, Voevodin A, Koley G. Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride Applied Physics Letters. 107. DOI: 10.1063/1.4936191 |
0.369 |
|
2014 |
Uddin MA, Singh AK, Sudarshan TS, Koley G. Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity. Nanotechnology. 25: 125501. PMID 24569178 DOI: 10.1088/0957-4484/25/12/125501 |
0.388 |
|
2014 |
Singh A, Uddin A, Sudarshan T, Koley G. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor. Small (Weinheim An Der Bergstrasse, Germany). 10: 1555-65. PMID 24376071 DOI: 10.1002/Smll.201302818 |
0.41 |
|
2014 |
Quddus EB, Wilson A, Webb RA, Koley G. Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature. Nanoscale. 6: 1166-72. PMID 24296526 DOI: 10.1039/C3Nr03991A |
0.772 |
|
2014 |
Brown G, Omar SU, Shetu S, Uddin A, Rana T, Song H, Sudarshan TS, Koley G, Chandrashekhar MVS. High gain bipolar photo-transistor operation in graphene/SiC schottky interfaces: The role of minority carriers 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 444-447. DOI: 10.1109/NANO.2014.6968181 |
0.591 |
|
2014 |
Uddin MA, Singh AK, Sudarshan TS, Chandrashekhar MVS, Koley G. Tunable graphene/Si chemi-diode H2 sensor: Comparison between Pd and Pt functionalization, and effect of illumination 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 554-557. DOI: 10.1109/NANO.2014.6968132 |
0.591 |
|
2014 |
Talukdar A, Koley G. Impact of biasing conditions on displacement transduction by III-nitride microcantilevers Ieee Electron Device Letters. 35: 1299-1301. DOI: 10.1109/Led.2014.2360866 |
0.375 |
|
2014 |
Jahangir I, Quddus EB, Koley G. III-V Nitride based triangular microcantilever heater for selective detection of organic vapors at low temperatures Device Research Conference - Conference Digest, Drc. 111-112. DOI: 10.1109/DRC.2014.6872322 |
0.774 |
|
2014 |
Sun Y, Liu J, Blom D, Koley G, Duan Z, Wang G, Li X. Atomic-scale imaging correlation on the deformation and sensing mechanisms of SnO2 nanowires Applied Physics Letters. 105. DOI: 10.1063/1.4904912 |
0.34 |
|
2014 |
Zhu Y, Koley G. On the modulation of oxygen sensitivity of In<inf>2</inf>O<inf>3</inf> thin films: Effects of moisture and dc bias Physica Status Solidi (a) Applications and Materials Science. 211: 2592-2600. DOI: 10.1002/Pssa.201431281 |
0.357 |
|
2013 |
Wilson A, Quddus EB, Koley G. Tunneling and sensing effects of high quality InN nanowires Conference Proceedings - Ieee Southeastcon. DOI: 10.1109/SECON.2013.6567379 |
0.8 |
|
2013 |
Shetu SS, Daas B, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688517 |
0.571 |
|
2013 |
Talukdar A, Qazi M, Koley G. Static and dynamic responses of GaN piezoresistive microcantilever with embedded AlGaN/GaN HFET for sensing applications Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688393 |
0.537 |
|
2013 |
Wilson A, Jahangir I, Quddus EB, Singh AK, Koley G. InN nanowires based multi-modal environmental sensors Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688187 |
0.796 |
|
2013 |
Liu X, Zhu Y, Nomani MW, Wen X, Hsia TY, Koley G. A highly sensitive pressure sensor using a Au-patterned polydimethylsiloxane membrane for biosensing applications Journal of Micromechanics and Microengineering. 23. DOI: 10.1088/0960-1317/23/2/025022 |
0.751 |
|
2013 |
Singh AK, Uddin MA, Tolson JT, Maire-Afeli H, Sbrockey N, Tompa GS, Spencer MG, Vogt T, Sudarshan TS, Koley G. Electrically tunable molecular doping of graphene Applied Physics Letters. 102. DOI: 10.1063/1.4789509 |
0.575 |
|
2012 |
Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Molecular gas adsorption induced carrier transport studies of epitaxial graphene using IR reflection spectroscopy Materials Science Forum. 717: 665-668. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.665 |
0.609 |
|
2012 |
Spencer M, Singh A, Uddin MA, Nomani MWK, Tompa G, Sbrockey N, Tolson J, Shields V, Hwang J, Koley G. Graphene on different substrates for sensing applications Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322236 |
0.491 |
|
2012 |
Talukdar A, Qazi M, Koley G. Highly sensitive III-V nitride based piezoresistive microcantilever using embedded AlGaN/GaN HFET as ultrasonic detector Device Research Conference - Conference Digest, Drc. 19-20. DOI: 10.1109/DRC.2012.6256983 |
0.542 |
|
2012 |
Talukdar A, Qazi M, Koley G. High frequency dynamic bending response of piezoresistive GaN microcantilevers Applied Physics Letters. 101. DOI: 10.1063/1.4772489 |
0.593 |
|
2012 |
Nomani MWK, Shields V, Tompa G, Sbrockey N, Spencer MG, Webb RA, Koley G. Correlated conductivity and work function changes in epitaxial graphene Applied Physics Letters. 100. DOI: 10.1063/1.3691628 |
0.556 |
|
2012 |
Quddus EB, Wilson A, Liu J, Cai Z, Veereddy D, Tao X, Li X, Webb RA, Koley G. Structural and elastic properties of InN nanowires Physica Status Solidi (a) Applications and Materials Science. 209: 718-723. DOI: 10.1002/Pssa.201127530 |
0.778 |
|
2011 |
Koley G, Cai Z, Quddus EB, Liu J, Qazi M, Webb RA. Growth direction modulation and diameter-dependent mobility in InN nanowires. Nanotechnology. 22: 295701. PMID 21673377 DOI: 10.1088/0957-4484/22/29/295701 |
0.792 |
|
2011 |
Nomani MWK, Singh A, Shields V, Spencer M, Tompa G, Sbrockey N, Koley G. Work function and conductivity changes due to molecular adsorption in epitaxial graphene on 6H-SiC Proceedings of the Ieee Conference On Nanotechnology. 1317-1321. DOI: 10.1109/NANO.2011.6144426 |
0.505 |
|
2011 |
Qazi M, Deroller N, Talukdar A, Koley G. III-V Nitride based piezoresistive microcantilever for sensing applications Applied Physics Letters. 99. DOI: 10.1063/1.3657467 |
0.595 |
|
2011 |
Nomani MWK, Kersey D, James J, Diwan D, Vogt T, Webb RA, Koley G. Highly sensitive and multidimensional detection of NO2 using In2O3 thin films Sensors and Actuators, B: Chemical. 160: 251-259. DOI: 10.1016/J.Snb.2011.07.044 |
0.352 |
|
2011 |
Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Méndez Torres A, Chandrashekhar MVS. Advance in molecular gas sensing studies using epitaxial graphene Transactions of the American Nuclear Society. 105: 260-261. |
0.546 |
|
2010 |
Qazi M, Nomani MWK, Chandrashekhar MVS, Shields VB, Spencer MG, Koley G. Molecular adsorption behavior of epitaxial graphene grown on 6H-SiC faces Applied Physics Express. 3. DOI: 10.1143/Apex.3.075101 |
0.749 |
|
2010 |
Bruckman MA, Liu J, Koley G, Li Y, Benicewicz B, Niu Z, Wang Q. Tobacco mosaic virus based thin film sensor for detection of volatile organic compounds Journal of Materials Chemistry. 20: 5715-5719. DOI: 10.1039/C0Jm00634C |
0.325 |
|
2010 |
Nomani MWK, Shishir R, Qazi M, Diwan D, Shields VB, Spencer MG, Tompa GS, Sbrockey NM, Koley G. Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC Sensors and Actuators, B: Chemical. 150: 301-307. DOI: 10.1016/J.Snb.2010.06.069 |
0.699 |
|
2009 |
Koley G, Liu J, Nomani MW, Yim M, Wen X, Hsia TY. Miniaturized implantable pressure and oxygen sensors based on polydimethylsiloxane thin films. Materials Science & Engineering. R, Reports : a Review Journal. 29: 685-690. PMID 20161216 DOI: 10.1016/J.Msec.2008.12.016 |
0.745 |
|
2009 |
Qazi M, Nomani MW, Chandrashekhar MVS, Koley G. NO2 sensitivity of wide area SiC and epitaxial graphene on SiC substrates 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378345 |
0.675 |
|
2009 |
Quddus EB, Cai Z, Koley G. Structural and electrical properties of InN nanowires grown by chemical vapor deposition 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378188 |
0.772 |
|
2009 |
Liu J, Cai Z, Quddus E, Koley G. Charge transport in InN nanowires investigated by scanning probe microscopy 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378182 |
0.458 |
|
2009 |
Liu J, Mandal KC, Koley G. Investigation of nanoscale electronic properties of CdZnTe crystals by scanning spreading resistance microscopy Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/4/045012 |
0.324 |
|
2009 |
Liu J, Cai Z, Koley G. Charge transport and trapping in InN nanowires investigated by scanning probe microscopy Journal of Applied Physics. 106. DOI: 10.1063/1.3273380 |
0.602 |
|
2009 |
Qazi M, Liu J, Chandrashekhar MVS, Koley G. Surface electronic property of SiC correlated with NO2 adsorption Journal of Applied Physics. 106. DOI: 10.1063/1.3251404 |
0.708 |
|
2008 |
Qazi M, Koley G. NO₂ Detection Using Microcantilever Based Potentiometry. Sensors (Basel, Switzerland). 8: 7144-7156. PMID 27873919 DOI: 10.3390/S8117144 |
0.607 |
|
2008 |
Qazi M, Koley G. NO2 detection using microcantilever based potentiometry Sensors. 8: 7144-7156. DOI: 10.3390/s8117144 |
0.563 |
|
2008 |
Cai Z, Garzon S, Webb RA, Koley G. Synthesis and Characterization of High Quality InN Nanowires and Nano-networks Materials Research Society Symposium Proceedings. 1058: 58-64. DOI: 10.1557/Proc-1058-Jj06-13 |
0.591 |
|
2008 |
Liu J, Mandal KC, Koley G. Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796253 |
0.314 |
|
2008 |
Koley G, Qazi M. Unique molecular identification using two-dimensional response Proceedings of Ieee Sensors. 823-826. DOI: 10.1109/ICSENS.2008.4716567 |
0.53 |
|
2008 |
Koley G, Cai Z. InN nanowire based sensors Proceedings of Ieee Sensors. 118-121. DOI: 10.1109/ICSENS.2008.4716397 |
0.587 |
|
2008 |
Qazi M, Vogt T, Koley G. Two-dimensional signatures for molecular identification Applied Physics Letters. 92. DOI: 10.1063/1.2897295 |
0.578 |
|
2008 |
Cai Z, Garzon S, Chandrashekhar MVS, Webb RA, Koley G. Synthesis and properties of high-quality InN nanowires and nanonetworks Journal of Electronic Materials. 37: 585-592. DOI: 10.1007/S11664-007-0353-8 |
0.712 |
|
2008 |
Koley G, Chandrashekhar MVS, Thomas CI, Spencer MG. Polarization in wide bandgap semiconductors and their characterization by scanning probe microscopy Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 265-305. DOI: 10.1007/978-0-387-68319-5_6 |
0.687 |
|
2008 |
Tao X, Liu J, Koley G, Li X. B/SiOx nanonecklace reinforced nanocomposites by unique mechanical interlocking mechanism Advanced Materials. 20: 4091-4096. DOI: 10.1002/Adma.200801549 |
0.333 |
|
2007 |
Niu Z, Liu J, Lee LA, Bruckman MA, Zhao D, Koley G, Wang Q. Biological templated synthesis of water-soluble conductive polymeric nanowires. Nano Letters. 7: 3729-33. PMID 18020388 DOI: 10.1021/Nl072134H |
0.306 |
|
2007 |
Cai Z, Garzon S, Webb RA, Koley G. Synthesis and Characterization of High Quality InN Nanowires and Nano-networks Mrs Proceedings. 1058. DOI: 10.1557/PROC-1058-JJ06-13 |
0.543 |
|
2007 |
Chandrashekhar MVS, Lu J, Spencer MG, Qazi M, Koley G. Large area nanocrystalline graphite films on SiC for gas sensing applications Proceedings of Ieee Sensors. 558-561. DOI: 10.1109/ICSENS.2007.4388459 |
0.689 |
|
2007 |
Qazi M, Koley G, Park S, Vogt T. Investigation of functionalization layers for NO2 detection Proceedings of Ieee Sensors. 209-212. DOI: 10.1109/ICSENS.2007.4388373 |
0.57 |
|
2007 |
Qazi M, Vogt T, Koley G. Trace gas detection using nanostructured graphite layers Applied Physics Letters. 91. DOI: 10.1063/1.2820387 |
0.6 |
|
2007 |
Qazi M, Koley G, Park S, Vogt T. NO2 detection by adsorption induced work function changes in In2O3 thin films Applied Physics Letters. 91. DOI: 10.1063/1.2760168 |
0.579 |
|
2007 |
Koley G, Qazi M, Lakshmanan L, Thundat T. Gas sensing using electrostatic force potentiometry Applied Physics Letters. 90. DOI: 10.1063/1.2731686 |
0.59 |
|
2007 |
Koley G, Liu J, Mandal KC. Investigation of CdZnTe crystal defects using scanning probe microscopy Applied Physics Letters. 90. DOI: 10.1063/1.2712496 |
0.309 |
|
2007 |
Koley G, Lakshmanan L, Wu H, Cha HY. Nanoscale surface characterization of GaN nanowires correlated with metal contact characteristics Physica Status Solidi (a) Applications and Materials Science. 204: 1123-1129. DOI: 10.1002/Pssa.200622516 |
0.715 |
|
2006 |
Koley G, Cai Z. Growth of gallium nitride nanowires and nanospirals Materials Research Society Symposium Proceedings. 963: 55-60. DOI: 10.1557/Proc-0963-Q10-17 |
0.555 |
|
2006 |
Koley G, Lakshmanan L. Investigation of cantilever resonance applied to potentiometric sensing Materials Research Society Symposium Proceedings. 951: 9-14. DOI: 10.1557/Proc-0951-E05-03 |
0.343 |
|
2006 |
Koley G, Lakshmanan L. Perturbation of charges in AlGaN/GaN heterostructures studied by nanoscale capacitance-voltage technique Materials Research Society Symposium Proceedings. 892: 405-410. DOI: 10.1557/Proc-0892-Ff17-01 |
0.372 |
|
2006 |
Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018 |
0.794 |
|
2006 |
Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/S11664-006-0118-9 |
0.764 |
|
2005 |
Koley G, Lakshmanan L, Tipirneni N, Gaevski M, Koudymov A, Simin G, Cha HY, Spencer MG, Khan A. Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L1348 |
0.693 |
|
2005 |
Koley G, Spencer MG. On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface Applied Physics Letters. 86. DOI: 10.1063/1.1850600 |
0.505 |
|
2004 |
Koley G, Cha HY, Hwang J, Schaff WJ, Eastman LF, Spencer MG. Perturbation of charges in AIGaN/GaN heterostructures by ultraviolet laser illumination Journal of Applied Physics. 96: 4253-4262. DOI: 10.1063/1.1794892 |
0.711 |
|
2004 |
Kubovic M, Kasu M, Kallfass I, Neuburger M, Aleksov A, Koley G, Spencer MG, Kohn E. Microwave performance evaluation of diamond surface channel FETs Diamond and Related Materials. 13: 802-807. DOI: 10.1016/J.Diamond.2003.11.089 |
0.536 |
|
2003 |
Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Passivation effect on channel recessed 4H-SiC MESFETs Materials Science Forum. 433: 749-752. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.749 |
0.679 |
|
2003 |
Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs Ieee Transactions On Electron Devices. 50: 1569-1574. DOI: 10.1109/Ted.2003.814982 |
0.777 |
|
2003 |
Koley G, Tilak V, Eastman LF, Spencer MG. Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination Ieee Transactions On Electron Devices. 50: 886-893. DOI: 10.1109/Ted.2003.812489 |
0.645 |
|
2003 |
Neuburger M, Daumiller I, Zimmermann T, Kunze M, Koley G, Spencer MG, Dadgar A, Krtschil A, Krost A, Kohn E. Surface stability of InGaN-channel based HFETs Electronics Letters. 39: 1614-1616. DOI: 10.1049/El:20030974 |
0.566 |
|
2003 |
Koley G, Kim H, Eastman LF, Spencer MG. Electrical bias stress related degradation of AlGaN/GaN HEMTs Electronics Letters. 39: 1217-1218. DOI: 10.1049/El:20030773 |
0.612 |
|
2003 |
Zhang AP, Rowland LB, Kaminsky EB, Tucker JB, Beaupre RA, Kretchmer JW, Garrett JL, Vertiatchikh A, Koley G, Cha HY, Allen AF, Cook J, Foppes J, Edward BJ. Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 32: 437-443. DOI: 10.1007/S11664-003-0174-3 |
0.371 |
|
2002 |
Wu H, Schaff WJ, Koley G, Furis M, Cartwright AN, Mkhoyan KA, Silcox J, Henderson W, Doolittle WA, Osinsky AV. Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Mrs Proceedings. 743: 375-380. DOI: 10.1557/Proc-743-L6.2 |
0.352 |
|
2002 |
Cha HY, Thomas CI, Koley G, Eastman LF, Spencer MG. The effect of channel recess and passivation on 4H-SiC MESFETs Materials Research Society Symposium - Proceedings. 742: 283-288. DOI: 10.1557/Proc-742-K5.19 |
0.739 |
|
2002 |
Cha H, Thomas CI, Koley G, Eastman LF, Spencer MG. The Effect of Channel Recess and Passivation on 4H-SiC MESFETs Mrs Proceedings. 742. DOI: 10.1557/PROC-742-K5.19 |
0.699 |
|
2002 |
Koley G, Cha HY, Thomas CI, Spencer MG. Laser-induced surface potential transients observed in III-nitride heterostructures Applied Physics Letters. 81: 2282-2284. DOI: 10.1063/1.1506416 |
0.749 |
|
2002 |
Koley G, Cha HY, Tilak V, Eastman LF, Spencer MG. Modulation of surface barrier in AlGaN/GaN heterostructures Physica Status Solidi (B) Basic Research. 234: 734-737. DOI: 10.1002/1521-3951(200212)234:3<734::Aid-Pssb734>3.0.Co;2-C |
0.732 |
|
2002 |
Koley G, Tilak V, Cha HY, Eastman LF, Spencer MG. Surface trapping effects observed in AlGAN/GaN HFETs and heterostructures Proceedings Ieee Lester Eastman Conference On High Performance Devices. 470-476. |
0.587 |
|
2002 |
Cha HY, Thomas CI, Koley G, Kim H, Eastman LF, Spencer MG. Channel Recessed 4H-SiC MESFETs with Ft of 14.5GHz and F max of 40GHz Proceedings Ieee Lester Eastman Conference On High Performance Devices. 75-82. |
0.35 |
|
2001 |
Koley G, Spencer MG. Characterization of GaN and Al0.35Ga0.65N/GaN heterostructures by scanning kelvin probe microscopy Materials Research Society Symposium Proceedings. 680: 90-95. DOI: 10.1557/Proc-680-E4.4 |
0.548 |
|
2001 |
Lu H, Schaff WJ, Hwang J, Wu H, Koley G, Eastman LF. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy Applied Physics Letters. 79: 1489-1491. DOI: 10.1063/1.1402649 |
0.518 |
|
2001 |
Koley G, Spencer MG, Bhangale HR. Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy Applied Physics Letters. 79: 545-547. DOI: 10.1063/1.1384004 |
0.521 |
|
2001 |
Koley G, Spencer MG. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy Journal of Applied Physics. 90: 337-344. DOI: 10.1063/1.1371941 |
0.569 |
|
2001 |
Koley G, Spencer MG. Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 2873-2875. DOI: 10.1063/1.1369390 |
0.539 |
|
2001 |
Shen Y, Jacobs DB, Malliaras GG, Koley G, Spencer MG, Ioannidis A. Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes Advanced Materials. 13: 1234. DOI: 10.1002/1521-4095(200108)13:16<1234::AID-ADMA1234>3.0.CO;2-R |
0.413 |
|
2000 |
Goldys EM, Godlewski M, Kaminski E, Piotrowska A, Koley G, Spencer MG, Eastman LF. Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2000: 539-542. DOI: 10.1109/COMMAD.2000.1023006 |
0.564 |
|
2000 |
Koley G, Smart J, Shealy JR, Spencer MG. Characterization of dislocations and suface potential in III-V nitride heterostructures Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 200-206. |
0.524 |
|
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