| Year |
Citation |
Score |
| 2016 |
Marcinkevičius S, Jain R, Shatalov M, Gaska R, Shur M. Scanning near-field optical microscopy of AlGaN epitaxial layers Proceedings of Spie. 9926: 992605. DOI: 10.1117/12.2236999 |
0.326 |
|
| 2016 |
Podlipskas, Aleksiejunas R, Kadys A, Mickevičius J, Jurkevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/14/145110 |
0.361 |
|
| 2016 |
Mickevičius J, Jurkevičius J, Kadys A, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells Aip Advances. 6. DOI: 10.1063/1.4947574 |
0.388 |
|
| 2015 |
Saxena T, Shur M, Nargelas S, Podlipskas Ž, Aleksiejūnas R, Tamulaitis G, Shatalov M, Yang J, Gaska R. Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content. Optics Express. 23: 19646-55. PMID 26367622 DOI: 10.1364/Oe.23.019646 |
0.388 |
|
| 2015 |
Shatalov M, Jain R, Dobrinsky A, Sun W, Bilenko Y, Yang J, Shur M, Gaska R. High-efficiency UV LEDs on sapphire Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2079874 |
0.348 |
|
| 2015 |
Mickevičius J, Jurkevičius J, Kadys A, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/27/275105 |
0.387 |
|
| 2015 |
Saxena T, Nargelas S, Mickevičius J, Kravcov O, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers Journal of Applied Physics. 118. DOI: 10.1063/1.4929499 |
0.395 |
|
| 2015 |
Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M. Novel AlInN/GaN integrated circuits operating up to 500 °C Solid-State Electronics. 113: 22-27. DOI: 10.1016/J.Sse.2015.05.007 |
0.353 |
|
| 2015 |
Mickevičius J, Podlipskas, Aleksiejūnas R, Kadys A, Jurkevičius J, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content Journal of Electronic Materials. DOI: 10.1007/S11664-015-4132-7 |
0.375 |
|
| 2015 |
Mickevičius J, Tamulaitis G, Jurkevičius J, Shur MS, Shatalov M, Yang J, Gaska R. Efficiency droop and carrier transport in AlGaN epilayers and heterostructures Physica Status Solidi (B) Basic Research. 252: 961-964. DOI: 10.1002/Pssb.201451542 |
0.365 |
|
| 2014 |
Mickevi?ius J, Jurkevi?ius J, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells. Optics Express. 22: A491-7. PMID 24922258 DOI: 10.1364/Oe.22.00A491 |
0.369 |
|
| 2014 |
Simin GS, Islam M, Gaevski M, Deng J, Gaska R, Shur MS. Low RC-constant perforated-channel HFET Ieee Electron Device Letters. 35: 449-451. DOI: 10.1109/Led.2014.2304726 |
0.346 |
|
| 2014 |
Shatalov M, Sun W, Jain R, Lunev A, Hu X, Dobrinsky A, Bilenko Y, Yang J, Garrett GA, Rodak LE, Wraback M, Shur M, Gaska R. High power AlGaN ultraviolet light emitters Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/084007 |
0.366 |
|
| 2014 |
Marcinkevičius S, Jain R, Shatalov M, Yang J, Shur M, Gaska R. High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy Applied Physics Letters. 105. DOI: 10.1063/1.4904710 |
0.348 |
|
| 2014 |
Tamulaitis G, Mickevičius J, Jurkevičius J, Shur MS, Shatalov M, Yang J, Gaska R. Photoluminescence efficiency in AlGaN quantum wells Physica B: Condensed Matter. 453: 40-42. DOI: 10.1016/J.Physb.2013.12.019 |
0.365 |
|
| 2014 |
Gaevski M, Deng J, Gaska R, Shur M, Simin G. GaN microwave varactors with insulated electrodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 853-856. DOI: 10.1002/Pssc.201300667 |
0.372 |
|
| 2013 |
Jahan F, Yang YH, Gaevski M, Deng J, Gaska R, Shur M, Simin G. 2-to 20-GHz switch using III-nitride capacitively coupled contact varactors Ieee Electron Device Letters. 34: 208-210. DOI: 10.1109/Led.2012.2231396 |
0.364 |
|
| 2013 |
Simin G, Jahan F, Yang J, Gaevski M, Hu X, Deng J, Gaska R, Shur M. III-nitride microwave control devices and ICs Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074008 |
0.372 |
|
| 2013 |
Saxena T, Tamulaitis G, Shatalov M, Yang J, Gaska R, Shur MS. Low threshold for optical damage in AlGaN epilayers and heterostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4834520 |
0.357 |
|
| 2013 |
Mickevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Correlation between carrier localization and efficiency droop in AlGaN epilayers Applied Physics Letters. 103. DOI: 10.1063/1.4813259 |
0.36 |
|
| 2013 |
Marcinkevičius S, Liuolia V, Billingsley D, Shatalov M, Yang J, Gaska R, Shur MS. Carrier dynamics and localization in AlInN/GaN heterostructures Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 853-856. DOI: 10.1002/Pssc.201200599 |
0.371 |
|
| 2012 |
Mickevi?ius J, Jurkevi?ius J, Shur MS, Yang J, Gaska R, Tamulaitis G. Photoluminescence efficiency droop and stimulated recombination in GaN epilayers. Optics Express. 20: 25195-200. PMID 23187336 DOI: 10.1364/Oe.20.025195 |
0.308 |
|
| 2012 |
Mitin V, Ramaswamy R, Wang K, Choi JK, Pakmehr M, Muraviev A, Shur M, Gaska R, Pogrebnyak V, Sergeev A. THz detectors based on heating of two-dimensional electron gas in disordered nitride heterostructures Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919267 |
0.328 |
|
| 2012 |
Moe CG, Garrett GA, Rotella P, Shen H, Wraback M, Shatalov M, Sun W, Deng J, Hu X, Bilenko Y, Yang J, Gaska R. Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4772506 |
0.359 |
|
| 2012 |
Marcinkevičius S, Liuolia V, Billingsley D, Shatalov M, Yang J, Gaska R, Shur MS. Transient photoreflectance of AlInN/GaN heterostructures Aip Advances. 2. DOI: 10.1063/1.4768670 |
0.317 |
|
| 2012 |
Mickevičius J, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Internal quantum efficiency in AlGaN with strong carrier localization Applied Physics Letters. 101. DOI: 10.1063/1.4767657 |
0.379 |
|
| 2012 |
Mickevičius J, Jurkevičius J, Kazlauskas K, Žukauskas A, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Stimulated emission due to localized and delocalized carriers in Al 0.35Ga 0.65N/Al 0.49Ga 0.51N quantum wells Applied Physics Letters. 101. DOI: 10.1063/1.4738791 |
0.38 |
|
| 2012 |
Liuolia V, Marcinkevičius S, Billingsley D, Shatalov M, Yang J, Gaska R, Shur MS. Photoexcited carrier dynamics in AlInN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4729033 |
0.395 |
|
| 2012 |
Mickevičius J, Jurkevičius J, Kazlauskas K, Žukauskas A, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R. Stimulated emission in AlGaN/AlGaN quantum wells with different Al content Applied Physics Letters. 100. DOI: 10.1063/1.3688051 |
0.333 |
|
| 2012 |
Jahan F, Gaevski M, Deng J, Gaska R, Shur M, Simin G. RF power limiter using capacitively-coupled contacts III-nitride varactor Electronics Letters. 48: 1480-1481. DOI: 10.1049/El.2012.3428 |
0.387 |
|
| 2012 |
Pinos A, Marcinkevičius S, Liuolia V, Yang J, Gaska R, Shur MS. Scanning near-field optical spectroscopy of AlGaN epitaxial layers Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1617-1620. DOI: 10.1002/Pssc.201100570 |
0.35 |
|
| 2012 |
Tamulaitis G, Mickevičius J, Dobrovolskas D, Kuokštis E, Shur MS, Shatalov M, Yang J, Gaska R. Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1677-1679. DOI: 10.1002/Pssc.201100550 |
0.343 |
|
| 2011 |
Ramaswamy R, Wang K, Stier A, Muraviev A, Strasser G, Markelz A, Shur M, Gaska R, Sergeev A, Mitin V. 2DEG GaN hot electron microbolometers and quantum cascade lasers for THz heterodyne sensing Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.883329 |
0.401 |
|
| 2011 |
Sattu AK, Yang J, Gaska R, Khan MB, Shur M, Simin G. Small- and large-signal performance of III-nitride RF switches with hybrid fast/slow gate design Ieee Microwave and Wireless Components Letters. 21: 305-307. DOI: 10.1109/Lmwc.2011.2138686 |
0.356 |
|
| 2011 |
Sattu A, Deng J, Billingsley D, Yang J, Shur M, Gaska R, Simin G. Enhanced power and breakdown in III-N RF switches with a slow gate Ieee Electron Device Letters. 32: 749-751. DOI: 10.1109/Led.2011.2126557 |
0.365 |
|
| 2011 |
Moe CG, Garrett GA, Shen H, Wraback M, Shatalov M, Hu X, Bilenko Y, Yang J, Sun W, Gaska R. Temperature dependent electroluminescence measurement of AlGaN-based ultraviolet light-emitting diodes 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135206 |
0.304 |
|
| 2011 |
Dobrovolskas D, Mickevičius J, Kuokštis E, Tamulaitis G, Shur M, Shatalov M, Yang J, Gaska R. Confocal spectroscopy of InGaN LED structures Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/13/135104 |
0.365 |
|
| 2011 |
Pinos A, Liuolia V, Marcinkevičius S, Yang J, Gaska R, Shur MS. Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy Journal of Applied Physics. 109. DOI: 10.1063/1.3594239 |
0.341 |
|
| 2011 |
Chivukula V, Čiplys D, Jain R, Yang J, Gaska R, Shur M. Acoustic plate mode propagation and interaction with ultraviolet light in periodic AIN-on-sapphire structure Applied Physics Letters. 98. DOI: 10.1063/1.3557507 |
0.317 |
|
| 2011 |
Sattu A, Billingsley D, Deng J, Yang J, Simin G, Shur M, Gaska R. Low-loss AlInN/GaN microwave switch Electronics Letters. 47: 863-865. DOI: 10.1049/El.2011.1010 |
0.368 |
|
| 2011 |
Billingsley D, Yang J, Gaska R, Shur M. Migration-enhanced metalorganic chemical vapor deposition of Al xIn1-xN/GaN heterostructures (x>0.75) on c-plane sapphire Journal of Crystal Growth. 327: 98-101. DOI: 10.1016/J.Jcrysgro.2011.06.015 |
0.348 |
|
| 2011 |
Tamulaitis G, Mickevičius J, Kazlauskas K, Žukauskas A, Shur MS, Yang J, Gaska R. Efficiency droop in high-Al-content AlGaN/AlGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2130-2132. DOI: 10.1002/Pssc.201000889 |
0.37 |
|
| 2011 |
Chabak KD, Walker DE, Trejo M, Crespo A, Kossler M, Gillespie JK, Gilbert R, Poling B, Tetlak S, Fitch RC, Via GD, Yang J, Gaska R. Performance of strained ALInN/Aln/GaN hemts with Si3N4 and ultra-thin Al2O3 passivation 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011. |
0.302 |
|
| 2010 |
Shatalov M, Sun W, Bilenko Y, Sattu A, Hu X, Deng J, Yang J, Shur M, Moe C, Wraback M, Gaska R. Large chip high power deep ultraviolet light-emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.062101 |
0.402 |
|
| 2010 |
Sattu A, Yang J, Shur M, Gaska R, Simin G. AlGaN/GaN microwave switch with hybrid slow and fast gate design Ieee Electron Device Letters. 31: 1389-1391. DOI: 10.1109/Led.2010.2073676 |
0.37 |
|
| 2010 |
Pinos A, Marcinkevičius S, Yang J, Gaska R, Shatalov M, Shur MS. Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes Journal of Applied Physics. 108. DOI: 10.1063/1.3506697 |
0.403 |
|
| 2010 |
Moe CG, Reed ML, Garrett GA, Sampath AV, Alexander T, Shen H, Wraback M, Bilenko Y, Shatalov M, Yang J, Sun W, Deng J, Gaska R. Current-induced degradation of high performance deep ultraviolet light emitting diodes Applied Physics Letters. 96. DOI: 10.1063/1.3435485 |
0.403 |
|
| 2010 |
Chivukula V, Ciplys D, Sereika A, Shur M, Yang J, Gaska R. AlGaN based highly sensitive radio-frequency UV sensor Applied Physics Letters. 96. DOI: 10.1063/1.3405692 |
0.354 |
|
| 2010 |
Sun W, Shatalov M, Deng J, Hu X, Yang J, Lunev A, Bilenko Y, Shur M, Gaska R. Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power Applied Physics Letters. 96. DOI: 10.1063/1.3302466 |
0.425 |
|
| 2010 |
Muravjov AV, Veksler DB, Popov VV, Polischuk OV, Pala N, Hu X, Gaska R, Saxena H, Peale RE, Shur MS. Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures Applied Physics Letters. 96. DOI: 10.1063/1.3292019 |
0.608 |
|
| 2010 |
Meneghini M, Barbisan D, Bilenko Y, Shatalov M, Yang J, Gaska R, Meneghesso G, Zanoni E. Defect-related degradation of Deep-UV-LEDs Microelectronics Reliability. 50: 1538-1542. DOI: 10.1016/J.Microrel.2010.07.089 |
0.345 |
|
| 2010 |
Garrett GA, Sampath AV, Shen H, Wraback M, Sun W, Shatalov M, Hu X, Yang J, Bilenko Y, Lunev A, Shur MS, Gaska R, Grandusky JR, Schowalter LJ. Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2390-2393. DOI: 10.1002/Pssc.200983906 |
0.368 |
|
| 2010 |
Deng J, Yang J, Hu X, Gaska R, Khan B, Simin G, Shur M. Insertion loss and linearity of III-nitride microwave switches Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2423-2425. DOI: 10.1002/Pssc.200983898 |
0.363 |
|
| 2010 |
Tamulaitis G, Mickevičius J, Dobrovolskas D, Kuokštis E, Shur M, Shatalov M, Yang J, Gaska R. Spatially-resolved photoluminescence study of high indium content InGaN LED structures Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1869-1871. DOI: 10.1002/Pssc.200983477 |
0.363 |
|
| 2010 |
Mickevičius J, Kuokštis E, Liuolia V, Tamulaitis G, Shur MS, Yang J, Gaska R. Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states Physica Status Solidi (a) Applications and Materials Science. 207: 423-427. DOI: 10.1002/Pssa.200925227 |
0.36 |
|
| 2009 |
Chivukula VS, Ciplys D, Liu K, Shur MS, Gaska R. Surface acoustic wave propagation in GaN-on-sapphire under pulsed sub-band ultraviolet illumination International Journal of High Speed Electronics and Systems. 19: 77-83. DOI: 10.1142/S0129156409006102 |
0.326 |
|
| 2009 |
Simin G, Shur MS, Gaska R. 5-Terminal THz GaN based transistor with field- and space-charge control electrodes International Journal of High Speed Electronics and Systems. 19: 7-14. DOI: 10.1142/S0129156409006047 |
0.395 |
|
| 2009 |
Peale RE, Saxena H, Buchwald WR, Aizin G, Muravjov AV, Veksler DB, Pala N, Hu X, Gaska R, Shur MS. Grating-gate tunable plasmon absorption in InP and GaN based HEMTs Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.826187 |
0.603 |
|
| 2009 |
Muravjov AV, Veksler DB, Hu X, Gaska R, Pala N, Saxena H, Peale RE, Shur MS. Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures Proceedings of Spie - the International Society For Optical Engineering. 7311. DOI: 10.1117/12.818726 |
0.577 |
|
| 2009 |
Simin G, Khan B, Wang J, Koudymov A, Gaevski M, Jain R, Yang J, Hu X, Gaska R, Shur M. Multigate GaN RF switches with capacitively coupled contacts Ieee Electron Device Letters. 30: 895-897. DOI: 10.1109/Led.2009.2025675 |
0.336 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480. DOI: 10.1109/Led.2009.2017284 |
0.592 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. RF transmission line method for wide-bandgap heterostructures Ieee Electron Device Letters. 30: 433-435. DOI: 10.1109/Led.2009.2016358 |
0.554 |
|
| 2009 |
Muravjov AV, Veksler DB, Popov VV, Shur MS, Pala N, Hu X, Gaska R, Saxena H, Peale RE. Terahertz plasmons in grating-gate algan/gan hemts Cleo/Europe - Eqec 2009 - European Conference On Lasers and Electro-Optics and the European Quantum Electronics Conference. DOI: 10.1109/CLEOE-EQEC.2009.5191761 |
0.564 |
|
| 2009 |
Pinos A, Marcinkevičius S, Yang J, Bilenko Y, Shatalov M, Gaska R, Shur MS. Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3262964 |
0.358 |
|
| 2009 |
Liuolia V, Marcinkevičius S, Pinos A, Gaska R, Shur MS. Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3222972 |
0.355 |
|
| 2009 |
Shatalov M, Yang J, Sun W, Kennedy R, Gaska R, Liu K, Shur M, Tamulaitis G. Efficiency of light emission in high aluminum content AlGaN quantum wells Journal of Applied Physics. 105. DOI: 10.1063/1.3103321 |
0.395 |
|
| 2009 |
Simin G, Koudymov A, Yang Z, Hu X, Yang J, Shur M, Gaska R. Cryogenic RF switch using III-nitride MOSHFETs Electronics Letters. 45: 207-208. DOI: 10.1049/El:20092562 |
0.354 |
|
| 2009 |
Čiplys D, Chivukula VS, Sereika A, Rimeika R, Shur MS, Hu X, Gaska R. Wireless UV sensor based on photocapacitive effect in GaN Electronics Letters. 45: 653-654. DOI: 10.1049/El.2009.0324 |
0.32 |
|
| 2009 |
Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R. Maximum powers of low-loss series-shunt FET RF switches Solid-State Electronics. 53: 117-119. DOI: 10.1016/J.Sse.2008.11.009 |
0.32 |
|
| 2009 |
Shatalov M, Bilenko YU, Gaska R, Rumyantsev SL, Shur M. Reliability of deep UV LEDs Optics Infobase Conference Papers. |
0.301 |
|
| 2008 |
Mickevicius J, Tamulaitis G, Kuokstis E, Shur MS, Yang J, Gaska R. Influence of electric field and carrier localization on carrier dynamics in AlGaN quantum wells Acta Physica Polonica A. 114: 1247-1252. DOI: 10.12693/Aphyspola.114.1247 |
0.394 |
|
| 2008 |
Mickevičius J, Vitta P, Tamulaitis G, Žukauskas A, Shur MS, Zhang J, Yang J, Gaska R. Luminescence decay kinetics in GaN studied by frequency domain measurements Acta Physica Polonica A. 113: 833-837. DOI: 10.12693/Aphyspola.113.833 |
0.364 |
|
| 2008 |
Reed ML, Garrett GA, Sampath AV, Shen PH, Collins CJ, Wraback M, Zhang J, Hu X, Deng J, Lunev A, Bilenko Y, Katona T, Gaska R. Progress in high efficiency UV LED research for reagentless bioagent detection and water purification International Journal of High Speed Electronics and Systems. 18: 179-185. DOI: 10.1142/S0129156408005254 |
0.364 |
|
| 2008 |
Yang Z, Wang J, Hu X, Yang J, Simin G, Shur M, Gaska R. Current crowding in high performance low-loss HFET RF switches Ieee Electron Device Letters. 29: 15-17. DOI: 10.1109/Led.2007.911621 |
0.374 |
|
| 2008 |
Pinos A, Marcinkevičius S, Liu K, Shur MS, Yang J, Shatalov M, Gaska R. Carrier lifetimes in AlGaN quantum wells: Electric field and excitonic effects Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/15/155116 |
0.409 |
|
| 2008 |
Jain R, Sun W, Yang J, Shatalov M, Hu X, Sattu A, Lunev A, Deng J, Shturm I, Bilenko Y, Gaska R, Shur MS. Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2969402 |
0.386 |
|
| 2008 |
Pinos A, Marcinkevičius S, Liu K, Shur MS, Kuokštis E, Tamulaitis G, Gaska R, Yang J, Sun W. Screening dynamics of intrinsic electric field in AlGaN quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2857467 |
0.356 |
|
| 2008 |
Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G. Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Solid-State Electronics. 52: 1217-1220. DOI: 10.1016/J.Sse.2008.05.010 |
0.596 |
|
| 2008 |
Mickevicius J, Tamulaitis G, Vitta P, Zukauskas A, Shur MS, Zhang J, Yang J, Gaska R. Carrier dynamics in GaN at extremely low excited carrier densities Solid State Communications. 145: 312-315. DOI: 10.1016/J.Ssc.2007.10.038 |
0.39 |
|
| 2008 |
Mitchel WC, Elhamri S, Landis G, Gaska R, Schujman SB, Schowalter LJ. Electrical characterization of AlGaN/GaN on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1550-1552. DOI: 10.1002/Pssc.200778470 |
0.4 |
|
| 2008 |
Tamulaitis G, Mickevičius J, Kuokštis E, Liu K, Shur MS, Zhang JP, Gaska R. Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2096-2098. DOI: 10.1002/Pssc.200778448 |
0.408 |
|
| 2007 |
Deng J, Bilenko Y, Lunev A, Hu X, Katona TM, Zhang J, Shur MS, Gaska R. 247 nm ultra-violet light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L263-L264. DOI: 10.1143/Jjap.46.L263 |
0.434 |
|
| 2007 |
Pala N, Veksler D, Muravjov A, Stillman W, Gaska R, Shur MS. Resonant detection and modulation of terahertz radiation by 2DEG plasmons in GaN grating-gate structures Proceedings of Ieee Sensors. 570-572. DOI: 10.1109/ICSENS.2007.4388462 |
0.54 |
|
| 2007 |
Mickevičius J, Tamulaitis G, Kuokštis E, Liu K, Shur MS, Zhang JP, Gaska R. Well-width-dependent carrier lifetime in AIGaN/AIGaN quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2717145 |
0.399 |
|
| 2007 |
Marcinkevičius S, Pinos A, Liu K, Veksler D, Shur MS, Zhang J, Gaska R. Intrinsic electric fields in AlGaN quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2679864 |
0.34 |
|
| 2007 |
Tokranov V, Rumyantsev SL, Shur MS, Gaska R, Oktyabrsky S, Jain R, Pala N. HfO2/AIGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam Physica Status Solidi - Rapid Research Letters. 1: 199-201. DOI: 10.1002/Pssr.200701136 |
0.58 |
|
| 2007 |
Koudymov A, Shur MS, Simin G, Gaska R. Current collapse and reliability of III-N heterostructure field effect transistors Physica Status Solidi - Rapid Research Letters. 1: 116-118. DOI: 10.1002/Pssr.200701047 |
0.348 |
|
| 2006 |
Tamulaitis G, Mickevičius J, Vitta P, Žukauskas A, Shur MS, Liu K, Fareed Q, Zhang JP, Gaska R. Carrier lifetimes in GaN revealed by studying photoluminescence decay in time and frequency domains Ecs Transactions. 3: 307-314. DOI: 10.1149/1.2357219 |
0.306 |
|
| 2006 |
Simin G, Khan MA, Shur MS, Gaska R. High-power switching using III-Nitride metal-oxide-semiconductor heterostructures International Journal of High Speed Electronics and Systems. 16: 455-468. DOI: 10.1142/S0129156406003783 |
0.363 |
|
| 2006 |
Veksler D, Aniel F, Rumyantsev S, Shur MS, Pala N, Hu X, Fareed RSQ, Gaska R. GaN Heterodimensional Schottky diode for THz detection Proceedings of Ieee Sensors. 323-326. DOI: 10.1109/ICSENS.2007.355471 |
0.519 |
|
| 2006 |
Sawyer S, Rumyantsev SL, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Current and optical noise of GaN/AlGaN light emitting diodes Journal of Applied Physics. 100. DOI: 10.1063/1.2204355 |
0.609 |
|
| 2006 |
Mickevičius J, Tamulaitis G, Shur MS, Fareed Q, Zhang JP, Gaska R. Saturated gain in GaN epilayers studied by variable stripe length technique Journal of Applied Physics. 99. DOI: 10.1063/1.2196111 |
0.353 |
|
| 2006 |
El Fatimy A, Boubanga Tombet S, Teppe F, Knap W, Veksler DB, Rumyantsev S, Shur MS, Pala N, Gaska R, Fareed Q, Hu X, Seliuta D, Valusis G, Gaquiere C, Theron D, et al. Terahertz detection by GaN/AlGaN transistors Electronics Letters. 42: 1342-1344. DOI: 10.1049/El:20062452 |
0.598 |
|
| 2006 |
Ciplys D, Shur MS, Rimeika R, Sinius J, Gaska R, Bilenko Y, Fareed Q. UV-LED controlled GaN-based SAW phase shifter Electronics Letters. 42: 1254-1255. DOI: 10.1049/El:20062028 |
0.325 |
|
| 2006 |
Tamulaitis G, Mickevičius J, Vitta P, Žukauskas A, Shur MS, Fareed Q, Gaska R. Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers Superlattices and Microstructures. 40: 274-278. DOI: 10.1016/J.Spmi.2006.07.001 |
0.392 |
|
| 2006 |
Jain RB, Gao Y, Zhang J, Fareed RSQ, Gaska R, Li J, Arjunan A, Kuokstis E, Yang J, Khan MA. Growth of AlN films and their characterization Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1491-1494. DOI: 10.1002/Pssc.200565371 |
0.311 |
|
| 2006 |
Tamulaitis G, Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R. Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVD™ Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1923-1926. DOI: 10.1002/Pssc.200565335 |
0.336 |
|
| 2006 |
Tamulaitis G, Kazlauskas K, Žukauskas A, Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R. Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2099-2102. DOI: 10.1002/Pssc.200565334 |
0.364 |
|
| 2006 |
Ciplys D, Shur MS, Sereika A, Rimeika R, Gaska R, Fareed Q, Zhang J, Hu X, Lunev A, Bilenko Y. Deep-UV LED controlled AlGaN-based SAW oscillator Physica Status Solidi (a) Applications and Materials Science. 203: 1834-1838. DOI: 10.1002/Pssa.200565218 |
0.365 |
|
| 2005 |
Braga N, Mickevicius R, Fichtner W, Gaska R, Shur MS, Simin G, Khan MA. Simulation of AlGaN/GaN Heterostructure Field Effect Transistors The Japan Society of Applied Physics. 2005: 1054-1055. DOI: 10.7567/Ssdm.2005.I-7-1 |
0.326 |
|
| 2005 |
Bilenko Y, Lunev A, Hu X, Deng J, Katona TM, Zhang J, Gaska R, Shur MS, Sun W, Adivarahan V, Shatalov M, Khan A. 10 Milliwatt pulse operation of 265 nm AlGaN light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 44: L98-L100. DOI: 10.1143/Jjap.44.L98 |
0.363 |
|
| 2005 |
Rumyantsev SL, Sawyer S, Pala N, Shur MS, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low frequency noise of light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5844: 75-85. DOI: 10.1117/12.608559 |
0.561 |
|
| 2005 |
Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R, Tamulaitis G. Time-resolved experimental study of carrier lifetime in GaN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146061 |
0.386 |
|
| 2005 |
Kazlauskas K, Žukauskas A, Tamulaitis G, Mickevičius J, Shur MS, Fareed RSQ, Zhang JP, Gaska R. Exciton hopping and nonradiative decay in AlGaN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112169 |
0.385 |
|
| 2005 |
Vita P, Kurilčik N, Juršenas S, Žukauskas A, Lunev A, Bilenko Y, Zhang J, Hu X, Deng J, Katona T, Gaska R. Deep-ultraviolet light-emitting diodes for frequency domain measurements of fluorescence lifetime in basic biofluorophores Applied Physics Letters. 87. DOI: 10.1063/1.2031934 |
0.379 |
|
| 2005 |
Saygi S, Koudymov A, Adivarahan V, Yang J, Simin G, Khan MA, Deng J, Gaska R, Shur MS. Real-space electron transfer in III-nitride metal-oxide-semiconductor- heterojunction structures Applied Physics Letters. 87. DOI: 10.1063/1.2001745 |
0.361 |
|
| 2005 |
Rumyantsev SL, Sawyer S, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low-frequency noise of GaN-based ultraviolet light-emitting diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1928310 |
0.6 |
|
| 2005 |
Fareed RSQ, Hu X, Tarakji A, Deng J, Gaska R, Shur M, Khan MA. High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors Applied Physics Letters. 86: 143512. DOI: 10.1063/1.1886902 |
0.413 |
|
| 2005 |
Mickevičius J, Aleksiejūnas R, Shur MS, Sakalauskas S, Tamulaitis G, Fareed Q, Gaska R. Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers Applied Physics Letters. 86: 41910. DOI: 10.1063/1.1857090 |
0.352 |
|
| 2005 |
Pala N, Teppe F, Veksler D, Deng Y, Shur MS, Gaska R. Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs Electronics Letters. 41: 447-449. DOI: 10.1049/El:20058182 |
0.597 |
|
| 2005 |
Jain RB, Fareed RSQ, Zhang J, Gaska R, Kuokstis E, Yang J, Maruska HP, Khan MA, Mickevicius J, Tamulaitis G, Shur MS. Growth of high resistance thick GaN templates by HVPE Physica Status Solidi C: Conferences. 2: 2091-2094. DOI: 10.1002/Pssc.200461545 |
0.317 |
|
| 2005 |
Fareed RSQ, Zhang JP, Gaska R, Tamulaitis G, Mickevicius J, Aleksiejunas R, Shur MS, Khan MA. Migration enhanced MOCVD (MEMOCVD™) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate Physica Status Solidi C: Conferences. 2: 2095-2098. DOI: 10.1002/Pssc.200461531 |
0.365 |
|
| 2005 |
Shatalov M, Wu S, Adivarahan V, Sun WH, Chitnis A, Yang J, Bilenko Y, Gaska R, Khan MA. White light generation using 280 nm light emitting diode pumps Physica Status Solidi C: Conferences. 2: 2832-2835. DOI: 10.1002/Pssc.200461524 |
0.375 |
|
| 2005 |
Jarasiunas K, Aleksiejünas R, Malinauskas T, Sudzius M, Miasojedovas S, Jursenas S, Zukauskas A, Gaska R, Zhang J, Shur MS, Yang JW, Kuokstis E, Khan MA. Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures Physica Status Solidi (a). 202: 820-823. DOI: 10.1002/Pssa.200461351 |
0.354 |
|
| 2005 |
Dyakonova N, Rumyantsev SL, Shur MS, Meziani Y, Pascal F, Hoffmann A, Fareed Q, Hu X, Bilenko Y, Gaska R, Knap W. High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors Physica Status Solidi (a). 202: 677-679. DOI: 10.1002/Pssa.200460472 |
0.358 |
|
| 2005 |
Mickevičius J, Aleksiejūnas R, Shur MS, Tamulaitis G, Fareed RSQ, Zhang JP, Gaska R, Khan MA. Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers Physica Status Solidi (a). 202: 126-130. DOI: 10.1002/Pssa.200406903 |
0.371 |
|
| 2005 |
Sawyer S, Rumyantsev SL, Pala N, Shur MS, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Optical and current noise of GaN based light emitting diodes 2005 International Semiconductor Device Research Symposium. 2005: 89-90. |
0.541 |
|
| 2004 |
Simin G, Khan MA, Shur MS, Gaska R. Insulated Gate Iii-N Heterostructure Field-Effect Transistors International Journal of High Speed Electronics and Systems. 14: 197-224. DOI: 10.1142/S0129156404002302 |
0.461 |
|
| 2004 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Gaska R, Khan MA, Simin G. Generation-recombination noise in GaN-based devices International Journal of High Speed Electronics and Systems. 14: 175-195. DOI: 10.1142/S0129156404002296 |
0.616 |
|
| 2004 |
Sawyer S, Rumyantsev SL, Pala N, Shur MS, Bilenko Y, Gaska R, Kosterin PV, Salzberg BM. Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes International Journal of High Speed Electronics and Systems. 14: 702-707. DOI: 10.1109/Lechpd.2004.1549675 |
0.602 |
|
| 2004 |
Vitta P, Žukauskas A, Gaska R, Shur MS. White Complementary Solid-State Lamp Leukos. 1: 59-66. DOI: 10.1080/15502724.2004.10732005 |
0.308 |
|
| 2004 |
Zhang JP, Hu X, Bilenko Y, Deng J, Lunev A, Shur MS, Gaska R, Shatalov M, Yang JW, Khan MA. AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA Applied Physics Letters. 85: 5532-5534. DOI: 10.1063/1.1831557 |
0.368 |
|
| 2004 |
Braga N, Mickevicius R, Gaska R, Shur MS, Khan MA, Simin G. Simulation of gate lag and current collapse in gallium nitride field-effect transistors Applied Physics Letters. 85: 4780-4782. DOI: 10.1063/1.1823018 |
0.364 |
|
| 2004 |
Bu G, Shur MS, Čiplys D, Rimeika R, Gaska R, Fareed Q. Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers Applied Physics Letters. 85: 2157-2159. DOI: 10.1063/1.1792796 |
0.319 |
|
| 2004 |
Rumyantsev SL, Shur MS, Dyakonova N, Knap W, Meziani Y, Pascal F, Hoffman A, Hu X, Fareed Q, Bilenko Y, Gaska R. 1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K Journal of Applied Physics. 96: 3845-3847. DOI: 10.1063/1.1787911 |
0.36 |
|
| 2004 |
Tamulaitis G, Yilmaz I, Shur MS, Fareed Q, Gaska R, Khan MA. Photoluminescence of AlGaN grown on bulk AlN substrates Applied Physics Letters. 85: 206-208. DOI: 10.1063/1.1771804 |
0.431 |
|
| 2004 |
Adivarahan V, Wu S, Zhang JP, Chitnis A, Shatalov M, Mandavilli V, Gaska R, Khan MA. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes Applied Physics Letters. 84: 4762-4764. DOI: 10.1063/1.1756202 |
0.4 |
|
| 2004 |
Braga N, Mickevicius R, Gaska R, Hu X, Shur MS, Khan MA, Simin G, Yang J. Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors Journal of Applied Physics. 95: 6409-6413. DOI: 10.1063/1.1719262 |
0.351 |
|
| 2004 |
Fareed RSQ, Jain R, Gaska R, Shur MS, Wu J, Walukiewicz W, Khan MA. High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition Applied Physics Letters. 84: 1892-1894. DOI: 10.1063/1.1686889 |
0.395 |
|
| 2004 |
Tamulaitis G, Yilmaz I, Shur MS, Anderson T, Gaska R. Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates Applied Physics Letters. 84: 335-337. DOI: 10.1063/1.1641172 |
0.339 |
|
| 2004 |
Deng Y, Kersting R, Xu J, Ascazubi R, Zhang XC, Shur MS, Gaska R, Simin GS, Asif Khan M, Ryzhii V. Millimeter wave emission from GaN high electron mobility transistor Applied Physics Letters. 84: 70-72. DOI: 10.1063/1.1638625 |
0.338 |
|
| 2004 |
Pala N, Rumyantsev SL, Sinius J, Talapatra S, Shur MS, Gaska R. CuS thin films on flexible substrates Electronics Letters. 40: 273-274. DOI: 10.1049/El:20040192 |
0.513 |
|
| 2003 |
Pala N, Rumyantsev SL, Shur MS, Levinshtein ME, Asif Khan M, Simin G, Gaska R. Generation-recombination noise in GaN and GaN-based devices Proceedings of Spie - the International Society For Optical Engineering. 5113: 217-231. DOI: 10.1117/12.488468 |
0.592 |
|
| 2003 |
Khan MA, Simin G, Yang J, Zhang J, Koudymov A, Shur MS, Gaska R, Hu X, Tarakji A. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications Ieee Transactions On Microwave Theory and Techniques. 51: 624-633. DOI: 10.1109/Tmtt.2002.807681 |
0.432 |
|
| 2003 |
Koudymov A, Simin G, Khan MA, Tarakji A, Gaska R, Shur MS. Dynamic Current-Voltage Characteristics of III-N HFETs Ieee Electron Device Letters. 24: 680-682. DOI: 10.1109/Led.2003.818889 |
0.348 |
|
| 2003 |
Adivarahan V, Gaevski M, Sun WH, Fatima H, Koudymov A, Saygi S, Simin G, Yang J, Khan MA, Tarakji A, Shur MS, Gaska R. Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Ieee Electron Device Letters. 24: 541-543. DOI: 10.1109/Led.2003.816574 |
0.419 |
|
| 2003 |
Tarakji A, Fatima H, Hu X, Zhang J-, Simin G, Khan MA, Shur MS, Gaska R. Large-signal linearity in III-N MOSDHFETs Ieee Electron Device Letters. 24: 369-371. DOI: 10.1109/Led.2003.813355 |
0.37 |
|
| 2003 |
Simin G, Adivarahan V, Fatima H, Saygi S, Koudymov A, He X, Shuai W, Rai S, Yang J, Khan MA, Tarakji A, Deng J, Gaska R, Shur MS. Insulated gate 111-N devices and ICs 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 398-399. DOI: 10.1109/ISDRS.2003.1272152 |
0.311 |
|
| 2003 |
Rumyantsev SL, Deng Y, Shur S, Levinshtein ME, Khan MA, Simin G, Yang J, Hu X, Gaska R. On the low frequency noise mechanisms in GaN/AlGaN HFETs Semiconductor Science and Technology. 18: 589-593. DOI: 10.1088/0268-1242/18/6/333 |
0.456 |
|
| 2003 |
Tamulaitis G, Yilmaz I, Shur MS, Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Schujman SB, Schowalter LJ. Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities Applied Physics Letters. 83: 3507-3509. DOI: 10.1063/1.1623322 |
0.374 |
|
| 2003 |
Kazlauskas K, Tamulaitis G, Žukauskas A, Khan MA, Yang JW, Zhang J, Kuokstis E, Simin G, Shur MS, Gaska R. Exciton and carrier motion in quaternary AlInGaN Applied Physics Letters. 82: 4501-4503. DOI: 10.1063/1.1586782 |
0.352 |
|
| 2003 |
Dmitriev AP, Kachorovskii VY, Shur MS, Gaska R. Nonlinear screening of pyroelectric films and grains in semiconductor matrix Journal of Applied Physics. 94: 566-572. DOI: 10.1063/1.1576491 |
0.32 |
|
| 2003 |
Hu X, Deng J, Pala N, Gaska R, Shur MS, Chen CQ, Yang J, Simin G, Khan MA, Rojo JC, Schowalter LJ. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Applied Physics Letters. 82: 1299-1301. DOI: 10.1063/1.1555282 |
0.613 |
|
| 2003 |
Shatalov M, Chitnis A, Mandavilli V, Pachipulusu R, Zhang JP, Adivarahan V, Wu S, Simin G, Khan MA, Tamulaitis G, Sereika A, Yilmaz I, Shur MS, Gaska R. Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm Applied Physics Letters. 82: 167-169. DOI: 10.1063/1.1536729 |
0.386 |
|
| 2003 |
Bu G, Ciplys D, Shur M, Schowalter LJ, Schujman S, Gaska R. Temperature coefficient of SAW frequency in single crystal bulk AlN Electronics Letters. 39: 755-757. DOI: 10.1049/El:20030488 |
0.31 |
|
| 2003 |
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Solid-State Electronics. 47: 1099-1104. DOI: 10.1016/S0038-1101(02)00475-6 |
0.623 |
|
| 2003 |
Kazlauskas K, Tamulaitis G, Žukauskas A, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Localization and Hopping of Excitons in Quaternary AlInGaN Physica Status Solidi (C). 512-515. DOI: 10.1002/Pssc.200390101 |
0.303 |
|
| 2003 |
Aleksiejūnas R, Sūdžius M, Gudelis V, Malinauskas T, Jarašiūnas K, Fareed Q, Gaska R, Shur MS, Zhang J, Yang J, Kuokštis E, Khan MA. Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique Physica Status Solidi (C). 2686-2690. DOI: 10.1002/Pssc.200303261 |
0.361 |
|
| 2003 |
Sun WH, Kuokstis E, Gaevski M, Zhang JP, Chen CQ, Wang HM, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Strong ultraviolet emission from non‐polar AlGaN/GaN quantum wells grown over r‐plane sapphire substrates Physica Status Solidi (a). 200: 48-51. DOI: 10.1002/Pssa.200303422 |
0.401 |
|
| 2003 |
Chitnis A, Adivarahan V, Zhang JP, Shatalov M, Wu S, Yang J, Simin G, Khan MA, Hu X, Fareed Q, Gaska R, Shur MS. Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes Physica Status Solidi (a). 200: 99-101. DOI: 10.1002/Pssa.200303420 |
0.399 |
|
| 2002 |
Juršebas S, Miasojedovas S, Kurilčik N, Kurilčik G, Žukauskas A, Yang J, Khan MA, Shur MS, Gaska R. Stimulated emission in InGaN/GaN quantum wells Materials Science Forum. 265-268. DOI: 10.4028/Www.Scientific.Net/Msf.384-385.265 |
0.352 |
|
| 2002 |
Clarke FW, Ho FD, Khan MA, Simin G, Yang J, Gaska R, Shur MS, Deng J, Karmalkar S. Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L9.10 |
0.356 |
|
| 2002 |
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS Fluctuation and Noise Letters. 2. DOI: 10.1142/S0219477502000968 |
0.588 |
|
| 2002 |
Rumyantsev SL, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Yang JW. Low Frequency Noise in Gallium Nitride Field Effect Transistors International Journal of High Speed Electronics and Systems. 12: 449-458. DOI: 10.1142/S012915640200137X |
0.334 |
|
| 2002 |
Simin G, Koudymov A, Fatima H, Zhang J, Yang J, Khan MA, Hu X, Tarakji A, Gaska R, Shur MS. SiO 2/AlGaN/InGaN/GaN MOSDHFETs Ieee Electron Device Letters. 23: 458-460. DOI: 10.1109/Led.2002.801316 |
0.415 |
|
| 2002 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Ivanov PA, Asif Khan M, Simin G, Hu X, Yang J. Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors Semiconductor Science and Technology. 17: 476-479. DOI: 10.1088/0268-1242/17/5/312 |
0.574 |
|
| 2002 |
Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur MS, Rojo JC, Schowalter LJ. Deep-ultraviolet emission of AlGaN/AIN quantum wells on bulk AIN Applied Physics Letters. 81: 4658-4660. DOI: 10.1063/1.1524034 |
0.393 |
|
| 2002 |
Adivarahan V, Wu S, Chitnis A, Pachipulusu R, Mandavilli V, Shatalov M, Zhang JP, Khan MA, Tamulaitis G, Sereika A, Yilmaz I, Shur MS, Gaska R. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm Applied Physics Letters. 81: 3666-3668. DOI: 10.1063/1.1519100 |
0.402 |
|
| 2002 |
Kuokstis E, Zhang J, Fareed Q, Yang JW, Simin G, Khan MA, Gaska R, Shur M, Rojo C, Schowalter L. Near-band-edge photoluminescence of wurtzite-type AlN Applied Physics Letters. 81: 2755-2757. DOI: 10.1063/1.1510586 |
0.343 |
|
| 2002 |
Koudymov A, Fatima H, Simin G, Yang J, Khan MA, Tarakji A, Hu X, Shur MS, Gaska R. Maximum current in nitride-based heterostructure field-effect transistors Applied Physics Letters. 80: 3216-3218. DOI: 10.1063/1.1476054 |
0.392 |
|
| 2002 |
Knap W, Kachorovskii V, Deng Y, Rumyantsev S, Lü JQ, Gaska R, Shur MS, Simin G, Hu X, Khan MA, Saylor CA, Brunel LC. Nonresonant detection of terahertz radiation in field effect transistors Journal of Applied Physics. 91: 9346-9353. DOI: 10.1063/1.1468257 |
0.415 |
|
| 2002 |
Ciplys D, Rimeika R, Shur MS, Rumyantsev S, Gaska R, Sereika A, Yang J, Khan MA. Visible–blind photoresponse of GaN-based surface acoustic wave oscillator Applied Physics Letters. 80: 2020-2022. DOI: 10.1063/1.1459485 |
0.354 |
|
| 2002 |
Ciplys D, Rimeika R, Shur MS, Gaska R, Deng J, Yang JW, Khan MA. Acousto-optic diffraction of blue and red light in GaN Applied Physics Letters. 80: 1701-1703. DOI: 10.1063/1.1458690 |
0.327 |
|
| 2002 |
Kuokstis E, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells Applied Physics Letters. 80: 977-979. DOI: 10.1063/1.1433164 |
0.378 |
|
| 2002 |
Ciplys D, Rimeika R, Shur MS, Gaska R, Sereika A, Yang J, Khan MA. Radio frequency response of GaN-based SAW oscillator to UV illumination by the Sun and man-made source Electronics Letters. 38: 134-135. DOI: 10.1049/El:20020053 |
0.355 |
|
| 2002 |
Tarakji A, Hu X, Koudymov A, Simin G, Yang J, Khan MA, Shur MS, Gaska R. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Solid-State Electronics. 46: 1211-1214. DOI: 10.1016/S0038-1101(02)00015-1 |
0.352 |
|
| 2002 |
Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Asif Khan M, Simin G, Yang J. Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Solid-State Electronics. 46: 711-714. DOI: 10.1016/S0038-1101(01)00302-1 |
0.596 |
|
| 2002 |
Carlos Rojo J, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Journal of Crystal Growth. 240: 508-512. DOI: 10.1016/S0022-0248(02)01078-3 |
0.327 |
|
| 2002 |
Rimeika R, Ciplys D, Shur MS, Gaska R, Khan MA, Yang J. Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire Physica Status Solidi B-Basic Solid State Physics. 234: 897-900. DOI: 10.1002/1521-3951(200212)234:3<897::Aid-Pssb897>3.0.Co;2-9 |
0.326 |
|
| 2001 |
Shur MS, Gaska R, Khan A. III-Nitride Power Devices - Good Results and Great Expectations Materials Science Forum. 807-814. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.807 |
0.306 |
|
| 2001 |
Zhang JP, Yang JW, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Simin G, Khan MA, Gaska R, Shur MS. Quaternary AlInGaN MQWs for Ultraviolet LEDs Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I4.4.1 |
0.389 |
|
| 2001 |
Zhang JP, Adivarahan V, Wang HM, Fareed Q, Kuokstis E, Chitnis A, Shatalov M, Yang JW, Simin G, Khan MA, Shur M, Gaska R. Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes Japanese Journal of Applied Physics. 40: 921. DOI: 10.1143/Jjap.40.L921 |
0.365 |
|
| 2001 |
Simin G, Hu X, Ilinskaya N, Zhang J, Tarakji A, Kumar A, Yang J, Khan MA, Gaska R, Shur MS. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging Ieee Electron Device Letters. 22: 53-55. DOI: 10.1109/55.902829 |
0.394 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Borovitskaya E, Dmitriev AP, Levinshtein ME, Gaska R, Khan MA, Yang J, Hu X, Simin G. Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors Ieee Transactions On Electron Devices. 48: 530-533. DOI: 10.1109/16.906447 |
0.623 |
|
| 2001 |
Kuokstis E, Zhang J, Ryu M-, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells Applied Physics Letters. 79: 4375-4377. DOI: 10.1063/1.1429753 |
0.402 |
|
| 2001 |
Hu X, Koudymov A, Simin G, Yang J, Asif Khan M, Tarakji A, Shur MS, Gaska R. Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Applied Physics Letters. 79: 2832-2834. DOI: 10.1063/1.1412591 |
0.421 |
|
| 2001 |
Simin G, Koudymov A, Tarakji A, Hu X, Yang J, Asif Khan M, Shur MS, Gaska R. Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 79: 2651-2653. DOI: 10.1063/1.1412282 |
0.39 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Adivarahan V, Yang J, Simin G, Khan MA. Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters. 79: 866-868. DOI: 10.1063/1.1385191 |
0.596 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Asif Khan M, Simin G, Hu X, Yang J. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors Journal of Applied Physics. 90: 310-314. DOI: 10.1063/1.1372364 |
0.611 |
|
| 2001 |
Tarakji A, Simin G, Ilinskaya N, Hu X, Kumar A, Koudymov A, Yang J, Asif Khan M, Shur MS, Gaska R. Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors Applied Physics Letters. 78: 2169-2171. DOI: 10.1063/1.1363694 |
0.401 |
|
| 2001 |
Adivarahan V, Lunev A, Khan MA, Yang J, Simin G, Shur MS, Gaska R. Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices Applied Physics Letters. 78: 2781-2783. DOI: 10.1063/1.1353813 |
0.306 |
|
| 2001 |
Ivanov PA, Levinshtein ME, Simin G, Hu X, Yang J, Khan MA, Rumyantsev SL, Shur MS, Gaska R. Drift mobility of electrons in AlGaN/GaN MOSHFET Electronics Letters. 37: 1479-1481. DOI: 10.1049/El:20010982 |
0.354 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Thin n-GaN films with low level of 1/f noise Electronics Letters. 37: 720-721. DOI: 10.1049/El:20010468 |
0.586 |
|
| 2001 |
Ciplys D, Rimeika R, Sereika A, Gaska R, Shur MS, Yang JW, Khan MA. GaN-based SAW delay-line oscillator Electronics Letters. 37: 545-546. DOI: 10.1049/El:20010358 |
0.359 |
|
| 2001 |
Zhang JP, Kuokstis E, Fareed Q, Wang HM, Yang JW, Simin G, Khan MA, Tamulaitis G, Kurilcik G, Jursenas S, Zukauskas A, Gaska R, Shur M. Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters Physica Status Solidi (a). 188: 95-99. DOI: 10.1002/1521-396X(200111)188:1<95::Aid-Pssa95>3.0.Co;2-Q |
0.364 |
|
| 2001 |
Simin G, Tarakji A, Hu X, Koudymov A, Yang J, Khan MA, Shur MS, Gaska R. High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors Physica Status Solidi (a). 188: 219-222. DOI: 10.1002/1521-396X(200111)188:1<219::Aid-Pssa219>3.0.Co;2-L |
0.38 |
|
| 2001 |
Shatalov M, Chitnis A, Basak D, Yang JW, Fareed Q, Simin G, Asif Khan M, Gaska R, Shur MS. Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting Physica Status Solidi (a) Applied Research. 188: 147-150. DOI: 10.1002/1521-396X(200111)188:1<147::Aid-Pssa147>3.0.Co;2-L |
0.403 |
|
| 2001 |
Kuokstis E, Zhang J, Yang JW, Simin G, Khan MA, Gaska R, Shur MS. Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells Physica Status Solidi B-Basic Solid State Physics. 228: 559-562. DOI: 10.1002/1521-3951(200111)228:2<559::Aid-Pssb559>3.0.Co;2-V |
0.367 |
|
| 2000 |
Shur MS, Gaska R, Khan A. Physics of GaN Based Electronic Devices The Japan Society of Applied Physics. 2000: 140-141. DOI: 10.7567/Ssdm.2000.E-2-1 |
0.318 |
|
| 2000 |
Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 612-618. DOI: 10.1557/S109257830000483X |
0.601 |
|
| 2000 |
Knap W, Borovitskaya E, Shur MS, Gaska R, Karczewski G, Brandt B, Maude D, Frayssinet E, Lorenzini P, Grandjean N, Massies J, Yang JW, Hu X, Simin G, Khan MA, et al. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G7.3 |
0.377 |
|
| 2000 |
Rumyantsev S, Levinshtein ME, Gaska R, Shur MS, Yang JW, Khan MA. Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates Journal of Applied Physics. 87: 1849-1854. DOI: 10.1063/1.372102 |
0.45 |
|
| 2000 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors Journal of Applied Physics. 88: 6726-6730. DOI: 10.1063/1.1321790 |
0.616 |
|
| 2000 |
Tamulaitis G, Kazlauskas K, Juršėnas S, Žukauskas A, Khan MA, Yang JW, Zhang J, Simin G, Shur MS, Gaska R. Optical bandgap formation in AlInGaN alloys Applied Physics Letters. 77: 2136-2138. DOI: 10.1063/1.1314288 |
0.38 |
|
| 2000 |
Adivarahan V, Simin G, Yang JW, Lunev A, Khan MA, Pala N, Shur M, Gaska R. SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors Applied Physics Letters. 77: 863-865. DOI: 10.1063/1.1306647 |
0.636 |
|
| 2000 |
Khan MA, Hu X, Tarakji A, Simin G, Yang J, Gaska R, Shur MS. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters. 77: 1339-1341. DOI: 10.1063/1.1290269 |
0.453 |
|
| 2000 |
Gaska R, Shur MS, Bykhovski AD, Yang JW, Khan MA, Kaminski VV, Soloviov SM. Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN Applied Physics Letters. 76: 3956-3958. DOI: 10.1063/1.126833 |
0.327 |
|
| 2000 |
Khan MA, Yang JW, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur MS, Beaumont B, Teisseire M, Neu G. GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates Applied Physics Letters. 76: 3807-3809. DOI: 10.1063/1.126788 |
0.444 |
|
| 2000 |
Shur MS, Bykhovski AD, Gaska R, Khan MA, Yang JW. AlGaN–GaN–AlInGaN induced base transistor Applied Physics Letters. 76: 3298-3300. DOI: 10.1063/1.126612 |
0.396 |
|
| 2000 |
Juršėnas S, Kurilčik G, Tamulaitis G, Žukauskas A, Gaska R, Shur MS, Khan MA, Yang JW. Dynamic behavior of hot-electron–hole plasma in highly excited GaN epilayers Applied Physics Letters. 76: 2388-2390. DOI: 10.1063/1.126355 |
0.354 |
|
| 2000 |
Ciplys D, Gaska R, Shur MS, Rimeika R, Yang JW, Khan MA. Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire Applied Physics Letters. 76: 2232-2234. DOI: 10.1063/1.126331 |
0.331 |
|
| 2000 |
Simin G, Hu X, Ilinskaya N, Kumar A, Koudymov A, Zhang J, Asif Khan M, Gaska R, Shur MS. 7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates Electronics Letters. 36: 2043-2044. DOI: 10.1049/El:20001401 |
0.382 |
|
| 2000 |
Rumyantsev SL, Shur MS, Gaska R, Hu X, Khan A, Simin G, Yang J, Zhang N, DenBaars S, Mishra UK. Transient processes in AlGaN/GaN heterostructure field effect transistors Electronics Letters. 36: 757-759. DOI: 10.1049/El:20000573 |
0.393 |
|
| 2000 |
Hu X, Simin G, Yang J, Khan MA, Gaska R, Shur MS. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate Electronics Letters. 36: 753-754. DOI: 10.1049/El:20000557 |
0.37 |
|
| 2000 |
Ciplys D, Rimeika R, Gaska R, Shur MS, Khan A, Yang JW. Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures Electronics Letters. 36: 591-592. DOI: 10.1049/El:20000415 |
0.339 |
|
| 2000 |
Pala N, Gaska R, Rumyantsev S, Shur MS, Asif Khan M, Hu X, Simin G, Yang J. Low-frequency noise in AlGaN/GaN MOSHFETs Electronics Letters. 36: 268-270. DOI: 10.1049/El:20000171 |
0.635 |
|
| 2000 |
Shur MS, Bykhovski AD, Gaska R. Two-dimensional hole gas induced by piezoelectric and pyroelectric charges Solid-State Electronics. 44: 205-210. DOI: 10.1016/S0038-1101(99)00225-7 |
0.356 |
|
| 1999 |
Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.9 |
0.651 |
|
| 1999 |
Tager AA, Gaska R, Avrutsky IA, Fay M, Chik H, SpringThorpe A, Eicher S, Xu JM, Shur M. Ion-implanted GaAs-InGaAs lateral current injection laser Ieee Journal On Selected Topics in Quantum Electronics. 5: 664-672. DOI: 10.1109/2944.788433 |
0.333 |
|
| 1999 |
Gaska R, Shur MS, Fjeldly TA, Bykhovski AD. Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications Journal of Applied Physics. 85: 3009-3011. DOI: 10.1063/1.369621 |
0.391 |
|
| 1999 |
Tamulaitis G, Žukauskas A, Yang JW, Khan MA, Shur MS, Gaska R. Heating of photogenerated electrons and holes in highly excited GaN epilayers Applied Physics Letters. 75: 2277-2279. DOI: 10.1063/1.124989 |
0.328 |
|
| 1999 |
Gaska R, Shur MS, Bykhovski AD, Orlov AO, Snider GL. Electron mobility in modulation-doped AlGaN-GaN heterostructures Applied Physics Letters. 74: 287-289. DOI: 10.1063/1.123001 |
0.381 |
|
| 1999 |
Shur MS, Gaska R, Bykhovski A. GaN-based electronic devices Solid-State Electronics. 43: 1451-1458. DOI: 10.1016/S0038-1101(99)00088-X |
0.404 |
|
| 1999 |
Khan MA, Yang JW, Simin G, Loye Hz, Bicknell-Tassius R, Gaska R, Shur MS, Tamulaitis G, Zukauskas A. Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure Physica Status Solidi (a). 176: 227-230. DOI: 10.1002/(Sici)1521-396X(199911)176:1<227::Aid-Pssa227>3.0.Co;2-Q |
0.334 |
|
| 1999 |
Deng J, Iñiguez B, Shur MS, Gaska R, Khan MA, Yang JW. Microwave Simulation on the Performance of High Power GaN/AlGaN Heterostructure Field Effect Transistors Physica Status Solidi (a). 176: 205-208. DOI: 10.1002/(Sici)1521-396X(199911)176:1<205::Aid-Pssa205>3.0.Co;2-5 |
0.329 |
|
| 1999 |
Rumyantsev S, Levinshtein ME, Gaska R, Shur MS, Khan A, Yang JW, Simin G, Ping A, Adesida T. Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates Physica Status Solidi (a). 176: 201-204. DOI: 10.1002/(Sici)1521-396X(199911)176:1<201::Aid-Pssa201>3.0.Co;2-L |
0.424 |
|
| 1999 |
Žukauskas A, Tamulaitis G, Gaska R, Shur MS, Khan MA, Yang JW. Hot Electrons and Holes in Highly Photoexcited GaN Epilayers Physica Status Solidi B-Basic Solid State Physics. 216: 495-499. DOI: 10.1002/(Sici)1521-3951(199911)216:1<495::Aid-Pssb495>3.0.Co;2-0 |
0.364 |
|
| 1998 |
Gaska R, Shur MS, Yang JW, Osinsky A, Orlov AO, Snider GL. Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates Materials Science Forum. 1445-1448. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1445 |
0.381 |
|
| 1998 |
Shur MS, Bykhovski AD, Gaska R. Pyroelectric and Piezoelectric Properties of Gan-Based Materials Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G1.6 |
0.358 |
|
| 1998 |
Gaska R, Shur MS, Yang JW, Fjeldly TA. Double Channel AlGaN/GaN Heterostructure Field Effect Transistor Mrs Proceedings. 512: 9. DOI: 10.1557/Proc-512-9 |
0.331 |
|
| 1998 |
Osinsky A, Shur MS, Gaska R. Temperature Dependence of Breakdown Field in p-π-n GaN Diodes Mrs Proceedings. 512: 15. DOI: 10.1557/Proc-512-15 |
0.329 |
|
| 1998 |
Gaska R, Osinsky A, Yang JW, Shur MS. Self-heating in high-power AlGaN-GaN HFETs Ieee Electron Device Letters. 19: 89-91. DOI: 10.1109/55.661174 |
0.39 |
|
| 1998 |
Chen Q, Yang J, Gaska R, Khan M, Shur M, Sullivan G, Sailor A, Higgings J, Ping A, Adesida I. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor Ieee Electron Device Letters. 19: 44-46. DOI: 10.1109/55.658598 |
0.431 |
|
| 1998 |
Kuksenkov DV, Temkin H, Osinsky A, Gaska R, Khan MA. Low-frequency noise and performance of GaN p-n junction photodetectors Journal of Applied Physics. 83: 2142-2146. DOI: 10.1063/1.366950 |
0.397 |
|
| 1998 |
Bykhovski AD, Gaska R, Shur MS. Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors Applied Physics Letters. 73: 3577-3579. DOI: 10.1063/1.122829 |
0.353 |
|
| 1998 |
Levinshtein ME, Rumyantsev SL, Gaska R, Yang JW, Shur MS. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise Applied Physics Letters. 73: 1089-1091. DOI: 10.1063/1.122093 |
0.438 |
|
| 1998 |
Dyakonova N, Dickens A, Shur MS, Gaska R, Yang JW. Temperature Dependence Of Impact Ionization In Algan-Gan Heterostructure Field Effect Transistors Applied Physics Letters. 72: 2562-2564. DOI: 10.1063/1.121418 |
0.349 |
|
| 1998 |
Kuksenkov DV, Temkin H, Osinsky A, Gaska R, Khan MA. Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction Applied Physics Letters. 72: 1365-1367. DOI: 10.1063/1.121056 |
0.41 |
|
| 1998 |
Gaska R, Yang JW, Osinsky A, Chen Q, Khan MA, Orlov AO, Snider GL, Shur MS. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Applied Physics Letters. 72: 707-709. DOI: 10.1063/1.120852 |
0.331 |
|
| 1998 |
Osinsky A, Gangopadhyay S, Yang JW, Gaska R, Kuksenkov D, Temkin H, Shmagin IK, Chang YC, Muth JF, Kolbas RM. Visible-blind GaN Schottky barrier detectors grown on Si(111) Applied Physics Letters. 72: 551-553. DOI: 10.1063/1.120755 |
0.3 |
|
| 1998 |
Gaska R, Yang JW, Bykhovski AD, Shur MS, Kaminski VV, Soloviov SM. The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures Applied Physics Letters. 72: 64-66. DOI: 10.1063/1.120645 |
0.325 |
|
| 1998 |
Gaska R, Deng J, Shur MS. Low-threshold AlGaN-GaN heterostructure field effect transistors for digital applications Electronics Letters. 34: 2367-2368. DOI: 10.1049/El:19981665 |
0.377 |
|
| 1998 |
Kuksenkov D, Giudice G, Temkin H, Gaska R, Ping A, Adesida I. Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates Electronics Letters. 34: 2274. DOI: 10.1049/El:19981588 |
0.418 |
|
| 1998 |
Dyakonova N, Dickens A, Shur MS, Gaska R. Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates Electronics Letters. 34: 1699-1700. DOI: 10.1049/El:19981174 |
0.38 |
|
| 1998 |
Osinsky A, Shur MS, Gaska R, Chen Q. Avalanche breakdown and breakdown luminescence in p-/spl pi/-n GaN diodes Electronics Letters. 34: 691-692. DOI: 10.1049/El:19980535 |
0.359 |
|
| 1997 |
Gaska R, Chen Q, Yang J, Osinsky A, Khan MA, Shur MS. High-temperature performance of AlGaN/GaN HFETs on SiC substrates Ieee Electron Device Letters. 18: 492-494. DOI: 10.1109/55.624930 |
0.421 |
|
| 1997 |
Gaska R, Yang JW, Osinsky A, Bykhovski AD, Shur MS. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 71: 3673-3675. DOI: 10.1063/1.120477 |
0.407 |
|
| 1997 |
Osinsky A, Gangopadhyay S, Gaska R, Williams B, Khan MA, Kuksenkov D, Temkin H. Low noise p-π-n GaN ultraviolet photodetectors Applied Physics Letters. 71: 2334-2336. DOI: 10.1063/1.120023 |
0.383 |
|
| 1997 |
Chen Q, Gaska R, Asif Khan M, Shur M, Ping A, Adesida I, Burm J, Schaff W, Eastman L. Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures Electronics Letters. 33: 637. DOI: 10.1049/El:19970403 |
0.398 |
|
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