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Fan Ren - Publications

Affiliations: 
Chemical Engineering University of Florida, Gainesville, Gainesville, FL, United States 
 1985 Polymer Science and Engineering Polytechnic Institute of Brooklyn, Brooklyn, New York, United States 
 1991 Inorganic Chemistry Polytechnic Institute of Brooklyn, Brooklyn, New York, United States 
Website:
http://ww2.che.ufl.edu/ren/
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Year Citation  Score
2021 Lee G, Baek JH, Ren F, Pearton SJ, Lee GH, Kim J. Artificial Neuron and Synapse Devices Based on 2D Materials. Small (Weinheim An Der Bergstrasse, Germany). e2100640. PMID 33817985 DOI: 10.1002/smll.202100640  0.309
2020 Fares C, Elhassani R, Partain J, Hsu SM, Craciun V, Ren F, Esquivel-Upshaw JF. Annealing and N Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics. Materials (Basel, Switzerland). 13. PMID 32455653 DOI: 10.3390/Ma13102375  0.33
2020 Afonso Camargo SE, Mohiuddeen AS, Fares C, Partain JL, Carey PH, Ren F, Hsu SM, Clark AE, Esquivel-Upshaw JF. Anti-Bacterial Properties and Biocompatibility of Novel SiC Coating for Dental Ceramic. Journal of Functional Biomaterials. 11. PMID 32443691 DOI: 10.3390/Jfb11020033  0.303
2020 Islam Z, Haque A, Glavin NR, Xian M, Ren F, Polyakov AY, Kochkova AI, Tadjer M, Pearton SJ. In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008. DOI: 10.1149/2162-8777/Ab981D  0.356
2020 Carey PH, Ren F, Bae J, Kim J, Pearton SJ. Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 35008. DOI: 10.1149/2162-8777/Ab8019  0.409
2020 Carey PH, Ren F, Bae J, Kim J, Pearton SJ. Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003. DOI: 10.1149/2162-8777/Ab71F0  0.441
2020 CareyIV PH, Ren F, Armstrong AM, Klein BA, Allerman AA, Douglas EA, Baca AG, Pearton SJ. High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202. DOI: 10.1116/1.5135590  0.419
2020 Islam Z, Xian M, Haque A, Ren F, Tadjer M, Glavin N, Pearton S. In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061. DOI: 10.1109/Ted.2020.3000441  0.33
2020 Polyakov AY, Smirnov NB, Shchemerov IV, Vasilev A, Yakimov EB, Chernykh AV, Kochkova AI, lAGOV PB, Pavlov YS, Kukharchuk OF, Suvorov AA, Garanin NS, Lee I, Xian M, Ren F, et al. Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 Journal of Physics D. 53: 274001. DOI: 10.1088/1361-6463/Ab83C4  0.357
2020 Modak S, Chernyak L, Xian M, Ren F, Pearton SJ, Khodorov S, Lubomirsky I, Ruzin A, Dashevsky Z. Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702. DOI: 10.1063/5.0017742  0.339
2020 Fares C, Xian M, Smith DJ, McCartney MR, Kneiß M, von Wenckstern H, Grundmann M, Tadjer M, Ren F, Pearton SJ. Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74 Journal of Applied Physics. 127: 105701. DOI: 10.1063/5.0002875  0.346
2020 Baik KH, Jung S, Cho C, Park K, Ren F, Pearton SJ, Jang S. AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer Sensors and Actuators B-Chemical. 317: 128234. DOI: 10.1016/J.Snb.2020.128234  0.643
2019 Chen Z, Fares C, Elhassani R, Ren F, Kim M, Hsu S, Clark AE, Esquivel-Upshaw JF. Demonstration of SiO/SiC based protective coating for dental ceramic prostheses. Journal of the American Ceramic Society. American Ceramic Society. 102: 6591-6599. PMID 31819280 DOI: 10.1111/Jace.16525  0.328
2019 Ren F, Yang JC, Fares C, Pearton SJ. Device processing and junction formation needs for ultra-high power Ga 2 O 3 electronics Mrs Communications. 9: 77-87. DOI: 10.1557/Mrc.2019.4  0.39
2019 Ren F, Singh R, Pearton S, Kim J, Polyakov A, Ringel S, Jia R. Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices Ecs Journal of Solid State Science and Technology. 8: Y3-Y3. DOI: 10.1149/2.0431907Jss  0.427
2019 Xian M, Fares C, Bae J, Kim J, Ren F, Pearton SJ. Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0231912Jss  0.377
2019 Yang J, Koller GJ, Fares C, Ren F, Pearton SJ, Bae J, Kim J, Smith DJ. 60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0091907Jss  0.482
2019 Lee JW, Abernathy CR, Pearton SJ, Ren F, Hobson WS, Shul RJ, Constantine C, Barratt C. Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes Journal of the Electrochemical Society. 144: 1417-1422. DOI: 10.1149/1.1837604  0.321
2019 Vartuli CB, Pearton SJ, Lee JW, Abernathy CR, Mackenzie JD, Zolper JC, Shul RJ, Ren F. Wet Chemical Etching of AlN and InAlN in KOH Solutions Journal of the Electrochemical Society. 143: 3681-3684. DOI: 10.1149/1.1837271  0.358
2019 Lee JW, Pearton SJ, Santana CJ, Mileham JR, Lambers ES, Abernathy CR, Ren F, Hobson WS. High Ion Density Plasma Etching of InGaP, AlInP, and AlGaP in  CH 4 /  H 2 / Ar Journal of the Electrochemical Society. 143: 1093-1098. DOI: 10.1149/1.1836589  0.32
2019 Meyer LC, Lee JW, Johnson D, Huang M, Ren F, Anderson TJ, LaRoche JR, Lothian JR, Abernathy CR, Pearton SJ. Study of  NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System Journal of the Electrochemical Society. 146: 2717-2719. DOI: 10.1149/1.1391998  0.381
2019 Mastro MA, Hite JK, Eddy CR, Tadjer MJ, Pearton SJ, Ren F, Kim J. Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices International Journal of High Speed Electronics and Systems. 28: 1940007. DOI: 10.1142/S012915641940007X  0.332
2019 Xian M, Elhassani R, Fares C, Ren F, Tadjer M, Pearton SJ. Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 61205. DOI: 10.1116/1.5127511  0.426
2019 Xian M, Fares C, Ren F, Gila BP, Chen Y, Liao Y, Tadjer M, Pearton SJ. Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C Journal of Vacuum Science & Technology B. 37: 061201. DOI: 10.1116/1.5125006  0.647
2019 Sharma R, Law ME, Xian M, Tadjer M, Anber EA, Foley D, Lang AC, Hart JL, Nathaniel J, Taheri ML, Ren F, Pearton SJ, Kuramata A. Diffusion of implanted Ge and Sn in β-Ga2O3 Journal of Vacuum Science & Technology B. 37: 051204. DOI: 10.1116/1.5118001  0.332
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477. DOI: 10.1109/Tsm.2019.2932074  0.434
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors Ieee Journal of the Electron Devices Society. 7: 444-452. DOI: 10.1109/Jeds.2019.2907306  0.385
2019 Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3 Semiconductor Science and Technology. 34: 025006. DOI: 10.1088/1361-6641/Aaf8D7  0.532
2019 Sharma R, Law ME, Fares C, Tadjer M, Ren F, Kuramata A, Pearton SJ. The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 Aip Advances. 9: 085111. DOI: 10.1063/1.5115149  0.329
2019 Polyakov AY, Lee I, Smirnov NB, Yakimov EB, Shchemerov IV, Chernykh AV, Kochkova AI, Vasilev AA, Carey PH, Ren F, Smith DJ, Pearton SJ. Defects at the surface of β-Ga2O3 produced by Ar plasma exposure Apl Materials. 7: 61102. DOI: 10.1063/1.5109025  0.379
2019 Polyakov AY, Lee I, Smirnov NB, Yakimov EB, Shchemerov IV, Chernykh AV, Kochkova AI, Vasilev AA, Ren F, Carey PH, Pearton SJ. Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra Applied Physics Letters. 115: 32101. DOI: 10.1063/1.5108790  0.389
2019 Yang J, Xian M, Carey P, Fares C, Partain J, Ren F, Tadjer M, Anber E, Foley D, Lang A, Hart J, Nathaniel J, Taheri ML, Pearton SJ, Kuramata A. Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays Applied Physics Letters. 114: 232106. DOI: 10.1063/1.5100256  0.365
2019 Polyakov AY, Smirnov NB, Schemerov IV, Chernykh AV, Yakimov EB, Kochkova AI, Yang J, Fares C, Ren F, Pearton SJ. Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions Journal of Applied Physics. 125: 95702. DOI: 10.1063/1.5080941  0.378
2019 Modak S, Lee J, Chernyak L, Yang J, Ren F, Pearton SJ, Khodorov S, Lubomirsky I. Electron injection-induced effects in Si-doped β-Ga2O3 Aip Advances. 9: 015127. DOI: 10.1063/1.5079730  0.338
2019 Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 Journal of Electronic Materials. 48: 1568-1573. DOI: 10.1007/S11664-018-06885-X  0.576
2019 Lee G, Pearton SJ, Ren F, Kim J. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) Advanced Electronic Materials. 5: 1970015. DOI: 10.1002/Aelm.201970015  0.466
2018 Lee G, Pearton SJ, Ren F, Kim J. Two-dimensionally layered p-black phosphorus/n-MoS/p-black phosphorus Heterojunctions. Acs Applied Materials & Interfaces. PMID 29485269 DOI: 10.1021/Acsami.7B19334  0.489
2018 Wang Y, Jang S, Sakata T, Ren F. Preface—JSS Focus Issue on Semiconductor-Based Sensors for Application to Vapors, Chemicals, Biological Species, and Medical Diagnosis Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0341807Jss  0.665
2018 Jang S, Jung S, Kim J, Ren F, Pearton SJ, Baik KH. Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals Ecs Journal of Solid State Science and Technology. 7: Q3180-Q3182. DOI: 10.1149/2.0261807Jss  0.586
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Yang J, Ren F, Lo C, Laboutin O, Johnson JW, Pearton SJ. Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 7: Q1-Q7. DOI: 10.1149/2.0131802Jss  0.35
2018 Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 Ecs Journal of Solid State Science and Technology. 7: P519-P523. DOI: 10.1149/2.0041810Jss  0.545
2018 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications Ecs Journal of Solid State Science and Technology. 7: Q3020-Q3024. DOI: 10.1149/2.0041807Jss  0.622
2018 Fares C, Ren F, Hays DC, Gila BP, Pearton SJ. Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 Ecs Journal of Solid State Science and Technology. 8: Q3001-Q3006. DOI: 10.1149/2.0021907Jss  0.543
2018 Baik KH, Jung S, Ren F, Pearton SJ, Jang S. Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability Ecs Journal of Solid State Science and Technology. 7: Q3009-Q3013. DOI: 10.1149/2.002107Jss  0.603
2018 Fares C, Ren F, Pearton SJ. Temperature-Dependent Electrical Characteristics of β-Ga2O3Diodes with W Schottky Contacts up to 500°C Ecs Journal of Solid State Science and Technology. 8: Q3007-Q3012. DOI: 10.1149/2.0011907Jss  0.353
2018 Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 Journal of Vacuum Science & Technology B. 36: 061207. DOI: 10.1116/1.5052620  0.572
2018 Yang J, Sparks Z, Ren F, Pearton SJ, Tadjer M. Effect of surface treatments on electrical properties of β-Ga2O3 Journal of Vacuum Science & Technology B. 36: 061201. DOI: 10.1116/1.5052229  0.33
2018 Fares C, Ren F, Pearton SJ, Yang G, Kim J, Lo C, Johnson JW. Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors Journal of Vacuum Science & Technology B. 36: 052202. DOI: 10.1116/1.5049596  0.371
2018 Fares C, Ren F, Pearton SJ, Yang G, Kim J, Lo C, Wayne Johnson J. Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors Journal of Vacuum Science & Technology B. 36: 041203. DOI: 10.1116/1.5042261  0.338
2018 Yang J, Chen Z, Ren F, Pearton SJ, Yang G, Kim J, Lee J, Flitsiyan E, Chernyak L, Kuramata A. 10 MeV proton damage in β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 011206. DOI: 10.1116/1.5013155  0.387
2018 Yang J, Ren F, Pearton SJ, Kuramata A. Vertical Geometry, 2-A Forward Current Ga 2 O 3 Schottky Rectifiers on Bulk Ga 2 O 3 Substrates Ieee Transactions On Electron Devices. 65: 2790-2796. DOI: 10.1109/Ted.2018.2838439  0.431
2018 Pearton SJ, Ren F, Tadjer M, Kim J. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS Journal of Applied Physics. 124: 220901. DOI: 10.1063/1.5062841  0.346
2018 Fares C, Ren F, Hays DC, Gila BP, Tadjer M, Hobart KD, Pearton SJ. Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 Applied Physics Letters. 113: 182101. DOI: 10.1063/1.5055941  0.545
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Pearton SJ, Ren F, Chernykh AV, Kochkova AI. Electrical properties of bulk semi-insulating β-Ga2O3(Fe) Applied Physics Letters. 113: 142102. DOI: 10.1063/1.5051986  0.335
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Yakimov EB, Pearton SJ, Fares C, Yang J, Ren F, Kim JH, Lagov PB, Stolbunov VS, Kochkova A. Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 Applied Physics Letters. 113: 92102. DOI: 10.1063/1.5049130  0.305
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Pearton SJ, Ren F, Chernykh AV, Lagov PB, Kulevoy TV. Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si Apl Materials. 6: 96102. DOI: 10.1063/1.5042646  0.35
2018 Yang J, Ren F, Tadjer M, Pearton SJ, Kuramata A. Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit Aip Advances. 8: 055026. DOI: 10.1063/1.5034444  0.354
2018 Yang J, Fares C, Ren F, Sharma R, Patrick E, Law ME, Pearton SJ, Kuramata A. Effects of fluorine incorporation into β-Ga2O3 Journal of Applied Physics. 123: 165706. DOI: 10.1063/1.5031001  0.355
2018 Yang J, Carey P, Ren F, Mastro MA, Beers K, Pearton SJ, Kravchenko II. Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors Applied Physics Letters. 113: 032101. DOI: 10.1063/1.5029902  0.311
2018 Yakimov EB, Polyakov AY, Smirnov NB, Shchemerov IV, Yang J, Ren F, Yang G, Kim JH, Pearton SJ. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current Journal of Applied Physics. 123: 185704. DOI: 10.1063/1.5027559  0.322
2018 Polyakov AY, Smirnov NB, Shchemerov IV, Yakimov EB, Yang J, Ren F, Yang G, Kim JH, Kuramata A, Pearton SJ. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage Applied Physics Letters. 112: 32107. DOI: 10.1063/1.5012993  0.367
2018 Lee J, Flitsiyan E, Chernyak L, Yang J, Ren F, Pearton SJ, Meyler B, Salzman YJ. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length Applied Physics Letters. 112: 082104. DOI: 10.1063/1.5011971  0.333
2018 Pearton SJ, Yang J, Cary PH, Ren F, Kim J, Tadjer MJ, Mastro MA. A review of Ga2O3materials, processing, and devices Applied Physics Reviews. 5: 011301. DOI: 10.1063/1.5006941  0.375
2018 Jang S, Jung S, Beers K, Yang J, Ren F, Kuramata A, Pearton S, Baik KH. A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 Journal of Alloys and Compounds. 731: 118-125. DOI: 10.1016/J.Jallcom.2017.09.336  0.64
2017 Yang G, Jang S, Ren F, Pearton SJ, Kim J. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. Acs Applied Materials & Interfaces. PMID 29083157 DOI: 10.1021/Acsami.7B13881  0.649
2017 Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3 Japanese Journal of Applied Physics. 56: 071101. DOI: 10.7567/Jjap.56.071101  0.693
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing Journal of the Electrochemical Society. 164: B417-B420. DOI: 10.1149/2.0781709Jes  0.575
2017 Ren F, Bardwell JA, Pearton SJ, Overberg ME. Preface—JSS Focus Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0301711Jss  0.301
2017 Ahn S, Ren F, Yuan L, Pearton SJ, Kuramata A. Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3 Ecs Journal of Solid State Science and Technology. 6: 68. DOI: 10.1149/2.0291701Jss  0.304
2017 Ren F, Pearton SJ, Ahn S, Lin Y, Machuca F, Weiss R, Welsh A, McCartney MR, Smith DJ, Kravchenko II. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers Ecs Journal of Solid State Science and Technology. 6: S3078-S3080. DOI: 10.1149/2.0161711Jss  0.37
2017 Polyakov AY, Smirnov NB, Shchemerov IV, Ren F, Pearton SJ. Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0091711Jss  0.344
2017 Ren F, Pearton SJ, Kang TS, Cheney DJ, Gila BP. Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2251166  0.583
2017 Carey PH, Yang J, Ren F, Hays DC, Pearton SJ, Kuramata A, Kravchenko II. Improvement of Ohmic contacts on Ga2O3through use of ITO-interlayers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 061201. DOI: 10.1116/1.4995816  0.406
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 042201. DOI: 10.1116/1.4989370  0.669
2017 Yang J, Ren F, Khanna R, Bevlin K, Geerpuram D, Tung L, Lin J, Jiang H, Lee J, Flitsiyan E, Chernyak L, Pearton SJ, Kuramata A. Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201. DOI: 10.1116/1.4986300  0.426
2017 Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 041201. DOI: 10.1116/1.4984097  0.704
2017 Yang J, Ren F, Pearton SJ, Yang G, Kim J, Kuramata A. 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 031208. DOI: 10.1116/1.4983377  0.372
2017 Yang J, Ahn S, Ren F, Pearton S, Khanna R, Bevlin K, Geerpuram D, Kuramata A. Inductively coupled plasma etching of bulk, single-crystal Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 31205. DOI: 10.1116/1.4982714  0.316
2017 Polyakov AY, Smirnov NB, Shchemerov IV, Lee I, Jang T, Dorofeev AA, Gladysheva NB, Kondratyev ES, Turusova YA, Zinovyev RA, Turutin AV, Ren F, Pearton SJ. Current relaxation analysis in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011207. DOI: 10.1116/1.4973973  0.348
2017 Hays DC, Gila BP, Pearton SJ, Trucco A, Thorpe R, Ren F. Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011206. DOI: 10.1116/1.4973882  0.593
2017 Yang J, Ahn S, Ren F, Pearton SJ, Jang S, Kuramata A. High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers Ieee Electron Device Letters. 38: 906-909. DOI: 10.1109/Led.2017.2703609  0.642
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer Ieee Electron Device Letters. 38: 657-660. DOI: 10.1109/Led.2017.2681114  0.612
2017 Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing Ieee Sensors Journal. 17: 5817-5822. DOI: 10.1109/Jsen.2017.2733343  0.662
2017 Lee J, Yadav A, Antia M, Zaffino V, Flitsiyan E, Chernyak L, Salzman J, Meyler B, Ahn S, Ren F, Pearton SJ. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors Radiation Effects and Defects in Solids. 172: 250-256. DOI: 10.1080/10420150.2017.1300903  0.384
2017 Yang J, Carey P, Ren F, Wang Y, Good ML, Jang S, Mastro MA, Pearton SJ. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 111: 202104. DOI: 10.1063/1.5011151  0.694
2017 Carey PH, Yang J, Ren F, Hays DC, Pearton SJ, Jang S, Kuramata A, Kravchenko II. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au Aip Advances. 7: 095313. DOI: 10.1063/1.4996172  0.671
2017 Yang J, Ahn S, Ren F, Pearton SJ, Jang S, Kim J, Kuramata A. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 Applied Physics Letters. 110: 192101. DOI: 10.1063/1.4983203  0.65
2017 Hays DC, Gila BP, Pearton SJ, Ren F. Energy band offsets of dielectrics on InGaZnO4 Applied Physics Reviews. 4: 021301. DOI: 10.1063/1.4980153  0.596
2017 Yang J, Ahn S, Ren F, Khanna R, Bevlin K, Geerpuram D, Pearton SJ, Kuramata A. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes Applied Physics Letters. 110: 142101. DOI: 10.1063/1.4979592  0.343
2017 Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Band alignment of Al2O3 with (−201) β-Ga2O3 Vacuum. 142: 52-57. DOI: 10.1016/J.Vacuum.2017.05.006  0.683
2017 Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Valence and conduction band offsets in AZO/Ga2O3 heterostructures Vacuum. 141: 103-108. DOI: 10.1016/J.Vacuum.2017.03.031  0.698
2017 Hays DC, Gila B, Pearton S, Thorpe R, Ren F. Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions Vacuum. 136: 137-141. DOI: 10.1016/J.Vacuum.2016.12.001  0.559
2017 Whiting P, Rudawski N, Holzworth M, Pearton S, Jones K, Liu L, Kang T, Ren F. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts Microelectronics Reliability. 70: 41-48. DOI: 10.1016/J.Microrel.2017.02.005  0.373
2017 Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Band offsets in ITO/Ga2O3 heterostructures Applied Surface Science. 422: 179-183. DOI: 10.1016/J.Apsusc.2017.05.262  0.71
2016 Hays DC, Gila BP, Pearton SJ, Ren F. Valence and Conduction Band Offsets in Sputtered LaAlO3/InGaZnO4Heterostructures Ecs Journal of Solid State Science and Technology. 5: P680-P684. DOI: 10.1149/2.0261612Jss  0.525
2016 Pearton SJ, Ren F, Patrick E, Law ME, Polyakov AY. Review - Ionizing radiation damage effects on GaN devices Ecs Journal of Solid State Science and Technology. 5: Q35-Q60. DOI: 10.1149/2.0251602Jss  0.371
2016 Polyakov AY, Smirnov NB, Dorofeev AA, Gladysheva NB, Kondratyev ES, Shemerov IV, Turutin AV, Ren F, Pearton SJ. Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC Ecs Journal of Solid State Science and Technology. 5: Q260-Q265. DOI: 10.1149/2.0191610Jss  0.372
2016 Ren F, Pearton SJ, Ahn S, Lin YH, Machuca F, Weiss R, Welsh A, McCartney MR, Smith DJ, Kravchenko II. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4963064  0.39
2016 Ahn S, Kim BJ, Lin YH, Ren F, Pearton SJ, Yang G, Kim J, Kravchenko II. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959786  0.396
2016 Kim B, Ahn S, Ren F, Pearton SJ, Yang G, Kim J. Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041231. DOI: 10.1116/1.4959028  0.342
2016 Polyakov AY, Smirnov NB, Turutin AV, Shemerov IS, Ren F, Pearton SJ, Johnson JW. Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 41216. DOI: 10.1116/1.4953347  0.435
2016 Ahn S, Lin Y, Ren F, Oh S, Jung Y, Yang G, Kim J, Mastro MA, Hite JK, Eddy CR, Pearton SJ. Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041213. DOI: 10.1116/1.4950872  0.311
2016 Ahn S, Ren F, Oh S, Jung Y, Kim J, Mastro MA, Hite JK, Eddy CR, Pearton SJ. Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041207. DOI: 10.1116/1.4948361  0.416
2016 Kang TS, Lin YH, Ahn S, Ren F, Gila BP, Pearton SJ, Cheney DJ. Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936861  0.55
2016 Ahn S, Ren F, Patrick E, Law ME, Pearton SJ, Kuramata A. Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 Applied Physics Letters. 109: 242108. DOI: 10.1063/1.4972265  0.331
2016 Ahn S, Ren F, Kim J, Oh S, Kim J, Mastro MA, Pearton SJ. Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors Applied Physics Letters. 109: 062102. DOI: 10.1063/1.4960651  0.526
2016 Wang X, Berke K, Rudawski NG, Venkatachalam DK, Elliman RG, Fridmann J, Hebard AF, Ren F, Gila BP, Appleton BR. Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing Journal of Applied Physics. 120: 025105. DOI: 10.1063/1.4955137  0.553
2016 Oh S, Kim J, Ren F, Pearton SJ, Kim J. Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity Journal of Materials Chemistry C. 4: 9245-9250. DOI: 10.1039/C6Tc02467J  0.421
2016 Morrow WK, Lee C, Denbaars SP, Ren F, Pearton SJ. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN Vacuum. 128: 34-38. DOI: 10.1016/J.Vacuum.2016.03.004  0.363
2016 Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F. Band alignment in ZrSiO4/ZnO heterojunctions Vacuum. 125: 113-117. DOI: 10.1016/J.Vacuum.2015.12.010  0.566
2015 Yadav A, Flitsiyan E, Chernyak L, Ren F, Pearton SJ, Johnson JW, Lubomirsky I. Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.511  0.361
2015 Patrick EE, Choudhury M, Ren F, Pearton SJ, Law ME. Simulation of radiation effects in AlGaN/GaN HEMTs Ecs Transactions. 66: 21-31. DOI: 10.1149/2.0181503Jss  0.339
2015 Hays DC, Gila BP, Pearton SJ, Ren F. Band offsets in HfSiO4/IGZO heterojunctions Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 061209. DOI: 10.1116/1.4936117  0.579
2015 Kang TS, Ren F, Gila BP, Pearton SJ, Patrick E, Cheney DJ, Law M, Zhang ML. Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931790  0.602
2015 Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F, Jang TS. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931035  0.594
2015 Kim BJ, Hwang YH, Ahn S, Ren F, Pearton SJ, Kim J, Jang TS. Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4930297  0.312
2015 Ahn S, Dong C, Zhu W, Kim BJ, Hwang YH, Ren F, Pearton SJ, Yang G, Kim J, Patrick E, Tracy B, Smith DJ, Kravchenko II. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4928730  0.381
2015 Hwang YH, Dong C, Hsieh YL, Zhu W, Ahn S, Ren F, Pearton SJ, Kravchenko II. Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922022  0.437
2015 Hwang YH, Ahn S, Dong C, Zhu W, Kim BJ, Le L, Ren F, Lind AG, Dahl J, Jones KS, Pearton SJ, Kravchenko II, Zhang ML. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4919237  0.312
2015 Ahn S, Zhu W, Dong C, Le L, Hwang YH, Kim BJ, Ren F, Pearton SJ, Lind AG, Jones KS, Kravchenko II, Zhang ML. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4918715  0.393
2015 Kim B, Ahn S, Hwang Y, Ren F, Pearton SJ, Kim J, Zhang M. Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 031204. DOI: 10.1116/1.4916882  0.392
2015 Yadav A, Flitsiyan E, Chernyak L, Hwang Y, Hsieh Y, Lei L, Ren F, Pearton SJ, Lubomirsky I. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors Radiation Effects and Defects in Solids. 170: 377-385. DOI: 10.1080/10420150.2015.1010170  0.379
2015 Kim BJ, Hwang YH, Ahn S, Zhu W, Dong C, Lu L, Ren F, Holzworth MR, Jones KS, Pearton SJ, Smith DJ, Kim J, Zhang ML. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing Applied Physics Letters. 106. DOI: 10.1063/1.4918530  0.374
2015 Hays DC, Gila BP, Pearton SJ, Ren F. ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy Vacuum. 122: 195-200. DOI: 10.1016/J.Vacuum.2015.09.029  0.549
2015 Hays DC, Gila BP, Lambers ES, Pearton SJ, Ren F. Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures Vacuum. 116: 60-64. DOI: 10.1016/J.Vacuum.2015.02.017  0.577
2015 Pearton SJ, Hwang YS, Ren F. Radiation Effects in GaN-Based High Electron Mobility Transistors Jom. DOI: 10.1007/S11837-015-1359-Y  0.38
2014 Hsu YR, Kang YW, Fang JY, Lee GY, Chyi JI, Chang CK, Huang CC, Hsu CP, Huang TH, Huang YF, Sun YC, Hsu CH, Chen CC, Li SS, Yeh JA, ... ... Ren F, et al. Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models. Sensors and Actuators. B, Chemical. 193: 334-339. PMID 32288246 DOI: 10.1016/J.Snb.2013.11.087  0.52
2014 Park JC, Kim KW, Gila BP, Lambers ES, Norton DP, Pearton SJ, Ren F, Kim JK, Cho H. Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. Journal of Nanoscience and Nanotechnology. 14: 8445-8. PMID 25958543 DOI: 10.1166/Jnn.2014.9935  0.543
2014 Yang G, Jung Y, Cuervo CV, Ren F, Pearton SJ, Kim J. GaN-based light-emitting diodes on graphene-coated flexible substrates. Optics Express. 22: A812-7. PMID 24922388 DOI: 10.1364/Oe.22.00A812  0.44
2014 Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665 DOI: 10.1166/Jnn.2014.7939  0.551
2014 Hwang YH, Kang TS, Ren F, Pearton SJ. Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896593  0.419
2014 Hwang YH, Ahn S, Chen D, Ren F, Gila BP, Hays D, Pearton SJ, Lo CF, Johnson JW. High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891966  0.645
2014 Anderson T, Koehler A, Hwang YH, Hsieh YL, Li S, Ren F, Johnson JW, Pearton SJ. Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891629  0.424
2014 Liu L, Xi Y, Ahn S, Ren F, Gila BP, Pearton SJ, Kravchenko II. Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 052201. DOI: 10.1116/1.4891168  0.638
2014 Hwang YH, Hsieh YL, Lei L, Li S, Ren F, Pearton SJ, Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Baca AG, Allerman AA, Sanchez CA, et al. Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4868632  0.377
2014 Liu L, Hwang Y, Xi Y, Ren F, Craciun V, Pearton SJ, Yang G, Kim H, Kim J. Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 022202. DOI: 10.1116/1.4866401  0.377
2014 Li S, Hwang Y, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME. Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation Ecs Transactions. 61: 117-126. DOI: 10.1116/1.4864070  0.406
2014 Xi Y, Hsieh YL, Hwang YH, Li S, Ren F, Pearton SJ, Patrick E, Law ME, Yang G, Kim HY, Kim J, Baca AG, Allerman AA, Sanchez CA. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4836577  0.369
2014 Hwang Y, Li S, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME, Smith DJ. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage Applied Physics Letters. 104: 082106. DOI: 10.1063/1.4866858  0.402
2014 Pearton S, Ren F. Advances in ZnO-based materials for light emitting diodes Current Opinion in Chemical Engineering. 3: 51-55. DOI: 10.1016/J.Coche.2013.11.002  0.327
2014 Pearton SJ, Deist R, Polyakov AY, Ren F, Liu L, Kim JH. Radiation Damage in GaN-Based Materials and Devices Advanced Energy Materials. 345-387. DOI: 10.1002/9781118904923.Ch9  0.364
2013 Hsu YR, Lee GY, Chyi JI, Chang CK, Huang CC, Hsu CP, Huang TH, Ren F, Wang YL. Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors. Ecs Transactions. 50: 239-243. PMID 32288936 DOI: 10.1149/05006.0239ecst  0.489
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418 DOI: 10.1364/Oe.21.029025  0.438
2013 Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510 DOI: 10.1364/Oe.21.012908  0.521
2013 Yang G, Lee C, Kim J, Ren F, Pearton SJ. Flexible graphene-based chemical sensors on paper substrates. Physical Chemistry Chemical Physics : Pccp. 15: 1798-801. PMID 23262787 DOI: 10.1039/C2Cp43717A  0.444
2013 Huang CC, Lee GY, Chyi JI, Cheng HT, Hsu CP, Hsu YR, Hsu CH, Huang YF, Sun YC, Chen CC, Li SS, Yeh JA, Yao DJ, Ren F, Wang YL. AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study. Biosensors & Bioelectronics. 41: 717-22. PMID 23102432 DOI: 10.1016/J.Bios.2012.09.066  0.516
2013 Pearton SJ, Ren F. Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors Nanomaterials and Nanotechnology. 3: 1. DOI: 10.5772/56188  0.311
2013 Pearton SJ, Ren F. p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes International Materials Reviews. 59: 61-83. DOI: 10.1179/1743280413Y.0000000025  0.403
2013 Douglas EA, Zeenberg D, Maeda M, Gila BP, Abernathy CR, Pearton SJ, Ren F. Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42. DOI: 10.1149/2.002306Ssl  0.576
2013 Liu L, Lo CF, Xi YY, Wang YX, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II, Ren F. The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2007287  0.393
2013 Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Electrical characterization of60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 051210. DOI: 10.1116/1.4820129  0.369
2013 Hwang YH, Liu L, Velez C, Ren F, Gila BP, Hays D, Pearton SJ, Lambers E, Kravchenko II, Lo CF, Johnson JW. GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4816477  0.643
2013 Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ, Kim H, Kim J, Kravchenko II. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 042202. DOI: 10.1116/1.4813785  0.493
2013 Xi Y, Liu L, Ren F, Pearton SJ, Kim J, Dabiran A, Chow PP. Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032203. DOI: 10.1116/1.4803743  0.526
2013 Pearton SJ, Deist R, Ren F, Liu L, Polyakov AY, Kim J. Review of radiation damage in GaN-based materials and devices Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050801. DOI: 10.1116/1.4799504  0.479
2013 Xi Y, Liu L, Hwang Y, Phillips O, Ren F, Pearton SJ, Kim J, Hsu C, Lo C, Wayne Johnson J. Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032202. DOI: 10.1116/1.4798612  0.461
2013 Hwang YS, Liu L, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Vereyovkin SS, Ermakov VS, Lo CF, Laboutin O, Cao Y, Johnson JW, et al. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4795210  0.433
2013 Douglas EA, Bielejec E, Frenzer P, Yates BR, Pearton SJ, Lo C, Liu L, Kang T, Ren F. Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 021205. DOI: 10.1116/1.4792370  0.426
2013 Liu L, Lo CF, Xi Y, Wang Y, Ren F, Pearton SJ, Kim HY, Kim J, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Tetlak SE, Via GD, Crespo A, et al. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4788904  0.34
2013 Liu L, Lo CF, Xi Y, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773060  0.408
2013 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Lui L, Johnson JW, Kargin NI, Ryzhuk RV. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773057  0.448
2013 Patrick E, Law ME, Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ. Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage Ieee Transactions On Nuclear Science. 60: 4103-4108. DOI: 10.1109/Tns.2013.2286115  0.356
2013 Cheney DJ, Douglas EA, Liu L, Lo CF, Xi YY, Gila BP, Ren F, Horton D, Law ME, Smith DJ, Pearton SJ. Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074019  0.581
2013 Fang JY, Lee GY, Chyi JI, Hsu CP, Kang YW, Fang KC, Kao WL, Yao DJ, Hsu CH, Huang YF, Chen CC, Li SS, Yeh JA, Ren F, Wang YL. Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids Journal of Applied Physics. 114. DOI: 10.1063/1.4833552  0.358
2013 Hung SC, Woon WY, Lan SM, Ren F, Pearton SJ. Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4818671  0.416
2013 Holzworth MR, Rudawski NG, Whiting PG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Patrick E, Law ME. Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4813535  0.397
2013 Kang YW, Lee GY, Chyi JI, Hsu CP, Hsu YR, Hsu CH, Huang YF, Sun YC, Chen CC, Chun Hung S, Ren F, Andrew Yeh J, Wang YL. Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models Applied Physics Letters. 102. DOI: 10.1063/1.4803916  0.491
2013 Schwarz C, Yadav A, Shatkhin M, Flitsiyan E, Chernyak L, Kasiyan V, Liu L, Xi YY, Ren F, Pearton SJ, Lo CF, Johnson JW, Danilova E. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4792240  0.386
2013 Yeh N, Chiu P, Chyi J, Ren F, Pearton SJ. Sb-based semiconductors for low power electronics Journal of Materials Chemistry C. 1: 4616. DOI: 10.1039/C3Tc30585F  0.354
2013 Polyakov AY, Pearton SJ, Frenzer P, Ren F, Liu L, Kim JH. Radiation effects in GaN materials and devices Journal of Materials Chemistry C. 1: 877-887. DOI: 10.1039/C2Tc00039C  0.338
2013 Lo CF, Xi Y, Liu L, Pearton SJ, Doré S, Hsu CH, Dabiran AM, Chow PP, Ren F. Effect of temperature on CO sensing response in air ambient by using zno nanorod-gated AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 176: 708-712. DOI: 10.1016/J.Snb.2012.10.051  0.393
2013 Liu C, Hsu C, Yeh JA, Sun Y, Huang Y, Chu BH, Ren F, Wang Y. Light-actuated water droplet motions on ZnO nanorods Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 19: 245-251. DOI: 10.1007/S00542-012-1562-5  0.531
2012 Jansson T, Clare-Salzler ZJ, Zaveri TD, Mehta S, Dolgova NV, Chu BH, Ren F, Keselowsky BG. Antibacterial effects of zinc oxide nanorod surfaces. Journal of Nanoscience and Nanotechnology. 12: 7132-8. PMID 23035444 DOI: 10.1166/Jnn.2012.6587  0.314
2012 Pearton SJ, Lim WT, Douglas E, Cho H, Ren F. Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors Key Engineering Materials. 521: 141-151. DOI: 10.4028/Www.Scientific.Net/Kem.521.141  0.433
2012 Cheney DJ, Douglas EA, Liu L, Lo CF, Gila BP, Ren F, Pearton SJ. Degradation mechanisms for GaN and GaAs high speed transistors Materials. 5: 2498-2520. DOI: 10.3390/Ma5122498  0.603
2012 Ren F, Pearton SJ, Liu L, Kang T, Douglas EA, Chang CY, Lo C, Cullen DA, Zhou L, Smith DJ. The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1396. DOI: 10.1557/Opl.2012.354  0.428
2012 Cheney D, Deist R, Gila B, Ren F, Whiting P, Navales J, Douglas E, Pearton S. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method Materials Research Society Symposium Proceedings. 1432: 143-149. DOI: 10.1557/Opl.2012.1138  0.565
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Yu S, Karpov, Shcherbachev KD, Lim W. Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.019203Jss  0.366
2012 Chu BH, Chin BD, Baik KH, Stephen JP, Ren F, Jang S. Improved organic light emitting diodes using cryogenic lif/al deposition Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.09Mh04  0.634
2012 Liu C, Hsu C, Yeh JA, Sun Y, Huang Y, Chu BH, Ren F, Wang Y. Pushing or pulling droplets on ZnO nanorods with an UV light Proceedings of Spie. 8463: 846306. DOI: 10.1117/12.929901  0.526
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Liu L, Johnson JW, Lim W, Kolin NG, Veryovkin SS, Ermakov VS. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4766727  0.41
2012 Johnson MR, Cullen DA, Liu L, Sheng Kang T, Ren F, Chang C, Pearton SJ, Jang S, Johnson JW, Smith DJ. Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 062204. DOI: 10.1116/1.4766303  0.638
2012 Wei Chen C, Ren F, Chi G, Hung S, Huang YP, Kim J, Kravchenko II, Pearton SJ. UV ozone treatment for improving contact resistance on graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 060604. DOI: 10.1116/1.4754566  0.342
2012 Jung Y, Hyun Kim S, Kim J, Wang X, Ren F, Jin Choi K, Pearton SJ. GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 30: 050605. DOI: 10.1116/1.4739769  0.47
2012 Lo C, Liu L, Ren F, Pearton SJ, Gila BP, Kim H, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)] Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 043401. DOI: 10.1116/1.4737150  0.563
2012 Hung S, Chang C, Chen CC, Lo CF, Ren F, Pearton SJ, Kravchenko II. SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 041214. DOI: 10.1116/1.4736974  0.375
2012 Chen CW, Ren F, Chi G, Hung SC, Huang YP, Kim J, Kravchenko I, Pearton SJ. Effects of semiconductor processing chemicals on conductivity of graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 040602. DOI: 10.1116/1.4732517  0.447
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Karpov SY, Shcherbachev KD, Kolin NG, Lim W. Metastable centers in AlGaN/AlN/GaN heterostructures Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 41209. DOI: 10.1116/1.4731256  0.397
2012 Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4729285  0.584
2012 Kim H, Lee C, Kim J, Ren F, Pearton SJ. Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 030602. DOI: 10.1116/1.3701711  0.467
2012 Lo C, Liu L, Kang TS, Ren F, Schwarz C, Flitsiyan E, Chernyak L, Kim H, Kim J, Pil Yun S, Laboutin O, Cao Y, Johnson JW, Pearton SJ. Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 031202. DOI: 10.1116/1.3698402  0.486
2012 Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 012202. DOI: 10.1116/1.3676034  0.479
2012 Lo CF, Liu L, Chu BH, Ren F, Pearton SJ, Doré S, Hsu CH, Kim J, Dabiran AM, Chow PP. Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672010  0.521
2012 Lo CF, Liu L, Kang TS, Ren F, Laboutin O, Cao Y, Johnson JW, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Pearton SJ. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3671020  0.422
2012 Kang TS, Wang XT, Lo CF, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kim J. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3664283  0.355
2012 Wang SY, Chang CA, Chang CM, Chen SH, Ren F, Pearton SJ, Chyi J-. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors Applied Physics Letters. 101: 73507. DOI: 10.1063/1.4745208  0.367
2012 Kim BJ, Lee C, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4733981  0.333
2012 Jung Y, Wang X, Kim J, Hyun Kim S, Ren F, Pearton SJ. GaN-based light-emitting diodes on origami substrates Applied Physics Letters. 100. DOI: 10.1063/1.4726123  0.48
2012 Lemaitre MG, Tongay S, Wang X, Venkatachalam DK, Fridmann J, Gila BP, Hebard AF, Ren F, Elliman RG, Appleton BR. Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing Applied Physics Letters. 100. DOI: 10.1063/1.4707383  0.539
2012 Kim H, Lo CF, Liu L, Ren F, Kim J, Pearton SJ. Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies Applied Physics Letters. 100: 012107. DOI: 10.1063/1.3673906  0.348
2012 Cho H, Douglas EA, Gila BP, Craciun V, Lambers ES, Ren F, Pearton SJ. Band offsets in HfO2/InGaZnO4 heterojunctions Applied Physics Letters. 100: 012105. DOI: 10.1063/1.3673905  0.555
2012 Kim H, Lim W, Lee J, Pearton S, Ren F, Jang S. Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks Sensors and Actuators B: Chemical. 164: 64-68. DOI: 10.1016/J.Snb.2012.01.067  0.637
2012 Cheney DJ, Deist R, Gila B, Navales J, Ren F, Pearton SJ. Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping Microelectronics Reliability. 52: 2884-2888. DOI: 10.1016/J.Microrel.2012.08.018  0.571
2012 Whiting PG, Rudawski NG, Holzworth MR, Pearton SJ, Jones KS, Liu L, Kang TS, Ren F. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors Microelectronics Reliability. 52: 2542-2546. DOI: 10.1016/J.Microrel.2012.05.015  0.426
2012 Douglas EA, Chang CY, Gila BP, Holzworth MR, Jones KS, Liu L, Kim J, Jang S, Via GD, Ren F, Pearton SJ. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. 52: 23-28. DOI: 10.1016/J.Microrel.2011.09.018  0.73
2012 Hung ST, Chang CJ, Hsu CH, Chu BH, Lo CF, Hsu CC, Pearton SJ, Holzworth MR, Whiting PG, Rudawski NG, Jones KS, Dabiran A, Chow P, Ren F. SnO 2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications International Journal of Hydrogen Energy. 37: 13783-13788. DOI: 10.1016/J.Ijhydene.2012.03.124  0.448
2012 Jung Y, Wang X, Kim SH, Ren F, Kim J, Pearton SJ. Back Cover: A facile method for flexible GaN-based light-emitting diodes (Phys. Status Solidi RRL 11/2012) Physica Status Solidi (Rrl) - Rapid Research Letters. 6. DOI: 10.1002/Pssr.201290026  0.419
2012 Jung Y, Wang X, Kim SH, Ren F, Kim J, Pearton SJ. A facile method for flexible GaN-based light-emitting diodes Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 421-423. DOI: 10.1002/Pssr.201206374  0.449
2012 Ren F, Pearton SJ. Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio-applications Physica Status Solidi (C). 9: 393-398. DOI: 10.1002/Pssc.201100296  0.325
2011 Pearton SJ, Gila BP, Appleton B, Hays D, Ren F, Fridmann J, Mazarov P. Nanoengineering of Semiconductor Nanowires-Synthesis, Processing and Sensing Applications Journal of Nanoengineering and Nanomanufacturing. 1: 35-49. DOI: 10.1166/Jnan.2011.1009  0.58
2011 Jung Y, Ahn J, Baik KH, Kim D, Pearton SJ, Ren F, Kim J. Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions Journal of the Electrochemical Society. 159: H117-H120. DOI: 10.1149/2.039202Jes  0.341
2011 Douglas EA, Pearton SJ, Poling B, Via GD, Liu L, Ren F. Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation Electrochemical and Solid State Letters. 14. DOI: 10.1149/2.019111Esl  0.349
2011 Cho H, Douglas EA, Scheurmann A, Gila BP, Craciun V, Lambers ES, Pearton SJ, Ren F. Al2O3∕InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy Electrochemical and Solid-State Letters. 14: H431. DOI: 10.1149/2.001111Esl  0.506
2011 Chu BH, Nicolosi J, Lo CF, Strupinski W, Pearton SJ, Ren F. Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors Electrochemical and Solid-State Letters. 14: K43. DOI: 10.1149/1.3589250  0.303
2011 Lo C, Liu L, Kang T, Davies R, Gila BP, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ, Ren F. Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 14: H264. DOI: 10.1149/1.3578388  0.59
2011 Hung SC, Chen CW, Shieh CY, Chi GC, Ren F, Pearton SJ. Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor Proceedings of Spie. 8024. DOI: 10.1117/12.883015  0.418
2011 Liu L, Ren F, Pearton SJ, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Kossler M, Trejo M, Via D, Crespo A. Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3660396  0.397
2011 Fitch RC, Walker DE, Chabak KD, Gillespie JK, Kossler M, Trejo M, Crespo A, Liu L, Kang TS, Lo CF, Ren F, Cheney DJ, Pearton SJ. Comparison of passivation layers for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3656390  0.427
2011 Lo CF, Liu L, Ren F, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3644480  0.389
2011 Liu L, Lo C, Kang T, Ren F, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ. Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 042202. DOI: 10.1116/1.3607601  0.39
2011 Lo CF, Ren F, Pearton SJ, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Reznik VY, Johnson JW. Deep traps and thermal measurements on AlGaN/GaN on Si transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3605304  0.425
2011 Kang TS, Lo CF, Liu L, Finch R, Ren F, Wang XT, Douglas E, Pearton SJ, Hung ST, Chang C. Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 041202. DOI: 10.1116/1.3605298  0.415
2011 Lo CF, Kang TS, Liu L, Ren F, Pearton SJ, Kim J, Jang S, Laboutin O, Cao Y, Johnson JW. Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3593002  0.418
2011 Lo CF, Ren F, Chang CY, Pearton SJ, Chen S-, Chang C-, Wang S-, Chyi J-, Kravchenko II. Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors Journal of Vacuum Science & Technology B. 29: 31205. DOI: 10.1116/1.3589808  0.373
2011 Liu L, Kang TS, Cullen DA, Zhou L, Kim J, Chang CY, Douglas EA, Jang S, Smith DJ, Pearton SJ, Johnson WJ, Ren F. Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 32204. DOI: 10.1116/1.3581078  0.629
2011 Douglas EA, Ren F, Pearton SJ. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 020603. DOI: 10.1116/1.3567183  0.39
2011 Lo CF, Liu L, Chang CY, Ren F, Craciun V, Pearton SJ, Heo YW, Laboutin O, Johnson JW. Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3545811  0.453
2011 Chang CY, Douglas EA, Kim J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Cullen DA, Zhou L, Smith DJ, Jang S, Pearton SJ. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors Ieee Transactions On Device and Materials Reliability. 11: 187-193. DOI: 10.1109/Tdmr.2010.2103314  0.713
2011 Pearton SJ, Chang CY, Chu BH, Lo C, Ren F, Chen W, Guo J. ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications Ieee Journal of Selected Topics in Quantum Electronics. 17: 1092-1101. DOI: 10.1109/Jstqe.2010.2048420  0.304
2011 Chen CW, Hung SC, Yang MD, Yeh CW, Wu CH, Chi GC, Ren F, Pearton SJ. Oxygen sensors made by monolayer graphene under room temperature Applied Physics Letters. 99: 243502. DOI: 10.1063/1.3668105  0.308
2011 Lo CF, Chu BH, Pearton SJ, Dabiran A, Chow PP, Doré S, Hung SC, Chen CW, Ren F. Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3647561  0.395
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 98: 242110. DOI: 10.1063/1.3600340  0.575
2011 Holzworth MR, Rudawski NG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Johnson JW. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 98. DOI: 10.1063/1.3569715  0.363
2011 Chu BH, Lo C, Nicolosi J, Chang C, Chen V, Strupinski W, Pearton S, Ren F. Hydrogen detection using platinum coated graphene grown on SiC Sensors and Actuators B: Chemical. 157: 500-503. DOI: 10.1016/J.Snb.2011.05.007  0.357
2011 Douglas EA, Chang CY, Cheney DJ, Gila BP, Lo CF, Lu L, Holzworth R, Whiting P, Jones K, Via GD, Kim J, Jang S, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress Microelectronics Reliability. 51: 207-211. DOI: 10.1016/J.Microrel.2010.09.024  0.701
2011 Chu BH, Chang CY, Kroll K, Denslow N, Wang YL, Pearton SJ, Lin J, Dabiran AM, Wowchak AM, Cui B, Chow PP, Johnson JW, Rajagopal P, Roberts JC, Piner EL, ... ... Ren F, et al. Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2486-2488. DOI: 10.1002/Pssc.201001171  0.564
2010 Lee J, Wang YL, Ren F, Lele TP. Stamp wound assay for studying coupled cell migration and cell debris clearance. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 16672-6. PMID 20961056 DOI: 10.1021/La103542Y  0.464
2010 Chu BH, Kang BS, Hung SC, Chen KH, Ren F, Sciullo A, Gila BP, Pearton SJ. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate. Journal of Diabetes Science and Technology. 4: 171-9. PMID 20167182 DOI: 10.1177/193229681000400122  0.558
2010 Chu BH, Wang YL, Chen KH, Chang CY, Lo CF, Pearton SJ, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Kroll K, Denslow N, Dabiran A, Chow PP, Johnson JW, ... ... Ren F, et al. AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1166/Nnl.2010.1068  0.333
2010 Jung Y, Baik KH, Ren F, Pearton SJ, Kim J. Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates Journal of the Electrochemical Society. 157: H676. DOI: 10.1149/1.3384713  0.485
2010 Ko G, Kim H, Ren F, Pearton SJ, Kim J. Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene Electrochemical and Solid-State Letters. 13: K32. DOI: 10.1149/1.3290777  0.466
2010 Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, et al. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1044-1047. DOI: 10.1116/1.3491038  0.725
2010 Lo CF, Chang CY, Chu BH, Kim H, Kim J, Cullen DA, Zhou L, Smith DJ, Pearton SJ, Dabiran A, Cui B, Chow PP, Jang S, Ren F. Proton irradiation effects on AlN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L47-L51. DOI: 10.1116/1.3482335  0.63
2010 Khanna R, Douglas EA, Norton DP, Pearton SJ, Ren F. Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L43-L46. DOI: 10.1116/1.3467507  0.415
2010 Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 376-379. DOI: 10.1116/1.3368467  0.605
2010 Chen KH, Chang CY, Leu LC, Lo CF, Chu BH, Pearton SJ, Ren F. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 365-370. DOI: 10.1116/1.3359603  0.393
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Improvement in bias stability of amorphous- InGaZn O4 thin film transistors with Si Ox passivation layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 28: 116-119. DOI: 10.1116/1.3276774  0.412
2010 Lo CF, Chang CY, Pearton SJ, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F. Passivation of AlN∕GaN high electron mobility transistor using ozone treatment Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 52-55. DOI: 10.1116/1.3271333  0.407
2010 Kim HY, Kim JH, Ren F, Jang S. Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes Journal of Vacuum Science & Technology B. 28: 27-29. DOI: 10.1116/1.3268136  0.615
2010 Chu BH, Kang BS, Chang CY, Ren F, Goh A, Sciullo A, Wu W, Lin J, Gila BP, Pearton SJ, Johnson JW, Piner EL, Linthicum KJ. Wireless detection system for glucose and pH sensing in exhaled breath condensate using A1GaN/GaN high electron mobility transistors Ieee Sensors Journal. 10: 64-70. DOI: 10.1109/Jsen.2009.2035213  0.537
2010 Wright JS, Lim W, Norton DP, Pearton SJ, Ren F, Johnson JL, Ural A. Nitride and oxide semiconductor nanostructured hydrogen gas sensors Semiconductor Science and Technology. 25: 024002. DOI: 10.1088/0268-1242/25/2/024002  0.372
2010 Baik KH, Seo YG, Kim J, Hwang S, Lim W, Chang CY, Pearton SJ, Ren F, Jang S. Ohmic contact properties of non-polara-plane GaN films onr-plane sapphire substrates Journal of Physics D: Applied Physics. 43: 295102. DOI: 10.1088/0022-3727/43/29/295102  0.622
2010 Lo CF, Kang TS, Liu L, Chang CY, Pearton SJ, Kravchenko II, Laboutin O, Johnson JW, Ren F. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure Applied Physics Letters. 97. DOI: 10.1063/1.3533381  0.373
2010 Zhou L, Chang CY, Pearton SJ, Ren F, Dabiran A, Smith DJ. TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures Journal of Applied Physics. 108: 84513. DOI: 10.1063/1.3501106  0.426
2010 Lo CF, Chang CY, Chu BH, Pearton SJ, Dabiran A, Chow PP, Ren F. Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors Applied Physics Letters. 96: 232106. DOI: 10.1063/1.3454279  0.341
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates Applied Physics Letters. 96. DOI: 10.1063/1.3309753  0.434
2010 Chu BH, Chang CY, Kroll K, Denslow N, Wang Y, Pearton SJ, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F. Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 96: 013701. DOI: 10.1063/1.3279159  0.569
2010 Hung S, Nafday OA, Haaheim JR, Ren F, Chi GC, Pearton SJ. Dip Pen Nanolithography of Conductive Silver Traces The Journal of Physical Chemistry C. 114: 9672-9677. DOI: 10.1021/Jp101505K  0.318
2010 Chen CW, Pan CJ, Tsao FC, Liu YL, Kuo CW, Kuo CH, Chi GC, Chen PH, Lai WC, Hsueh TH, Tun CJ, Chang CY, Pearton SJ, Ren F. Catalyst-free ZnO nanowires grown on a-plane GaN Vacuum. 84: 803-806. DOI: 10.1016/J.Vacuum.2009.10.043  0.372
2010 Wang Y, Chu B, Chang C, Lo C, Pearton S, Dabiran A, Chow P, Ren F. Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors Sensors and Actuators B: Chemical. 146: 349-352. DOI: 10.1016/J.Snb.2010.02.026  0.569
2010 Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J, Norton DP. Recent advances in wide bandgap semiconductor biological and gas sensors Progress in Materials Science. 55: 1-59. DOI: 10.1016/J.Pmatsci.2009.08.003  0.561
2010 Wang Y, Ren F, Lim W, Pearton S, Baik KH, Hwang S, Gon Seo Y, Jang S. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes Current Applied Physics. 10: 1029-1032. DOI: 10.1016/J.Cap.2009.12.034  0.707
2010 Chang CY, Lo CF, Ren F, Pearton SJ, Kravchenko II, Dabiran AM, Cui B, Chow PP. Normally-on/off AlN/GaN high electron mobility transistors Physica Status Solidi (C). 7: 2415-2418. DOI: 10.1002/Pssc.200983901  0.397
2009 Anderson T, Ren F, Pearton S, Kang BS, Wang HT, Chang CY, Lin J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94. PMID 22408548 DOI: 10.3390/S90604669  0.699
2009 Wang Y, Chu BH, Chen KH, Chang C, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungan CF, Pearton SJ, Johnson JW, Ren F. Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-10  0.563
2009 Wang Y, Chu B, Chang C, Chen KH, Zhang Y, Sun Q, Han J, Pearton S, Ren F. High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-06  0.602
2009 Chu BH, Lin H, Gwo S, Wang Y, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Ren F. Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-05  0.561
2009 Hung S, Chu BH, Chang C, Lo CF, Chen KH, Pearton SJ, Dabiran A, Chow PP, Chi GC, Ren F. Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-03  0.362
2009 Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J. Recent Advances in Wide Bandgap Semiconductor Biological and Gas Sensors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-01  0.561
2009 Cheney D, Gila B, Douglas EA, Ren F, Pearton S. A Comprehensive Approach to HEMT Reliability Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-03  0.512
2009 Lugo FJ, Kim HS, Pearton SJ, Abernathy CR, Gila BP, Norton DP, Wang YL, Ren F. Rectifying ZnO:Ag∕ZnO:Ga Thin-Film Junctions Electrochemical and Solid-State Letters. 12: H188. DOI: 10.1149/1.3097392  0.605
2009 Kim H, Ren F, Pearton SJ, Kim J. Self-Annealing in Neutron-Irradiated AlGaN∕GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 12: H173. DOI: 10.1149/1.3082498  0.516
2009 Lo CF, Kim H, Kim J, Chen S, Wang S, Chyi J, Chou BY, Chen KH, Wang YL, Chang CY, Pearton SJ, Kravchenko LI, Jang S, Ren F. Proton irradiation effects on Sb-based heterojunction bipolar transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L33. DOI: 10.1116/1.3246405  0.605
2009 Chen KH, Ren F, Pais A, Xie H, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2166-2169. DOI: 10.1116/1.3212931  0.581
2009 Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W. Transparent dual-gate InGaZnO thin film transistors: Or gate operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2128-2131. DOI: 10.1116/1.3196787  0.427
2009 Wright JS, Lim W, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Pd-catalyzed hydrogen sensing with InN nanobelts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L8. DOI: 10.1116/1.3125267  0.54
2009 Lim W, Jang JH, Kim S-, Norton DP, Craciun V, Pearton SJ, Ren F, Chen H. Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors Journal of Vacuum Science & Technology B. 27: 126-129. DOI: 10.1116/1.3058717  0.372
2009 Davies RP, Abernathy CR, Pearton SJ, Norton DP, Ivill MP, Ren F. REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO Chemical Engineering Communications. 196: 1030-1053. DOI: 10.1080/00986440902896956  0.342
2009 Herrero AM, Gila BP, Gerger A, Scheuermann A, Davies R, Abernathy CR, Pearton SJ, Ren F. Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105. DOI: 10.1063/1.3236568  0.618
2009 Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Applied Physics Letters. 95: 082110. DOI: 10.1063/1.3216576  0.712
2009 Chang CY, Pearton SJ, Lo CF, Ren F, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP. Development of enhancement mode AlN/GaN high electron mobility transistors Applied Physics Letters. 94: 263505. DOI: 10.1063/1.3168648  0.374
2009 Lan YL, Lin HC, Liu HH, Lee GY, Ren F, Pearton SJ, Chang MN, Chyi JI. Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters. 94. DOI: 10.1063/1.3155195  0.336
2009 Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, ... Ren F, et al. Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94. DOI: 10.1063/1.3153130  0.578
2009 Wang Y, Ren F, Zhang U, Sun Q, Yerino CD, Ko TS, Cho YS, Lee IH, Han J, Pearton SJ. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes Applied Physics Letters. 94: 212108. DOI: 10.1063/1.3148369  0.589
2009 Lim W, Douglas EA, Kim S-, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. High mobility InGaZnO4 thin-film transistors on paper Applied Physics Letters. 94: 72103. DOI: 10.1063/1.3086394  0.423
2009 Hung SC, Chou BH, Chang CY, Lo CF, Chen KH, Wang YL, Pearton SJ, Dabiran A, Chow PP, Chi GC, Ren F. Minipressure sensor using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94: 43903. DOI: 10.1063/1.3072606  0.356
2009 Pan C, Chen J, Chi G, Chou B, Pong B, Ren F, Chang C, Pearton S. Optical investigation of nitrogen ion implanted bulk ZnO Vacuum. 83: 1073-1075. DOI: 10.1016/J.Vacuum.2009.02.002  0.312
2009 Huang P, Chen C, Chen J, Chi G, Pan C, Kuo C, Chen L, Hsu C, Chen K, Hung S, Chang C, Pearton S, Ren F. Optical and structural properties of Mg-ion implanted GaN nanowires Vacuum. 83: 797-800. DOI: 10.1016/J.Vacuum.2008.07.009  0.341
2009 Wang Y, Chu B, Chang C, Chen K, Zhang Y, Sun Q, Han J, Pearton S, Ren F. Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes Sensors and Actuators B: Chemical. 142: 175-178. DOI: 10.1016/J.Snb.2009.07.040  0.569
2009 Wright J, Lim W, Gila B, Pearton S, Johnson JL, Ural A, Ren F. Hydrogen sensing with Pt-functionalized GaN nanowires Sensors and Actuators B: Chemical. 140: 196-199. DOI: 10.1016/J.Snb.2009.04.009  0.58
2009 Pan C, Chen C, Chen J, Huang P, Chi G, Chang C, Ren F, Pearton S. Optical and structural properties of Eu-diffused and doped ZnO nanowires Applied Surface Science. 256: 187-190. DOI: 10.1016/J.Apsusc.2009.07.108  0.368
2009 Hung SC, Huang PJ, Chan CE, Uen WY, Ren F, Pearton SJ, Yang TN, Chiang CC, Lan SM, Chi GC. Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition Applied Surface Science. 255: 6809-6813. DOI: 10.1016/J.Apsusc.2009.02.088  0.396
2008 Lee J, Kang BS, Hicks B, Chancellor TF, Chu BH, Wang HT, Keselowsky BG, Ren F, Lele TP. The control of cell adhesion and viability by zinc oxide nanorods. Biomaterials. 29: 3743-9. PMID 18550161 DOI: 10.1016/J.Biomaterials.2008.05.029  0.65
2008 Pearton SJ, Kang BS, Gila BP, Norton DP, Kryliouk O, Ren F, Heo YW, Chang CY, Chi GC, Wang WM, Chen LC. GaN, ZnO and InN nanowires and devices. Journal of Nanoscience and Nanotechnology. 8: 99-110. PMID 18468056 DOI: 10.1166/Jnn.2008.N01  0.58
2008 Pearton SJ, Lim WT, Wang YL, Shoo K, Norton D, Lee JW, Ren F, Zavada JM. Transparent Thin Film Transistors Based on InZnO for Flexible Electronics Key Engineering Materials. 380: 99-109. DOI: 10.4028/Www.Scientific.Net/Kem.380.99  0.386
2008 Pearton S, Voss L, Khanna R, Lim W, Stafford L, Ren F, Dabiran A, Osinsky A. High Temperature Stable Contacts for GaN HEMTs and LEDs Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A01-04  0.443
2008 Hung SC, Wang YL, Hicks B, Pearton SJ, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC. Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection Electrochemical and Solid-State Letters. 11: H241. DOI: 10.1149/1.2938726  0.367
2008 Kim HY, Kim J, Yun SP, Kim KR, Anderson TJ, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons Journal of the Electrochemical Society. 155: H513-H515. DOI: 10.1149/1.2917256  0.37
2008 Lim W, Kim S, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering Journal of the Electrochemical Society. 155: H383. DOI: 10.1149/1.2903294  0.63
2008 Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes Electrochemical and Solid-State Letters. 11: H88. DOI: 10.1149/1.2837657  0.588
2008 Wang Y, Covert LN, Anderson TJ, Lim W, Lin J, Pearton SJ, Norton DP, Zavada JM, Ren F. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Electrochemical and Solid-State Letters. 11: H60. DOI: 10.1149/1.2825474  0.616
2008 Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element Electrochemical and Solid-State Letters. 11: J19. DOI: 10.1149/1.2824500  0.592
2008 Lim W, Kim S-, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. Stable room temperature deposited amorphous InGaZnO4 thin film transistors Journal of Vacuum Science & Technology B. 26: 959-962. DOI: 10.1116/1.2917075  0.617
2008 Khanna R, Stafford L, Voss LF, Pearton SJ, Wang HT, Anderson T, Hung SC, Ren F. Aging and stability of GaN high electron mobility transistors and light-emitting diodes with TiB2- and Ir-based contacts Ieee Transactions On Device and Materials Reliability. 8: 272-276. DOI: 10.1109/Tdmr.2007.915005  0.402
2008 Wang Y, Ren F, Kim HS, Norton DP, Pearton SJ. Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes Ieee Journal of Selected Topics in Quantum Electronics. 14: 1048-1052. DOI: 10.1109/Jstqe.2008.919736  0.613
2008 Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Tseng Y, Pearton SJ, Ramage J, Hooten D, Dabiran A, Chow PP, Ren F. Botulinum toxin detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 93. DOI: 10.1063/1.3056612  0.568
2008 Lim W, Douglas EA, Kim S, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape Applied Physics Letters. 93: 252103. DOI: 10.1063/1.3054167  0.442
2008 Lim W, Wright JS, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts Applied Physics Letters. 93: 202109. DOI: 10.1063/1.3033548  0.576
2008 Chu BH, Leu LC, Chang CY, Lugo F, Norton D, Lele T, Keselowsky B, Pearton SJ, Ren F. Conformable coating of SiO2 on hydrothermally grown ZnO nanorods Applied Physics Letters. 93. DOI: 10.1063/1.3033407  0.366
2008 Wang HT, Nafday OA, Haaheim JR, Tevaarwerk E, Amro NA, Sanedrin RG, Chang CY, Ren F, Pearton SJ. Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks Applied Physics Letters. 93. DOI: 10.1063/1.2995859  0.653
2008 Lim W, Jang JH, Kim S, Norton DP, Craciun V, Pearton SJ, Ren F, Shen H. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates Applied Physics Letters. 93: 082102. DOI: 10.1063/1.2975959  0.412
2008 Lim W, Wright JS, Gila BP, Johnson JL, Ural A, Anderson T, Ren F, Pearton SJ. Room temperature hydrogen detection using Pd-coated GaN nanowires Applied Physics Letters. 93. DOI: 10.1063/1.2975173  0.591
2008 Chu BH, Kang BS, Ren F, Chang CY, Wang YL, Pearton SJ, Glushakov AV, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzyme-based lactic acid detection using AlGaN∕GaN high electron mobility transistors with ZnO nanorods grown on the gate region Applied Physics Letters. 93: 042114. DOI: 10.1063/1.2966158  0.345
2008 Kang BS, Wang HT, Ren F, Pearton SJ. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 104: 031101. DOI: 10.1063/1.2959429  0.355
2008 Chang CY, Kang BS, Wang HT, Ren F, Wang YL, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. CO2 detection using polyethylenimine/starch functionalized AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 92: 232102. DOI: 10.1063/1.2937126  0.367
2008 Tsao FC, Chen JY, Kuo CH, Chi GC, Pan CJ, Huang PJ, Tun CJ, Pong BJ, Hsueh TH, Chang CY, Pearton SJ, Ren F. Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) Applied Physics Letters. 92. DOI: 10.1063/1.2936090  0.36
2008 Hung SC, Wang YL, Hicks B, Pearton SJ, Dennis DM, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC. Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 92: 193903. DOI: 10.1063/1.2927372  0.342
2008 Chen KH, Kang BS, Wang HT, Lele TP, Ren F, Wang YL, Chang CY, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. C-erbB-2 sensing using AlGaNGaN high electron mobility transistors for breast cancer detection Applied Physics Letters. 92. DOI: 10.1063/1.2926656  0.664
2008 Chen JY, Chi GC, Huang PJ, Chen MY, Hung SC, Nien CH, Chen MC, Lan SM, Pong BJ, Pan CJ, Tun CJ, Ren F, Chang CY, Pearton SJ. Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy Applied Physics Letters. 92: 162103. DOI: 10.1063/1.2916708  0.315
2008 Lim W, Norton DP, Jang JH, Craciun V, Pearton SJ, Ren F. Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films Applied Physics Letters. 92: 122102. DOI: 10.1063/1.2902322  0.386
2008 Kim HS, Lugo F, Pearton SJ, Norton DP, Wang Y, Ren F. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition Applied Physics Letters. 92: 112108. DOI: 10.1063/1.2900711  0.586
2008 Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Dielectric passivation effects on ZnO light emitting diodes Applied Physics Letters. 92: 112101. DOI: 10.1063/1.2898709  0.595
2008 Lim W, Norton DP, Pearton SJ, Wang XJ, Chen WM, Buyanova IA, Osinsky A, Dong JW, Hertog B, Thompson AV, Schoenfeld WV, Wang YL, Ren F. Migration and luminescence enhancement effects of deuterium in ZnOZnCdO quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2836946  0.34
2008 Kim H, Lugo F, Pearton S, Norton D, Ren F. The effects of buffer growth parameters on heteroepitaxial ZnO films grown by pulsed laser deposition Vacuum. 82: 1259-1263. DOI: 10.1016/J.Vacuum.2008.02.005  0.363
2008 Chen KH, Wang HW, Kang BS, Chang CY, Wang YL, Lele TP, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 134: 386-389. DOI: 10.1016/J.Snb.2008.05.012  0.353
2008 Arjunan AC, Singh D, Wang HT, Ren F, Kumar P, Singh RK, Pearton SJ. Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing Applied Surface Science. 255: 3085-3089. DOI: 10.1016/J.Apsusc.2008.08.096  0.411
2008 Hung SC, Huang PJ, Chan CE, Uen WY, Ren F, Pearton SJ, Yang TN, Chiang CC, Lan SM, Chi GC. Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition Applied Surface Science. 255: 3016-3018. DOI: 10.1016/J.Apsusc.2008.08.086  0.416
2008 Anderson TJ, Wang HT, Kang BS, Ren F, Pearton SJ, Osinsky A, Dabiran A, Chow PP. Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes Applied Surface Science. 255: 2524-2526. DOI: 10.1016/J.Apsusc.2008.07.173  0.348
2008 Erie J, Li Y, Ivill M, Kim H, Pearton S, Gila B, Norton D, Ren F. Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition Applied Surface Science. 254: 5941-5945. DOI: 10.1016/J.Apsusc.2008.03.161  0.574
2008 Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 Applied Surface Science. 254: 5211-5215. DOI: 10.1016/J.Apsusc.2008.02.028  0.598
2008 Voss LF, Stafford L, Gila BP, Pearton SJ, Ren F. Ir-based diffusion barriers for Ohmic contacts to p-GaN Applied Surface Science. 254: 4134-4138. DOI: 10.1016/J.Apsusc.2007.12.046  0.616
2008 Lim W, Wang Y, Ren F, Norton D, Kravchenko I, Zavada J, Pearton S. Indium zinc oxide thin films deposited by sputtering at room temperature Applied Surface Science. 254: 2878-2881. DOI: 10.1016/J.Apsusc.2007.10.032  0.585
2008 Lim W, Craciun V, Siebein K, Gila B, Norton D, Pearton S, Ren F. Surface and bulk thermal annealing effects on ZnO crystals Applied Surface Science. 254: 2396-2400. DOI: 10.1016/J.Apsusc.2007.09.066  0.591
2008 Lim W, Sadik P, Norton D, Pearton S, Ren F. Dry etching of CuCrO2 thin films Applied Surface Science. 254: 2359-2363. DOI: 10.1016/J.Apsusc.2007.09.034  0.374
2008 Johnson JL, Choi Y, Ural A, Lim W, Wright J, Gila B, Ren F, Pearton S. Growth and Characterization of GaN Nanowires for Hydrogen Sensors Journal of Electronic Materials. 38: 490-494. DOI: 10.1007/S11664-008-0596-Z  0.617
2008 Pearton S, Lim W, Wright J, Tien L, Kim H, Norton D, Wang H, Kang B, Ren F, Jun J, Lin J, Osinsky A. ZnO and Related Materials for Sensors and Light-Emitting Diodes Journal of Electronic Materials. 37: 1426-1432. DOI: 10.1007/S11664-008-0416-5  0.346
2008 Tien LC, Pearton SJ, Norton DP, Ren F. Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition Journal of Materials Science. 43: 6925-6932. DOI: 10.1007/S10853-008-2988-0  0.35
2008 Kim H, Pearton S, Norton D, Ren F. Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer Applied Physics A. 91: 255-259. DOI: 10.1007/S00339-008-4427-0  0.373
2008 Kim H, Erie J, Pearton S, Norton D, Ren F. Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture Applied Physics A. 91: 251-254. DOI: 10.1007/S00339-008-4426-1  0.32
2008 Tien L, Pearton S, Norton D, Ren F. Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition Applied Physics A. 91: 29-32. DOI: 10.1007/S00339-007-4378-X  0.333
2008 Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644  0.608
2008 Kim HS, Lugo F, Pearton SJ, Norton DP, Ren F. Properties of post-annealed ZnO films grown with O3 Physica Status Solidi (a). 205: 1631-1635. DOI: 10.1002/Pssa.200824015  0.306
2008 Erie JM, Ivill M, Kim HS, Pearton SJ, Gila B, Ren F, Norton DP. Acceptor state formation in arsenic-doped ZnO films grown using ozone Physica Status Solidi (a). 205: 1647-1652. DOI: 10.1002/Pssa.200723663  0.561
2007 Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Selective detection of Hg(II) ions from Cu(II) and Pb(II) using AlGaNGaN high electron mobility transistors Electrochemical and Solid-State Letters. 10: 150-153. DOI: 10.1149/1.2778997  0.304
2007 Lim W, Wang Y, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ. Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity Electrochemical and Solid-State Letters. 10: H267. DOI: 10.1149/1.2750441  0.573
2007 Khanna R, Gila BP, Stafford L, Pearton SJ, Ren F, Kravchenko II. Ir-Based Schottky and Ohmic Contacts on n-GaN Journal of the Electrochemical Society. 154: H584. DOI: 10.1149/1.2734102  0.61
2007 Lim WT, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Reaction-Limited Wet Etching of CuCrO[sub 2] Electrochemical and Solid-State Letters. 10: H178. DOI: 10.1149/1.2719551  0.368
2007 Jang S, Kang BS, Ren F, Emanetoglu NW, Shen H, Chang WH, Gila BP, Hlad M, Pearton SJ. Comparison of E-beam and sputter-deposited ITO films for 1.55 μm metal-semiconductor-metal photodetector applications Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2667428  0.696
2007 Khanna R, Stafford L, Pearton SJ, Wang HT, Ren F, Westermann R, Johnson D, Constantine C. Reduction of dry etch damage to GaAs using pulse-time modulated plasmas Electrochemical and Solid-State Letters. 10: 139-141. DOI: 10.1149/1.2666657  0.373
2007 Wright JS, Khanna R, Stafford L, Gila BP, Norton DP, Pearton SJ, Ren F, Kravchenko II. Ir∕Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO Journal of the Electrochemical Society. 154: H161. DOI: 10.1149/1.2424414  0.61
2007 Lee CW, Choi H, Oh MK, Ahn DJ, Kim J, Kim J-, Ren F, Pearton SJ. ZnO-Based Cyclodextrin Sensor Using Immobilized Polydiacetylene Vesicles Electrochemical and Solid State Letters. 10. DOI: 10.1149/1.2364306  0.449
2007 Pearton SJ, Kang BS, Tien LC, Norton DP, Heo YW, Ren F. ZnO-BASED NANOWIRES Nano. 2: 201-211. DOI: 10.1142/S179329200700060X  0.338
2007 Ochoa E, Nelson T, Bedford R, Ehret J, Starman L, Harvey M, Anderson T, Ren F. Demonstration of hybrid A1xGa1-x-As-polysilicon microelectromechanical tunable filter Ieee Photonics Technology Letters. 19: 381-383. DOI: 10.1109/Lpt.2007.891942  0.31
2007 Kang BS, Wang HT, Ren F, Pearton SJ, Morey TE, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 252103. DOI: 10.1063/1.2825574  0.683
2007 Wang HT, Kang BS, Ren F, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 222101. DOI: 10.1063/1.2815931  0.667
2007 Kim HS, Pearton SJ, Norton DP, Ren F. Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition Journal of Applied Physics. 102: 104904. DOI: 10.1063/1.2815676  0.361
2007 Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K. Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN Applied Physics Letters. 91: 92107. DOI: 10.1063/1.2776866  0.345
2007 Kang BS, Wang HT, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Prostate specific antigen detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 91. DOI: 10.1063/1.2772192  0.664
2007 Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson WJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 91. DOI: 10.1063/1.2764554  0.67
2007 Voss LF, Stafford L, Wright JS, Pearton SJ, Ren F, Kravchenko II. W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN Applied Physics Letters. 91. DOI: 10.1063/1.2762280  0.391
2007 Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region Applied Physics Letters. 91: 012110. DOI: 10.1063/1.2754637  0.73
2007 Wang H, Anderson TJ, Kang BS, Ren F, Li C, Low Z, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts Applied Physics Letters. 90: 252109. DOI: 10.1063/1.2751107  0.765
2007 Stafford L, Voss LF, Pearton SJ, Wang HT, Ren F. Improved long-term thermal stability of InGaNGaN multiple quantum well light-emitting diodes using Ti B2 - And Ir-based p -Ohmic contacts Applied Physics Letters. 90. DOI: 10.1063/1.2748306  0.373
2007 Wang Y, Ren F, Lim W, Norton DP, Pearton SJ, Kravchenko II, Zavada JM. Room temperature deposited indium zinc oxide thin film transistors Applied Physics Letters. 90: 232103. DOI: 10.1063/1.2746084  0.61
2007 Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572  0.612
2007 Sadik PW, Pearton SJ, Norton DP, Lambers E, Ren F. Functionalizing Zn- and O-terminated ZnO with thiols Journal of Applied Physics. 101: 104514. DOI: 10.1063/1.2736893  0.31
2007 Lim WT, Stafford L, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers Applied Physics Letters. 90: 142101. DOI: 10.1063/1.2719150  0.389
2007 Wang YL, Ren F, Kim HS, Pearton SJ, Norton DP. Incorporation and drift of hydrogen at low temperatures in ZnO Applied Physics Letters. 90: 092116. DOI: 10.1063/1.2711201  0.362
2007 Kang BS, Pearton SJ, Ren F. Low temperature (<100°C) patterned growth of ZnO nanorod arrays on Si Applied Physics Letters. 90: 083104. DOI: 10.1063/1.2709631  0.37
2007 Tien L, Norton D, Gila B, Pearton S, Wang H, Kang B, Ren F. Detection of hydrogen with SnO2-coated ZnO nanorods Applied Surface Science. 253: 4748-4752. DOI: 10.1016/J.Apsusc.2006.10.056  0.774
2007 Tien L, Norton D, Pearton S, Wang H, Ren F. Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy Applied Surface Science. 253: 4620-4625. DOI: 10.1016/J.Apsusc.2006.10.012  0.673
2007 Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090  0.803
2007 Herrero AM, Gerger A, Gila B, Pearton S, Wang H, Jang S, Anderson T, Chen J, Kang B, Ren F, Shen H, LaRoche JR, Smith KV. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K Applied Surface Science. 253: 3298-3302. DOI: 10.1016/J.Apsusc.2006.07.032  0.806
2007 Chang C, Pearton SJ, Huang P, Chi G, Wang H, Chen J, Ren F, Chen K, Chen L. Control of nucleation site density of GaN nanowires Applied Surface Science. 253: 3196-3200. DOI: 10.1016/J.Apsusc.2006.07.007  0.694
2007 Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 Journal of Electronic Materials. 37: 161-166. DOI: 10.1007/S11664-007-0334-Y  0.592
2007 Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y  0.604
2007 Kang B, Wang H, Ren F, Hlad M, Gila B, Abernathy C, Pearton S, Li C, Low Z, Lin J, Johnson J, Rajagopal P, Roberts J, Piner E, Linthicum K. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors Journal of Electronic Materials. 37: 550-553. DOI: 10.1007/S11664-007-0298-Y  0.545
2007 Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/S11664-007-0277-3  0.604
2007 Voss LF, Stafford L, Thaler GT, Abernathy CR, Pearton SJ, Chen JJ, Ren F. Annealing and measurement temperature dependence of W 2B- and W 2B 5-based rectifying contacts to p-GaN Journal of Electronic Materials. 36: 384-390. DOI: 10.1007/S11664-006-0054-8  0.432
2007 Wright J, Stafford L, Gila B, Norton D, Pearton S, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO Journal of Electronic Materials. 36: 488-493. DOI: 10.1007/S11664-006-0039-7  0.761
2007 Khanna R, Stafford L, Pearton SJ, Anderson TJ, Ren F, Kravchenko II, Dabiran A, Osinsky A, Lee JY, Lee KY, Kim JH. Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors Journal of Electronic Materials. 36: 379-383. DOI: 10.1007/S11664-006-0036-X  0.375
2007 Allums K, Hlad M, Gerger A, Gila B, Abernathy C, Pearton S, Ren F, Dwivedi R, Fogarty T, Wilkins R. Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes Journal of Electronic Materials. 36: 519-523. DOI: 10.1007/S11664-006-0035-Y  0.621
2007 Bang J, Kim K, Mok S, Ren F, Pearton SJ, Baik KH, Kim SH, Kim J, Shin K. Simple fabrication of nanoporous films on ZnO for enhanced light emission Physica Status Solidi (a) Applications and Materials Science. 204: 3417-3422. DOI: 10.1002/Pssa.200723127  0.321
2007 Lee GS, Lee C, Choi H, Ahn DJ, Kim J, Gila BP, Abernathy CR, Pearton SJ, Ren F. Polydiacetylene-based selective NH3gas sensor using Sc2O3/GaN structures Physica Status Solidi (a). 204: 3556-3561. DOI: 10.1002/Pssa.200723066  0.549
2007 Chang T, Wu W, Lin J, Jang S, Ren F, Pearton S, Fitch R, Gillespie J. Analysis and design of AlGaN/GaN HEMT resistive mixers Microwave and Optical Technology Letters. 49: 1152-1154. DOI: 10.1002/Mop.22390  0.606
2006 Kang B, Wang H, Tien LC, Ren F, Gila B, Norton D, Abernathy C, Lin J, Pearton S. Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors Sensors. 6: 643-666. DOI: 10.3390/S6060643  0.768
2006 Pearton SJ, Norton DP, Heo YW, Tien LC, Ivill MP, Li Y, Kang BS, Ren F, Kelly J, Hebard AF. ZnO spintronics and nanowire devices Journal of Electronic Materials. 35: 862-868. DOI: 10.1557/Proc-829-B8.5  0.452
2006 Pearton SJ, Tien LC, Kim HS, Norton DP, Chen JJ, Wang HT, Kang BS, Ren F, Lim WT, Wright J, Khanna R, Voss LF, Stafford L, Jun J, Lin J. Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K01-05  0.343
2006 Anderson T, Ren F, Voss L, Hlad M, Gila BP, Pearton S, Covert L, Lin J, Thuret J, Lahreche H, Bove P. AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I16-02  0.624
2006 Kang BS, Pearton SJ, Chen JJ, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors Materials Research Society Symposium Proceedings. 955: 88-93. DOI: 10.1557/Proc-0955-I14-06  0.307
2006 Stodilka D, Gerger AP, Hlad M, Kumar P, Gila BP, Singh R, Abernathy CR, Pearton SJ, Ren F. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B14-03  0.607
2006 Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal Considerations in Design of Vertically Integrated Si∕GaN∕SiC Multichip Modules Journal of the Electrochemical Society. 153: G906. DOI: 10.1149/1.2234734  0.347
2006 Voss L, Pearton SJ, Ren F, Bove P, Lahreche H, Thuret J. Electrical Performance of GaN Schottky Rectifiers on Si Substrates Journal of the Electrochemical Society. 153: G681. DOI: 10.1149/1.2202146  0.399
2006 Wright JS, Khanna R, Norton DP, Pearton SJ, Ren F, Kravchenko II. Thermally Stable TiB2 Ohmic Contacts on n-ZnO Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2184488  0.413
2006 Chen JJ, Anderson TJ, Jang S, Ren F, Li YJ, Kim H, Gila BP, Norton DP, Pearton SJ. Ti∕Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 153: G462. DOI: 10.1149/1.2184047  0.741
2006 Chang C, Lan T, Chi G, Chen L, Chen K, Chen J, Jang S, Ren F, Pearton SJ. Effect of Ozone Cleaning and Annealing on Ti ∕ Al ∕ Pt ∕ Au Ohmic Contacts on GaN Nanowires Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2179187  0.652
2006 Li Y, Kim H, Erie J, Ren F, Pearton SJ, Norton DP. Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin films grown pulsed laser deposition Proceedings of Spie. 6337: 633708. DOI: 10.1117/12.694798  0.339
2006 Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730  0.617
2006 Anderson T, Ren F, Pearton SJ, Mastro MA, Holm RT, Henry RL, Eddy CR, Lee JY, Lee KY, Kim J. Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2246-2249. DOI: 10.1116/1.2335435  0.319
2006 Wang H, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Improved Au Schottky contacts on GaAs using cryogenic metal deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1799. DOI: 10.1116/1.2213270  0.815
2006 Khanna R, Pearton SJ, Ren F, Kravchenko II. Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaN Journal of Vacuum Science & Technology B. 24: 744-749. DOI: 10.1116/1.2181578  0.397
2006 Jang S, Chen JJ, Ren F, Yang H, Han S, Norton DP, Pearton SJ. Simulation of vertical and lateral ZnO light-emitting diodes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 690. DOI: 10.1116/1.2180255  0.626
2006 Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 284. DOI: 10.1116/1.2163888  0.335
2006 Stafford L, Voss LF, Pearton SJ, Chen JJ, Ren F. Schottky barrier height of boride-based rectifying contacts to p-GaN Applied Physics Letters. 89. DOI: 10.1063/1.2357855  0.396
2006 Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698  0.815
2006 Herrero AM, Gila BP, Abernathy CR, Pearton SJ, Craciun V, Siebein K, Ren F. Epitaxial growth of Sc2O3 films on GaN Applied Physics Letters. 89: 092117. DOI: 10.1063/1.2270058  0.566
2006 Lopatiuk-Tirpak O, Schoenfeld WV, Chernyak L, Xiu FX, Liu JL, Jang S, Ren F, Pearton SJ, Osinsky A, Chow P. Carrier concentration dependence of acceptor activation energy in p-type ZnO Applied Physics Letters. 88. DOI: 10.1063/1.2206700  0.611
2006 Irokawa Y, Ishiguro O, Kachi T, Pearton SJ, Ren F. Implantation temperature dependence of Si activation in AlGaN Applied Physics Letters. 88: 182106. DOI: 10.1063/1.2200283  0.371
2006 Kang BS, Chen JJ, Ren F, Li Y, Kim H, Norton DP, Pearton SJ. ITO∕Ti∕Au Ohmic contacts on n-type ZnO Applied Physics Letters. 88: 182101. DOI: 10.1063/1.2198513  0.392
2006 Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC. Electroluminescence from ZnO nanowire/polymer composite p-n junction Applied Physics Letters. 88. DOI: 10.1063/1.2198480  0.686
2006 Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Band offsets in the Sc2O3∕GaN heterojunction system Applied Physics Letters. 88: 142115. DOI: 10.1063/1.2194314  0.567
2006 Chen J, Jang S, Anderson TJ, Ren F, Li Y, Kim H, Gila BP, Norton DP, Pearton SJ. Low specific contact resistance Ti∕Au contacts on ZnO Applied Physics Letters. 88: 122107. DOI: 10.1063/1.2187576  0.74
2006 Wang H, Kang BS, Chen J, Anderson T, Jang S, Ren F, Kim HS, Li YJ, Norton DP, Pearton SJ. Band-edge electroluminescence from N+-implanted bulk ZnO Applied Physics Letters. 88: 102107. DOI: 10.1063/1.2186508  0.768
2006 Chen J, Gila BP, Hlad M, Gerger A, Ren F, Abernathy CR, Pearton SJ. Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 88: 042113. DOI: 10.1063/1.2170140  0.572
2006 Chen J, Jang S, Ren F, Rawal S, Li Y, Kim H, Norton DP, Pearton SJ, Osinsky A. Comparison of Ti∕Al∕Pt∕Au and Ti∕Au Ohmic contacts on n-type ZnCdO Applied Physics Letters. 88: 012109. DOI: 10.1063/1.2161927  0.652
2006 Voss L, Khanna R, Pearton SJ, Ren F, Kravchenko I. Improved thermally stable ohmic contacts on p-GaN based on W2B Applied Physics Letters. 88: 12104. DOI: 10.1063/1.2161806  0.422
2006 Norton DP, Ivill M, Li Y, Kwon YW, Erie JM, Kim HS, Ip K, Pearton SJ, Heo YW, Kim S, Kang BS, Ren F, Hebard AF, Kelly J. Charge carrier and spin doping in ZnO thin films Thin Solid Films. 496: 160-168. DOI: 10.1016/J.Tsf.2005.08.246  0.324
2006 Kim J, Freitas JA, Mittereder J, Fitch R, Kang BS, Pearton SJ, Ren F. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-raman technique Solid-State Electronics. 50: 408-411. DOI: 10.1016/J.Sse.2005.11.009  0.467
2006 Ip K, Thaler G, Yang H, Youn Han S, Li Y, Norton D, Pearton S, Jang S, Ren F. Contacts to ZnO Journal of Crystal Growth. 287: 149-156. DOI: 10.1016/J.Jcrysgro.2005.10.059  0.411
2006 Wright JS, Khanna R, Ramani K, Cranciun V, Singh R, Norton DP, Pearton SJ, Ren F, Kravchenko II. ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO Applied Surface Science. 253: 2465-2469. DOI: 10.1016/J.Apsusc.2006.04.058  0.404
2006 Khanna R, Pearton SJ, Ren F, Kravchenko II. Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN Applied Surface Science. 253: 2340-2344. DOI: 10.1016/J.Apsusc.2006.04.042  0.416
2006 Khanna R, Ramani K, Cracium V, Singh R, Pearton SJ, Ren F, Kravchenko II. ZrB 2 Schottky diode contacts on n-GaN Applied Surface Science. 253: 2315-2319. DOI: 10.1016/J.Apsusc.2006.04.041  0.448
2006 Voss L, Pearton SJ, Ren F, Kravchenko II. ZrB2-based Ohmic contacts to p-GaN Applied Surface Science. 253: 1934-1938. DOI: 10.1016/J.Apsusc.2006.03.041  0.396
2006 Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO Applied Surface Science. 253: 1269-1273. DOI: 10.1016/J.Apsusc.2006.01.081  0.529
2006 Voss L, Khanna R, Pearton SJ, Ren F, Kravchenko II. Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN Applied Surface Science. 253: 1255-1259. DOI: 10.1016/J.Apsusc.2006.01.080  0.409
2006 Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries Applied Surface Science. 253: 889-894. DOI: 10.1016/J.Apsusc.2006.01.037  0.564
2006 Chen J, Jang S, Ren F, Rawal S, Li Y, Kim H, Norton D, Pearton S, Osinsky A. Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO Applied Surface Science. 253: 746-752. DOI: 10.1016/J.Apsusc.2006.01.012  0.642
2006 Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018  0.599
2006 Khanna R, Pearton SJ, Ren F, Kravchenko I. Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN Applied Surface Science. 252: 5814-5819. DOI: 10.1016/J.Apsusc.2005.07.036  0.44
2006 Chang C, Chi G, Wang W, Chen L, Chen K, Ren F, Pearton SJ. Electrical transport properties of single GaN and InN nanowires Journal of Electronic Materials. 35: 738-743. DOI: 10.1007/S11664-006-0131-Z  0.436
2006 Jang S, Ren F, Pearton SJ, Gila BP, Hlad M, Abernathy CR, Yang H, Pan CJ, Chyi J, Bove P, Lahreche H, Thuret J. Si-diffused GaN for enhancement-mode GaN mosfet on si applications Journal of Electronic Materials. 35: 685-690. DOI: 10.1007/S11664-006-0121-1  0.709
2006 Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2  0.608
2006 Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ, Dalrymple TW, Bozada C, Fitch RC, Moser N, Bedford RG, Schimpf M. Comparison of laser-wavelength operation for drilling of via holes in AIGaN/GaN HEMTs on SiC substrates Journal of Electronic Materials. 35: 675-679. DOI: 10.1007/S11664-006-0119-8  0.325
2006 Khanna R, Pearton SJ, Ren F, Kravchenko I. Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN Journal of Electronic Materials. 35: 658-662. DOI: 10.1007/S11664-006-0116-Y  0.418
2006 Chen J, Jang S, Ren F, Li Y, Kim H, Norton DP, Pearton SJ, Osinsky A, Chu SNG, Weaver JF. Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO Journal of Electronic Materials. 35: 516-519. DOI: 10.1007/S11664-006-0092-2  0.6
2006 Chen J, Hlad M, Gerger A, Gila B, Ren F, Abernathy C, Pearton S. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Journal of Electronic Materials. 36: 368-372. DOI: 10.1007/S11664-006-0037-9  0.579
2006 Choi H, Lee CW, Lee GS, Oh MK, Ahn DJ, Kim J, Kim J, Ren F, Pearton SJ. Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors Physica Status Solidi (a). 203: R79-R81. DOI: 10.1002/Pssa.200622290  0.45
2006 Ko S, Wu W, Lin J, Jang S, Ren F, Pearton S, Fitch R, Gillespie J. A high efficiency class-F power amplifier using AIGaN/GaN HEMT Microwave and Optical Technology Letters. 48: 1955-1957. DOI: 10.1002/Mop.21832  0.58
2005 Sippel-Oakley J, Wang HT, Kang BS, Wu Z, Ren F, Rinzler AG, Pearton SJ. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology. 16: 2218-21. PMID 20817998 DOI: 10.1088/0957-4484/16/10/040  0.669
2005 Khanna R, Pearton SJ, Kao CJ, Kravchenko II, Ren F, Chi GC, Dabiran A, Osinsky A. W2B based High Thermal Stability Ohmic Contacts to n-GaN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff14-04  0.427
2005 Kim J, Freitas JA, Klein PB, Jang S, Ren F, Pearton SJ. The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.2103527  0.647
2005 Tien LC, Wang HT, Kang BS, Ren F, Sadik PW, Norton DP, Pearton SJ, Lin J. Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels Electrochemical and Solid-State Letters. 8: G230. DOI: 10.1149/1.1979450  0.314
2005 Irokawa Y, Fujishima O, Kachi T, Pearton SJ, Ren F. Si + Ion Implantation into GaN at Cryogenic Temperatures Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.1869093  0.31
2005 Yang HS, Han SY, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Dabiran AM, Chow PP, Chernyak L, Steiner T, Kao CJ, et al. Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7296-7300. DOI: 10.1143/Jjap.44.7296  0.378
2005 Ip K, Khanna R, Norton DP, Pearton SJ, Ren F, Kravchenko I, Kao CJ, Chi GC. Improved thermal stability CrB2 contacts on ZnO Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7291-7295. DOI: 10.1143/Jjap.44.7291  0.406
2005 Han SY, Yang HS, Baik KH, Pearton SJ, Ren F. Role of Ion Energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes Japanese Journal of Applied Physics. 44: 7234-7237. DOI: 10.1143/Jjap.44.7234  0.343
2005 Yang HS, Li Y, Norton DP, Pearton SJ, Jang S, Ren F, Boatner LA. Fabrication of p-n junctions in as-grown ZnMgO/ZnO films Proceedings of Spie. 5941. DOI: 10.1117/12.616668  0.649
2005 Han SY, Yang H, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Chow PP. Design and simulation of ZnO-based light-emitting diode structures Journal of Vacuum Science & Technology B. 23: 2504-2509. DOI: 10.1116/1.2131869  0.345
2005 Voss L, Gila BP, Pearton SJ, Wang H, Ren F. Characterization of bulk GaN rectifiers for hydrogen gas sensing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2373. DOI: 10.1116/1.2110343  0.76
2005 Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ. Pt-coated InN nanorods for selective detection of hydrogen at room temperature Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1891. DOI: 10.1116/1.2008268  0.695
2005 Kao CJ, Kwon YW, Heo YW, Norton DP, Pearton SJ, Ren F, Chi GC. Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1024-1028. DOI: 10.1116/1.1924613  0.421
2005 Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing Ieee Sensors Journal. 5: 677-680. DOI: 10.1109/Jsen.2005.848136  0.614
2005 Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136070  0.696
2005 Yang HS, Norton DP, Pearton SJ, Ren F. Ti∕Au n-type Ohmic contacts to bulk ZnO substrates Applied Physics Letters. 87: 212106. DOI: 10.1063/1.2135381  0.426
2005 Khanna R, Han SY, Pearton SJ, Schoenfeld D, Schoenfeld WV, Ren F. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132085  0.33
2005 Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617  0.765
2005 Gila BP, Hlad M, Onstine AH, Frazier R, Thaler GT, Herrero A, Lambers E, Abernathy CR, Pearton SJ, Anderson T, Jang S, Ren F, Moser N, Fitch RC, Freund M. Improved oxide passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2105987  0.683
2005 Kao CJ, Chen MC, Tun CJ, Chi GC, Sheu JK, Lai WC, Lee ML, Ren F, Pearton SJ. Comparison of low-temperature GaN, SiO 2, and SiN x as gate insulators on AlGaNGaN heterostructure field-effect transistors Journal of Applied Physics. 98. DOI: 10.1063/1.2058173  0.414
2005 Chang C, Chi G, Wang W, Chen L, Chen K, Ren F, Pearton SJ. Transport properties of InN nanowires Applied Physics Letters. 87: 93112. DOI: 10.1063/1.2037850  0.366
2005 Ip K, Li Y, Norton DP, Pearton SJ, Ren F. Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO Applied Physics Letters. 87: 071906. DOI: 10.1063/1.2012518  0.382
2005 Kang BS, Ren F, Wang L, Lofton C, Tan WW, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors Applied Physics Letters. 87: 023508. DOI: 10.1063/1.1994951  0.327
2005 Kang BS, Kim J, Jang S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952568  0.704
2005 Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, Pearton SJ, Lin J. Hydrogen-selective sensing at room temperature with ZnO nanorods Applied Physics Letters. 86: 243503. DOI: 10.1063/1.1949707  0.683
2005 Irokawa Y, Fujishima O, Kachi T, Pearton SJ, Ren F. Activation characteristics of ion-implanted Si+ in AlGaN Applied Physics Letters. 86: 192102. DOI: 10.1063/1.1926422  0.364
2005 Yang HS, Li Y, Norton DP, Ip K, Pearton SJ, Jang S, Ren F. Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition Applied Physics Letters. 86: 192103. DOI: 10.1063/1.1925309  0.657
2005 Kang BS, Ren F, Kang MC, Lofton C, Tan W, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Detection of halide ions with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 86: 173502. DOI: 10.1063/1.1920433  0.344
2005 Yang HS, Han SY, Baik KH, Pearton SJ, Ren F. Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes Applied Physics Letters. 86: 102104. DOI: 10.1063/1.1882749  0.311
2005 Kouche A, Lin J, Law M, Kim S, Kim B, Ren F, Pearton S. Remote sensing system for hydrogen using GaN Schottky diodes Sensors and Actuators B: Chemical. 105: 329-333. DOI: 10.1016/J.Snb.2004.06.021  0.349
2005 Kang B, Kim S, Ren F, Gila B, Abernathy C, Pearton S. Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection Sensors and Actuators B: Chemical. 104: 232-236. DOI: 10.1016/J.Snb.2004.05.018  0.624
2005 Chu S, Ren F, Pearton S, Kang B, Kim S, Gila B, Abernathy C, Chyi J, Johnson W, Lin J. Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors Materials Science and Engineering: A. 409: 340-347. DOI: 10.1016/J.Msea.2005.05.119  0.571
2005 Khanna R, Pearton SJ, Ren F, Kravchenko I, Kao CJ, Chi GC. W2B-based ohmic contacts to n-GaN Applied Surface Science. 252: 1826-1832. DOI: 10.1016/J.Apsusc.2005.03.143  0.434
2005 Ip K, Khanna R, Norton DP, Pearton SJ, Ren F, Kravchenko I, Kao CJ, Chi GC. Thermal stability of W2B and W2B5 contacts on ZnO Applied Surface Science. 252: 1846-1853. DOI: 10.1016/J.Apsusc.2005.03.133  0.4
2005 LaRoche JR, Heo YW, Kang BS, Tien LC, Kwon Y, Norton DP, Gila BP, Ren F, Pearton SJ. Fabrication approaches to ZnO nanowire devices Journal of Electronic Materials. 34: 404-408. DOI: 10.1007/S11664-005-0119-0  0.614
2005 Khanna R, Ip K, Allums KK, Baik K, Abernathy CR, Pearton SJ, Heo YW, Norton DP, Ren F, Shojah-Ardalan S, Wilkins R. Proton irradiation of ZnO schottky diodes Journal of Electronic Materials. 34: 395-398. DOI: 10.1007/S11664-005-0117-2  0.357
2005 Laroche JR, Ren F, Baik KW, Pearton SJ, Shelton BS, Peres B. Design of edge termination for GaN power Schottky diodes Journal of Electronic Materials. 34: 370-374. DOI: 10.1007/S11664-005-0113-6  0.378
2005 Frazier RM, Thaler GT, Gila BP, Stapleton J, Overberg ME, Abernathy CR, Pearton SJ, Ren F, Zavada JM. AIN-based dilute magnetic semiconductors Journal of Electronic Materials. 34: 365-369. DOI: 10.1007/S11664-005-0112-7  0.529
2005 Wang H, Kang B, Ren F, Tien L, Sadik P, Norton D, Pearton S, Lin J. Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods Applied Physics A. 81: 1117-1119. DOI: 10.1007/S00339-005-3310-5  0.703
2005 Kang B, Heo Y, Tien L, Norton D, Ren F, Gila B, Pearton S. Hydrogen and ozone gas sensing using multiple ZnO nanorods Applied Physics A. 80: 1029-1032. DOI: 10.1007/S00339-004-3098-8  0.592
2005 Heo YW, Kang BS, Tien LC, Norton DP, Ren F, Pearton SJ. UV photoresponse of single ZnO nanowires Applied Physics A. 80: 497-499. DOI: 10.1007/S00339-004-3045-8  0.367
2005 Heo YW, Kaufman M, Pruessner K, Siebein KN, Norton DP, Ren F. ZnO/cubic (Mg,Zn)O radial nanowire heterostructures Applied Physics A. 80: 263-266. DOI: 10.1007/S00339-004-2667-1  0.312
2005 Kang B, Kim S, Ren F, Ip K, Heo Y, Gila B, Abernathy C, Norton D, Pearton S. Detection of CO using bulk ZnO Schottky rectifiers Applied Physics A. 80: 259-261. DOI: 10.1007/S00339-004-2666-2  0.593
2005 Irokawa Y, Nakano Y, Ishiko M, Kachi T, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J. GaN enhancement mode metal-oxide semiconductor field effect transistors Physica Status Solidi (C). 2: 2668-2671. DOI: 10.1002/Pssc.200461280  0.595
2005 Kang BS, Kim S, Kim J, Mehandru R, Ren F, Baik K, Pearton SJ, Gila BP, Abernathy CR, Pan CC, Chen GT, Chyi JI, Chandrasekaran V, Sheplak M, Nishida T, et al. AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing Physica Status Solidi C: Conferences. 2: 2684-2687. DOI: 10.1002/Pssc.200461269  0.586
2005 Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Baik KH, Gila BP, Abernathy CR, et al. Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors Physica Status Solidi C: Conferences. 2: 2672-2675. DOI: 10.1002/Pssc.200461268  0.64
2004 Stodilka DO, Gila BP, Abernathy CR, Lambers E, Ren F, Pearton SJ. Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination Materials Science Forum. 1377-1380. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1377  0.525
2004 Heo Y, Kang BS, Tien LC, Kwon Y, La Roche JR, Gila BP, Ren F, Pearton SJ, Norton DP. Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire Mrs Proceedings. 829. DOI: 10.1557/Proc-829-B8.1  0.603
2004 Ip K, Gila B, Onstine A, Lambers E, Heo Y, Norton D, Pearton S, LaRoche J, Ren F. Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO. Mrs Proceedings. 829. DOI: 10.1557/Proc-829-B10.1  0.605
2004 Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ. Dramatic Improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Journal of the Electrochemical Society. 151: G915-G918. DOI: 10.1149/1.1803561  0.626
2004 Irokawa Y, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ, Pan C, Chen G, Chyi J, Park SS, Park YJ. Reduction of Surface-Induced Current Collapse in AlGaN/GaN HFETs on Freestanding GaN Substrates Electrochemical and Solid-State Letters. 7: G188. DOI: 10.1149/1.1778933  0.63
2004 Kang BS, Kim S, Ren F, Ip K, Heo YW, Gila B, Abernathy CR, Norton DP, Pearton SJ. Detection of C[sub 2]H[sub 4] Using Wide-Bandgap Semiconductor Sensors Journal of the Electrochemical Society. 151: G468. DOI: 10.1149/1.1758817  0.624
2004 Kim S, Kang BS, Ren F, Heo YW, Ip K, Norton DP, Pearton SJ. Characteristics of Thin-Film p-ZnMgO/n-ITO Heterojunctions on Glass Substrates Electrochemical and Solid-State Letters. 7: G145. DOI: 10.1149/1.1738554  0.401
2004 Kim J, Baik KH, Kang BS, Kim S, Irokawa Y, Ren F, Pearton SJ, Chung GY. 4H-SiC Schottky Diode Array with 430 A Forward Current Electrochemical and Solid-State Letters. 7: G125. DOI: 10.1149/1.1697908  0.497
2004 LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F. Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes Electrochemical and Solid-State Letters. 7: G21. DOI: 10.1149/1.1632872  0.456
2004 Irokawa Y, Luo B, Ren F, Pan C-, Chen G-, Chyi JI, Park SS, Park YJ, Pearton SJ. DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates Electrochemical and Solid State Letters. 7. DOI: 10.1149/1.1626992  0.446
2004 Buyanova IA, Bergman JP, Chen WM, Thaler G, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F, Kyrychenko FV, Stanton CJ, Pan C, Chen G, Chyi J, Zavada JM. Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2668. DOI: 10.1116/1.1819897  0.396
2004 Kang BS, Kim S, La Roche JR, Ren F, Fitch RC, Gillespie JK, Moser N, Jenkins I, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Pearton SJ. Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2635-2639. DOI: 10.1116/1.1814111  0.439
2004 Kang BS, Ren F, Irokawa Y, Baik KW, Pearton SJ, Pan C-, Chen G-, Chyi J-, Ko H-, Lee H-. Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates Journal of Vacuum Science & Technology B. 22: 710-714. DOI: 10.1116/1.1689303  0.432
2004 Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ. Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 619. DOI: 10.1116/1.1667508  0.435
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F. Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 171. DOI: 10.1116/1.1641060  0.415
2004 Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NV, Shlensky AA, Baik KH, Pearton SJ, Luo B, Ren F, Zavada JM. Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 77. DOI: 10.1116/1.1640395  0.353
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