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Cheuk C. Lo, Ph.D. - Publications

Affiliations: 
Electrical Engineering & Computer Sciences University of California, Berkeley, Berkeley, CA, United States 
Area:
nanoscale science
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27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Ross P, Rose BC, Lo CC, Thewalt ML, Tyryshkin AM, Lyon SA, Morton JJ. Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.054014  0.449
2016 Bienfait A, Pla JJ, Kubo Y, Zhou X, Stern M, Lo CC, Weis CD, Schenkel T, Vion D, Esteve D, Morton JJ, Bertet P. Controlling spin relaxation with a cavity. Nature. PMID 26878235 DOI: 10.1038/Nature16944  0.437
2015 Bienfait A, Pla JJ, Kubo Y, Stern M, Zhou X, Lo CC, Weis CD, Schenkel T, Thewalt ML, Vion D, Esteve D, Julsgaard B, Mølmer K, Morton JJ, Bertet P. Reaching the quantum limit of sensitivity in electron spin resonance. Nature Nanotechnology. PMID 26657787 DOI: 10.1038/Nnano.2015.282  0.451
2015 Lo CC, Urdampilleta M, Ross P, Gonzalez-Zalba MF, Mansir J, Lyon SA, Thewalt ML, Morton JJ. Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon. Nature Materials. 14: 490-4. PMID 25799326 DOI: 10.1038/Nmat4250  0.485
2015 Urdampilleta M, Chatterjee A, Lo CC, Kobayashi T, Mansir J, Barraud S, Betz AC, Rogge S, Gonzalez-Zalba MF, Morton JJL. Charge dynamics and spin blockade in a hybrid double quantum dot in silicon Physical Review X. 5. DOI: 10.1103/Physrevx.5.031024  0.417
2014 Lo CC, Li J, Appelbaum I, Morton JJL. Microwave manipulation of electrically injected spin-polarized electrons in silicon Physical Review Applied. 1. DOI: 10.1103/Physrevapplied.1.014006  0.475
2014 Schmidt AR, Henry E, Lo CC, Wang YT, Li H, Greenman L, Namaan O, Schenkel T, Whaley KB, Bokor J, Yablonovitch E, Siddiqi I. A prototype silicon double quantum dot with dispersive microwave readout Journal of Applied Physics. 116. DOI: 10.1063/1.4890835  0.518
2014 Lo CC, Simmons S, Lo Nardo R, Weis CD, Tyryshkin AM, Meijer J, Rogalla D, Lyon SA, Bokor J, Schenkel T, Morton JJL. Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures Applied Physics Letters. 104. DOI: 10.1063/1.4876175  0.541
2013 Lo CC, Weis CD, van Tol J, Bokor J, Schenkel T. All-electrical nuclear spin polarization of donors in silicon. Physical Review Letters. 110: 057601. PMID 23414045 DOI: 10.1103/Physrevlett.110.057601  0.584
2013 Choi SJ, Bennett P, Takei K, Wang C, Lo CC, Javey A, Bokor J. Short-channel transistors constructed with solution-processed carbon nanotubes. Acs Nano. 7: 798-803. PMID 23259742 DOI: 10.1021/Nn305277D  0.549
2013 Schenkel T, Lo CC, Weis CD, Bokor J, Tyryshkin AM, Lyonc SA. A spin quantum bit architecture with coupled donors and quantum dots in silicon Single-Atom Nanoelectronics. 255-279. DOI: 10.4032/9789814316699  0.467
2013 Lo CC, Weis CD, Van Tol J, Bokor J, Schenkel T, Morton JJL. Spins in silicon MOSFETs: Electron spin relaxation and hyperpolarization of nuclear spins Proceedings of Spie - the International Society For Optical Engineering. 8813. DOI: 10.1117/12.2023595  0.596
2013 Lo CC, Weis CD, Van Tol J, Bokor J, Schenkel T. All-electrical nuclear spin polarization of donors in silicon Physical Review Letters. 110. DOI: 10.1103/PhysRevLett.110.057601  0.507
2012 Weis CD, Lo CC, Lang V, Tyryshkin AM, George RE, Yu KM, Bokor J, Lyon SA, Morton JJL, Schenkel T. Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28 Applied Physics Letters. 100. DOI: 10.1063/1.4704561  0.581
2012 Lo CC, Bradbury FR, Tyryshkin AM, Weis CD, Bokor J, Schenkel T, Lyon SA. Suppression of microwave rectification effects in electrically detected magnetic resonance measurements Applied Physics Letters. 100. DOI: 10.1063/1.3684247  0.544
2011 Lo CC, Lang V, George RE, Morton JJ, Tyryshkin AM, Lyon SA, Bokor J, Schenkel T. Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas. Physical Review Letters. 106: 207601. PMID 21668263 DOI: 10.1103/Physrevlett.106.207601  0.544
2011 Lang V, Lo CC, George RE, Lyon SA, Bokor J, Schenkel T, Ardavan A, Morton JJ. Electrically detected magnetic resonance in a W-band microwave cavity. The Review of Scientific Instruments. 82: 034704. PMID 21456773 DOI: 10.1063/1.3557395  0.514
2009 De Sousa R, Lo CC, Bokor J. Spin-dependent scattering in a silicon transistor Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.045320  0.588
2009 Lo CC, Persaud A, Dhuey S, Olynick D, Borondics F, Martin MC, Bechtel HA, Bokor J, Schenkel T. Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers toward donor qubits in silicon Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/10/105022  0.604
2009 Schenkel T, Lo CC, Weis CD, Schuh A, Persaud A, Bokor J. Critical issues in the formation of quantum computer test structures by ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 2563-2566. DOI: 10.1016/J.Nimb.2009.05.061  0.524
2009 Weis CD, Schuh A, Batra A, Persaud A, Rangelow IW, Bokor J, Lo CC, Cabrini S, Olynick D, Duhey S, Schenkel T. Mapping of ion beam induced current changes in FinFETs Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 1222-1225. DOI: 10.1016/J.Nimb.2009.01.019  0.472
2008 Weis CD, Schuh A, Batra A, Persaud A, Rangelow IW, Bokor J, Lo CC, Cabrini S, Sideras-Haddad E, Fuchs GD, Hanson R, Awschalom DD, Schenkel T. Single atom doping for quantum device development in diamond and silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 2596-2600. DOI: 10.1116/1.2968614  0.508
2008 Lo CC, Bokor J, Schenkel T, He J, Tyryshkin AM, Lyon SA. Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors (Applied Physics Letters (2007) 91 (242106)) Applied Physics Letters. 92. DOI: 10.1063/1.2890086  0.544
2007 Lo CC, Bokor J, Schenkel T, Tyryshkin AM, Lyon SA. Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors Applied Physics Letters. 91: 242106. DOI: 10.1063/1.2817966  0.595
2007 Batra A, Weis CD, Reijonen J, Persaud A, Schenkel T, Cabrini S, Lo CC, Bokor J. Detection of low energy single ion impacts in micron scale transistors at room temperature Applied Physics Letters. 91. DOI: 10.1063/1.2805634  0.521
2006 Schenkel T, Liddle JA, Bokor J, Persaud A, Park SJ, Shangkuan J, Lo CC, Kwon S, Lyon SA, Tyryshkin AM, Rangelow IW, Sarov Y, Schneider DH, Ager J, de Sousa R. Strategies for integration of donor electron spin qubits in silicon Microelectronic Engineering. 83: 1814-1817. DOI: 10.1016/J.Mee.2006.01.234  0.594
1981 Lo CC, Leskovar B. Performance Studies of High Gain Photomultiplier Having Z-Configuration of Microchannel Plates Ieee Transactions On Nuclear Science. 28: 698-704. DOI: 10.1109/Tns.1981.4331265  0.325
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