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Boaz Kochman, Ph.D. - Publications

Affiliations: 
2002 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
semiconductors
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Kochman B, Stiff-Roberts A, Chakrabarti S, Phillips J, Krishna S, Singh J, Bhattacharya P. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors Ieee Journal of Quantum Electronics. 39: 459-467. DOI: 10.1109/Jqe.2002.808169  0.684
2002 Kochman B, Ghosh S, Singh J, Bhattacharya P. Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots Journal of Physics D: Applied Physics. 35: L65-L68. DOI: 10.1088/0022-3727/35/15/101  0.547
2002 Stiff-Roberts AD, Chakrabarti S, Pradhan S, Kochman B, Bhattacharya P. Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors Applied Physics Letters. 80: 3265-3267. DOI: 10.1063/1.1476387  0.669
2002 Kochman B, Ghosh S, Singh J, Bhattacharya P. In-plane velocity-field characteristics of InAs self-assembled quantum dot layers Electronics Letters. 38: 752-753. DOI: 10.1049/El:20020504  0.587
2001 Zhou WD, Sabarinathan J, Bhattarcharya P, Kochman B, Berg EW, Yu PC, Pang SW. Characteristics of a photonic bandgap single defect microcavity electroluminescent device Ieee Journal of Quantum Electronics. 37: 1153-1160. DOI: 10.1109/3.945320  0.705
2001 Sabarinathan J, Bhattacharya P, Zhu D, Kochman B, Zhou W, Yu P. Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth Applied Physics Letters. 78: 3024-3026. DOI: 10.1063/1.1372198  0.632
2000 Ghosh S, Kochman B, Singh J, Bhattacharya P. Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy Applied Physics Letters. 76: 2571-2573. DOI: 10.1063/1.126411  0.407
2000 Urayama J, Norris TB, Kochman B, Singh J, Bhattacharya P. Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots Applied Physics Letters. 76: 2394-2396. DOI: 10.1063/1.126356  0.386
2000 Zhou WD, Sabarinathan J, Kochman B, Berg E, Qasaimeh O, Pang S, Bhattacharya P. Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature Electronics Letters. 36: 1541-1542. DOI: 10.1049/El:20001131  0.666
1996 Kochman B, Yeom K, Singh J. Laser induced impact ionization in semiconductors: A Monte Carlo study for silicon Applied Physics Letters. 68: 1936-1938. DOI: 10.1063/1.115631  0.301
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