| Year |
Citation |
Score |
| 2022 |
Udai A, Ganguly S, Bhattacharya P, Saha D. Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy. Nanotechnology. PMID 35977452 DOI: 10.1088/1361-6528/ac8a50 |
0.578 |
|
| 2022 |
Aggarwal T, Udai A, Saha PK, Ganguly S, Bhattacharya P, Saha D. Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs. Acs Applied Materials & Interfaces. 14: 13812-13819. PMID 35262330 DOI: 10.1021/acsami.1c20003 |
0.628 |
|
| 2021 |
Udai A, Aiello A, Aggarwal T, Saha D, Bhattacharya P. Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption. Acs Applied Materials & Interfaces. PMID 34495630 DOI: 10.1021/acsami.1c11096 |
0.659 |
|
| 2020 |
Das D, Aiello A, Guo W, Bhattacharya P. InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics Ieee Transactions On Nanotechnology. 19: 571-574. DOI: 10.1109/Tnano.2020.3007732 |
0.49 |
|
| 2020 |
Chung K, Pandey A, Sarwar T, Aiello A, Mi Z, Bhattacharya P, Ku P. Wavelength tuning in the purple wavelengths using strain-controlled AlxGa1–xN/GaN disk-in-wire structures Applied Physics Letters. 116: 041102. DOI: 10.1063/1.5140996 |
0.576 |
|
| 2020 |
Wu Y, Laleyan DA, Deng Z, Ahn C, Aiello AF, Pandey A, Liu X, Wang P, Sun K, Ahmadi E, Sun Y, Kira M, Bhattacharya PK, Kioupakis E, Mi Z. Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors Advanced Electronic Materials. 2000337. DOI: 10.1002/Aelm.202000337 |
0.506 |
|
| 2019 |
Aiello A, Wu Y, Pandey A, Wang P, Lee W, Bayerl D, Sanders N, Deng Z, Gim J, Sun K, Hovden R, Kioupakis E, Mi Z, Bhattacharya P. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures. Nano Letters. PMID 31573819 DOI: 10.1021/Acs.Nanolett.9B02847 |
0.559 |
|
| 2019 |
Schwartz J, Jiang Y, Wang Y, Aiello A, Bhattacharya P, Yuan H, Mi Z, Bassim N, Hovden R. Removing Stripes, Scratches, and Curtaining with Nonrecoverable Compressed Sensing. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 1-6. PMID 30867078 DOI: 10.1017/S1431927619000254 |
0.461 |
|
| 2019 |
Aiello A, Pandey A, Bhattacharya A, Gim J, Liu X, Laleyan DA, Hovden R, Mi Z, Bhattacharya P. Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 508: 66-71. DOI: 10.1016/J.Jcrysgro.2018.12.025 |
0.619 |
|
| 2018 |
Wu Y, Wang Y, Sun K, Aiello A, Bhattacharya P, Mi Z. Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence Journal of Crystal Growth. 498: 109-114. DOI: 10.1016/J.Jcrysgro.2018.06.008 |
0.588 |
|
| 2017 |
Bhattacharya A, Baten MZ, Iorsh I, Frost T, Kavokin A, Bhattacharya P. Room-Temperature Spin Polariton Diode Laser. Physical Review Letters. 119: 067701. PMID 28949600 DOI: 10.1103/Physrevlett.119.067701 |
0.802 |
|
| 2017 |
Nelson C, Deshpande S, Liu A, Jahangir S, Bhattacharya P, Steel DG. High-resolution nonlinear optical spectroscopy of InGaN quantum dots in GaN nanowires Journal of the Optical Society of America B-Optical Physics. 34: 1206-1213. DOI: 10.1364/Josab.34.001206 |
0.379 |
|
| 2017 |
Bhattacharya A, Baten Z, Frost T, Bhattacharya P. Room temperature GaN-based edge-emitting spin-polarized light emitting diode Ieee Photonics Technology Letters. 29: 338-341. DOI: 10.1109/Lpt.2017.2650866 |
0.399 |
|
| 2017 |
Hazari A, Hsiao FC, Yan L, Heo J, Millunchick JM, Dallesasse JM, Bhattacharya P. $1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit Ieee Journal of Quantum Electronics. 53: 1-9. DOI: 10.1109/Jqe.2017.2708526 |
0.729 |
|
| 2016 |
Bhattacharya P, Hazari A. InGaN/GaN dot-in-nanowire lasers on silicon Frontiers in Optics. DOI: 10.1364/Ls.2016.Ltu1H.2 |
0.431 |
|
| 2016 |
Bhattacharya A, Baten MZ, Bhattacharya P. Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves Applied Physics Letters. 108. DOI: 10.1063/1.4940888 |
0.34 |
|
| 2015 |
Zhao C, Ng TK, Prabaswara A, Conroy M, Jahangir S, Frost T, O'Connell J, Holmes JD, Parbrook PJ, Bhattacharya P, Ooi BS. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. Nanoscale. 7: 16658-65. PMID 26242178 DOI: 10.1039/C5Nr03448E |
0.354 |
|
| 2015 |
Hazari A, Bhattacharya A, Frost T, Zhao S, Baten MZ, Mi Z, Bhattacharya P. Optical constants of In(x)Ga(1-x)N (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes. Optics Letters. 40: 3304-7. PMID 26176455 DOI: 10.1364/Ol.40.003304 |
0.784 |
|
| 2015 |
Baten MZ, Frost T, Iorsh I, Deshpande S, Kavokin A, Bhattacharya P. Small-signal modulation characteristics of a polariton laser. Scientific Reports. 5: 11915. PMID 26154681 DOI: 10.1038/Srep11915 |
0.346 |
|
| 2015 |
Su GL, Frost T, Bhattacharya P, Dallesasse JM. Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ~ 630 nm). Optics Express. 23: 12850-65. PMID 26074539 DOI: 10.1364/Oe.23.012850 |
0.386 |
|
| 2015 |
Park Y, Jahangir S, Park Y, Bhattacharya P, Heo J. InGaN/GaN nanowires grown on SiO2 and light emitting diodes with low turn on voltages. Optics Express. 23: A650-6. PMID 26072889 DOI: 10.1364/Oe.23.00A650 |
0.713 |
|
| 2015 |
Yan L, Jahangir S, Wight SA, Nikoobakht B, Bhattacharya P, Millunchick JM. Structural and optical properties of disc-in-wire InGaN/GaN LEDs. Nano Letters. 15: 1535-9. PMID 25658444 DOI: 10.1021/Nl503826K |
0.411 |
|
| 2015 |
Deshpande S, Frost T, Yan L, Jahangir S, Hazari A, Liu X, Mirecki-Millunchick J, Mi Z, Bhattacharya P. Formation and nature of InGaN quantum dots in GaN nanowires. Nano Letters. 15: 1647-53. PMID 25654749 DOI: 10.1021/Nl5041989 |
0.616 |
|
| 2014 |
Su GL, Frost T, Bhattacharya P, Dallesasse JM, Chuang SL. Detailed model for the In0.18Ga0.82N/GaN self-assembled quantum dot active material for λ = 420 nm emission. Optics Express. 22: 22716-29. PMID 25321741 DOI: 10.1364/Oe.22.022716 |
0.434 |
|
| 2014 |
Bhattacharya P, Frost T, Deshpande S, Baten MZ, Hazari A, Das A. Room temperature electrically injected polariton laser. Physical Review Letters. 112: 236802. PMID 24972222 DOI: 10.1103/PhysRevLett.112.236802 |
0.327 |
|
| 2014 |
Frost T, Jahangir S, Stark E, Deshpande S, Hazari A, Zhao C, Ooi BS, Bhattacharya P. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. Nano Letters. 14: 4535-41. PMID 24971807 DOI: 10.1021/Nl5015603 |
0.333 |
|
| 2014 |
Bhattacharya P, Frost T, Banerjee A, Jahangir S. InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers Advances in Science and Technology. 93: 270-275. DOI: 10.4028/Www.Scientific.Net/Ast.93.270 |
0.794 |
|
| 2014 |
Bhattacharya P, Jahangir S, Stark E, Mandl M, Schimpke T, Strassburg M. Long wavelength nanowire light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 9003. DOI: 10.1117/12.2042813 |
0.487 |
|
| 2014 |
Ng TK, Gasim A, Cha D, Janjua B, Yang Y, Jahangir S, Zhao C, Bhattacharya P, Ooi BS. The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2039627 |
0.405 |
|
| 2014 |
Jahangir S, Schimpke T, Strassburg M, Grossklaus KA, Millunchick JM, Bhattacharya P. Red-Emitting ( \(\lambda = 610\) nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon Ieee Journal of Quantum Electronics. 50: 530-537. DOI: 10.1109/Jqe.2014.2323952 |
0.439 |
|
| 2014 |
Banerjee A, Frost T, Jahangir S, Bhattacharya P. Green-Emitting $(\lambda=525~{\rm nm})$ InGaN/GaN Quantum Dot Light Emitting Diodes Grown on Quantum Dot Dislocation Filters Ieee Journal of Quantum Electronics. 50: 228-235. DOI: 10.1109/Jqe.2014.2304954 |
0.787 |
|
| 2014 |
Bhowmick S, Baten MZ, Frost T, Ooi BS, Bhattacharya P. High performance InAs/In0.53Ga0.23Al 0.24As/InP quantum dot 1.55 μ tunnel injection laser Ieee Journal of Quantum Electronics. 50: 7-14. DOI: 10.1109/Jqe.2013.2290943 |
0.48 |
|
| 2014 |
Jahangir S, Pietzonka I, Strassburg M, Bhattacharya P. Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes Applied Physics Letters. 105: 111117. DOI: 10.1063/1.4896304 |
0.502 |
|
| 2013 |
Bhattacharya P, Xiao B, Das A, Bhowmick S, Heo J. Solid state electrically injected exciton-polariton laser. Physical Review Letters. 110: 206403. PMID 25167434 DOI: 10.1103/Physrevlett.110.206403 |
0.73 |
|
| 2013 |
Bhowmick S, Frost T, Bhattacharya P. Quantum dot rolled-up microtube optoelectronic integrated circuit. Optics Letters. 38: 1685-7. PMID 23938911 |
0.355 |
|
| 2013 |
Heo J, Jahangir S, Xiao B, Bhattacharya P. Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity. Nano Letters. 13: 2376-80. PMID 23634649 DOI: 10.1021/Nl400060J |
0.729 |
|
| 2013 |
Deshpande S, Heo J, Das A, Bhattacharya P. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire. Nature Communications. 4: 1675. PMID 23575679 DOI: 10.1038/Ncomms2691 |
0.743 |
|
| 2013 |
Das A, Bhattacharya P, Heo J, Banerjee A, Guo W. Polariton Bose-Einstein condensate at room temperature in an Al(Ga)N nanowire-dielectric microcavity with a spatial potential trap. Proceedings of the National Academy of Sciences of the United States of America. 110: 2735-40. PMID 23382183 DOI: 10.1073/Pnas.1210842110 |
0.804 |
|
| 2013 |
Frost T, Banerjee A, Sun K, Chuang SL, Bhattacharya P. InGaN/GaN Quantum Dot Red $(\lambda=630~{\rm nm})$ Laser Ieee Journal of Quantum Electronics. 49: 923-931. DOI: 10.1109/Jqe.2013.2281062 |
0.783 |
|
| 2013 |
Deshpande S, Bhattacharya P. An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K Applied Physics Letters. 103: 241117. DOI: 10.1063/1.4848195 |
0.483 |
|
| 2013 |
Heo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy Applied Physics Letters. 103: 181102. DOI: 10.1063/1.4827338 |
0.724 |
|
| 2013 |
Shao L, Zhang M, Banerjee A, Bhattacharya PK, Pipe KP. Electrically driven nanoscale acoustic source based on a two-dimensional electron gas Applied Physics Letters. 103. DOI: 10.1063/1.4818550 |
0.732 |
|
| 2013 |
Deshpande S, Das A, Bhattacharya P. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire Applied Physics Letters. 102: 161114. DOI: 10.1063/1.4803441 |
0.499 |
|
| 2013 |
You G, Guo W, Zhang C, Bhattacharya P, Henderson R, Xu J. Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires Applied Physics Letters. 102: 91105. DOI: 10.1063/1.4794418 |
0.476 |
|
| 2013 |
Banerjee A, Frost T, Jahangir S, Stark E, Bhattacharya P. InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy Journal of Crystal Growth. 378: 566-570. DOI: 10.1016/J.Jcrysgro.2012.12.158 |
0.786 |
|
| 2013 |
Jahangir S, Banerjee A, Bhattacharya P. Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes Physica Status Solidi (C). 10: 812-815. DOI: 10.1002/Pssc.201200583 |
0.78 |
|
| 2013 |
Banerjee A, Frost T, Jahangir S, Stark E, Bhattacharya P. Ridge waveguide InGaN/GaN quantum dot edge emitting visible lasers Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 816-819. DOI: 10.1002/Pssc.201200577 |
0.796 |
|
| 2012 |
Das A, Heo J, Bayraktaroglu A, Guo W, Ng TK, Phillips J, Ooi BS, Bhattacharya P. Room temperature strong coupling effects from single ZnO nanowire microcavity. Optics Express. 20: 11830-7. PMID 22714170 DOI: 10.1364/Oe.20.011830 |
0.746 |
|
| 2012 |
Heo J, Bhattacharya P. Monolithic single gallium nitride nanowire laser on silicon Spie Newsroom. DOI: 10.1117/2.1201201.004070 |
0.679 |
|
| 2012 |
Lee C, Frost T, Guo W, Bhattacharya P. Integration of 1.3- $\mu{\rm m}$ Quantum-Dot Lasers With ${\rm Si}_{3}{\rm N}_{4}$ Waveguides for Single Mode Optical Interconnects Ieee Journal of Quantum Electronics. 48: 1346-1351. DOI: 10.1109/Jqe.2012.2210196 |
0.782 |
|
| 2012 |
Heo J, Bhowmick S, Bhattacharya P. Threshold Characteristics of Quantum Dot Rolled-Up Microtube Lasers Ieee Journal of Quantum Electronics. 48: 927-933. DOI: 10.1109/Jqe.2012.2197177 |
0.737 |
|
| 2012 |
Jahangir S, Doǧan F, Kum H, Manchon A, Bhattacharya P. Spin diffusion in bulk GaN measured with MnAs spin injector Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.035315 |
0.738 |
|
| 2012 |
Das A, Bhattacharya P, Banerjee A, Jankowski M. Dynamic polariton condensation in a single GaN nanowire-dielectric microcavity Physical Review B. 85: 195321. DOI: 10.1103/Physrevb.85.195321 |
0.723 |
|
| 2012 |
Bhowmick S, Heo J, Bhattacharya P. A quantum dot rolled-up microtube directional coupler Applied Physics Letters. 101. DOI: 10.1063/1.4764530 |
0.721 |
|
| 2012 |
Das A, Xiao B, Bhowmick S, Bhattacharya P. Polariton emission characteristics of a modulation-doped multiquantum-well microcavity diode Applied Physics Letters. 101: 131112. DOI: 10.1063/1.4755777 |
0.468 |
|
| 2012 |
ElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, Ooi BS. Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots Journal of Applied Physics. 112: 063506. DOI: 10.1063/1.4751434 |
0.471 |
|
| 2012 |
Kum H, Heo J, Jahangir S, Banerjee A, Guo W, Bhattacharya P. Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts Applied Physics Letters. 100. DOI: 10.1063/1.4711850 |
0.784 |
|
| 2012 |
Bhattacharya P, Das A, Bhowmick S, Jankowski M, Lee CS. Effect of magnetic field on polariton emission characteristics of a quantum-well microcavity diode Applied Physics Letters. 100: 171106. DOI: 10.1063/1.4707155 |
0.755 |
|
| 2011 |
Heo J, Jiang Z, Xu J, Bhattacharya P. Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon. Optics Express. 19: 26394-8. PMID 22274223 DOI: 10.1364/Oe.19.026394 |
0.77 |
|
| 2011 |
Banerjee A, Doğan F, Heo J, Manchon A, Guo W, Bhattacharya P. Spin relaxation in InGaN quantum disks in GaN nanowires. Nano Letters. 11: 5396-400. PMID 22049993 DOI: 10.1021/Nl203091F |
0.81 |
|
| 2011 |
Das A, Heo J, Jankowski M, Guo W, Zhang L, Deng H, Bhattacharya P. Room temperature ultralow threshold GaN nanowire polariton laser. Physical Review Letters. 107: 066405. PMID 21902349 DOI: 10.1103/Physrevlett.107.066405 |
0.73 |
|
| 2011 |
Khan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS. Effect of the number of stacking layers on the characteristics of quantum-dash lasers. Optics Express. 19: 13378-13385. PMID 21747493 DOI: 10.1364/Oe.19.013378 |
0.442 |
|
| 2011 |
Guo W, Zhang M, Bhattacharya P, Heo J. Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics. Nano Letters. 11: 1434-8. PMID 21366223 DOI: 10.1021/Nl103649D |
0.713 |
|
| 2011 |
Lee C, Frost T, Bhattacharya P. High temperature stability in integrable quantum dot lasers with dry etched mirror facets for on-chip optical interconnects Photomedicine and Laser Surgery. 703-704. DOI: 10.1109/Pho.2011.6110744 |
0.762 |
|
| 2011 |
Banerjee A, Heo J, Bhattacharya P. Spin lifetimes in wurtzite InGaN/ GaN quantum disk-in-nanowire heterostructures from time resolved photoluminescence measurements Photomedicine and Laser Surgery. 531-532. DOI: 10.1109/Pho.2011.6110656 |
0.821 |
|
| 2011 |
Das A, Heo J, Jankowski M, Guo W, Zhang L, Deng H, Bhattacharya P. Room temperature polariton lasing from a single GaN nanowire microcavity Photomedicine and Laser Surgery. 119-120. DOI: 10.1109/Pho.2011.6110454 |
0.744 |
|
| 2011 |
Bhattacharya P, Basu D, Das A, Saha D. Quantum dot polarized light sources Semiconductor Science and Technology. 26: 14002. DOI: 10.1088/0268-1242/26/1/014002 |
0.813 |
|
| 2011 |
Shao L, Zhang M, Banerjee A, Bhattacharya P, Pipe KP. Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99: 243507. DOI: 10.1063/1.3665625 |
0.729 |
|
| 2011 |
Kum H, Jahangir S, Basu D, Saha D, Bhattacharya P. Gate control and amplification of magnetoresistance in a three-terminal device Applied Physics Letters. 99. DOI: 10.1063/1.3652765 |
0.801 |
|
| 2011 |
Zhang M, Banerjee A, Lee C, Hinckley JM, Bhattacharya P. A InGaN/GaN quantum dot green (λ=524 nm) laser Applied Physics Letters. 98: 221104. DOI: 10.1063/1.3596436 |
0.824 |
|
| 2011 |
Guo W, Banerjee A, Bhattacharya PK, Ooi BS. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon Applied Physics Letters. 98: 193102. DOI: 10.1063/1.3588201 |
0.78 |
|
| 2011 |
Guo W, Banerjee A, Zhang M, Bhattacharya P. Barrier height of Pt–InxGa1−xN (0≤x≤0.5) nanowire Schottky diodes Applied Physics Letters. 98: 183116. DOI: 10.1063/1.3579143 |
0.753 |
|
| 2011 |
Heo J, Guo W, Bhattacharya P. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon Applied Physics Letters. 98: 21110. DOI: 10.1063/1.3540688 |
0.721 |
|
| 2011 |
Lee CS, Bhattacharya P, Frost T, Guo W. Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser Applied Physics Letters. 98: 11103. DOI: 10.1063/1.3535607 |
0.754 |
|
| 2011 |
Zhang M, Banerjee A, Bhattacharya P. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm) Journal of Crystal Growth. 323: 470-472. DOI: 10.1016/J.Jcrysgro.2010.12.038 |
0.794 |
|
| 2010 |
Guo W, Zhang M, Banerjee A, Bhattacharya P. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Letters. 10: 3355-9. PMID 20701296 DOI: 10.1021/Nl101027X |
0.787 |
|
| 2010 |
Heo J, Zhu T, Zhang C, Xu J, Bhattacharya P. Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots. Optics Letters. 35: 547-9. PMID 20160813 DOI: 10.1364/Ol.35.000547 |
0.765 |
|
| 2010 |
Bhattacharya P, Zhang M, Hinckley J. Tunnel injection In0.25Ga0.75N/GaN quantum dot light-emitting diodes Applied Physics Letters. 97: 251107. DOI: 10.1063/1.3527935 |
0.508 |
|
| 2010 |
Basu D, Kum H, Bhattacharya P, Saha D. Characteristics of a high temperature vertical spin valve Applied Physics Letters. 97. DOI: 10.1063/1.3524820 |
0.792 |
|
| 2010 |
Zhang M, Bhattacharya P, Guo W. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop Applied Physics Letters. 97: 011103. DOI: 10.1063/1.3460921 |
0.518 |
|
| 2010 |
Zhang M, Bhattacharya P, Guo W, Banerjee A. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions Applied Physics Letters. 96: 132103. DOI: 10.1063/1.3374882 |
0.768 |
|
| 2010 |
Lee CS, Guo W, Basu D, Bhattacharya P. High performance tunnel injection quantum dot comb laser Applied Physics Letters. 96: 101107. DOI: 10.1063/1.3358142 |
0.822 |
|
| 2010 |
Bhattacharya P, Das A, Basu D, Guo W, Heo J. An electrically injected quantum dot spin polarized single photon source Applied Physics Letters. 96: 101105. DOI: 10.1063/1.3357426 |
0.838 |
|
| 2009 |
Kum H, Basu D, Bhattacharya P, Guo W. Electric field control of magnetoresistance in a lateral InAs quantum well spin valve Applied Physics Letters. 95. DOI: 10.1063/1.3268432 |
0.801 |
|
| 2009 |
Yuan HC, Shin J, Qin G, Sun L, Bhattacharya P, Lagally MG, Celler GK, Ma Z. Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes Applied Physics Letters. 94. DOI: 10.1063/1.3062938 |
0.758 |
|
| 2008 |
Yang J, Bhattacharya P. Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon. Optics Express. 16: 5136-40. PMID 18542613 DOI: 10.1364/Oe.16.005136 |
0.5 |
|
| 2008 |
Yang J, Heo J, Zhu T, Xu J, Topolancik J, Vollmer F, Ilic R, Bhattacharya P. Enhanced photoluminescence from embedded PbSe colloidal quantum dots in silicon-based random photonic crystal microcavities Applied Physics Letters. 92: 261110. DOI: 10.1063/1.2954007 |
0.828 |
|
| 2008 |
Rupani RA, Ghosh S, Su X, Bhattacharya P. Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors Microelectronics Journal. 39: 307-313. DOI: 10.1016/J.Mejo.2007.07.108 |
0.6 |
|
| 2007 |
Shin J, Bhattacharya P, Yuan HC, Ma Z, Váró G. Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver. Optics Letters. 32: 500-2. PMID 17392901 DOI: 10.1364/Ol.32.000500 |
0.73 |
|
| 2007 |
George AA, Smowton PM, Mi Z, Bhattacharya P. Long wavelength quantum-dot lasers selectively populated using tunnel injection Semiconductor Science and Technology. 22: 557-560. DOI: 10.1088/0268-1242/22/5/018 |
0.632 |
|
| 2007 |
Bhattacharya PK. Photonic crystal devices Journal of Physics D: Applied Physics. 40. DOI: 10.1088/0022-3727/40/9/E01 |
0.385 |
|
| 2006 |
Bhattacharya P, Mi Z, Su X. High-performance quantum dot optoelectronic devices Frontiers in Optics. DOI: 10.1364/Fio.2006.Fwg1 |
0.769 |
|
| 2006 |
Zhu ZM, Bhattacharya P, Plis E, Su XH, Krishna S. Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters Journal of Physics D: Applied Physics. 39: 4997-5001. DOI: 10.1088/0022-3727/39/23/015 |
0.518 |
|
| 2006 |
Tan H, Kamath KK, Mi Z, Bhattacharya P, Klotzkin D. Analysis of the reduced thermal conductivity in InGaAs∕GaAs quantum dot lasers from chirp characteristics Applied Physics Letters. 89: 121116. DOI: 10.1063/1.2354415 |
0.569 |
|
| 2005 |
Chakravarty S, Topol'ancik J, Bhattacharya P, Chakrabarti S, Kang Y, Meyerhoff ME. Ion detection with photonic crystal microcavities. Optics Letters. 30: 2578-80. PMID 16208905 DOI: 10.1364/Ol.30.002578 |
0.326 |
|
| 2005 |
Chakrabarti S, Holub MA, Bhattacharya P, Mishima TD, Santos MB, Johnson MB, Blom DA. Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner. Nano Letters. 5: 209-12. PMID 15794597 DOI: 10.1021/Nl048613N |
0.826 |
|
| 2005 |
Zhu Z, Plis E, Amtout A, Bhattacharya P, Krishna S. Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee01-08 |
0.789 |
|
| 2005 |
Shin J, Bhattacharya P, Xu J, Váró G. Erratum: Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver (Optics Letters) Optics Letters. 30. DOI: 10.1364/Ol.30.000335 |
0.706 |
|
| 2005 |
Ledentsov NN, Kovsh AR, Shchukin VA, Mikhrin SS, Krestnikov IL, Kozhukhov AV, Karachinsky LY, Maximov MV, Novikov II, Shernyakov YM, Soshnikov IP, Zhukov AE, Portnoi EL, Ustinov VM, Gerthsen D, ... Bhattacharya PK, et al. QD lasers : Physics and applications Proceedings of Spie. 5624: 335-344. DOI: 10.1117/12.570284 |
0.48 |
|
| 2005 |
Chakrabarti S, Stiff-Roberts AD, Su XH, Bhattacharya PK, Ariyawansa G, Perera AGU. High-performance mid-infrared quantum dot infrared photodetectors Journal of Physics D. 38: 2135-2141. DOI: 10.1088/0022-3727/38/13/009 |
0.728 |
|
| 2005 |
Norris TB, Kim K, Urayama J, Wu ZK, Singh J, Bhattacharya PK. Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots Journal of Physics D: Applied Physics. 38: 2077-2087. DOI: 10.1088/0022-3727/38/13/003 |
0.472 |
|
| 2005 |
Mi Z, Bhattacharya P. Molecular-beam epitaxial growth and characteristics of highly uniform InAs∕GaAs quantum dot layers Journal of Applied Physics. 98: 023510. DOI: 10.1063/1.1985969 |
0.635 |
|
| 2004 |
Shin J, Bhattacharya P, Xu J, Váró G. Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver. Optics Letters. 29: 2264-6. PMID 15524375 DOI: 10.1364/Ol.29.002264 |
0.734 |
|
| 2004 |
Xu J, Bhattacharya P, Váró G. Monolithically integrated bacteriorhodopsin/semiconductor opto-electronic integrated circuit for a bio-photoreceiver. Biosensors and Bioelectronics. 19: 885-892. PMID 15128108 DOI: 10.1016/J.Bios.2003.08.018 |
0.321 |
|
| 2004 |
Li Q, Stuart JA, Birge RR, Xu J, Stickrath A, Bhattacharya P. Photoelectric response of polarization sensitive bacteriorhodopsin films. Biosensors & Bioelectronics. 19: 869-74. PMID 15128106 DOI: 10.1016/J.Bios.2003.08.017 |
0.371 |
|
| 2004 |
Topol'ančik J, Pradhan S, Yu PC, Ghosh S, Bhattacharya P. Electrically injected photonic crystal edge-emitting quantum-dot light source Ieee Photonics Technology Letters. 16: 960-962. DOI: 10.1109/Lpt.2004.824657 |
0.743 |
|
| 2003 |
Bhattacharya P, Fathpour S, Chakrabarti S, Holub M, Ghosh S. Application of Diluted Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources Mrs Proceedings. 794. DOI: 10.1557/Proc-794-T8.1 |
0.837 |
|
| 2003 |
Chakrabarti S, Bhattacharya PK, Stiff-Roberts AD, Lin YY, Singh J, Lei Y, Browning N. Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection Journal of Physics D. 36: 1794-1797. DOI: 10.1088/0022-3727/36/15/308 |
0.727 |
|
| 2002 |
Bhattacharya P, Xu J, Váró G, Marcy DL, Birge RR. Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver. Optics Letters. 27: 839-41. PMID 18007945 DOI: 10.1364/Ol.27.000839 |
0.428 |
|
| 2002 |
Lenihan AS, Gurudev Dutt MV, Steel DG, Ghosh S, Bhattacharya PK. Raman coherence beats from entangled polarization eigenstates in InAs quantum dots. Physical Review Letters. 88: 223601. PMID 12059418 DOI: 10.1103/Physrevlett.88.223601 |
0.585 |
|
| 2002 |
Bai X, Kurdak Ç, Krishna S, Bhattacharya P. Quantum-well-based phonon detectors; performance analysis Physica B-Condensed Matter. 316: 362-365. DOI: 10.1016/S0921-4526(02)00508-2 |
0.554 |
|
| 2001 |
Bhattacharya P, Krishna S, Stiff A. Quantum Dot Intersubband Devices The Japan Society of Applied Physics. 2001: 288-289. DOI: 10.7567/Ssdm.2001.D-4-1 |
0.581 |
|
| 2001 |
Sabarinathan J, Bhattacharya P, Zhu D, Kochman B, Zhou W, Yu P. Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth Applied Physics Letters. 78: 3024-3026. DOI: 10.1063/1.1372198 |
0.778 |
|
| 2001 |
Bhattacharya P, Krishna S, Phillips J, McCann PJ, Namjou K. Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors Journal of Crystal Growth. 227: 27-35. DOI: 10.1016/S0022-0248(01)00627-3 |
0.708 |
|
| 2000 |
Krishna S, Sabarinathan J, Linder K, Bhattacharya P, Lita B, Goldman RS. Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1502-1506. DOI: 10.1116/1.591413 |
0.814 |
|
| 2000 |
Krishna S, Qasaimeh O, Bhattacharya P, McCann PJ, Namjou K. Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser Applied Physics Letters. 76: 3355-3357. DOI: 10.1063/1.126646 |
0.774 |
|
| 2000 |
Bhattacharya P. Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices Optical and Quantum Electronics. 32: 211-225. DOI: 10.1023/A:1007065203823 |
0.501 |
|
| 1999 |
Krishna S, Linder K, Bhattacharya P. Photoluminescence linewidth of self-organized In0.4Ga0.6As/GaAs quantum dots grown on InGaAlAs stressor dots Journal of Applied Physics. 86: 4691-4693. DOI: 10.1063/1.371421 |
0.61 |
|
| 1999 |
Bhattacharya P, Zhou W, Zhu D, Sabarinathan J. Photonic stopbands and light transmission characteristics in GaAs-based three dimensional waveguides with large index contrast Applied Physics Letters. 75: 1670-1672. DOI: 10.1063/1.124786 |
0.785 |
|
| 1999 |
Zhou W, Qasaimeh O, Phillips J, Krishna S, Bhattacharya P. Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers Applied Physics Letters. 74: 783-785. DOI: 10.1063/1.123366 |
0.823 |
|
| 1998 |
Bhattacharya P. Quantum dot semiconductor lasers International Journal of High Speed Electronics and Systems. 9: 1081-1107. DOI: 10.1142/S0129156498000427 |
0.515 |
|
| 1998 |
Bhattacharya P. Tunnel injection lasers International Journal of High Speed Electronics and Systems. 9: 847-866. DOI: 10.1142/S0129156498000361 |
0.398 |
|
| 1998 |
Bhattacharya P, Zhang X, Kamath KK, Klotzkin D, Phillips JD, Caneau C, Bhat RJ. High-speed quantum well and quantum dot lasers Proceedings of Spie. 3547: 350-360. DOI: 10.1117/12.319650 |
0.631 |
|
| 1998 |
Bhattacharya P, Zhang X, Yuan Y, Kamath KK, Klotzkin D, Caneau C, Bhat RJ. High-speed tunnel injection quantum well and quantum dot lasers High-Power Lasers and Applications. 3283: 702-709. DOI: 10.1117/12.316722 |
0.473 |
|
| 1995 |
Barnett BC, Rahman L, Islam MN, Chen YC, Bhattacharya P, Riha W, Reddy KV, Howe AT, Stair KA, Iwamura H, Friberg SR, Mukai T. High-power erbium-doped fiber laser mode locked by a semiconductor saturable absorber Optics Letters. 20: 471-473. PMID 19859224 DOI: 10.1364/Ol.20.000471 |
0.303 |
|
| 1995 |
Sethi S, Bhattacharya PK, Mansfield J. Backgating in Pseudomorphic In0.15Ga0.85As/Al0.25Ga0.75As MODFET's with a GaAs:Er Buffer Layer Ieee Electron Device Letters. 16: 537-539. DOI: 10.1109/55.475579 |
0.336 |
|
| 1995 |
Sethi S, Brock T, Bhattacharya PK, Kim J, Williamson S, Craig D, Nees J. High-Speed Metal-Semiconductor-Metal Photodiodes with Er-doped GaAs Ieee Electron Device Letters. 16: 106-108. DOI: 10.1109/55.363239 |
0.301 |
|
| 1995 |
Bhattacharya P. MBE growth and device applications of lattice-matched and strained heterostructures on (n11)-oriented and patterned substrates Microelectronics Journal. 26: 887-896. DOI: 10.1016/0026-2692(95)00050-X |
0.434 |
|
| 1994 |
Munns GO, Chen WL, Sherwin ME, Knightly D, Haddad GI, Davis L, Bhattacharya PK. Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy Journal of Crystal Growth. 136: 166-172. DOI: 10.1016/0022-0248(94)90403-0 |
0.354 |
|
| 1994 |
Chen WL, Munns GO, Davis L, Bhattacharya PK, Haddad GI. The growth of resonant tunneling hot electron transistors using chemical beam epitaxy Journal of Crystal Growth. 136: 50-55. DOI: 10.1016/0022-0248(94)90382-4 |
0.39 |
|
| 1993 |
Tanaka T, Singh J, Arakawa Y, Bhattacharya P. Near band edge polarization dependence as a probe of structural symmetry in GaAs/AlGaAs quantum dot structures Applied Physics Letters. 62: 756-758. DOI: 10.1063/1.108569 |
0.464 |
|
| 1992 |
Singh J, Arakawa Y, Bhattacharya P. Consequences of structural disorder on laser properties in quantum wire lasers Ieee Photonics Technology Letters. 4: 835-837. DOI: 10.1109/68.149879 |
0.358 |
|
| 1992 |
Li WQ, Bhattacharya PK. Molecular beam epitaxial GaAs/AlGaAs heterojunction bipolar transistors on Ieee Electron Device Letters. 13: 29-31. DOI: 10.1109/55.144941 |
0.351 |
|
| 1992 |
Sherwin ME, Munns GO, Nichols DT, Bhattacharya PK, Terry FL. The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm Journal of Crystal Growth. 120: 162-166. DOI: 10.1016/0022-0248(92)90383-T |
0.4 |
|
| 1991 |
Li WQ, Bhattacharya PK. Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on Ieee Electron Device Letters. 12: 385-386. DOI: 10.1109/55.103615 |
0.324 |
|
| 1991 |
Alterovitz SA, Sieg RM, Yao HD, Snyder PG, Woollam JA, Pamulapati J, Bhattacharya PK, Sekula-Moise PAPA. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry Thin Solid Films. 206: 288-293. DOI: 10.1016/0040-6090(91)90437-3 |
0.349 |
|
| 1991 |
Kim JH, Yang D, Chen YC, Bhattacharya PK. Growth and properties of InAsxSb1−x, AlyGa1−ySb, and InAsxSb1−x/AlyGa1−ySb heterostructures Journal of Crystal Growth. 111: 633-637. DOI: 10.1016/0022-0248(91)91054-E |
0.388 |
|
| 1991 |
Chen YC, Bhattacharya PK, Singh J. Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality Journal of Crystal Growth. 111: 228-232. DOI: 10.1016/0022-0248(91)90976-C |
0.346 |
|
| 1990 |
Biswas D, Bhattacharya PK, Singh J. Temperature invariance of quantum well modulators using a feedback circuit based on the quantum confined Stark effect. Applied Optics. 29: 3900-4. PMID 20577311 DOI: 10.1364/Ao.29.003900 |
0.406 |
|
| 1990 |
Chang K, Bhattacharya P, Lai R. Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance Journal of Applied Physics. 67: 3323-3327. DOI: 10.1063/1.345368 |
0.369 |
|
| 1990 |
Pamulapati J, Bhattacharya PK. Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy Applied Physics Letters. 56: 103-104. DOI: 10.1063/1.103045 |
0.337 |
|
| 1990 |
Hong S, Loehr JP, Goswami S, Bhattacharya PK, Singh J. Photocurrent and intrinsic modulation speeds in P-I(MQW)-N GaAs/AlGaAs stark effect modulators Superlattices and Microstructures. 8: 41-45. DOI: 10.1016/0749-6036(90)90272-9 |
0.364 |
|
| 1990 |
Pamulapati J, Loehr JP, Singh J, Bhattacharya PK, Ludowise MJ. Electro-optic effect in strained and lattice matched multiquantum well structures-role of excitonic resonances Superlattices and Microstructures. 8: 317-321. DOI: 10.1016/0749-6036(90)90256-7 |
0.393 |
|
| 1990 |
Goswami S, Bhattacharya PK, Singh J. Wavelength selective detection using excitonic resonances in GaAs/AlGaAs P-I-(MQW)-N structures Superlattices and Microstructures. 7: 423-426. DOI: 10.1016/0749-6036(90)90238-3 |
0.384 |
|
| 1990 |
Merlin R, Mestres N, McKiernan A, Oh J, Bhattacharya PK. Charge-density domains in photoexcited quantum-well structures Surface Science. 228: 88-91. DOI: 10.1016/0039-6028(90)90265-A |
0.346 |
|
| 1990 |
Wang H, Remillard JT, Webb MD, Steel DG, Pamulapati J, Oh J, Bhattacharya PK. High resolution laser spectroscopy of relaxation and the excitation lineshape of excitons in GaAs quantum well structures Surface Science. 228: 69-73. DOI: 10.1016/0039-6028(90)90261-6 |
0.433 |
|
| 1990 |
Oh JE, Bhattacharya PK, Singh J, Dos Passos W, Clarke R, Mestres N, Merlin R, Chang KH, Gibala R. Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures Surface Science. 228: 16-19. DOI: 10.1016/0039-6028(90)90248-7 |
0.343 |
|
| 1989 |
Remillard JT, Wang H, Webb MD, Steel DG, Oh J, Pamulapati J, Bhattacharya PK. High-resolution nonlinear laser spectroscopy of room-temperature GaAs quantum-well structures: observation of interference effects. Optics Letters. 14: 1131-3. PMID 19753078 DOI: 10.1364/Ol.14.001131 |
0.416 |
|
| 1989 |
Remillard JT, Wang H, Steel DG, Oh J, Pamulapati J, Bhattacharya PK. High-resolution nonlinear laser spectroscopy of heavy-hole excitons in GaAs/AlGaAs quantum-well structures: A direct measure of the exciton line shape. Physical Review Letters. 62: 2861-2864. PMID 10040110 DOI: 10.1103/Physrevlett.62.2861 |
0.311 |
|
| 1989 |
Debbar N, Biswas D, Bhattacharya P. Conduction-band offsets in pseudomorphic In x Ga 1-x As/Al 0.2 Ga 0.8 As quantum wells (0.07<=x<=0.18) measured by deep-level transient spectroscopy Physical Review B. 40: 1058-1063. PMID 9991928 DOI: 10.1103/Physrevb.40.1058 |
0.377 |
|
| 1989 |
Bhattacharya P. Strained InGaAs/InAiAS High Eledron Mobility Transistors Defence Science Journal. 39: 397-410. DOI: 10.14429/Dsj.39.4788 |
0.375 |
|
| 1989 |
Chin A, Bhattacharya P, Chang KH, Biswas D. Optical and structural properties of molecular‐beam epitaxial GaAs on sapphire Journal of Vacuum Science & Technology B. 7: 283-288. DOI: 10.1116/1.584734 |
0.385 |
|
| 1989 |
Chang KH, Bhattacharya PK, Gibala R. Transmission electron microscopy of strained InyGa1−yAs/GaAs multiquantum wells: The generation of misfit dislocations Journal of Applied Physics. 65: 3391-3394. DOI: 10.1063/1.342654 |
0.437 |
|
| 1989 |
Debbar N, Hong S, Singh J, Bhattacharya P, Sahai R. Coupled GaAs/AlGaAs quantum-well electroabsorption modulators for low-electric-field optical modulation Journal of Applied Physics. 65: 383-385. DOI: 10.1063/1.342554 |
0.434 |
|
| 1989 |
Pamulapati J, Berger P, Chang K, Oh J, Chen Y, Singh J, Bhattacharya P, Gibala R. Growth phenomena and characteristics of strained InxGa1−xAs on GaAs Journal of Crystal Growth. 95: 193-196. DOI: 10.1016/0022-0248(89)90380-1 |
0.623 |
|
| 1989 |
Biswas D, Berger PR, Das U, Oh JE, Bhattacharya PK. Investigation of the interface region produced by molecular beam epitaxial regrowth Journal of Electronic Materials. 18: 137-142. DOI: 10.1007/Bf02657399 |
0.599 |
|
| 1988 |
Singh J, Hong S, Bhattacharya PK, Sahai R. Quantum confined Stark effect of excitonic transitions in GaAs/AIGaAs MQW structures for implementation of neural networks: basic device requirements. Applied Optics. 27: 4554-61. PMID 20539607 DOI: 10.1364/Ao.27.004554 |
0.354 |
|
| 1988 |
Hong WP, Bhattacharya P. DC and Microwave Characteristics of InAlAs/InGaAs Single-Quantum-Well MODFET's with GaAs Gate Barriers Ieee Electron Device Letters. 9: 352-354. DOI: 10.1109/55.741 |
0.425 |
|
| 1988 |
Zebda Y, Lipa R, Tutt M, Pavlidis D, Bhattacharya PK, Pamulapati J, Oh JE. Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers Ieee Transactions On Electron Devices. 35: 2435. DOI: 10.1109/16.8848 |
0.416 |
|
| 1988 |
Berger PR, Chang K, Bhattacharya P, Singh J, Bajaj KK. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime Applied Physics Letters. 53: 684-686. DOI: 10.1063/1.99850 |
0.579 |
|
| 1988 |
Berger PR, Chen Y, Bhattacharya P, Pamulapati J, Vezzoli GC. Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler Applied Physics Letters. 52: 1125-1127. DOI: 10.1063/1.99182 |
0.61 |
|
| 1988 |
Kothiyal GP, Bhattacharya P. Optical properties and Stokes shifts in lamp-annealed InGaAs/GaAs strained layer superlattice Journal of Applied Physics. 63: 2760-2764. DOI: 10.1063/1.341132 |
0.392 |
|
| 1988 |
Das U, Chen Y, Bhattacharya PK, Berger PR. Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides Applied Physics Letters. 53: 2129-2131. DOI: 10.1063/1.100295 |
0.618 |
|
| 1988 |
Bhattacharya PK, Dhar S. Chapter 3: Deep Levels in 111-V Compound Semiconductors Grown by Molecular Beam Epitaxy Semiconductors and Semimetals. 26: 143-228. DOI: 10.1016/S0080-8784(08)60121-0 |
0.358 |
|
| 1987 |
Bhattacharya P, Burnham R, Chemla D, Dohler G, Gibbs HM, Majerfeld A, Smith PW, Stillman G, Temkin H, Gunshor RL. III. Multiple-quantum wells. Applied Optics. 26: 216-20. PMID 20454113 DOI: 10.1364/Ao.26.000216 |
0.413 |
|
| 1987 |
Das U, Berger PR, Bhattacharya PK. InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide. Optics Letters. 12: 820-2. PMID 19741884 DOI: 10.1364/Ol.12.000820 |
0.639 |
|
| 1987 |
Bhattacharya PK, Chin A, Seo KS. A Controlled-Avalanche Superlattice Transistor Ieee Electron Device Letters. 8: 19-21. DOI: 10.1109/Edl.1987.26536 |
0.306 |
|
| 1987 |
Das U, Zebda Y, Bhattacharya P, Chin A. Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes Applied Physics Letters. 51: 1164-1166. DOI: 10.1063/1.98720 |
0.43 |
|
| 1987 |
Das U, Chen Y, Bhattacharya P. Nonlinear effects in coplanar GaAs/InGaAs strained‐layer superlattice directional couplers Applied Physics Letters. 51: 1679-1681. DOI: 10.1063/1.98541 |
0.397 |
|
| 1987 |
Chang KH, Berger PR, Singh J, Bhattacharya PK. Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs Applied Physics Letters. 51: 261-263. DOI: 10.1063/1.98467 |
0.635 |
|
| 1987 |
Li W, Bhattacharya PK, Juang F. Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode Applied Physics Letters. 50: 1176-1178. DOI: 10.1063/1.97902 |
0.357 |
|
| 1987 |
Chin A, Bhattacharya PK, Kothiyal GP. Growth of GaAs on SiOx by molecular-beam epitaxy Journal of Applied Physics. 62: 1416-1419. DOI: 10.1063/1.339855 |
0.347 |
|
| 1987 |
Debbar N, Bhattacharya P. Carrier dynamics in quantum wells behaving as giant traps Journal of Applied Physics. 62: 3845-3847. DOI: 10.1063/1.339226 |
0.435 |
|
| 1987 |
Berger PR, Bhattacharya PK, Singh J. Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction Journal of Applied Physics. 61: 2856-2860. DOI: 10.1063/1.337880 |
0.598 |
|
| 1987 |
Bajema K, Merlin R, Juang FY, Hong SC, Singh J, Bhattacharya PK. Electric field effects on intersubband transitions in quantum well structures Superlattices and Microstructures. 3: 685-687. DOI: 10.1016/0749-6036(87)90199-6 |
0.361 |
|
| 1987 |
Chen Y, Kothiyal GP, Singh J, Bhattacharya PK. Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systems Superlattices and Microstructures. 3: 657-664. DOI: 10.1016/0749-6036(87)90195-9 |
0.447 |
|
| 1987 |
Juang F, Hong W, Berger P, Bhattacharya P, Das U, Singh J. Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers Journal of Crystal Growth. 81: 373-377. DOI: 10.1016/0022-0248(87)90419-2 |
0.682 |
|
| 1986 |
Ojima M, Chavez-Pirson A, Lee YH, Morhange JF, Gibbs HM, Peyghambarian N, Juang FY, Bhattacharya PK, Weinberger DA. Optical NOR gate using diode laser sources. Applied Optics. 25: 2311. PMID 18231494 DOI: 10.1364/Ao.25.002311 |
0.354 |
|
| 1986 |
Dhar S, Bhattacharya PK, Juang F, Hong W, Sadler RA. Dependence of deep-level parameters in ion-implanted GaAs MESFET's on material preparation Ieee Transactions On Electron Devices. 33: 111-118. DOI: 10.1109/T-Ed.1986.22446 |
0.318 |
|
| 1986 |
Bhattacharya PK, Dhar S, Berger P, Juang F. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping Applied Physics Letters. 49: 470-472. DOI: 10.1063/1.97119 |
0.617 |
|
| 1986 |
Juang F, Singh J, Bhattacharya PK, Bajema K, Merlin R. Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators Applied Physics Letters. 48: 1246-1248. DOI: 10.1063/1.96993 |
0.36 |
|
| 1986 |
Das U, Bhattacharya PK, Dhar S. Low‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlattices Applied Physics Letters. 48: 1507-1509. DOI: 10.1063/1.96902 |
0.361 |
|
| 1986 |
Dhar S, Das U, Bhattacharya PK. Deep levels in as‐grown and Si‐implanted In0.2Ga0.8As–GaAs strained‐layer superlattice optical guiding structures Journal of Applied Physics. 60: 639-642. DOI: 10.1063/1.337406 |
0.36 |
|
| 1986 |
Bhattacharya PK, Das U, Juang FY, Nashimoto Y, Dhar S. Material properties and optical guiding in InGaAs-GaAs strained layer superlattices--a brief review Solid-State Electronics. 29: 261-267. DOI: 10.1016/0038-1101(86)90049-3 |
0.336 |
|
| 1985 |
Seo KS, Dhar S, Bhattacharya PK. High-quality Si-implanted GaAs activated by a two-step rapid thermal annealing technique Applied Physics Letters. 47: 500-502. DOI: 10.1063/1.96106 |
0.311 |
|
| 1985 |
Juang F-, Das U, Nashimoto Y, Bhattacharya PK. Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices Applied Physics Letters. 47: 972-974. DOI: 10.1063/1.95948 |
0.327 |
|
| 1985 |
Bhattacharya PK, Ku JW. Effect of alloy clustering on the high-temperature electron mobility in In1-xGaxAsyP1-y Journal of Applied Physics. 58: 1410-1411. DOI: 10.1063/1.336092 |
0.3 |
|
| 1985 |
Juang F‐, Nashimoto Y, Bhattacharya PK. Molecular beam epitaxial growth and photoluminescence of near‐ideal GaAs‐AlxGa1−xAs single quantum wells Journal of Applied Physics. 58: 1986-1989. DOI: 10.1063/1.336007 |
0.469 |
|
| 1985 |
Dhar S, Seo KS, Bhattacharya PK. Nature and distribution of electrically active defects in Si-implanted and lamp-annealed GaAs Journal of Applied Physics. 58: 4216-4220. DOI: 10.1063/1.335554 |
0.345 |
|
| 1985 |
Tripathi VK, Bhattacharya PK. Electron energy states and miniband parameters in a class of non-uniform quantum well and superlattice structures Superlattices and Microstructures. 1: 73-79. DOI: 10.1016/0749-6036(85)90032-1 |
0.373 |
|
| 1984 |
Bhattacharya PK, Das U, Ludowise MJ. Transport properties of n-type metalorganic chemical-vapor-deposited Al/sub x/Ga/sub 1-x/As (0< or =x< or =0. 6) Physical Review B. DOI: 10.1103/Physrevb.29.6623 |
0.324 |
|
| 1984 |
Bhattacharya PK, Matsumoto T, Subramanian S. The relation of dominant deep levels in MOCVD AlxGa1-xAs with growth conditions Journal of Crystal Growth. 68: 301-304. DOI: 10.1016/0022-0248(84)90429-9 |
0.313 |
|
| 1983 |
Bhattacharya PK, Rao MV, Tsai M. Growth and photoluminescence spectra of high‐purity liquid phase epitaxial In0.53Ga0.47As Journal of Applied Physics. 54: 5096-5102. DOI: 10.1063/1.332784 |
0.342 |
|
| 1982 |
Matsumoto T, Bhattacharya PK, Darmawan J, Ludowise MJ. Transfer doping effects at the organometallic vapor phase epitaxial AlxGa1−xAs‐substrate GaAs interface Applied Physics Letters. 41: 1075-1077. DOI: 10.1063/1.93406 |
0.33 |
|
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