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Dipankar Saha, Ph.D. - Publications

Affiliations: 
2009 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
semiconductors
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52 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Udai A, Ganguly S, Bhattacharya P, Saha D. Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy. Nanotechnology. PMID 35977452 DOI: 10.1088/1361-6528/ac8a50  0.425
2022 Aggarwal T, Udai A, Saha PK, Ganguly S, Bhattacharya P, Saha D. Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs. Acs Applied Materials & Interfaces. 14: 13812-13819. PMID 35262330 DOI: 10.1021/acsami.1c20003  0.488
2021 Udai A, Aiello A, Aggarwal T, Saha D, Bhattacharya P. Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption. Acs Applied Materials & Interfaces. PMID 34495630 DOI: 10.1021/acsami.1c11096  0.48
2020 Saha PK, Aggarwal T, Udai A, Pendem V, Ganguly S, Saha D. Femto-second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural radial potential well and its dynamic modulation Acs Photonics. DOI: 10.1021/Acsphotonics.0C00905  0.32
2020 Rawat A, Surana VK, Ganguly S, Saha D. Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs Solid-State Electronics. 164: 107702. DOI: 10.1016/J.Sse.2019.107702  0.314
2019 Pendem V, Udai A, Aggarwal T, Ganguly S, Saha D. Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core-shell nanostructures. Nanotechnology. PMID 30893662 DOI: 10.1088/1361-6528/Ab1154  0.334
2019 Chouksey S, Sreenadh S, Ganguly S, Saha D. Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion. Nanotechnology. PMID 30665207 DOI: 10.1088/1361-6528/Ab0035  0.352
2019 Rawat A, Surana VK, Meer M, Bhardwaj N, Ganguly S, Saha D. Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO 2 as a Dielectric Ieee Transactions On Electron Devices. 66: 2557-2562. DOI: 10.1109/Ted.2019.2910608  0.342
2019 Sarkar R, Bhunia S, Nag D, Barik BC, Gupta KD, Saha D, Ganguly S, Laha A, Lemettinen J, Kauppinen C, Kim I, Suihkonen S, Gribisch P, Osten H. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Applied Physics Letters. 115: 63502. DOI: 10.1063/1.5109861  0.32
2018 Saha PK, Pendem V, Chouksey S, Aggarwal T, Udai A, Ganguly S, Saha D. Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment. Nanotechnology. PMID 30557860 DOI: 10.1088/1361-6528/Aaf8De  0.337
2018 Sankaranarayanan S, Chouksey S, Saha P, Pendem V, Udai A, Aggarwal T, Ganguly S, Saha D. Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak. Scientific Reports. 8: 8404. PMID 29849038 DOI: 10.1038/S41598-018-26725-6  0.352
2018 Patil A, Saha D, Ganguly S. A Quantum Biomimetic Electronic Nose Sensor. Scientific Reports. 8: 128. PMID 29317716 DOI: 10.1038/S41598-017-18346-2  0.316
2018 Poonia VS, Saha D, Ganguly S. Quantum Biomimetic Modeling of Diamond NV$^{-}$ Center Spin Dynamics Ieee Transactions On Nanotechnology. 17: 231-237. DOI: 10.1109/Tnano.2018.2789824  0.54
2018 Jha J, Upadhyay BB, Takhar K, Bhardwaj N, Ganguly S, Saha D. Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors Journal of Applied Physics. 124: 165704. DOI: 10.1063/1.5044590  0.305
2018 Upadhyay BB, Jha J, Takhar K, Ganguly S, Saha D. Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures Journal of Applied Physics. 123: 205702. DOI: 10.1063/1.5026167  0.324
2017 Chouksey S, Sankaranarayanan S, Pendem V, Saha PK, Ganguly S, Saha D. Strong size dependency on the carrier and photon dynamics in InGaN/GaN single nanowalls determined using photoluminescence and ultrafast transient absorption spectroscopy. Nano Letters. PMID 28735539 DOI: 10.1021/Acs.Nanolett.7B00970  0.322
2017 Saha PK, Chouksey S, Ganguly S, Saha D. Temperature-independent optical transition with sub-nanometer linewidth in thermally diffused Gadolinium in GaN. Optics Letters. 42: 2161-2164. PMID 28569871 DOI: 10.1364/Ol.42.002161  0.309
2017 Upadhyay BB, Takhar K, Jha J, Ganguly S, Saha D. Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs Solid-State Electronics. 141: 1-6. DOI: 10.1016/J.Sse.2017.11.001  0.305
2017 Takhar K, Meer M, Upadhyay BB, Ganguly S, Saha D. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors Solid-State Electronics. 131: 39-44. DOI: 10.1016/J.Sse.2017.02.002  0.304
2017 Kumar AS, Khachariya D, Meer M, Ganguly S, Saha D. Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires (Phys. Status Solidi A 2/2017) Physica Status Solidi (a). 214: 1770107. DOI: 10.1002/Pssa.201770107  0.321
2017 Kumar AS, Khachariya D, Meer M, Ganguly S, Saha D. Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires Physica Status Solidi (a). 214: 1600620. DOI: 10.1002/Pssa.201600620  0.371
2016 Banerjee D, Sankaranarayanan S, Khachariya D, Nadar MB, Ganguly S, Saha D. Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires Applied Physics Letters. 109. DOI: 10.1063/1.4959562  0.328
2016 Sankaranarayanan S, Saha D. Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation Superlattices and Microstructures. 98: 174-180. DOI: 10.1016/J.Spmi.2016.08.017  0.382
2015 Poonia VS, Saha D, Ganguly S. State transitions and decoherence in the avian compass. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 91: 052709. PMID 26066201 DOI: 10.1103/Physreve.91.052709  0.446
2015 Takhar K, Meer M, Khachariya D, Ganguly S, Saha D. Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4928413  0.339
2015 Banerjee D, Takhar K, Sankaranarayanan S, Upadhyay P, Ruia R, Chouksey S, Khachariya D, Ganguly S, Saha D. Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser Applied Physics Letters. 107. DOI: 10.1063/1.4930825  0.342
2014 Sankaranarayanan S, Ganguly S, Saha D. Polarization modulation in GaN-based double-barrier resonant tunneling diodes Applied Physics Express. 7. DOI: 10.7567/Apex.7.095201  0.406
2014 Adari R, Banerjee D, Ganguly S, Saha D. Fermi-level depinning at metal/GaN interface by an insulating barrier Thin Solid Films. 550: 564-568. DOI: 10.1016/J.Tsf.2013.11.041  0.387
2013 Adari R, Banerjee D, Ganguly S, Saha D. Memory Elements Using Multiterminal Magnetoresistive Devices Applied Physics Express. 6: 43002. DOI: 10.7567/Apex.6.043002  0.463
2013 Banerjee D, Adari R, Sankaranarayan S, Kumar A, Ganguly S, Aldhaheri RW, Hussain MA, Balamesh AS, Saha D. Electrical spin injection using GaCrN in a GaN based spin light emitting diode Applied Physics Letters. 103: 242408. DOI: 10.1063/1.4848836  0.631
2013 Suggisetti P, Banerjee D, Adari R, Pande N, Patil T, Ganguly S, Saha D. Room temperature ferromagnetism in thermally diffused Cr in GaN Aip Advances. 3: 32143. DOI: 10.1063/1.4799716  0.307
2012 Banerjee D, Adari RBR, Pramanik T, Ganguly S, Saha D. Effects of Device Geometry on Output Circular Polarization in a Spin-LED Ieee Transactions On Magnetics. 48: 2761-2764. DOI: 10.1109/Tmag.2012.2195649  0.582
2011 Adari R, Sarkar B, Patil T, Banerjee D, Suggisetti P, Ganguly S, Saha D. Temperature Dependent Characteristics of Fe/n-GaN Schottky Diodes The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.P-6-5  0.461
2011 Bhattacharya P, Basu D, Das A, Saha D. Quantum dot polarized light sources Semiconductor Science and Technology. 26: 14002. DOI: 10.1088/0268-1242/26/1/014002  0.82
2011 Kum H, Jahangir S, Basu D, Saha D, Bhattacharya P. Gate control and amplification of magnetoresistance in a three-terminal device Applied Physics Letters. 99. DOI: 10.1063/1.3652765  0.815
2011 Banerjee D, Adari R, Murthy M, Suggisetti P, Ganguly S, Saha D. Modulation bandwidth of a spin laser Journal of Applied Physics. 109. DOI: 10.1063/1.3556959  0.597
2010 Saha D, Basu D, Bhattacharya P. High-frequency dynamics of spin-polarized carriers and photons in a laser Physical Review B. 82: 205309. DOI: 10.1103/Physrevb.82.205309  0.733
2010 Basu D, Kum H, Bhattacharya P, Saha D. Characteristics of a high temperature vertical spin valve Applied Physics Letters. 97. DOI: 10.1063/1.3524820  0.83
2010 Adari R, Patil T, Murthy M, Maheshwari R, Vaidya G, Ganguly S, Saha D. Enhanced magnetoresistance in lateral spin-valves Applied Physics Letters. 97: 112505. DOI: 10.1063/1.3488818  0.583
2009 Basu D, Saha D, Bhattacharya P. Optical polarization modulation and gain anisotropy in an electrically injected spin laser. Physical Review Letters. 102: 093904. PMID 19392521 DOI: 10.1103/Physrevlett.102.093904  0.819
2009 Basu D, Saha D, Bhattacharya P. Erratum: Optical polarization modulation and gain anisotropy in an electrically injected spin laser (Physical Review Letters (2009) 102 (093904)) Physical Review Letters. 102. DOI: 10.1103/Physrevlett.102.129901  0.784
2009 Bhattacharya P, Mi Z, Yang J, Basu D, Saha D. Quantum dot lasers: From promise to high-performance devices Journal of Crystal Growth. 311: 1625-1631. DOI: 10.1016/J.Jcrysgro.2008.09.035  0.781
2008 Saha D, Siddiqui L, Bhattacharya P, Datta S, Basu D, Holub M. Electrically driven spin dynamics of paramagnetic impurities. Physical Review Letters. 100: 196603. PMID 18518470 DOI: 10.1103/Physrevlett.100.196603  0.827
2008 Saha D, Basu D, Bhattacharya P. A monolithically integrated magneto-optoelectronic circuit Applied Physics Letters. 93: 194104. DOI: 10.1063/1.3028092  0.76
2008 Basu D, Saha D, Wu CC, Holub M, Mi Z, Bhattacharya P. Electrically injected InAs∕GaAs quantum dot spin laser operating at 200K Applied Physics Letters. 92: 91119. DOI: 10.1063/1.2883953  0.815
2008 Saha D, Basu D, Holub M, Bhattacharya P. Two-dimensional spin diffusion in multiterminal lateral spin valves Applied Physics Letters. 92: 22507. DOI: 10.1063/1.2834853  0.816
2007 Holub M, Shin J, Saha D, Bhattacharya P. Electrical spin injection and threshold reduction in a semiconductor laser. Physical Review Letters. 98: 146603. PMID 17501298 DOI: 10.1103/Physrevlett.98.146603  0.848
2007 Holub M, Saha D, Bhattacharya P. Magnetoresistance of fully epitaxial MnAs∕GaAs lateral spin valves Journal of Vacuum Science & Technology B. 25: 1004-1008. DOI: 10.1116/1.2715991  0.835
2007 Saha D, Holub M, Bhattacharya P. Amplification of spin-current polarization Applied Physics Letters. 91: 72513. DOI: 10.1063/1.2772660  0.845
2007 Holub M, Bhattacharya P, Shin J, Saha D. Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser Journal of Crystal Growth. 301: 602-606. DOI: 10.1016/J.Jcrysgro.2006.11.164  0.841
2006 Saha D, Holub M, Bhattacharya P, Liao YC. Epitaxially grown MnAs/GaAs lateral spin valves Applied Physics Letters. 89: 142504. DOI: 10.1063/1.2358944  0.839
2006 Bhattacharya P, Holub M, Saha D. Spin‐polarized surface‐emitting lasers Physica Status Solidi (C). 3: 4396-4400. DOI: 10.1002/Pssc.200672883  0.824
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