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Swaroop Ganguly, Ph.D. - Publications

Affiliations: 
2005 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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43 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Rawat A, Surana VK, Ganguly S, Saha D. Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs Solid-State Electronics. 164: 107702. DOI: 10.1016/J.Sse.2019.107702  0.343
2020 Meer M, Rawat A, Takhar K, Ganguly S, Saha D. Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN Microelectronic Engineering. 219: 111144. DOI: 10.1016/J.Mee.2019.111144  0.323
2019 Pendem V, Udai A, Aggarwal T, Ganguly S, Saha D. Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core-shell nanostructures. Nanotechnology. PMID 30893662 DOI: 10.1088/1361-6528/Ab1154  0.323
2019 Chouksey S, Sreenadh S, Ganguly S, Saha D. Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion. Nanotechnology. PMID 30665207 DOI: 10.1088/1361-6528/Ab0035  0.324
2019 Rawat A, Surana VK, Meer M, Bhardwaj N, Ganguly S, Saha D. Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO 2 as a Dielectric Ieee Transactions On Electron Devices. 66: 2557-2562. DOI: 10.1109/Ted.2019.2910608  0.372
2019 Sarkar R, Bhunia S, Nag D, Barik BC, Gupta KD, Saha D, Ganguly S, Laha A, Lemettinen J, Kauppinen C, Kim I, Suihkonen S, Gribisch P, Osten H. Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Applied Physics Letters. 115: 63502. DOI: 10.1063/1.5109861  0.343
2019 Ghosh J, Das S, Mukherjee S, Ganguly S, Laha A. A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures Microelectronic Engineering. 216: 111097. DOI: 10.1016/J.Mee.2019.111097  0.331
2019 Takhar K, Upadhyay BB, Yadav YK, Ganguly S, Saha D. Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs Applied Surface Science. 481: 219-225. DOI: 10.1016/J.Apsusc.2019.03.065  0.316
2018 Saha PK, Pendem V, Chouksey S, Aggarwal T, Udai A, Ganguly S, Saha D. Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment. Nanotechnology. PMID 30557860 DOI: 10.1088/1361-6528/Aaf8De  0.329
2018 Sankaranarayanan S, Chouksey S, Saha P, Pendem V, Udai A, Aggarwal T, Ganguly S, Saha D. Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak. Scientific Reports. 8: 8404. PMID 29849038 DOI: 10.1038/S41598-018-26725-6  0.332
2018 Patil A, Saha D, Ganguly S. A Quantum Biomimetic Electronic Nose Sensor. Scientific Reports. 8: 128. PMID 29317716 DOI: 10.1038/S41598-017-18346-2  0.315
2018 Rawat A, Meer M, Surana Vk, Bhardwaj N, Pendem V, Garigapati NS, Yadav Y, Ganguly S, Saha D. Thermally Grown TiO 2 and Al 2 O 3 for GaN-Based MOS-HEMTs Ieee Transactions On Electron Devices. 65: 3725-3731. DOI: 10.1109/Ted.2018.2857468  0.325
2018 Jha J, Upadhyay BB, Takhar K, Bhardwaj N, Ganguly S, Saha D. Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors Journal of Applied Physics. 124: 165704. DOI: 10.1063/1.5044590  0.332
2018 Kothari S, Vaidya D, Nejad H, Variam N, Ganguly S, Lodha S. Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium Applied Physics Letters. 112: 203503. DOI: 10.1063/1.5028045  0.364
2018 Upadhyay BB, Jha J, Takhar K, Ganguly S, Saha D. Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures Journal of Applied Physics. 123: 205702. DOI: 10.1063/1.5026167  0.332
2017 Chouksey S, Sankaranarayanan S, Pendem V, Saha PK, Ganguly S, Saha D. Strong size dependency on the carrier and photon dynamics in InGaN/GaN single nanowalls determined using photoluminescence and ultrafast transient absorption spectroscopy. Nano Letters. PMID 28735539 DOI: 10.1021/Acs.Nanolett.7B00970  0.326
2017 Saha PK, Chouksey S, Ganguly S, Saha D. Temperature-independent optical transition with sub-nanometer linewidth in thermally diffused Gadolinium in GaN. Optics Letters. 42: 2161-2164. PMID 28569871 DOI: 10.1364/Ol.42.002161  0.317
2017 Meer M, Majety S, Takhar K, Ganguly S, Saha D. Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs Semiconductor Science and Technology. 32: 6. DOI: 10.1088/1361-6641/Aa60A3  0.321
2017 Vaidya D, Lodha S, Ganguly S. Ab-initio study of NiGe/Ge Schottky contact Journal of Applied Physics. 121: 145701. DOI: 10.1063/1.4980126  0.316
2017 Upadhyay BB, Takhar K, Jha J, Ganguly S, Saha D. Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs Solid-State Electronics. 141: 1-6. DOI: 10.1016/J.Sse.2017.11.001  0.343
2017 Takhar K, Meer M, Upadhyay BB, Ganguly S, Saha D. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors Solid-State Electronics. 131: 39-44. DOI: 10.1016/J.Sse.2017.02.002  0.318
2017 Kumar AS, Khachariya D, Meer M, Ganguly S, Saha D. Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires Physica Status Solidi (a). 214: 1600620. DOI: 10.1002/Pssa.201600620  0.338
2016 Banerjee D, Sankaranarayanan S, Khachariya D, Nadar MB, Ganguly S, Saha D. Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires Applied Physics Letters. 109. DOI: 10.1063/1.4959562  0.326
2016 Takhar K, Akhil Kumar S, Meer M, Upadhyay BB, Upadhyay P, Khachariya D, Ganguly S, Saha D. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts Solid-State Electronics. 122: 70-74. DOI: 10.1016/J.Sse.2016.04.005  0.312
2015 Takhar K, Meer M, Khachariya D, Ganguly S, Saha D. Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4928413  0.336
2015 Chaturvedi P, Chouksey S, Banerjee D, Ganguly S, Saha D. Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure Applied Physics Letters. 107. DOI: 10.1063/1.4935554  0.325
2015 Banerjee D, Takhar K, Sankaranarayanan S, Upadhyay P, Ruia R, Chouksey S, Khachariya D, Ganguly S, Saha D. Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser Applied Physics Letters. 107. DOI: 10.1063/1.4930825  0.301
2015 Upadhyay P, Meer M, Takhar K, Khachariya D, Akhil Kumar S, Banerjee D, Ganguly S, Laha A, Saha D. Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation Physica Status Solidi (B) Basic Research. 252: 989-995. DOI: 10.1002/Pssb.201451586  0.361
2014 Sankaranarayanan S, Ganguly S, Saha D. Polarization modulation in GaN-based double-barrier resonant tunneling diodes Applied Physics Express. 7. DOI: 10.7567/Apex.7.095201  0.358
2014 Adari R, Banerjee D, Ganguly S, Saha D. Fermi-level depinning at metal/GaN interface by an insulating barrier Thin Solid Films. 550: 564-568. DOI: 10.1016/J.Tsf.2013.11.041  0.308
2013 Adari R, Banerjee D, Ganguly S, Saha D. Memory Elements Using Multiterminal Magnetoresistive Devices Applied Physics Express. 6: 43002. DOI: 10.7567/Apex.6.043002  0.314
2012 Rawal Y, Ganguly S, Baghini MS. Fabrication and Characterization of New Ti--Al and Ti-–Pt Tunnel Diodes Active and Passive Electronic Components. 2012: 1-6. DOI: 10.1155/2012/694105  0.304
2011 Adari R, Sarkar B, Patil T, Banerjee D, Suggisetti P, Ganguly S, Saha D. Temperature Dependent Characteristics of Fe/n-GaN Schottky Diodes The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.P-6-5  0.362
2011 Gundapaneni S, Ganguly S, Kottantharayil A. Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High- $\kappa$ Spacers Ieee Electron Device Letters. 32: 1325-1327. DOI: 10.1109/Led.2011.2162309  0.326
2011 Gundapaneni S, Ganguly S, Kottantharayil A. Bulk Planar Junctionless Transistor (BPJLT): An Attractive Device Alternative for Scaling Ieee Electron Device Letters. 32: 261-263. DOI: 10.1109/Led.2010.2099204  0.328
2011 Ferrer DA, Guchhait S, Liu H, Ferdousi F, Corbet C, Xu H, Doczy M, Bourianoff G, Mathew L, Rao R, Saha S, Ramon M, Ganguly S, Markert JT, Banerjee SK. Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets Journal of Applied Physics. 110. DOI: 10.1063/1.3608109  0.7
2006 Ganguly S, Register LF, MacDonald AH, Banerjee SK. Two-level voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode Ieee Transactions On Nanotechnology. 5: 30-36. DOI: 10.1109/Tnano.2005.861406  0.485
2006 Ganguly S, MacDonald AH, Register LF, Banerjee SK. Scattering dependence of bias-controlled magnetization switching in ferromagnetic resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.153314  0.479
2006 Ganguly S, MacDonald AH, Register LF, Banerjee S. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.033310  0.49
2005 Ganguly S, Register LF, Banerjee S, MacDonald AH. Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.245306  0.487
2002 Ganguly S, Lin L, Kohli P, Li H, Kirichenko T, Srinivasa R, Agarwal V, Banerjee S. Comparison of low energy BF2+, BCl2+, and BBr2+ implants for the fabrication of ultrashallow P+-N junctions Journal of Applied Physics. 91: 2023-2027. DOI: 10.1063/1.1433926  0.704
2002 Kohli P, Ganguly S, Kirichenko T, Li H-, Banerjee S, Graetz E, Shevelev M. Microwave annealing for ultra-shallow junction formation Journal of Electronic Materials. 31: 214-219. DOI: 10.1007/S11664-002-0209-1  0.721
2000 Li H, Kohli P, Ganguly S, Kirichenko TA, Banerjee S, Zeitzoff P. Boron diffusion in silicon in the presence of other species Applied Physics Letters. 77: 2683-2685. DOI: 10.1063/1.1320019  0.705
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