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Donghun Choi, Ph.D. - Publications

Affiliations: 
2008 Stanford University, Palo Alto, CA 
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Choi D, Harris JS, Kim E, McIntyre PC, Cagnon J, Stemmer S. High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication Journal of Crystal Growth. 311: 1962-1971. DOI: 10.1016/J.Jcrysgro.2008.09.138  0.629
2008 Shin B, Choi D, Harris JS, McIntyre PC. Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators Applied Physics Letters. 93: 052911. DOI: 10.1063/1.2966357  0.559
2008 Choi D, Kim E, McIntyre PC, Harris JS. Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication Applied Physics Letters. 92: 203502. DOI: 10.1063/1.2929386  0.632
2008 Choi D, Ge Y, Harris JS, Cagnon J, Stemmer S. Low surface roughness and threading dislocation density Ge growth on Si (0 0 1) Journal of Crystal Growth. 310: 4273-4279. DOI: 10.1016/J.Jcrysgro.2008.07.029  0.552
2007 Choi D, Warusawithana M, Chui CO, Chen J, Tsai W, Schlom DG, Harris JS. The electrical characterization of molecular-beam-deposited LaA10 3 on gaas and its annealing effects Materials Research Society Symposium Proceedings. 996: 127-132. DOI: 10.1557/Proc-0996-H05-31  0.602
2007 Choi D, Harris JS, Warusawithana M, Schlom DG. Annealing condition optimization and electrical characterization of amorphous LaAl O3 GaAs metal-oxide-semiconductor capacitors Applied Physics Letters. 90. DOI: 10.1063/1.2748308  0.597
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