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Neerav Kharche, Ph.D. - Publications

Affiliations: 
2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology, Condensed Matter Physics
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48 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Sánchez-Sánchez C, Sánchez-Sánchez C, Dienel T, Nicolaï A, Kharche N, Liang L, Daniels C, Meunier V, Liu J, Feng X, Müllen K, Sánchez-Valencia JR, Gröning O, Ruffieux P, Fasel R. On-surface Synthesis and Characterization of Acene-based Nanoribbons Incorporating Four-membered Rings. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 31190412 DOI: 10.1002/Chem.201901410  0.354
2018 Deniz O, Sánchez-Sánchez C, Jaafar R, Kharche N, Liang L, Meunier V, Feng X, Müllen K, Fasel R, Ruffieux P. Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111). Chemical Communications (Cambridge, England). PMID 29372206 DOI: 10.1039/C7Cc08353J  0.413
2018 Yoshimura A, Lamparski M, Kharche N, Meunier V. First-principles simulation of local response in transition metal dichalcogenides under electron irradiation. Nanoscale. PMID 29334100 DOI: 10.1039/C7Nr07024A  0.346
2017 Cupo A, Masih Das P, Chien CC, Danda G, Kharche N, Tristant D, Drndic M, Meunier V. Periodic Arrays of Phosphorene Nanopores as Antidot Lattices with Tunable Properties. Acs Nano. PMID 28666086 DOI: 10.1021/Acsnano.7B04031  0.482
2017 Wang S, Kharche N, Costa Girão E, Feng X, Müllen K, Meunier V, Fasel R, Ruffieux P. Quantum Dots in Graphene Nanoribbons. Nano Letters. PMID 28603996 DOI: 10.1021/Acs.Nanolett.7B01244  0.432
2017 Kharche N, Muckerman JT, Hybertsen MS. Erratum: First-Principles Approach to Calculating Energy Level Alignment at Aqueous Semiconductor Interfaces [Phys. Rev. Lett. 113, 176802 (2014)]. Physical Review Letters. 118: 219902. PMID 28598652 DOI: 10.1103/Physrevlett.118.219902  0.305
2017 Deniz O, Sanchez Sanchez C, Dumslaff T, Feng X, Narita A, Müllen K, Kharche N, Meunier V, Fasel R, Ruffieux P. Revealing the Electronic Structure of Silicon Intercalated Armchair Graphene Nanoribbons by Scanning Tunneling Spectroscopy. Nano Letters. PMID 28301723 DOI: 10.1021/Acs.Nanolett.6B04727  0.415
2017 Massote DVP, Liang L, Kharche N, Meunier V. Erratum: Electronic, vibrational, Raman, and scanning tunneling microscopy signatures of two-dimensional boron nanomaterials [Phys. Rev. B 94 , 195416 (2016)] Physical Review B. 95. DOI: 10.1103/Physrevb.95.159907  0.311
2017 Nishat MRK, Alqahtani SM, Chimalgi VU, Kharche N, Ahmed SS. Atomistic modeling of nonpolar m-plane InGaN disk-in-wire light emitters Journal of Computational Electronics. 16: 814-824. DOI: 10.1007/S10825-017-1024-5  0.358
2016 Di Giovannantonio M, Tomellini M, Lipton-Duffin J, Galeotti G, Ebrahimi M, Cossaro A, Verdini A, Kharche N, Meunier V, Vasseur G, Fagot-Revurat Y, Perepichka DF, Rosei F, Contini G. Mechanistic Picture and Kinetic Analysis of Surface-Confined Ullmann Polymerization. Journal of the American Chemical Society. PMID 27958750 DOI: 10.1021/Jacs.6B09728  0.357
2016 Masih Das P, Danda G, Cupo A, Parkin WM, Liang L, Kharche N, Ling X, Huang S, Dresselhaus MS, Meunier V, Drndic M. Controlled Sculpture of Black Phosphorus Nanoribbons. Acs Nano. PMID 27192448 DOI: 10.1021/Acsnano.6B02435  0.381
2016 Kharche N, Meunier V. Width and Crystal Orientation Dependent Band Gap Renormalization in Substrate-Supported Graphene Nanoribbons. The Journal of Physical Chemistry Letters. 1526-1533. PMID 27063190 DOI: 10.1021/Acs.Jpclett.6B00422  0.41
2016 Massote DVP, Liang L, Kharche N, Meunier V. Electronic, vibrational, Raman, and scanning tunneling microscopy signatures of two-dimensional boron nanomaterials Physical Review B. 94. DOI: 10.1103/Physrevb.94.195416  0.382
2016 Simbeck AJ, Lanzillo NA, Kharche N, Nayak SK. Substrate polarization effect on the band gaps of one-dimensional semiconducting atomic wires Computational Materials Science. 123: 14-18. DOI: 10.1016/J.Commatsci.2016.06.014  0.438
2015 Ozturk B, de-Luna-Bugallo A, Panaitescu E, Chiaramonti AN, Liu F, Vargas A, Jiang X, Kharche N, Yavuzcetin O, Alnaji M, Ford MJ, Lok J, Zhao Y, King N, Dhar NK, et al. Atomically thin layers of B-N-C-O with tunable composition. Science Advances. 1: e1500094. PMID 26601211 DOI: 10.1126/Sciadv.1500094  0.346
2014 Kharche N, Muckerman JT, Hybertsen MS. First-principles approach to calculating energy level alignment at aqueous semiconductor interfaces. Physical Review Letters. 113: 176802. PMID 25379929 DOI: 10.1103/Physrevlett.113.176802  0.359
2014 Kharche N, Hybertsen MS, Muckerman JT. Computational investigation of structural and electronic properties of aqueous interfaces of GaN, ZnO, and a GaN/ZnO alloy. Physical Chemistry Chemical Physics : Pccp. 16: 12057-66. PMID 24686328 DOI: 10.1039/C4Cp00486H  0.329
2014 Lanzillo NA, Kharche N, Nayak SK. Substrate-induced band gap renormalization in semiconducting carbon nanotubes. Scientific Reports. 4: 3609. PMID 24402238 DOI: 10.1038/Srep03609  0.343
2014 Chimalgi V, Kharche N, Ahmed S. Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots Journal of Computational Electronics. 13: 1026-1032. DOI: 10.1007/S10825-014-0626-4  0.441
2013 Park SH, Kharche N, Basu D, Jiang Z, Nayak SK, Weber CE, Hegde G, Haume K, Kubis T, Povolotskyi M, Klimeck G. Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2013.6633825  0.403
2013 Simbeck AJ, Gu D, Kharche N, Satyam PV, Avouris P, Nayak SK. Electronic structure of oxygen-functionalized armchair graphene nanoribbons Physical Review B. 88. DOI: 10.1103/Physrevb.88.035413  0.365
2013 Jiang X, Kharche N, Kohl P, Boykin TB, Klimeck G, Luisier M, Ajayan PM, Nayak SK. Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces Applied Physics Letters. 103: 133107. DOI: 10.1063/1.4822427  0.549
2013 Luisier M, Boykin TB, Ye Z, Martini A, Klimeck G, Kharche N, Jiang X, Nayak S. Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons Applied Physics Letters. 102: 253506. DOI: 10.1063/1.4811761  0.546
2013 Kharche N, Boykin TB, Nayak SK. Multiscale modeling of screening effects on conductivity of graphene in weakly bonded graphene-dielectric heterostructures Journal of Computational Electronics. 12: 722-729. DOI: 10.1007/S10825-013-0524-1  0.356
2012 Simbeck AJ, Lanzillo N, Kharche N, Verstraete MJ, Nayak SK. Aluminum conducts better than copper at the atomic scale: a first-principles study of metallic atomic wires. Acs Nano. 6: 10449-55. PMID 23083218 DOI: 10.1021/Nn303950B  0.334
2012 Park SH, Liu Y, Kharche N, Salmani Jelodar M, Klimeck G, Lundstrom MS, Luisier M. Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm) Ieee Transactions On Electron Devices. 59: 2107-2114. DOI: 10.1109/Ted.2012.2198481  0.561
2012 Jiang Z, Kharche N, Boykin T, Klimeck G. Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells Applied Physics Letters. 100: 103502. DOI: 10.1063/1.3692174  0.581
2011 Kharche N, Nayak SK. Quasiparticle band gap engineering of graphene and graphone on hexagonal boron nitride substrate. Nano Letters. 11: 5274-8. PMID 22026533 DOI: 10.1021/Nl202725W  0.364
2011 Kharche N, Zhou Y, O'Brien KP, Kar S, Nayak SK. Effect of layer stacking on the electronic structure of graphene nanoribbons. Acs Nano. 5: 6096-101. PMID 21766785 DOI: 10.1021/Nn200941U  0.357
2011 Kharche N, Manjari SR, Zhou Y, Geer RE, Nayak SK. A comparative study of quantum transport properties of silver and copper nanowires using first principles calculations. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 085501. PMID 21411899 DOI: 10.1088/0953-8984/23/8/085501  0.397
2011 Kharche N, Klimeck G, Kim D, del Alamo JA, Luisier M. Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs Ieee Transactions On Electron Devices. 58: 1963-1971. DOI: 10.1109/Ted.2011.2144986  0.564
2011 Rahman R, Verduijn J, Kharche N, Lansbergen GP, Klimeck G, Hollenberg LCL, Rogge S. Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)] Physical Review B. 83. DOI: 10.1103/Physrevb.83.239904  0.669
2011 Rahman R, Verduijn J, Kharche N, Lansbergen GP, Klimeck G, Hollenberg LCL, Rogge S. Engineered valley-orbit splittings in quantum-confined nanostructures in silicon Physical Review B. 83. DOI: 10.1103/Physrevb.83.195323  0.715
2011 Boykin TB, Luisier M, Klimeck G, Jiang X, Kharche N, Zhou Y, Nayak SK. Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons Journal of Applied Physics. 109: 104304. DOI: 10.1063/1.3582136  0.548
2009 Kharche N, Kim S, Boykin TB, Klimeck G. Valley degeneracies in (111) silicon quantum wells Applied Physics Letters. 94: 042101. DOI: 10.1063/1.3068499  0.568
2009 Boykin TB, Kharche N, Klimeck G. Non-primitive rectangular cells for tight-binding electronic structure calculations Physica E: Low-Dimensional Systems and Nanostructures. 41: 490-494. DOI: 10.1016/J.Physe.2008.09.022  0.542
2008 Luisier M, Neophytou N, Kharche N, Klimeck G. Full-band and atomistic simulation of realistic 40 nm InAs HEMT Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796842  0.519
2008 Boykin TB, Kharche N, Klimeck G. Valley splitting in finite barrier quantum wells Physical Review B. 77. DOI: 10.1103/Physrevb.77.245320  0.589
2008 Kharche N, Luisier M, Boykin TB, Klimeck G. Electronic structure and transmission characteristics of SiGe nanowires Journal of Computational Electronics. 7: 350-354. DOI: 10.1007/S10825-008-0191-9  0.571
2007 Liang G, Xiang J, Kharche N, Klimeck G, Lieber CM, Lundstrom M. Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters. 7: 642-6. PMID 17326690 DOI: 10.1021/Nl062596F  0.56
2007 Prada M, Kharche N, Klimeck G. Electronic Structure of Si/InAs Composite Channels Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G02-03  0.612
2007 Boykin TB, Luisier M, Schenk A, Kharche N, Klimeck G. The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires Ieee Transactions On Nanotechnology. 6: 43-47. DOI: 10.1109/Tnano.2006.886776  0.556
2007 Klimeck G, Ahmed S, Kharche N, Korkusinski M, Usman M, Prada M, Boykin T. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications Ieee Transactions On Electron Devices. 54: 2090-2099. DOI: 10.1109/Ted.2007.904877  0.64
2007 Boykin TB, Kharche N, Klimeck G. Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization Physical Review B. 76. DOI: 10.1103/Physrevb.76.035310  0.564
2007 Boykin TB, Kharche N, Klimeck G, Korkusinski M. Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations Journal of Physics: Condensed Matter. 19: 036203. DOI: 10.1088/0953-8984/19/3/036203  0.556
2007 Boykin TB, Kharche N, Klimeck G. Evolution time and energy uncertainty European Journal of Physics. 28: 673-678. DOI: 10.1088/0143-0807/28/4/007  0.48
2007 Kharche N, Prada M, Boykin TB, Klimeck G. Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder Applied Physics Letters. 90: 092109. DOI: 10.1063/1.2591432  0.568
2005 Boykin TB, Kharche N, Klimeck G. Allowed wavevectors under the application of incommensurate periodic boundary conditions European Journal of Physics. 27: 5-10. DOI: 10.1088/0143-0807/27/1/002  0.482
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