| Year |
Citation |
Score |
| 2023 |
Kim K, Choi S, Bong H, Lee H, Kim M, Oh J. Catalytic nickel silicide as an alternative to noble metals in metal-assisted chemical etching of silicon. Nanoscale. PMID 37555310 DOI: 10.1039/d3nr02053c |
0.301 |
|
| 2020 |
Ki B, Choi K, Kim K, Oh J. Electrochemical local etching of silicon in etchant vapor. Nanoscale. PMID 32141459 DOI: 10.1039/c9nr10420h |
0.34 |
|
| 2019 |
Lee C, Yoo YS, Ki B, Jang MH, Lim SH, Song HG, Cho JH, Oh J, Cho YH. Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing. Scientific Reports. 9: 11709. PMID 31406149 DOI: 10.1038/s41598-019-48032-4 |
0.316 |
|
| 2017 |
Min Lee S, Hwan Yum J, Larsen ES, Chul Lee W, Keun Kim S, Bielawski CW, Oh J. Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. Scientific Reports. 7: 13205. PMID 29038543 DOI: 10.1038/s41598-017-13693-6 |
0.302 |
|
| 2016 |
Ki B, Kim KH, Kim H, Lee C, Cho YH, Oh J. Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates. J Nanosci Nanotechnol. 16: 5239-42. PMID 27483906 |
0.342 |
|
| 2014 |
Oh J. Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks Current Applied Physics. 14. DOI: 10.1016/j.cap.2013.11.039 |
0.391 |
|
| 2013 |
Park MS, Kim Y, Lee KT, Kang CY, Min BG, Oh J, Majhi P, Tseng HH, Lee JC, Banerjee SK, Lee JS, Jammy R, Jeong YH. Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs Microelectronic Engineering. 112: 80-83. DOI: 10.1016/J.Mee.2013.04.041 |
0.425 |
|
| 2012 |
Kang M, Shin H, Yoo J, Lee G, Oh J, Majhi P, Jammy R, Lee H. Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs Ieee Transactions On Nanotechnology. 11: 769-776. DOI: 10.1109/Tnano.2012.2195197 |
0.372 |
|
| 2012 |
Byun Y, Mahata C, An C, Oh J, Choi R, Kim H. Interfacial and electrical properties of HfO2gate dielectrics grown on GaAs by atomic layer deposition using different oxidants Journal of Physics D: Applied Physics. 45: 435305. DOI: 10.1088/0022-3727/45/43/435305 |
0.351 |
|
| 2011 |
Lee SH, Nainani A, Oh J, Jeon K, Kirsch PD, Majhi P, Register LF, Banerjee SK, Jammy R. On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si0.5Ge0.5 quantum-well pMOSFET along 〈 110 〉 and 〈 100 〉 channel directions Ieee Transactions On Electron Devices. 58: 985-995. DOI: 10.1109/Ted.2011.2105876 |
0.32 |
|
| 2011 |
Oh J, Huang J, Chen YT, Ok I, Jeon K, Lee SH, Sassman B, Loh WY, Lee HD, Ko DH, Majhi P, Kirsch P, Jammy R. Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors Thin Solid Films. 520: 442-444. DOI: 10.1016/J.Tsf.2011.06.025 |
0.385 |
|
| 2011 |
Loh WY, Jeon K, Kang CY, Oh J, King Liu TJ, Tseng HH, Xiong W, Majhi P, Jammy R, Hu C. Highly scaled (Lg ∼ 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μa/μm Solid-State Electronics. 65: 22-27. DOI: 10.1016/J.Sse.2011.06.019 |
0.424 |
|
| 2011 |
Choi W, Oh J, Yoo O, Han I, Na M, Kwon H, Park B, Majhi P, Tseng HH, Jammy R, Lee H. Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor Microelectronic Engineering. 88: 3424-3427. DOI: 10.1016/J.Mee.2009.11.019 |
0.455 |
|
| 2010 |
Zhang Y, Jung S, Oh J, Shin H, Oh S, Wang J, Majhi P, Jammy R, Lee H. Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide Japanese Journal of Applied Physics. 49: 55701. DOI: 10.1143/Jjap.49.055701 |
0.33 |
|
| 2010 |
Zhang Y, Oh J, Li S, Jung S, Park K, Lee G, Majhi P, Tseng H, Jammy R, Lee H. Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs Ieee Transactions On Nanotechnology. 9: 258-263. DOI: 10.1109/Tnano.2009.2025129 |
0.371 |
|
| 2010 |
Choi W, Kang C, Oh J, Lee B, Majhi P, Kwon H, Jammy R, Lee G, Lee H. Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High- $k$ /Metal Gate Stacks Ieee Electron Device Letters. 31: 1211-1213. DOI: 10.1109/Led.2010.2071851 |
0.421 |
|
| 2010 |
Park MS, Lee KT, Kang CY, Choi G, Sagong HC, Sohn CW, Min B, Oh J, Majhi P, Tseng H, Lee JC, Lee J, Jammy R, Jeong Y. The Effect of a Si Capping Layer on RF Characteristics of High-$k$/Metal Gate SiGe Channel pMOSFETs Ieee Electron Device Letters. 31: 1104-1106. DOI: 10.1109/Led.2010.2061212 |
0.472 |
|
| 2010 |
Oh J, Campbell JC. Thermal desorption of Ge native oxides and loss of Ge from the surface Materials Science in Semiconductor Processing. 13: 185-188. DOI: 10.1016/J.Mssp.2010.10.009 |
0.483 |
|
| 2009 |
Loh W, Etienne H, Coss B, Ok I, Turnbaugh D, Spiegel Y, Torregrosa F, Banti J, Roux L, Hung P, Oh J, Sassman B, Radar K, Majhi P, Tseng H, et al. Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation Ieee Electron Device Letters. 30: 1140-1142. DOI: 10.1109/Led.2009.2031828 |
0.408 |
|
| 2009 |
Huang J, Kirsch PD, Oh J, Lee SH, Majhi P, Harris HR, Gilmer DC, Bersuker G, Heh D, Park CS, Park C, Tseng HH, Jammy R. Mechanisms limiting EOT scaling and gate leakage currents of high-k/ Metal gate stacks directly on SiGe Ieee Electron Device Letters. 30: 285-287. DOI: 10.1109/Led.2008.2011754 |
0.478 |
|
| 2009 |
Yoo OS, Oh J, Min KS, Kang CY, Lee BH, Lee KT, Na MK, Kwon H, Majhi P, Tseng H, Jammy R, Wang JS, Lee H. Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs Microelectronic Engineering. 86: 259-262. DOI: 10.1016/J.Mee.2008.04.024 |
0.493 |
|
| 2008 |
Zhang YY, Oh J, Bae TS, Zhong Z, Li SG, Jung SY, Park KY, Lee GW, Wang JS, Majhi P, Lee BH, Tseng HH, Jeong YH, Lee HD. Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs Electrochemical and Solid State Letters. 11. DOI: 10.1149/1.2795836 |
0.438 |
|
| 2008 |
Oh J, Majhi P, Lee HD, Banerjee SK, Harris R, Tseng HH, Jammy R. Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors Japanese Journal of Applied Physics. 47: 2656-2659. DOI: 10.1143/Jjap.47.2656 |
0.484 |
|
| 2008 |
Lee SH, Majhi P, Oh J, Sassman B, Young C, Bowonder A, Loh WY, Choi KJ, Cho BJ, Lee HD, Kirsch P, Harris HR, Tsai W, Datta S, Tseng HH, et al. Demonstration of Lg ∼ nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high Ion/Ioff (>5 × 104, and controlled short channel effects (SCEs) Ieee Electron Device Letters. 29: 1017-1020. DOI: 10.1109/Led.2008.2002073 |
0.456 |
|
| 2008 |
Kim HS, Ok I, Zhang M, Zhu F, Park S, Yum J, Zhao H, Lee JC, Oh J, Majhi P. Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer Applied Physics Letters. 92: 102904. DOI: 10.1063/1.2844883 |
0.45 |
|
| 2008 |
Kim HS, Ok I, Zhang M, Zhu F, Park S, Yum J, Zhao H, Lee JC, Oh J, Majhi P. Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer Applied Physics Letters. 92: 32907. DOI: 10.1063/1.2838294 |
0.45 |
|
| 2008 |
Oh J, Majhi P, Tseng H, Jammy R, Kelly DQ, Banerjee SK, Campbell JC. Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation Thin Solid Films. 516: 4107-4110. DOI: 10.1016/J.Tsf.2007.10.012 |
0.576 |
|
| 2008 |
Yoo OS, Oh J, Kang CY, Lee BH, Han IS, Choi WH, Kwon HM, Na MK, Majhi P, Tseng HH, Jammy R, Wang JS, Lee HD. Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate Materials Science and Engineering B-Advanced Functional Solid-State Materials. 154: 102-105. DOI: 10.1016/J.Mseb.2008.06.031 |
0.467 |
|
| 2008 |
Oh J, Majhi P, Jammy R, Joe R, Sugawara T, Akasaka Y, Kaitsuka T, Arikado T, Tomoyasu M. Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices Microelectronic Engineering. 85: 1804-1806. DOI: 10.1016/J.Mee.2008.05.013 |
0.477 |
|
| 2007 |
Oh J, Majhi P, Lee H, Yoo O, Banerjee S, Kang CY, Yang J, Harris R, Tseng H, Jammy R. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates Ieee Electron Device Letters. 28: 1044-1046. DOI: 10.1109/Led.2007.908502 |
0.468 |
|
| 2007 |
Huang Z, Oh J, Banerjee SK, Campbell JC. Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors Ieee Journal of Quantum Electronics. 43: 238-242. DOI: 10.1109/Jqe.2006.890395 |
0.554 |
|
| 2006 |
Lee BH, Oh J, Tseng HH, Jammy R, Huff H. Gate stack technology for nanoscale devices Materials Today. 9: 32-40. DOI: 10.1016/S1369-7021(06)71541-3 |
0.33 |
|
| 2004 |
Oh J, Banerjee SK, Campbell JC. Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers Ieee Photonics Technology Letters. 16: 581-583. DOI: 10.1109/Lpt.2003.822258 |
0.587 |
|
| 2004 |
Huang Z, Oh J, Campbell JC. Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers Applied Physics Letters. 85: 3286-3288. DOI: 10.1063/1.1805706 |
0.568 |
|
| 2004 |
Oh J, Campbell JC. Thermal desorption of Ge native oxides and the loss of Ge from the surface Journal of Electronic Materials. 33: 364-367. DOI: 10.1007/S11664-004-0144-4 |
0.494 |
|
| 2002 |
Oh J, Csutak S, Campbell C. High-speed interdigitated Ge PIN photodetectors Ieee Photonics Technology Letters. 14: 369-371. DOI: 10.1109/68.986816 |
0.611 |
|
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