Year |
Citation |
Score |
2022 |
Su X, Huang T, Zheng B, Wang J, Wang X, Yan S, Wang X, Shi Y. Atomic-Scale Confinement and Negative Refraction of Plasmons by Twisted Bilayer Graphene. Nano Letters. 22: 8975-8982. PMID 36374517 DOI: 10.1021/acs.nanolett.2c03220 |
0.303 |
|
2020 |
Li L, Shao L, Liu X, Gao A, Wang H, Zheng B, Hou G, Shehzad K, Yu L, Miao F, Shi Y, Xu Y, Wang X. Room-temperature valleytronic transistor. Nature Nanotechnology. PMID 32690885 DOI: 10.1038/S41565-020-0727-0 |
0.362 |
|
2020 |
Li Y, Liu J, Su X, Ou Q, Wan Z, Wu Y, Yu W, Bao X, Huang Y, Wang X, Tadich A, Shabbir B, Bao Q. High performance broadband photo and soft X-ray detectors based on two dimensional CrSiTe3 Journal of Materials Chemistry C. 8: 6659-6666. DOI: 10.1039/D0Tc01354D |
0.319 |
|
2020 |
Zeng W, Fu X, Yu L, Shi T, Liu P, Xu J, Chen J, Qiulan C, Wang X, Xie W. Growth dynamics and photoresponse of the Wadsley phase V6O13 crystals Journal of Materials Chemistry C. 8: 6470-6477. DOI: 10.1039/C9Tc06761B |
0.303 |
|
2019 |
Gao A, Zhang Z, Li L, Zheng B, Wang C, Wang Y, Cao T, Wang Y, Liang SJ, Miao F, Shi Y, Wang X. Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures. Acs Nano. PMID 31877250 DOI: 10.1021/Acsnano.9B06140 |
0.429 |
|
2019 |
Hao S, Yan S, Wang Y, Xu T, Zhang H, Cong X, Li L, Liu X, Cao T, Gao A, Zhang L, Jia L, Long M, Hu W, Wang X, et al. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors. Small (Weinheim An Der Bergstrasse, Germany). e1905902. PMID 31867892 DOI: 10.1002/Smll.201905902 |
0.334 |
|
2019 |
Liu W, Li L, Guo H, Qadir A, Bodepudi SC, Shehzad K, Chen W, Xie YH, Wang X, Yu B, Xu Y. Approaching the Collection Limit in Hot Electron Transistor with Ambipolar Hot Carrier Transport. Acs Nano. PMID 31755701 DOI: 10.1021/Acsnano.9B07020 |
0.414 |
|
2019 |
Liu K, Wang W, Yu Y, Hou X, Liu Y, Chen W, Wang X, Lu J, Ni Z. Graphene-based infrared position-sensitive detector for precise measurements and high-speed trajectory tracking. Nano Letters. PMID 31556623 DOI: 10.1021/Acs.Nanolett.9B03368 |
0.4 |
|
2019 |
Hu F, Kim M, Zhang Y, Luan Y, Ho K, Shi Y, Wang C, Wang X, Fei Z. Tailor plasmons in pentacene/graphene heterostructures with interlayer electron transfer. Nano Letters. PMID 31398046 DOI: 10.1021/Acs.Nanolett.9B01945 |
0.499 |
|
2019 |
Chen X, Shehzad K, Gao L, Long M, Guo H, Qin S, Wang X, Wang F, Shi Y, Hu W, Xu Y, Wang X. Graphene Hybrid Structures for Integrated and Flexible Optoelectronics. Advanced Materials (Deerfield Beach, Fla.). e1902039. PMID 31282020 DOI: 10.1002/Adma.201902039 |
0.444 |
|
2019 |
Li L, Liu W, Gao A, Zhao Y, Lu Q, Yu L, Wang J, Yu L, Shao L, Miao F, Shi Y, Xu Y, Wang X. Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure. Nano Letters. PMID 31025869 DOI: 10.1021/Acs.Nanolett.9B00908 |
0.505 |
|
2019 |
He R, Chen Z, Lai H, Zhang T, Wen J, Chen H, Xie F, Yue S, Liu P, Chen J, Xie W, Wang X, Xu J. Van der Waals transition metal oxide for vis-MIR broadband photodetection via intercalation strategy. Acs Applied Materials & Interfaces. PMID 30920195 DOI: 10.1021/Acsami.9B00181 |
0.493 |
|
2019 |
Gao A, Lai J, Wang Y, Zhu Z, Zeng J, Yu G, Wang N, Chen W, Cao T, Hu W, Sun D, Chen X, Miao F, Shi Y, Wang X. Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures. Nature Nanotechnology. PMID 30664752 DOI: 10.1038/S41565-018-0348-Z |
0.382 |
|
2018 |
Yu L, Zhu Z, Gao A, Wang J, Miao F, Shi Y, Wang X. Electrically tunable optical properties of few layers black arsenic phosphorus. Nanotechnology. PMID 30204123 DOI: 10.1088/1361-6528/Aae05F |
0.388 |
|
2018 |
Jiang J, Ling C, Xu T, Wang W, Niu X, Zafar A, Yan Z, Wang X, You Y, Sun L, Lu J, Wang J, Ni Z. Defect Engineering for Modulating the Trap States in 2D Photoconductors. Advanced Materials (Deerfield Beach, Fla.). e1804332. PMID 30168633 DOI: 10.1002/Adma.201804332 |
0.328 |
|
2018 |
Liu Y, Liu C, Wang X, He L, Wan X, Xu Y, Shi Y, Zhang R, Wang F. Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe. Scientific Reports. 8: 12840. PMID 30150760 DOI: 10.1038/S41598-018-29717-8 |
0.481 |
|
2017 |
Chen X, Liu X, Wu B, Nan H, Guo H, Ni Z, Wang F, Wang X, Shi Y, Wang X. Improving the performance of graphene phototransistors using a heterostructure as light-absorbing layer. Nano Letters. PMID 28876943 DOI: 10.1021/Acs.Nanolett.7B03263 |
0.485 |
|
2017 |
Long M, Gao A, Wang P, Xia H, Ott C, Pan C, Fu Y, Liu E, Chen X, Lu W, Nilges T, Xu J, Wang X, Hu W, Miao F. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Science Advances. 3: e1700589. PMID 28695200 DOI: 10.1126/Sciadv.1700589 |
0.472 |
|
2017 |
Deng B, Tran V, Xie Y, Jiang H, Li C, Guo Q, Wang X, Tian H, Koester SJ, Wang H, Cha JJ, Xia Q, Yang L, Xia F. Efficient electrical control of thin-film black phosphorus bandgap. Nature Communications. 8: 14474. PMID 28422160 DOI: 10.1038/Ncomms14474 |
0.379 |
|
2017 |
Fu Y, Long M, Gao A, Wang Y, Pan C, Liu X, Zeng J, Xu K, Zhang L, Liu E, Hu W, Wang X, Miao F. Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping Applied Physics Letters. 111: 43502. DOI: 10.1063/1.4995400 |
0.385 |
|
2017 |
Zhang Y, Guo Y, Song L, Qian J, Jiang S, Wang Q, Wang X, Shi Y, Wang X, Li Y. Directly writing 2D organic semiconducting crystals for high-performance field-effect transistors Journal of Materials Chemistry C. 5: 11246-11251. DOI: 10.1039/C7Tc02348K |
0.326 |
|
2017 |
Xu Y, Ali A, Shehzad K, Meng N, Xu M, Zhang Y, Wang X, Jin C, Wang H, Guo Y, Yang Z, Yu B, Liu Y, He Q, Duan X, ... Wang X, et al. Photodetectors: Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal-Semiconductor-Metal Photodetectors (Adv. Mater. Technol. 2/2017) Advanced Materials Technologies. 2. DOI: 10.1002/Admt.201770009 |
0.377 |
|
2016 |
Wu B, Zhao Y, Nan H, Yang Z, Zhang Y, Zhao H, He D, Jiang Z, Liu X, Li Y, Shi Y, Ni Z, Wang J, Xu JB, Wang X. Precise, self-limited epitaxy of ultrathin organic semiconductors and heterojunctions tailored by van der Waals interactions. Nano Letters. PMID 27183049 DOI: 10.1021/Acs.Nanolett.6B01108 |
0.476 |
|
2016 |
Liu X, Luo X, Nan H, Guo H, Wang P, Zhang L, Zhou M, Yang Z, Shi Y, Hu W, Ni Z, Qiu T, Yu Z, Xu JB, Wang X. Epitaxial Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27146896 DOI: 10.1002/Adma.201600400 |
0.524 |
|
2016 |
Zhang Y, Qiao J, Gao S, Hu F, He D, Wu B, Yang Z, Xu B, Li Y, Shi Y, Ji W, Wang P, Wang X, Xiao M, Xu H, ... ... Wang X, et al. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit. Physical Review Letters. 116: 016602. PMID 26799035 DOI: 10.1103/Physrevlett.116.016602 |
0.469 |
|
2016 |
Wang X, Lan S. Optical properties of black phosphorus Advances in Optics and Photonics. 8: 618. DOI: 10.1364/Aop.8.000618 |
0.379 |
|
2016 |
Xu Y, Ali A, Shehzad K, Meng N, Xu M, Zhang Y, Wang X, Jin C, Wang H, Guo Y, Yang Z, Yu B, Liu Y, He Q, Duan X, ... Wang X, et al. Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal-Semiconductor-Metal Photodetectors Advanced Materials Technologies. 2: 1600241. DOI: 10.1002/Admt.201600241 |
0.481 |
|
2015 |
Liu Y, Wang F, Wang X, Wang X, Flahaut E, Liu X, Li Y, Wang X, Xu Y, Shi Y, Zhang R. Planar carbon nanotube-graphene hybrid films for high-performance broadband photodetectors. Nature Communications. 6: 8589. PMID 26446884 DOI: 10.1038/Ncomms9589 |
0.462 |
|
2015 |
Wang X, Tian H, Mohammad MA, Li C, Wu C, Yang Y, Ren TL. A spectrally tunable all-graphene-based flexible field-effect light-emitting device. Nature Communications. 6: 7767. PMID 26178323 DOI: 10.1038/Ncomms8767 |
0.482 |
|
2015 |
Liu B, Köpf M, Abbas AN, Wang X, Guo Q, Jia Y, Xia F, Weihrich R, Bachhuber F, Pielnhofer F, Wang H, Dhall R, Cronin SB, Ge M, Fang X, et al. Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties. Advanced Materials (Deerfield Beach, Fla.). PMID 26112061 DOI: 10.1002/Adma.201501758 |
0.351 |
|
2015 |
Wang X, Jones AM, Seyler KL, Tran V, Jia Y, Zhao H, Wang H, Yang L, Xu X, Xia F. Highly anisotropic and robust excitons in monolayer black phosphorus. Nature Nanotechnology. 10: 517-21. PMID 25915195 DOI: 10.1038/Nnano.2015.71 |
0.428 |
|
2015 |
Wang X, Xia F. Van der Waals heterostructures: Stacked 2D materials shed light. Nature Materials. 14: 264-5. PMID 25643031 DOI: 10.1038/Nmat4218 |
0.322 |
|
2015 |
Wang X, Tian H, Xie W, Shu Y, Mi WT, Mohammad MA, Xie QY, Yang Y, Xu JB, Ren TL. Observation of a giant two-dimensional band-piezoelectric effect on biaxial-strained graphene Npg Asia Materials. 7: e154. DOI: 10.1038/Am.2014.124 |
0.591 |
|
2015 |
Jia Y, Zhao H, Guo Q, Wang X, Wang H, Xia F. Tunable Plasmon-Phonon Polaritons in Layered Graphene-Hexagonal Boron Nitride Heterostructures Acs Photonics. 2: 907-912. DOI: 10.1021/Acsphotonics.5B00099 |
0.468 |
|
2015 |
Zhao H, Wu J, Zhong H, Guo Q, Wang X, Xia F, Yang L, Tan P, Wang H. Interlayer interactions in anisotropic atomically thin rhenium diselenide Nano Research. 8: 3651-3661. DOI: 10.1007/S12274-015-0865-0 |
0.355 |
|
2014 |
Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han SJ. Black phosphorus radio-frequency transistors. Nano Letters. 14: 6424-9. PMID 25347787 DOI: 10.1021/Nl5029717 |
0.371 |
|
2014 |
He D, Zhang Y, Wu Q, Xu R, Nan H, Liu J, Yao J, Wang Z, Yuan S, Li Y, Shi Y, Wang J, Ni Z, He L, Miao F, ... ... Wang X, et al. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nature Communications. 5: 5162. PMID 25330787 DOI: 10.1038/Ncomms6162 |
0.525 |
|
2014 |
Tian H, Tan Z, Wu C, Wang X, Mohammad MA, Xie D, Yang Y, Wang J, Li LJ, Xu J, Ren TL. Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions. Scientific Reports. 4: 5951. PMID 25109609 DOI: 10.1038/Srep05951 |
0.485 |
|
2014 |
Wang X, Xie W, Xu JB. Graphene based non-volatile memory devices. Advanced Materials (Deerfield Beach, Fla.). 26: 5496-503. PMID 24497002 DOI: 10.1002/Adma.201306041 |
0.543 |
|
2014 |
Wang X, Xie W, Chen J, Xu JB. Homo- and hetero- p-n junctions formed on graphene steps. Acs Applied Materials & Interfaces. 6: 3-8. PMID 24182202 DOI: 10.1021/Am402808P |
0.598 |
|
2014 |
Cheng Z, Tsang HK, Wang X, Xu K, Xu J. In-Plane Optical Absorption and Free Carrier Absorption in Graphene-on-Silicon Waveguides Ieee Journal of Selected Topics in Quantum Electronics. 20: 43-48. DOI: 10.1109/Jstqe.2013.2263115 |
0.577 |
|
2014 |
Xie WG, Lai X, Wang XM, Wan X, Yan ML, Mai WJ, Liu PY, Chen J, Xu JB. Influence of annealing on raman spectrum of graphene in different gaseous environments Spectroscopy Letters. 47: 465-470. DOI: 10.1080/00387010.2013.809595 |
0.577 |
|
2013 |
Wang X, Xu H, Min J, Peng LM, Xu JB. Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances. Nanoscale. 5: 2811-7. PMID 23440092 DOI: 10.1039/C3Nr33940H |
0.549 |
|
2013 |
Wang X, Cheng Z, Xu K, Tsang HK, Xu J. High-responsivity graphene/silicon-heterostructure waveguide photodetectors Nature Photonics. 7: 888-891. DOI: 10.1038/Nphoton.2013.241 |
0.59 |
|
2013 |
Shao L, Wang X, Xu H, Wang J, Xu J, Peng L, Lin H. Nanoantenna-Sandwiched Graphene with Giant Spectral Tuning in the Visible-to-Near-Infrared Region Advanced Optical Materials. 2: 162-170. DOI: 10.1002/Adom.201300313 |
0.61 |
|
2012 |
Wang X, Xie W, Du J, Wang C, Zhao N, Xu JB. Graphene/metal contacts: bistable states and novel memory devices. Advanced Materials (Deerfield Beach, Fla.). 24: 2614-9. PMID 22488980 DOI: 10.1002/Adma.201104574 |
0.593 |
|
2012 |
Wang X, Wang C, Xu J. P-N Junction Formation in Electron-beam Irradiated Graphene Step Mrs Proceedings. 1407. DOI: 10.1557/Opl.2012.777 |
0.577 |
|
2012 |
Xie W, Wang X, Xu J. Intermolecular Coupling Related Electrical Transport Transition in Vanadyl-Phthalocyanine (VOPc) Molecular Bilayers The Journal of Physical Chemistry C. 116: 17580-17585. DOI: 10.1021/Jp304103G |
0.459 |
|
2012 |
Chen K, Wang X, Xu J, Pan L, Wang X, Shi Y. Electronic Properties of Graphene Altered by Substrate Surface Chemistry and Externally Applied Electric Field The Journal of Physical Chemistry C. 116: 6259-6267. DOI: 10.1021/Jp211255T |
0.602 |
|
2011 |
Wang X, Xu JB, Wang C, Du J, Xie W. High-performance graphene devices on SiO₂/Si substrate modified by highly ordered self-assembled monolayers. Advanced Materials (Deerfield Beach, Fla.). 23: 2464-8. PMID 21484896 DOI: 10.1002/Adma.201100476 |
0.556 |
|
2011 |
Wang C, Liang Z, Liu Y, Wang X, Zhao N, Miao Q, Hu W, Xu J. Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene Journal of Materials Chemistry. 21: 15201. DOI: 10.1039/C1Jm13153B |
0.447 |
|
2011 |
Wang X, Xu J, Xie W, Du J. Quantitative Analysis of Graphene Doping by Organic Molecular Charge Transfer The Journal of Physical Chemistry C. 115: 7596-7602. DOI: 10.1021/Jp200386Z |
0.605 |
|
2011 |
Wang C, Wang X, Min J, Zhao N, Xu J. Super-linear rectifying property of rubrene single crystal devices Organic Electronics. 12: 1731-1735. DOI: 10.1016/J.Orgel.2011.06.024 |
0.524 |
|
2010 |
Tian X, Xu J, Wang X. Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field. The Journal of Physical Chemistry. B. 114: 11377-81. PMID 20690622 DOI: 10.1021/Jp102800V |
0.567 |
|
2010 |
Wang X, Song F, Chen Q, Wang T, Wang J, Liu P, Shen M, Wan J, Wang G, Xu JB. Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: a case study on Co-doped ZnO. Journal of the American Chemical Society. 132: 6492-7. PMID 20405827 DOI: 10.1021/Ja100912K |
0.454 |
|
2009 |
Hua R, Xu JB, Wang JC, Zhu L, Li B, Liu Y, Huang SD, Jin L, Xu ZY, Wang XF. Association of TNFAIP3 polymorphism with rheumatic heart disease in Chinese Han population. Immunogenetics. 61: 739-44. PMID 19902201 DOI: 10.1007/S00251-009-0405-8 |
0.316 |
|
2009 |
Zhang ZH, Wang X, Xu JB, Muller S, Ronning C, Li Q. Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures. Nature Nanotechnology. 4: 523-7. PMID 19662016 DOI: 10.1038/Nnano.2009.181 |
0.391 |
|
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