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Eric M. Rehder, Ph.D. - Publications

Affiliations: 
2002 University of Wisconsin, Madison, Madison, WI 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Mechanical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Rehder EM, Inoki CK, Kuan TS, Kuech TF. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study Journal of Applied Physics. 94: 7892-7903. DOI: 10.1063/1.1628406  0.614
2002 Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain relaxation in SiGe thin films studied by low-energy electron microscopy Materials Research Society Symposium - Proceedings. 696: 119-124.  0.583
2001 Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy Mrs Proceedings. 696. DOI: 10.1557/Proc-696-N4.2  0.482
2001 Rehder EM, Kuan TS, Kuech TF. Mechanism for the reduction of threading dislocation densities in Si0.82Ge0.18 films on silicon on insulator substrates Materials Research Society Symposium - Proceedings. 673. DOI: 10.1557/Proc-673-P5.3  0.633
1999 Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 322-326. DOI: 10.1557/S1092578300002660  0.565
1998 Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of Ain on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G3.56  0.561
1997 Zhou M, Perkins NR, Rehder E, Kuech TF, Babcock SE. The Effect of Growth Temperature On The Microstructure of Movpe AlN/Si (111) Mrs Proceedings. 482. DOI: 10.1557/Proc-482-185  0.585
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