| Year |
Citation |
Score |
| 2009 |
Wellenius P, LeBoeuf S, Kolbas RM, Aumer M, Tucker J, Muth JF. Optical properties of high mole-fraction europium doped beta gallium oxide Materials Research Society Symposium Proceedings. 1111: 229-234. |
0.315 |
|
| 2008 |
Al-Ajmi FS, Kolbas RM, Roberts JC, Rajagopal P, Cook JW, Piner EL, Linthicum KJ. Stimulated emission and lasing from an Al0.13 Ga0.87 NGaN double heterostructure grown on a silicon substrate Applied Physics Letters. 92. DOI: 10.1063/1.2819614 |
0.748 |
|
| 2007 |
Al-Ajmi FS, Kolbas RM, Roberts JC, Rajagopal P, Cook JW, Piner EL, Linthicum KJ. Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate Applied Physics Letters. 90. DOI: 10.1063/1.2722201 |
0.746 |
|
| 2006 |
Chang YC, Kolbas RM, Reitmeier ZJ, Davis RF. Effect of thermal annealing on the metastable optical properties of GaN thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1051-1054. DOI: 10.1116/1.2209656 |
0.369 |
|
| 2003 |
Chang YC, Cai AL, Muth JF, Kolbas RM, Park M, Cuomo JJ, Hanser A, Bumgarner J. Optical and structural studies of hydride vapor phase epitaxy grown GaN Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 701-705. DOI: 10.1116/1.1568346 |
0.614 |
|
| 2002 |
Park M, Carlson E, Chang YC, Muth JF, Bumgarner J, Kolbas RM, Cuomo JJ, Nemanich RJ. Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy Materials Research Society Symposium - Proceedings. 743: 323-328. DOI: 10.1557/Proc-743-L4.12 |
0.417 |
|
| 2002 |
Kou L, Hall DC, Strohhöfer C, Polman A, Zhang T, Kolbas RM, Heller RD, Dupuis RD. Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization Ieee Journal On Selected Topics in Quantum Electronics. 8: 880-890. DOI: 10.1109/Jstqe.2002.801689 |
0.552 |
|
| 2002 |
Park M, Maria JP, Cuomo JJ, Chang YC, Muth JF, Kolbas RM, Nemanich RJ, Carlson E, Bumgarner J. X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy Applied Physics Letters. 81: 1797-1799. DOI: 10.1063/1.1506781 |
0.37 |
|
| 2002 |
Chang YC, Cai AL, Johnson MAL, Muth JF, Kolbas RM, Reitmeier ZJ, Einfeldt S, Davis RF. Electron-beam-induced optical memory effects in GaN Applied Physics Letters. 80: 2675-2677. DOI: 10.1063/1.1469222 |
0.569 |
|
| 2001 |
Chang YC, Oberhofer AE, Muth JF, Kolbas RM, Davis RF. Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN Applied Physics Letters. 79: 281-283. DOI: 10.1063/1.1381417 |
0.398 |
|
| 2001 |
Teng CW, Aboelfotoh MO, Davis RF, Muth JF, Kolbas RM. Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers Applied Physics Letters. 78: 1688-1690. DOI: 10.1063/1.1353836 |
0.461 |
|
| 2001 |
Park M, Teng CW, Sakhrani V, McLaurin MB, Kolbas RM, Sanwald RC, Nemanich RJ, Hren JJ, Cuomo JJ. Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution Journal of Applied Physics. 89: 1130-1137. DOI: 10.1063/1.1332421 |
0.318 |
|
| 2000 |
Muth JF, Teng CW, Sharma AK, Kvit A, Kolbas RM, Narayan J. Growth of ZnO/MgZnO superlattice on sapphire Materials Research Society Symposium - Proceedings. 623: 353-358. DOI: 10.1557/Proc-617-J6.7 |
0.411 |
|
| 2000 |
Sharma AK, Muth JF, Kvit A, Narayan J, Kolbas RM. Optical and structural characteristics of Gold nanocrystallites embedded in a dielectric matrix Materials Research Society Symposium - Proceedings. 617. DOI: 10.1557/Proc-617-J2.7 |
0.383 |
|
| 2000 |
Sharma AK, Jin C, Kvit A, Narayan J, Muth JF, Teng CW, Kolbas RM, Holland OW. Structural and optical property investigations on mg-alloying in epitaxial zinc oxide films on sapphire Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.87 |
0.417 |
|
| 2000 |
Teng CW, Muth JF, Kolbas RM, Hassan KM, Sharma AK, Kvit A, Narayan J. Quantum confinement of above-band-gap transitions in Ge quantum dots Materials Research Society Symposium - Proceedings. 588: 263-275. DOI: 10.1557/Proc-588-263 |
0.499 |
|
| 2000 |
Hassan KM, Sharma AK, Narayan J, Muth JF, Teng CW, Kolbas RM. Size effect in germanium nanostructures fabricated by pulsed laser deposition Materials Research Society Symposium - Proceedings. 581: 163-167. DOI: 10.1557/Proc-581-163 |
0.518 |
|
| 2000 |
Teng CW, Muth JF, Kolbas RM, Hassan KM, Sharma AK, Kvit A, Narayan J. Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in an Al2O3 or an AIN matrix Applied Physics Letters. 76: 43-45. DOI: 10.1063/1.125650 |
0.491 |
|
| 2000 |
Balkaş CM, Sitar Z, Bergman L, Shmagin IK, Muth JF, Kolbas R, Nemanich RJ, Davis RF. Growth and characterization of GaN single crystals Journal of Crystal Growth. 208: 100-106. DOI: 10.1016/S0022-0248(99)00445-5 |
0.398 |
|
| 2000 |
Sharma AK, Jin C, Kvit A, Narayan J, Muth JF, Teng CW, Kolbas RM, Holland OW. Structural and optical property investigations on mg-alloying in epitaxial zinc oxide films on sapphire Materials Research Society Symposium - Proceedings. 595. |
0.307 |
|
| 1999 |
Muth JF, Brown JD, Johnson MAL, Zhonghai YU, Kolbas RM, Cook JW, Schetzina JF. Absorption coefficient and refractive index of GaN, AIN and AlGaN alloys Materials Research Society Symposium - Proceedings. 537: G5.2. DOI: 10.1557/S1092578300002957 |
0.375 |
|
| 1999 |
Joshkin VA, Parker CA, Bedair SM, Muth JF, Shmagin IK, Kolbas RM, Piner EL, Molnar RJ. Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy Journal of Applied Physics. 86: 281-288. DOI: 10.1063/1.370727 |
0.395 |
|
| 1999 |
Muth JF, Kolbas RM, Sharma AK, Oktyabrsky S, Narayan J. Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition Journal of Applied Physics. 85: 7884-7887. DOI: 10.1063/1.370601 |
0.434 |
|
| 1999 |
Sharma AK, Narayan J, Muth JF, Teng CW, Jin C, Kvit A, Kolbas RM, Holland OW. Optical and structural properties of epitaxial MgxZn1-xO alloys Applied Physics Letters. 75: 3327-3329. DOI: 10.1063/1.125340 |
0.431 |
|
| 1999 |
Hassan KM, Sharma AK, Narayan J, Muth JF, Teng CW, Kolbas RM. Optical and structural studies of Ge nanocrystals embedded in AIN matrix fabricated by pulsed laser deposition Applied Physics Letters. 75: 1222-1224. DOI: 10.1063/1.124648 |
0.514 |
|
| 1999 |
Bergmann MJ, Özgür Ü, Casey HC, Muth JF, Chang YC, Kolbas RM, Rao RA, Eom CB, Schurman M. Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer Applied Physics Letters. 74: 3188-3190. DOI: 10.1063/1.124102 |
0.641 |
|
| 1998 |
Milewski PD, Streiffer SK, Kingon AI, Shmagin IK, Kolbas RM, Krishnankutty S. Selective deposition and luminescence characterization of Eu‐doped Y2O3 nanoparticles by microwave plasma synthesis Journal of the Society For Information Display. 6: 143-147. DOI: 10.1889/1.1985222 |
0.336 |
|
| 1998 |
Wei Q, Sharma A, Narayan R, Ravindra N, Oktyabrsky S, Sankar J, Muth J, Kolbas R, Narayan J. Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition Mrs Proceedings. 526. DOI: 10.1557/Proc-526-331 |
0.42 |
|
| 1998 |
Sharma AK, Dovidenko K, Oktyabrsky S, Moxey DE, Muth JF, Kolbas RM, Narayan J. Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation Materials Research Society Symposium - Proceedings. 526: 305-310. DOI: 10.1557/Proc-526-305 |
0.358 |
|
| 1998 |
Osinsky A, Gangopadhyay S, Yang JW, Gaska R, Kuksenkov D, Temkin H, Shmagin IK, Chang YC, Muth JF, Kolbas RM. Visible-blind GaN Schottky barrier detectors grown on Si(111) Applied Physics Letters. 72: 551-553. DOI: 10.1063/1.120755 |
0.417 |
|
| 1998 |
Kolbas RM, Shmagin IK, Muth JF. Optical properties of wide bandgap III-V nitride semiconductors International Conference On Solid-State and Integrated Circuit Technology Proceedings. 609-612. |
0.3 |
|
| 1998 |
Wei Q, Sharma AK, Narayan RJ, Ravindra NM, Oktyabrsky S, Sankar J, Muth JF, Kolbas RM, Narayan J. Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition Materials Research Society Symposium - Proceedings. 526: 331-336. |
0.316 |
|
| 1997 |
Joshkin VA, Roberts JC, Piner EL, Behbehani MK, McIntosh FG, Wang L, Lin S, Shmagin I, Krishnankutty S, Kolbas RM, El-Masry NA, Bedair SM. Growth and characterization of In-based nitride compounds and their double heterostructures Materials Research Society Symposium - Proceedings. 468: 13-21. DOI: 10.1557/Proc-468-13 |
0.438 |
|
| 1997 |
Balkas CM, Sitar Z, Zheleva T, Bergman L, Muth JF, Shmagin IK, Kolbas R, Nemanich R, Davis RF. Growth of bulk AlN and GaN single crystals by sublimation Materials Research Society Symposium - Proceedings. 449: 41-46. DOI: 10.1557/Proc-449-41 |
0.346 |
|
| 1997 |
Shmagin IK, Muth JF, Krishnankutty S, Kolbas RM, Keller S, Mishra UK, Denbaars SP. Stimulated emission and GaIn measurements from InGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 449: 1209-1214. DOI: 10.1557/Proc-449-1209 |
0.442 |
|
| 1997 |
Shen TD, Shmagin I, Koch CC, Kolbas RM, Fahmy Y, Bergman L, Nemanich RJ, McClure MT, Sitar Z, Quan MX. Photoluminescence from mechanically milled Si andSiO2spowders Physical Review B. 55: 7615-7623. DOI: 10.1103/Physrevb.55.7615 |
0.309 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Mishra UK, DenBaars SP. Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration Journal of Applied Physics. 81: 2021-2023. DOI: 10.1063/1.364058 |
0.434 |
|
| 1997 |
Muth JF, Lee JH, Shmagin IK, Kolbas RM, Casey HC, Keller BP, Mishra UK, DenBaars SP. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements Applied Physics Letters. 71: 2572-2574. DOI: 10.1063/1.120191 |
0.357 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Mack MP, Abare AC, Keller S, Coldren LA, Mishra UK, DenBaars SP. Reconfigurable optical properties in InGaN/GaN quantum wells Applied Physics Letters. 71: 1455-1457. DOI: 10.1063/1.119935 |
0.402 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Dupuis RD, Grudowski PA, Eiting CJ, Park J, Shelton BS, Lambert DJH. Optical data storage in InGaN/GaN heterostructures Applied Physics Letters. 71: 1382-1384. DOI: 10.1063/1.119900 |
0.537 |
|
| 1997 |
Shmagin IK, Muth JF, Lee JH, Kolbas RM, Balkas CM, Sitar Z, Davis RF. Optical metastability in bulk GaN single crystals Applied Physics Letters. 71: 455-457. DOI: 10.1063/1.119577 |
0.422 |
|
| 1997 |
Zavada JM, Abernathy CR, Pearton SJ, Mackenzie JD, Mileham JR, Wilson RG, Schwartz RN, Haggerott-Crawford M, Shul RJ, Kilcoyne SP, Zhang D, Kolbas RM. Microdisk laser structures formed in III-V nitride epilayers Solid-State Electronics. 41: 353-357. DOI: 10.1016/S0038-1101(96)00244-4 |
0.455 |
|
| 1997 |
Keller S, Keller B, Kapolnek D, Mishra U, DenBaars S, Shmagin I, Kolbas R, Krishnankutty S. Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition Journal of Crystal Growth. 170: 349-352. DOI: 10.1016/S0022-0248(96)00553-2 |
0.474 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Abare AC, Coldren LA, Mishra UK, Baars SPD. Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells Journal of Electronic Materials. 26: 325-329. DOI: 10.1007/S11664-997-0172-Y |
0.501 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Abare AC, Coldren LA, Mishra UK, Den Baars SP. Photoluminescence characteristics of GaN/InGaN/GaN quantum wells Journal of Electronic Materials. 26: 325-329. |
0.409 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Mishra UK, DenBaars SP. Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration Journal of Applied Physics. 81: 2021-2023. |
0.327 |
|
| 1997 |
Dupuis RD, Grudowski PA, Eiting CJ, Park J, Shelton BS, Lambert DJH, Shmagin I, Kolbas RM. Optical properties of InGaN double heterostructures and quantum wells grown by metalorganic chemical vapor deposition Leos Summer Topical Meeting. 5-7. |
0.382 |
|
| 1997 |
Keller S, Keller BP, Kapolnek D, Mishra UK, DenBaars SP, Shmagin IK, Kolbas RM, Krishnankutty S. Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition Journal of Crystal Growth. 170: 349-352. |
0.376 |
|
| 1996 |
Hsieh KC, Hsieh KY, Hwang YL, Zhang T, Kolbas RM. Strain-induced phase separation in annealed low-temperature grown Al0.3Ga0.7As Applied Physics Letters. 68: 1790-1792. DOI: 10.1063/1.116668 |
0.326 |
|
| 1996 |
Abernathy C, Pearton S, MacKenzie J, Mileham J, Bharatan S, Krishnamoorthy V, Jones K, Hagerott-Crawford M, Shul R, Kilcoyne S, Zavada J, Zhang D, Kolbas R. Growth and fabrication of GaNInGaN microdisk laser structures Solid-State Electronics. 39: 311-313. DOI: 10.1016/0038-1101(95)00177-8 |
0.358 |
|
| 1996 |
Zhang D, Kolbas RM. Optical absorption and stimulated emission in ultrathin single quantum wells Solid State Communications. 98: 645-649. DOI: 10.1016/0038-1098(95)00805-5 |
0.339 |
|
| 1995 |
Yuan C, Salagaj T, Gurary A, Thompson AG, Kroll W, Stall RA, Hwang CY, Schurman M, Li Y, Mayo WE, Lu Y, Krishnankutty S, Shmagin IK, Kolbas RM, Pearton SJ. Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 2075-2080. DOI: 10.1116/1.588080 |
0.402 |
|
| 1995 |
Zhang D, Zhang T, Kolbas RM, Zavada JM. Optical characteristics of erbium doped AlGaAs-GaAs heterostructures International Conference On Solid-State and Integrated Circuit Technology Proceedings. 506-508. |
0.347 |
|
| 1994 |
Zhang D, Kolbas RM, Milewski PD, Lichtenwalner DJ, Kingon AI, Zavada JM. Light emission from thermally oxidized silicon nanoparticles Applied Physics Letters. 65: 2684-2686. DOI: 10.1063/1.112602 |
0.322 |
|
| 1994 |
Milewski PD, Lichtenwalner DJ, Mehta P, Kingon AI, Zhang D, Kolbas RM. Light emission from crystalline silicon and amorphous silicon oxide (SiOx) nanoparticles Journal of Electronic Materials. 23: 57-62. DOI: 10.1007/Bf02651268 |
0.33 |
|
| 1993 |
Hsieh KY, Hwang YL, Zhang T, Kolbas RM. Compositional Modulations and Vertical Two-Dimensional Arsenic-Precipitate Arrays and in Low Temperature Grown Al 0.3 GA 0.7 AS Mrs Proceedings. 325: 395. DOI: 10.1557/Proc-325-395 |
0.32 |
|
| 1993 |
Zhang T, Sun J, Edwards NV, Moxey DE, Kolbas RM, Caldwell PJ. Photoluminescence Study of Energy Transfer Processes in Erbium Doped Al x Ga l−x As Grown by MBE Mrs Proceedings. 301. DOI: 10.1557/Proc-301-257 |
0.32 |
|
| 1993 |
Zhang T, Hwang Y, Sun J, Edwards NV, Kolbas RM, Caldwell PJ. Origin of photoluminescence from Er3+ centers in erbium doped GaAs and Al0.4Ga0.6 As grown by MBE Journal of Electronic Materials. 22: 1137-1140. DOI: 10.1007/Bf02817685 |
0.422 |
|
| 1993 |
Yin LW, Nguyen NX, Hwang Y, Ibbetson JP, Kolbas RM, Gossard AC, Mishra UK. Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation Journal of Electronic Materials. 22: 1503-1505. DOI: 10.1007/Bf02650008 |
0.38 |
|
| 1992 |
Steckl AJ, Chen P, Choo AG, Jackson HE, Boyd JT, Ezis A, Pronko PP, Novak SW, Kolbas RM. Enhanced photoluminescence from AlGaAs/GaAs superlattice gratings fabricated by Si FIB implantation Mrs Proceedings. 281. DOI: 10.1557/Proc-281-319 |
0.372 |
|
| 1992 |
Benjamin SD, Zhang T, Hwang YL, Mytych MS, Kolbas RM. Vertical cavity surface emitting laser with a submonolayer thick InAs active layer Applied Physics Letters. 60: 1800-1802. DOI: 10.1063/1.107169 |
0.399 |
|
| 1992 |
Yin LW, Ibbetson JP, Hashemi MM, Gossard AC, Mishra UK, Hwang Y, Zhang T, Kolbas RM. Investigation of the electronic properties of in situ annealed low-temperature gallium arsenide grown by molecular beam epitaxy Applied Physics Letters. 60: 2005-2007. DOI: 10.1063/1.107125 |
0.393 |
|
| 1992 |
Krishnankutty S, Kolbas RM, Khan MA, Kuznia JN, Van Hove JM, Olson DT. Optical characterization of AlGaN-GaN-AlGaN quantum wells Journal of Electronic Materials. 21: 437-440. DOI: 10.1007/Bf02660408 |
0.404 |
|
| 1992 |
Krishnankutty S, Kolbas RM, Khan MA, Kuznia JN, Van Hove JM, Olson DT. Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts Journal of Electronic Materials. 21: 609-612. DOI: 10.1007/Bf02655428 |
0.404 |
|
| 1991 |
Zhang D, Kolbas RM, Mehta P, Singh AK, Lichtenwalner DJ, Hsieh KY, Kingon AI. Visible Light Emission from Silicon Nanoparticles Mrs Proceedings. 256. DOI: 10.1557/Proc-256-35 |
0.381 |
|
| 1991 |
Mishra UK, Kolbas RM. Electronic and Optoelectronic Applications of Materials Grown at a Low Temperature by MBE Mrs Proceedings. 241. DOI: 10.1557/Proc-241-159 |
0.306 |
|
| 1991 |
Stecki AJ, Chen P, Choo A, Jackson H, Boyd JT, Pronko PP, Ezis A, Kolbas RM. Dose effects in Si FIB-mixing of short period AlGaAs/GaAs superlattices Mrs Proceedings. 240. DOI: 10.1557/Proc-240-703 |
0.329 |
|
| 1991 |
Sin YK, Hsieh KY, Lee JH, Hwang Y, Kolbas RM. InGaAs-GaAs-AlGaAs strained-layer laser with heavy silicon doping Journal of Applied Physics. 70: 568-573. DOI: 10.1063/1.349657 |
0.523 |
|
| 1991 |
Sin Y, Hsieh KY, Lee JH, Kolbas RM. Surface and bulk leakage currents in transverse junction stripe lasers Journal of Applied Physics. 69: 1081-1090. DOI: 10.1063/1.347375 |
0.309 |
|
| 1991 |
Asif Khan M, Kuznia JN, Van Hove JM, Olson DT, Krishnankutty S, Kolbas RM. Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition Applied Physics Letters. 58: 526-527. DOI: 10.1063/1.104575 |
0.407 |
|
| 1991 |
Sin YK, Hwang Y, Zhang T, Kolbas RM. Diffusion of zinc into gaas layers grown by molecular beam epitaxy at low substrate temperatures Journal of Electronic Materials. 20: 465-469. DOI: 10.1007/Bf02657827 |
0.399 |
|
| 1991 |
Kolbas RM, Hwang YL, Zhang T, Prairie M, Hsieh KY, Mishra UK. Enhanced/suppressed interdiffusion of lattice-matched and pseudomorphic III-V heterostructures by controlling Ga vacancies Optical and Quantum Electronics. 23. DOI: 10.1007/Bf00624971 |
0.423 |
|
| 1990 |
Dreifus DL, Han JW, Kolbas RM, Cook JW, Schetzina JF. Field-effect transistors in Hg1-xCdxTe grown by photoassisted molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1221-1225. DOI: 10.1116/1.576949 |
0.369 |
|
| 1990 |
Yin LW, Hwang Y, Lee JH, Kolbas RM, Trew RJ, Mishra UK. Improved Breakdown Voltage in GaAs MESFET's Utilizing Surface Layers of GaAs Grown at a Low Temperature by MBE Ieee Electron Device Letters. 11: 561-563. DOI: 10.1109/55.63040 |
0.372 |
|
| 1990 |
Kolbas RM, Lo YC, Lee JH. Laser Properties and Carrier Collection in Ultrathin Quantum-Well Heterostructures Ieee Journal of Quantum Electronics. 26: 25-31. DOI: 10.1109/3.44913 |
0.484 |
|
| 1990 |
KoŚcielniak WC, Pelouard JL, Kolbas RM, Littlejohn MA. Dark Current Characteristics of GaAs Metal-Semiconductor-Metal (MSM) Photodetectors Ieee Transactions On Electron Devices. 37: 1623-1629. DOI: 10.1109/16.55748 |
0.33 |
|
| 1990 |
Dreifus DL, Sneed BP, Ren J, Cook JW, Schetzina JF, Kolbas RM. ZnSe field-effect transistors Applied Physics Letters. 57: 1663-1665. DOI: 10.1063/1.104079 |
0.41 |
|
| 1990 |
Lee JH, Hsieh KY, Hwang YL, Kolbas RM. Stimulated visible light emission from ultrathin GaAs single and multiple quantum wells sandwiched between indirect-gap (Al0.49Ga 0.51As) confining layers Applied Physics Letters. 56: 1998-2000. DOI: 10.1063/1.102998 |
0.436 |
|
| 1990 |
Lee JH, Hsieh KY, Hwang YL, Kolbas RM. Stimulated emission from monolayer-thick AlxGa 1-xAs-GaAs single quantum well heterostructures Applied Physics Letters. 56: 626-628. DOI: 10.1063/1.102718 |
0.457 |
|
| 1990 |
Khan MA, Skogman RA, Van Hove JM, Krishnankutty S, Kolbas RM. Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells Applied Physics Letters. 56: 1257-1259. DOI: 10.1063/1.102530 |
0.445 |
|
| 1990 |
Prairie MW, Kolbas RM. A general derivation of the density of states function for quantum wells and superlattices Superlattices and Microstructures. 7: 269-277. DOI: 10.1016/0749-6036(90)90208-O |
0.301 |
|
| 1990 |
Hsieh KY, Hwang YL, Lee JH, Kolbas RM. Enhanced/suppressed interdiffusion of InGaAs-GaAs-AlGaAs strained layers by controlling impurities and gallium vacancies Journal of Electronic Materials. 19: 1417-1423. DOI: 10.1007/Bf02662832 |
0.425 |
|
| 1990 |
Hwang Y, Hsieh KY, Lee JH, Zhang T, Mishra UK, Kolbas RM. Effects of a low temperature GaAs buffer layer on the interdiffusion of GaAs/AlGaAs heterostructures during thermal annealing Proceedings of the 6th Conference On Semi-Insulating Iii-V. 77-82. |
0.373 |
|
| 1989 |
Pronko PP, McCormick AW, Patrizio DB, Rai AK, Kolbas RM, Frank BS. Ion Beam Mixing of GaAs/AlGaAs Superlattice and ITS Relationship to Amorphization Mrs Proceedings. 147. DOI: 10.1557/Proc-147-297 |
0.305 |
|
| 1989 |
Benjamin SD, Lo YC, Kolbas RM. Time-resolved phonon-assisted stimulated emission in quantum-well heterostructures Ieee Transactions On Electron Devices. 36: 2613. DOI: 10.1109/16.43725 |
0.402 |
|
| 1989 |
Lee JH, Hiseh KY, Kolbas RM. Stimulated emission from monolayer thick quantum-well heterostructures Ieee Transactions On Electron Devices. 36: 2613. DOI: 10.1109/16.43724 |
0.476 |
|
| 1989 |
Benjamin SD, Anderson NG, Kolbas RM. Carrier recombination dynamics in thin InGaAs/GaAs single quantum well heterostructures . 84-85. |
0.352 |
|
| 1988 |
Hwang S, Harper RL, Harris KA, Giles NC, Bicknell RN, Schetzina JF, Dreifus DL, Kolbas RM, Chu M. Growth and properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 6: 777-778. DOI: 10.1116/1.584373 |
0.413 |
|
| 1988 |
Dreifus DL, Kolbas RM, Tassitino JR, Harper RL, Bicknell RN, Schetzina JF. Electrical properties of CdTe metal-semiconductor field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2722-2724. DOI: 10.1116/1.575493 |
0.314 |
|
| 1988 |
Koscielniak WC, Kolbas RM, Littlejohn MA. Performance of a Near-Infrared GaAs Metal-Semiconductor-Metal (MSM) Photodetector with Islands Ieee Electron Device Letters. 9: 485-487. DOI: 10.1109/55.6953 |
0.307 |
|
| 1988 |
Dreifus DL, Kolbas RM, Harper RL, Tassitino JR, Hwang S, Schetzina JF. Diluted magnetic semiconductor (Cd1-xMnxTe) Schottky diodes and field-effect transistors Applied Physics Letters. 53: 1279-1281. DOI: 10.1063/1.99997 |
0.371 |
|
| 1988 |
Lo YC, Hsieh KY, Kolbas RM. Stimulated emission in ultrathin (20 Å) AlxGa 1-xAs-GaAs single quantum well heterostructures Applied Physics Letters. 52: 1853-1855. DOI: 10.1063/1.99619 |
0.466 |
|
| 1988 |
Koscielniak WC, Kolbas RM, Littlejohn MA, Licznerski BW. Photocurrent enhancement in a GaAs metal-semiconductor-metal photodetector due to ultrasmall Au islands Applied Physics Letters. 52: 987-989. DOI: 10.1063/1.99250 |
0.366 |
|
| 1988 |
Lo YC, Kolbas RM. Phonon-assisted stimulated emission in thin (<55 Å) AlGaAs-GaAs-AlGaAs single quantum wells Applied Physics Letters. 53: 2266-2268. DOI: 10.1063/1.100249 |
0.395 |
|
| 1988 |
Kolbas RM, Yang YJ, Hsieh KY. Strained layer and lattice matched transverse junction stripe quantum well lasers for continuous room temperature operation Superlattices and Microstructures. 4: 603-608. DOI: 10.1016/0749-6036(88)90246-7 |
0.491 |
|
| 1988 |
Lee GS, Hsieh KY, Kolbas RM. Negative differential resistance in InGaAs strained layer heterostructures Superlattices and Microstructures. 4: 537-540. DOI: 10.1016/0749-6036(88)90232-7 |
0.339 |
|
| 1987 |
Tischler MA, Anderson NG, Kolbas RM, Bedair SM. InAs/GaAs quantum well lasers grown by atomic layer epitaxy Proceedings of Spie - the International Society For Optical Engineering. 796: 170-174. DOI: 10.1117/12.941013 |
0.383 |
|
| 1987 |
Yang YJ, Hsieh KY, Kolbas RM. VB-3 Continuous Room-Temperature Operation of an InGaAs-GaAs-AlGaAs Strained-Layer Quantum Well Laser Ieee Transactions On Electron Devices. 34: 2379. DOI: 10.1109/T-Ed.1987.23304 |
0.465 |
|
| 1987 |
Dreifus DL, Kolbas RM, Harris KA, Bicknell RN, Harper RL, Schetzina JF. CdTe metal-semiconductor field-effect transistors Applied Physics Letters. 51: 931-933. DOI: 10.1063/1.98805 |
0.36 |
|
| 1987 |
Yang YJ, Hsieh KY, Kolbas RM. Continuous room-temperature operation of an InGaAs-GaAs-AlGaAs strained-layer laser Applied Physics Letters. 51: 215-217. DOI: 10.1063/1.98479 |
0.472 |
|
| 1987 |
Tischler MA, Anderson NG, Kolbas RM, Bedair SM. Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy Applied Physics Letters. 50: 1266-1268. DOI: 10.1063/1.97879 |
0.361 |
|
| 1987 |
Lee GS, Hsieh KY, Kolbas RM. Negative differential resistance in a strained-layer quantum-well structure with a bound state Journal of Applied Physics. 62: 3453-3456. DOI: 10.1063/1.339315 |
0.341 |
|
| 1987 |
Yang YJ, Hsieh KY, Kolbas RM. CONTINUOUS ROOM-TEMPERATURE OPERATION OF AN INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM WELL LASER Ieee Transactions On Electron Devices. |
0.356 |
|
| 1986 |
Anderson NG, Lo YC, Kolbas RM. High-efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1-xAs quantum wells Applied Physics Letters. 49: 758-760. DOI: 10.1063/1.97538 |
0.41 |
|
| 1986 |
Yang YJ, Lo YC, Lee GS, Hsieh KY, Kolbas RM. Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering Applied Physics Letters. 49: 835-837. DOI: 10.1063/1.97509 |
0.404 |
|
| 1986 |
Lee GS, Hsieh KY, Kolbas RM. Room-temperature negative differential resistance in strained-layer GaAs-AlGaAs-InGaAs quantum well heterostructures Applied Physics Letters. 49: 1528-1530. DOI: 10.1063/1.97271 |
0.371 |
|
| 1986 |
Ray S, Ruden P, Sokolov V, Kolbas R, Boonstra T, Williams J. Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition Applied Physics Letters. 48: 1666-1668. DOI: 10.1063/1.96849 |
0.39 |
|
| 1986 |
Anderson NG, Laidig WD, Kolbas RM, Lo YC. Optical characterization of pseudomorphic InxGa 1-xAs-GaAs single-quantum-well heterostructures Journal of Applied Physics. 60: 2361-2367. DOI: 10.1063/1.337146 |
0.31 |
|
| 1986 |
Kolbas RM, Yang JY, Lo YC, Lee GS, Hsieh KY. TRANSVERSE JUNCTION STRIPE LASER WITH A LATERAL HETEROBARRIER BY DIFFUSION-ENHANCED DISORDERING Ieee Transactions On Electron Devices. 1864. |
0.318 |
|
| 1980 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. Quantum-Well Heterostructure Lasers Ieee Journal of Quantum Electronics. 16: 170-186. DOI: 10.1109/Jqe.1980.1070447 |
0.644 |
|
| 1980 |
Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Hess K, Dupuis RD, Dapkus PD. PHONON-ASSISTED RECOMBINATION AND STIMULATED EMISSION IN QUANTUM-WELL Al//xGa//1// minus //xAs-GaAs HETEROSTRUCTURES. Journal of Applied Physics. 51: 1328-1337. DOI: 10.1063/1.327818 |
0.624 |
|
| 1980 |
Rezek EA, Chin R, Holonyak N, Kirchoefer SW, Kolbas RM. Quantum-well Inp-Inl-xGaxPl-zAsz heterostructure lasers grown by liquid phase epitaxy (LPE) Journal of Electronic Materials. 9: 1-27. DOI: 10.1007/BF02655212 |
0.414 |
|
| 1979 |
Holonyak N, Dupuis RD, Kolbas RM, Dapkus PD, Laidig WD, Vojak BA, Chin R. TA-B7 Phonon-Assisted Recombination in Quantum-Well MO-CVD AlxGa1−xAs-GaAs Heterostructure Lasers Ieee Transactions On Electron Devices. 26: 1837. DOI: 10.1109/T-Ed.1979.19726 |
0.599 |
|
| 1979 |
Dupuis RD, Kolbas RM, Dapkus PD, Holonyak N. Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition Ieee Journal of Quantum Electronics. 15: 756-761. DOI: 10.1109/Jqe.1979.1070091 |
0.67 |
|
| 1979 |
Dupuis RD, Dapkus PD, Holonyak N, Kolbas RM. Continuous room-temperature multiple-quantum-well AlxGa 1-xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 35: 487-489. DOI: 10.1063/1.91206 |
0.666 |
|
| 1979 |
Rezek EA, Chin R, Holonyak N, Kirchoefer SW, Kolbas RM. Phonon-assisted recombination in a multiple-quantum-well LPE InP-In 1-xGaxP1-zAsz heterostructure laser Applied Physics Letters. 35: 45-47. DOI: 10.1063/1.90924 |
0.458 |
|
| 1979 |
Holonyak N, Kolbas RM, Laidig WD, Altarelli M, Dupuis RD, Dapkus PD. Phonon-sideband MO-CVD quantum-well AlxGa1-xAs-GaAs heterostructure laser Applied Physics Letters. 34: 502-505. DOI: 10.1063/1.90843 |
0.469 |
|
| 1979 |
Chin R, Holonyak N, Kirchoefer SW, Kolbas RM, Rezek EA. Determination of the valence-band discontinuity of InP1-xGa xP1-zAsz (x∼0.13, z∼0.29) by quantum-well luminescence Applied Physics Letters. 34: 862-864. DOI: 10.1063/1.90702 |
0.451 |
|
| 1979 |
Holonyak N, Kolbas RM, Laidig W, Vojak BA, Dupuis RD, Dapkus PD. MO-CVD QUANTUM-WELL Al//xGa//1// minus //xAs minus GaAs HETEROSTRUCTURE LASERS Institute of Physics Conference Series. 387-395. |
0.374 |
|
| 1978 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. MP-B1 Photopumped MO-CVD Quantum-Well Al<inf>x</inf>Ga<inf>1−x</inf>As GaAs-AlxGa<inf>1−x</inf>As Heterostructure Lasers (x = 0.4–0.6, Lz ⩽ 200 Å T = 4.2–300 K) Ieee Transactions On Electron Devices. 25: 1342. DOI: 10.1109/T-Ed.1978.19293 |
0.655 |
|
| 1978 |
Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Dupuis RD, Dapkus PD. Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1-xAs-GaAs quantum-well heterostructures Applied Physics Letters. 33: 737-739. DOI: 10.1063/1.90522 |
0.626 |
|
| 1978 |
Dupuis RD, Dapkus PD, Kolbas RM, Holonyak N, Shichijo H. Photopumped laser operation of MO-CVD AlxGa1-xAs near a GaAs quantum well (λ≳6200 Å, 77°K) Applied Physics Letters. 33: 596-598. DOI: 10.1063/1.90473 |
0.399 |
|
| 1978 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. Room-temperature continuous operation of photopumped MO-CVD Al xGa1-xAs-GaAs-AlxGa1-xAs quantum-well lasers Applied Physics Letters. 33: 73-75. DOI: 10.1063/1.90150 |
0.657 |
|
| 1978 |
Chin R, Holonyak N, Kolbas RM, Rossi JA, Keune DL, Groves WO. Single thin-active-layer visible-spectrum In1-xGa xP1-zAsz heterostructure lasers Journal of Applied Physics. 49: 2551-2556. DOI: 10.1063/1.325062 |
0.325 |
|
| 1978 |
Holonyak N, Kolbas RM, Rezek EA, Chin R, Dupuis RD, Dapkus PD. Bandfilling in metalorganic chemical vapor deposited AlxGa 1-xAs-GaAs-AlxGa1-xAs quantum-well heterostructure lasers Journal of Applied Physics. 49: 5392-5397. DOI: 10.1063/1.324494 |
0.639 |
|
| 1978 |
Shichijo H, Kolbas RM, Holonyak N, Dupuis RD, Dapkus PD. Carrier collection in a semiconductor quantum well Solid State Communications. 27: 1029-1032. DOI: 10.1016/0038-1098(78)91031-1 |
0.303 |
|
| 1978 |
Dupuis RD, Dapkus PD, Kolbas RM, Holonyak N. Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) Solid State Communications. 27: 531-533. DOI: 10.1016/0038-1098(78)90388-5 |
0.54 |
|
| Show low-probability matches. |
