| Year |
Citation |
Score |
| 2019 |
Bente E, Gioannini M, He S, Lester L, Shterengas L. Introduction to the JSTQE Special Issue on Semiconductor Lasers Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-3. DOI: 10.1109/Jstqe.2019.2950783 |
0.371 |
|
| 2019 |
Stutz S, Auth D, Weber C, Drzewietzki L, Nikiforov O, Rosales R, Walther T, Lester LF, Breuer S. Dynamic Intermode Beat Frequency Control of an Optical Frequency Comb Single Section Quantum Dot Laser by Dual-Cavity Optical Self-Injection Ieee Photonics Journal. 11: 1-8. DOI: 10.1109/Jphot.2019.2932452 |
0.476 |
|
| 2019 |
Birkholz M, Javaloyes J, Nikiforov O, Weber C, Lester LF, Breuer S. Repetition rate transitions and timing stability improvement in monolithic multi-section semiconductor lasers Materials Today: Proceedings. 7: 904-907. DOI: 10.1016/J.Matpr.2018.12.091 |
0.487 |
|
| 2018 |
Robertson J, Ackemann T, Lester LF, Hurtado A. Externally-Triggered Activation and Inhibition of Optical Pulsating Regimes in Quantum-Dot Mode-locked Lasers. Scientific Reports. 8: 12515. PMID 30131544 DOI: 10.1038/S41598-018-30758-2 |
0.468 |
|
| 2017 |
Wang Z, Fanto ML, Steidle JA, Aboketaf AA, Rummage NA, Thomas PM, Lee C, Guo W, Lester LF, Preble SF. Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding Applied Physics Letters. 110: 141110. DOI: 10.1063/1.4979534 |
0.567 |
|
| 2016 |
Wang C, Raghunathan R, Schires K, Chan SC, Lester LF, Grillot F. Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation. Optics Letters. 41: 1153-1156. PMID 26977657 DOI: 10.1364/Ol.41.001153 |
0.528 |
|
| 2016 |
Hudait M, Clavel MB, Lester L, Saladukha D, Ochalski TJ, Murphy-Armando F. Heterogeneously grown tunable group-IV laser on silicon Proceedings of Spie. 9755: 11. DOI: 10.1117/12.2218364 |
0.399 |
|
| 2015 |
Raghunathan R, Olinger J, Hurtado A, Grillot F, Kovanis V, Lester LF. Analysis of dual-mode lasing characteristics in a 1310-nm optically injected quantum dot distributed feedback laser Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2080690 |
0.485 |
|
| 2015 |
Murrell DA, Raghunathan R, Lester LF. A model for a quantum-dot gain-lever mode-locked laser Ieee Photonics Technology Letters. 27: 1441-1444. DOI: 10.1109/Lpt.2015.2424687 |
0.577 |
|
| 2015 |
Hurtado A, Raghunathan R, Henning ID, Adams MJ, Lester LF. Simultaneous Microwave- and Millimeter-Wave Signal Generation with a 1310-nm Quantum-Dot-Distributed Feedback Laser Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2438435 |
0.489 |
|
| 2015 |
Hurtado A, Raghunathan R, Henning ID, Adams MJ, Lester LF. Patterns of microwave frequency switching and bistability in an injected QD DFB Laser 2015 Ieee Photonics Conference, Ipc 2015. 605-606. DOI: 10.1109/IPCon.2015.7323596 |
0.362 |
|
| 2015 |
Wang Z, Yao R, Preble SF, Lee CS, Lester LF, Guo W. High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding Applied Physics Letters. 107. DOI: 10.1063/1.4938205 |
0.547 |
|
| 2014 |
Lester LF, Naderi NA, Grillot F, Raghunathan R, Kovanis V. Strong optical injection and the differential gain in a quantum dash laser. Optics Express. 22: 7222-8. PMID 24664070 DOI: 10.1364/Oe.22.007222 |
0.565 |
|
| 2014 |
Pochet M, Usechak NG, Schmidt J, Lester LF. Modulation response of a long-cavity, gain-levered quantum-dot semiconductor laser. Optics Express. 22: 1726-34. PMID 24515179 DOI: 10.1364/Oe.22.001726 |
0.482 |
|
| 2014 |
Pochet M, Usechak NG, Schmidt J, Lester LF. Modulation response of a long-cavity, gainlevered quantum-dot semiconductor laser Optics Express. 22: 1726-1734. DOI: 10.1364/OE.22.001726 |
0.479 |
|
| 2014 |
Murrell D, Raghunathan R, Lester LF. Analytical theory for a quantum dot gain levered mode locked laser 2014 Ieee Photonics Conference, Ipc 2014. 250-251. DOI: 10.1109/IPCon.2014.6995342 |
0.454 |
|
| 2014 |
Murrell D, Raghunathan R, Lester LF. Extending the repetition rate of passively mode-locked quantum dot lasers 2014 Ieee Photonics Conference, Ipc 2014. 246-247. DOI: 10.1109/IPCon.2014.6995340 |
0.476 |
|
| 2014 |
Mee JK, Raghunathan R, Wright JB, Lester LF. Device geometry considerations for ridge waveguide quantum dot mode-locked lasers Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/23/233001 |
0.534 |
|
| 2014 |
Raghunathan R, Grillot F, Mee JK, Murrell D, Kovanis V, Lester LF. Publisher's Note: “Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser” [Appl. Phys. Lett. 105, 041112 (2014)] Applied Physics Letters. 105: 099902. DOI: 10.1063/1.4894422 |
0.486 |
|
| 2014 |
Raghunathan R, Grillot F, Mee JK, Murrell D, Kovanis V, Lester LF. Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser Applied Physics Letters. 105. DOI: 10.1063/1.4891576 |
0.553 |
|
| 2014 |
Wright JB, Campione S, Liu S, Martinez JA, Xu H, Luk TS, Li Q, Wang GT, Swartzentruber BS, Lester LF, Brener I. Distributed feedback gallium nitride nanowire lasers Applied Physics Letters. 104. DOI: 10.1063/1.4862193 |
0.41 |
|
| 2014 |
Raghunathan R, Grillot F, Mee JK, Lester LF. Impact of Absorber Bias Voltage on the Optical Feedback Sensitivity of a Passively Mode-Locked Quantum Dot Laser Operating at Elevated Temperature Optics Infobase Conference Papers. |
0.469 |
|
| 2014 |
Mee JK, Raghunathan R, Murrell D, Braga A, Li Y, Lester LF. Experimental study of the stability of harmonic mode-locking in quantum dot passively mode-locked lasers Optics Infobase Conference Papers. |
0.424 |
|
| 2013 |
Wright JB, Liu S, Wang GT, Li Q, Benz A, Koleske DD, Lu P, Xu H, Lester L, Luk TS, Brener I, Subramania G. Multi-colour nanowire photonic crystal laser pixels. Scientific Reports. 3: 2982. PMID 24135975 DOI: 10.1038/Srep02982 |
0.502 |
|
| 2013 |
Hurtado A, Mee J, Nami M, Henning ID, Adams MJ, Lester LF. Tunable microwave signal generator with an optically-injected 1310 nm QD-DFB laser. Optics Express. 21: 10772-8. PMID 23669934 DOI: 10.1364/Oe.21.010772 |
0.537 |
|
| 2013 |
Li Y, Lester LF, Chang D, Langrock C, Fejer MM, Kane DJ. Characteristics and instabilities of mode-locked quantum-dot diode lasers. Optics Express. 21: 8007-17. PMID 23571891 DOI: 10.1364/Oe.21.008007 |
0.568 |
|
| 2013 |
Hurtado A, Nami M, Henning ID, Adams MJ, Lester LF. Two-wavelength switching with a 1310nm-QDot DFB laser Proceedings of Spie - the International Society For Optical Engineering. 8619. DOI: 10.1117/12.2014250 |
0.488 |
|
| 2013 |
Raghunathan R, Mee JK, Crowley MT, Grillot F, Kovanis V, Lester LF. Modeling and characterization of pulse shape and pulse train dynamics in two-section passively mode-locked quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 8619. DOI: 10.1117/12.2005434 |
0.506 |
|
| 2013 |
Mee JK, Crowley MT, Raghunathan R, Murrell D, Lester LF. Characteristics of passively mode-locked quantum dot lasers from 20 to 120°C Proceedings of Spie - the International Society For Optical Engineering. 8619. DOI: 10.1117/12.2004567 |
0.515 |
|
| 2013 |
Lester LF, Grillot F, Naderi NA, Kovanis V. Differential gain enhancement in a quantum dash laser using strong optical injection Proceedings of Spie - the International Society For Optical Engineering. 8619. DOI: 10.1117/12.2004365 |
0.534 |
|
| 2013 |
Rahimi N, Aragon AA, Romero OS, Kim DM, Traynor NBJ, Rotter TJ, Balakrishnan G, Mukherjee SD, Lester LF. Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2003392 |
0.334 |
|
| 2013 |
Hurtado A, Mee J, Nami M, Lester LF, Henning ID, Adams MJ. Tunable microwave, millimeter-wave and THz signal generation with a 1310nm quantum dot laser 2013 Ieee International Topical Meeting On Microwave Photonics, Mwp 2013. 112-115. DOI: 10.1109/MWP.2013.6724032 |
0.421 |
|
| 2013 |
Mee JK, Crowley MT, Murrell D, Raghunathan R, Lester LF. Temperature performance of monolithic passively mode-locked quantum dot lasers: Experiments and analytical modeling Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2247571 |
0.529 |
|
| 2013 |
Hurtado A, Nami M, Henning ID, Adams MJ, Lester LF. Two-wavelength switching with a 1310-nm quantum dot distributed feedback laser Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2244570 |
0.551 |
|
| 2013 |
Raghunathan R, Crowley MT, Grillot F, Li Y, Mee JK, Kovanis V, Lester LF. Pulse characterization of passively mode-locked quantum-dot lasers using a delay differential equation model seeded with measured parameters Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2012.2230154 |
0.549 |
|
| 2013 |
Lester LF, Kovanis V, Sze-Chun Chan N, Miyamoto T, Sweeney SJ. Introduction to the issue on semiconductor lasers Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2009.2017337 |
0.422 |
|
| 2013 |
Hurtado A, Henning ID, Adams MJ, Lester LF. Generation of tunable millimeter-wave and THz signals with an optically injected quantum dot distributed feedback laser Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2267535 |
0.527 |
|
| 2013 |
Hurtado A, Henning ID, Adams MJ, Lester LF. Tunable millimeter-wave and THz signal generation with a 1310nm Quantum Dot Distributed-Feedback laser 2013 Ieee Photonics Conference, Ipc 2013. 77-78. DOI: 10.1109/IPCon.2013.6656377 |
0.41 |
|
| 2013 |
Hurtado A, Mee J, Nami M, Henning ID, Adams MJ, Lester LF. Analysis and applications of an optically-injected 1310 nm Quantum-Dot Distributed Feedback laser International Conference On Transparent Optical Networks. DOI: 10.1109/ICTON.2013.6602767 |
0.459 |
|
| 2013 |
Atmatzakis G, Murrell D, Christodoulou CG, Lester LF. A microwave antenna array with injection locked quantum dot laser sources Ieee Antennas and Propagation Society, Ap-S International Symposium (Digest). 1810-1811. DOI: 10.1109/APS.2013.6711564 |
0.399 |
|
| 2013 |
Hurtado A, Xu H, Wright JB, Liu S, Li Q, Wang GT, Luk TS, Figiel JJ, Cross K, Balakrishnan G, Lester LF, Brener I. Polarization switching in GaN nanowire lasers Applied Physics Letters. 103. DOI: 10.1063/1.4835115 |
0.375 |
|
| 2013 |
Hurtado A, Henning ID, Adams MJ, Lester LF. Dual-mode lasing in a 1310-nm quantum dot distributed feedback laser induced by single-beam optical injection Applied Physics Letters. 102. DOI: 10.1063/1.4807759 |
0.548 |
|
| 2013 |
Mee JK, Raghunathan R, Murrell D, Crowley MT, Lester LF. Expanded operational range in quantum dot passively mode-locked lasers with low unsaturated absorption Cleo: Science and Innovations, Cleo_si 2013. CTh4G.5. |
0.48 |
|
| 2013 |
Hurtado A, Mee J, Nami M, Henning ID, Adams MJ, Lester LF. Tunable microwave signal generation with an optically-injected 1310nm quantum dot distributed-feedback laser Cleo: Science and Innovations, Cleo_si 2013. CTh1G.6. |
0.452 |
|
| 2013 |
Raghunathan R, De Pinho E Braga A, Crowley MT, Mee JK, Lester LF. Dynamics of split-pulsing in a two-section passively mode locked quantum dot laser 2013 Conference On Lasers and Electro-Optics, Cleo 2013. |
0.456 |
|
| 2012 |
Li Q, Wright JB, Chow WW, Luk TS, Brener I, Lester LF, Wang GT. Single-mode GaN nanowire lasers. Optics Express. 20: 17873-9. PMID 23038337 DOI: 10.1364/Oe.20.017873 |
0.468 |
|
| 2012 |
Raghunathan R, Crowley MT, Grillot F, Mukherjee SD, Usechak NG, Kovanis V, Lester LF. Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra Proceedings of Spie - the International Society For Optical Engineering. 8255. DOI: 10.1117/12.910007 |
0.505 |
|
| 2012 |
Murrell D, Crowley MT, Breivik M, Raghunathan R, Aboketaf A, Elshaari A, Preble SF, Fimland BO, Lester LF. Design of uncooled high-bandwidth ultra-low energy per bit quantum dot laser transmitters for chip to chip optical interconnects 2012 Optical Interconnects Conference, Oic 2012. 72-73. DOI: 10.1109/OIC.2012.6224441 |
0.433 |
|
| 2012 |
Crowley MT, Kovanis V, Lester LF. Breakthroughs in semiconductor lasers Ieee Photonics Journal. 4: 565-569. DOI: 10.1109/Jphot.2012.2190499 |
0.547 |
|
| 2012 |
Hurtado A, Nami M, Henning ID, Adams MJ, Lester LF. Bistability and switching with very high contrast ratio in an optically-injected 1550nm-QDash Fabry-Perot laser Conference Digest - Ieee International Semiconductor Laser Conference. 112-113. DOI: 10.1109/ISLC.2012.6348354 |
0.309 |
|
| 2012 |
Mee JK, Crowley MT, Patel N, Murrell D, Raghunathan R, Aboketaf A, Elshaari A, Preble SF, Ampadu P, Lester LF. 110 °c operation of monolithic quantum dot passively mode-locked lasers Conference Digest - Ieee International Semiconductor Laser Conference. 68-69. DOI: 10.1109/ISLC.2012.6348338 |
0.468 |
|
| 2012 |
Atmatzakis G, Christodoulou CG, Murell D, Lester LF. RF power extraction from a quantum dot mode locked laser connected to an antenna Ieee Antennas and Propagation Society, Ap-S International Symposium (Digest). DOI: 10.1109/APS.2012.6349096 |
0.406 |
|
| 2012 |
Crowley MT, Patel N, Saiz TA, Emawy ME, Nilsen TA, Naderi NA, Mukherjee SD, Fimland BO, Lester LF. Modelling the spectral emission of multi-section quantum dot superluminescent light-emitting diodes Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/6/065011 |
0.428 |
|
| 2012 |
Xu H, Wright JB, Hurtado A, Li Q, Luk TS, Figiel JJ, Cross K, Balakrishnan G, Lester LF, Brener I, Wang GT. Gold substrate-induced single-mode lasing of GaN nanowires Applied Physics Letters. 101. DOI: 10.1063/1.4768300 |
0.384 |
|
| 2012 |
Hurtado A, Nami M, Henning ID, Adams MJ, Lester LF. Bistability patterns and nonlinear switching with very high contrast ratio in a 1550 nm quantum dash semiconductor laser Applied Physics Letters. 101. DOI: 10.1063/1.4761473 |
0.486 |
|
| 2012 |
Xu H, Wright JB, Luk TS, Figiel JJ, Cross K, Lester LF, Balakrishnan G, Wang GT, Brener I, Li Q. Single-mode lasing of GaN nanowire-pairs Applied Physics Letters. 101. DOI: 10.1063/1.4751862 |
0.363 |
|
| 2012 |
Mee JK, Crowley MT, Patel N, Murrell D, Raghunathan R, Aboketaf A, Elshaari A, Preble SF, Ampadu P, Lester LF. A passively mode-locked quantum-dot laser operating over a broad temperature range Applied Physics Letters. 101. DOI: 10.1063/1.4746266 |
0.47 |
|
| 2012 |
Crowley MT, Naderi NA, Su H, Grillot F, Lester LF. GaAs-Based Quantum Dot Lasers Semiconductors and Semimetals. 86: 371-417. DOI: 10.1016/B978-0-12-391066-0.00010-1 |
0.61 |
|
| 2012 |
Wright JB, Li Q, Brener I, Luk TS, Wang GT, Chow WW, Lester LF. Gallium nitride single-mode nanowire lasers 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.329 |
|
| 2011 |
Crowley MT, Patel N, Murrell D, Xin YC, Stintz A, Lester LF. Comparison of monolithic passively mode-locked lasers using In(Ga)As quantum dot or quantum well materials grown on GaAs substrates International Journal of High Speed Electronics and Systems. 20: 713-725. DOI: 10.1142/S0129156411007008 |
0.597 |
|
| 2011 |
Lin CY, Naderi NA, Li Y, Lester LF, Grillot F, Kim J, Christodoulou CG. Performance of a quantum dot passively mode-locked laser under optical feedback and temperature control International Journal of High Speed Electronics and Systems. 20: 679-685. DOI: 10.1142/S0129156411006969 |
0.571 |
|
| 2011 |
Usechak NG, Grupen M, Naderi N, Li Y, Lester LF, Kovanis V. Modulation effects in multi-section semiconductor lasers Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.876513 |
0.454 |
|
| 2011 |
Pochet M, Naderi NA, Kovanis V, Lester LF. Optical injection of quantum dash semiconductor lasers at 1550nm for tunable photonic oscillators Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.876464 |
0.544 |
|
| 2011 |
Crowley MT, Murrell D, Patel N, Breivik M, Lin CY, Li Y, Fimland BO, Lester LF. Modeling the temperature performance of monolithic passively mode-locked quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.875121 |
0.473 |
|
| 2011 |
Andrews JR, Restaino SR, Teare SW, Sharma YD, Jang WY, Vandervelde TE, Brown JS, Reisinger A, Sundaram M, Krishna S, Lester L. Comparison of quantum dots-in-a-double-well and quantum dots-in-a-well focal plane arrays in the long-wave infrared Ieee Transactions On Electron Devices. 58: 2022-2027. DOI: 10.1109/Ted.2011.2140374 |
0.503 |
|
| 2011 |
Li Y, Breivik M, Feng CY, Fimland BO, Lester LF. A low repetition rate all-active monolithic passively mode-locked quantum-dot laser Ieee Photonics Technology Letters. 23: 1019-1021. DOI: 10.1109/Photonics.2010.5698910 |
0.573 |
|
| 2011 |
Wright JB, Li QM, Luk TS, Brener I, Wang GT, Westlake KR, Lester LF. Single-mode lasing from top-down fabricated gallium nitride nanowires Ieee Photonic Society 24th Annual Meeting, Pho 2011. 529-530. DOI: 10.1109/Pho.2011.6110655 |
0.391 |
|
| 2011 |
Patel N, Crowley MT, Saiz TA, El-Emawy M, Nilsen TA, Naderi NA, Mukherjee SD, Fimland BO, Lester LF. Predicting the spectral shape of multi-section quantum dot superluminescent LEDs Ieee Photonic Society 24th Annual Meeting, Pho 2011. 451-452. DOI: 10.1109/Pho.2011.6110621 |
0.449 |
|
| 2011 |
Grillot F, Naderi NA, Wright JB, Rahimi N, Raghunathan R, Crowley MT, Lester LF. Dual-mode quantum dot laser operating in the excited state Ieee Photonic Society 24th Annual Meeting, Pho 2011. 165-166. DOI: 10.1109/PHO.2011.6110477 |
0.43 |
|
| 2011 |
Naderi NA, Grillot F, Kovanis V, Lester LF. Simultaneous low linewidth enhancement factor and high bandwidth quantum-dash injection-locked laser Ieee Photonic Society 24th Annual Meeting, Pho 2011. 115-116. DOI: 10.1109/Pho.2011.6110452 |
0.551 |
|
| 2011 |
Raghunathan R, Crowley MT, Grillot F, Kovanis V, Lester LF. Direct characterization of carrier relaxation in a passively mode-locked quantum dot laser Ieee Photonic Society 24th Annual Meeting, Pho 2011. 109-110. DOI: 10.1109/Pho.2011.6110449 |
0.581 |
|
| 2011 |
Li Y, Breivik M, Feng CY, Fimland BO, Lester LF. A low repetition rate all-active monolithic passively mode-locked quantum-dot laser Ieee Photonics Technology Letters. 23: 1019-1021. DOI: 10.1109/LPT.2011.2151281 |
0.472 |
|
| 2011 |
Lester LF, Kovanis V, Oreilly EP, Tohmori Y. Editorial: Introduction to the issue on semiconductor lasersPart 2 Ieee Journal On Selected Topics in Quantum Electronics. 17: 1468-1469. DOI: 10.1109/Jstqe.2011.2165654 |
0.347 |
|
| 2011 |
Lester LF, Kovanis V, Oreilly EP, Tohmori Y. Introduction to the issue on semiconductor lasersPart 1 Ieee Journal On Selected Topics in Quantum Electronics. 17: 1136-1137. DOI: 10.1109/Jstqe.2011.2160682 |
0.366 |
|
| 2011 |
Albrecht AR, Stintz A, Jaeckel FT, Rotter TJ, Ahirwar P, Patel VJ, Hains CP, Lester LF, Malloy KJ, Balakrishnan G. 1220-1280-nm optically pumped InAs quantum dot-based vertical external-cavity surface-emitting laser Ieee Journal On Selected Topics in Quantum Electronics. 17: 1787-1793. DOI: 10.1109/Jstqe.2011.2144958 |
0.513 |
|
| 2011 |
Lin CY, Grillot F, Li Y, Raghunathan R, Lester LF. Microwave characterization and stabilization of timing jitter in a quantum-dot passively mode-locked laser via external optical feedback Ieee Journal On Selected Topics in Quantum Electronics. 17: 1311-1317. DOI: 10.1109/Jstqe.2011.2118745 |
0.538 |
|
| 2011 |
Chen C, Wang Y, Djie HS, Ooi BS, Lester LF, Koch TL, Hwang JCM. Intrinsic dynamics of quantum-dash lasers Ieee Journal On Selected Topics in Quantum Electronics. 17: 1167-1174. DOI: 10.1109/Jstqe.2010.2103373 |
0.581 |
|
| 2011 |
Crowley MT, Murrell D, Patel N, Breivik M, Lin CY, Li Y, Fimland BO, Lester LF. Analytical modeling of the temperature performance of monolithic passively mode-locked quantum dot lasers Ieee Journal of Quantum Electronics. 47: 1059-1068. DOI: 10.1109/Jqe.2011.2157953 |
0.494 |
|
| 2011 |
Pochet MC, Naderi NA, Kovanis V, Lester LF. Modeling the dynamic response of an optically-injected nanostructure diode laser Ieee Journal of Quantum Electronics. 47: 827-833. DOI: 10.1109/Jqe.2011.2124445 |
0.49 |
|
| 2011 |
Grillot F, Naderi NA, Wright JB, Raghunathan R, Crowley MT, Lester LF. A dual-mode quantum dot laser operating in the excited state Applied Physics Letters. 99. DOI: 10.1063/1.3667193 |
0.537 |
|
| 2011 |
Lin CY, Grillot F, Naderi NA, Li Y, Kim JH, Christodoulou CG, Lester LF. RF linewidth of a monolithic quantum dot mode-locked laser under resonant feedback Iet Optoelectronics. 5: 105-109. DOI: 10.1049/Iet-Opt.2010.0039 |
0.542 |
|
| 2011 |
Li Y, Lin CY, Chang D, Langrock C, Fejer MM, Kane DJ, Lester LF. Pulse characterization of a passively mode-locked quantum dot semiconductor laser using FROG and autocorrelation Optics Infobase Conference Papers. |
0.487 |
|
| 2010 |
Naderi NA, Grillot F, Yang K, Wright JB, Gin A, Lester LF. Two-color multi-section quantum dot distributed feedback laser. Optics Express. 18: 27028-35. PMID 21196979 DOI: 10.1364/Oe.18.027028 |
0.544 |
|
| 2010 |
Lin CY, Grillot F, Li Y, Raghunathan R, Lester LF. Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser. Optics Express. 18: 21932-7. PMID 20941093 DOI: 10.1364/Oe.18.021932 |
0.525 |
|
| 2010 |
Li Y, Chiragh FL, Xin YC, Lin CY, Kim J, Christodoulou CG, Lester LF. Harmonic mode-locking using the double interval technique in quantum dot lasers. Optics Express. 18: 14637-43. PMID 20639949 DOI: 10.1364/Oe.18.014637 |
0.516 |
|
| 2010 |
Chen C, Ding G, Ooi BS, Lester LF, Helmy A, Koch TL, Hwang JC. Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering. Optics Express. 18: 6211-9. PMID 20389644 DOI: 10.1364/Oe.18.006211 |
0.498 |
|
| 2010 |
Yang K, El-Emawy MA, Gu TY, Stintz A, Lester LF. GaAs based InAs/InGaAs quantum dots-in-a-well solar cells and their concentration applications Materials Research Society Symposium Proceedings. 1211: 14-19. DOI: 10.1557/Proc-1211-R03-02 |
0.47 |
|
| 2010 |
Lester LF, Yang K, El-Emawy MA, Saiz T, Clark RA, Hollowell A, Lavrova O. Flexible solar cells for micro-autonomous systems technology Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.852598 |
0.396 |
|
| 2010 |
Lester LF, Kane DJ, Usechak NG, Lin CY, Li Y, Xin YC, Kovanis V. Pulse characteristics of passively mode-locked quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.843738 |
0.476 |
|
| 2010 |
Naderi NA, Pochet M, Kovanis V, Lester LF. Bandwidth enhancement in an injection-locked quantum dot laser operating at 1.31-μm Proceedings of Spie - the International Society For Optical Engineering. 7597. DOI: 10.1117/12.842284 |
0.479 |
|
| 2010 |
Pochet M, Naderi NA, Terry N, Kovanis V, Lester LF. Linewidth enhancement factor and dynamical response of an injection-locked quantum-dot Fabry-Perot laser at 1310nm Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.842161 |
0.456 |
|
| 2010 |
Usechak NG, Grupen M, Kovanis V, Naderi N, Li Y, Lester LF. Cavity-enhanced modulation in gain-lever semiconductor lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 523-524. DOI: 10.1109/Photonics.2010.5698991 |
0.487 |
|
| 2010 |
Naderi NA, Pochet MC, Grillot F, Shirkhorshidian A, Kovanis V, Lester LF. Manipulation of the linewidth enhancement factor in an injection-locked quantum-dash fabry-perot laser at 1550nm 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 427-428. DOI: 10.1109/Photonics.2010.5698942 |
0.56 |
|
| 2010 |
Grillot F, Naderi NA, Lin CY, Yang K, Gin A, Shirkhorshidian A, Lester LF. Two-color quantum-dot DFB laser for terahertz applications 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 365-366. DOI: 10.1109/Photonics.2010.5698911 |
0.571 |
|
| 2010 |
Lin CY, Grillot F, Li Y, Raghunathan R, Lester LF. Characterization of timing jitter in a quantum dot passively mode-locked laser at low offset frequency 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 361-362. DOI: 10.1109/Photonics.2010.5698909 |
0.554 |
|
| 2010 |
Kim JH, Lin CY, Li Y, Naderi N, Christodoulou CG, Lester LF. Beam steering of a linearly tapered slot antenna array integrated with quantum dot mode-locked lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 132-133. DOI: 10.1109/Photonics.2010.5698793 |
0.484 |
|
| 2010 |
Pochet M, Naderi NA, Li Y, Kovanis V, Lester LF. Tunable photonic oscillators using optically injected quantum-dash diode lasers Ieee Photonics Technology Letters. 22: 763-765. DOI: 10.1109/Lpt.2010.2044501 |
0.492 |
|
| 2010 |
Kim JH, Lin CY, Naderi NA, Xin YC, Lester LF, Christodoulou CG. Pattern estimation of a microstrip antenna integrated with a quantum-dot mode-locked laser Ieee Antennas and Wireless Propagation Letters. 9: 954-957. DOI: 10.1109/Lawp.2010.2087001 |
0.488 |
|
| 2010 |
Li Y, Naderi NA, Kovanis V, Lester LF. Enhancing the 3-dB bandwidth via the gain-lever effect in quantum-dot lasers Ieee Photonics Journal. 2: 321-329. DOI: 10.1109/Jphot.2010.2046481 |
0.577 |
|
| 2010 |
Lin CY, Grillot F, Naderi NA, Li Y, Lester LF. Rf linewidth reduction in a quantum dot passively mode-locked laser subject to external optical feedback Applied Physics Letters. 96. DOI: 10.1063/1.3299714 |
0.575 |
|
| 2010 |
Lin CY, Grillot F, Naderi NA, Li Y, Lester LF. Ultra-low RF linewidth in a quantum dot mode-locked laser under external optical feedback stabilization Optics Infobase Conference Papers. |
0.483 |
|
| 2010 |
Chen C, Ding G, Ooi BS, Lester LF, Helmy A, Koch TL, Hwang JCM. Modulation-bandwidth enhancement by stimulated raman scattering in quantum dash lasers Optics Infobase Conference Papers. |
0.389 |
|
| 2010 |
Pochet M, Naderi NA, Kovanis V, Lester LF. Optically injected quantum dash lasers at 1550nm employed as highly tunable photonic oscillators Optics Infobase Conference Papers. |
0.475 |
|
| 2010 |
Lester LF, Lin CY, Li Y, Kim JH, Christodoulou CG. Reconfigurable, multi-section quantum dot mode-locked lasers Optics Infobase Conference Papers. |
0.474 |
|
| 2009 |
Pochet M, Naderi NA, Terry N, Kovanis V, Lester LF. Dynamic behavior of an injection-locked quantum-dash Fabry-Perot laser at zero-detuning. Optics Express. 17: 20623-30. PMID 19997291 DOI: 10.1364/Oe.17.020623 |
0.553 |
|
| 2009 |
Lin CY, Xin YC, Li Y, Chiragh FL, Lester LF. Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers. Optics Express. 17: 19739-48. PMID 19997194 DOI: 10.1364/Oe.17.019739 |
0.542 |
|
| 2009 |
Pochet M, Naderi NA, Terry N, Kovanis V, Lester LF. Dynamic behavior of an injection-locked quantum-dash Fabry-Perot laser at zerodetuning Optics Express. 17: 20623-20630. DOI: 10.1364/OE.17.020623 |
0.415 |
|
| 2009 |
Lin CY, Xin YC, Li Y, Chiragh FL, Lester LF. Cavity design of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers Optics Infobase Conference Papers. DOI: 10.1364/Fio.2009.Fthk1 |
0.565 |
|
| 2009 |
Gu T, Yang K, El-Emawy MA, Stintz A, Lester LF. Resistance to Edge Recombination in InAs/InGaAs Quantum Dot Solar Cells Frontiers in Optics. DOI: 10.1364/Fio.2009.Fmb5 |
0.438 |
|
| 2009 |
Yang K, El-Emawy MA, Gu T, Stintz A, Lester LF. GaAs-Based InAs/InGaAs Quantum Dot Solar Cells for Concentration Applications Frontiers in Optics. DOI: 10.1364/Fio.2009.Fmb4 |
0.468 |
|
| 2009 |
Lin CY, Xin YC, Naderi NA, Chiragh FL, Lester LF. Monolithic 1.58-micron InAs/InP quantum dash passively modelocked lasers Proceedings of Spie - the International Society For Optical Engineering. 7211. DOI: 10.1117/12.809640 |
0.502 |
|
| 2009 |
Pochet M, Naderi NA, Grillot F, Terry N, Kovanis V, Lester LF. Modulation response of an injection locked quantum-dash fabry perot laser at 1550nm Proceedings of Spie - the International Society For Optical Engineering. 7211. DOI: 10.1117/12.809533 |
0.466 |
|
| 2009 |
Kim J, Christodoulou CG, Ku Z, Lin CY, Xin Y, Naderi NA, Lester LF. Hybrid integration of a bowtie slot antenna and a quantum dot mode-locked laser Ieee Antennas and Wireless Propagation Letters. 8: 1337-1340. DOI: 10.1109/Lawp.2009.2038345 |
0.474 |
|
| 2009 |
Naderi NA, Pochet M, Grillot F, Terry NB, Kovanis V, Lester LF. Modeling the injection-locked behavior of a quantum dash semiconductor laser Ieee Journal On Selected Topics in Quantum Electronics. 15: 563-571. DOI: 10.1109/Jstqe.2009.2015334 |
0.394 |
|
| 2009 |
Usechak NG, Xin Y, Lin CY, Lester LF, Kane DJ, Kovanis V. Modeling and direct electric-field measurements of passively mode-locked quantum-dot lasers Ieee Journal On Selected Topics in Quantum Electronics. 15: 653-660. DOI: 10.1109/Jstqe.2008.2012268 |
0.547 |
|
| 2009 |
Lin CY, Xin YC, Kim JH, Christodoulou CG, Lester LF. Compact optical generation of microwave signals using a monolithic quantum dot passively mode-locked laser Ieee Photonics Journal. 1: 236-244. DOI: 10.1109/Jphot.2009.2035523 |
0.58 |
|
| 2009 |
Naderi NA, Pochet M, Grillot F, Li Y, Lester LF. Temperature effects on the modulation response of an injection-locked InAs/InP quantum-dash laser Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 292-294. DOI: 10.1109/ICIPRM.2009.5012497 |
0.451 |
|
| 2009 |
Kim JH, Christodoulou CG, Ku Z, Lin CY, Naderi NA, Lester LF. A bowtie slot antenna coupled to a quantum-dot mode locked laser Ieee Antennas and Propagation Society, Ap-S International Symposium (Digest). DOI: 10.1109/APS.2009.5171652 |
0.417 |
|
| 2009 |
Tatebayashi J, Nuntawong N, Wong PS, Xin YC, Lester LF, Huffaker DL. Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/7/073002 |
0.428 |
|
| 2009 |
Gu T, El-Emawy MA, Yang K, Stintz A, Lester LF. Resistance to edge recombination in GaAs-based dots-in-a-well solar cells Applied Physics Letters. 95. DOI: 10.1063/1.3277149 |
0.425 |
|
| 2009 |
Grillot F, Lin CY, Naderi NA, Pochet M, Lester LF. Optical feedback instabilities in a monolithic InAs/GaAs quantum dot passively mode-locked laser Applied Physics Letters. 94. DOI: 10.1063/1.3114409 |
0.557 |
|
| 2009 |
Grillot F, Naderi NA, Pochet M, Lin CY, Besnard P, Lester LF. Tuning of the critical feedback level in 1.55-μm quantum dash semiconductor laser diodes Iet Optoelectronics. 3: 242-247. DOI: 10.1049/Iet-Opt.2009.0037 |
0.569 |
|
| 2009 |
Pochet M, Naderi NA, Grillot F, Terry N, Kovanis V, Lester LF. Methods for improved 3dB bandwidth in an injection-locked QDash fabry perot laser @ 1550nm Optics Infobase Conference Papers. |
0.315 |
|
| 2009 |
Grillot F, Lin CY, Naderi NA, Pochet M, Lester LF. Effects of optical feedback in InAs/GaAs monolithic quantum dot passively mode-locked lasers Optics Infobase Conference Papers. |
0.504 |
|
| 2009 |
Grillot F, Naderi NA, Pochet M, Lin CY, Lester LF. Influence of the linewidth enhancement factor on the critical feedback level in a quantum dash laser Optics Infobase Conference Papers. |
0.438 |
|
| 2009 |
Lin CY, Naderi NA, Chiragh F, Kim JH, Christodoulou CG, Lester LF, Xin YC. 31% DC to RF differential efficiency using monolithic quantum dot passively mode-locked lasers Optics Infobase Conference Papers. |
0.467 |
|
| 2009 |
Pochet M, Naderi NA, Terry N, Kovanis V, Lester LF. Operational behavior of an injection-locked quantum-dash fabry-perot laser at zero-detuning Optics Infobase Conference Papers. |
0.416 |
|
| 2008 |
Xin YC, Kane DJ, Kovanis V, Usechak NG, Lester LF. Frequency resolved optical gating characterization of a passively mode-locked quantum dot laser Optics Infobase Conference Papers. DOI: 10.1364/Fio.2008.Fths3 |
0.546 |
|
| 2008 |
Andrews JR, Restaino SR, Teare SW, Krishna S, Lester L, Wilcox CC, Martinez T, Santiago F. Precision radiometry using a tunable InAs/InGaAs quantum dot in a well infrared focal plane array Proceedings of Spie - the International Society For Optical Engineering. 7082. DOI: 10.1117/12.795599 |
0.435 |
|
| 2008 |
Lester LF, Terry NB, Moscho AJ, Fanto ML, Naderi NA, Li Y, Kovanis V. Giant nonlinear gain coefficient of an InAs/AlGaInAs quantum dot laser Proceedings of Spie - the International Society For Optical Engineering. 6889. DOI: 10.1117/12.767766 |
0.452 |
|
| 2008 |
Xin YC, Li Y, Kovanis V, Lester LF. Reconfigurable monolithic quantum dot passively mode-locked lasers Proceedings of Spie - the International Society For Optical Engineering. 6909. DOI: 10.1117/12.767328 |
0.493 |
|
| 2008 |
Grillot F, Naderi NA, Pochet M, Lin CY, Lester LF. Variation of the critical feedback level in a 1550nm quantum-dash fabry-perot semiconductor laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 677-678. DOI: 10.1109/LEOS.2008.4688800 |
0.475 |
|
| 2008 |
Grillot F, Martinez A, Merghem K, Provost JG, Alexandre F, Piron R, Dehaese O, Loualiche S, Lester LF, Ramdane A. Stable above-threshold linewidth enhancement factor in a 1.52-μm InAs/InP (311B) quantum dot laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 535-536. DOI: 10.1109/LEOS.2008.4688728 |
0.465 |
|
| 2008 |
Naderi NA, Pochet M, Grillot F, Terry N, Kovanis V, Lester LF. Extraction of operating parameters from an injection-locked quantum-dash fabry-perot laser at 1.55μm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 475-476. DOI: 10.1109/LEOS.2008.4688697 |
0.414 |
|
| 2008 |
Grillot F, Dagens B, Provost JG, Su H, Lester LF. Gain compression and above-threshold linewidth enhancement factor in 1.3-μm InAs-GaAs quantum-dot lasers Ieee Journal of Quantum Electronics. 44: 946-951. DOI: 10.1109/Jqe.2008.2003106 |
0.561 |
|
| 2008 |
Usechak NG, Xin Y, Lester LF, Kane DJ, Kovanis V. Modeling and direct electric-field measurements of passively mode-locked quantum-dot lasers 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551394 |
0.439 |
|
| 2008 |
Kim JH, Christodoulou CG, Ku Z, Xin YC, Naderi NA, Lester LF. Quantum-dot laser coupled bowtie antenna 2008 Ieee International Symposium On Antennas and Propagation and Usnc/Ursi National Radio Science Meeting, Apsursi. DOI: 10.1109/APS.2008.4618975 |
0.412 |
|
| 2008 |
Grillot F, Naderi NA, Pochet M, Lin CY, Lester LF. Variation of the feedback sensitivity in a 1.55 μm InAs/InP quantum-dash Fabry-Perot semiconductor laser Applied Physics Letters. 93. DOI: 10.1063/1.2998397 |
0.576 |
|
| 2008 |
Xin YC, Kane DJ, Lester LF. Frequency-resolved optical gating characterisation of passively modelocked quantum-dot laser Electronics Letters. 44: 1255-1257. DOI: 10.1049/El:20081810 |
0.531 |
|
| 2008 |
Terry NB, Naderi NA, Pochet M, Moscho AJ, Lester LF, Kovanis V. Bandwidth enhancement of injection-locked 1.3 μm quantum-dot DFB laser Electronics Letters. 44: 904-905. DOI: 10.1049/El:20080732 |
0.565 |
|
| 2008 |
Xin YC, Lin CY, Li Y, Bae HP, Yuen HB, Wistey MA, Harris JS, Bank SR, Lester LF. Monolithic 1.55m GaInNAsSb quantum well passively modelocked lasers Electronics Letters. 44: 581-582. DOI: 10.1049/El:20080362 |
0.574 |
|
| 2007 |
Xin YC, Li Y, Kovanis V, Gray AL, Zhang L, Lester LF. Reconfigurable quantum dot monolithic multisection passive mode-locked lasers. Optics Express. 15: 7623-33. PMID 19547089 DOI: 10.1364/Oe.15.007623 |
0.566 |
|
| 2007 |
Brown K, Fanto M, Murrell D, Kovanis V, Xin YC, Lester LF. Automated analysis of stable operation in two-section quantum dot passively mode locked lasers Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.710845 |
0.456 |
|
| 2007 |
Xin YC, Stintz A, Cao H, Zhang L, Gray AL, Bank SR, Osinski M, Harris J, Lester LF. Monolithic passively mode-locked lasers using quantum dot or quantum well materials grown on GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.705662 |
0.488 |
|
| 2007 |
Li Y, Naderi NA, Xin YC, Dziak C, Lester LF. Multi-section gain-lever quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 6468. DOI: 10.1117/12.705566 |
0.477 |
|
| 2007 |
Xin YC, Martinez A, Saiz T, Moscho AJ, Li Y, Nilsen TA, Gray AL, Lester LF. 1.3-μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth Ieee Photonics Technology Letters. 19: 501-503. DOI: 10.1109/Lpt.2007.893567 |
0.526 |
|
| 2007 |
Li Y, Naderi NA, Kovanis V, Lester LF. Modulation response of an injection-locked 1550 nm quantum dash semiconductor laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 498-499. DOI: 10.1109/LEOS.2007.4382497 |
0.474 |
|
| 2007 |
Dziak C, Moseho AJ, Li Y, Fanto M, Kovanis V, Malowicki J, Lester LF. Measurement of the linewidth enhancement factor of a 1550-nm injection-locked quantum dash laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 433-434. DOI: 10.1109/LEOS.2007.4382464 |
0.458 |
|
| 2007 |
Xin YC, Kovanis V, Li Y, Gray AL, Zhang L, Lester LF. 1.3-μm quantum dot monolithic multi-section passively mode-locked lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 872-873. DOI: 10.1109/LEOS.2006.279084 |
0.489 |
|
| 2007 |
Naderi NA, Li Y, Dziak C, Xin YC, Kovanis V, Lester LF. Quantum dot gain-lever laser diode Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 52-53. DOI: 10.1109/LEOS.2006.278832 |
0.5 |
|
| 2007 |
Xin YC, Lester LF, Bank SR, Bae HP, Yuen HB, Wistey MA, Harris JS. Monolithic 1.55-μm GaInNAsSb quantum well mode-locked lasers Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453175 |
0.481 |
|
| 2007 |
Withers N, Cao H, Smolyakov GA, Gray AL, Lester LF, Osiński M. Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with high unidirectionality Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452597 |
0.447 |
|
| 2007 |
Xin YC, Lester LF, Gray AL, Zhang L. Characterization of the static and dynamic parameters in a 1.3-μm quantum dot mode-locked laser Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452593 |
0.457 |
|
| 2007 |
Li Y, Naderi NA, Xin YC, Kovanis V, Lester LF. Two-section quantum dot lasers with 20-dB modulation efficiency improvement Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4452591 |
0.464 |
|
| 2007 |
Laghumavarapu RB, El-Emawy M, Nuntawong N, Moscho A, Lester LF, Huffaker DL. Improved device performance of InAsGaAs quantum dot solar cells with GaP strain compensation layers Applied Physics Letters. 91. DOI: 10.1063/1.2816904 |
0.75 |
|
| 2007 |
Martinez A, Yan L, Lester LF, Gray AL. Microwave frequency characterization of undoped and p-doped quantum dot lasers Applied Physics Letters. 90. DOI: 10.1063/1.2749432 |
0.526 |
|
| 2007 |
Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL. GaSbGaAs type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters. 90. DOI: 10.1063/1.2734492 |
0.744 |
|
| 2006 |
Xin Y-, Martinez A, Saiz T, Nilsen TA, Moscho A, Li Y, Gray AL, Vahktin A, Lester LF. Novel Quantum Dot 3-section Super-luminescent Diode The Japan Society of Applied Physics. 2006: 274-275. DOI: 10.7567/Ssdm.2006.B-6-3 |
0.479 |
|
| 2006 |
Cao H, Gray AL, Lester LF, Osiński M. Monolithically integrated twin ring diode lasers with quantum-dot active region Proceedings of Spie - the International Society For Optical Engineering. 6115. DOI: 10.1117/12.661401 |
0.446 |
|
| 2006 |
Nuntawong N, Tatebayashi J, Wong PS, Xin YC, Hains CP, Huang S, Lester LF, Huffaker DL. Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 6129. DOI: 10.1117/12.656492 |
0.344 |
|
| 2006 |
Xin YC, Li Y, Martinez A, Rotter TJ, Su H, Zhang L, Gray AL, Luong S, Sun K, Zou Z, Zilko J, Varangis PM, Lester LF. Optical gain and absorption of quantum dots measured using an alternative segmented contact method Ieee Journal of Quantum Electronics. 42: 725-732. DOI: 10.1109/Jqe.2006.876709 |
0.479 |
|
| 2006 |
Xin YC, Martinez A, Nilsen TA, Moscho A, Li Y, Gray AL, Lester LF. 1.3 μm quantum dot multi-section super-luminescent diode with extremely broad bandwidth (> 150 nm) Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628336 |
0.403 |
|
| 2006 |
Li Y, Rotter TJ, Xin YC, Stinz A, Martinez A, Malloy KJ, Patterson S, Lester LF. High characteristic temperature of p-doped InAs quantum dots-in-a-well lasers on InP substrate Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628110 |
0.45 |
|
| 2006 |
Martinez A, Li Y, Lester LF, Gray AL. Microwave frequency characterization of undoped and p-doped quantum dot lasers emitting at 1.24 μm Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628108 |
0.459 |
|
| 2006 |
Cao H, Gray AL, Smolyakov GA, Lester LF, Eliseev PG, Osiński M. Microwave frequency beating between integrated quantum-dot ring lasers Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627998 |
0.438 |
|
| 2006 |
Tatebayashi J, Nuntawong N, Xin YC, Wong PS, Huang SH, Hains CP, Lester LF, Huffaker DL. Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition Applied Physics Letters. 88. DOI: 10.1063/1.2208553 |
0.476 |
|
| 2006 |
Huffaker DL, Hains CP, Nuntawong N, Xin YC, Wong PS, Xue L, Brueck SRJ, Lester L. Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2165415 |
0.436 |
|
| 2006 |
Tatebayashi J, Nuntawong N, Xin YC, Wong PS, Huang S, Hains CP, Lester LF, Huffaker DL. Low threshold current operation of stacked InAs/GaAs quantum dot lasers with GaP strain-compensation layers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 108-111. |
0.45 |
|
| 2006 |
Cao H, Deng H, Ling H, Liu C, Smagley VA, Caldwell RB, Smolyakov GA, Gray AL, Lester LF, Eliseev PG, Osiński M. Unidirectional operation of quantum-dot ring lasers Optics Infobase Conference Papers. |
0.427 |
|
| 2005 |
Xin Y-, Stintz A, Cao H, Osinski M, Lester LF. High Temperature Operation (>100℃) of InGaAs/GaAs All-Active Monolithic Passively-Mode-Locked Single Quantum Well Lasers The Japan Society of Applied Physics. 2005: 356-357. DOI: 10.7567/Ssdm.2005.E-6-4L |
0.543 |
|
| 2005 |
Vaughn LG, Dawson LR, Pease EA, Lester LF, Xu H, Jiang Y, Gray AL. Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells Proceedings of Spie - the International Society For Optical Engineering. 5722: 307-318. DOI: 10.1117/12.606226 |
0.357 |
|
| 2005 |
Li Y, Xin YC, Su H, Lester LF, Gray AL, Luong S, Sun K, Zou Z, Zilko J. Photoluminescence characterization of quantum dot laser epitaxy Proceedings of Spie - the International Society For Optical Engineering. 5734: 138-145. DOI: 10.1117/12.597089 |
0.477 |
|
| 2005 |
Xin YC, Su H, Lester LF, Zhang L, Gray AL, Luong S, Sun K, Zou Z, Whittington T, Zilko J, Varangis PM. Determination of optical gain and absorption of quantum dots with an improved segmented contact method Proceedings of Spie - the International Society For Optical Engineering. 5722: 49-59. DOI: 10.1117/12.591241 |
0.307 |
|
| 2005 |
Su H, Zhang L, Gray AL, Wang R, Varangis PM, Lester LF. Gain compression coefficient and above-threshold linewidth enhancement factor in InAs/GaAs quantum dot DFB lasers Proceedings of Spie - the International Society For Optical Engineering. 5722: 72-79. DOI: 10.1117/12.591105 |
0.421 |
|
| 2005 |
Su H, Li H, Zhang L, Zou Z, Gray AL, Wang R, Varangis PM, Lester LF. Nondegenerate four-wave mixing in quantum dot distributed feedback lasers Ieee Photonics Technology Letters. 17: 1686-1688. DOI: 10.1109/Lpt.2005.851052 |
0.529 |
|
| 2005 |
Su H, Lester LF. Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp Journal of Physics D: Applied Physics. 38: 2112-2118. DOI: 10.1088/0022-3727/38/13/006 |
0.556 |
|
| 2005 |
Cao H, Deng H, Ling H, Liu C, Smagley VA, Caldwell RB, Smolyakov GA, Gray AL, Lester LF, Eliseev PG, Osiński M. Highly unidirectional InAsInGaAsGaAs quantum-dot ring lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1931044 |
0.57 |
|
| 2005 |
Lutti J, Smowton PM, Lewis GM, Krysa AB, Roberts JS, Houston PA, Xin YC, Li Y, Lester LF. 740 nm InP/GaInP quantum-dot laser with 190 a cm-2 room temperature threshold current density Electronics Letters. 41: 247-248. DOI: 10.1049/El:20057201 |
0.575 |
|
| 2004 |
Lester LF. Quantum dot lasers and their applications Frontiers in Optics. DOI: 10.1364/Fio.2004.Fmn2 |
0.559 |
|
| 2004 |
Su H, Zhang L, Wang R, Newell TC, Gray AL, Lester LF. Linewidth study of InAs-InGaAs quantum dot distributed feedback lasers Ieee Photonics Technology Letters. 16: 2206-2208. DOI: 10.1109/Lpt.2004.834547 |
0.595 |
|
| 2004 |
Osborne S, Blood P, Smowton P, Lutti J, Xin YC, Stintz A, Huffaker D, Lester LF. State filling in InAs quantum-dot laser structures Ieee Journal of Quantum Electronics. 40: 1639-1645. DOI: 10.1109/Jqe.2004.837331 |
0.399 |
|
| 2004 |
Osborne SW, Blood P, Smowton PM, Xin YC, Stintz A, Huffaker D, Lester LF. Optical absorption cross section of quantum dots Journal of Physics: Condensed Matter. 16: S3749-S3756. DOI: 10.1088/0953-8984/16/35/016 |
0.341 |
|
| 2003 |
Su H, Zhang L, Gray AL, Wang R, Newell TC, Malloy KJ, Lester LF. High external feedback resistance of laterally loss-coupled distributed feedback quantum dot semiconductor lasers Ieee Photonics Technology Letters. 15: 1504-1506. DOI: 10.1109/Lpt.2003.818627 |
0.53 |
|
| 2003 |
Bakonyi Z, Su H, Onishchukov G, Lester LF, Gray AL, Newell TC, Tünnermann A. High-Gain Quantum-Dot Semiconductor Optical Amplifier for 1300 nm Ieee Journal of Quantum Electronics. 39: 1409-1414. DOI: 10.1109/Jqe.2003.818306 |
0.478 |
|
| 2003 |
Bakonyi Z, Onishchukov G, Tunnermann A, Su H, Lester LF, Gray AL, Newell TC. Quantum dot (InAs/InGaAs DWELL) semiconductor optical amplifier Conference On Lasers and Electro-Optics Europe - Technical Digest. 174. DOI: 10.1109/CLEOE.2003.1312235 |
0.447 |
|
| 2003 |
Xin YC, Vaughn LG, Dawson LR, Stintz A, Lin Y, Lester LF, Huffaker DL. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers Journal of Applied Physics. 94: 2133-2135. DOI: 10.1063/1.1582229 |
0.542 |
|
| 2003 |
Pease EA, Dawson LR, Vaughn LG, Rotella P, Lester LF. 2.5-3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AllnSb metamorphic buffer layers Journal of Applied Physics. 93: 3177-3181. DOI: 10.1063/1.1544425 |
0.543 |
|
| 2002 |
Vaughn LG, Ralph L, Xu H, Jiang Y, Lester LF. Characterization of AlInAsSb and AlGaInAsSb MBE-grown Digital Alloys Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M7.2 |
0.301 |
|
| 2002 |
Yarotski DA, Averitt RD, Negre N, Crooker SA, Taylor AJ, Donati GP, Stintz A, Lester LF, Malloy KJ. Ultrafast carrier-relaxation dynamics in self-assembled InAs/GaAs quantum dots Journal of the Optical Society of America B. 19: 1480. DOI: 10.1364/Josab.19.001480 |
0.458 |
|
| 2002 |
Ukhanov AA, Wang RH, Rotter TJ, Stintz A, Lester LF, Eliseev PG, Malloy KJ. Orientation dependence of the optical properties in InAs quantum-dash lasers on InP Applied Physics Letters. 81: 981-983. DOI: 10.1063/1.1498875 |
0.579 |
|
| 2001 |
Stann BL, Abou-Auf A, Frankel S, Giza MM, Potter W, Ruff WC, Shen PH, Simon DR, Stead MR, Sztankay ZG, Lester LF. Research progess on scannerless ladar systems using a laser diode transmitter and FM/cw radar principles Proceedings of Spie. 4377: 12-22. DOI: 10.1117/12.440102 |
0.361 |
|
| 2001 |
Wang RH, Stintz A, Varangis PM, Newell TC, Li H, Malloy KJ, Lester LF. Room-temperature operation of InAs quantum-dash lasers on InP [001] Ieee Photonics Technology Letters. 13: 767-769. DOI: 10.1109/68.935797 |
0.568 |
|
| 2001 |
Eliseev PG, Li H, Liu T, Newell TC, Lester LF, Malloy KJ. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers Ieee Journal of Selected Topics in Quantum Electronics. 7: 135-142. DOI: 10.1109/2944.954121 |
0.46 |
|
| 2001 |
Qiu Y, Gogna P, Forouhar S, Stintz A, Lester LF. High-performance InAs quantum-dot lasers near 1.3 μm Applied Physics Letters. 79: 3570-3572. DOI: 10.1063/1.1421428 |
0.558 |
|
| 2001 |
Huang X, Stintz A, Li H, Lester LF, Cheng J, Malloy KJ. Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers Applied Physics Letters. 78: 2825-2827. DOI: 10.1063/1.1371244 |
0.556 |
|
| 2000 |
Zhang L, Lester LF, Baca AG, Shul RJ, Chang PC, Willison CG, Mishra UK, Denbaars SP, Zolper JC. Fabrication and Characterization of GaN Junctionfield Effect Transistors Mrs Internet Journal of Nitride Semiconductor Research. 5: 376-383. DOI: 10.1557/S1092578300004531 |
0.328 |
|
| 2000 |
Gray AL, Dawson LR, Lin Y, Stintz A, Xin Y-, Garza AA, Lester LF. InAs Quantum Dots Grown on an AlGaAsSb Strain-Relief Buffer Mrs Proceedings. 642. DOI: 10.1557/Proc-642-J3.22.1 |
0.451 |
|
| 2000 |
Li H, Liu GT, Varangis PM, Newell TC, Stintz A, Fuchs B, Malloy KJ, Lester LF. 150-nm tuning range in a grating-coupled external cavity quantum-dot laser Ieee Photonics Technology Letters. 12: 759-761. DOI: 10.1109/68.853491 |
0.519 |
|
| 2000 |
Stintz A, Liu GT, Li H, Lester LF, Malloy KJ. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure Ieee Photonics Technology Letters. 12: 591-593. DOI: 10.1109/68.849053 |
0.573 |
|
| 2000 |
Liu GT, Stintz A, Pease EA, Newell TC, Malloy KJ, Lester LF. 1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers Ieee Photonics Technology Letters. 12: 4-6. DOI: 10.1109/68.817428 |
0.518 |
|
| 2000 |
Liu GT, Stintz A, Li H, Newell TC, Gray AL, Varangis PM, Malloy KJ, Lester LF. Influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures Ieee Journal of Quantum Electronics. 36: 1272-1279. DOI: 10.1109/3.890268 |
0.588 |
|
| 2000 |
Eliseev P, Li H, Stintz A, Liu GT, Newell TC, Malloy KJ, Lester LF. Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode Ieee Journal of Quantum Electronics. 36: 479-485. DOI: 10.1109/3.831026 |
0.559 |
|
| 2000 |
Zhang L, Lester LF, Baca AG, Shul RJ, Chang PC, Willison CG, Mishra UK, Denbaars SP, Zolper JC. Epitaxially-grown GaN junction field effect transistors Ieee Transactions On Electron Devices. 47: 507-511. DOI: 10.1109/16.824716 |
0.33 |
|
| 2000 |
Eliseev PG, Li H, Stintz A, Liu GT, Newell TC, Malloy KJ, Lester LF. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes Applied Physics Letters. 77: 262-264. DOI: 10.1063/1.126944 |
0.55 |
|
| 2000 |
Varangis PM, Li H, Liu GT, Newell TC, Stintz A, Fuchs B, Malloy KJ, Lester LF. Low-threshold quantum dot lasers with 201 nm tuning range Electronics Letters. 36: 1544-1545. DOI: 10.1049/El:20001080 |
0.588 |
|
| 2000 |
Newell T, Varangis P, Pease E, Stintz A, Liu G, Malloy K, Lester L. High-power AlGaInAs strained multiquantum well lasers operating at 1.52 [micro sign]m Electronics Letters. 36: 955. DOI: 10.1049/El:20000731 |
0.418 |
|
| 1999 |
Gutierrez A, Dorn P, Zeller J, King D, Lester LF, Rudolph W, Sheik-Bahae M. Autocorrelation measurement of femtosecond laser pulses by use of a ZnSe two-photon detector array. Optics Letters. 24: 1175-7. PMID 18073977 DOI: 10.1364/Ol.24.001175 |
0.422 |
|
| 1999 |
Zhang L, Lester LF, Baca AG, Shul RJ, Chang PC, Willison CG, Mishra UK, Denbaars SP, Zolper JC. Fabrication and Characterization of GaN Junctionfield Effect Transistors Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W4.9 |
0.328 |
|
| 1999 |
Vaughn LG, Newell TC, Lester LF, Macinnes AN. Characterization of GaS-Passivated Quantum-Well Laser Diodes Mrs Proceedings. 573: 125. DOI: 10.1557/Proc-573-125 |
0.526 |
|
| 1999 |
Newell TC, Bossert DJ, Stintz A, Fuchs B, Malloy KJ, Lester LF. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes Ieee Photonics Technology Letters. 11: 1527-1529. DOI: 10.1109/68.806834 |
0.602 |
|
| 1999 |
Lester LF, Stintz A, Li H, Newell TC, Pease EA, Fuchs BA, Malloy KJ. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes Ieee Photonics Technology Letters. 11: 931-933. DOI: 10.1109/68.775303 |
0.604 |
|
| 1999 |
Newell T, Wu X, Gray AL, Dorato S, Lee H, Lester LF. The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers Ieee Photonics Technology Letters. 11: 30-32. DOI: 10.1109/68.736380 |
0.523 |
|
| 1999 |
Newell TC, Wright MW, Hou H, Lester LF. Carrier distribution, spontaneous emission and gain engineering in lasers with nonidentical quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 5: 620-626. DOI: 10.1109/2944.788426 |
0.538 |
|
| 1999 |
Gray AL, Newell TC, Lester LF, Lee H. High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure Journal of Applied Physics. 85: 7664-7670. DOI: 10.1063/1.370569 |
0.481 |
|
| 1999 |
Liu G, Stintz A, Li H, Malloy K, Lester L. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well Electronics Letters. 35: 1163. DOI: 10.1049/El:19990811 |
0.563 |
|
| 1998 |
Newell TC, Lester LF, Wu X, Zhang Y, Gray AL. Gain and threshold current density characteristics of 2 micron GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset Proceedings of Spie - the International Society For Optical Engineering. 3284: 258-267. DOI: 10.1117/12.304452 |
0.518 |
|
| 1998 |
Varangis P, Gavrielides A, Kovanis V, Erneux T, Lester L. All-optical double-sideband suppressed-carrier modulation of semiconductor lasers Journal of Applied Physics. 83: 8071-8073. DOI: 10.1063/1.367903 |
0.463 |
|
| 1998 |
Varangis PM, Gavrielides A, Kovanis V, Lester LF. Linewidth broadening across a dynamical instability Physics Letters A. 250: 117-122. DOI: 10.1016/S0375-9601(98)00830-5 |
0.393 |
|
| 1997 |
Rudolph W, Sheik-Bahae M, Bernstein A, Lester LF. Femtosecond autocorrelation measurements based on two-photon photoconductivity in ZnSe. Optics Letters. 22: 313-5. PMID 18183186 DOI: 10.1364/Ol.22.000313 |
0.45 |
|
| 1997 |
Gingrich HS, Chumney DR, Sun SZ, Hersee SD, Lester LF, Brueck SRJ. Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells Ieee Photonics Technology Letters. 9: 155-157. DOI: 10.1109/68.553070 |
0.543 |
|
| 1997 |
Varangis P, Gavrielides A, Erneux T, Kovanis V, Lester L. Frequency entrainment in optically injected semiconductor lasers Physical Review Letters. 78: 2353-2356. DOI: 10.1103/Physrevlett.78.2353 |
0.425 |
|
| 1995 |
Zhang L, Ramer J, Brown J, Zheng K, Lester LF, Hersee SD. Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen Mrs Proceedings. 395: 763. DOI: 10.1557/Proc-395-763 |
0.336 |
|
| 1993 |
Lester LF, Hwang KC, Ho P, Mazurowski J, Ballingall JM, Sutliff J, Gupta S, Whitaker J, Williamson SL. Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs Ieee Photonics Technology Letters. 5: 511-514. DOI: 10.1109/68.215265 |
0.401 |
|
| 1993 |
Ballingall JM, Ho P, Mazurowski J, Lester L, Hwang KC, Sutliff J, Gupta S, Whitaker J. In x Ga 1-x As (x=0.25–0.35) grown at low temperature Journal of Electronic Materials. 22: 1471-1475. DOI: 10.1007/Bf02650001 |
0.341 |
|
| 1993 |
Gupta S, Whitaker JF, Williamson SL, Mourou GA, Lester L, Hwang KC, Ho P, Mazurowski J, Ballingall JM. High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy Journal of Electronic Materials. 22: 1449-1455. DOI: 10.1007/Bf02649997 |
0.353 |
|
| 1992 |
O'Keefe SS, Lester LF, Teng D, Schaff WJ, Eastman LF. Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers Proceedings of Spie. 1703: 294-303. DOI: 10.1117/12.138396 |
0.592 |
|
| 1992 |
Lester LF, O'Keefe SS, Schaff WJ, Eastman LF. Modulation characteristics of short-cavity strained-layer lasers Semiconductors. 1680: 92-100. DOI: 10.1117/12.137704 |
0.554 |
|
| 1992 |
Lester LF, Ridley BK. Hot carriers and the frequency response of quantum well lasers Journal of Applied Physics. 72: 2579-2588. DOI: 10.1063/1.351557 |
0.435 |
|
| 1992 |
Lester LF, O'Keefe SS, Schaff WJ, Eastman LF. Multiquantum well strained-layer lasers with improved low frequency response and very low damping Electronics Letters. 28: 383-385. DOI: 10.1049/El:19920240 |
0.425 |
|
| 1991 |
Lester LF, Schaff WJ, Offsey SD, Eastman LF. High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching Ieee Photonics Technology Letters. 3: 403-405. DOI: 10.1109/68.93859 |
0.522 |
|
| 1991 |
Lester LF, Schaff WJ, Song X, Eastman LF. Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers Ieee Photonics Technology Letters. 3: 1049-1051. DOI: 10.1109/68.117996 |
0.532 |
|
| 1991 |
Offsey SD, Schaff WJ, Lester LF, Eastman LF, McKernan SK. Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation Ieee Journal of Quantum Electronics. 27: 1455-1462. DOI: 10.1109/3.89963 |
0.58 |
|
| 1991 |
Lester LF, Offsey SD, Ridley BK, Schaff WJ, Foreman BA, Eastman LF. Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers Applied Physics Letters. 59: 1162-1164. DOI: 10.1063/1.105543 |
0.526 |
|
| 1991 |
Offsey SD, Lester LF, Schaff WJ, Eastman LF. High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers Applied Physics Letters. 58: 2336-2338. DOI: 10.1063/1.104914 |
0.581 |
|
| 1990 |
Offsey SD, Schaff WJ, Lester LF, Eastman LF. Single and Multiple Quantum Well Strained Layer InGaAs-GaAs-AlGaAs Lasers Grown by Molecular Beam Epitaxy The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1990.D-4-2 |
0.498 |
|
| 1989 |
Lester LF, Kao M-, Ho P, Ferguson DW, Smith RP, Smith PM, Ballingall JM. High-efficiency 0.25- mu m gate-length pseudomorphic power heterostructure FETs at millimeter-wave frequencies Ieee Transactions On Electron Devices. 36: 2616-2617. DOI: 10.1109/16.43730 |
0.325 |
|
| 1987 |
Chao PC, Duh KHG, Smith PM, Ballingall JM, Lester LF, Lee BR, Jabra A, Gifford GG, Tiberio RC. 0.1 - μ m Gate-Length Pseudomorphic HEMT's Ieee Electron Device Letters. 8: 489-491. DOI: 10.1109/Edl.1987.26704 |
0.335 |
|
| 1986 |
Henderson T, Aksun M, Peng C, Morkoc H, Chao P, Smith P, Duh K, Lester L. Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor Ieee Electron Device Letters. 7: 649-651. DOI: 10.1109/Edl.1986.26507 |
0.309 |
|
| 1986 |
Aksun MI, Morkoç H, Lester LF, Duh KHG, Smith PM, Chao PC, Longerbone M, Erickson LP. Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates Applied Physics Letters. 49: 1654-1655. DOI: 10.1063/1.97257 |
0.383 |
|
| 1986 |
Smith PM, Chao PC, Duh KHG, Lester LF, Lee BR. 94 GHz transistor amplification using an HEMT Electronics Letters. 22: 780-781. DOI: 10.1049/El:19860535 |
0.317 |
|
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