| Year |
Citation |
Score |
| 2024 |
Laryn T, Chu RJ, Kim Y, Madarang MA, Lung QND, Ahn DH, Han JH, Choi WJ, Jung D. Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III-V Quantum Dot Lasers on a Si Substrate. Acs Applied Materials & Interfaces. PMID 38828941 DOI: 10.1021/acsami.4c04597 |
0.422 |
|
| 2024 |
Chu RJ, Laryn T, Ahn DH, Han JH, Kim H, Choi WJ, Jung D. Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth. Optics Express. 32: 1334-1341. PMID 38297688 DOI: 10.1364/OE.509243 |
0.352 |
|
| 2024 |
Hughes ET, Shang C, Selvidge J, Jung D, Wan Y, Herrick RW, Bowers JE, Mukherjee K. Gradual degradation in InAs quantum dot lasers on Si and GaAs. Nanoscale. 16: 2966-2973. PMID 38251961 DOI: 10.1039/d3nr05311c |
0.402 |
|
| 2023 |
Yeon E, Woo S, Chu RJ, Lee IH, Jang HW, Jung D, Choi WJ. Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes. Acs Applied Materials & Interfaces. PMID 37978916 DOI: 10.1021/acsami.3c10979 |
0.352 |
|
| 2023 |
Lung QND, Chu RJ, Kim Y, Laryn T, Madarang MA, Kovalchuk O, Song YW, Lee IH, Choi C, Choi WJ, Jung D. Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer. Nano Letters. PMID 37027572 DOI: 10.1021/acs.nanolett.3c00321 |
0.372 |
|
| 2022 |
Kim Y, Chu RJ, Ryu G, Woo S, Lung QND, Ahn DH, Han JH, Choi WJ, Jung D. Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission. Acs Applied Materials & Interfaces. PMID 36162121 DOI: 10.1021/acsami.2c14492 |
0.438 |
|
| 2021 |
Buffolo M, Rovere L, De Santi C, Jung D, Norman J, Bowers JE, Herrick RW, Meneghesso G, Zanoni E, Meneghini M. Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers Ieee Journal of Quantum Electronics. 57: 1-8. DOI: 10.1109/JQE.2020.3033041 |
0.395 |
|
| 2020 |
Hong N, Chu RJ, Kang SS, Ryu G, Han JH, Yu KJ, Jung D, Choi WJ. Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform. Optics Express. 28: 36559-36567. PMID 33379747 DOI: 10.1364/OE.410385 |
0.323 |
|
| 2020 |
Duan J, Zhou Y, Dong B, Huang H, Norman JC, Jung D, Zhang Z, Wang C, Bowers JE, Grillot F. Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon. Optics Letters. 45: 4887-4890. PMID 32870883 DOI: 10.1364/Ol.395499 |
0.49 |
|
| 2020 |
Buffolo M, Samparisi F, Rovere L, De Santi C, Jung D, Norman J, Bowers JE, Herrick RW, Meneghesso G, Zanoni E, Meneghini M. Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon Ieee Journal of Selected Topics in Quantum Electronics. 26: 1-8. DOI: 10.1109/Jstqe.2019.2939519 |
0.483 |
|
| 2020 |
Selvidge J, Norman J, Hughes ET, Shang C, Jung D, Taylor AA, Kennedy MJ, Herrick R, Bowers JE, Mukherjee K. Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon Applied Physics Letters. 117: 122101. DOI: 10.1063/5.0023378 |
0.46 |
|
| 2020 |
Mukherjee K, Selvidge J, Jung D, Norman J, Taylor AA, Salmon M, Liu AY, Bowers JE, Herrick RW. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon Journal of Applied Physics. 128: 25703. DOI: 10.1063/1.5143606 |
0.479 |
|
| 2020 |
Huang H, Duan J, Dong B, Norman J, Jung D, Bowers JE, Grillot F. Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback Apl Photonics. 5: 016103. DOI: 10.1063/1.5120029 |
0.344 |
|
| 2019 |
Yuan Y, Jung D, Sun K, Zheng J, Jones AH, Bowers JE, Campbell JC. III-V on silicon avalanche photodiodes by heteroepitaxy. Optics Letters. 44: 3538-3541. PMID 31305567 DOI: 10.1364/Ol.44.003538 |
0.434 |
|
| 2019 |
Chen C, Chen F, Chen X, Deng B, Eng B, Jung D, Guo Q, Yuan S, Watanabe K, Taniguchi T, Lee ML, Xia F. Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus. Nano Letters. PMID 30721622 DOI: 10.1021/Acs.Nanolett.8B04041 |
0.575 |
|
| 2019 |
Liu S, Wu X, Jung D, Norman JC, Kennedy MJ, Tsang HK, Gossard AC, Bowers JE. High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity Optica. 6: 128. DOI: 10.1364/Optica.6.000128 |
0.413 |
|
| 2019 |
Duan J, Huang H, Dong B, Jung D, Norman JC, Bowers JE, Grillot F. 1.3-
$\mu$
m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon Ieee Photonics Technology Letters. 31: 345-348. DOI: 10.1109/Lpt.2019.2895049 |
0.466 |
|
| 2019 |
Zhang Z, Jung D, Norman JC, Chow WW, Bowers JE. Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-9. DOI: 10.1109/Jstqe.2019.2916884 |
0.449 |
|
| 2019 |
Norman JC, Zhang Z, Jung D, Shang C, Kennedy M, Dumont M, Herrick RW, Gossard AC, Bowers JE. The Importance of p-Doping for Quantum Dot Laser on Silicon Performance Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2941579 |
0.506 |
|
| 2019 |
Buffolo M, Samparisi F, De Santi C, Jung D, Norman J, Bowers JE, Herrick RW, Meneghesso G, Zanoni E, Meneghini M. Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers Ieee Journal of Quantum Electronics. 55: 1-7. DOI: 10.1109/Jqe.2019.2909963 |
0.472 |
|
| 2019 |
Norman JC, Jung D, Zhang Z, Wan Y, Liu S, Shang C, Herrick RW, Chow WW, Gossard AC, Bowers JE. A Review of High-Performance Quantum Dot Lasers on Silicon Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2901508 |
0.526 |
|
| 2019 |
Fan S, Jung D, Sun Y, Li BD, Martin-Martin D, Lee ML. 16.8%-Efficient n + /p GaAs Solar Cells on Si With High Short-Circuit Current Density Ieee Journal of Photovoltaics. 9: 660-665. DOI: 10.1109/Jphotov.2019.2894657 |
0.722 |
|
| 2019 |
Walker ES, Muschinske S, Brennan CJ, Na SR, Trivedi T, March SD, Sun Y, Yang T, Yau A, Jung D, Briggs AF, Krivoy EM, Lee ML, Liechti KM, Yu ET, et al. Composition-dependent structural transition in epitaxial
Bi1−xSbx
thin films on Si(111) Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.064201 |
0.699 |
|
| 2019 |
Vega-Flick A, Jung D, Yue S, Bowers JE, Liao B. Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.034603 |
0.42 |
|
| 2019 |
Jung D, Yu L, Dev S, Wasserman D, Lee ML. Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP Journal of Applied Physics. 125: 082537. DOI: 10.1063/1.5054574 |
0.632 |
|
| 2019 |
Liu S, Norman J, Dumont M, Jung D, Torres A, Gossard AC, Bowers JE, Liu S, Torres A, Gossard A, Bowers J, Liu S, Jung D, Gossard A, Bowers J, ... ... Jung D, et al. High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate Acs Photonics. 6: 2523-2529. DOI: 10.1021/Acsphotonics.9B00903 |
0.466 |
|
| 2019 |
Huang J, Wan Y, Jung D, Norman J, Shang C, Li Q, Lau KM, Gossard AC, Bowers JE, Chen B. Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate Acs Photonics. 6: 1100-1105. DOI: 10.1021/Acsphotonics.8B01707 |
0.523 |
|
| 2018 |
Sun K, Jung D, Shang C, Liu A, Morgan J, Zang J, Li Q, Klamkin J, Bowers JE, Beling A. Low dark current III-V on silicon photodiodes by heteroepitaxy. Optics Express. 26: 13605-13613. PMID 29801383 DOI: 10.1364/Oe.26.013605 |
0.362 |
|
| 2018 |
Inoue D, Jung D, Norman J, Wan Y, Nishiyama N, Arai S, Gossard AC, Bowers JE. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 26: 7022-7033. PMID 29609387 DOI: 10.1364/Oe.26.007022 |
0.508 |
|
| 2018 |
Wan Y, Inoue D, Jung D, Norman JC, Shang C, Gossard AC, Bowers JE. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Photonics Research. 6: 776. DOI: 10.1364/Prj.6.000776 |
0.445 |
|
| 2018 |
Huang H, Duan J, Jung D, Liu AY, Zhang Z, Norman J, Bowers JE, Grillot F. Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon Journal of the Optical Society of America B. 35: 2780. DOI: 10.1364/Josab.35.002780 |
0.486 |
|
| 2018 |
Callahan PG, Haidet BB, Jung D, Seward GGE, Mukherjee K. Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.081601 |
0.34 |
|
| 2018 |
Liu S, Norman JC, Jung D, Kennedy M, Gossard AC, Bowers JE. Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si Applied Physics Letters. 113: 041108. DOI: 10.1063/1.5043200 |
0.457 |
|
| 2018 |
Inoue D, Wan Y, Jung D, Norman J, Shang C, Nishiyama N, Arai S, Gossard AC, Bowers JE. Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si Applied Physics Letters. 113: 093506. DOI: 10.1063/1.5041908 |
0.424 |
|
| 2018 |
Zhang Z, Jung D, Norman JC, Patel P, Chow WW, Bowers JE. Effects of modulation p doping in InAs quantum dot lasers on silicon Applied Physics Letters. 113: 061105. DOI: 10.1063/1.5040792 |
0.462 |
|
| 2018 |
Jung D, Ironside DJ, Bank SR, Gossard AC, Bowers JE. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy Journal of Applied Physics. 123: 205302. DOI: 10.1063/1.5031772 |
0.475 |
|
| 2018 |
Jung D, Herrick R, Norman J, Turnlund K, Jan C, Feng K, Gossard AC, Bowers JE. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si Applied Physics Letters. 112: 153507. DOI: 10.1063/1.5026147 |
0.499 |
|
| 2018 |
Duan J, Huang H, Jung D, Zhang Z, Norman J, Bowers JE, Grillot F. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor Applied Physics Letters. 112: 251111. DOI: 10.1063/1.5025879 |
0.485 |
|
| 2018 |
Norman JC, Jung D, Wan Y, Bowers JE. Perspective: The future of quantum dot photonic integrated circuits Apl Photonics. 3: 030901. DOI: 10.1063/1.5021345 |
0.303 |
|
| 2018 |
Liu S, Jung D, Norman JC, Kennedy MJ, Gossard AC, Bowers JE. 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si Electronics Letters. 54: 432-433. DOI: 10.1049/El.2017.4639 |
0.435 |
|
| 2018 |
Wan Y, Jung D, Shang C, Collins N, MacFarlane I, Norman J, Dumont M, Gossard AC, Bowers JE. Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers Acs Photonics. 6: 279-285. DOI: 10.1021/Acsphotonics.8B01341 |
0.464 |
|
| 2018 |
Krivoy EM, Vasudev AP, Rahimi S, Synowicki RA, McNicholas KM, Ironside DJ, Salas R, Kelp G, Jung D, Nair HP, Shvets G, Akinwande D, Lee ML, Brongersma ML, Bank SR. Rare-Earth Monopnictide Alloys for Tunable, Epitaxial, Designer Plasmonics Acs Photonics. 5: 3051-3056. DOI: 10.1021/Acsphotonics.8B00288 |
0.355 |
|
| 2018 |
Jung D, Norman J, Wan Y, Liu S, Herrick R, Selvidge J, Mukherjee K, Gossard AC, Bowers JE. Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy Physica Status Solidi (a). 216: 1800602. DOI: 10.1002/Pssa.201800602 |
0.471 |
|
| 2017 |
Wan Y, Zhang Z, Chao R, Norman J, Jung D, Shang C, Li Q, Kennedy MJ, Liang D, Zhang C, Shi JW, Gossard AC, Lau KM, Bowers JE. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express. 25: 27715-27723. PMID 29092242 DOI: 10.1364/Oe.25.027715 |
0.516 |
|
| 2017 |
Wan Y, Jung D, Norman J, Shang C, MacFarlane I, Li Q, Kennedy MJ, Gossard AC, Lau KM, Bowers JE. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express. 25: 26853-26860. PMID 29092170 DOI: 10.1364/Oe.25.026853 |
0.46 |
|
| 2017 |
Jung D, Faucher J, Mukherjee S, Akey A, Ironside DJ, Cabral M, Sang X, Lebeau J, Bank SR, Buonassisi T, Moutanabbir O, Lee ML. Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications. 8: 14204. PMID 28128282 DOI: 10.1038/Ncomms14204 |
0.753 |
|
| 2017 |
Liu AY, Peters J, Huang X, Jung D, Norman J, Lee ML, Gossard AC, Bowers JE. Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si. Optics Letters. 42: 338-341. PMID 28081107 DOI: 10.1364/Ol.42.000338 |
0.653 |
|
| 2017 |
Wan Y, Norman J, Li Q, Kennedy MJ, Liang D, Zhang C, Huang D, Zhang Z, Liu AY, Torres A, Jung D, Gossard AC, Hu EL, Lau KM, Bowers JE. 13 μm submilliamp threshold quantum dot micro-lasers on Si Optica. 4: 940. DOI: 10.1364/OPTICA.4.000940 |
0.385 |
|
| 2017 |
Jung D, Bank S, Lee ML, Wasserman D. Next-generation mid-infrared sources Journal of Optics. 19: 123001. DOI: 10.1088/2040-8986/Aa939B |
0.471 |
|
| 2017 |
Jung D, Callahan PG, Shin B, Mukherjee K, Gossard AC, Bowers JE. Low threading dislocation density GaAs growth on on-axis GaP/Si (001) Journal of Applied Physics. 122: 225703. DOI: 10.1063/1.5001360 |
0.453 |
|
| 2017 |
Jung D, Norman J, Kennedy MJ, Shang C, Shin B, Wan Y, Gossard AC, Bowers JE. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si Applied Physics Letters. 111: 122107. DOI: 10.1063/1.4993226 |
0.508 |
|
| 2017 |
Salas R, Guchhait S, Sifferman SD, McNicholas KM, Dasika VD, Jung D, Krivoy EM, Lee ML, Bank SR. Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation Apl Materials. 5: 096106. DOI: 10.1063/1.4991589 |
0.564 |
|
| 2017 |
Jung D, Zhang Z, Norman J, Herrick R, Kennedy MJ, Patel P, Turnlund K, Jan C, Wan Y, Gossard AC, Bowers JE. Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency Acs Photonics. 5: 1094-1100. DOI: 10.1021/Acsphotonics.7B01387 |
0.535 |
|
| 2016 |
Walker ES, Na SR, Jung D, March SD, Kim JS, Trivedi T, Li W, Tao L, Lee ML, Liechti KM, Akinwande D, Bank SR. Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films. Nano Letters. PMID 27775368 DOI: 10.1021/Acs.Nanolett.6B02931 |
0.544 |
|
| 2016 |
Jung D, Yu L, Dev S, Wasserman D, Lee ML. Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers Applied Physics Letters. 109: 211101. DOI: 10.1063/1.4968560 |
0.642 |
|
| 2016 |
Faucher J, Sun Y, Jung D, Martin D, Masuda T, Lee ML. High-efficiency AlGaInP solar cells grown by molecular beam epitaxy Applied Physics Letters. 109: 172105. DOI: 10.1063/1.4965979 |
0.758 |
|
| 2016 |
Salas R, Guchhait S, McNicholas KM, Sifferman SD, Dasika VD, Jung D, Krivoy EM, Lee ML, Bank SR. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation Applied Physics Letters. 108. DOI: 10.1063/1.4948581 |
0.381 |
|
| 2015 |
Lee SM, Kwong A, Jung D, Faucher J, Biswas R, Shen L, Kang D, Lee ML, Yoon J. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures. Acs Nano. PMID 26376087 DOI: 10.1021/Acsnano.5B05585 |
0.76 |
|
| 2015 |
Jung D, Yu L, Wasserman D, Larry Lee M. Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers Journal of Applied Physics. 118: 183101. DOI: 10.1063/1.4935418 |
0.532 |
|
| 2015 |
Salas R, Guchhait S, Sifferman SD, McNicholas KM, Dasika VD, Krivoy EM, Jung D, Lee ML, Bank SR. Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation Applied Physics Letters. 106. DOI: 10.1063/1.4913611 |
0.574 |
|
| 2014 |
Yerino CD, Simmonds PJ, Liang B, Jung D, Schneider C, Unsleber S, Vo M, Huffaker DL, Höfling S, Kamp M, Lee ML. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting Applied Physics Letters. 105. DOI: 10.1063/1.4904944 |
0.757 |
|
| 2014 |
Dasika VD, Krivoy EM, Nair HP, Maddox SJ, Park KW, Jung D, Lee ML, Yu ET, Bank SR. Increased InAs quantum dot size and density using bismuth as a surfactant Applied Physics Letters. 105. DOI: 10.1063/1.4904825 |
0.641 |
|
| 2014 |
Yu L, Jung D, Law S, Shen J, Cha JJ, Lee ML, Wasserman D. Controlling quantum dot energies using submonolayer bandstructure engineering Applied Physics Letters. 105. DOI: 10.1063/1.4893983 |
0.642 |
|
| 2014 |
Yerino CD, Simmonds PJ, Liang B, Dorogan VG, Ware ME, Mazur YI, Jung D, Huffaker DL, Salamo GJ, Lee ML. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap Applied Physics Letters. 105. DOI: 10.1063/1.4893747 |
0.763 |
|
| 2014 |
Huang X, Jung D, Song Y, Lee M, Masuda T. InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001) Electronics Letters. 50: 1226-1227. DOI: 10.1049/El.2014.2077 |
0.703 |
|
| 2012 |
Jung D, Song Y, Yu L, Wasserman D, Larry Lee M. 2.8 μm emission from type-I quantum wells grown on InAs xP1-x/InP metamorphic graded buffers Applied Physics Letters. 101. DOI: 10.1063/1.4773024 |
0.634 |
|
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