| Year |
Citation |
Score |
| 2013 |
Melngailis J. Material shaping by ion and electron nanobeams Advanced Analysis of Nontraditional Machining. 453-486. DOI: 10.1007/978-1-4614-4054-3_8 |
0.355 |
|
| 2012 |
Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Caldwell JD, Eddy CR, Kub FJ, Butler JE, Pate B, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films Ieee Electron Device Letters. 33: 23-25. DOI: 10.1109/Led.2011.2171031 |
0.576 |
|
| 2010 |
Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Mastro MA, Caldwell JD, Hite JK, Eddy CR, Kub FJ, Butler JE, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat spreading films Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2010.5551873 |
0.472 |
|
| 2008 |
Utke I, Hoffmann P, Melngailis J. Gas-assisted focused electron beam and ion beam processing and fabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1197-1276. DOI: 10.1116/1.2955728 |
0.472 |
|
| 2008 |
Motayed A, Davydov AV, Mohammad SN, Melngailis J. Experimental investigation of electron transport properties of gallium nitride nanowires Journal of Applied Physics. 104. DOI: 10.1063/1.2952035 |
0.673 |
|
| 2007 |
Tselev A, Anlage SM, Ma Z, Melngailis J. Broadband dielectric microwave microscopy on micron length scales. The Review of Scientific Instruments. 78: 044701. PMID 17477685 DOI: 10.1063/1.2719613 |
0.325 |
|
| 2007 |
Ervin MH, Chang D, Nichols B, Wickenden A, Barry J, Melngailis J. Annealing of electron beam induced deposits of platinum from Pt (PF3) 4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2250-2254. DOI: 10.1116/1.2806978 |
0.363 |
|
| 2007 |
Gonski R, Melngailis J. Photolithography using an optical microscope Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2451-2452. DOI: 10.1116/1.2779046 |
0.307 |
|
| 2007 |
Motayed A, He M, Davydov AV, Melngailis J, Mohammad SN. Simple model for dielectrophoretic alignment of gallium nitride nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 120-123. DOI: 10.1116/1.2429673 |
0.614 |
|
| 2007 |
Motayed A, Davydov AV, Mohammad SN, Melngailis J. Gallium nitride nanowire devices - Fabrication, characterization, and transport properties 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422513 |
0.638 |
|
| 2007 |
Motayed A, Davydov AV, He M, Mohammad SN, Melngailis J. 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes Applied Physics Letters. 90. DOI: 10.1063/1.2735928 |
0.655 |
|
| 2007 |
Imtiaz A, Anlage SM, Barry JD, Melngailis J. Nanometer-scale material contrast imaging with a near-field microwave microscope Applied Physics Letters. 90. DOI: 10.1063/1.2719164 |
0.402 |
|
| 2007 |
Motayed A, Vaudin M, Davydov AV, Melngailis J, He M, Mohammad SN. Diameter dependent transport properties of gallium nitride nanowire field effect transistors Applied Physics Letters. 90. DOI: 10.1063/1.2434153 |
0.65 |
|
| 2006 |
Jones P, Huber TE, Melngailis J, Barry J, Ervin MH, Zheleva TS, Nikolaeva A, Konopko L, Graf M. Electrical contact resistance of bismuth telluride nanowires International Conference On Thermoelectrics, Ict, Proceedings. 693-696. DOI: 10.1109/ICT.2006.331236 |
0.321 |
|
| 2006 |
Jeon W, Firestone TM, Rodgers JC, Melngailis J. On-chip RF pulse power detector using FIB as a post-CMOS fabrication process Electromagnetics. 26: 103-109. DOI: 10.1080/02726340500214944 |
0.663 |
|
| 2006 |
Motayed A, He M, Davydov AV, Melngailis J, Mohammad SN. Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique Journal of Applied Physics. 100. DOI: 10.1063/1.2397383 |
0.701 |
|
| 2006 |
Motayed A, Davydov AV, Vaudin MD, Levin I, Melngailis J, Mohammad SN. Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2215354 |
0.729 |
|
| 2005 |
Brintlinger T, Fuhrer MS, Melngailis J, Utke I, Bret T, Perentes A, Hoffmann P, Abourida M, Doppelt P. Electrodes for carbon nanotube devices by focused electron beam induced deposition of gold Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 3174-3177. DOI: 10.1116/1.2130355 |
0.404 |
|
| 2005 |
De Marco A, Bandy W, Parsa S, Kaufmann H, Melngailis J. Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2811-2815. DOI: 10.1116/1.2091092 |
0.705 |
|
| 2005 |
Imtiaz A, Pollak M, Anlage SM, Barry JD, Melngailis J. Near-field microwave microscopy on nanometer length scales Journal of Applied Physics. 97. DOI: 10.1063/1.1844614 |
0.32 |
|
| 2004 |
Jeon W, Firestone TM, Rodgers JC, Melngailis J. Design and fabrication of Schottky diode, on-chip RF power detector Solid-State Electronics. 48: 2089-2093. DOI: 10.1016/J.Sse.2004.05.066 |
0.66 |
|
| 2004 |
De Marco AJ, Melngailis J. Maskless fabrication of JFETs via focused ion beams Solid-State Electronics. 48: 1833-1836. DOI: 10.1016/J.Sse.2004.05.022 |
0.711 |
|
| 2004 |
Stanishevsky A, Melngailis J. Patterning at nanoscale with low-dose focused ion beam and chemical etching Materials Research Society Symposium Proceedings. 129-131. |
0.348 |
|
| 2003 |
Stanishevsky A, Edinger K, Orloff J, Melngailis J, Stewart D, Williams A, Clark R. Testing new chemistries for mask repair with focused ion beam gas assisted etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 3067-3071. DOI: 10.1116/1.1624253 |
0.439 |
|
| 2002 |
Brintlinger T, Chen YF, Dürkop T, Cobas E, Fuhrer MS, Barry JD, Melngailis J. Rapid imaging of nanotubes on insulating substrates Applied Physics Letters. 81: 2454-2456. DOI: 10.1063/1.1509113 |
0.303 |
|
| 2002 |
Stanishevsky A, Nagaraj B, Melngailis J, Ramesh R, Khriachtchev L, McDaniel E. Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors Journal of Applied Physics. 92: 3275-3278. DOI: 10.1063/1.1489069 |
0.331 |
|
| 2001 |
DeMarco AJ, Melngailis J. Contact resistance of focused ion beam deposited platinum and tungsten films to silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2543-2546. DOI: 10.1116/1.1410094 |
0.475 |
|
| 2000 |
Ganpule CS, Roytburd AL, Nagarajan V, Stanishevsky A, Melngailis J, Williams ED, Ramesh R. Nanoscale electromechanical phenomena in ferroelectric thin films Mrs Proceedings. 655. DOI: 10.1557/Proc-655-Cc1.5.1 |
0.388 |
|
| 2000 |
Machalett F, Edinger K, Melngailis J, Seidel P, Venkatesan T. Accurate location and marking of grain boundaries using focused ion and electron beams Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 170: 474-482. DOI: 10.1016/S0168-583X(00)00254-8 |
0.445 |
|
| 2000 |
Machalett F, Edinger K, Melngailis J, Diegel M, Steenbeck K, Steinbeiss E. Direct patterning of gold oxide thin films by focused ion-beam irradiation Applied Physics a: Materials Science and Processing. 71: 331-335. DOI: 10.1007/S003390000598 |
0.437 |
|
| 2000 |
Machalett F, Edinger K, Ye L, Melngailis J, Venkatesan T, Diegel M, Steenbeck K. Focused-ion-beam writing of electrical connections into platinum oxide films Applied Physics Letters. 76: 3445-3447. |
0.315 |
|
| 1999 |
DeMarco AJ, Melngailis J. Lateral growth of focused ion beam deposited platinum for stencil mask repair Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 3154-3157. DOI: 10.1116/1.590971 |
0.454 |
|
| 1999 |
Jin I, Chen CH, Pai SP, Ming B, Kang DJ, Venkatesan T, Machalett F, Edinger K, Orloff J, Melngailis J. Fabrication of HTS josephson junctions on substrates prepared by focused ion beam system Ieee Transactions On Applied Superconductivity. 9: 2894-2897. DOI: 10.1109/77.783634 |
0.36 |
|
| 1999 |
Didenko L, Guharay SK, Orloff J, Melngailis J. Coulomb interactions in a focused ion beam column and design guidelines for an experimental system: comparison of results from MONTEC and BOERSCH Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 427: 121-125. DOI: 10.1016/S0168-9002(98)01559-9 |
0.408 |
|
| 1998 |
Edinger K, Melngailis J, Orloff J. Study of precursor gases for focused ion beam insulator deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3311-3314. DOI: 10.1116/1.590497 |
0.483 |
|
| 1998 |
Stanishevsky A, Aggarwal S, Prakash AS, Melngailis J, Ramesh R. Focused ion-beam patterning of nanoscale ferroelectric capacitors Journal of Vacuum Science & Technology B. 16: 3899-3902. DOI: 10.1116/1.590431 |
0.325 |
|
| 1998 |
Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL. Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Journal of Vacuum Science & Technology B. 16: 3812-3816. DOI: 10.1116/1.590414 |
0.484 |
|
| 1998 |
Chen C-, Jin I, Pai SP, Dong ZW, Sharma RP, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J, Zhang Z, Chu WK. Combined method of focused ion beam milling and ion implantation techniques for the fabrication of high temperature superconductor Josephson junctions Journal of Vacuum Science & Technology B. 16: 2898-2901. DOI: 10.1116/1.590291 |
0.415 |
|
| 1998 |
Melngailis J, Mondelli AA, Berry IL, Mohondro R. A review of ion projection lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 927-957. DOI: 10.1116/1.590052 |
0.433 |
|
| 1998 |
Shen CC, Murguia J, Goldsman N, Peckerar M, Melngailis J, Antoniadis DA. Use of focusEDion-beam and modeling to optimize submicron MOSFET characteristics Ieee Transactions On Electron Devices. 45: 453-459. DOI: 10.1109/16.658680 |
0.462 |
|
| 1998 |
Chen CH, Jin I, Pai SP, Dong ZW, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J. Fabrication of high-temperature superconducting Josephson junctions on substrates patterned by focused ion beam Applied Physics Letters. 73: 1730-1732. DOI: 10.1063/1.122259 |
0.349 |
|
| 1998 |
Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL. Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3812-3816. |
0.394 |
|
| 1998 |
Stanishevsky A, Aggarwal S, Prakash AS, Melngailis J, Ramesh R. Focused ion-beam patterning of nanoscale ferroelectric capacitors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3899-3902. |
0.318 |
|
| 1998 |
Chen CH, Jin I, Pai SP, Dong ZW, Sharma RP, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J, Zhang Z, Chu WK. Combined method of focused ion beam milling and ion implantation techniques for the fabrication of high temperature superconductor Joseohson junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2898-2901. |
0.42 |
|
| 1997 |
Wang W, Chang C, Ma D, Peckerar M, Berry I, Goldsman N, Melngailis J. Self-aligned subchannel implant complementary metal–oxide semiconductor devices fabrication Journal of Vacuum Science & Technology B. 15: 2816-2820. DOI: 10.1116/1.589734 |
0.504 |
|
| 1997 |
Berry IL, Mondelli AA, Nichols J, Melngailis J. Programmable aperture plate for maskless high-throughput nanolithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2382-2386. DOI: 10.1116/1.589652 |
0.485 |
|
| 1997 |
Edinger K, Yun V, Melngailis J, Orloff J, Magera G. Development of a high brightness gas field ion source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2365-2368. DOI: 10.1116/1.589648 |
0.382 |
|
| 1997 |
Chason E, Picraux ST, Poate JM, Borland JO, Current MI, Diaz De La Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Ion beams in silicon processing and characterization Journal of Applied Physics. 81: 6513-6561. DOI: 10.1063/1.365193 |
0.498 |
|
| 1997 |
Didenko L, Melngailis J, Löschner H, Stengl G, Chalupka A, Shimkunas A. Analysis of stencil mask distortion in ion projection lithography Microelectronic Engineering. 35: 443-446. DOI: 10.1016/S0167-9317(96)00182-7 |
0.366 |
|
| 1997 |
Guharay SK, Sokolovsky EA, Reiser M, Orloff J, Melngailis J. Study of energy broadening of high-brightness ion beams from a surface plasma Penning source and its relevance in ion projection lithography Microelectronic Engineering. 35: 435-438. DOI: 10.1016/S0167-9317(96)00179-7 |
0.399 |
|
| 1997 |
Wang W, Chang C, Ma D, Peckerar M, Berry I, Goldsman N, Melngailis J. Self-aligned subchannel implant complementary metal-oxide semiconductor devices fabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2816-2820. |
0.413 |
|
| 1997 |
Chen CH, Trajanovic Z, Dong ZW, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J. Fabrication of high-temperature superconductor Josephson junctions by focused ion beam milling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2379-2381. |
0.42 |
|
| 1996 |
Guharay SK, Wang W, Dudnikov VG, Reiser M, Orloff J, Melngailis J. High-brightness ion source for ion projection lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3907-3910. DOI: 10.1116/1.588692 |
0.425 |
|
| 1996 |
Riordon J, Didenko L, Melngailis J. Stencil mask temperature measurement and control during ion irradiation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3900-3902. DOI: 10.1116/1.588690 |
0.403 |
|
| 1996 |
Musil CR, Melngailis J, Etchin S, Haynes TE. Dose-rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam Journal of Applied Physics. 80: 3727-3733. DOI: 10.1063/1.363323 |
0.47 |
|
| 1996 |
Chen CH, Talyansky V, Kwon C, Rajeswari M, Sharma RP, Ramesh R, Venkatesan T, Melngailis J, Zhang Z, Chu WK. Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3 Applied Physics Letters. 69: 3089-3091. |
0.314 |
|
| 1996 |
Picraux ST, Chason E, Poate JM, Borland JO, Current MI, Diaz de la Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Energetic ion beams in semiconductor processing: summary of a doe panel study Materials Research Society Symposium - Proceedings. 396: 859-868. |
0.352 |
|
| 1996 |
Funatsu J, Thompson CV, Melngailis J, Walpole JN. Laser assisted focused-ion-beam-induced deposition of copper Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 179-180. |
0.316 |
|
| 1995 |
Chen C‐, Guharay SK, Reiser M, Riordon J, Orloff J, Melngailis J. Study of H− beams for ion‐projection lithography Journal of Vacuum Science & Technology B. 13: 2597-2599. DOI: 10.1116/1.588031 |
0.436 |
|
| 1995 |
Birman A, Levush B, Melngailis J, Löschner H, Stengl G. Control of temperature gradients and distortion of ion projection lithography masks Journal of Vacuum Science & Technology B. 13: 2584-2587. DOI: 10.1116/1.588028 |
0.391 |
|
| 1995 |
Armstrong MA, Etchin S, Melngailis J, Antoniadis DA. Principle of operation and carrier distributions of AlGaAs/GaAs in-plane-gated channels Journal of Applied Physics. 78: 560-563. DOI: 10.1063/1.360641 |
0.435 |
|
| 1995 |
Brünger WH, Löschner H, Stengl G, Fallmann W, Finkelstein W, Melngailis J. Evaluation of critical design parameters of an ion projector for 1 Gbit DRAM production Microelectronic Engineering. 27: 323-326. DOI: 10.1016/0167-9317(94)00116-C |
0.414 |
|
| 1995 |
Ro JS, Thompson CV, Melngailis J. Microstructure of gold grown by ion-induced deposition Thin Solid Films. 258: 333-335. DOI: 10.1016/0040-6090(94)06399-0 |
0.402 |
|
| 1994 |
Loeschne H, Stengl G, Berry IL, Randall JN, Wolfe JC, Finkelstein W, Hill RW, Melngailis J, Harriott LR, Bruenger W, Buchmann LM. Ion projection: the successor to optical lithography Proceedings of Spie - the International Society For Optical Engineering. 2194: 384-393. |
0.31 |
|
| 1993 |
Melngailis J. Materials issues in x-ray mask repair by focused ion beams Materials Research Society Symposium Proceedings. 306: 237-258. DOI: 10.1557/Proc-306-237 |
0.416 |
|
| 1993 |
Xu X, Melngailis J. Quasiperiodic nanostructures in focused ion beam deposited tungsten at high angles of incidence Journal of Vacuum Science & Technology B. 11: 2436-2440. DOI: 10.1116/1.587001 |
0.466 |
|
| 1993 |
Vignaud D, Musil CR, Etchin S, Antoniadis DA, Melngailis J. Lateral straggle of Si and Be focused‐ion beam implanted in GaAs Journal of Vacuum Science & Technology B. 11: 581-586. DOI: 10.1116/1.586804 |
0.413 |
|
| 1993 |
Melngailis J. Focused ion beam lithography Nuclear Inst. and Methods in Physics Research, B. 80: 1271-1280. DOI: 10.1016/0168-583X(93)90781-Z |
0.462 |
|
| 1992 |
Xu X, Ratta ADD, Sosonkina J, Melngailis J. Focused ion beam induced deposition and ion milling as a function of angle of ion incidence Journal of Vacuum Science & Technology B. 10: 2675-2680. DOI: 10.1116/1.586024 |
0.435 |
|
| 1992 |
Lattes AL, Seaver MM, Munroe SC, Murguia JE, Melngailis J. Improved Drift in Two-Phase, Long-Channel, Shallow Buried-Channel CCD’s with Longitudinally Nonuniform Storage-Gate Implants Ieee Transactions On Electron Devices. 39: 1772-1774. DOI: 10.1109/16.141248 |
0.308 |
|
| 1992 |
Vignaud D, Etchin S, Liao KS, Musil CR, Antoniadis DA, Melngailis J. Lateral straggle of focused-ion-beam implanted Be in GaAs Applied Physics Letters. 60: 2267-2269. DOI: 10.1063/1.107050 |
0.483 |
|
| 1991 |
Melngailis J, Blauner PG, Dubner AD, Ro JS, Tao T, Thompson CV. Focused ion beam induced deposition Proceedings - the Electrochemical Society. 91: 653-666. DOI: 10.1557/Proc-147-127 |
0.436 |
|
| 1991 |
Hartney MA, Shaver DC, Shepard MI, Melngailis J, Medvedev V, Robinson WP. Surface imaging of focused ion-beam exposed resists Journal of Vacuum Science & Technology B. 9: 3432-3435. DOI: 10.1116/1.585817 |
0.42 |
|
| 1991 |
Murguia JE, Shepard MI, Melngailis J, Lattes AL, Munroe SC. Increase in silicon charge coupled devices speed with focused ion beam implanted channels Journal of Vacuum Science & Technology B. 9: 2714-2717. DOI: 10.1116/1.585678 |
0.496 |
|
| 1991 |
Lezec HJ, Musil CR, Melngailis J, Mahoney LJ, Woodhouse JD. Dose‐rate effects in focused‐ion‐beam implantation of Si into GaAs Journal of Vacuum Science & Technology B. 9: 2709-2713. DOI: 10.1116/1.585677 |
0.451 |
|
| 1991 |
Tao T, Wilkinson W, Melngailis J. Focused ion beam induced deposition of platinum for repair processes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 9: 162-164. DOI: 10.1116/1.585279 |
0.465 |
|
| 1991 |
Dubner AD, Wagner A, Melngailis J, Thompson CV. The role of the ion-solid interaction in ion-beam-induced deposition of gold Journal of Applied Physics. 70: 665-673. DOI: 10.1063/1.349671 |
0.399 |
|
| 1991 |
Hartney MA, Shaver DC, Shepard MI, Huh JS, Melngailis J. Silylation of focused ion beam exposed resists Applied Physics Letters. 59: 485-487. DOI: 10.1063/1.105416 |
0.445 |
|
| 1991 |
Chu A, Chu L, Macropoulos W, Khair K, Patel R, Cordaro MH, Mahoney LJ, Lezec H, Melngailis J. Performance and applications of novel tunable oscillators utilizing focused-ion-beam-implanted Gunn-effect devices Ieee Mtt-S International Microwave Symposium Digest. 3: 1179-1182. |
0.352 |
|
| 1991 |
Melngailis J. Focused ion beam induced deposition: a review (Invited Paper) Proceedings of Spie - the International Society For Optical Engineering. 1465: 36-49. |
0.374 |
|
| 1990 |
Tao T, Ro J, Melngailis J, Xue Z, Kaesz HD. Focused ion beam induced deposition of platinum Journal of Vacuum Science & Technology B. 8: 1826-1829. DOI: 10.1116/1.585167 |
0.433 |
|
| 1990 |
Murguia JE, Musil CR, Shepard MI, Lezec H, Antoniadis DA, Melngailis J. Merging focused ion beam patterning and optical lithography in device and circuit fabrication Journal of Vacuum Science & Technology B. 8: 1374-1379. DOI: 10.1116/1.585081 |
0.435 |
|
| 1989 |
Blauner PG, Ro JS, Butt Y, Melngailis J. Focused ion beam fabrication of submicron gold structures Journal of Vacuum Science & Technology B. 7: 609-617. DOI: 10.1116/1.584803 |
0.487 |
|
| 1989 |
Melngailis J. Focused ion beam lithography and implantation . 70-75. |
0.452 |
|
| 1988 |
Blauner PG, Ro JS, Butt Y, Thompson CV, Melngailis J. The Microstructure of Gold Films Written by Focused Ion Beam Induced Deposition Mrs Proceedings. 129. DOI: 10.1557/Proc-129-483 |
0.416 |
|
| 1988 |
Melngailis J. Focused ion beam microfabrication Proceedings of Spie - the International Society For Optical Engineering. 923: 72-83. DOI: 10.1117/12.945634 |
0.449 |
|
| 1988 |
Melngailis J, Herndon TO, Shepard M, Lezec H. Planar vias through Si3N4 fabricated by focused ion beam implantation Journal of Vacuum Science & Technology B. 6: 1022-1025. DOI: 10.1116/1.584340 |
0.519 |
|
| 1988 |
Lezec HJ, Ismail K, Mahoney LJ, Shepard MI, Antoniadis DA, Melngailis J. A Tunable-Frequency Gunn Diode Fabricated by Focused Ion-Beam Implantation Ieee Electron Device Letters. 9: 476-478. DOI: 10.1109/55.6950 |
0.545 |
|
| 1988 |
Lezec HJ, Ismail K, Shepard MI, Antoniadis DA, Melngailis J, Mahoney LJ. IA-5 Tunable Frequency Gunn Diodes Fabricated By Focused Ion Beam Implantation Ieee Transactions On Electron Devices. 35: 2429. DOI: 10.1109/16.8833 |
0.445 |
|
| 1987 |
Ro J, Dubner A, Thompson C, Melngailis J. Microstructure of Gold Films Grown by Ion Induced Deposition Mrs Proceedings. 101. DOI: 10.1557/Proc-101-255 |
0.435 |
|
| 1987 |
Melngailis J. Focused ion beam technology and applications Journal of Vacuum Science & Technology B. 5: 469-495. DOI: 10.1116/1.583937 |
0.501 |
|
| 1987 |
Melngailis J. Cermet as an inorganic resist for ion lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 379. DOI: 10.1116/1.583907 |
0.307 |
|
| 1987 |
Dubner AD, Shedd GM, Lezec H, Melngailis J. Summary Abstract: Ion-beam-induced deposition of gold by focused and broad-beam sources Journal of Vacuum Science & Technology B. 5: 1434-1435. DOI: 10.1116/1.583832 |
0.42 |
|
| 1986 |
Melngailis J, Musil CR, Stevens EH, Utlaut M, Kellogg EM, Post RT, Geis MW, Mountain RW. FOCUSED ION BEAM AS AN INTEGRATED CIRCUIT RESTRUCTURING TOOL Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 176-180. DOI: 10.1116/1.583373 |
0.31 |
|
| 1986 |
Shedd GM, Lezec H, Dubner AD, Melngailis J. Focused ion beam induced deposition of gold Applied Physics Letters. 49: 1584-1586. DOI: 10.1063/1.97287 |
0.47 |
|
| 1986 |
Musil CR, Bartelt JL, Melngailis J. FOCUSED ION BEAM MICROSURGERY FOR INTEGRATED CIRCUIT CUSTOMIZATION OR REPAIR Proceedings of the Custom Integrated Circuits Conference. 591-593. |
0.32 |
|
| 1985 |
Warren AC, Antoniadis DA, Smith HI, Melngailis J. Surface Superlattice Formation in Silicon Inversion Layers Using 0.2-μm Period Grating-Gate Electrodes Ieee Electron Device Letters. 6: 294-296. DOI: 10.1109/Edl.1985.26130 |
0.408 |
|
| 1985 |
Shahidi GG, Ippen EP, Melngailis J. Submicron-gap high-mobility silicon picosecond photodetectors Applied Physics Letters. 46: 719-721. DOI: 10.1063/1.95486 |
0.334 |
|
| 1981 |
Tsumita N, Melngailis J, Hawryluk AM, Smith HI. FABRICATION OF X-RAY MASKS USING ANISOTROPIC ETCHING OF (110) Si AND SHADOWING TECHNIQUES Journal of Vacuum Science & Technology. 19: 1211-1213. DOI: 10.1116/1.571246 |
0.371 |
|
| 1981 |
Hawryluk AM, Ceglio NM, Price RH, Melngailis J, Smith HI. Gold transmission gratings with submicrometer periods and thicknesses ≳0.5 μm Journal of Vacuum Science and Technology. 19: 897-900. DOI: 10.1116/1.571230 |
0.331 |
|
| 1973 |
Smith HI, Melngailis J, Williamson RC, Brogan WT. Abstract: Ion Beam Etching of Surface Gratings Journal of Vacuum Science and Technology. 10: 1127-1127. DOI: 10.1116/1.1318487 |
0.421 |
|
| 1973 |
Melngailis J, Ryan JL, Harman TC. Electron radiation damage and annealing of Hg1-xCdxTe at low temperatures Journal of Applied Physics. 44: 2647-2651. DOI: 10.1063/1.1662628 |
0.334 |
|
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