John Melngailis - Publications

Affiliations: 
Electrical and Computer Engineering University of Maryland, College Park, College Park, MD 

102 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Melngailis J. Material shaping by ion and electron nanobeams Advanced Analysis of Nontraditional Machining. 453-486. DOI: 10.1007/978-1-4614-4054-3_8  0.355
2012 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Caldwell JD, Eddy CR, Kub FJ, Butler JE, Pate B, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films Ieee Electron Device Letters. 33: 23-25. DOI: 10.1109/Led.2011.2171031  0.577
2010 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Mastro MA, Caldwell JD, Hite JK, Eddy CR, Kub FJ, Butler JE, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat spreading films Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2010.5551873  0.473
2008 Utke I, Hoffmann P, Melngailis J. Gas-assisted focused electron beam and ion beam processing and fabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1197-1276. DOI: 10.1116/1.2955728  0.472
2008 Motayed A, Davydov AV, Mohammad SN, Melngailis J. Experimental investigation of electron transport properties of gallium nitride nanowires Journal of Applied Physics. 104. DOI: 10.1063/1.2952035  0.673
2007 Tselev A, Anlage SM, Ma Z, Melngailis J. Broadband dielectric microwave microscopy on micron length scales. The Review of Scientific Instruments. 78: 044701. PMID 17477685 DOI: 10.1063/1.2719613  0.325
2007 Ervin MH, Chang D, Nichols B, Wickenden A, Barry J, Melngailis J. Annealing of electron beam induced deposits of platinum from Pt (PF3) 4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2250-2254. DOI: 10.1116/1.2806978  0.363
2007 Gonski R, Melngailis J. Photolithography using an optical microscope Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2451-2452. DOI: 10.1116/1.2779046  0.307
2007 Motayed A, He M, Davydov AV, Melngailis J, Mohammad SN. Simple model for dielectrophoretic alignment of gallium nitride nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 120-123. DOI: 10.1116/1.2429673  0.614
2007 Motayed A, Davydov AV, Mohammad SN, Melngailis J. Gallium nitride nanowire devices - Fabrication, characterization, and transport properties 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422513  0.638
2007 Motayed A, Davydov AV, He M, Mohammad SN, Melngailis J. 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes Applied Physics Letters. 90. DOI: 10.1063/1.2735928  0.655
2007 Imtiaz A, Anlage SM, Barry JD, Melngailis J. Nanometer-scale material contrast imaging with a near-field microwave microscope Applied Physics Letters. 90. DOI: 10.1063/1.2719164  0.402
2007 Motayed A, Vaudin M, Davydov AV, Melngailis J, He M, Mohammad SN. Diameter dependent transport properties of gallium nitride nanowire field effect transistors Applied Physics Letters. 90. DOI: 10.1063/1.2434153  0.65
2006 Jones P, Huber TE, Melngailis J, Barry J, Ervin MH, Zheleva TS, Nikolaeva A, Konopko L, Graf M. Electrical contact resistance of bismuth telluride nanowires International Conference On Thermoelectrics, Ict, Proceedings. 693-696. DOI: 10.1109/ICT.2006.331236  0.321
2006 Jeon W, Firestone TM, Rodgers JC, Melngailis J. On-chip RF pulse power detector using FIB as a post-CMOS fabrication process Electromagnetics. 26: 103-109. DOI: 10.1080/02726340500214944  0.663
2006 Motayed A, He M, Davydov AV, Melngailis J, Mohammad SN. Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique Journal of Applied Physics. 100. DOI: 10.1063/1.2397383  0.701
2006 Motayed A, Davydov AV, Vaudin MD, Levin I, Melngailis J, Mohammad SN. Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2215354  0.729
2005 Brintlinger T, Fuhrer MS, Melngailis J, Utke I, Bret T, Perentes A, Hoffmann P, Abourida M, Doppelt P. Electrodes for carbon nanotube devices by focused electron beam induced deposition of gold Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 3174-3177. DOI: 10.1116/1.2130355  0.404
2005 De Marco A, Bandy W, Parsa S, Kaufmann H, Melngailis J. Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2811-2815. DOI: 10.1116/1.2091092  0.705
2005 Imtiaz A, Pollak M, Anlage SM, Barry JD, Melngailis J. Near-field microwave microscopy on nanometer length scales Journal of Applied Physics. 97. DOI: 10.1063/1.1844614  0.32
2004 Jeon W, Firestone TM, Rodgers JC, Melngailis J. Design and fabrication of Schottky diode, on-chip RF power detector Solid-State Electronics. 48: 2089-2093. DOI: 10.1016/J.Sse.2004.05.066  0.66
2004 De Marco AJ, Melngailis J. Maskless fabrication of JFETs via focused ion beams Solid-State Electronics. 48: 1833-1836. DOI: 10.1016/J.Sse.2004.05.022  0.711
2004 Stanishevsky A, Melngailis J. Patterning at nanoscale with low-dose focused ion beam and chemical etching Materials Research Society Symposium Proceedings. 129-131.  0.348
2003 Stanishevsky A, Edinger K, Orloff J, Melngailis J, Stewart D, Williams A, Clark R. Testing new chemistries for mask repair with focused ion beam gas assisted etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 3067-3071. DOI: 10.1116/1.1624253  0.439
2002 Brintlinger T, Chen YF, Dürkop T, Cobas E, Fuhrer MS, Barry JD, Melngailis J. Rapid imaging of nanotubes on insulating substrates Applied Physics Letters. 81: 2454-2456. DOI: 10.1063/1.1509113  0.303
2002 Stanishevsky A, Nagaraj B, Melngailis J, Ramesh R, Khriachtchev L, McDaniel E. Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors Journal of Applied Physics. 92: 3275-3278. DOI: 10.1063/1.1489069  0.331
2001 DeMarco AJ, Melngailis J. Contact resistance of focused ion beam deposited platinum and tungsten films to silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2543-2546. DOI: 10.1116/1.1410094  0.475
2000 Ganpule CS, Roytburd AL, Nagarajan V, Stanishevsky A, Melngailis J, Williams ED, Ramesh R. Nanoscale electromechanical phenomena in ferroelectric thin films Mrs Proceedings. 655. DOI: 10.1557/Proc-655-Cc1.5.1  0.388
2000 Machalett F, Edinger K, Melngailis J, Seidel P, Venkatesan T. Accurate location and marking of grain boundaries using focused ion and electron beams Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 170: 474-482. DOI: 10.1016/S0168-583X(00)00254-8  0.445
2000 Machalett F, Edinger K, Melngailis J, Diegel M, Steenbeck K, Steinbeiss E. Direct patterning of gold oxide thin films by focused ion-beam irradiation Applied Physics a: Materials Science and Processing. 71: 331-335. DOI: 10.1007/S003390000598  0.437
2000 Machalett F, Edinger K, Ye L, Melngailis J, Venkatesan T, Diegel M, Steenbeck K. Focused-ion-beam writing of electrical connections into platinum oxide films Applied Physics Letters. 76: 3445-3447.  0.315
1999 DeMarco AJ, Melngailis J. Lateral growth of focused ion beam deposited platinum for stencil mask repair Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 3154-3157. DOI: 10.1116/1.590971  0.454
1999 Jin I, Chen CH, Pai SP, Ming B, Kang DJ, Venkatesan T, Machalett F, Edinger K, Orloff J, Melngailis J. Fabrication of HTS josephson junctions on substrates prepared by focused ion beam system Ieee Transactions On Applied Superconductivity. 9: 2894-2897. DOI: 10.1109/77.783634  0.36
1999 Didenko L, Guharay SK, Orloff J, Melngailis J. Coulomb interactions in a focused ion beam column and design guidelines for an experimental system: comparison of results from MONTEC and BOERSCH Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 427: 121-125. DOI: 10.1016/S0168-9002(98)01559-9  0.408
1998 Edinger K, Melngailis J, Orloff J. Study of precursor gases for focused ion beam insulator deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3311-3314. DOI: 10.1116/1.590497  0.483
1998 Stanishevsky A, Aggarwal S, Prakash AS, Melngailis J, Ramesh R. Focused ion-beam patterning of nanoscale ferroelectric capacitors Journal of Vacuum Science & Technology B. 16: 3899-3902. DOI: 10.1116/1.590431  0.325
1998 Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL. Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Journal of Vacuum Science & Technology B. 16: 3812-3816. DOI: 10.1116/1.590414  0.484
1998 Chen C-, Jin I, Pai SP, Dong ZW, Sharma RP, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J, Zhang Z, Chu WK. Combined method of focused ion beam milling and ion implantation techniques for the fabrication of high temperature superconductor Josephson junctions Journal of Vacuum Science & Technology B. 16: 2898-2901. DOI: 10.1116/1.590291  0.415
1998 Melngailis J, Mondelli AA, Berry IL, Mohondro R. A review of ion projection lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 927-957. DOI: 10.1116/1.590052  0.433
1998 Shen CC, Murguia J, Goldsman N, Peckerar M, Melngailis J, Antoniadis DA. Use of focusEDion-beam and modeling to optimize submicron MOSFET characteristics Ieee Transactions On Electron Devices. 45: 453-459. DOI: 10.1109/16.658680  0.462
1998 Chen CH, Jin I, Pai SP, Dong ZW, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J. Fabrication of high-temperature superconducting Josephson junctions on substrates patterned by focused ion beam Applied Physics Letters. 73: 1730-1732. DOI: 10.1063/1.122259  0.349
1998 Wang W, McCarthy D, Park D, Ma D, Marrian C, Peckerar M, Goldsman N, Melngailis J, Berry IL. Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3812-3816.  0.394
1998 Stanishevsky A, Aggarwal S, Prakash AS, Melngailis J, Ramesh R. Focused ion-beam patterning of nanoscale ferroelectric capacitors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3899-3902.  0.318
1998 Chen CH, Jin I, Pai SP, Dong ZW, Sharma RP, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J, Zhang Z, Chu WK. Combined method of focused ion beam milling and ion implantation techniques for the fabrication of high temperature superconductor Joseohson junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2898-2901.  0.42
1997 Wang W, Chang C, Ma D, Peckerar M, Berry I, Goldsman N, Melngailis J. Self-aligned subchannel implant complementary metal–oxide semiconductor devices fabrication Journal of Vacuum Science & Technology B. 15: 2816-2820. DOI: 10.1116/1.589734  0.504
1997 Berry IL, Mondelli AA, Nichols J, Melngailis J. Programmable aperture plate for maskless high-throughput nanolithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2382-2386. DOI: 10.1116/1.589652  0.485
1997 Edinger K, Yun V, Melngailis J, Orloff J, Magera G. Development of a high brightness gas field ion source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2365-2368. DOI: 10.1116/1.589648  0.382
1997 Chason E, Picraux ST, Poate JM, Borland JO, Current MI, Diaz De La Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Ion beams in silicon processing and characterization Journal of Applied Physics. 81: 6513-6561. DOI: 10.1063/1.365193  0.498
1997 Didenko L, Melngailis J, Löschner H, Stengl G, Chalupka A, Shimkunas A. Analysis of stencil mask distortion in ion projection lithography Microelectronic Engineering. 35: 443-446. DOI: 10.1016/S0167-9317(96)00182-7  0.366
1997 Guharay SK, Sokolovsky EA, Reiser M, Orloff J, Melngailis J. Study of energy broadening of high-brightness ion beams from a surface plasma Penning source and its relevance in ion projection lithography Microelectronic Engineering. 35: 435-438. DOI: 10.1016/S0167-9317(96)00179-7  0.399
1997 Wang W, Chang C, Ma D, Peckerar M, Berry I, Goldsman N, Melngailis J. Self-aligned subchannel implant complementary metal-oxide semiconductor devices fabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2816-2820.  0.413
1997 Chen CH, Trajanovic Z, Dong ZW, Lobb CJ, Venkatesan T, Edinger K, Orloff J, Melngailis J. Fabrication of high-temperature superconductor Josephson junctions by focused ion beam milling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2379-2381.  0.42
1996 Guharay SK, Wang W, Dudnikov VG, Reiser M, Orloff J, Melngailis J. High-brightness ion source for ion projection lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3907-3910. DOI: 10.1116/1.588692  0.425
1996 Riordon J, Didenko L, Melngailis J. Stencil mask temperature measurement and control during ion irradiation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3900-3902. DOI: 10.1116/1.588690  0.403
1996 Musil CR, Melngailis J, Etchin S, Haynes TE. Dose-rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam Journal of Applied Physics. 80: 3727-3733. DOI: 10.1063/1.363323  0.47
1996 Chen CH, Talyansky V, Kwon C, Rajeswari M, Sharma RP, Ramesh R, Venkatesan T, Melngailis J, Zhang Z, Chu WK. Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3 Applied Physics Letters. 69: 3089-3091.  0.314
1996 Picraux ST, Chason E, Poate JM, Borland JO, Current MI, Diaz de la Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Energetic ion beams in semiconductor processing: summary of a doe panel study Materials Research Society Symposium - Proceedings. 396: 859-868.  0.352
1996 Funatsu J, Thompson CV, Melngailis J, Walpole JN. Laser assisted focused-ion-beam-induced deposition of copper Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 179-180.  0.316
1995 Chen C‐, Guharay SK, Reiser M, Riordon J, Orloff J, Melngailis J. Study of H− beams for ion‐projection lithography Journal of Vacuum Science & Technology B. 13: 2597-2599. DOI: 10.1116/1.588031  0.436
1995 Birman A, Levush B, Melngailis J, Löschner H, Stengl G. Control of temperature gradients and distortion of ion projection lithography masks Journal of Vacuum Science & Technology B. 13: 2584-2587. DOI: 10.1116/1.588028  0.391
1995 Armstrong MA, Etchin S, Melngailis J, Antoniadis DA. Principle of operation and carrier distributions of AlGaAs/GaAs in-plane-gated channels Journal of Applied Physics. 78: 560-563. DOI: 10.1063/1.360641  0.435
1995 Brünger WH, Löschner H, Stengl G, Fallmann W, Finkelstein W, Melngailis J. Evaluation of critical design parameters of an ion projector for 1 Gbit DRAM production Microelectronic Engineering. 27: 323-326. DOI: 10.1016/0167-9317(94)00116-C  0.414
1995 Ro JS, Thompson CV, Melngailis J. Microstructure of gold grown by ion-induced deposition Thin Solid Films. 258: 333-335. DOI: 10.1016/0040-6090(94)06399-0  0.402
1994 Loeschne H, Stengl G, Berry IL, Randall JN, Wolfe JC, Finkelstein W, Hill RW, Melngailis J, Harriott LR, Bruenger W, Buchmann LM. Ion projection: the successor to optical lithography Proceedings of Spie - the International Society For Optical Engineering. 2194: 384-393.  0.31
1993 Melngailis J. Materials issues in x-ray mask repair by focused ion beams Materials Research Society Symposium Proceedings. 306: 237-258. DOI: 10.1557/Proc-306-237  0.416
1993 Xu X, Melngailis J. Quasiperiodic nanostructures in focused ion beam deposited tungsten at high angles of incidence Journal of Vacuum Science & Technology B. 11: 2436-2440. DOI: 10.1116/1.587001  0.466
1993 Vignaud D, Musil CR, Etchin S, Antoniadis DA, Melngailis J. Lateral straggle of Si and Be focused‐ion beam implanted in GaAs Journal of Vacuum Science & Technology B. 11: 581-586. DOI: 10.1116/1.586804  0.413
1993 Melngailis J. Focused ion beam lithography Nuclear Inst. and Methods in Physics Research, B. 80: 1271-1280. DOI: 10.1016/0168-583X(93)90781-Z  0.462
1992 Xu X, Ratta ADD, Sosonkina J, Melngailis J. Focused ion beam induced deposition and ion milling as a function of angle of ion incidence Journal of Vacuum Science & Technology B. 10: 2675-2680. DOI: 10.1116/1.586024  0.435
1992 Lattes AL, Seaver MM, Munroe SC, Murguia JE, Melngailis J. Improved Drift in Two-Phase, Long-Channel, Shallow Buried-Channel CCD’s with Longitudinally Nonuniform Storage-Gate Implants Ieee Transactions On Electron Devices. 39: 1772-1774. DOI: 10.1109/16.141248  0.308
1992 Vignaud D, Etchin S, Liao KS, Musil CR, Antoniadis DA, Melngailis J. Lateral straggle of focused-ion-beam implanted Be in GaAs Applied Physics Letters. 60: 2267-2269. DOI: 10.1063/1.107050  0.483
1991 Melngailis J, Blauner PG, Dubner AD, Ro JS, Tao T, Thompson CV. Focused ion beam induced deposition Proceedings - the Electrochemical Society. 91: 653-666. DOI: 10.1557/Proc-147-127  0.436
1991 Hartney MA, Shaver DC, Shepard MI, Melngailis J, Medvedev V, Robinson WP. Surface imaging of focused ion-beam exposed resists Journal of Vacuum Science & Technology B. 9: 3432-3435. DOI: 10.1116/1.585817  0.42
1991 Murguia JE, Shepard MI, Melngailis J, Lattes AL, Munroe SC. Increase in silicon charge coupled devices speed with focused ion beam implanted channels Journal of Vacuum Science & Technology B. 9: 2714-2717. DOI: 10.1116/1.585678  0.496
1991 Lezec HJ, Musil CR, Melngailis J, Mahoney LJ, Woodhouse JD. Dose‐rate effects in focused‐ion‐beam implantation of Si into GaAs Journal of Vacuum Science & Technology B. 9: 2709-2713. DOI: 10.1116/1.585677  0.451
1991 Tao T, Wilkinson W, Melngailis J. Focused ion beam induced deposition of platinum for repair processes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 9: 162-164. DOI: 10.1116/1.585279  0.465
1991 Dubner AD, Wagner A, Melngailis J, Thompson CV. The role of the ion-solid interaction in ion-beam-induced deposition of gold Journal of Applied Physics. 70: 665-673. DOI: 10.1063/1.349671  0.399
1991 Hartney MA, Shaver DC, Shepard MI, Huh JS, Melngailis J. Silylation of focused ion beam exposed resists Applied Physics Letters. 59: 485-487. DOI: 10.1063/1.105416  0.445
1991 Chu A, Chu L, Macropoulos W, Khair K, Patel R, Cordaro MH, Mahoney LJ, Lezec H, Melngailis J. Performance and applications of novel tunable oscillators utilizing focused-ion-beam-implanted Gunn-effect devices Ieee Mtt-S International Microwave Symposium Digest. 3: 1179-1182.  0.352
1991 Melngailis J. Focused ion beam induced deposition: a review (Invited Paper) Proceedings of Spie - the International Society For Optical Engineering. 1465: 36-49.  0.374
1990 Tao T, Ro J, Melngailis J, Xue Z, Kaesz HD. Focused ion beam induced deposition of platinum Journal of Vacuum Science & Technology B. 8: 1826-1829. DOI: 10.1116/1.585167  0.433
1990 Murguia JE, Musil CR, Shepard MI, Lezec H, Antoniadis DA, Melngailis J. Merging focused ion beam patterning and optical lithography in device and circuit fabrication Journal of Vacuum Science & Technology B. 8: 1374-1379. DOI: 10.1116/1.585081  0.435
1989 Blauner PG, Ro JS, Butt Y, Melngailis J. Focused ion beam fabrication of submicron gold structures Journal of Vacuum Science & Technology B. 7: 609-617. DOI: 10.1116/1.584803  0.487
1989 Melngailis J. Focused ion beam lithography and implantation . 70-75.  0.452
1988 Blauner PG, Ro JS, Butt Y, Thompson CV, Melngailis J. The Microstructure of Gold Films Written by Focused Ion Beam Induced Deposition Mrs Proceedings. 129. DOI: 10.1557/Proc-129-483  0.416
1988 Melngailis J. Focused ion beam microfabrication Proceedings of Spie - the International Society For Optical Engineering. 923: 72-83. DOI: 10.1117/12.945634  0.449
1988 Melngailis J, Herndon TO, Shepard M, Lezec H. Planar vias through Si3N4 fabricated by focused ion beam implantation Journal of Vacuum Science & Technology B. 6: 1022-1025. DOI: 10.1116/1.584340  0.519
1988 Lezec HJ, Ismail K, Mahoney LJ, Shepard MI, Antoniadis DA, Melngailis J. A Tunable-Frequency Gunn Diode Fabricated by Focused Ion-Beam Implantation Ieee Electron Device Letters. 9: 476-478. DOI: 10.1109/55.6950  0.545
1988 Lezec HJ, Ismail K, Shepard MI, Antoniadis DA, Melngailis J, Mahoney LJ. IA-5 Tunable Frequency Gunn Diodes Fabricated By Focused Ion Beam Implantation Ieee Transactions On Electron Devices. 35: 2429. DOI: 10.1109/16.8833  0.445
1987 Ro J, Dubner A, Thompson C, Melngailis J. Microstructure of Gold Films Grown by Ion Induced Deposition Mrs Proceedings. 101. DOI: 10.1557/Proc-101-255  0.435
1987 Melngailis J. Focused ion beam technology and applications Journal of Vacuum Science & Technology B. 5: 469-495. DOI: 10.1116/1.583937  0.501
1987 Melngailis J. Cermet as an inorganic resist for ion lithography Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 379. DOI: 10.1116/1.583907  0.307
1987 Dubner AD, Shedd GM, Lezec H, Melngailis J. Summary Abstract: Ion-beam-induced deposition of gold by focused and broad-beam sources Journal of Vacuum Science & Technology B. 5: 1434-1435. DOI: 10.1116/1.583832  0.42
1986 Melngailis J, Musil CR, Stevens EH, Utlaut M, Kellogg EM, Post RT, Geis MW, Mountain RW. FOCUSED ION BEAM AS AN INTEGRATED CIRCUIT RESTRUCTURING TOOL Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 176-180. DOI: 10.1116/1.583373  0.31
1986 Shedd GM, Lezec H, Dubner AD, Melngailis J. Focused ion beam induced deposition of gold Applied Physics Letters. 49: 1584-1586. DOI: 10.1063/1.97287  0.47
1986 Musil CR, Bartelt JL, Melngailis J. FOCUSED ION BEAM MICROSURGERY FOR INTEGRATED CIRCUIT CUSTOMIZATION OR REPAIR Proceedings of the Custom Integrated Circuits Conference. 591-593.  0.32
1985 Warren AC, Antoniadis DA, Smith HI, Melngailis J. Surface Superlattice Formation in Silicon Inversion Layers Using 0.2-μm Period Grating-Gate Electrodes Ieee Electron Device Letters. 6: 294-296. DOI: 10.1109/Edl.1985.26130  0.408
1985 Shahidi GG, Ippen EP, Melngailis J. Submicron-gap high-mobility silicon picosecond photodetectors Applied Physics Letters. 46: 719-721. DOI: 10.1063/1.95486  0.334
1981 Tsumita N, Melngailis J, Hawryluk AM, Smith HI. FABRICATION OF X-RAY MASKS USING ANISOTROPIC ETCHING OF (110) Si AND SHADOWING TECHNIQUES Journal of Vacuum Science & Technology. 19: 1211-1213. DOI: 10.1116/1.571246  0.371
1981 Hawryluk AM, Ceglio NM, Price RH, Melngailis J, Smith HI. Gold transmission gratings with submicrometer periods and thicknesses ≳0.5 μm Journal of Vacuum Science and Technology. 19: 897-900. DOI: 10.1116/1.571230  0.331
1973 Smith HI, Melngailis J, Williamson RC, Brogan WT. Abstract: Ion Beam Etching of Surface Gratings Journal of Vacuum Science and Technology. 10: 1127-1127. DOI: 10.1116/1.1318487  0.421
1973 Melngailis J, Ryan JL, Harman TC. Electron radiation damage and annealing of Hg1-xCdxTe at low temperatures Journal of Applied Physics. 44: 2647-2651. DOI: 10.1063/1.1662628  0.334
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