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Arezou Khoshakhlagh, Ph.D. - Publications

Affiliations: 
2010 Optical Science and Engineering University of New Mexico, Albuquerque, NM, United States 
Area:
Infrared imaging
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34 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Ting DZ, Rafol SB, Khoshakhlagh A, Soibel A, Keo SA, Fisher AM, Pepper BJ, Hill CJ, Gunapala SD. InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors. Micromachines. 11. PMID 33114617 DOI: 10.3390/mi11110958  0.394
2013 Ting DZ-, Soibel A, Khoshakhlagh A, Nguyen J, Höglund L, Keo SA, Mumolo JM, Gunapala SD. Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector Applied Physics Letters. 102: 121109. DOI: 10.1063/1.4798551  0.475
2010 Myers SA, Khoshakhlagh A, Mailfert J, Wanninkhof P, Plis E, Kutty MN, Kim HS, Gautam N, Klein B, Smith EPG, Krishna S. Performance of InAsSb-based infrared detectors with nBn design Proceedings of Spie. 7808: 780805. DOI: 10.1117/12.862295  0.741
2010 Wong AF, Nelson MJ, Plis EA, Skrutskie MF, Yao L, Vandervelde T, Krishna S, Kim H, Khoshakhlagh A, Myers SA. Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observation Proceedings of Spie - the International Society For Optical Engineering. 7742. DOI: 10.1117/12.857786  0.711
2010 Khoshakhlagh A, Myers S, Plis E, Kutty MN, Klein B, Gautam N, Kim H, Smith EPG, Rhiger D, Johnson SM, Krishna S. Mid-wavelength InAsSb detectors based on nBn design Proceedings of Spie. 7660. DOI: 10.1117/12.850428  0.764
2010 Kim HS, Plis E, Gautam N, Khoshakhlagh A, Myers S, Kutty MN, Sharma Y, Dawson LR, Krishna S. SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors Proceedings of Spie. 7660. DOI: 10.1117/12.850284  0.761
2010 Gautam N, Plis E, Kim HS, Kutty MN, Myers S, Khoshakhlagh A, Dawson LR, Krishna S. Heterostructure band engineering of type-II InAs/GaSb superlattice based longwave infrared photodiodes using unipolar current blocking barriers Proceedings of Spie. 7660. DOI: 10.1117/12.849889  0.744
2010 Plis E, Khoshakhlagh A, Myers S, Kim HS, Gautam N, Sharma YD, Krishna S, Lee SJ, Noh SK. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3G13-C3G18. DOI: 10.1116/1.3276429  0.76
2010 Khoshakhlagh A, Myers S, Kim H, Plis E, Gautam N, Lee SJ, Noh SK, Dawson LR, Krishna S. Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs Ieee Journal of Quantum Electronics. 46: 959-964. DOI: 10.1109/Jqe.2010.2041635  0.782
2010 Khoshakhlagh A, Jaeckel F, Hains C, Rodriguez JB, Dawson LR, Malloy K, Krishna S. Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate Applied Physics Letters. 97: 051109. DOI: 10.1063/1.3457908  0.521
2010 Plis E, Khoshakhlagh A, Myers S, Gautam N, Sharma YD, Dawson LR, Krishna S, Lee SJ, Noh SK. Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation Applied Physics Letters. 96: 033502. DOI: 10.1063/1.3275711  0.753
2010 Kutty MN, Plis E, Khoshakhlagh A, Myers S, Gautam N, Smolev S, Sharma YD, Dawson R, Krishna S, Lee SJ, Noh SK. Study of surface treatments on InAs/GaSb superlattice lwir detectors Journal of Electronic Materials. 39: 2203-2209. DOI: 10.1007/S11664-010-1242-0  0.649
2010 Myers S, Plis E, Kim HS, Khoshakhlagh A, Gautam N, Lee SJ, Noh SK, Krishna S. Heterostructure engineering in Type II InAs/GaSb strained layer superlattices Physica Status Solidi (C). 7: 2506-2509. DOI: 10.1002/Pssc.200983869  0.754
2009 Kim HS, Plis E, Myers S, Khoshakhlagh A, Gautam N, Kutty MN, Sharma YD, Dawson LR, Krishna S. Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation Proceedings of Spie. 7467. DOI: 10.1117/12.826775  0.754
2009 Khoshakhlagh A, Kim HS, Myers S, Gautam N, Lee SJ, Plis E, Noh SK, Dawson LR, Krishna S. Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design Proceedings of Spie. 7298. DOI: 10.1117/12.818419  0.749
2009 Myers S, Plis E, Khoshakhlagh A, Kim HS, Sharma Y, Dawson R, Krishna S, Gin A. The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors Applied Physics Letters. 95: 121110. DOI: 10.1063/1.3230069  0.756
2009 Gradkowski K, Ochalski TJ, Williams DP, Tatebayashi J, Khoshakhlagh A, Balakrishnan G, O'Reilly EP, Huyet G, Dawson LR, Huffaker DL. Optical transition pathways in type-II Ga(As)Sb quantum dots Journal of Luminescence. 129: 456-460. DOI: 10.1016/J.Jlumin.2008.11.012  0.383
2009 Khoshakhlagh A, Plis E, Myers S, Sharma YD, Dawson LR, Krishna S. Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (̃8 μm) infrared detection Journal of Crystal Growth. 311: 1901-1904. DOI: 10.1016/J.Jcrysgro.2008.11.027  0.509
2009 Plis E, Myers S, Khoshakhlagh A, Kim HS, Sharma Y, Gautam N, Dawson R, Krishna S. InAs/GaSb strained layer superlattice detectors with nBn design Infrared Physics & Technology. 52: 335-339. DOI: 10.1016/J.Infrared.2009.09.008  0.782
2008 Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061  0.392
2008 Huang SH, Balakrishnan G, Khoshakhlagh A, Dawson LR, Huffaker DL. Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate Applied Physics Letters. 93. DOI: 10.1063/1.2970997  0.386
2007 Khoshakhlagh A, Rodriguez JB, Plis E, Bishop GD, Sharma YD, Kim HS, Dawson LR, Krishna S. Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors Applied Physics Letters. 91: 263504. DOI: 10.1063/1.2824819  0.708
2007 Tatebayashi J, Khoshakhlagh A, Huang SH, Balakrishnan G, Dawson LR, Huffaker DL, Bussian DA, Htoon H, Klimov V. Lasing characteristics of GaSbGaAs self-assembled quantum dots embedded in an InGaAs quantum well Applied Physics Letters. 90. DOI: 10.1063/1.2752018  0.423
2007 Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL. GaSbGaAs type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters. 90. DOI: 10.1063/1.2734492  0.439
2007 Huang SH, Balakrishnan G, Mehta M, Khoshakhlagh A, Dawson LR, Huffaker DL, Li P. Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb Applied Physics Letters. 90. DOI: 10.1063/1.2723649  0.456
2007 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials Journal of Crystal Growth. 303: 449-455. DOI: 10.1016/J.Jcrysgro.2006.12.032  0.378
2006 Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL. Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si Mrs Proceedings. 934. DOI: 10.1557/Proc-0934-I09-05  0.398
2006 Balakrishnan G, Jallipalli A, Rotella P, Huang S, Khoshakhlagh A, Amtout A, Krishna S, Dawson LR, Huffaker DL. Room-temperature optically pumped (Al)GaSb vertical-cavity surface-emitting laser monolithically grown on an Si(1 0 0) substrate Ieee Journal On Selected Topics in Quantum Electronics. 12: 1636-1641. DOI: 10.1109/Jstqe.2006.885342  0.586
2006 Mehta M, Balakrishnan G, Huang S, Khoshakhlagh A, Jallipalli A, Patel P, Kutty MN, Dawson LR, Huffaker DL. GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays Applied Physics Letters. 89. DOI: 10.1063/1.2396897  0.459
2006 Tatebayashi J, Khoshakhlagh A, Huang SH, Dawson LR, Balakrishnan G, Huffaker DL. Formation and optical characteristics of strain-relieved and densely stacked GaSbGaAs quantum dots Applied Physics Letters. 89. DOI: 10.1063/1.2390654  0.409
2006 Balakrishnan G, Tatebayashi J, Khoshakhlagh A, Huang SH, Jallipalli A, Dawson LR, Huffaker DL. III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs Applied Physics Letters. 89. DOI: 10.1063/1.2362999  0.405
2006 Huang SH, Balakrishnan G, Khoshakhlagh A, Jallipalli A, Dawson LR, Huffaker DL. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs Applied Physics Letters. 88. DOI: 10.1063/1.2172742  0.417
2006 Balakrishnan G, Huang SH, Khoshakhlagh A, Jallipalli A, Rotella P, Amtout A, Krishna S, Haines CP, Dawson LR, Huffaker DL. Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate Electronics Letters. 42: 350-352. DOI: 10.1049/El:20064286  0.592
2005 Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Conlin P, Huffaker DL. High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1010-1012. DOI: 10.1116/1.1924424  0.377
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