| Year |
Citation |
Score |
| 2020 |
Fan Z, Yaddanapudi K, Bunk R, Mahajan S, Woodall JM. Interface studies of molecular beam epitaxy (MBE) grown ZnSe–GaAs heterovalent structures Journal of Applied Physics. 127: 245701. DOI: 10.1063/5.0008780 |
0.417 |
|
| 2020 |
Wang X, Jiang L, Zhang D, Rupert TJ, Beyerlein IJ, Mahajan S, Lavernia EJ, Schoenung JM. Revealing the deformation mechanisms for room-temperature compressive superplasticity in nanocrystalline magnesium Materialia. 11: 100731. DOI: 10.1016/J.Mtla.2020.100731 |
0.333 |
|
| 2020 |
Wang X, Jiang L, Cooper C, Yu K, Zhang D, Rupert TJ, Mahajan S, Beyerlein IJ, Lavernia EJ, Schoenung JM. Toughening magnesium with gradient twin meshes Acta Materialia. 195: 468-481. DOI: 10.1016/J.Actamat.2020.05.021 |
0.338 |
|
| 2020 |
Hu Y, Turlo V, Beyerlein IJ, Mahajan S, Lavernia EJ, Schoenung JM, Rupert TJ. Disconnection-mediated twin embryo growth in Mg Acta Materialia. 194: 437-451. DOI: 10.1016/J.Actamat.2020.04.010 |
0.399 |
|
| 2019 |
Jiang L, Kumar MA, Beyerlein IJ, Wang X, Zhang D, Wu C, Cooper C, Rupert TJ, Mahajan S, Lavernia EJ, Schoenung JM. Twin formation from a twin boundary in Mg during in-situ nanomechanical testing Materials Science and Engineering: A. 759: 142-153. DOI: 10.1016/J.Msea.2019.04.117 |
0.363 |
|
| 2019 |
Lange AP, Mahajan S. Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (1 1 1)Si Journal of Crystal Growth. 511: 106-117. DOI: 10.1016/J.Jcrysgro.2019.01.040 |
0.422 |
|
| 2018 |
Wang X, Jiang L, Zhang D, Beyerlein IJ, Mahajan S, Rupert TJ, Lavernia EJ, Schoenung JM. Reversed compressive yield anisotropy in magnesium with microlaminated structure Acta Materialia. 146: 12-24. DOI: 10.1016/J.Actamat.2017.12.025 |
0.323 |
|
| 2017 |
Patil-Chaudhari D, Ombaba M, Oh JY, Mao H, Montgomery KH, Lange A, Mahajan S, Woodall JM, Islam MS. Solar Blind Photodetectors Enabled by Nanotextured β-Ga2O3 Films Grown via Oxidation of GaAs Substrates Ieee Photonics Journal. 9: 1-7. DOI: 10.1109/Jphot.2017.2688463 |
0.304 |
|
| 2013 |
Mahajan S. Critique of mechanisms of formation of deformation, annealing and growth twins: Face-centered cubic metals and alloys Scripta Materialia. 68: 95-99. DOI: 10.1016/J.Scriptamat.2012.09.011 |
0.44 |
|
| 2012 |
Diaz RE, Sharma R, Jarvis K, Zhang Q, Mahajan S. Direct observation of nucleation and early stages of growth of GaN nanowires Journal of Crystal Growth. 341: 1-6. DOI: 10.1016/J.Jcrysgro.2011.09.028 |
0.566 |
|
| 2011 |
Meng FY, McFelea H, Datta R, Chowdhury U, Werkhoven C, Arena C, Mahajan S. Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN Journal of Applied Physics. 110. DOI: 10.1063/1.3643001 |
0.344 |
|
| 2011 |
Meng FY, Han I, McFelea H, Lindow E, Bertram R, Werkhoven C, Arena C, Mahajan S. Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers Scripta Materialia. 65: 257-260. DOI: 10.1016/J.Scriptamat.2011.04.020 |
0.42 |
|
| 2011 |
Meng FY, Han I, McFelea H, Lindow E, Bertram R, Werkhoven C, Arena C, Mahajan S. Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy Journal of Crystal Growth. 327: 13-21. DOI: 10.1016/J.Jcrysgro.2011.05.020 |
0.487 |
|
| 2011 |
Meng FY, Mahajan S. Dislocation reactions in hetero‐epitaxial (0001) GaN layers Physica Status Solidi (a). 208: 2666-2670. DOI: 10.1002/Pssa.201127140 |
0.315 |
|
| 2010 |
Diaz R, Sharma R, Zaidi Z, Mahajan S. Direct observations of nucleation and growth of III Nitride nanowires Microscopy and Microanalysis. 16: 300-301. DOI: 10.1017/S1431927610062392 |
0.422 |
|
| 2009 |
Diaz RE, Sharma R, Mahajan S, Jarvis K. In-situ catalytic growth of gallium nitride nanowires Microscopy and Microanalysis. 15: 1162-1163. DOI: 10.1017/S1431927609096950 |
0.456 |
|
| 2009 |
Zhu YT, Narayan J, Hirth JP, Mahajan S, Wu XL, Liao XZ. Formation of Single and Multiple Deformation Twins in Nanocrystalline fcc Metals Acta Materialia. 57: 3763-3770. DOI: 10.1016/J.Actamat.2009.04.020 |
0.39 |
|
| 2008 |
Wise A, Nandivada R, Strawbridge B, Carpenter R, Newman N, Mahajan S. [0001] composition modulations in Al0.4Ga0.6N layers grown by molecular beam epitaxy Applied Physics Letters. 92: 261914. DOI: 10.1063/1.2953451 |
0.326 |
|
| 2008 |
Han I, Datta R, Mahajan S, Bertram R, Lindow E, Werkhoven C, Arena C. Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy Scripta Materialia. 59: 1171-1173. DOI: 10.1016/J.Scriptamat.2008.07.046 |
0.352 |
|
| 2007 |
Usikov A, Shapovalova L, Kovalenkov O, Sukhoveev V, Volkova A, Ivantsov V, Dmitriev V, Meng F, Datta R, Mahajan S, Readinger E, Garrett G, Wraback M, Reshchikov M. Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi-layered structures Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2301-2305. DOI: 10.1002/Pssc.200674842 |
0.366 |
|
| 2005 |
Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Journal of Crystal Growth. 279: 13-19. DOI: 10.1016/J.Jcrysgro.2004.12.027 |
0.779 |
|
| 2004 |
Noveski V, Schlesser R, Mahajan S, Beaudoin SP, Sitar Z. Growth Of AlN Crystals On AlN/SiC Seeds By AlN Powder Sublimation In Nitrogen Atmosphere Mrs Internet Journal of Nitride Semiconductor Research. 9. DOI: 10.1557/S1092578300000375 |
0.778 |
|
| 2004 |
Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1351-1355. DOI: 10.1116/1.1705644 |
0.334 |
|
| 2004 |
Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy Physical Review B. 69. DOI: 10.1103/Physrevb.69.041305 |
0.3 |
|
| 2004 |
Rao M, Kim D, Mahajan S. Compositional dependence of phase separation in InGaN layers Applied Physics Letters. 85: 1961-1963. DOI: 10.1063/1.1791327 |
0.382 |
|
| 2004 |
Tolle J, Kouvetakis J, Kim DW, Mahajan S, Bell A, Ponce FA, Tsong IST, Kottke ML, Chen ZD. Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer Applied Physics Letters. 84: 3510-3512. DOI: 10.1063/1.1738944 |
0.404 |
|
| 2004 |
Noveski V, Schlesser R, Mahajan S, Beaudoin S, Sitar Z. Mass transfer in AlN crystal growth at high temperatures Journal of Crystal Growth. 264: 369-378. DOI: 10.1016/J.Jcrysgro.2004.01.028 |
0.767 |
|
| 2003 |
Noveski V, Schlesser R, Freitas J, Mahajan S, Beaudoin S, Sitar Z. Vapor phase transport of AlN in an RF heated reactor: Low and high temperature studies Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y2.8 |
0.773 |
|
| 2003 |
Hayes JR, Kim D, Meidia H, Mahajan S. Thermal stability of TaN Schottky contacts on n-GaN Acta Materialia. 51: 653-663. DOI: 10.1016/S1359-6454(02)00444-5 |
0.353 |
|
| 2003 |
Usikov AS, Kim DW, Pechnikov AI, Ruban YV, Mastro MA, Melnik Y, Soukhoveev VA, Shapovalova YV, Kovalenkov OV, Gainer GH, Mahajan S, Dmitriev VA. Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates Physica Status Solidi C: Conferences. 2580-2584. DOI: 10.1002/Pssc.200303331 |
0.426 |
|
| 2002 |
Skromme B, Palle KC, Mikhov MK, Meidia H, Mahajan S, Huang XR, Vetter WM, Dudley M, Moore K, Smith S, Gehoski T. Effects of Structural Defects on Diode Properties in 4H-SiC Mrs Proceedings. 742: 181-186. DOI: 10.1557/Proc-742-K3.4 |
0.345 |
|
| 2002 |
Narayanan V, Lorenz K, Kim W, Mahajan S. Gallium nitride epitaxy on (0001) sapphire Philosophical Magazine. 82: 885-912. DOI: 10.1080/01418610110095698 |
0.422 |
|
| 2002 |
Narayanan V, Mahajan S, Bachmann KJ, Woods V, Dietz N. Stacking faults and twins in gallium phosphide layers grown on silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 82: 685-698. DOI: 10.1080/01418610110082034 |
0.398 |
|
| 2002 |
Mahajan S. Origins of micropipes in SiC crystals Applied Physics Letters. 80: 4321-4323. DOI: 10.1063/1.1484555 |
0.348 |
|
| 2002 |
Narayanan V, Mahajan S, Bachmann KJ, Woods V, Dietz N. Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy Acta Materialia. 50: 1275-1287. DOI: 10.1016/S1359-6454(01)00408-6 |
0.373 |
|
| 2002 |
Gonsalves M, Kim W, Narayanan V, Mahajan S. Influence of AlN nucleation layer growth conditions on quality of GaN layers deposited on (0001) sapphire Journal of Crystal Growth. 240: 347-354. DOI: 10.1016/S0022-0248(02)00906-5 |
0.435 |
|
| 2001 |
Westmeyer AN, Mahajan S. Periodic composition modulations in InGaN epitaxial layers Applied Physics Letters. 79: 2710-2712. DOI: 10.1063/1.1411984 |
0.318 |
|
| 2001 |
Narayanan V, Lorenz K, Kim W, Mahajan S. Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 78: 1544-1546. DOI: 10.1063/1.1352699 |
0.399 |
|
| 2001 |
Cerreta E, Mahajan S. Formation of deformation twins in TiAl Acta Materialia. 49: 3803-3809. DOI: 10.1016/S1359-6454(01)00264-6 |
0.321 |
|
| 2001 |
Hayes JR, Zhang X, Meier DL, Mahajan S. Origins of defect structures in dendritic web silicon Journal of Crystal Growth. 233: 451-459. DOI: 10.1016/S0022-0248(01)01620-7 |
0.397 |
|
| 2001 |
Westmeyer AN, Mahajan S. Phase Separation in InGaN Epitaxial Layers Physica Status Solidi B-Basic Solid State Physics. 228: 161-164. DOI: 10.1002/1521-3951(200111)228:1<161::Aid-Pssb161>3.0.Co;2-2 |
0.354 |
|
| 2000 |
Narayanan V, Mahajan S, Bachmann KJ, Woods V, Dietz N. Island coalescence induced substructure within GaP epitaxial layers grown on (001), (111), (110) and (113) Si Materials Research Society Symposium - Proceedings. 618: 53-58. DOI: 10.1557/Proc-618-53 |
0.411 |
|
| 2000 |
Narayanan V, Mahajan S, Sukidit N, Bachmann KJ, Wooos V, Dietz N. Orientation mediated self-assembled gallium phosphide islands grown on silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 80: 555-572. DOI: 10.1080/01418610008212068 |
0.41 |
|
| 2000 |
Lorenz K, Gonsalves M, Kim W, Narayanan V, Mahajan S. Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 77: 3391-3393. DOI: 10.1063/1.1328091 |
0.456 |
|
| 2000 |
Mahajan S. Defects in semiconductors and their effects on devices Acta Materialia. 48: 137-149. DOI: 10.1016/S1359-6454(99)00292-X |
0.367 |
|
| 1999 |
Sukidi N, Bachmann KJ, Narayanan V, Mahajan S. Initial stages of heteroepitaxy of GaP on selected silicon surfaces Journal of the Electrochemical Society. 146: 1147-1150. DOI: 10.1149/1.1391736 |
0.429 |
|
| 1999 |
Westmeyer AN, Mahajan S, Bathey BB, Neugabauer G, Jessup J, Meier DL. Variations in dislocation density with length in web silicon Materials Science and Engineering B-Advanced Functional Solid-State Materials. 65: 177-183. DOI: 10.1016/S0921-5107(99)00224-X |
0.396 |
|
| 1999 |
Narayanan V, Sukidi N, Bachmann KJ, Mahajan S. Origins of defects in self assembled GaP islands grown on Si(001) and Si(111) Thin Solid Films. 357: 53-56. DOI: 10.1016/S0040-6090(99)00474-5 |
0.356 |
|
| 1998 |
Narayanan V, Sukidi N, Hu C, Dietz N, Bachmann KJ, Mahajan S, Shingubara S. Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates Materials Science and Engineering B. 207-209. DOI: 10.1016/S0921-5107(98)00169-X |
0.381 |
|
| 1997 |
Mahajan S, Pande CS, Imam MA, Rath BB. Formation of annealing twins in f.c.c. crystals Acta Materialia. 45: 2633-2638. DOI: 10.1016/S1359-6454(96)00336-9 |
0.396 |
|
| 1997 |
Mahajan S. Defects in epitaxial layers of compound semiconductors grown by OMVPE and MBE techniques Progress in Materials Science. 42: 341-355. DOI: 10.1016/S0079-6425(97)00023-6 |
0.421 |
|
| 1997 |
Morelhão SL, Mahajan S. An X-ray topography study of the dendritic web silicon growth process Journal of Crystal Growth. 177: 41-51. DOI: 10.1016/S0022-0248(96)00809-3 |
0.336 |
|
| 1996 |
Mahajan S. Large lattice mismatch epitaxy Materials Research Society Symposium - Proceedings. 410: 3-15. DOI: 10.1557/Proc-410-3 |
0.398 |
|
| 1996 |
Hu C, Mahajan S, Dabkowski FP, Pendse DR, Barrett RJ, Chin AK. Evaluations of As-fabricated GaN-based light-emitting diodes Proceedings of Spie. 2886: 59-66. DOI: 10.1117/12.251879 |
0.341 |
|
| 1996 |
Yang JW, Sun CJ, Chen Q, Anwar MZ, Khan MA, Nikishin SA, Seryogin GA, Osinsky AV, Chernyak L, Temkin H, Hu C, Mahajan S. High quality GaN–InGaN heterostructures grown on (111) silicon substrates Applied Physics Letters. 69: 3566-3568. DOI: 10.1063/1.117247 |
0.405 |
|
| 1996 |
George T, Jacobsohn E, Pike WT, Chang-Chien P, Khan MA, Yang JW, Mahajan S. Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates Applied Physics Letters. 68: 337-339. DOI: 10.1063/1.116708 |
0.462 |
|
| 1996 |
Sun CJ, Yang JW, Chen Q, Asif Khan M, George T, Chang-Chien P, Mahajan S. Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition Applied Physics Letters. 68: 1129-1131. DOI: 10.1063/1.115735 |
0.307 |
|
| 1995 |
Vardya R, Mahajan S. Mechanism of dislocation climb in binary and mixed III-V semiconductors Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 71: 465-472. DOI: 10.1080/01418619508244462 |
0.318 |
|
| 1995 |
Bloor D, Brook RJ, Flemings MC, Mahajan S, Disalvo F. The Encyclopedia of Advanced Materials Physics Today. 48: 90-92. DOI: 10.1063/1.2808264 |
0.323 |
|
| 1995 |
Yang JW, Kuznia JN, Chen QC, Khan MA, George T, Graef MD, Mahajan S. Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates Applied Physics Letters. 67: 3759-3761. DOI: 10.1063/1.115374 |
0.434 |
|
| 1995 |
Lee K, Philips BA, McFadden RS, Mahajan S. Microstructural characteristics of mixed III–V epitaxial layers Materials Science and Engineering B-Advanced Functional Solid-State Materials. 32: 231-237. DOI: 10.1016/0921-5107(95)03013-1 |
0.344 |
|
| 1995 |
Vardya R, Mahajan S, Bhat R. Microstructural characteristics of (110) InGaAs layers grown by OMVPE Materials Science and Engineering B-Advanced Functional Solid-State Materials. 33: 148-155. DOI: 10.1016/0921-5107(94)01178-8 |
0.445 |
|
| 1994 |
Lee K, Mahajan S, Johnson WC. Stability of phase-separated microstructure in LPE-grown InGaAs epitaxial layers Materials Science and Engineering B-Advanced Functional Solid-State Materials. 28: 209-213. DOI: 10.1016/0921-5107(94)90049-3 |
0.387 |
|
| 1994 |
Philips B, Norman A, Seong T, Mahajan S, Booker G, Skowronski M, Harbison J, Keramidas V. Mechanism for CuPt-type ordering in mixed III–V epitaxial layers Journal of Crystal Growth. 140: 249-263. DOI: 10.1016/0022-0248(94)90297-6 |
0.36 |
|
| 1993 |
McFadden R, Skowronski M, Mahajan S. Influence of Growth Temperature on Ordering in InGaAs Grown on (001) InP USING Tertiarybutylarsine Source MOCVD Mrs Proceedings. 326. DOI: 10.1557/Proc-326-287 |
0.393 |
|
| 1993 |
Lee K, Mahajan S, Johnson WC. Phase Separated Microstructure and its Stability in InGaAs Epitaxial Layers Grown by LPE Mrs Proceedings. 326: 109. DOI: 10.1557/Proc-326-109 |
0.385 |
|
| 1993 |
Beam EA, Mahajan S, Coleman JJ. Phase separation in In0.3Ga0.7As epitaxial layers Materials Letters. 16: 29-32. DOI: 10.1016/0167-577X(93)90178-Z |
0.314 |
|
| 1992 |
McDevitt TL, Mahajan S, Laughlin DE, Bonner WA, Keramidas VG. Two-dimensional phase separation in In1-xGaxAsyP1-y epitaxial layers. Physical Review. B, Condensed Matter. 45: 6614-6622. PMID 10000421 DOI: 10.1103/Physrevb.45.6614 |
0.387 |
|
| 1992 |
Li Z, Bauer CL, Mahajan S, Milnes AG. Degradation by electromigration in passivated Al-1 wt% Si thin films Applied Physics Letters. 61: 276-278. DOI: 10.1063/1.107936 |
0.309 |
|
| 1991 |
Rai RS, Mahajan S, McDevitt S, Johnson CJ. Characterization of CdTe, (Cd,Zn)Te, and Cd(Te,Se) single crystals by transmission electron microscopy Journal of Vacuum Science & Technology B. 235: 1892-1896. DOI: 10.1063/1.41070 |
0.304 |
|
| 1991 |
Genut M, Li Z, Bauer CL, Mahajan S, Tang PF, Milnes AG. Characterization of the early stages of electromigration at grain boundary triple junctions Applied Physics Letters. 58: 2354-2356. DOI: 10.1063/1.104869 |
0.351 |
|
| 1991 |
Rai RS, Mahajan S, Michel DJ, Smith HH, McDevitt S, Johnson CJ. Deformation behavior of CdTe and (Cd, Zn)Te single crystals between 200 and 600 °C Materials Science and Engineering B-Advanced Functional Solid-State Materials. 10: 219-225. DOI: 10.1016/0921-5107(91)90129-J |
0.376 |
|
| 1991 |
Basile DP, Bauer CL, Mahajan S, Milnes AG, Jackson TN, DeGelormo J. Microstructure and electrical characteristics of tungsten and WSix contacts to GaAs Materials Science and Engineering B. 10: 171-179. DOI: 10.1016/0921-5107(91)90123-D |
0.365 |
|
| 1991 |
Ho HL, Mahajan S, Bauer CL, Laughlin DE. Ordered structures in epitaxial nickel silicide films grown on (111) silicon substrates Materials Science and Engineering B. 10: 107-115. DOI: 10.1016/0921-5107(91)90116-D |
0.354 |
|
| 1991 |
Shannette KA, Mahajan S, Milnes AG, Bauer CL, Cox HM, Bhat R. Field-induced filamentation between gold contacts deposited onto (001) GaAs epitaxial layers Materials Science and Engineering B. 10: 7-17. DOI: 10.1016/0921-5107(91)90088-D |
0.342 |
|
| 1991 |
Bao XJ, Schlesinger TE, Bonner WA, Nahory RE, Gilchrist HL, Berry E, Beam EA, Mahajan S. Deep levels in bulk LEC single crystal IxGa1-xAs Journal of Electronic Materials. 20: 207-210. DOI: 10.1007/Bf02653325 |
0.376 |
|
| 1990 |
Mcdevitt TL, Mahajan S, Laughlin DE, Bonner WA, Keramidas VG. Surface Phase Separation and Ordering in Compound Semiconductor Alloys Mrs Proceedings. 198: 609. DOI: 10.1557/Proc-198-609 |
0.404 |
|
| 1990 |
Cox HM, Aspnes DE, Allen SJ, Bastos P, Hwang DM, Mahajan S, Shahid MA, Morais PC. Role of step‐flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire‐like arrays Applied Physics Letters. 57: 611-613. DOI: 10.1063/1.103613 |
0.381 |
|
| 1990 |
Mcdevitt TL, Mahajan S, Laughlin DE, Turco FS, Tamargo MC, Shahid MA, Bonner WA, Keramidas VG. Microstructural Characteristics Of Phase Separated And Ordered Epitaxial Layers Of Iii-V Compound Semiconductors Defect Control in Semiconductors. 1079-1084. DOI: 10.1016/B978-0-444-88429-9.50022-7 |
0.453 |
|
| 1990 |
Beam EA, Mahajan S, Bonner WA. Dislocation replication and annihilation in InP homoepitaxial layers grown by liquid phase epitaxy Materials Science and Engineering B. 7: 83-101. DOI: 10.1016/0921-5107(90)90012-Z |
0.475 |
|
| 1989 |
Mcdevitt S, John DR, Sepich JL, Bowers KA, Schetzina JF, Rai RS, Mahajan S. Growth and Characterization of CDTE and CDTE Alloys Mrs Proceedings. 161: 15. DOI: 10.1557/Proc-161-15 |
0.41 |
|
| 1989 |
Ho HL, Bauer CL, Mahajan S. Evolution of Stress During Heteroepitaxial Growth of NiSi 2 on (001) and (111) Silicon Substrates Mrs Proceedings. 160: 249. DOI: 10.1557/Proc-160-249 |
0.363 |
|
| 1989 |
Stojanoff V, Shahid MA, McDevitt TL, Mahajan S, Schlesinger TE, Bonner WA. Influence of growth conditions on properties of InP homoepitaxial layers grown by liquid phase epitaxy Materials Science and Engineering B. 3: 279-285. DOI: 10.1016/0921-5107(89)90022-6 |
0.419 |
|
| 1989 |
Mahajan S. Growth- and processing-induced defects in semiconductors Progress in Materials Science. 33: 1-84. DOI: 10.1016/0079-6425(89)90003-0 |
0.36 |
|
| 1988 |
Shahid MA, Mahajan S. Long-range atomic order in GaxIn1-xAsyP1-y epitaxial layers [(x,y)=(0.47,1), (0.37,0.82), (0.34,0.71), and (0.27,0.64)] Physical Review B. 38: 1344-1350. DOI: 10.1103/Physrevb.38.1344 |
0.302 |
|
| 1988 |
Dabkowski FP, Gavrilovic P, Meehan K, Stutius W, Williams JE, Shahid MA, Mahajan S. Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001) GaAs substrates by zinc diffusion Applied Physics Letters. 52: 2142-2144. DOI: 10.1063/1.99558 |
0.346 |
|
| 1988 |
Gavrilovic P, Dabkowski F, Meehan K, Williams J, Stutius W, Hsieh K, Holonyak N, Shahid M, Mahajan S. Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing Journal of Crystal Growth. 93: 426-433. DOI: 10.1016/0022-0248(88)90563-5 |
0.376 |
|
| 1987 |
Elias KR, Mahajan S, Bauer CL, Milnes AG, Bonner WA. Spreading of Au dots on InP surfaces Journal of Applied Physics. 62: 1245-1250. DOI: 10.1063/1.339676 |
0.319 |
|
| 1986 |
Kim T, Chung D, Mahajan S. Metallurgical Reactions in Au/Ge/Au Contact to Gallium Arsenide Mrs Proceedings. 77: 369. DOI: 10.1557/Proc-77-369 |
0.353 |
|
| 1986 |
McDevitt S, Dean BE, Ryding DG, Scheltens FJ, Mahajan S. Characterization of CdTe and (Cd,Zn)Te single-crystal substrates Materials Letters. 4: 451-454. DOI: 10.1016/0167-577X(86)90035-2 |
0.405 |
|
| 1984 |
Mahajan S, Chin AK, Zipfel CL, Brasen D, Chin BH, Tung RT, Nakahara S. The origin of dark spot defects in InP InGaAsP aged light emitting diodes Materials Letters. 2: 184-188. DOI: 10.1016/0167-577X(84)90020-X |
0.312 |
|
| 1984 |
Mahajan S, Dutt BV, Temkin H, Cava RJ, Bonner WA. Spinodal decomposition in InGaAsP epitaxial layers Journal of Crystal Growth. 68: 589-595. DOI: 10.1016/0022-0248(84)90466-4 |
0.359 |
|
| 1984 |
Mahajan S, Keramidas VG, Wernick JH. InP and InGaAsP Semiconducting Materials for Optical Communications Jom. 36: 37-41. DOI: 10.1007/Bf03338527 |
0.371 |
|
| 1982 |
Mahajan S, Keramidas VG, Bonner WA. The Influence of Intermittent Growth Procedures on Dislocation Densities in InP Epi‐Layers Journal of the Electrochemical Society. 129: 1556-1559. DOI: 10.1149/1.2124205 |
0.359 |
|
| 1982 |
Chin AK, Zipfel CL, Mahajan S, Ermanis F, DiGiuseppe MA. Cathodoluminescence evaluation of dark spot defects in InP/InGaAsP light‐emitting diodes Applied Physics Letters. 41: 555-557. DOI: 10.1063/1.93602 |
0.321 |
|
| 1982 |
Mahajan S, Brasen D, Digiuseppe MA, Keramidas VG, Temkin H, Zipfel CL, Bonner WA, Schwartz GP. Manifestations of melt-carry-over in InP and InGaAsP layers grown by liquid phase epitaxy Applied Physics Letters. 41: 266-269. DOI: 10.1063/1.93496 |
0.368 |
|
| 1982 |
Temkin H, Mahajan S, DiGiuseppe MA, Dentai AG. Optically induced catastrophic degradation in InGaAsP/InP layers Applied Physics Letters. 40: 562-565. DOI: 10.1063/1.93180 |
0.302 |
|
| 1982 |
Reynaud F, Lasserre A, Bonner WA, Mahajan S. Radiation damage in InP single crystals irradiated between 200 and 320°C in a high voltage electron microscope (2 MV) Scripta Metallurgica. 16: 567-570. DOI: 10.1016/0036-9748(82)90271-X |
0.31 |
|
| 1981 |
Mahajan S, Keramidas VG, Chin AK, Bonner WA, Ballman AA. Perfection of homoepitaxial layers grown on (001) InP substrates Applied Physics Letters. 38: 255-258. DOI: 10.1063/1.92335 |
0.359 |
|
| 1980 |
Mahajan S, Jin S, Brasen D. Micro-twinning in a spinodally decomposed FeCrCo alloy Acta Metallurgica. 28: 971-977. DOI: 10.1016/0001-6160(80)90115-7 |
0.386 |
|
| 1980 |
Vaidya S, Mahajan S. ACCOMMODATION AND FORMATION OF left brace 112 OVER BAR 1 right brace TWINS IN Co SINGLE CRYSTALS Acta Metallurgica. 28: 1123-1131. DOI: 10.1016/0001-6160(80)90095-4 |
0.309 |
|
| 1980 |
Gleiter H, Mahajan S, Bachmann KJ. The generation of lattice dislocations by migrating boundaries Acta Metallurgica. 28: 1603-1610. DOI: 10.1016/0001-6160(80)90013-9 |
0.41 |
|
| 1979 |
Chin AK, Temkin H, Mahajan S, Bonner WA, Ballman AA, Dentai AG. Evaluation of defects in InP and InGaAsP by transmission cathodoluminescence Journal of Applied Physics. 50: 5707-5709. DOI: 10.1063/1.326760 |
0.375 |
|
| 1979 |
Mahajan S, Brasen D, Haasen P. Lüders bands in deformed silicon crystals Acta Metallurgica. 27: 1165-1173. DOI: 10.1016/0001-6160(79)90134-2 |
0.402 |
|
| 1978 |
Winter AT, Mahajan S, Brasen D. Weak-beam electron microscopy of faulted dipoles in deformed silicon Philosophical Magazine. 37: 315-326. DOI: 10.1080/01418617808239170 |
0.355 |
|
| 1978 |
Mahajan S, Bachmann KJ, Brasen D, Buehler E. Defects in InP homoepitaxial layers Journal of Applied Physics. 49: 245-248. DOI: 10.1063/1.324338 |
0.355 |
|
| 1977 |
Mahajan S, Chin GY. Reply to comments on twin-twin interactions in FCC crystals Scripta Metallurgica. 11: 173-174. DOI: 10.1016/0036-9748(77)90045-X |
0.314 |
|
| 1977 |
Carpay FMA, Mahajan S, Chin GY, Rubin JJ. The correlation of textural and microstructural changes in deformed molybdenum single crystals Acta Metallurgica. 25: 149-159. DOI: 10.1016/0001-6160(77)90118-3 |
0.356 |
|
| 1976 |
Pinnel MR, Mahajan S, Bennett JE. Influence of thermal treatments on the mechanical properties of an FeCoV alloy (remendur) Acta Metallurgica. 24: 1095-1106. DOI: 10.1016/0001-6160(76)90026-2 |
0.319 |
|
| 1975 |
Mahajan S, Chin GY. Comments on deformation twinning in silver- and copper-alloy crystals Scripta Metallurgica. 9: 815-817. DOI: 10.1016/0036-9748(75)90560-8 |
0.325 |
|
| 1975 |
Carpay FMA, Chin GY, Mahajan S, Rubin JJ. Constrained deformation of molybdenum single crystals Acta Metallurgica. 23: 1473-1478. DOI: 10.1016/0001-6160(75)90157-1 |
0.312 |
|
| 1975 |
Mahajan S. Interrelationship between slip and twinning in B.C.C. crystals Acta Metallurgica. 23: 671-684. DOI: 10.1016/0001-6160(75)90049-8 |
0.389 |
|
| 1974 |
Schwartz LH, Mahajan S, Plewes JT. Spinodal decomposition in a Cu-9 wt% Ni-6 wt% Sn alloy Acta Metallurgica. 22: 601-609. DOI: 10.1016/0001-6160(74)90157-6 |
0.321 |
|
| 1974 |
Mahajan S, Chin GY. The interaction of twins with existing substructure and twins in cobalt-iron alloys Acta Metallurgica. 22: 1113-1119. DOI: 10.1016/0001-6160(74)90066-2 |
0.371 |
|
| 1973 |
Mahajan S, Williams DF. Deformation Twinning in Metals and Alloys International Materials Reviews. 18: 43-61. DOI: 10.1179/Imtlr.1973.18.2.43 |
0.33 |
|
| 1973 |
Mahajan S, Chin GY. Formation of deformation twins in f.c.c. crystals Acta Metallurgica. 21: 1353-1363. DOI: 10.1016/0001-6160(73)90085-0 |
0.379 |
|
| 1973 |
Mahajan S, Chin GY. Twin-slip, twin-twin and slip-twin interactions in Co-8 wt.% Fe alloy single crystals Acta Metallurgica. 21: 173-179. DOI: 10.1016/0001-6160(73)90059-X |
0.348 |
|
| 1972 |
Evans JH, Mahajan S, Eyre BL. Void Formation During Annealing Of Irradiated Molybdenum. Philosophical Magazine. 26: 813-820. DOI: 10.1080/14786437208226957 |
0.327 |
|
| 1972 |
Mahajan S. Nucleation and growth of deformation twins in Mo-35 at. % Re alloy Philosophical Magazine. 26: 161-171. DOI: 10.1080/14786437208221027 |
0.398 |
|
| 1971 |
Mahajan S. Twin-slip and twin-twin interactions in Mo-35 at. % Re alloy Philosophical Magazine. 23: 781-794. DOI: 10.1080/14786437108216988 |
0.333 |
|
| 1969 |
Mahajan S. Twins and complementary twins in shock hardened iron Philosophical Magazine. 19: 199-204. DOI: 10.1080/14786436908217774 |
0.328 |
|
| 1969 |
Mahajan S. Shock‐Induced Substructural Changes in Prestrained Iron Physica Status Solidi (B). 33: 291-299. DOI: 10.1002/Pssb.19690330127 |
0.302 |
|
| Show low-probability matches. |