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Balaji Raghothamachar, Ph.D. - Publications

Affiliations: 
2001 Stony Brook University, Stony Brook, NY, United States 
Area:
Materials Science Engineering
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172 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Huang VW, Liu Y, Raghothamachar B, Dudley M. Upgraded for rapid recognition and fitting of Laue patterns from crystals with unknown orientations. Journal of Applied Crystallography. 56: 1610-1615. PMID 37791354 DOI: 10.1107/S1600576723007926  0.494
2020 Dalmau R, Britt J, Fang HY, Raghothamachar B, Dudley M, Schlesser R. X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates Materials Science Forum. 1004: 63-68. DOI: 10.4028/Www.Scientific.Net/Msf.1004.63  0.67
2020 Ailihumaer T, Raghothamachar B, Dudley M, Chung G, Manning I, Sanchez E. Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals Materials Science Forum. 1004: 44-50. DOI: 10.4028/Www.Scientific.Net/Msf.1004.44  0.667
2020 Ailihumaer T, Peng H, Raghothamachar B, Dudley M, Chung G, Manning I, Sanchez E. Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers Materials Science Forum. 1004: 393-400. DOI: 10.4028/Www.Scientific.Net/Msf.1004.393  0.622
2020 Yang L, Zhao LX, Wu HW, Liu Y, Ailihumaer T, Raghothamachar B, Dudley M. Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer Materials Science Forum. 1004: 387-392. DOI: 10.4028/Www.Scientific.Net/Msf.1004.387  0.673
2020 Manning I, Matsuda Y, Chung G, Sanchez E, Dudley M, Ailihumaer T, Raghothamachar B. Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production Materials Science Forum. 1004: 37-43. DOI: 10.4028/Www.Scientific.Net/Msf.1004.37  0.636
2020 Renz AB, Shah VA, Vavasour OJ, Bonyadi Y, Li F, Dai T, Baker GWC, Hindmarsh S, Han Y, Walker M, Sharma Y, Liu Y, Raghothamachar B, Dudley M, Mawby PA, et al. The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment Journal of Applied Physics. 127: 025704. DOI: 10.1063/1.5133739  0.483
2020 Raghothamachar B, Liu Y, Peng H, Ailihumaer T, Dudley M, Shahedipour-Sandvik FS, Jones KA, Armstrong A, Allerman AA, Han J, Fu H, Fu K, Zhao Y. X-ray topography characterization of gallium nitride substrates for power device development Journal of Crystal Growth. 544: 125709. DOI: 10.1016/J.Jcrysgro.2020.125709  0.65
2020 Peng H, Ailihumaer T, Liu Y, Raghothamachar B, Dudley M. Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography Journal of Crystal Growth. 533: 125458. DOI: 10.1016/J.Jcrysgro.2019.125458  0.631
2020 Peng H, Ailihumaer T, Raghothamachar B, Dudley M. Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers Journal of Electronic Materials. 49: 3472-3480. DOI: 10.1007/S11664-020-07981-7  0.579
2020 Ailihumaer T, Peng H, Raghothamachar B, Dudley M, Chung G, Manning I, Sanchez E. Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials. 49: 3455-3464. DOI: 10.1007/S11664-019-07937-6  0.669
2019 Manning I, Chung GY, Sanchez E, Dudley M, Ailihumaer T, Guo JQ, Goue O, Raghothamachar B. Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers Materials Science Forum. 963: 60-63. DOI: 10.4028/Www.Scientific.Net/Msf.963.60  0.558
2019 Ailihumaer T, Yang Y, Guo JQ, Raghothamachar B, Dudley M. Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method Materials Science Forum. 963: 336-340. DOI: 10.4028/Www.Scientific.Net/Msf.963.336  0.572
2019 Raghothamachar B, Yang Y, Guo JQ, Dudley M. Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment Materials Science Forum. 963: 268-271. DOI: 10.4028/Www.Scientific.Net/Msf.963.268  0.62
2019 Raghothamachar B, Yang Y, Guo J, Dudley M. Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment Ecs Transactions. 92: 131-139. DOI: 10.1149/09207.0131ecst  0.349
2019 Ailihumaer T, Raghothamachar B, Dudley M. Relationship between Basal Plane Dislocation and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals Ecs Transactions. 92: 123-130. DOI: 10.1149/09207.0123ecst  0.401
2019 Ailihumaer T, Yang Y, Guo J, Raghothamachar B, Dudley M. Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials. 48: 3363-3369. DOI: 10.1007/S11664-019-07077-X  0.557
2018 Dalmau R, Craft HS, Britt J, Paisley E, Moody B, Guo JQ, Ji YJ, Raghothamachar B, Dudley M, Schlesser R. High Quality AlN Single Crystal Substrates for AlGaN-Based Devices Materials Science Forum. 924: 923-926. DOI: 10.4028/Www.Scientific.Net/Msf.924.923  0.661
2018 McGuire S, Blasi R, Wu P, Loukas E, Emorhokpor E, Dimov S, Xu XP, Guo JQ, Yang Y, Raghothamachar B, Dudley M. Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope Materials Science Forum. 924: 527-530. DOI: 10.4028/Www.Scientific.Net/Msf.924.527  0.499
2018 Guo JQ, Yang Y, Raghothamachar B, Dudley M, Weit S, Danilewsky AN, McNally PJ, Tanner BR. Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography Materials Science Forum. 924: 176-179. DOI: 10.4028/Www.Scientific.Net/Msf.924.176  0.614
2018 Yang Y, Guo JQ, Raghothamachar B, Dudley M, Weit S, Danilewsky AN, McNally PJ, Tanner BR. In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers Materials Science Forum. 924: 172-175. DOI: 10.4028/Www.Scientific.Net/Msf.924.172  0.643
2018 Manning I, Chung GY, Sanchez E, Yang Y, Guo JQ, Goue O, Raghothamachar B, Dudley M. Optimization of 150 mm 4H SiC Substrate Crystal Quality Materials Science Forum. 924: 11-14. DOI: 10.4028/Www.Scientific.Net/Msf.924.11  0.627
2018 Guo J, Ailihumaer T, Peng H, Raghothamachar B, Dudley M. In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers Ecs Transactions. 86: 75-82. DOI: 10.1149/08612.0075ecst  0.304
2018 Freitas J, Culbertson J, Mahadik N, Tadjer M, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M. Homoepitaxial HVPE GaN: A potential substrate for high performance devices Journal of Crystal Growth. 500: 104-110. DOI: 10.1016/J.Jcrysgro.2018.08.007  0.524
2017 Yang Y, Guo JQ, Raghothamachar B, Dudley M, Chung GY, Sanchez E, Manning I. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers Materials Science Forum. 897: 209-213. DOI: 10.4028/Www.Scientific.Net/Msf.897.209  0.651
2017 Yang Y, Guo J, Raghothamachar B, Chan X, Kim T, Dudley M. Studies on Doping Concentration Variations in 4H-SiC Substrates Using X-ray Contour Mapping Ecs Transactions. 80: 275-283. DOI: 10.1149/08007.0275ECST  0.302
2017 Guo J, Yang Y, Raghothamachar B, Kim T, Dudley M, Kim J. Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial Journal of Crystal Growth. 480: 119-125. DOI: 10.1016/J.Jcrysgro.2017.10.015  0.614
2017 Yang Y, Guo J, Goue OY, Kim JG, Raghothamachar B, Dudley M, Chung G, Sanchez E, Manning I. Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers Journal of Electronic Materials. 47: 1218-1222. DOI: 10.1007/S11664-017-5863-4  0.655
2017 Yang Y, Guo J, Raghothamachar B, Chan X, Kim T, Dudley M. Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC Journal of Electronic Materials. 47: 938-943. DOI: 10.1007/S11664-017-5846-5  0.602
2017 Guo J, Yang Y, Raghothamachar B, Dudley M, Stoupin S. Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography Journal of Electronic Materials. 47: 903-909. DOI: 10.1007/S11664-017-5789-X  0.604
2016 Gao YQ, Zhang HY, Zong YM, Wang HH, Guo JQ, Raghothamachar B, Dudley M, Wang XJ. 150 mm 4H-SiC substrate with low defect density Materials Science Forum. 858: 41-44. DOI: 10.4028/Www.Scientific.Net/Msf.858.41  0.667
2016 Ellison A, Sörman E, Sundqvist B, Magnusson B, Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M. Mapping of threading screw dislocations in 4H n-type SiC wafers Materials Science Forum. 858: 376-379. DOI: 10.4028/Www.Scientific.Net/Msf.858.376  0.58
2016 Quast J, Dudley M, Guo J, Hansen D, Manning I, Mueller S, Raghothamachar B, Sanchez E, Whiteley C, Yang Y. Post-growth micropipe formation in 4H-SiC Materials Science Forum. 858: 367-370. DOI: 10.4028/Www.Scientific.Net/Msf.858.367  0.576
2016 Goue OY, Yang Y, Guo J, Raghothamachar B, Dudley M, Hosteller JL, Myers Ward RL, Klein PB, Gaskill DK. Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography Materials Science Forum. 858: 297-300. DOI: 10.4028/Www.Scientific.Net/Msf.858.297  0.639
2016 Guo JQ, Yang Y, Wu F, Sumakeris JJ, Leonard RT, Goue OY, Raghothamachar B, Dudley M. Using ray tracing simulations for direct determination of burgers vectors of threading mixed dislocations in 4H-SiC c-plane wafers grown by PVT method Materials Science Forum. 858: 15-18. DOI: 10.4028/Www.Scientific.Net/Msf.858.15  0.674
2016 Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Synchrotron X-ray topography analysis of double shockley stacking faults in 4H-SiC wafers Materials Science Forum. 858: 105-108. DOI: 10.4028/Www.Scientific.Net/Msf.858.105  0.591
2016 Dudley M, Wang H, Guo J, Yang Y, Raghothamachar B, Zhang J, Thomas B, Chung G, Sanchez EK, Hansen D, Mueller SG. Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications Mrs Advances. 1: 91-102. DOI: 10.1557/Adv.2016.63  0.613
2016 Yang Y, Guo J, Goue OY, Raghothamachar B, Dudley M, Chung G, Sanchez E, Maning I. Investigation of penetration depth and defect image contrast formation in grazing incidence X-ray topography of 4H-SiC wafers Ecs Transactions. 75: 239-246. DOI: 10.1149/07512.0239ecst  0.6
2016 Goue OY, Guo J, Yang Y, Raghothamachar B, Dudley M. Study of minority carrier lifetime killer by synchrotron X-ray topography Ecs Transactions. 75: 215-231. DOI: 10.1149/07512.0215ecst  0.465
2016 Guo J, Yang Y, Goue GY, Raghothamachar B, Dudley M. Study on the role of thermal stress on prismatic slip of dislocations in 4H-SiC crystals grown by PVT method Ecs Transactions. 75: 163-168. DOI: 10.1149/07512.0163ecst  0.582
2016 Colli A, Attenkofer K, Raghothamachar B, Dudley M. Synchrotron X-Ray Topography for Encapsulation Stress/Strain and Crack Detection in Crystalline Silicon Modules Ieee Journal of Photovoltaics. 6: 1387-1389. DOI: 10.1109/Jphotov.2016.2585022  0.567
2016 Stoupin S, Raghothamachar B, Dudley M, Liu Z, Trakhtenberg E, Lang K, Goetze K, Sullivan J, Macrander A. Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source Aip Conference Proceedings. 1741. DOI: 10.1063/1.4952938  0.54
2016 Padavala B, Frye CD, Wang X, Ding Z, Chen R, Dudley M, Raghothamachar B, Lu P, Flanders BN, Edgar JH. Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate Crystal Growth and Design. 16: 981-987. DOI: 10.1021/Acs.Cgd.5B01525  0.518
2016 Padavala B, Frye C, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar J. Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] Solid State Sciences. 53: 83. DOI: 10.1016/J.Solidstatesciences.2016.02.007  0.494
2016 Padavala B, Frye CD, Wang X, Raghothamachar B, Edgar JH. CVD growth and properties of boron phosphide on 3C-SiC Journal of Crystal Growth. 449: 15-21. DOI: 10.1016/J.Jcrysgro.2016.05.031  0.452
2016 Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.01.013  0.565
2016 Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.12.028  0.749
2016 Guo J, Yang Y, Raghothamachar B, Kim J, Dudley M, Chung G, Sanchez E, Quast J, Manning I. Prismatic Slip in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials. 46: 2040-2044. DOI: 10.1007/S11664-016-5118-9  0.638
2016 Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers Journal of Electronic Materials. 1-5. DOI: 10.1007/S11664-016-4378-8  0.593
2016 Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method Journal of Electronic Materials. 1-6. DOI: 10.1007/S11664-015-4317-0  0.749
2016 Goue OY, Raghothamachar B, Yang Y, Guo J, Dudley M, Kisslinger K, Trunek AJ, Neudeck PG, Spry DJ, Woodworth AA. Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy Journal of Electronic Materials. 45: 2078-2086. DOI: 10.1007/S11664-015-4185-7  0.68
2015 Wu FZ, Wang HH, Yang Y, Guo JQ, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang LH, Su D, Kisslinger K, Stach E. Stacking fault formation via 2D nucleation in PVT grown 4H-SiC Materials Science Forum. 821: 85-89. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.85  0.626
2015 Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Venkatesh TA, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of the origins of half loop arrays and interfacial dislocations observed in homoepitaxial layers of 4H-SiC Materials Science Forum. 821: 319-322. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.319  0.704
2015 Yang Y, Guo J, Goue OY, Wang H, Wu F, Raghothamachar B, Dudley M, Chung G, Quast J, Sanchez E, Manning I, Hansen D. Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers Ecs Transactions. 69: 39-46. DOI: 10.1149/06911.0039ecst  0.511
2015 Guo J, Yang Y, Wu F, Goue OY, Raghothamachar B, Dudley M. Direct determination of burgers vectors of threading mixed dislocations in 4h-SiC c-plane wafers grown By PVT method Ecs Transactions. 69: 33-38. DOI: 10.1149/06911.0033ecst  0.586
2015 Shenai K, Raghothamachar B, Dudley M, Christou A. In-situ characterization of defect dynamics in 4H-SiC power diodes under high-voltage stressing Ecs Transactions. 66: 205-216. DOI: 10.1149/06601.0205ecst  0.508
2015 Padavala B, Frye CD, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar JH. Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide Solid State Sciences. 47: 55-60. DOI: 10.1016/J.Solidstatesciences.2015.03.002  0.557
2014 Wang HH, Wu FZ, Byrapa SY, Yang Y, Raghothamachar B, Dudley M, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen DM, Loboda MJ. Study of v and y shape frank-type stacking faults formation in 4H-SiC Epilayer Materials Science Forum. 778: 332-337. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.332  0.633
2014 Wang HH, Wu FZ, Dudley M, Raghothamachar B, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen DM, Loboda MJ. Measurement of critical thickness for the formation of interfacial dislocations and half loop arrays in 4H-SiC epilayer via X-ray topography Materials Science Forum. 778: 328-331. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.328  0.635
2014 Guo J, Raghothamachar B, Dudley M, Carvajal JJ, Butt A, Pujol MC, Sole RM, Massons J, Aguilo M, Diaz F. Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method Materials Research Society Symposium Proceedings. 1698. DOI: 10.1557/Opl.2014.899  0.619
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ. Direct observation of stacking fault nucleation from deflected threading dislocations with burgers vector c+a in PVT grown 4H-SiC Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.564  0.695
2014 Goue OY, Raghothamachar B, Dudley M, Trunek AJ, Neudeck PG, Woodworth AA, Spry DJ. Structural Characterization of Lateral-grown 6H-SiC a/m-plane seed crystals by hot wall CVD epitaxy Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.563  0.683
2014 Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of relaxation processes and basal plane dislocations in CVD grown homoepitaxial layers of 4H-SiC Ecs Transactions. 64: 213-222. DOI: 10.1149/06407.0213ecst  0.587
2014 Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Characterization of defects in SiC substrates and epilayers Ecs Transactions. 64: 145-152. DOI: 10.1149/06407.0145ecst  0.586
2014 Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Stacking fault formation during homo-Epitaxy of 4H-SiC Ecs Transactions. 64: 125-131. DOI: 10.1149/06407.0125ecst  0.575
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116, 104905 (2014)] Journal of Applied Physics. 116: 169901. DOI: 10.1063/1.4899320  0.658
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images Journal of Applied Physics. 116. DOI: 10.1063/1.4895136  0.674
2014 Wang H, Wu F, Byrappa S, Raghothamachar B, Dudley M, Wu P, Zwieback I, Souzis A, Ruland G, Anderson T. Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Journal of Crystal Growth. 401: 423-430. DOI: 10.1016/J.Jcrysgro.2014.01.078  0.823
2014 Woodworth AA, Neudeck PG, Sayir A, Solá F, Dudley M, Raghothamachar B. Investigation of single crystal 4H-SiC growth by the Solvent-Laser Heated Floating Zone technique Journal of Crystal Growth. 392: 34-40. DOI: 10.1016/J.Jcrysgro.2014.01.050  0.574
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers Journal of Electronic Materials. DOI: 10.1007/S11664-014-3536-0  0.737
2014 Wang H, Dudley M, Wu F, Yang Y, Raghothamachar B, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC Journal of Electronic Materials. DOI: 10.1007/s11664-014-3497-3  0.586
2014 Zhou T, Raghothamachar B, Wu F, Dalmau R, Moody B, Craft S, Schlesser R, Dudley M, Sitar Z. Characterization of threading dislocations in PVT-grown ALN substrates via x-ray topography and ray tracing simulation Journal of Electronic Materials. 43: 838-842. DOI: 10.1007/S11664-013-2968-2  0.739
2014 Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B. Crystal growth and characterization of cubic boron phosphide on silicon carbide Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1575-1581.  0.559
2014 Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B, Schmitt J. Heteroepitaxial growth of boron phosphide on 3C-SiC/Si(100) and AlN/sapphire(0001) substrates Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1583-1590.  0.502
2013 Raghothamachar B, Yang Y, Dalmau R, Moody B, Craft S, Schlesser R, Dudley M, Sita Z. Defect generation mechanisms in PVT-grown AlN single crystal boules Materials Science Forum. 740: 91-94. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.91  0.64
2013 Wu F, Dudley M, Wang H, Byrappa S, Sun S, Raghothamachar B, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. The nucleation and propagation of threading dislocations with c-component of burgers vector in PVT-grown 4H-SiC Materials Science Forum. 740: 217-220. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.217  0.601
2013 Zhou T, Raghothamachar B, Wu F, Dudley M. Grazing incidence X-ray topographic studies of threading dislocations in hydrothermal grown ZnO single crystal substrates Materials Research Society Symposium Proceedings. 1494: 121-126. DOI: 10.1557/Opl.2013.261  0.756
2013 Dudley M, Raghothamachar B, Wang H, Wu F, Byrappa S, Chung G, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Synchrotron X-ray topography studies of the evolution of the defect microstructure in physical vapor transport grown 4H-SiC single crystals Ecs Transactions. 58: 315-324. DOI: 10.1149/05804.0315ecst  0.499
2013 Wang H, Sun S, Dudley M, Byrappa S, Wu F, Raghothamachar B, Chung G, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron X-ray topography and molten KOH etching Journal of Electronic Materials. 42: 794-798. DOI: 10.1007/S11664-013-2527-X  0.823
2013 Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Wu P, Xu X, Zwieback I. Characterization and formation mechanism of six pointed star-type stacking faults in 4H-SiC Journal of Electronic Materials. 42: 787-793. DOI: 10.1007/S11664-012-2379-9  0.818
2013 Yang G, Bolotnikov AE, Fochuk PM, Cui Y, Camarda GS, Hossain A, Kim KH, Raghothamachar B, Roy U, James RB. 'Star-like' defects in Cd-annealed CdZnTe crystals - An experimental study of their origin and formation mechanism Crystal Research and Technology. 48: 221-226. DOI: 10.1002/Crat.201300009  0.351
2012 Byrappa S, Wu F, Wang H, Raghothamachar B, Choi G, Sun S, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Deflection of threading dislocations with burgers vector c/c+a observed in 4H-SiC PVT-Grown substrates with associated stacking faults Materials Science Forum. 717: 347-350. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.347  0.56
2012 Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector in PVT-Grown 4H-SiC Materials Science Forum. 717: 343-346. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.343  0.603
2012 Trunek AJ, Neudeck PG, Woodworth AA, Powell JA, Spry DJ, Raghothamachar B, Dudley M. Lateral growth expansion of 4H/6H-SiC m-plane pseudo fiber crystals by hot wall CVD epitaxy Materials Science Forum. 717: 33-36. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.33  0.593
2012 Wang H, Byrappa S, Wu F, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the hopping Frank-Read source mechanism and observations of prismatic glide in 4H-SiC Materials Science Forum. 717: 327-330. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.327  0.715
2012 Raghothamachar B, Dalmau R, Moody B, Craft S, Schlesser R, Xie J, Collazo R, Dudley M, Sitar Z. Low defect density bulk AlN substrates for high performance electronics and optoelectronics Materials Science Forum. 717: 1287-1290. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1287  0.674
2012 Woodworth AA, Sayir A, Neudeck PG, Raghothamachar B, Dudley M. Characterization of 4H 〈000-1〉 silicon carbide films grown by solvent-laser heated floating zone Materials Research Society Symposium Proceedings. 1433: 113-118. DOI: 10.1557/Opl.2012.1149  0.624
2012 Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Combined application of section and projection topography to defect analysis in PVT-grown 4H-SiC Materials Research Society Symposium Proceedings. 1433: 71-76. DOI: 10.1557/Opl.2012.1142  0.825
2012 Dudley M, Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Synchrotron topography studies of growth and deformation-induced dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 59-70. DOI: 10.1557/Opl.2012.1141  0.831
2012 Wu F, Byrappa S, Wang H, Chen Y, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 41-46. DOI: 10.1557/Opl.2012.1050  0.825
2012 Hossain A, Bolotnikov AE, Camarda GS, Cui Y, Gul R, Kim K, Raghothamachar B, Yang G, James RB. Effects of dislocations and sub-grain boundaries on X-ray response maps of CdZnTe radiation detectors Materials Research Society Symposium Proceedings. 1341: 61-65. DOI: 10.1557/Opl.2011.1274  0.417
2012 Wang H, Wu F, Byrappa S, Sun S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.4704679  0.821
2012 Müller SG, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Journal of Crystal Growth. 352: 39-42. DOI: 10.1016/J.Jcrysgro.2011.10.050  0.819
2011 Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Formation mechanism of stacking faults in PVT 4H-SiC created by deflection of threading dislocations with burgers vector c+a Materials Science Forum. 679: 269-272. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.269  0.666
2011 Bolotnikov AE, Butcher J, Camarda GS, Cui Y, Egarievwe SU, Fochuk P, Gul R, Hamade M, Hossain A, Kim K, Kopach OV, Petryk M, Raghothamachar B, Yang G, James RB. Effects of the networks of subgrain boundaries on spectral responses of thick CdZnTe detectors Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.896223  0.415
2011 Bolotnikov AE, Babalola S, Camarda GS, Cui Y, Gul R, Egarievwe SU, Fochuk PM, Fuerstnau M, Horace J, Hossain A, Jones F, Kim KH, Kopach OV, McCall B, Marchini L, ... Raghothamachar B, et al. Correlations between crystal defects and performance of CdZnTe detectors Ieee Transactions On Nuclear Science. 58: 1972-1980. DOI: 10.1109/Tns.2011.2160283  0.379
2011 Dudley M, Wu F, Wang H, Byrappa S, Raghothamachar B, Choi G, Sun S, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H-SiC Applied Physics Letters. 98. DOI: 10.1063/1.3597226  0.825
2010 Dudley M, Zhang N, Zhang Y, Raghothamachar B, Sanchez EK. Nucleation of c-axis screw dislocations at substrate surface damage during 4H-Silicon carbide homo-epitaxy Materials Science Forum. 645: 295-298. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.295  0.587
2010 Dudley M, Zhang N, Zhang Y, Raghothamachar B, Byrappa S, Choi G, Sanchez EK, Hansen D, Drachev R, Loboda MJ. Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density Materials Science Forum. 645: 291-294. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.291  0.839
2010 Dudley M, Byrappa S, Wang H, Wu F, Zhang Y, Raghothamachar B, Choi G, Sanchez E, Hansen D, Drachev R, Loboda M. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B02-02  0.836
2010 Muller EM, Smedley J, Raghothamachar B, Gaowei M, Keister JW, Ben-Zvi I, Dudley M, Wu Q. Electronic impact of inclusions in diamond Materials Research Society Symposium Proceedings. 1203: 217-222. DOI: 10.1557/Proc-1203-J17-19  0.584
2010 Dhanaraj G, Raghothamachar B, Dudley M. X-ray characterisation of zinc oxide (ZnO) single crystal substrates Materials Research Innovations. 14: 34-37. DOI: 10.1179/143307510X12599329343565  0.653
2010 Bolaños W, Segura M, Cugat J, Carvajal JJ, Mateos X, Pujol MC, Solé R, Díaz F, Aguiló M, Griebner U, Petrov V, Lifante G, Raghothamachar B, Dudley M. Crystal growth and characterization of epitaxial layers of laser and nonlinear optical materials for thin-disk and waveguide laser applications Optical Materials. 32: 1380-1384. DOI: 10.1016/J.Optmat.2010.03.015  0.528
2010 Raghothamachar B, Carvajal JJ, Pujol MC, Mateos X, Solé R, Aguiló M, Díaz F, Dudley M. Synchrotron X-ray topography study of structural defects and strain in epitaxial structures of Yb- and Tm-doped potassium rare-earth double tungstates and their influence on Laser Performance Journal of Electronic Materials. 39: 823-829. DOI: 10.1007/S11664-010-1226-0  0.395
2010 Zhang Y, Chen H, Choi G, Raghothamachar B, Dudley M, Edgar JH, Grasza K, Tymicki E, Zhang L, Su D, Zhu Y. Nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC crystals Journal of Electronic Materials. 39: 799-804. DOI: 10.1007/S11664-010-1105-8  0.617
2010 Dudley M, Byrappa S, Wang H, Wu F, Zhang Y, Raghothamachar B, Choi G, Sanchez EK, Hansen D, Drachev R, Loboda MJ. Analysis of dislocation behavior in low dislocation density, PVT-grown, four-inch silicon carbide single crystals Materials Research Society Symposium Proceedings. 1246: 29-34.  0.468
2009 Raghothamachar B, Sarkar V, Noveski V, Dudley M, Sharan S. A Novel X-ray Diffraction –based Technique for Complete Stress State Mapping of Packaged Silicon Dies Mrs Proceedings. 1158. DOI: 10.1557/Proc-1158-F01-07  0.678
2009 Bolotnikov AE, Babalola S, Camarda GS, Cui Y, Egarievwe SU, Fochuk PM, Hirt M, Hossain AM, Kim K, Kopach OV, Sferraza ND, Sturgess J, Polack K, Raghothamachar B, Yang G, et al. Characterization of a 15-mm-long virtual Frisch-grid CZT detector array Proceedings of Spie - the International Society For Optical Engineering. 7449. DOI: 10.1117/12.826900  0.337
2009 Carvajal JJ, Raghothamachar B, Silvestre O, Chen H, Pujol MC, Petrov V, Dudley M, Aguiló M, Díaz F. Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2and Yb:KLu(WO4)2/KLu(WO4)2Epitaxial Structures Crystal Growth & Design. 9: 653-656. DOI: 10.1021/Cg800835K  0.353
2009 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth. 312: 58-63. DOI: 10.1016/J.Jcrysgro.2009.10.008  0.624
2009 Raghothamachar B, Sarkar V, Noveski V, Dudley M, Sharan S. A novel X-ray diffraction -based technique for complete stress state mapping of packaged silicon dies Materials Research Society Symposium Proceedings. 1158: 13-18.  0.651
2008 Chow CY, Raghothamachar B, Carvajal JJ, Chen H, Dudley M. Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition Mrs Proceedings. 1080. DOI: 10.1557/Proc-1080-O08-01  0.447
2008 Su CH, Lehoczky SL, Raghothamachar B, Dudley M. Crystal growth and characterization of CdTe grown by vertical gradient freeze Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 147: 35-42. DOI: 10.1016/J.Mseb.2007.11.005  0.598
2008 Wang S, Raghothamachar B, Dudley M, Ren Z, Han J, Timmerman AG. Sublimation growth and defect characterization of AlN single crystals Materials Research Society Symposium Proceedings. 1040: 78-83.  0.39
2007 Wang S, Raghothamachar B, Dudley M, Ren Z, Han J, Timmerman AG. Sublimation Growth and Defect Characterization of AlN Single Crystals Mrs Proceedings. 1040. DOI: 10.1557/Proc-1040-Q03-01  0.619
2007 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z, Coffey DW. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer Journal of Materials Research. 22: 675-680. DOI: 10.1557/Jmr.2007.0077  0.615
2006 Raghothamachar B, Dhanaraj G, Bai J, Dudley M. Defect analysis in crystals using X-ray topography. Microscopy Research and Technique. 69: 343-58. PMID 16646013 DOI: 10.1002/Jemt.20290  0.628
2006 Raghothamachar B, Dalmau R, Dudley M, Schlesser R, Zhuang D, Herro Z, Sitar Z. Structural characterization of bulk AIN single crystals grown from self-seeding and seeding by SiC substrates Materials Science Forum. 527: 1521-1524. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1521  0.654
2006 Bai J, Huang X, Raghothamachar B, Dudley M, Wagner B, Davis RF, Wu L, Zhu Y. Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates Materials Science Forum. 1513-1516. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1513  0.604
2006 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates Materials Science Forum. 527: 1497-1500. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1497  0.603
2006 Su CH, Lehoczky SL, Li C, Raghothamachar B, Dudley M, Szőke J, Bárczy P. Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC) Materials Science Forum. 508: 117-124. DOI: 10.4028/Www.Scientific.Net/Msf.508.117  0.616
2006 Su CH, Lehoczky SL, Li C, Raghothamachar B, Dudley M, Szoke J, Barczy P. Crystal growth of CdTe by gradient freeze in Universal Multizone Crystallizator (UMC) Materials Science Forum. 508: 117-124. DOI: 10.4028/0-87849-991-1.117  0.389
2006 Chen H, Raghothamachar B, Vetter W, Dudley M, Wang Y, Skromme B. Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer Mrs Proceedings. 911: 169-174. DOI: 10.1557/Proc-0911-B12-03  0.616
2006 Dudley M, Bai J, Huang X, Vetter WM, Dhanaraj G, Raghothamachar B. Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films Materials Science in Semiconductor Processing. 9: 315-322. DOI: 10.1016/J.Mssp.2006.01.026  0.659
2006 Volz MP, Schweizer M, Raghothamachar B, Dudley M, Szoke J, Cobb SD, Szofran FR. X-ray characterization of detached-grown germanium crystals Journal of Crystal Growth. 290: 446-451. DOI: 10.1016/J.Jcrysgro.2006.01.025  0.653
2006 Raghothamachar B, Bai J, Dudley M, Dalmau R, Zhuang D, Herro Z, Schlesser R, Sitar Z, Wang B, Callahan M, Rakes K, Konkapaka P, Spencer M. Characterization of bulk grown GaN and AlN single crystal materials Journal of Crystal Growth. 287: 349-353. DOI: 10.1016/J.Jcrysgro.2005.11.042  0.5
2006 Konkapaka P, Raghothamachar B, Dudley M, Makarov Y, Spencer MG. Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique Journal of Crystal Growth. 289: 140-144. DOI: 10.1016/J.Jcrysgro.2005.11.005  0.346
2006 Carini GA, Arnone C, Bolotnikov AE, Camarda GS, De Wames R, Dinan JH, Markunas JK, Raghothamachar B, Sivananthan S, Smith R, Zhao J, Zhong Z, James RB. Material quality characterization of CdZnTe substrates for HgCdTe epitaxy Journal of Electronic Materials. 35: 1495-1502. DOI: 10.1007/S11664-006-0291-X  0.427
2006 Zhuang D, Herro ZG, Schlesser R, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport Journal of Electronic Materials. 35: 1513-1517. DOI: 10.1007/S11664-006-0141-X  0.452
2006 Wang S, Raghothamachar B, Dudley M, Timmerman AG. Crystal growth and defect characterization of AlN single crystals Materials Research Society Symposium Proceedings. 892: 775-780.  0.421
2006 Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Materials Research Society Symposium Proceedings. 892: 781-786.  0.376
2006 Chen H, Raghothamachar B, Vetter W, Dudley M, Wang Y, Skromme BJ. Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer Materials Research Society Symposium Proceedings. 911: 169-174.  0.39
2006 Bai J, Huang X, Raghothamachar B, Dudley M, Wagner B, Davis RF, Wu L, Zhu Y. Strain relaxation in GaN/AIN films grown on vicinal and on-axis SiC substrates Materials Science Forum. 527: 1513-1516.  0.374
2005 Raghothamachar B, Dudley M, Dalmau R, Schlesser R, Sitar Z. Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- And 6H-SiC seeds Materials Research Society Symposium Proceedings. 831: 447-452. DOI: 10.1557/Proc-831-E8.24  0.545
2005 Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-07  0.544
2005 Wang S, Raghothamachar B, Dudley M, Timmerman AG. Crystal Growth and Defect Characterization of AlN Single Crystals Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-06  0.59
2005 Dhanaraj G, Raghothamachar B, Bai J, Chung H, Dudley M. Synchrotron x-ray topographic characterization of defects in InP bulk crystals Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2005: 643-648. DOI: 10.1109/ICIPRM.2005.1517578  0.431
2005 Wang Y, Ali GN, Mikhov MK, Vaidyanathan V, Skromme BJ, Raghothamachar B, Dudley M. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1829784  0.544
2005 Hollingsworth MD, Peterson ML, Rush JR, Brown ME, Abel MJ, Black AA, Dudley M, Raghothamachar B, Werner-Zwanziger U, Still EJ, Vanecko JA. Memory and perfection in ferroelastic inclusion compounds Crystal Growth and Design. 5: 2100-2116. DOI: 10.1021/Cg050347J  0.506
2005 Liu B, Edgar JH, Raghothamachar B, Dudley M, Lin JY, Jiang HX, Sarua A, Kuball M. Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 117: 99-104. DOI: 10.1016/J.Mseb.2004.10.009  0.619
2005 Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Journal of Crystal Growth. 279: 13-19. DOI: 10.1016/J.Jcrysgro.2004.12.027  0.433
2005 Raghothamachar B, Dudley M, Wang B, Callahan M, Bliss D, Konkapaka P, Wu H, Spencer M. X-ray characterization of GaN single crystal layers grown by the anunonothermal technique on HYPE GaN seeds and by the sublimation technique on sapphire seeds Materials Research Society Symposium Proceedings. 831: 441-446.  0.412
2004 Liu B, Edgar JH, Gu Z, Zhuang D, Raghothamachar B, Dudley M, Sarua A, Kuball M, Meyer HM. The durability of various crucible materials for aluminum nitride crystal growth by sublimation Mrs Internet Journal of Nitride Semiconductor Research. 9. DOI: 10.1557/S1092578300000417  0.432
2004 Raghothamachar B, Dudley M, Wang B, Callahan M, Bliss D, Konkapaka P, Wu H, Spencer M. X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E8.23  0.573
2004 Bai J, Dudley M, Raghothamachar B, Gouma P, Skromme BJ, Chen L, Hartlieb PJ, Michaels E, Kolis JW. Correlated structural and optical characterization of ammonothermally grown bulk GaN Applied Physics Letters. 84: 3289-3291. DOI: 10.1063/1.1715154  0.61
2003 Dalmau R, Raghothamachar B, Dudley M, Schlesser R, Sitar Z. Crucible selection in AlN bulk crystal growth Materials Research Society Symposium - Proceedings. 798: 287-291. DOI: 10.1557/Proc-798-Y2.9  0.625
2003 Palosz W, Grasza K, Durose K, Halliday DP, Boyall NM, Dudley M, Raghothamachar B, Cai L. The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport Journal of Crystal Growth. 254: 316-328. DOI: 10.1016/S0022-0248(03)01183-7  0.624
2003 Raghothamachar B, Dudley M, Rojo JC, Morgan K, Schowalter LJ. X-ray characterization of bulk AIN single crystals grown by the sublimation technique Journal of Crystal Growth. 250: 244-250. DOI: 10.1016/S0022-0248(02)02253-4  0.661
2003 Schowalter LJ, Slack GA, Whitlock JB, Morgan K, Schujman SB, Raghothamachar B, Dudley M, Evans KR. Fabrication of native, single-crystal AlN substrates Physica Status Solidi C: Conferences. 1997-2000. DOI: 10.1002/Pssc.200303462  0.593
2002 Raghothamachar B, Bai J, Vetter WM, Gouma P, Dudley M, Mynbaeva M, Smith MT, Saddow SE. Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K2.11  0.62
2002 Rojo JC, Schowalter LJ, Slack G, Morgan K, Barani J, Schujman S, Biswas S, Raghothamachar B, Dudley M, Shur M, Gaska R, Johnson NM, Kneissl M. Progress in the preparation of aluminum nitride substrates from bulk crystals Materials Research Society Symposium - Proceedings. 722: 5-13. DOI: 10.1557/Proc-722-K1.1  0.574
2002 Raghothamachar B, Vetter WM, Dudley M, Dalmau R, Schlesser R, Sitar Z, Michaels E, Kolis JW. Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN Journal of Crystal Growth. 246: 271-280. DOI: 10.1016/S0022-0248(02)01751-7  0.666
2002 Raghothamachar B, Bai J, Vetter WM, Gouma P, Dudley M, Mynbaeva M, Smith MT, Saddow SE. Characterization of porous SiC substrates and of the epilayer structures grown on them Materials Research Society Symposium - Proceedings. 742: 109-114.  0.439
2001 Rojo JC, Schowalter LJ, Morgan K, Florescu DI, Pollak FH, Raghothamachar B, Dudley M. Single-crystal aluminum nitride substrate preparation from bulk crystals Materials Research Society Symposium Proceedings. 680: 1-7. DOI: 10.1557/Proc-680-E2.7  0.571
2001 Carlos Rojo J, Slack GA, Morgan K, Raghothamachar B, Dudley M, Schowalter LJ. Report on the growth of bulk aluminum nitride and subsequent substrate preparation Journal of Crystal Growth. 231: 317-321. DOI: 10.1016/S0022-0248(01)01452-X  0.62
2000 Bliss DF, Bryant G, Antypas G, Raghothamachar B, Dhanaraj G, Dudley M, Zhao J. X-ray characterization of bulk InP:S crystals grown by LEC in a low thermal gradient Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 530-533.  0.391
1998 Dudley M, Raghothamachar B, Guo Y, Huang XR, Chung H, Larson DJ, Hurle DTJ, Bliss DF, Prasad V, Huang Z. The mechanism of twinning in zincblende structure crystals: New insights on polarity effects from a study of magnetic liquid encapsulated Czochralski grown InP single crystals Mrs Proceedings. 524: 65-70. DOI: 10.1557/Proc-524-65  0.543
1998 Larson DJ, Dudley M, Chung H, Raghothamachar B. Characterization of Zn-Alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2 Advances in Space Research. 22: 1179-1188. DOI: 10.1016/S0273-1177(98)00161-6  0.589
1998 Dudley M, Raghothamachar B, Guo Y, Huang XR, Chung H, Hurle DTJ, Bliss DF. The influence of polarity on twinning in zincblende structure crystals : new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals Journal of Crystal Growth. 192: 1-10. DOI: 10.1016/S0022-0248(98)00411-4  0.575
1998 Raghothamachar B, Chung H, Dudley M, Larson DJ. Effect of constrained growth on defect structures in microgravity grown CdZnTe Boules Journal of Electronic Materials. 27: 556-563. DOI: 10.1007/S11664-998-0015-5  0.6
1998 Larson DJ, Dudley M, Chung H, Raghothamachar B. Characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2 Advances in Space Research. 22: 1179-1188.  0.347
1998 Raghothamachar B, Chung H, Dudley M, Larson DJ. Effect of constrained growth on defect structures in microgravity grown CdZnTe boules Journal of Electronic Materials. 27: 556-563.  0.363
1998 Dudley M, Raghothamachar B, Guo Y, Huang XR, Chung H, Hurle DTJ, Bliss DF. The influence of polarity on twinning in zincblende structure crystals: New insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals Journal of Crystal Growth. 192: 1-10.  0.323
1998 Dudley M, Raghothamachar B, Guo Y, Huang XR, Chung H, Larson DJ, Hurle DTJ, Bliss DF, Prasad V, Huang Z. Mechanism of twinning in zincblende structure crystals: New insights on polarity effects from a study of magnetic liquid encapsulated Czochralski grown InP single crystals Materials Research Society Symposium - Proceedings. 524: 65-70.  0.365
1997 Palosz W, Gillies D, Grasza K, Chung H, Raghothamachar B, Dudley M. Characterization of Cadmium-Zinc Telluride Crystals Grown by 'Contactless' PVT Using Synchrotron White Beam Topography Journal of Crystal Growth. 182: 37-44. DOI: 10.1016/S0022-0248(97)00337-0  0.629
1997 Palosz W, Gillies D, Grasza K, Chung H, Raghothamachar B, Dudley M. Characterization of cadmium-zinc telluride crystals grown by 'contactless' PVT using synchrotron white beam topography Journal of Crystal Growth. 182: 37-44.  0.417
1996 Chung H, Raghothamachar B, Zhou W, Dudley M, Gillies DC. Studies of interface demarcation and structural defects in Ga doped Ge single crystals using synchrotron white beam x-ray topography Mrs Proceedings. 437: 107. DOI: 10.1557/Proc-437-107  0.66
1996 Larson Jr DJ, Dudley M, Chung H, Raghothamachar B. Synchrotron characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on STS 50 and 73 Acta Crystallographica Section a Foundations of Crystallography. 52: C521-C521. DOI: 10.1107/S0108767396078737  0.344
1996 Chung H, Raghothamachar B, Dudley M, Larson DJ. Synchrotron white beam x-ray topography characterization of structural defects in microgravity and ground-based CdZnTe crystals Proceedings of Spie - the International Society For Optical Engineering. 2809: 45-56.  0.447
1996 Chung H, Raghothamachar B, Zhou W, Dudley M, Gillies DC. Studies of interface demarcation and structural defects in Ga doped Ge single crystals using synchrotron white beam X-ray topography Materials Research Society Symposium Proceedings. 437: 107-112.  0.46
1995 Chung H, Raghothamachar B, Wu J, Dudley M, Larson DJ, Gillies DC. Characterization of Growth Defects in CdZnTe Single Crystals by Synchrotron White Beam X-ray Topography Mrs Proceedings. 378: 41. DOI: 10.1557/Proc-378-41  0.634
1995 Chung H, Raghothamachar B, Wu J, Dudley M, Larson DJ, Gillies DC. Characterization of growth defects in CdZnTe single crystals by synchrotron white beam x-ray topography Materials Research Society Symposium - Proceedings. 378: 41-46.  0.443
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