Balaji Raghothamachar, Ph.D. - Publications

Affiliations: 
2001 Stony Brook University, Stony Brook, NY, United States 
Area:
Materials Science Engineering

71 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Goue OY, Yang Y, Guo J, Raghothamachar B, Dudley M, Hosteller JL, Myers Ward RL, Klein PB, Gaskill DK. Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography Materials Science Forum. 858: 297-300. DOI: 10.4028/www.scientific.net/MSF.858.297  0.4
2016 Guo JQ, Yang Y, Wu F, Sumakeris JJ, Leonard RT, Goue OY, Raghothamachar B, Dudley M. Using ray tracing simulations for direct determination of burgers vectors of threading mixed dislocations in 4H-SiC c-plane wafers grown by PVT method Materials Science Forum. 858: 15-18. DOI: 10.4028/www.scientific.net/MSF.858.15  0.48
2016 Padavala B, Frye CD, Wang X, Ding Z, Chen R, Dudley M, Raghothamachar B, Lu P, Flanders BN, Edgar JH. Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate Crystal Growth and Design. 16: 981-987. DOI: 10.1021/acs.cgd.5b01525  0.4
2016 Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2016.01.013  0.32
2016 Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2015.12.028  0.44
2016 Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method Journal of Electronic Materials. 1-6. DOI: 10.1007/s11664-015-4317-0  0.48
2015 Yang Y, Guo J, Goue OY, Wang H, Wu F, Raghothamachar B, Dudley M, Chung G, Quast J, Sanchez E, Manning I, Hansen D. Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers Ecs Transactions. 69: 39-46. DOI: 10.1149/06911.0039ecst  0.32
2015 Guo J, Yang Y, Wu F, Goue OY, Raghothamachar B, Dudley M. Direct determination of burgers vectors of threading mixed dislocations in 4h-SiC c-plane wafers grown By PVT method Ecs Transactions. 69: 33-38. DOI: 10.1149/06911.0033ecst  0.56
2015 Padavala B, Frye CD, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar JH. Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide Solid State Sciences. 47: 55-60. DOI: 10.1016/j.solidstatesciences.2015.03.002  0.36
2014 Wang HH, Wu FZ, Byrapa SY, Yang Y, Raghothamachar B, Dudley M, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen DM, Loboda MJ. Study of v and y shape frank-type stacking faults formation in 4H-SiC Epilayer Materials Science Forum. 778: 332-337. DOI: 10.4028/www.scientific.net/MSF.778-780.332  0.4
2014 Wang HH, Wu FZ, Dudley M, Raghothamachar B, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen DM, Loboda MJ. Measurement of critical thickness for the formation of interfacial dislocations and half loop arrays in 4H-SiC epilayer via X-ray topography Materials Science Forum. 778: 328-331. DOI: 10.4028/www.scientific.net/MSF.778-780.328  0.44
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ. Direct observation of stacking fault nucleation from deflected threading dislocations with burgers vector c+a in PVT grown 4H-SiC Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/opl.2014.564  0.48
2014 Goue OY, Raghothamachar B, Dudley M, Trunek AJ, Neudeck PG, Woodworth AA, Spry DJ. Structural Characterization of Lateral-grown 6H-SiC a/m-plane seed crystals by hot wall CVD epitaxy Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/opl.2014.563  0.36
2014 Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of relaxation processes and basal plane dislocations in CVD grown homoepitaxial layers of 4H-SiC Ecs Transactions. 64: 213-222. DOI: 10.1149/06407.0213ecst  0.48
2014 Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images Journal of Applied Physics. 116. DOI: 10.1063/1.4895136  0.48
2014 Wang H, Wu F, Byrappa S, Raghothamachar B, Dudley M, Wu P, Zwieback I, Souzis A, Ruland G, Anderson T. Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Journal of Crystal Growth. 401: 423-430. DOI: 10.1016/j.jcrysgro.2014.01.078  0.48
2014 Woodworth AA, Neudeck PG, Sayir A, Solá F, Dudley M, Raghothamachar B. Investigation of single crystal 4H-SiC growth by the Solvent-Laser Heated Floating Zone technique Journal of Crystal Growth. 392: 34-40. DOI: 10.1016/j.jcrysgro.2014.01.050  0.44
2014 Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B. Crystal growth and characterization of cubic boron phosphide on silicon carbide Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1575-1581.  0.44
2014 Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B, Schmitt J. Heteroepitaxial growth of boron phosphide on 3C-SiC/Si(100) and AlN/sapphire(0001) substrates Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1583-1590.  0.36
2013 Zhou T, Raghothamachar B, Wu F, Dudley M. Grazing incidence X-ray topographic studies of threading dislocations in hydrothermal grown ZnO single crystal substrates Materials Research Society Symposium Proceedings. 1494: 121-126. DOI: 10.1557/opl.2013.261  0.72
2013 Dudley M, Raghothamachar B, Wang H, Wu F, Byrappa S, Chung G, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Synchrotron X-ray topography studies of the evolution of the defect microstructure in physical vapor transport grown 4H-SiC single crystals Ecs Transactions. 58: 315-324. DOI: 10.1149/05804.0315ecst  0.48
2013 Wang H, Sun S, Dudley M, Byrappa S, Wu F, Raghothamachar B, Chung G, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron X-ray topography and molten KOH etching Journal of Electronic Materials. 42: 794-798. DOI: 10.1007/s11664-013-2527-x  0.56
2013 Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Wu P, Xu X, Zwieback I. Characterization and formation mechanism of six pointed star-type stacking faults in 4H-SiC Journal of Electronic Materials. 42: 787-793. DOI: 10.1007/s11664-012-2379-9  0.32
2012 Byrappa S, Wu F, Wang H, Raghothamachar B, Choi G, Sun S, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Deflection of threading dislocations with burgers vector c/c+a observed in 4H-SiC PVT-Grown substrates with associated stacking faults Materials Science Forum. 717: 347-350. DOI: 10.4028/www.scientific.net/MSF.717-720.347  0.52
2012 Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector in PVT-Grown 4H-SiC Materials Science Forum. 717: 343-346. DOI: 10.4028/www.scientific.net/MSF.717-720.343  0.44
2012 Trunek AJ, Neudeck PG, Woodworth AA, Powell JA, Spry DJ, Raghothamachar B, Dudley M. Lateral growth expansion of 4H/6H-SiC m-plane pseudo fiber crystals by hot wall CVD epitaxy Materials Science Forum. 717: 33-36. DOI: 10.4028/www.scientific.net/MSF.717-720.33  0.4
2012 Wang H, Byrappa S, Wu F, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the hopping Frank-Read source mechanism and observations of prismatic glide in 4H-SiC Materials Science Forum. 717: 327-330. DOI: 10.4028/www.scientific.net/MSF.717-720.327  0.64
2012 Woodworth AA, Sayir A, Neudeck PG, Raghothamachar B, Dudley M. Characterization of 4H 〈000-1〉 silicon carbide films grown by solvent-laser heated floating zone Materials Research Society Symposium Proceedings. 1433: 113-118. DOI: 10.1557/opl.2012.1149  0.44
2012 Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Combined application of section and projection topography to defect analysis in PVT-grown 4H-SiC Materials Research Society Symposium Proceedings. 1433: 71-76. DOI: 10.1557/opl.2012.1142  0.52
2012 Dudley M, Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Synchrotron topography studies of growth and deformation-induced dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 59-70. DOI: 10.1557/opl.2012.1141  0.56
2012 Wu F, Byrappa S, Wang H, Chen Y, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 41-46. DOI: 10.1557/opl.2012.1050  0.32
2012 Wang H, Wu F, Byrappa S, Sun S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.4704679  0.6
2012 Müller SG, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Journal of Crystal Growth. 352: 39-42. DOI: 10.1016/j.jcrysgro.2011.10.050  0.36
2011 Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Formation mechanism of stacking faults in PVT 4H-SiC created by deflection of threading dislocations with burgers vector c+a Materials Science Forum. 679: 269-272. DOI: 10.4028/www.scientific.net/MSF.679-680.269  0.68
2011 Dudley M, Wu F, Wang H, Byrappa S, Raghothamachar B, Choi G, Sun S, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H-SiC Applied Physics Letters. 98. DOI: 10.1063/1.3597226  0.4
2010 Dudley M, Zhang N, Zhang Y, Raghothamachar B, Sanchez EK. Nucleation of c-axis screw dislocations at substrate surface damage during 4H-Silicon carbide homo-epitaxy Materials Science Forum. 645: 295-298. DOI: 10.4028/www.scientific.net/MSF.645-648.295  0.52
2010 Dudley M, Zhang N, Zhang Y, Raghothamachar B, Byrappa S, Choi G, Sanchez EK, Hansen D, Drachev R, Loboda MJ. Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density Materials Science Forum. 645: 291-294. DOI: 10.4028/www.scientific.net/MSF.645-648.291  0.36
2010 Dhanaraj G, Raghothamachar B, Dudley M. X-ray characterisation of zinc oxide (ZnO) single crystal substrates Materials Research Innovations. 14: 34-37. DOI: 10.1179/143307510X12599329343565  0.84
2010 Raghothamachar B, Carvajal JJ, Pujol MC, Mateos X, Solé R, Aguiló M, Díaz F, Dudley M. Synchrotron X-ray topography study of structural defects and strain in epitaxial structures of Yb- and Tm-doped potassium rare-earth double tungstates and their influence on Laser Performance Journal of Electronic Materials. 39: 823-829. DOI: 10.1007/s11664-010-1226-0  0.32
2010 Zhang Y, Chen H, Choi G, Raghothamachar B, Dudley M, Edgar JH, Grasza K, Tymicki E, Zhang L, Su D, Zhu Y. Nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC crystals Journal of Electronic Materials. 39: 799-804. DOI: 10.1007/s11664-010-1105-8  0.36
2010 Dudley M, Byrappa S, Wang H, Wu F, Zhang Y, Raghothamachar B, Choi G, Sanchez EK, Hansen D, Drachev R, Loboda MJ. Analysis of dislocation behavior in low dislocation density, PVT-grown, four-inch silicon carbide single crystals Materials Research Society Symposium Proceedings. 1246: 29-34.  0.48
2009 Raghothamachar B, Sarkar V, Noveski V, Dudley M, Sharan S. A novel X-ray diffraction -based technique for complete stress state mapping of packaged silicon dies Materials Research Society Symposium Proceedings. 1158: 13-18.  0.52
2008 Su CH, Lehoczky SL, Raghothamachar B, Dudley M. Crystal growth and characterization of CdTe grown by vertical gradient freeze Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 147: 35-42. DOI: 10.1016/j.mseb.2007.11.005  0.36
2008 Chow CY, Raghothamachar B, Carvajal JJ, Chen H, Dudley M. Synthesis of GaN nanostructures at low temperatures by chemical vapor deposition Materials Research Society Symposium Proceedings. 1080: 20-25.  0.52
2008 Wang S, Raghothamachar B, Dudley M, Ren Z, Han J, Timmerman AG. Sublimation growth and defect characterization of AlN single crystals Materials Research Society Symposium Proceedings. 1040: 78-83.  0.36
2006 Raghothamachar B, Dhanaraj G, Bai J, Dudley M. Defect analysis in crystals using X-ray topography. Microscopy Research and Technique. 69: 343-58. PMID 16646013 DOI: 10.1002/jemt.20290  0.44
2006 Dudley M, Bai J, Huang X, Vetter WM, Dhanaraj G, Raghothamachar B. Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films Materials Science in Semiconductor Processing. 9: 315-322. DOI: 10.1016/j.mssp.2006.01.026  0.48
2006 Raghothamachar B, Bai J, Dudley M, Dalmau R, Zhuang D, Herro Z, Schlesser R, Sitar Z, Wang B, Callahan M, Rakes K, Konkapaka P, Spencer M. Characterization of bulk grown GaN and AlN single crystal materials Journal of Crystal Growth. 287: 349-353. DOI: 10.1016/j.jcrysgro.2005.11.042  0.36
2006 Konkapaka P, Raghothamachar B, Dudley M, Makarov Y, Spencer MG. Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique Journal of Crystal Growth. 289: 140-144. DOI: 10.1016/j.jcrysgro.2005.11.005  0.44
2006 Wang S, Raghothamachar B, Dudley M, Timmerman AG. Crystal growth and defect characterization of AlN single crystals Materials Research Society Symposium Proceedings. 892: 775-780.  0.4
2006 Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Materials Research Society Symposium Proceedings. 892: 781-786.  0.44
2006 Chen H, Raghothamachar B, Vetter W, Dudley M, Wang Y, Skromme BJ. Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer Materials Research Society Symposium Proceedings. 911: 169-174.  0.48
2006 Raghothamachar B, Dalmau R, Dudley M, Schlesser R, Zhuang D, Herro Z, Sitar Z. Structural characterization of bulk AIN single crystals grown from self-seeding and seeding by SiC substrates Materials Science Forum. 527: 1521-1524.  0.48
2006 Zhuang D, Herro ZG, Schlesser R, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport Journal of Electronic Materials. 35: 1513-1517.  0.36
2005 Dhanaraj G, Raghothamachar B, Bai J, Chung H, Dudley M. Synchrotron x-ray topographic characterization of defects in InP bulk crystals Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2005: 643-648. DOI: 10.1109/ICIPRM.2005.1517578  0.4
2005 Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Journal of Crystal Growth. 279: 13-19. DOI: 10.1016/j.jcrysgro.2004.12.027  0.32
2005 Raghothamachar B, Dudley M, Dalmau R, Schlesser R, Sitar Z. Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- And 6H-SiC seeds Materials Research Society Symposium Proceedings. 831: 447-452.  0.32
2004 Bai J, Dudley M, Raghothamachar B, Gouma P, Skromme BJ, Chen L, Hartlieb PJ, Michaels E, Kolis JW. Correlated structural and optical characterization of ammonothermally grown bulk GaN Applied Physics Letters. 84: 3289-3291. DOI: 10.1063/1.1715154  0.4
2003 Palosz W, Grasza K, Durose K, Halliday DP, Boyall NM, Dudley M, Raghothamachar B, Cai L. The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport Journal of Crystal Growth. 254: 316-328. DOI: 10.1016/S0022-0248(03)01183-7  0.44
2003 Raghothamachar B, Dudley M, Rojo JC, Morgan K, Schowalter LJ. X-ray characterization of bulk AIN single crystals grown by the sublimation technique Journal of Crystal Growth. 250: 244-250. DOI: 10.1016/S0022-0248(02)02253-4  0.36
2003 Dalmau R, Raghothamachar B, Dudley M, Schlesser R, Sitar Z. Crucible selection in AlN bulk crystal growth Materials Research Society Symposium - Proceedings. 798: 287-291.  0.44
2002 Raghothamachar B, Vetter WM, Dudley M, Dalmau R, Schlesser R, Sitar Z, Michaels E, Kolis JW. Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN Journal of Crystal Growth. 246: 271-280. DOI: 10.1016/S0022-0248(02)01751-7  0.44
2001 Carlos Rojo J, Slack GA, Morgan K, Raghothamachar B, Dudley M, Schowalter LJ. Report on the growth of bulk aluminum nitride and subsequent substrate preparation Journal of Crystal Growth. 231: 317-321. DOI: 10.1016/S0022-0248(01)01452-X  0.32
2000 Bliss DF, Bryant G, Antypas G, Raghothamachar B, Dhanaraj G, Dudley M, Zhao J. X-ray characterization of bulk InP:S crystals grown by LEC in a low thermal gradient Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 530-533.  0.52
1999 Huang XR, Dudley M, Zhao JY, Raghothamachar B. Dependence of the direct dislocation image on sample-to-film distance in X-ray topography Philosophical Transactions of the Royal Society a: Mathematical, Physical and Engineering Sciences. 357: 2659-2670.  0.48
1998 Larson DJ, Dudley M, Chung H, Raghothamachar B. Characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2 Advances in Space Research. 22: 1179-1188.  0.36
1998 Raghothamachar B, Chung H, Dudley M, Larson DJ. Effect of constrained growth on defect structures in microgravity grown CdZnTe boules Journal of Electronic Materials. 27: 556-563.  0.32
1997 Palosz W, Gillies D, Grasza K, Chung H, Raghothamachar B, Dudley M. Characterization of cadmium-zinc telluride crystals grown by 'contactless' PVT using synchrotron white beam topography Journal of Crystal Growth. 182: 37-44.  0.36
1996 Chung H, Raghothamachar B, Dudley M, Larson DJ. Synchrotron white beam x-ray topography characterization of structural defects in microgravity and ground-based CdZnTe crystals Proceedings of Spie - the International Society For Optical Engineering. 2809: 45-56.  0.48
1996 Chung H, Raghothamachar B, Zhou W, Dudley M, Gillies DC. Studies of interface demarcation and structural defects in Ga doped Ge single crystals using synchrotron white beam X-ray topography Materials Research Society Symposium Proceedings. 437: 107-112.  0.32
1995 Chung H, Raghothamachar B, Wu J, Dudley M, Larson DJ, Gillies DC. Characterization of growth defects in CdZnTe single crystals by synchrotron white beam x-ray topography Materials Research Society Symposium - Proceedings. 378: 41-46.  0.32
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