| Year |
Citation |
Score |
| 2012 |
Oh J, Jeon K, Lee SH, Huang J, Hung PY, Ok I, Sassman B, Ko DH, Kirsch P, Jammy R. High mobility CMOS transistors on Si/SiGe heterostructure channels Microelectronic Engineering. 97: 26-28. DOI: 10.1016/J.Mee.2012.02.030 |
0.389 |
|
| 2011 |
Oh J, Huang J, Ok I, Lee SH, Kirsch PD, Jammy R, Lee HD. High transport Si/SiGe heterostructures for CMOS transistors with orientation and strain enhanced mobility Ieice Transactions On Electronics. 712-716. DOI: 10.1587/Transele.E94.C.712 |
0.371 |
|
| 2011 |
Lee SH, Majhi P, Ferrer DA, Hung PY, Huang J, Oh J, Loh WY, Sassman B, Min BG, Tseng HH, Harris R, Bersuker G, Kirsch PD, Jammy R, Banerjee SK. Impact of millisecond flash-assisted rapid thermal annealing on SiGe heterostructure channel pMOSFETs with a high-k/metal gate Ieee Transactions On Electron Devices. 58: 2917-2923. DOI: 10.1109/Ted.2011.2159862 |
0.511 |
|
| 2011 |
Lee SH, Nainani A, Oh J, Jeon K, Kirsch PD, Majhi P, Register LF, Banerjee SK, Jammy R. On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si0.5Ge0.5 quantum-well pMOSFET along 〈 110 〉 and 〈 100 〉 channel directions Ieee Transactions On Electron Devices. 58: 985-995. DOI: 10.1109/Ted.2011.2105876 |
0.494 |
|
| 2011 |
Oh J, Huang J, Chen YT, Ok I, Jeon K, Lee SH, Sassman B, Loh WY, Lee HD, Ko DH, Majhi P, Kirsch P, Jammy R. Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors Thin Solid Films. 520: 442-444. DOI: 10.1016/J.Tsf.2011.06.025 |
0.303 |
|
| 2010 |
Li F, Lee S, Fang Z, Majhi P, Zhang Q, Banerjee SK, Datta S. Flicker-Noise Improvement in 100-nm $L_{g}\ \hbox{Si}_{0.50}\hbox{Ge}_{0.50}$ Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer Ieee Electron Device Letters. 31: 47-49. DOI: 10.1109/Led.2009.2035140 |
0.464 |
|
| 2008 |
Lee SH, Majhi P, Oh J, Sassman B, Young C, Bowonder A, Loh WY, Choi KJ, Cho BJ, Lee HD, Kirsch P, Harris HR, Tsai W, Datta S, Tseng HH, et al. Demonstration of Lg ∼ nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high Ion/Ioff (>5 × 104, and controlled short channel effects (SCEs) Ieee Electron Device Letters. 29: 1017-1020. DOI: 10.1109/Led.2008.2002073 |
0.493 |
|
| 2007 |
Dey S, Lee S, Joshi SV, Majhi P, Banerjee SK. Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G05-16 |
0.575 |
|
| 2007 |
Kelly DQ, Lee S, Kalra P, Harris R, Oh J, Kirsch P, Banerjee SK, Majhi P, Tseng H, Jammy R. Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs Microelectronic Engineering. 84: 2054-2057. DOI: 10.1016/J.Mee.2007.04.133 |
0.505 |
|
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