| Year |
Citation |
Score |
| 2020 |
El Bouanani L, Serna MI, M N Hasan S, Murillo BL, Nam S, Choi H, Alshareef HN, Quevedo-Lopez MA. Large-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes. Acs Applied Materials & Interfaces. PMID 33167617 DOI: 10.1021/acsami.0c15462 |
0.361 |
|
| 2019 |
Pintor-Monroy MI, Murillo-Borjas BL, Catalano M, Quevedo-Lopez MA. Controlling Carrier Type and Concentration in NiO Films To Enable PN Homojunctions. Acs Applied Materials & Interfaces. 11: 27048-27056. PMID 31283171 DOI: 10.1021/acsami.9b04380 |
0.314 |
|
| 2019 |
Rodriguez-Davila RA, Mejia I, Chapman RA, Young CD, Quevedo-Lopez M. Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C Ieee Transactions On Electron Devices. 66: 3861-3866. DOI: 10.1109/Ted.2019.2931635 |
0.433 |
|
| 2019 |
Wang J, Motaharifar E, Murthy LNS, Higgins M, Barrera D, Daunis TB, Zheng Y, Malko AV, Ely F, Quevedo-Lopez M, Lee M, Hsu JWP. Revealing lattice and photocarrier dynamics of high-quality MAPbBr3 single crystals by far infrared reflection and surface photovoltage spectroscopy Journal of Applied Physics. 125: 25706. DOI: 10.1063/1.5072794 |
0.303 |
|
| 2019 |
Rodriguez-Davila RA, Chapman RA, Bolshakov P, Young CD, Quevedo-Lopez M. Impact of Al2O3 deposition temperature on the performance and initial stability of nanocrystalline ZnO thin-film transistors Microelectronic Engineering. 217: 111114. DOI: 10.1016/J.Mee.2019.111114 |
0.417 |
|
| 2018 |
Chou H, Majumder S, Roy A, Catalano M, Zhuang P, Quevedo-López MA, Colombo L, Banerjee SK. Dependence of h-BN film thickness as grown on nickel single crystal substrates of different orientation. Acs Applied Materials & Interfaces. PMID 30489058 DOI: 10.1021/Acsami.8B16816 |
0.357 |
|
| 2018 |
Pintor-Monroy I, Barrera D, Murillo-Borjas B, Ochoa-Estrella F, Hsu JWP, Quevedo-López MA. Tunable Electrical and Optical Properties of Nickel Oxide (NiOx) Thin Films for Fully Transparent NiOx-Ga2O3 p-n Junction Diodes. Acs Applied Materials & Interfaces. PMID 30360100 DOI: 10.1021/acsami.8b08095 |
0.342 |
|
| 2018 |
Avila-Avendano J, Quevedo-Lopez M, Young C. Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition Applied Physics Letters. 112: 93501. DOI: 10.1063/1.5008753 |
0.365 |
|
| 2018 |
Ochoa-Estrella FJ, Vera-Marquina A, Mejia I, Leal-Cruz AL, Quevedo-López M. Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD Journal of Materials Science: Materials in Electronics. 29: 7629-7636. DOI: 10.1007/S10854-018-8755-3 |
0.428 |
|
| 2018 |
Ochoa-Estrella FJ, Vera-Marquina A, Mejia I, Leal-Cruz AL, Pintor-Monroy MI, Quevedo-López M. Structural, optical, and electrical properties of ZnTe:Cu thin films by PLD Journal of Materials Science: Materials in Electronics. 29: 20623-20628. DOI: 10.1007/S10854-018-0200-0 |
0.387 |
|
| 2018 |
Higgins M, Pintor-Monroy MI, Quevedo-Lopez M. Effects of Plasma Pretreatment on ZnO Deposition by SILAR on SiO2, HfO2, and Glass Substrates Crystal Research and Technology. 53: 1800039. DOI: 10.1002/Crat.201800039 |
0.343 |
|
| 2017 |
Alvarado-Beltrán CG, Almaral-Sánchez JL, Mejia I, Quevedo-López MA, Ramirez-Bon R. Sol-Gel PMMA-ZrO Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors. Acs Omega. 2: 6968-6974. PMID 31457280 DOI: 10.1021/acsomega.7b00552 |
0.392 |
|
| 2017 |
Qaradaghi V, Mejia I, Quevedo-Lopez M. Fabrication and Analysis of Thin Film CdTe/CdS-Based Avalanche Photodiodes Ieee Electron Device Letters. 38: 489-492. DOI: 10.1109/Led.2017.2670523 |
0.371 |
|
| 2017 |
Baniasadi M, Xu Z, Cai J, Daryadel S, Quevedo-Lopez M, Naraghi M, Minary-Jolandan M. Correlation of Annealing Temperature, Morphology, and Electro-Mechanical Properties of Electrospun Piezoelectric Nanofibers Polymer. 127: 192-202. DOI: 10.1016/J.Polymer.2017.08.053 |
0.355 |
|
| 2017 |
Zhang B, Zheng T, Sun C, Guo Z, Kim MJ, Alshareef HN, Quevedo-Lopez M, Gnade BE. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films Journal of Alloys and Compounds. 720: 156-160. DOI: 10.1016/J.Jallcom.2017.05.224 |
0.424 |
|
| 2016 |
Serna MI, Yoo SH, Moreno S, Xi Y, Oviedo JP, Choi H, Alshareef HN, Kim MJ, Minary-Jolandan M, Quevedo-Lopez MA. Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control. Acs Nano. PMID 27219117 DOI: 10.1021/Acsnano.6B01636 |
0.343 |
|
| 2016 |
Chapman RA, Rodriguez-Davila RA, Mejia I, Quevedo-Lopez M. Nanocrystalline ZnO TFTs Using 15-nm Thick Al₂O₃ Gate Insulator: Experiment and Simulation Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2597284 |
0.384 |
|
| 2016 |
Young CD, Campbell R, Daasa S, Benton S, Davila RR, Mejia I, Quevedo-Lopez M. Effect of dielectric thickness and annealing on threshold voltage instability of low temperature deposited high-k oxides on ZnO TFTs Ieee International Integrated Reliability Workshop Final Report. 2016: 34-36. DOI: 10.1109/IIRW.2015.7437062 |
0.323 |
|
| 2016 |
Yoo S, Avendano J, Delmar L, Nam S, Quevedo-Lopez M, Choi H. Band-gap engineering of Cd1 - XZnxTe films deposited by pulsed laser deposition Thin Solid Films. 612: 91-95. DOI: 10.1016/J.Tsf.2016.05.051 |
0.401 |
|
| 2016 |
Avila-Avendano J, Mejia I, Alshareef HN, Guo Z, Young C, Quevedo-Lopez M. In-situ CdS/CdTe heterojuntions deposited by pulsed laser deposition Thin Solid Films. 608: 1-7. DOI: 10.1016/J.Tsf.2016.04.010 |
0.45 |
|
| 2016 |
Medina-Montes MI, Baldenegro-Perez LA, Sanchez-Zeferino R, Rojas-Blanco L, Becerril-Silva M, Quevedo-Lopez MA, Ramirez-Bon R. Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance Solid-State Electronics. 123: 119-123. DOI: 10.1016/j.sse.2016.05.005 |
0.377 |
|
| 2016 |
Smith L, Murphy JW, Kim J, Rozhdestvenskyy S, Mejia I, Park H, Allee DR, Quevedo-Lopez M, Gnade B. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 838: 117-123. DOI: 10.1016/J.Nima.2016.09.026 |
0.316 |
|
| 2016 |
Hernandez-Como N, Morales-Acevedo A, Aleman M, Mejia I, Quevedo-Lopez MA. Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors Microelectronic Engineering. 150: 26-31. DOI: 10.1016/j.mee.2015.10.017 |
0.389 |
|
| 2016 |
Alcantar-Peña JJ, Lee G, Fuentes-Fernandez EMA, Gurman P, Quevedo-Lopez M, Sahoo S, Katiyar RS, Berman D, Auciello O. Science and technology of diamond films grown on HfO2 interface layer for transformational technologies Diamond and Related Materials. 69: 221-228. DOI: 10.1016/J.Diamond.2016.09.010 |
0.444 |
|
| 2016 |
Alfaro Cruz MR, Hernandez-Como N, Mejia I, Ortega-Zarzosa G, Martínez-Castañón GA, Quevedo-Lopez MA. Impact of the annealing atmosphere in the electrical and optical properties of ZnO thin films Journal of Sol-Gel Science and Technology. 1-6. DOI: 10.1007/s10971-016-4035-y |
0.341 |
|
| 2015 |
Hernandez-Como N, Berrellez-Reyes F, Mizquez-Corona R, Ramirez-Esquivel O, Mejia I, Quevedo-Lopez M. CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/6/065003 |
0.429 |
|
| 2015 |
Xi Y, Bouanani LE, Xu Z, Quevedo-Lopez MA, Minary-Jolandan M. Solution-based Ag-doped ZnSe thin films with tunable electrical and optical properties Journal of Materials Chemistry C. 3: 9781-9788. DOI: 10.1039/C5Tc01951F |
0.307 |
|
| 2015 |
Hernandez-Como N, Elizalde J, Mejia I, Quevedo-Lopez MA. Cadmium(1-x)zinc(x)telluride thin films deposited by sequential pulsed laser deposition Materials Science in Semiconductor Processing. 37: 93-98. DOI: 10.1016/j.mssp.2015.02.012 |
0.326 |
|
| 2015 |
Kabir DL, Mejia I, Perez MR, Ramos-Hernandez JC, Quevedo-Lopez MA. Optimization of Inkjet-Printed 6,13-Bis(triisopropylsilylethynyl) pentacene Using Photolithography-Defined Structures Journal of Electronic Materials. 44: 490-496. DOI: 10.1007/s11664-014-3427-4 |
0.312 |
|
| 2015 |
Gõmez-Gutiérrez CM, Luque PA, Castro-Beltran A, Vilchis-Nestor AR, Lugo-Medina E, Carrillo-Castillo A, Quevedo-Lopez MA, Olivas A. Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition Scanning. 37: 389-392. DOI: 10.1002/sca.21227 |
0.341 |
|
| 2014 |
Mejia I, Perez MR, Kabir DL, Salas-Villasenor AL, Ramos-Hernandez JC, Quevedo-Lopez MA. Enabling hybrid complementary-TFTs with inkjet printed TIPS-pentacene and chemical bath deposited CdS Ieee Transactions On Electron Devices. 61: 576-583. DOI: 10.1109/Ted.2013.2295164 |
0.357 |
|
| 2014 |
Hernandez-Como N, Moreno S, Mejia I, Quevedo-Lopez MA. Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/085008 |
0.303 |
|
| 2014 |
Salas-Villasenor AL, Mejia I, Sotelo-Lerma M, Guo ZB, Alshareef HN, Quevedo-Lopez MA. Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/085001 |
0.3 |
|
| 2014 |
Murphy JW, Smith L, Calkins J, Kunnen GR, Mejia I, Cantley KD, Chapman RA, Sastré-Hernández J, Mendoza-Pérez R, Contreras-Puente G, Allee DR, Quevedo-Lopez M, Gnade B. Thin film cadmium telluride charged particle sensors for large area neutron detectors Applied Physics Letters. 105. DOI: 10.1063/1.4895925 |
0.345 |
|
| 2014 |
Estrada M, Gutierrez-Heredia G, Cerdeira A, Alvarado J, Garduño I, Tinoco J, Mejia I, Quevedo-Lopez M. Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors Thin Solid Films. 573: 18-21. DOI: 10.1016/J.Tsf.2014.10.092 |
0.392 |
|
| 2014 |
Hernandez-Como N, Martinez-Landeros V, Mejia I, Aguirre-Tostado FS, Nascimento CD, De M. Azevedo G, Krug C, Quevedo-Lopez MA. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition Thin Solid Films. 550: 665-668. DOI: 10.1016/j.tsf.2013.10.168 |
0.322 |
|
| 2014 |
Alfaro Cruz MR, Hernandez-Como N, Mejia I, Ortega Zarzosa G, Martínez Castañón GA, Quevedo-Lopez MA. Electrical, optical and structural properties of ZnO nanorods thin films deposited over ZnO substrates Materials Letters. 133: 293-295. DOI: 10.1016/j.matlet.2014.07.014 |
0.34 |
|
| 2014 |
Lastra G, Luque PA, Quevedo-Lopez MA, Olivas A. Electrical properties of p-type ZnTe thin films by immersion in Cu solution Materials Letters. 126: 271-273. DOI: 10.1016/j.matlet.2014.04.058 |
0.328 |
|
| 2014 |
Lee S, Iyore OD, Park S, Lee YG, Jandhyala S, Kang CG, Mordi G, Kim Y, Quevedo-Lopez M, Gnade BE, Wallace RM, Lee BH, Kim J. Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate Carbon. 68: 791-797. DOI: 10.1016/J.Carbon.2013.11.071 |
0.354 |
|
| 2014 |
Lastra G, Quevedo-Lopez MA, Olivas A. Thin-film p-type ZnTe transistors by photolithography Chalcogenide Letters. 11: 67-70. |
0.326 |
|
| 2014 |
Luque PA, Salas Villaseñor A, Quevedo-Lopez MA, Olivas A. Effect of hydrazine on ZnS thin films over glass Chalcogenide Letters. 11: 105-109. |
0.337 |
|
| 2013 |
Avila-Vega YI, Leyva-Porras CC, Mireles M, Quevedo-López M, Macossay J, Bonilla-Cruz J. Nitroxide-Functionalized Graphene Oxide from Graphite Oxide. Carbon. 63. PMID 24347671 DOI: 10.1016/J.Carbon.2013.06.093 |
0.306 |
|
| 2013 |
Ramos JC, Kabir DL, Mejia I, Mireles M, Martine CA, Quevedo-Lopez MA. Inkjet printed thin film transistors using cadmium sulfide as active layer prepared by in-situ micro-reaction Ecs Solid State Letters. 2. DOI: 10.1149/2.004309ssl |
0.356 |
|
| 2013 |
Murphy JW, Eddy A, Kunnen GR, Mejia I, Cantley KD, Allee DR, Quevedo-Lopez MA, Gnade BE. Sol gel ZnO films doped with Mg and Li evaluated for charged particle detectors Proceedings of Spie - the International Society For Optical Engineering. 8730. DOI: 10.1117/12.2015856 |
0.351 |
|
| 2013 |
Mejia I, Salas-Villasenor AL, Cha D, Alshareef HN, Gnade BE, Quevedo-Lopez MA. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors Ieee Transactions On Electron Devices. 60: 327-332. DOI: 10.1109/Ted.2012.2228200 |
0.363 |
|
| 2013 |
Hemani GK, Vandenberghe WG, Brennan B, Chabal YJ, Walker AV, Wallace RM, Quevedo-Lopez M, Fischetti MV. Interfacial graphene growth in the Ni/SiO2 system using pulsed laser deposition Applied Physics Letters. 103. DOI: 10.1063/1.4821944 |
0.4 |
|
| 2013 |
Ramos JC, Mejia I, Martinez CA, Quevedo-Lopez MA. Direct on chip cadmium sulfide thin film transistors synthesized via modified chemical surface deposition Journal of Materials Chemistry C. 1: 6653-6660. DOI: 10.1039/c3tc31475h |
0.379 |
|
| 2013 |
Ai Y, Gowrisanker S, Jia H, Quevedo-Lopez M, Alshareef HN, Wallace RM, Gnade BE. Encapsulation of high frequency organic Schottky diodes Thin Solid Films. 531: 509-512. DOI: 10.1016/J.Tsf.2012.12.117 |
0.396 |
|
| 2013 |
Martinez-Landeros VH, Gutierrez-Heredia G, Aguirre-Tostado FS, Sotelo-Lerma M, Gnade BE, Quevedo-Lopez MA. Degradation of pentacene deposited on gold, aluminum and parylene surfaces: Impact of pentacene thickness Thin Solid Films. 531: 398-403. DOI: 10.1016/J.Tsf.2012.12.061 |
0.336 |
|
| 2013 |
Luque PA, Quevedo-Lopez MA, Olivas A. Influence of deposition time on ZnS thin film growth over SiO2 and glass substrates Materials Letters. 106: 49-51. DOI: 10.1016/j.matlet.2013.04.094 |
0.324 |
|
| 2013 |
Carrillo-Castillo A, Aguirre-Tostado FS, Salas-Villasenor A, Mejia I, Gnade BE, Sotelo-Lerma M, Quevedo-Lopez MA. Effect of chemical bath deposition parameters on the growth of pbs thin films for tfts applications Chalcogenide Letters. 10: 105-111. |
0.366 |
|
| 2013 |
Ramos JC, Kabir D, Mejia JI, Martinez CA, Quevedo-Lopez MA. Ink-jet printed CdS thin film transistors fabricated in-situ by micro-reaction Technical Proceedings of the 2013 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2013. 2: 265-268. |
0.368 |
|
| 2012 |
Murphy JW, Mejia I, Gnade BE, Quevedo-Lopez MA. Evaluation of CdS interfacial layers in ZnO nanowire/poly(3-hexylthiophene) solar cells Journal of Nanomaterials. 2012. DOI: 10.1155/2012/192456 |
0.321 |
|
| 2012 |
Salas-Villasenor AL, Mejia I, Sotelo-Lerma M, Gnade BE, Quevedo-Lopez MA. Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition Applied Physics Letters. 101. DOI: 10.1063/1.4773184 |
0.316 |
|
| 2012 |
Jung U, Lee YG, Kim JJ, Lee SK, Mejia I, Salas-Villasenor A, Quevedo-Lopez M, Lee BH. Indicators of mobility extraction error in bottom gate CdS metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4765067 |
0.35 |
|
| 2012 |
Perez MR, Mejia I, Salas-Villasenor AL, Stiegler H, Trachtenberg I, Gnade BE, Quevedo-Lopez MA. Hybrid CMOS thin-film devices based on solution-processed CdS n-TFTs and TIPS-Pentacene p-TFTs Organic Electronics: Physics, Materials, Applications. 13: 3045-3049. DOI: 10.1016/J.Orgel.2012.08.015 |
0.322 |
|
| 2011 |
Mejia I, Salas-Villasenor AL, Avendano-Bolivar A, Horvath J, Stiegler H, Gnade BE, Quevedo-Lopez MA. Low-temperature hybrid CMOS circuits based on chalcogenides and organic TFTs Ieee Electron Device Letters. 32: 1086-1088. DOI: 10.1109/Led.2011.2157801 |
0.324 |
|
| 2011 |
Mendivil-Reynoso T, Berman-Mendoza D, González LA, Castillo SJ, Apolinar-Iribe A, Gnade BE, Quevedo-Lopez M, Ramírez-Bon R. Fabrication and electrical characteristics of TFTs based on chemically deposited CdS films, using glycine as a complexing agent Semiconductor Science and Technology. 26: 115010. DOI: 10.1088/0268-1242/26/11/115010 |
0.455 |
|
| 2011 |
Fuentes-Fernandez E, Baldenegro-Perez L, Quevedo-Lopez M, Gnade B, Hande A, Shah P, Alshareef HN. Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers Solid-State Electronics. 63: 89-93. DOI: 10.1016/J.Sse.2011.05.027 |
0.349 |
|
| 2011 |
Fuentes-Fernandez E, Debray-Mechtaly W, Quevedo-Lopez MA, Gnade B, Rajasekaran A, Hande A, Shah P, Alshareef HN. Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks Journal of Electronic Materials. 40: 85-91. DOI: 10.1007/S11664-010-1407-X |
0.338 |
|
| 2010 |
Morales-Acosta MD, Quevedo-Lopez MA, Alshareef HN, Gnade B, Ramirez-Bon R. Dielectric properties of PMMA-SiO2 hybrid films Materials Science Forum. 644: 25-28. DOI: 10.4028/Www.Scientific.Net/Msf.644.25 |
0.34 |
|
| 2010 |
Salas-Villasenor AL, Mejia I, Hovarth J, Alshareef HN, Cha DK, Ramirez-Bon R, Gnade BE, Quevedo-Lopez MA. Impact of gate dielectric in carrier mobility in low temperature chalcogenide thin film transistors for flexible electronics Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3456551 |
0.406 |
|
| 2010 |
Gutiérrez-Heredia G, González LA, Alshareef HN, Gnade BE, Quevedo-López M. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115001 |
0.37 |
|
| 2010 |
Mao D, Quevedo-Lopez MA, Stiegler H, Gnade BE, Alshareef HN. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics Organic Electronics: Physics, Materials, Applications. 11: 925-932. DOI: 10.1016/J.Orgel.2010.02.012 |
0.331 |
|
| 2009 |
Gowrisanker S, Ai Y, Jia H, Quevedo-Lopez MA, Alshareef HN, Trachtenberg I, Stiegler H, Edwards H, Barnett R, Gnade BE. Organic thin-film transistors with low threshold voltage variation on low-temperature substrates Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3046068 |
0.306 |
|
| 2008 |
Devine RAB, Hjalmarson HP, Alshareef HN, Quevedo-Lopez M. Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices Applied Physics Letters. 92. DOI: 10.1063/1.2912025 |
0.322 |
|
| 2008 |
Gowrisanker S, Ai Y, Quevedo-Lopez MA, Jia H, Alshareef HN, Vogel E, Gnade B. Impact of semiconductor/contact metal thickness ratio on organic thin-film transistor performance Applied Physics Letters. 92. DOI: 10.1063/1.2904968 |
0.331 |
|
| 2007 |
Mazón-Montijo DA, Sotelo-Lerma M, Quevedo-López M, El-Bouanani M, Alshareef HN, Espinoza-Beltrán FJ, Ramírez-Bon R. Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process Applied Surface Science. 254: 499-505. DOI: 10.1016/J.Apsusc.2007.06.041 |
0.409 |
|
| 2006 |
Hussain MM, Quevedo-Lopez MA, Alshareef HN, Larison D, Mathur K, Gnade BE. Deposition method-induced stress effect on ultrathin titanium nitride etch characteristics Electrochemical and Solid-State Letters. 9: 361-363. DOI: 10.1149/1.2359100 |
0.327 |
|
| 2006 |
Krishnan SA, Quevedo-Lopez M, Li HJ, Kirsch P, Choi R, Young C, Peterson JJ, Lee BH, Bersuker G, Lee JC. Impact of nitrogen on PBTI characteristics of HfSiON/TiN gate stacks Ieee International Reliability Physics Symposium Proceedings. 325-328. DOI: 10.1109/RELPHY.2006.251237 |
0.333 |
|
| 2006 |
Hussain MM, Quevedo-Lopez MA, Alshareef HN, Wen HC, Larison D, Gnade B, El-Bouanani M. Thermal annealing effects on a representative high-k/metal film stack Semiconductor Science and Technology. 21: 1437-1440. DOI: 10.1088/0268-1242/21/10/012 |
0.345 |
|
| 2006 |
Alshareef HN, Quevedo-Lopez M, Wen HC, Harris R, Kirsch P, Majhi P, Lee BH, Jammy R, Lichtenwalner DJ, Jur JS, Kingon AI. Work function engineering using lanthanum oxide interfacial layers Applied Physics Letters. 89. DOI: 10.1063/1.2396918 |
0.357 |
|
| 2006 |
Pant G, Gnade A, Kim MJ, Wallace RM, Gnade BE, Quevedo-Lopez MA, Kirsch PD, Krishnan S. Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2226991 |
0.321 |
|
| 2006 |
Alshareef HN, Luan HF, Choi K, Harris HR, Wen HC, Quevedo-Lopez MA, Majhi P, Lee BH. Metal gate work function engineering using AlN x interfacial layers Applied Physics Letters. 88. DOI: 10.1063/1.2186517 |
0.34 |
|
| 2006 |
Pant G, Gnade A, Kim MJ, Wallace RM, Gnade BE, Quevedo-Lopez MA, Kirsch PD. Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2165182 |
0.314 |
|
| 2006 |
Kirsch PD, Quevedo-Lopez MA, Li HJ, Senzaki Y, Peterson JJ, Song SC, Krishnan SA, Moumen N, Barnett J, Bersuker G, Hung PY, Lee BH, Lafford T, Wang Q, Gay D, et al. Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility Journal of Applied Physics. 99. DOI: 10.1063/1.2161819 |
0.316 |
|
| 2006 |
Bennett J, Quevedo-Lopez M, Satyanarayana S. Characterizing high-k and low-k dielectric materials for semiconductors: Progress and challenges Applied Surface Science. 252: 7167-7171. DOI: 10.1016/J.Apsusc.2006.02.087 |
0.403 |
|
| 2005 |
Quevedo-Lopez MA, Krishnan SA, Kirsch PD, Pant G, Gnade BE, Wallace RM. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2150586 |
0.304 |
|
| 2005 |
Quevedo-Lopez MA, Chambers JJ, Visokay MR, Shanware A, Colombo L. Thermal stability of hafnium-silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy Applied Physics Letters. 87. DOI: 10.1063/1.1977184 |
0.31 |
|
| 2005 |
Quevedo-Lopez MA, Krishnan SA, Kirsch PD, Li HJ, Sim JH, Huffman C, Peterson JJ, Lee BH, Pant G, Gnade BE, Kim MJ, Wallace RM, Guo D, Bu H, Ma TP. High performance gate first HfSiON dielectric satisfying 45nm node requirements Technical Digest - International Electron Devices Meeting, Iedm. 2005: 425-428. |
0.309 |
|
| 2005 |
Kirsch PD, Peterson J, Gutt J, Gopalan S, Krishnan S, Li HJ, Quevedo-Lopez M, Akbar M, Barnett J, Moumen N, Sim JH, Song SC, Lysaght P, Huffman C, Majhi P, et al. High-k dielectric process development for enhanced electron mobility in high performance field effect transistors Proceedings - Electrochemical Society. 84-93. |
0.322 |
|
| 2004 |
Punchaipetch P, Pant G, Quevedo-Lopez MA, Yao C, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Low-temperature deposition of hafnium silicate gate dielectrics Ieee Journal On Selected Topics in Quantum Electronics. 10: 89-100. DOI: 10.1109/Jstqe.2004.824109 |
0.391 |
|
| 2004 |
Miotti L, Bastos KP, Soares GV, Driemeier C, Pezzi RP, Morais J, Baumvol IJR, Rotondaro ALP, Visokay MR, Chambers JJ, Quevedo-Lopez M, Colombo L. Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling Applied Physics Letters. 85: 4460-4462. DOI: 10.1063/1.1812814 |
0.325 |
|
| 2003 |
Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, LiFatou A, Chambers JJ, Colombo L. Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films Applied Physics Letters. 82: 4669-4671. DOI: 10.1063/1.1586483 |
0.307 |
|
| 2003 |
Kim MJ, Huang J, Cha DK, Quevedo-Lopez MA, Wallace RM, Gnade BE. Thermal stability of Hf-based high-κ dielectric films on Si(100) Microscopy and Microanalysis. 9: 506-507. DOI: 10.1017/S1431927603442530 |
0.389 |
|
| 2003 |
Punchaipetch P, Pant G, Quevedo-Lopez M, Zhang H, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide Thin Solid Films. 425: 68-71. DOI: 10.1016/S0040-6090(02)01306-8 |
0.419 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Gnade BE, Colombo L, Bevan M, Douglas M, Visokay M, Wallace RM. Interfacial diffusion studies of Hf and Zr into Si from thermally annealed Hf and Zr silicates Materials Research Society Symposium - Proceedings. 686: 223-228. DOI: 10.1557/Proc-686-A9.5 |
0.35 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Wallace RM, Gnade BE. Wet chemical etching studies of Zr and Hf-silicate gate dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1891-1897. DOI: 10.1116/1.1507343 |
0.332 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM, Visokay MR, Li-Fatou A, Bevan MJ, Colombo L. Phosphorus and arsenic penetration studies through HfSixO y and HfSixOyNz films Applied Physics Letters. 81: 1609-1611. DOI: 10.1063/1.1502910 |
0.308 |
|
| 2002 |
Quevedo-Lopez MA, El-Bouanani M, Gnade BE, Wallace RM, Visokay MR, Douglas M, Bevan MJ, Colombo L. Interdiffusion studies for HfSi xO y and ZrSi xO y on Si Journal of Applied Physics. 92: 3540-3550. DOI: 10.1063/1.1501752 |
0.365 |
|
| 2001 |
Quevedo-Lopez M, El-Bouanani M, Addepalli S, Duggan JL, Gnade BE, Wallace RM, Visokay MR, Douglas M, Colombo L. Hafnium interdiffusion studies from hafnium silicate into silicon Applied Physics Letters. 79: 4192-4194. DOI: 10.1063/1.1425466 |
0.391 |
|
| 2001 |
Quevedo-Lopez M, El-Bouanani M, Addepalli S, Duggan JL, Gnade BE, Wallace RM, Visokay MR, Douglas M, Bevan MJ, Colombo L. Thermally induced Zr incorporation into Si from zirconium silicate thin films Applied Physics Letters. 79: 2958-2960. DOI: 10.1063/1.1415418 |
0.423 |
|
| 2000 |
Quevedo-Lopez MA, Reidy RF, Orozco-Teran RA, Mendoza-Gonzalez O, Ramirez-Bon R. Enhancement of the photochromic and thermochromic properties of molybdenum oxide thin films by a cadmium sulfide underlayer Journal of Materials Science: Materials in Electronics. 11: 151-155. DOI: 10.1023/A:1008933632515 |
0.348 |
|
| 2000 |
Quevedo-Lopez MA, Mendoza-Gonzalez O, Reidy RF, Ramirez-Bon R, Orozco-Teran RA. Effect of energetic treatments on the structure and resistivity of evaporated MoO3 films on cadmium sulfide substrates Journal of Physics and Chemistry of Solids. 61: 727-734. DOI: 10.1016/S0022-3697(99)00343-1 |
0.341 |
|
| 1999 |
Quevedo-Lopez MA, Ramirez-Bon R, Orozco-Teran RA, Mendoza-Gonzalez O, Zelaya-Angel O. Effect of a CdS interlayer in thermochromism and photochromism of MoO3 thin films Thin Solid Films. 343: 202-205. |
0.337 |
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